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Showing 1–2 of 2 results for author: Koryazhkina, M

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  1. arXiv:2412.07340  [pdf

    q-bio.NC cs.ET physics.app-ph

    Investigation of in vitro neuronal activity processing using a CMOS-integrated ZrO2-based memristive crossbar

    Authors: Maria N. Koryazhkina, Albina V. Lebedeva, Darina D. Pakhomova, Ivan N. Antonov, Vyacheslav V. Razin, Elena D. Budylina, Alexey I. Belov, Alexey N. Mikhaylov, Anton A. Konakov

    Abstract: The influence of the epileptiform neuronal activity on the response of a CMOS-integrated ZrO2-based memristive crossbar and its conductivity was studied. Epileptiform neuronal activity was obtained in vitro in the hippocampus slices of laboratory mice using 4-aminopyridine experimental model. Synaptic plasticity of the memristive crossbar induced by epileptiform neuronal activity pulses was detect… ▽ More

    Submitted 10 December, 2024; originally announced December 2024.

  2. arXiv:1711.01041  [pdf

    cs.ET physics.app-ph

    Towards Hardware Implementation of Double-Layer Perceptron Based on Metal-Oxide Memristive Nanostructures

    Authors: A. N. Mikhaylov, O. A. Morozov, P. E. Ovchinnikov, I. N. Antonov, A. I. Belov, D. S. Korolev, M. N. Koryazhkina, A. N. Sharapov, E. G. Gryaznov, O. N. Gorshkov, V. B. Kazantsev

    Abstract: Construction and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of neural network is implemented as a double-layer perceptron with a weight matrix composed of 32 memristive devices. The network training algorithm takes into ac… ▽ More

    Submitted 3 November, 2017; originally announced November 2017.