Showing 1–5 of 5 results for author: Kersting, B

Potential of WebAssembly for Embedded Systems

Authors: Stefan Wallentowitz, Bastian Kersting, Dan Mihai Dumitriu

Abstract: Application virtual machines provide strong isolation properties and are established in the context of software portability. Those opportunities make them interesting for scalable and secure IoT deployments. WebAssembly is an application virtual machine with origins in web browsers, that is getting rapidly adopted in other domains. The strong and steadily growing ecosystem makes WebAssembly an int… ▽ More Application virtual machines provide strong isolation properties and are established in the context of software portability. Those opportunities make them interesting for scalable and secure IoT deployments. WebAssembly is an application virtual machine with origins in web browsers, that is getting rapidly adopted in other domains. The strong and steadily growing ecosystem makes WebAssembly an interesting candidate for Embedded Systems. This position paper discusses the usage of WebAssembly in Embedded Systems. After introducing the basic concepts of WebAssembly and existing runtime environments, we give an overview of the challenges for the efficient usage of WebAssembly in Embedded Systems. The paper concludes with a real world case study that demonstrates the viability, before giving an outlook on open issues and upcoming work. △ Less

Submitted 15 May, 2024; originally announced May 2024.

Quest for a solution to drift in phase change memory devices

Authors: Benedikt Kersting

Abstract: The goal of this thesis is to gain new insights into the drift phenomenon and identify strategies to mitigate it. An extensive experimental characterization of PCM devices and in particular drift forms the foundation of each chapter. With respect to time-scales, ambient temperature, device dimensions, and combinations thereof, drift is studied under unprecedented conditions. In three studies, diff… ▽ More The goal of this thesis is to gain new insights into the drift phenomenon and identify strategies to mitigate it. An extensive experimental characterization of PCM devices and in particular drift forms the foundation of each chapter. With respect to time-scales, ambient temperature, device dimensions, and combinations thereof, drift is studied under unprecedented conditions. In three studies, different aspects of drift are examined. (1) The origin of structural relaxation: Drift measurements over 9 orders of magnitude in time reveal the onset of relaxation in a melt-quenched state. The data is used to appraise two models, the Gibbs relaxation model and the collective relaxation model. Additionally, a refined version of the collective relaxation model is introduced and the consequences of a limited number of structural defects are discussed. (2) Exploiting nanoscale effects in phase change memories: Scaling devices to ever-smaller dimensions is incentivized by the requirement to achieve higher storage densities and less power consumption. Eventually, confinement and interfacial effects will govern the device characteristics. Anticipating these consequences, the feasibility to use a single element, Antimony, is assessed for the first time. The power efficiency, stability against crystallization, and drift are characterized under different degrees of confinement. (3) State-dependent drift in a projected memory cell: New device concepts are aiming to reduce drift by decoupling the cell resistance from the electronic properties of the amorphous phase. A shunt resistor scaling with the amount of amorphous material is added. Simulations and the drift characteristics of a projected device put the idealized concept to the test. The contact resistance between the phase change material and the shunt resistor is identified as a decisive parameter to achieve the desired device properties. △ Less

Submitted 5 January, 2024; originally announced January 2024.

Comments: PhD thesis

Gradient descent-based programming of analog in-memory computing cores

Authors: Julian Büchel, Athanasios Vasilopoulos, Benedikt Kersting, Frederic Odermatt, Kevin Brew, Injo Ok, Sam Choi, Iqbal Saraf, Victor Chan, Timothy Philip, Nicole Saulnier, Vijay Narayanan, Manuel Le Gallo, Abu Sebastian

Abstract: The precise programming of crossbar arrays of unit-cells is crucial for obtaining high matrix-vector-multiplication (MVM) accuracy in analog in-memory computing (AIMC) cores. We propose a radically different approach based on directly minimizing the MVM error using gradient descent with synthetic random input data. Our method significantly reduces the MVM error compared with conventional unit-cell… ▽ More The precise programming of crossbar arrays of unit-cells is crucial for obtaining high matrix-vector-multiplication (MVM) accuracy in analog in-memory computing (AIMC) cores. We propose a radically different approach based on directly minimizing the MVM error using gradient descent with synthetic random input data. Our method significantly reduces the MVM error compared with conventional unit-cell by unit-cell iterative programming. It also eliminates the need for high-resolution analog-to-digital converters (ADCs) to read the small unit-cell conductance during programming. Our method improves the experimental inference accuracy of ResNet-9 implemented on two phase-change memory (PCM)-based AIMC cores by 1.26%. △ Less

Submitted 26 May, 2023; originally announced May 2023.

