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14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
Authors:
F. F. Murzakhanov,
M. A. Sadovnikova,
G. V. Mamin,
S. S. Nagalyuk,
H. J. von Bardeleben,
W. G. Schmidt,
T. Biktagirov,
U. Gerstmann,
V. A. Soltamov
Abstract:
The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei. As quantum applications based on a polarization transfer from the electron spin to the nuclei require the knowledge of the electron-nuclear interaction parameters, we have used high-frequency (94 GHz) electron-nuclear…
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The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei. As quantum applications based on a polarization transfer from the electron spin to the nuclei require the knowledge of the electron-nuclear interaction parameters, we have used high-frequency (94 GHz) electron-nuclear double resonance spectroscopy combined with first-principles density functional theory to investigate the hyperfine and nuclear quadrupole interactions of the basal and axial NV centers. We observed that the four inequivalent NV configurations (hk, kh, hh, and kk) exhibit different electron-nuclear interaction parameters, suggesting that each NV center may act as a separate optically addressable qubit. Finally, we rationalized the observed differences in terms of distinctions in the local atomic structures of the NV configurations. Thus, our results provide the basic knowledge for an extension of quantum protocols involving the 14N nuclear spin.
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Submitted 10 April, 2024;
originally announced April 2024.
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Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity
Authors:
Zeyu Chi,
Corinne Sartel,
Yunlin Zheng,
Sushrut Modak,
Leonid Chernyak,
Christian M Schaefer,
Jessica Padilla,
Jose Santiso,
Arie Ruzin,
Anne-Marie Goncalves,
Jurgen von Bardeleben,
Gerard Guillot,
Yves Dumont,
Amador Perez-Tomas,
Ekaterine Chikoidze
Abstract:
The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperatu…
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The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperature. A low activation energy of conductivity as Ea2=170 meV was determined, associated to the oxygen - gallium native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV.
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Submitted 1 June, 2023;
originally announced June 2023.
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Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
Authors:
Zhao Mu,
S. A. Zargaleh,
H. J. von Bardeleben,
Johannes E. Fröch,
Hongbing Cai,
Xinge Yang,
Jianqun Yang,
Xingji Li,
Igor Aharonovich,
Weibo Gao
Abstract:
Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation, and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in S…
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Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation, and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results are highlighting the key role of NV centers in SiC as a potential candidate for quantum information processing.
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Submitted 2 October, 2022; v1 submitted 6 February, 2020;
originally announced February 2020.
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Proton Irradiation Induced Defects in \b{eta}-Ga2O3: a combined EPR and Theory Study
Authors:
Hans Jürgen von Bardeleben,
Shengqiang Zhou,
Uwe Gerstmann,
Dmitry Skachkov,
Walter R. L. Lambrecht,
QuocDuy Ho,
Peter Deák
Abstract:
Proton irradiation of both n-type and semi-insulating bulk samples of \b{eta}-Ga2O3 leads to the formation of one paramagnetic defect with spin S=1/2, monoclinic point symmetry, a g-tensor with principal values of gb=2.0313, gc=2.0079, ga*= 2.0025 and quasi isotropic superhyperfine interaction of 13G with two equivalent Ga neigbours. Its high introduction rate indicates it to be a primary irradiat…
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Proton irradiation of both n-type and semi-insulating bulk samples of \b{eta}-Ga2O3 leads to the formation of one paramagnetic defect with spin S=1/2, monoclinic point symmetry, a g-tensor with principal values of gb=2.0313, gc=2.0079, ga*= 2.0025 and quasi isotropic superhyperfine interaction of 13G with two equivalent Ga neigbours. Its high introduction rate indicates it to be a primary irradiation induced defect. At low temperature, photoexcitation transforms this defect into a different metastable S=1/2 center with principal g-values of gb=2.0064, gc=2.0464, ga*= 2.0024 and a reduced hyperfine interaction of 9G. This metastable defect is stable up to T=100K, when it switches back to the previous configuration. Density functional theory calculations of the Spin Hamiltonian parameters of various intrinsic defects are carried out using the Gauge Including Projector Augmented Wave method in order to determine the microscopic structure of these defects.Our results do not support the intuitive model of the isolated octahedral or tetrahedral gallium vacancy, VGa2-, but favor the model of a gallium vacancy complex VGa-Gai-VGa.
