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Hardware Implementation of Ring Oscillator Networks Coupled by BEOL Integrated ReRAM for Associative Memory Tasks
Authors:
Wooseok Choi,
Thomas van Bodegraven,
Jelle Verest,
Olivier Maher,
Donato Francesco Falcone,
Antonio La Porta,
Daniel Jubin,
Bert Jan Offrein,
Siegfried Karg,
Valeria Bragaglia,
Aida Todri-Sanial
Abstract:
We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integrated into the Back End of Line (BEOL) of CMOS technology, is leveraged to establish dense coupling elements between oscillator neurons, allowing phase-encoded analog information to be processed in-memory. We also realiz…
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We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integrated into the Back End of Line (BEOL) of CMOS technology, is leveraged to establish dense coupling elements between oscillator neurons, allowing phase-encoded analog information to be processed in-memory. We also realize an ONN architecture design with the coupling ReRAM array. To validate the architecture experimentally, we present a conductive metal oxide (CMO)/HfOx ReRAM array chip integrated with a 2-by-2 ring oscillator-based network. The system successfully retrieves patterns through correct binary phase locking. This proof of concept underscores the potential of ReRAM technology for large-scale, integrated ONNs.
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Submitted 18 March, 2025;
originally announced March 2025.
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All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices
Authors:
Donato Francesco Falcone,
Victoria Clerico,
Wooseok Choi,
Tommaso Stecconi,
Folkert Horst,
Laura Begon-Lours,
Matteo Galetta,
Antonio La Porta,
Nikhil Garg,
Fabien Alibart,
Bert Jan Offrein,
Valeria Bragaglia
Abstract:
Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or training acceleration. However, a unified analog in-memory technology platform-capable of on-chip training, weight retention, and long-term inference acceleration-has yet to be reported. This work presents an all-in-one analog…
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Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or training acceleration. However, a unified analog in-memory technology platform-capable of on-chip training, weight retention, and long-term inference acceleration-has yet to be reported. This work presents an all-in-one analog AI accelerator, combining these capabilities to enable energy-efficient, continuously adaptable AI systems. The platform leverages an array of analog filamentary conductive-metal-oxide (CMO)/HfOx resistive switching memory cells (ReRAM) integrated into the back-end-of-line (BEOL). The array demonstrates reliable resistive switching with voltage amplitudes below 1.5V, compatible with advanced technology nodes. The array multi-bit capability (over 32 stable states) and low programming noise (down to 10nS) enable a nearly ideal weight transfer process, more than an order of magnitude better than other memristive technologies. Inference performance is validated through matrix-vector multiplication simulations on a 64x64 array, achieving a root-mean-square error improvement by a factor of 20 at 1 second and 3 at 10 years after programming, compared to state-of-the-art. Training accuracy closely matching the software equivalent is achieved across different datasets. The CMO/HfOx ReRAM technology lays the foundation for efficient analog systems accelerating both inference and training in deep neural networks.
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Submitted 19 June, 2025; v1 submitted 6 February, 2025;
originally announced February 2025.
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Roadmap on Neuromorphic Photonics
Authors:
Daniel Brunner,
Bhavin J. Shastri,
Mohammed A. Al Qadasi,
H. Ballani,
Sylvain Barbay,
Stefano Biasi,
Peter Bienstman,
Simon Bilodeau,
Wim Bogaerts,
Fabian Böhm,
G. Brennan,
Sonia Buckley,
Xinlun Cai,
Marcello Calvanese Strinati,
B. Canakci,
Benoit Charbonnier,
Mario Chemnitz,
Yitong Chen,
Stanley Cheung,
Jeff Chiles,
Suyeon Choi,
Demetrios N. Christodoulides,
Lukas Chrostowski,
J. Chu,
J. H. Clegg
, et al. (125 additional authors not shown)
Abstract:
This roadmap consolidates recent advances while exploring emerging applications, reflecting the remarkable diversity of hardware platforms, neuromorphic concepts, and implementation philosophies reported in the field. It emphasizes the critical role of cross-disciplinary collaboration in this rapidly evolving field.
