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DynaMITe: Dynamic Query Bootstrapping for Multi-object Interactive Segmentation Transformer
Authors:
Amit Kumar Rana,
Sabarinath Mahadevan,
Alexander Hermans,
Bastian Leibe
Abstract:
Most state-of-the-art instance segmentation methods rely on large amounts of pixel-precise ground-truth annotations for training, which are expensive to create. Interactive segmentation networks help generate such annotations based on an image and the corresponding user interactions such as clicks. Existing methods for this task can only process a single instance at a time and each user interactio…
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Most state-of-the-art instance segmentation methods rely on large amounts of pixel-precise ground-truth annotations for training, which are expensive to create. Interactive segmentation networks help generate such annotations based on an image and the corresponding user interactions such as clicks. Existing methods for this task can only process a single instance at a time and each user interaction requires a full forward pass through the entire deep network. We introduce a more efficient approach, called DynaMITe, in which we represent user interactions as spatio-temporal queries to a Transformer decoder with a potential to segment multiple object instances in a single iteration. Our architecture also alleviates any need to re-compute image features during refinement, and requires fewer interactions for segmenting multiple instances in a single image when compared to other methods. DynaMITe achieves state-of-the-art results on multiple existing interactive segmentation benchmarks, and also on the new multi-instance benchmark that we propose in this paper.
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Submitted 22 August, 2023; v1 submitted 13 April, 2023;
originally announced April 2023.
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A floating point division unit based on Taylor-Series expansion algorithm and Iterative Logarithmic Multiplier
Authors:
Riyansh K. Karani,
Akash K. Rana,
Dhruv H. Reshamwala,
Kishore Saldanha
Abstract:
Floating point division, even though being an infrequent operation in the traditional sense, is indis- pensable when it comes to a range of non-traditional applications such as K-Means Clustering and QR Decomposition just to name a few. In such applications, hardware support for floating point division would boost the performance of the entire system. In this paper, we present a novel architecture…
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Floating point division, even though being an infrequent operation in the traditional sense, is indis- pensable when it comes to a range of non-traditional applications such as K-Means Clustering and QR Decomposition just to name a few. In such applications, hardware support for floating point division would boost the performance of the entire system. In this paper, we present a novel architecture for a floating point division unit based on the Taylor-series expansion algorithm. We show that the Iterative Logarithmic Multiplier is very well suited to be used as a part of this architecture. We propose an implementation of the powering unit that can calculate an odd power and an even power of a number simultaneously, meanwhile having little hardware overhead when compared to the Iterative Logarithmic Multiplier.
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Submitted 29 April, 2017;
originally announced May 2017.
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Performance evaluation of FD-SOI Mosfets for different metal gate work function
Authors:
Deepesh Ranka,
Ashwani K. Rana,
Rakesh Kumar Yadav,
Kamalesh Yadav,
Devendra Giri
Abstract:
Fully depleted (FD) Silicon on Insulator (SOI) metal oxide Field Effect Transistor (MOSFET) Is the Leading Contender for Sun 65nm Regime. This paper presents a study of effects of work functions of metal gate on the performance of FD-SOI MOSFET. Sentaurus TCAD simulation tool is used to investigate the effect of work function of gates ont he performance FDSOI MOSFET. Specific channel length of the…
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Fully depleted (FD) Silicon on Insulator (SOI) metal oxide Field Effect Transistor (MOSFET) Is the Leading Contender for Sun 65nm Regime. This paper presents a study of effects of work functions of metal gate on the performance of FD-SOI MOSFET. Sentaurus TCAD simulation tool is used to investigate the effect of work function of gates ont he performance FDSOI MOSFET. Specific channel length of the device that had been concentrated is 25nm. From simulation we observed that by changing the work function of the metal gates of FD-SOI MOSFET we can change the threshold voltage. Hence by using this technique we can set the appropriate threshold voltage of FD-SOI MOSFET at same voltage and we can decrease the leakage current, gate tunneling current and short channel effects and increase drive current.
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Submitted 4 April, 2011;
originally announced April 2011.