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Submitted 13 November, 2018;
originally announced November 2018.
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Bright room temperature single photon source at telecom range in cubic silicon carbide
Authors:
Junfeng Wang,
Yu Zhou,
Ziyu Wang,
Abdullah Rasmita,
Jianqun Yang,
Xingji Li,
Hans Jürgen von Bardeleben,
Weibo Gao
Abstract:
Single photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitter…
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Single photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitters are photostable and bright at room temperature with a count rate of ~ MHz. Together with the fact that SiC is a growth and fabrication-friendly material, our result may pave the way for its future application in quantum communication technology applications.
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Submitted 15 September, 2018;
originally announced September 2018.
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Computational identification of Ga-vacancy related electron paramagnetic resonance centers in $β$-Ga$_2$O$_3$
Authors:
Dmitry Skachkov,
Walter R. L. Lambrecht,
Hans Jürgen von Bardeleben,
Uwe Gerstmann,
Quoc Duy Ho,
Peter Deák
Abstract:
A combined experimental/theoretical study of the EPR in irradiated $β$-Ga$_2$O$_3$ is presented. Four EPR spectra, two $S=1/2$ and two $S=1$, are observed after high-energy proton or electron irradiation. One of the S=1/2 spectra (EPR1) can be observed at room temperature and below and is characterized by the spin Hamiltonian parameters $g_b=2.0313$, $g_c=2.0079$, $g_{a*}=2.0025$ and a quasi isotr…
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A combined experimental/theoretical study of the EPR in irradiated $β$-Ga$_2$O$_3$ is presented. Four EPR spectra, two $S=1/2$ and two $S=1$, are observed after high-energy proton or electron irradiation. One of the S=1/2 spectra (EPR1) can be observed at room temperature and below and is characterized by the spin Hamiltonian parameters $g_b=2.0313$, $g_c=2.0079$, $g_{a*}=2.0025$ and a quasi isotropic hyperfine interaction with two equivalent Ga neighbors of $~\sim$14 G on $^{69}$Ga. The second (EPR2) is observed after photoexcitation (with threshold 2.8 eV) at low temperature and is characterized by $g_b=2.0064$, $g_c=2.0464$, $g_{a*}=2.0024$ and a quasi isotropic hyperfine interaction with two equivalent Ga neighbors of 10 G. A spin $S=1$ spectrum with a similar g-tensor and a 50\% reduced hyperfine splitting accompanies each of these, which is indicative of a defect of two weakly coupled $S=1/2$ centers. DFT calculations of the magnetic resonance fingerprint of a wide variety of native defect models are carried out to identify these EPR centers in terms of specific defect configurations. The EPR1 center is proposed to correspond to a complex of two tetrahedral $V_\mathrm{Ga1}$ with an interstitial Ga in between them. This model was previously shown to have lower energy than the simple tetrahedral Ga vacancy and has a $2-/3-$ transition level higher than other $V_\mathrm{Ga}$ related models, which would explain why the other ones are already in their diamagnetic $3-$ state and are thus not observed if the Fermi level is pinned approximately at this level. The EPR2 spectra are proposed to correspond to the octahedral $V_\mathrm{Ga2}$. Models based on self-trapped holes and oxygen interstitials are ruled out because they would have hyperfine interaction with more than two Ga nuclei and because they can not support a corresponding $S=1$ center.
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Submitted 25 February, 2019; v1 submitted 16 August, 2018;
originally announced August 2018.
