Showing 1–3 of 3 results for author: Vass-Várnai, A

Package Hermeticity Testing with Thermal Transient Measurements

Authors: Andras Vass-Varnai, M. Rencz

Abstract: The rapid incursion of new technologies such as MEMS and smart sensor device manufacturing requires new tailor-made packaging designs. In many applications these devices are exposed to humid environments. Since the penetration of moisture into the package may result in internal corrosion or shift of the operating parameters, the reliability testing of hermetically sealed packages has become a cr… ▽ More The rapid incursion of new technologies such as MEMS and smart sensor device manufacturing requires new tailor-made packaging designs. In many applications these devices are exposed to humid environments. Since the penetration of moisture into the package may result in internal corrosion or shift of the operating parameters, the reliability testing of hermetically sealed packages has become a crucial question in the semiconductor industry. △ Less

Submitted 7 May, 2008; originally announced May 2008.

Comments: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838)

Journal ref: Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2008, Nice : France (2008)

Porous Alumina Based Capacitive MEMS RH Sensor

Authors: L. Juhasz, A. Vass-Varnai, Veronika Timar-Horvath, Marc Desmulliez, Resh Dhariwal

Abstract: The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which w… ▽ More The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were used to characterize the thin film porous alumina sensing layer. The average sensitivity is approx. 15 pF/RH% which is more than a magnitude higher than the values found in the literature. The sensor is equipped with integrated resistive heating, which can be used for maintenance to reduce drift, or for keeping the sensing layer at elevated temperature, as an alternative method for temperature-dependence cancellation. △ Less

Submitted 7 May, 2008; originally announced May 2008.

Comments: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838)

Journal ref: Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2008, Nice : France (2008)

Usage of Porous Al2O3 Layers for RH Sensing

Authors: Veronika Timár-Horváth, László Juhász, András Vass-Várnai, Gergely Perlaky

Abstract: At the Department of Electron Devices a cheap, more or less CMOS process compatible capacitive type RH sensor has been developed. Capacitive sensors are based on dielectric property changes of thin films upon water vapour uptake which depends on the surrounding media's relative humidity content. Because of the immense surface-to-volume ratio and the abundant void fraction, very high sensitivitie… ▽ More At the Department of Electron Devices a cheap, more or less CMOS process compatible capacitive type RH sensor has been developed. Capacitive sensors are based on dielectric property changes of thin films upon water vapour uptake which depends on the surrounding media's relative humidity content. Because of the immense surface-to-volume ratio and the abundant void fraction, very high sensitivities can be obtained with porous ceramics. One of the ceramics to be used is porous Al2O3, obtained by electrochemical oxidation of aluminium under anodic bias. The average pore sizes are between 6...9 nm. In our paper we intend to demonstrate images representing the influence of the technological parameters on the porous structure and the device sensitivity. △ Less

Submitted 21 February, 2008; originally announced February 2008.

Comments: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)

Journal ref: Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)