Journal ref: 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 33.1.1-33.1.4

A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference

Authors: Manuel Le Gallo, Riduan Khaddam-Aljameh, Milos Stanisavljevic, Athanasios Vasilopoulos, Benedikt Kersting, Martino Dazzi, Geethan Karunaratne, Matthias Braendli, Abhairaj Singh, Silvia M. Mueller, Julian Buechel, Xavier Timoneda, Vinay Joshi, Urs Egger, Angelo Garofalo, Anastasios Petropoulos, Theodore Antonakopoulos, Kevin Brew, Samuel Choi, Injo Ok, Timothy Philip, Victor Chan, Claire Silvestre, Ishtiaq Ahsan, Nicole Saulnier , et al. (4 additional authors not shown)

Abstract: The need to repeatedly shuttle around synaptic weight values from memory to processing units has been a key source of energy inefficiency associated with hardware implementation of artificial neural networks. Analog in-memory computing (AIMC) with spatially instantiated synaptic weights holds high promise to overcome this challenge, by performing matrix-vector multiplications (MVMs) directly withi… ▽ More The need to repeatedly shuttle around synaptic weight values from memory to processing units has been a key source of energy inefficiency associated with hardware implementation of artificial neural networks. Analog in-memory computing (AIMC) with spatially instantiated synaptic weights holds high promise to overcome this challenge, by performing matrix-vector multiplications (MVMs) directly within the network weights stored on a chip to execute an inference workload. However, to achieve end-to-end improvements in latency and energy consumption, AIMC must be combined with on-chip digital operations and communication to move towards configurations in which a full inference workload is realized entirely on-chip. Moreover, it is highly desirable to achieve high MVM and inference accuracy without application-wise re-tuning of the chip. Here, we present a multi-core AIMC chip designed and fabricated in 14-nm complementary metal-oxide-semiconductor (CMOS) technology with backend-integrated phase-change memory (PCM). The fully-integrated chip features 64 256x256 AIMC cores interconnected via an on-chip communication network. It also implements the digital activation functions and processing involved in ResNet convolutional neural networks and long short-term memory (LSTM) networks. We demonstrate near software-equivalent inference accuracy with ResNet and LSTM networks while implementing all the computations associated with the weight layers and the activation functions on-chip. The chip can achieve a maximal throughput of 63.1 TOPS at an energy efficiency of 9.76 TOPS/W for 8-bit input/output matrix-vector multiplications. △ Less

Submitted 6 December, 2022; originally announced December 2022.

Journal ref: Nature Electronics 6, 680-693 (2023)

Measurement of onset of structural relaxation in melt-quenched phase change materials

Authors: Benedikt Kersting, Syed Ghazi Sarwat, Manuel Le Gallo, Kevin Brew, Sebastian Walfort, Nicole Saulnier, Martin Salinga, Abu Sebastian

Abstract: Chalcogenide phase change materials enable non-volatile, low-latency storage-class memory. They are also being explored for new forms of computing such as neuromorphic and in-memory computing. A key challenge, however, is the temporal drift in the electrical resistance of the amorphous states that encode data. Drift, caused by the spontaneous structural relaxation of the newly recreated melt-quenc… ▽ More Chalcogenide phase change materials enable non-volatile, low-latency storage-class memory. They are also being explored for new forms of computing such as neuromorphic and in-memory computing. A key challenge, however, is the temporal drift in the electrical resistance of the amorphous states that encode data. Drift, caused by the spontaneous structural relaxation of the newly recreated melt-quenched amorphous phase, has consistently been observed to have a logarithmic dependence in time. Here, we show that this observation is valid only in a certain observable timescale. Using threshold-switching voltage as the measured variable, based on temperature-dependent and short timescale electrical characterization, we experimentally measure the onset of drift. This additional feature of the structural relaxation dynamics serves as a new benchmark to appraise the different classical models to explain drift. △ Less

Submitted 11 June, 2021; originally announced June 2021.