This roadmap consolidates recent advances while exploring emerging applications, reflecting the remarkable diversity of hardware platforms, neuromorphic concepts, and implementation philosophies reported in the field. It emphasizes the critical role of cross-disciplinary collaboration in this rapidly evolving field.
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Submitted 16 January, 2025; v1 submitted 14 January, 2025;
originally announced January 2025.
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High-Conductance, Ohmic-like HfZrO$_4$ Ferroelectric Memristor
Authors:
Laura Bégon-Lours,
Mattia Halter,
Youri Popoff,
Zhenming Yu,
Donato Francesco Falcone,
Bert Jan Offrein
Abstract:
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record current density of 0.01 A/cm$^2$ (at a read voltage of 80 mV) as well as ideal memristive behavior (linear current-voltage relation and analog resistive switchi…
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The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record current density of 0.01 A/cm$^2$ (at a read voltage of 80 mV) as well as ideal memristive behavior (linear current-voltage relation and analog resistive switching), devices based on an ultra-thin (2.7 nm thick), polycrystalline HfZrO$_4$ ferroelectric layer are fabricated by Atomic Layer Deposition. The use of a semiconducting oxide interlayer (WO$_{x<3}$) at one of the interfaces, induces an asymmetric energy profile upon ferroelectric polarization reversal and thus the long-term potentiation / depression (conductance increase / decrease) of interest. Moreover, it favors the stable retention of both the low and the high resistive states. Thanks to the low operating voltage (<3.5 V), programming requires less than 10${^-12}$ J for 20 ns long pulses. Remarkably, the memristors show no wake-up or fatigue effect.
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Submitted 21 September, 2023;
originally announced September 2023.
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A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
Authors:
Laura Bégon-Lours,
Mattia Halter,
Diana Dávila Pineda,
Youri Popoff,
Valeria Bragaglia,
Antonio La Porta,
Daniel Jubin,
Jean Fompeyrine,
Bert Jan Offrein
Abstract:
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cy…
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A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.
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Submitted 21 September, 2023;
originally announced September 2023.
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A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory
Authors:
Laura Bégon-Lours,
Mattia Halter,
Diana Dávila Pineda,
Valeria Bragaglia,
Youri Popoff,
Antonio La Porta,
Daniel Jubin,
Jean Fompeyrine,
Bert Jan Offrein
Abstract:
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and dev…
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A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.
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Submitted 21 September, 2023;
originally announced September 2023.
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A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights
Authors:
Mattia Halter,
Laura Bégon-Lours,
Valeria Bragaglia,
Marilyne Sousa,
Bert Jan Offrein,
Stefan Abel,
Mathieu Luisier,
Jean Fompeyriney
Abstract:
Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing units as in standard von Neuman architectures for data-critical applications including machine learning. The essential building blocks of neuromorphic systems are…
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Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing units as in standard von Neuman architectures for data-critical applications including machine learning. The essential building blocks of neuromorphic systems are non-volatile synaptic elements such as memristors. Key memristor properties include a suitable non-volatile resistance range, continuous linear resistance modulation and symmetric switching. In this work, we demonstrate voltage-controlled, symmetric and analog potentiation and depression of a ferroelectric Hf$_{57}$Zr$_{43}$O$_{2}$ (HZO) field effect transistor (FeFET) with good linearity. Our FeFET operates with a low writing energy (fJ) and fast programming time (40 ns). Retention measurements have been done over 4-bits depth with low noise (1%) in the tungsten oxide (WO$_{x}$) read out channel. By adjusting the channel thickness from 15nm to 8nm, the on/off ratio of the FeFET can be engineered from 1% to 200% with an on-resistance ideally >100 kOhm, depending on the channel geometry. The device concept is using earth-abundant materials, and is compatible with a back end of line (BEOL) integration into complementary metal-oxidesemiconductor (CMOS) processes. It has therefore a great potential for the fabrication of high density, large-scale integrated arrays of artificial analog synapses.
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Submitted 17 January, 2020;
originally announced January 2020.
