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RedBit: An End-to-End Flexible Framework for Evaluating the Accuracy of Quantized CNNs
Authors:
André Santos,
João Dinis Ferreira,
Onur Mutlu,
Gabriel Falcao
Abstract:
In recent years, Convolutional Neural Networks (CNNs) have become the standard class of deep neural network for image processing, classification and segmentation tasks. However, the large strides in accuracy obtained by CNNs have been derived from increasing the complexity of network topologies, which incurs sizeable performance and energy penalties in the training and inference of CNNs. Many rece…
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In recent years, Convolutional Neural Networks (CNNs) have become the standard class of deep neural network for image processing, classification and segmentation tasks. However, the large strides in accuracy obtained by CNNs have been derived from increasing the complexity of network topologies, which incurs sizeable performance and energy penalties in the training and inference of CNNs. Many recent works have validated the effectiveness of parameter quantization, which consists in reducing the bit width of the network's parameters, to enable the attainment of considerable performance and energy efficiency gains without significantly compromising accuracy. However, it is difficult to compare the relative effectiveness of different quantization methods. To address this problem, we introduce RedBit, an open-source framework that provides a transparent, extensible and easy-to-use interface to evaluate the effectiveness of different algorithms and parameter configurations on network accuracy. We use RedBit to perform a comprehensive survey of five state-of-the-art quantization methods applied to the MNIST, CIFAR-10 and ImageNet datasets. We evaluate a total of 2300 individual bit width combinations, independently tuning the width of the network's weight and input activation parameters, from 32 bits down to 1 bit (e.g., 8/8, 2/2, 1/32, 1/1, for weights/activations). Upwards of 20000 hours of computing time in a pool of state-of-the-art GPUs were used to generate all the results in this paper. For 1-bit quantization, the accuracy losses for the MNIST, CIFAR-10 and ImageNet datasets range between [0.26%, 0.79%], [9.74%, 32.96%] and [10.86%, 47.36%] top-1, respectively. We actively encourage the reader to download the source code and experiment with RedBit, and to submit their own observed results to our public repository, available at https://github.com/IT-Coimbra/RedBit.
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Submitted 15 January, 2023;
originally announced January 2023.
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pLUTo: Enabling Massively Parallel Computation in DRAM via Lookup Tables
Authors:
João Dinis Ferreira,
Gabriel Falcao,
Juan Gómez-Luna,
Mohammed Alser,
Lois Orosa,
Mohammad Sadrosadati,
Jeremie S. Kim,
Geraldo F. Oliveira,
Taha Shahroodi,
Anant Nori,
Onur Mutlu
Abstract:
Data movement between the main memory and the processor is a key contributor to execution time and energy consumption in memory-intensive applications. This data movement bottleneck can be alleviated using Processing-in-Memory (PiM). One category of PiM is Processing-using-Memory (PuM), in which computation takes place inside the memory array by exploiting intrinsic analog properties of the memory…
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Data movement between the main memory and the processor is a key contributor to execution time and energy consumption in memory-intensive applications. This data movement bottleneck can be alleviated using Processing-in-Memory (PiM). One category of PiM is Processing-using-Memory (PuM), in which computation takes place inside the memory array by exploiting intrinsic analog properties of the memory device. PuM yields high performance and energy efficiency, but existing PuM techniques support a limited range of operations. As a result, current PuM architectures cannot efficiently perform some complex operations (e.g., multiplication, division, exponentiation) without large increases in chip area and design complexity.
To overcome these limitations of existing PuM architectures, we introduce pLUTo (processing-using-memory with lookup table (LUT) operations), a DRAM-based PuM architecture that leverages the high storage density of DRAM to enable the massively parallel storing and querying of lookup tables (LUTs). The key idea of pLUTo is to replace complex operations with low-cost, bulk memory reads (i.e., LUT queries) instead of relying on complex extra logic.
We evaluate pLUTo across 11 real-world workloads that showcase the limitations of prior PuM approaches and show that our solution outperforms optimized CPU and GPU baselines by an average of 713$\times$ and 1.2$\times$, respectively, while simultaneously reducing energy consumption by an average of 1855$\times$ and 39.5$\times$. Across these workloads, pLUTo outperforms state-of-the-art PiM architectures by an average of 18.3$\times$. We also show that different versions of pLUTo provide different levels of flexibility and performance at different additional DRAM area overheads (between 10.2% and 23.1%). pLUTo's source code is openly and fully available at https://github.com/CMU-SAFARI/pLUTo.