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Resonant magneto-acoustic switching: influence of Rayleigh wave frequency and wavevector
Authors:
Piotr Kuszewski,
Ibrahima S. Camara,
Nicolas Biarrotte,
Loic Becerra,
Jürgen von Bardeleben,
A. Lemaître,
Catherine Gourdon,
Jean-Yves Duquesne,
Laura Thevenard
Abstract:
We show on in-plane magnetized thin films that magnetization can be switched efficiently by 180 degrees using large amplitude Rayleigh waves travelling along the hard or easy magnetic axis. Large characteristic filament-like domains are formed in the latter case. Micromagnetic simulations clearly confirm that this multi-domain configuration is compatible with a resonant precessional mechanism. The…
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We show on in-plane magnetized thin films that magnetization can be switched efficiently by 180 degrees using large amplitude Rayleigh waves travelling along the hard or easy magnetic axis. Large characteristic filament-like domains are formed in the latter case. Micromagnetic simulations clearly confirm that this multi-domain configuration is compatible with a resonant precessional mechanism. The reversed domains are in both geometries several hundreds of μm^2, much larger than has been shown using spin transfer torque- or field-driven precessional switching. We show that surface acoustic waves can travel at least 1mm before addressing a given area, and can interfere to create magnetic stripes that can be positionned with a sub-micronic precision.
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Submitted 28 February, 2018;
originally announced February 2018.
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Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study
Authors:
A. Csóré,
H. J. von Bardeleben,
J. L. Cantin,
A. Gali
Abstract:
Fluorescent paramagnetic defects in solids have become attractive systems for quantum information processing in the recent years. One of the leading contenders is the negatively charged nitrogen-vacancy defect in diamond with visible emission but alternative solution in technologically mature host is an immediate quest for many applications in this field. It has been recently found that various po…
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Fluorescent paramagnetic defects in solids have become attractive systems for quantum information processing in the recent years. One of the leading contenders is the negatively charged nitrogen-vacancy defect in diamond with visible emission but alternative solution in technologically mature host is an immediate quest for many applications in this field. It has been recently found that various polytypes of silicon carbide (SiC), that are standard semiconductors with wafer scale technology, can host nitrogen-vacancy defect (NV) that could be an alternative qubit candidate with emission in the near infrared region. However, it is much less known about this defect than its counterpart in diamond. The inequivalent sites within a polytype and the polytype variations offer a family of NV defects. However, there is an insufficient knowledge on the magneto-optical properties of these configurations. Here we carry out density functional theory calculations, in order to characterize the numerous forms of NV defects in the most common polytypes of SiC including 3C, 4H and 6H, and we also provide new experimental data in 4H SiC. Our calculations mediate the identification of individual NV qubits in SiC polytypes. In addition, we discuss the formation of NV defects in SiC with providing detailed ionization energies of NV defect in SiC which reveals the critical optical excitation energies for ionizing this qubits in SiC. Our calculations unravel the challenges to produce NV defects in SiC with a desirable spin bath.
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Submitted 11 August, 2017; v1 submitted 17 May, 2017;
originally announced May 2017.
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Surface acoustic wave driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers
Authors:
Laura Thevenard,
Catherine Gourdon,
Jean-Yves Prieur,
Hans Jürgen von Bardeleben,
Serge Vincent,
Loic Becerra,
Ludovic Largeau,
Jean-Yves Duquesne
Abstract:
Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the layer, making it an ideal test material for the dynamic control of magnetization via magneto-striction. The time-domain measurement of the amplitude and phase o…
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Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the layer, making it an ideal test material for the dynamic control of magnetization via magneto-striction. The time-domain measurement of the amplitude and phase of the transmitted SAW during magnetic field sweeps indicated a clear resonant behavior at a field close to the one calculated to give a precession frequency equal to the SAW frequency. A resonance was observed from 5K to 85K, just below the Curie temperature of the layer. A full analytical treatment of the coupled magnetization/acoustic dynamics showed that the magneto-strictive coupling modifies the elastic constants of the material and accordingly the wave-vector solution to the elastic wave equation. The shape and position of the resonance were well reproduced by the calculations, in particular the fact that velocity (phase) variations resonated at lower fields than the acoustic attenuation variations.
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Submitted 25 June, 2014;
originally announced June 2014.
