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Demonstration of low power and highly uniform 6-bit operation in SiO2-based memristors embedded with Pt nanoparticles
Authors:
G. Kleitsiotis,
P. Bousoulas,
S. D. Mantas,
C. Tsioustas,
I. A. Fyrigos,
G. Sirakoulis,
D. Tsoukalas
Abstract:
In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a 1-Transistor-1-Memristor configuration. Compared to the reference sample where no NPs were embedded, an enlarged memory window was recorded in conjunction with reduced variabili…
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In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a 1-Transistor-1-Memristor configuration. Compared to the reference sample where no NPs were embedded, an enlarged memory window was recorded in conjunction with reduced variability for both switching states. A comprehensive numerical model was also applied to shed light on this enhanced performance, which was attributed to the spatial confinement effect induced by the presence of the Pt NPs and its impact on the properties of the percolating conducting filaments (CFs). Although 5-bit precision was demonstrated with the application of the incremental-step-pulse-programming (ISPP) algorithm, the reset process was unreliable and the output current increased abnormally when exceeded the value of 150 uA. As a result, the multibit operation was limited. To address this issue, a modified scheme was developed to accurately control the distance between the various resistance levels and achieve highly reliable 6-bit precision. Our work provides valuable insights for the development of energy-efficient memories for applications where a high density of conductance levels is required.
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Submitted 19 June, 2024;
originally announced June 2024.
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Versatile Filamentary Resistive Switching Model
Authors:
Iosif-Angelos Fyrigos,
Vasileios Ntinas,
Georgios Ch. Sirakoulis,
Panagiotis Dimitrakis,
Ioannis G. Karafyllidis
Abstract:
Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain their operation and to optimize their fabrication parameters. All existing memristor models are trade-offs between accuracy, universality and realism, but, to th…
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Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain their operation and to optimize their fabrication parameters. All existing memristor models are trade-offs between accuracy, universality and realism, but, to the best of our knowledge, none of them is purely characterized as quantum mechanical, despite the fact that quantum mechanical processes are a major part of the memristor operation. In this paper, we employ quantum mechanical methods to develop a complete and accurate filamentary model for the resistance variation during memristor's operating cycle. More specifically, we apply quantum walks to model and compute the motion of atoms forming the filament, tight-binding Hamiltonians to capture the filament structure and the Non-Equilibrium Green's Function (NEGF) method to compute the conductance of the device. Furthermore, we proceeded with the parallelization of the overall model through Graphical Processing Units (GPUs) to accelerate our computations and enhance the model's performance adequately. Our simulation results successfully reproduce the resistive switching characteristics of memristors devices, match with existing fabricated devices experimental data, prove the efficacy and robustness of the proposed model in terms of multi-parameterization, and provide a new and useful insight into its operation.
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Submitted 19 August, 2020; v1 submitted 17 August, 2020;
originally announced August 2020.
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Memristive Learning Cellular Automata: Theory and Applications
Authors:
Rafailia-Eleni Karamani,
Iosif-Angelos Fyrigos,
Vasileios Ntinas,
Orestis Liolis,
Giorgos Dimitrakopoulos,
Mustafa Altun,
Andrew Adamatzky,
Mircea R. Stan,
Georgios Ch. Sirakoulis
Abstract:
Memristors are novel non volatile devices that manage to combine storing and processing capabilities in the same physical place.Their nanoscale dimensions and low power consumption enable the further design of various nanoelectronic processing circuits and corresponding computing architectures, like neuromorhpic, in memory, unconventional, etc.One of the possible ways to exploit the memristor's ad…
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Memristors are novel non volatile devices that manage to combine storing and processing capabilities in the same physical place.Their nanoscale dimensions and low power consumption enable the further design of various nanoelectronic processing circuits and corresponding computing architectures, like neuromorhpic, in memory, unconventional, etc.One of the possible ways to exploit the memristor's advantages is by combining them with Cellular Automata (CA).CA constitute a well known non von Neumann computing architecture that is based on the local interconnection of simple identical cells forming N-dimensional grids.These local interconnections allow the emergence of global and complex phenomena.In this paper, we propose a hybridization of the CA original definition coupled with memristor based implementation, and, more specifically, we focus on Memristive Learning Cellular Automata (MLCA), which have the ability of learning using also simple identical interconnected cells and taking advantage of the memristor devices inherent variability.The proposed MLCA circuit level implementation is applied on optimal detection of edges in image processing through a series of SPICE simulations, proving its robustness and efficacy.
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Submitted 15 March, 2020;
originally announced March 2020.
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Memristive oscillatory circuits for resolution of NP-complete logic puzzles: Sudoku case
Authors:
Theodoros Panagiotis Chatzinikolaou,
Iosif-Angelos Fyrigos,
Rafailia-Eleni Karamani,
Vasileios Ntinas,
Giorgos Dimitrakopoulos,
Sorin Cotofana,
Georgios Ch. Sirakoulis
Abstract:
Memristor networks are capable of low-power and massive parallel processing and information storage. Moreover, they have presented the ability to apply for a vast number of intelligent data analysis applications targeting mobile edge devices and low power computing. Beyond the memory and conventional computing architectures, memristors are widely studied in circuits aiming for increased intelligen…
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Memristor networks are capable of low-power and massive parallel processing and information storage. Moreover, they have presented the ability to apply for a vast number of intelligent data analysis applications targeting mobile edge devices and low power computing. Beyond the memory and conventional computing architectures, memristors are widely studied in circuits aiming for increased intelligence that are suitable to tackle complex problems in a power and area efficient manner, offering viable solutions oftenly arriving also from the biological principles of living organisms. In this paper, a memristive circuit exploiting the dynamics of oscillating networks is utilized for the resolution of very popular and NP-complete logic puzzles, like the well-known "Sudoku". More specifically, the proposed circuit design methodology allows for appropriate usage of interconnections' advantages in a oscillation network and of memristor's switching dynamics resulting to logic-solvable puzzle-instances. The reduced complexity of the proposed circuit and its increased scalability constitute its main advantage against previous approaches and the broadly presented SPICE based simulations provide a clear proof of concept of the aforementioned appealing characteristics.
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Submitted 15 February, 2020;
originally announced February 2020.