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Submitted 23 January, 2025; v1 submitted 15 April, 2021;
originally announced April 2021.
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SIMDRAM: A Framework for Bit-Serial SIMD Processing Using DRAM
Authors:
Nastaran Hajinazar,
Geraldo F. Oliveira,
Sven Gregorio,
João Dinis Ferreira,
Nika Mansouri Ghiasi,
Minesh Patel,
Mohammed Alser,
Saugata Ghose,
Juan Gómez-Luna,
Onur Mutlu
Abstract:
Processing-using-DRAM has been proposed for a limited set of basic operations (i.e., logic operations, addition). However, in order to enable the full adoption of processing-using-DRAM, it is necessary to provide support for more complex operations. In this paper, we propose SIMDRAM, a flexible general-purpose processing-using-DRAM framework that enables massively-parallel computation of a wide ra…
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Processing-using-DRAM has been proposed for a limited set of basic operations (i.e., logic operations, addition). However, in order to enable the full adoption of processing-using-DRAM, it is necessary to provide support for more complex operations. In this paper, we propose SIMDRAM, a flexible general-purpose processing-using-DRAM framework that enables massively-parallel computation of a wide range of operations by using each DRAM column as an independent SIMD lane to perform bit-serial operations. SIMDRAM consists of three key steps to enable a desired operation in DRAM: (1) building an efficient majority-based representation of the desired operation, (2) mapping the operation input and output operands to DRAM rows and to the required DRAM commands that produce the desired operation, and (3) executing the operation. These three steps ensure efficient computation of any arbitrary and complex operation in DRAM. The first two steps give users the flexibility to efficiently implement and compute any desired operation in DRAM. The third step controls the execution flow of the in-DRAM computation, transparently from the user. We comprehensively evaluate SIMDRAM's reliability, area overhead, operation throughput, and energy efficiency using a wide range of operations and seven diverse real-world kernels to demonstrate its generality. Our results show that SIMDRAM provides up to 5.1x higher operation throughput and 2.5x higher energy efficiency than a state-of-the-art in-DRAM computing mechanism, and up to 2.5x speedup for real-world kernels while incurring less than 1% DRAM chip area overhead. Compared to a CPU and a high-end GPU, SIMDRAM is 257x and 31x more energy-efficient, while providing 93x and 6x higher operation throughput, respectively.
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Submitted 22 December, 2020;
originally announced December 2020.
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WoLFRaM: Enhancing Wear-Leveling and Fault Tolerance in Resistive Memories using Programmable Address Decoders
Authors:
Leonid Yavits,
Lois Orosa,
Suyash Mahar,
João Dinis Ferreira,
Mattan Erez,
Ran Ginosar,
Onur Mutlu
Abstract:
Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes across the entire memory, and 2) fault tolerance, to correct memory cell failures. However, one of the main open challenges in extending the lifetime of existi…
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Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes across the entire memory, and 2) fault tolerance, to correct memory cell failures. However, one of the main open challenges in extending the lifetime of existing resistive memories is to make both techniques work together seamlessly and efficiently. To address this challenge, we propose WoLFRaM, a new mechanism that combines both wear-leveling and fault tolerance techniques at low cost by using a programmable resistive address decoder (PRAD). The key idea of WoLFRaM is to use PRAD for implementing 1) a new efficient wear-leveling mechanism that remaps write accesses to random physical locations on the fly, and 2) a new efficient fault tolerance mechanism that recovers from faults by remapping failed memory blocks to available physical locations. Our evaluations show that, for a Phase Change Memory (PCM) based system with cell endurance of 108 writes, WoLFRaM increases the memory lifetime by 68% compared to a baseline that implements the best state-of-the-art wear-leveling and fault correction mechanisms. WoLFRaM's average / worst-case performance and energy overheads are 0.51% / 3.8% and 0.47% / 2.1% respectively.
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Submitted 6 October, 2020;
originally announced October 2020.
