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OPTIMA: Design-Space Exploration of Discharge-Based In-SRAM Computing: Quantifying Energy-Accuracy Trade-Offs
Authors:
Saeed Seyedfaraji,
Severin Jager,
Salar Shakibhamedan,
Asad Aftab,
Semeen Rehman
Abstract:
In-SRAM computing promises energy efficiency, but circuit nonlinearities and PVT variations pose major challenges in designing robust accelerators. To address this, we introduce OPTIMA, a modeling framework that aids in analyzing bit-line discharge and power consumption in 6T-SRAM-based accelerators. It provides insights into limiting factors and enables fast design-space exploration of circuit co…
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In-SRAM computing promises energy efficiency, but circuit nonlinearities and PVT variations pose major challenges in designing robust accelerators. To address this, we introduce OPTIMA, a modeling framework that aids in analyzing bit-line discharge and power consumption in 6T-SRAM-based accelerators. It provides insights into limiting factors and enables fast design-space exploration of circuit configurations. Leveraging OPTIMA for in-SRAM multiplications exhibits ~100x simulation speed-up while maintaining an RMS modeling error of 0.88mV. Exploration yields an optimized multiplier with 1.05pJ energy consumption per 4-bit operation and classification accuracies of 71.8% (top-1) and 90.4% (top-5) for ImageNet and 92.5% for CIFAR-10 datasets respectively when applied in quantized DNNs. To further support research and development, we made our tool flow available open source at https://github.com/sevjaeg/optima.
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Submitted 11 November, 2024;
originally announced November 2024.
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HOPE: Holistic STT-RAM Architecture Exploration Framework for Future Cross-Platform Analysis
Authors:
Saeed SeyedFaraji,
Markus Bichl,
Asad Aftab,
Semeen Rehman
Abstract:
Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be evaluated before deployment under real workloads and architecture. But there is a lack of available open-source STT-RAM-based system evaluation framework, which hampe…
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Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be evaluated before deployment under real workloads and architecture. But there is a lack of available open-source STT-RAM-based system evaluation framework, which hampers research and experimentation and impacts the adoption of STT- RAM in a system. This paper proposes a novel, extendable STT-RAM memory controller design integrated inside the gem5 simulator. Our framework enables understanding various aspects of STT-RAM, i.e., power, delay, clock cycles, energy, and system throughput. We will open-source our HOPE framework, which will fuel research and aid in accelerating the development of future system architectures based on STT-RAM. It will also facilitate the user for further tool enhancement.
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Submitted 26 January, 2024;
originally announced January 2024.
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SMART: Investigating the Impact of Threshold Voltage Suppression in an In-SRAM Multiplication/Accumulation Accelerator for Accuracy Improvement in 65 nm CMOS Technology
Authors:
Saeed Seyedfaraji,
Baset Mesgari,
Semeen Rehman
Abstract:
State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is based on the analog behavior of the data stored inside the memory cell. These approaches proposed various system architectures for that. In this paper, we inve…
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State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is based on the analog behavior of the data stored inside the memory cell. These approaches proposed various system architectures for that. In this paper, we investigated the effect of threshold voltage suppression on the access transistors of the In-SRAM multiplication and accumulation (MAC) accelerator to improve and enhance the performance of bit line (bit line bar) discharge rate that will increase the accuracy of MAC operation. We provide a comprehensive analytical analysis followed by circuit implementation, including a Monte-Carlo simulation by a 65nm CMOS technology. We confirmed the efficiency of our method (SMART) for a four-by-four-bit MAC operation. The proposed technique improves the accuracy while consuming 0.683 pJ per computation from a power supply of 1V. Our novel technique presents less than 0.009 standard deviations for the worst-case incorrect output scenario.
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Submitted 2 August, 2022;
originally announced September 2022.
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EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit
Authors:
Saeed Seyedfaraji,
Javad Talafy Daryani,
Mohamed M. Sabry Aly,
Semeen Rehman
Abstract:
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in industrial adaptation is the high write energy and latency. In this paper, we overcome this challenge…
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Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in industrial adaptation is the high write energy and latency. In this paper, we overcome this challenge by exploiting the stochastic switching activity of STT-RAM cells and, in tandem, with circuit-level approximation. We enforce the robustness of our technique by analyzing the vulnerability of write operation against radiation-induced soft errors and applying a low-cost improvement. Due to serious reliability challenges in nanometer-scale technology, the robustness of the proposed circuit is also analyzed in the presence of CMOS and magnetic tunnel junction (MTJ) process variation. Compared to the state-of-the-art, we achieved 33.04% and 5.47% lower STT-RAM write energy and latency, respectively, with a 3.7% area overhead, for memory-centric applications.
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Submitted 16 August, 2022;
originally announced August 2022.
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AID: Accuracy Improvement of Analog Discharge-Based in-SRAM Multiplication Accelerator
Authors:
Saeed Seyedfaraji,
Baset Mesgari,
Semeen Rehman
Abstract:
This paper presents a novel circuit (AID) to improve the accuracy of an energy-efficient in-memory multiplier using a standard 6T-SRAM. The state-of-the-art discharge-based in-SRAM multiplication accelerators suffer from a non-linear behavior in their bit-line (BL, BLB) due to the quadratic nature of the access transistor that leads to a poor signal-to-noise ratio (SNR). In order to achieve linear…
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This paper presents a novel circuit (AID) to improve the accuracy of an energy-efficient in-memory multiplier using a standard 6T-SRAM. The state-of-the-art discharge-based in-SRAM multiplication accelerators suffer from a non-linear behavior in their bit-line (BL, BLB) due to the quadratic nature of the access transistor that leads to a poor signal-to-noise ratio (SNR). In order to achieve linearity in the BLB voltage, we propose a novel root function technique on the access transistor's gate that results in accuracy improvement of on average 10.77 dB SNR compared to state-of-the-art discharge-based topologies. Our analytical methods and a circuit simulation in a 65 nm CMOS technology verify that the proposed technique consumes 0.523 pJ per computation (multiplication, accumulation, and preset) from a power supply of 1V, which is 51.18% lower compared to other state-of-the-art techniques. We have performed an extensive Monte Carlo based simulation for a 4x4 multiplication operation, and our novel technique presents less than 0.086 standard deviations for the worst-case incorrect output scenario.
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Submitted 15 April, 2022;
originally announced April 2022.