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Irreversible magnetization switching using surface acoustic waves
Authors:
Laura Thevenard,
Catherine Gourdon,
Jean-Yves Duquesne,
Emmanuel Peronne,
Hans Jürgen von Bardeleben,
Henri Jaffres,
Sankara Ruttala,
Aristide Lemaître
Abstract:
An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magne…
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An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magnetic anisotropy parameters through inverse magneto-striction, which triggers precession, and eventually reversal. Using the micromagnetic parameters of a fully characterized layer of the magnetic semiconductor (Ga,Mn)(As,P), we then show that there is a large window of accessible experimental conditions (SAW amplitude/wave-vector, field amplitude/orientation) allowing irreversible switching. As this is a resonant process, the influence of the detuning of the SAW frequency to the magnetic system's eigenfrequency is also explored. Finally, another - non-resonant - switching mechanism is briefly contemplated, and found to be applicable to (Ga,Mn)(As,P): SAW-assisted domain nucleation. In this case, a small perpendicular field is applied opposite the initial magnetization and the passage of the SAW lowers the domain nucleation barrier.
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Submitted 9 January, 2013;
originally announced January 2013.
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Field-induced domain wall propagation: beyond the one-dimensional model
Authors:
L. Thevenard,
C. Gourdon,
S. Haghgoo,
J-P. Adam,
H. J. von Bardeleben,
A. Lemaître,
W. Schoch,
A. Thiaville
Abstract:
We have investigated numerically the field-driven propagation of perpendicularly magnetized ferromagnetic layers. It was then compared to the historical one-dimensional domain wall (DW) propagation model widely used in spintronics studies of magnetic nanostructures. In the particular regime of layer thickness (h) of the order of the exchange length, anomalous velocity peaks appear in the precessio…
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We have investigated numerically the field-driven propagation of perpendicularly magnetized ferromagnetic layers. It was then compared to the historical one-dimensional domain wall (DW) propagation model widely used in spintronics studies of magnetic nanostructures. In the particular regime of layer thickness (h) of the order of the exchange length, anomalous velocity peaks appear in the precessional regime, their shape and position shifting with h. This has also been observed experimentally. Analyses of the simulations show a distinct correlation between the curvature of the DW and the twist of the magnetization vector within it, and the velocity peak. Associating a phenomenological description of this twist with a four-coordinate DW propagation model, we reproduce very well these kinks and show that they result from the torque exerted by the stray field created by the domains on the twisted magnetization. The position of the peaks is well predicted from the DW's first flexural mode frequency, and depends strongly on the layer thickness. Comparison of the proposed model to DW propagation data obtained on dilute semiconductor ferromagnets GaMnAs and GaMnAsP sheds light on the origin of the measured peaks.
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Submitted 23 February, 2011;
originally announced February 2011.
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Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains
Authors:
Sanaz Haghgoo,
Murat Cubukcu,
Hans Jürgen Von Bardeleben,
Laura Thevenard,
Aristide Lemaître,
Catherine Gourdon
Abstract:
The incorporation of Phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As template. For perpendicular easy axis, using magneto-optical imaging a self-organized pattern of up- and down-magnetized domains is observed for the first time in a diluted magnetic semiconductor. Combining Kerr microscopy…
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The incorporation of Phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As template. For perpendicular easy axis, using magneto-optical imaging a self-organized pattern of up- and down-magnetized domains is observed for the first time in a diluted magnetic semiconductor. Combining Kerr microscopy, magnetometry and ferromagnetic resonance spectroscopy, the exchange constant and the domain wall width parameter are obtained as a function of temperature. The former quantifies the effective Mn-Mn ferromagnetic interaction. The latter is a key parameter for domain wall dynamics. The comparison with results obtained for (Ga,Mn)As/(Ga,In)As reveals the improved quality of the (Ga,Mn)As$_{1-y}$P$_y$ layers regarding domain wall pinning, an increase of the domain wall width parameter and of the effective Mn-Mn spin coupling. However, at constant Mn doping, no significant increase of this coupling is found with increasing P concentration in the investigated range.
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Submitted 10 May, 2010;
originally announced May 2010.
