Custom DNN using Reward Modulated Inverted STDP Learning for Temporal Pattern Recognition
Authors:
Vijay Shankaran Vivekanand,
Rajkumar Kubendran
Abstract:
Temporal spike recognition plays a crucial role in various domains, including anomaly detection, keyword spotting and neuroscience. This paper presents a novel algorithm for efficient temporal spike pattern recognition on sparse event series data. The algorithm leverages a combination of reward-modulatory behavior, Hebbian and anti-Hebbian based learning methods to identify patterns in dynamic dat…
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Temporal spike recognition plays a crucial role in various domains, including anomaly detection, keyword spotting and neuroscience. This paper presents a novel algorithm for efficient temporal spike pattern recognition on sparse event series data. The algorithm leverages a combination of reward-modulatory behavior, Hebbian and anti-Hebbian based learning methods to identify patterns in dynamic datasets with short intervals of training. The algorithm begins with a preprocessing step, where the input data is rationalized and translated to a feature-rich yet sparse spike time series data. Next, a linear feed forward spiking neural network processes this data to identify a trained pattern. Finally, the next layer performs a weighted check to ensure the correct pattern has been detected.To evaluate the performance of the proposed algorithm, it was trained on a complex dataset containing spoken digits with spike information and its output compared to state-of-the-art.
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Submitted 15 July, 2023;
originally announced July 2023.
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
Authors:
B. L. Ji,
H. Li,
Q. Ye,
S. Gausepohl,
S. Deora,
D. Veksler,
S. Vivekanand,
H. Chong,
H. Stamper,
T. Burroughs,
C. Johnson,
M. Smalley,
S. Bennett,
V. Kaushik,
J. Piccirillo,
M. Rodgers,
M. Passaro,
M. Liehr
Abstract:
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is dev…
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Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.
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Submitted 31 August, 2015;
originally announced September 2015.
