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A CMOS-based Characterisation Platform for Emerging RRAM Technologies
Authors:
Andrea Mifsud,
Jiawei Shen,
Peilong Feng,
Lijie Xie,
Chaohan Wang,
Yihan Pan,
Sachin Maheshwari,
Shady Agwa,
Spyros Stathopoulos,
Shiwei Wang,
Alexander Serb,
Christos Papavassiliou,
Themis Prodromakis,
Timothy G. Constandinou
Abstract:
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel…
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Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device's resistance range to be between 1k$Ω$ and 10M$Ω$ with a minimum voltage range of $\pm$1.5V on the device.
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Submitted 17 May, 2022;
originally announced May 2022.
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An Open-Source RRAM Compiler
Authors:
Dimitris Antoniadis,
Andrea Mifsud,
Peilong Feng,
Timothy G. Constandinou
Abstract:
Memory compilers are necessary tools to boost the design procedure of digital circuits. However, only a few are available to academia. Resistive Random Access Memory (RRAM) is characterised by high density, high speed, non volatility and is a potential candidate of future digital memories. To the best of the authors' knowledge, this paper presents the first open source RRAM compiler for automatic…
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Memory compilers are necessary tools to boost the design procedure of digital circuits. However, only a few are available to academia. Resistive Random Access Memory (RRAM) is characterised by high density, high speed, non volatility and is a potential candidate of future digital memories. To the best of the authors' knowledge, this paper presents the first open source RRAM compiler for automatic memory generation including its peripheral circuits, verification and timing characterisation. The RRAM compiler is written with Cadence SKILL programming language and is integrated in Cadence environment. The layout verification procedure takes place in Siemens Mentor Calibre tool. The technology used by the compiler is TSMC 180nm. This paper analyses the novel results of a plethora of M x N RRAMs generated by the compiler, up to M = 128, N = 64 and word size B = 16 bits, for clock frequency equal to 12.5 MHz. Finally, the compiler achieves density of up to 0.024 Mb/mm2.
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Submitted 31 May, 2022; v1 submitted 9 November, 2021;
originally announced November 2021.
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Open-Source Memory Compiler for Automatic RRAM Generation and Verification
Authors:
Dimitrios Antoniadis,
Peilong Feng,
Andrea Mifsud,
Timothy G. Constandinou
Abstract:
The lack of open-source memory compilers in academia typically causes significant delays in research and design implementations. This paper presents an open-source memory compiler that is directly integrated within the Cadence Virtuoso environment using physical verification tools provided by Mentor Graphics (Calibre). It facilitates the entire memory generation process from netlist generation to…
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The lack of open-source memory compilers in academia typically causes significant delays in research and design implementations. This paper presents an open-source memory compiler that is directly integrated within the Cadence Virtuoso environment using physical verification tools provided by Mentor Graphics (Calibre). It facilitates the entire memory generation process from netlist generation to layout implementation, and physical implementation verification. To the best of our knowledge, this is the first open-source memory compiler that has been developed specifically to automate Resistive Random Access Memory (RRAM) generation. RRAM holds the promise of achieving high speed, high density and non-volatility. A novel RRAM architecture, additionally is proposed, and a number of generated RRAM arrays are evaluated to identify their worst case control line parasitics and worst case settling time across the memristors of their cells. The total capacitance of lines SEL, N and P is 5.83 fF/cell, 3.31 fF/cell and 2.48 fF/cell respectively, while the total calculated resistance for SEL is 1.28 Ohm/cell and 0.14 Ohm/cell for both N and P lines.
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Submitted 30 April, 2021;
originally announced April 2021.
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Hybrid CMOS/Memristor Circuit Design Methodology
Authors:
Sachin Maheshwari,
Spyros Stathopoulos,
Jiaqi Wang,
Alexander Serb,
Yihan Pan,
Andrea Mifsud,
Lieuwe B. Leene,
Jiawei Shen,
Christos Papavassiliou,
Timothy G. Constandinou,
Themistoklis Prodromakis
Abstract:
RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the development of an accessible and user-friendly design flow, supported by an industry-grade toolchain. In this work, we demonstrate with examples an end-to-end desig…
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RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the development of an accessible and user-friendly design flow, supported by an industry-grade toolchain. In this work, we demonstrate with examples an end-to-end design flow for RRAM-based electronics, from the introduction of a custom RRAM model into our chosen CAD tool to performing layout-versus-schematic and post-layout checks including the RRAM device. We envisage that this step-by-step guide to introducing RRAM into the standard integrated circuit design flow will be a useful reference document for both device developers who wish to benchmark their technologies and circuit designers who wish to experiment with RRAM-enhanced systems.
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Submitted 20 October, 2021; v1 submitted 3 December, 2020;
originally announced December 2020.
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A 68 uW 31 kS/s Fully-Capacitive Noise-Shaping SAR ADC with 102 dB SNDR
Authors:
Lieuwe B. Leene,
Shiva Letchumanan,
Timothy G. Constandinou
Abstract:
This paper presents a 17 bit analogue-to-digital converter that incorporates mismatch and quantisation noise-shaping techniques into an energy-saving 10 bit successive approximation quantiser to increase the dynamic range by another 42 dB. We propose a novel fully-capacitive topology which allows for high-speed asynchronous conversion together with a background calibration scheme to reduce the ove…
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This paper presents a 17 bit analogue-to-digital converter that incorporates mismatch and quantisation noise-shaping techniques into an energy-saving 10 bit successive approximation quantiser to increase the dynamic range by another 42 dB. We propose a novel fully-capacitive topology which allows for high-speed asynchronous conversion together with a background calibration scheme to reduce the oversampling requirement by 10x compared to prior-art. A 0.18 um CMOS technology is used to demonstrate preliminary simulation results together with analytic measures that optimise parameter and topology selection. The proposed system is able to achieve a FoMS of 183 dB for a maximum signal bandwidth of 15.6 kHz while dissipating 68 uW from a 1.8 V supply. A peak SNDR of 102 dB is demonstrated for this rate with a 0.201 mm^2 area requirement.
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Submitted 20 March, 2019;
originally announced March 2019.