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Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers
Authors:
M. Cubukcu,
H. J. von Bardeleben,
Kh. Khazen,
J. L. Cantin,
O. Mauguin,
L. Largeau,
A. Lemaitre
Abstract:
Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying levels between 0 and 8.8 at % for a Mn doping level of ~ 7at%. We show that it is possible to obtain layers with robust ferromagnetism and either in-…
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Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying levels between 0 and 8.8 at % for a Mn doping level of ~ 7at%. We show that it is possible to obtain layers with robust ferromagnetism and either in-plane or out-of plane easy axes with small barriers for magnetization reorientation by phosphorous alloying with y< 6at% or y> 6at%. The critical temperatures are not significantly increased by the P alloying.
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Submitted 10 August, 2009; v1 submitted 1 August, 2009;
originally announced August 2009.
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Damping and magnetic anisotropy of ferromagnetic GaMnAs thin films
Authors:
Kh. Khazen,
H. J. von Bardeleben,
M. Cubukcu,
J. L. Cantin,
V. Novak,
K. Olejnik,
M. Cukr,
L. Thevenard,
A. Lemaitre
Abstract:
The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert damping factor "alpha" has been determined. At T=4K we obtain a minimum damping factor of "alpha" = 0.003 for…
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The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert damping factor "alpha" has been determined. At T=4K we obtain a minimum damping factor of "alpha" = 0.003 for the compressively stressed layer. Its value is not isotropic. It has a minimum value for the easy axes orientations of the magnetic field and increases with the measuring temperature. Its average value is for both type of films of the order of 0.01 in spite of strong differences in the inhomogeneous linewidth which vary between 20 Oe and 600 Oe for the layers grown on GaAs and GaInAs substrates respectively.
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Submitted 30 September, 2008; v1 submitted 26 September, 2008;
originally announced September 2008.
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Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory
Authors:
Catherine Gourdon,
Alexandre Dourlat,
Vincent Jeudy,
Khashayar Khazen,
Hans Jürgen Von Bardeleben,
Laura Thevenard,
Aristide Lemaître
Abstract:
The magnetic domain structure and magnetic properties of a ferromagnetic (Ga,Mn)As epilayer with perpendicular magnetic easy-axis are investigated. We show that, despite strong hysteresis, domain theory at thermodynamical equilibrium can be used to determine the micromagnetic parameters. Combining magneto-optical Kerr microscopy, magnetometry and ferromagnetic resonance measurements, we obtain t…
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The magnetic domain structure and magnetic properties of a ferromagnetic (Ga,Mn)As epilayer with perpendicular magnetic easy-axis are investigated. We show that, despite strong hysteresis, domain theory at thermodynamical equilibrium can be used to determine the micromagnetic parameters. Combining magneto-optical Kerr microscopy, magnetometry and ferromagnetic resonance measurements, we obtain the characteristic parameter for magnetic domains $λ_c$, the domain wall width and specific energy, and the spin stiffness constant as a function of temperature. The nucleation barrier for magnetization reversal and the Walker breakdown velocity for field-driven domain wall propagation are also estimated.
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Submitted 2 October, 2007;
originally announced October 2007.
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Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Aristide Lemaître,
Khashayar Khazen,
Jürgen Von Bardeleben
Abstract:
The magnetic properties of (Ga,Mn)As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while maintaining the manganese concentration constant. For such a series of films we have investigated the variation of the magnetization, the easy and h…
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The magnetic properties of (Ga,Mn)As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while maintaining the manganese concentration constant. For such a series of films we have investigated the variation of the magnetization, the easy and hard axes of magnetization, the critical temperatures, the coercive fields and the magnetocrystalline anisotropy constants as a function of temperature using magnetometry, ferromagnetic resonance and magneto-transport measurements. In particular, we evidenced that magnetic easy axes flipped from out-of-plane [001] to in-plane [100] axis, followed by the <110> axes, with increasing hole density and temperature. Our study concluded on a general agreement with mean-field theory predictions of the expected easy axis reversals, and of the weight of uniaxial and cubic anisotropies in this material.
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Submitted 23 February, 2007;
originally announced February 2007.
