Showing 1–7 of 7 results for author: von Allmen, P

Magnetic-field dependence of valley splitting for Si quantum wells grown on tilted SiGe substrates

Authors: Seungwon Lee, Paul von Allmen

Abstract: The valley splitting of the first few Landau levels is calculated as a function of the magnetic field for electrons confined in a strained silicon quantum well grown on a tilted SiGe substrate, using a parameterized tight-binding method. For a zero substrate tilt angle, the valley splitting slightly decreases with increasing magnetic field. In contrast, the valley splitting for a finite substrat… ▽ More The valley splitting of the first few Landau levels is calculated as a function of the magnetic field for electrons confined in a strained silicon quantum well grown on a tilted SiGe substrate, using a parameterized tight-binding method. For a zero substrate tilt angle, the valley splitting slightly decreases with increasing magnetic field. In contrast, the valley splitting for a finite substrate tilt angle exhibits a strong and non-monotonous dependence on the magnetic field strength. The valley splitting of the first Landau level shows an exponential increase followed by a slow saturation as the magnetic field strength increases. The valley splitting of the second and third Landau levels shows an oscillatory behavior. The non-monotonous dependence is explained by the phase variation of the Landau level wave function along the washboard-like interface between the tilted quantum well and the buffer material. The phase variation is the direct consequence of the misorientation between the crystal axis and the confinement direction of the quantum well. This result suggests that the magnitude of the valley splitting can be tuned by controlling the Landau-level filling factor through the magnetic field and the doping concentration. △ Less

Submitted 18 July, 2006; originally announced July 2006.

Zero valley splitting at zero magnetic field for strained Si/SiGe quantum wells grown on tilted substrates

Authors: Paul von Allmen, Seungwon Lee

Abstract: The electronic structure for a strained Si/SiGe quantum well grown on a tilted substrate with periodic steps is calculated using a parameterized tight-binding method. For a zero tilt angle the energy difference between the two lowest minima of the conduction band at the center of the Brillouin zone defines a non-zero valley splitting. At finite tilt angles, the two lowest conduction band minima… ▽ More The electronic structure for a strained Si/SiGe quantum well grown on a tilted substrate with periodic steps is calculated using a parameterized tight-binding method. For a zero tilt angle the energy difference between the two lowest minima of the conduction band at the center of the Brillouin zone defines a non-zero valley splitting. At finite tilt angles, the two lowest conduction band minima shift to k0 and -k0 in the Brillouin zone and have equal energy. The valley splitting for quantum wells grown on a tilted substrate is therefore equal to zero, which is a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials. △ Less

Submitted 14 June, 2006; originally announced June 2006.

Exchange in a silicon-based quantum dot quantum computer architecture

Authors: S. N. Coppersmith, Seungwon Lee, Paul von Allmen

Abstract: In bulk silicon, intervalley electronic interference has been shown to lead to strong oscillations in the exchange coupling between impurity electronic wavefunctions, posing a serious manufacturability problem for proposed quantum computers. Here we show that this problem does not arise in proposed architectures using Si/SiGe quantum dots because of the large in-plane strain in Si quantum wells… ▽ More In bulk silicon, intervalley electronic interference has been shown to lead to strong oscillations in the exchange coupling between impurity electronic wavefunctions, posing a serious manufacturability problem for proposed quantum computers. Here we show that this problem does not arise in proposed architectures using Si/SiGe quantum dots because of the large in-plane strain in Si quantum wells together with the strong confinement potential typical of heterostructures. △ Less

Submitted 25 August, 2004; originally announced August 2004.

Comments: 4 pages, 2 figures, submitted to APL

Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures

Authors: Olga L. Lazarenkova, Paul von Allmen, Fabiano Oyafuso, Seungwon Lee, Gerhard Klimeck

Abstract: Anharmonicity of the inter-atomic potential is taken into account for the quantitative simulation of the conduction and valence band offsets for highly-strained semiconductor heterostructures. The anharmonicity leads to a weaker compressive hydrostatic strain than that obtained with the commonly used quasi-harmonic approximation of the Keating model. Inclusion of the anharmonicity in the simulat… ▽ More Anharmonicity of the inter-atomic potential is taken into account for the quantitative simulation of the conduction and valence band offsets for highly-strained semiconductor heterostructures. The anharmonicity leads to a weaker compressive hydrostatic strain than that obtained with the commonly used quasi-harmonic approximation of the Keating model. Inclusion of the anharmonicity in the simulation of strained InAs/GaAs nanostructures results in an improvement of the electron band offset computed on an atomistic level by up to 100 meV compared to experiment. △ Less

Submitted 26 May, 2004; originally announced May 2004.

Comments: Submitted to Appl. Phys. Lett

Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

Authors: Seungwon Lee, Olga L. Lazarenkova, Fabiano Oyafuso, Paul von Allmen, Gerhard Klimeck

Abstract: The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and an empirical tight-binding model. By comparing a dot with and without a wetting layer, we find that the inclusion of the wetting layer weakens the strain inside the dot by only 1% relative change, while it reduces th… ▽ More The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and an empirical tight-binding model. By comparing a dot with and without a wetting layer, we find that the inclusion of the wetting layer weakens the strain inside the dot by only 1% relative change, while it reduces the energy gap between a confined electron and hole level by as much as 10%. The small change in the strain distribution indicates that strain relaxes only little through the thin wetting layer. The large reduction of the energy gap is attributed to the increase of the confining-potential width rather than the change of the potential height. First-order perturbation calculations or, alternatively, the addition of an InAs disk below the quantum dot confirm this conclusion. The effect of the wetting layer on the wave function is qualitatively different for the weakly confined electron state and the strongly confined hole state. The electron wave function shifts from the buffer to the wetting layer, while the hole shifts from the dot to the wetting layer. △ Less

Submitted 2 May, 2004; originally announced May 2004.

Comments: 14 pages, 3 figures, and 3 tables

Boundary conditions for the electronic structure of finite-extent, embedded semiconductor nanostructures

Authors: Seungwon Lee, Fabiano Oyafuso, Paul von Allmen, Gerhard Klimeck

Abstract: The modeling of finite-extent semiconductor nanostructures that are embedded in a host material requires the numerical treatment of the boundary in a finite simulation domain. For the study of a self-assembled InAs dot embedded in GaAs, three kinds of boundary conditions are examined within the empirical tight-binding model: (i) the periodic boundary condition, (ii) raising the orbital energies… ▽ More The modeling of finite-extent semiconductor nanostructures that are embedded in a host material requires the numerical treatment of the boundary in a finite simulation domain. For the study of a self-assembled InAs dot embedded in GaAs, three kinds of boundary conditions are examined within the empirical tight-binding model: (i) the periodic boundary condition, (ii) raising the orbital energies of surface atoms, and (iii) raising the energies of dangling bonds at the surface. The periodic boundary condition requires a smooth boundary and consequently a larger GaAs buffer than the two nonperiodic boundary conditions. Between the nonperiodic conditions, the dangling-bond energy shift is more efficient than the orbital-energy shift, in terms of the elimination of nonphysical surface states in the middle of the gap. A dangling-bond energy shift bigger than 5 eV efficiently eliminates all of the mid-gap surface states and leads to interior states that are highly insensitive to the change of the energy shift. △ Less

Submitted 19 November, 2003; originally announced November 2003.

Comments: 20 pages, 9 figures

Valley splitting in strained silicon quantum wells

Authors: Timothy B. Boykin, Gerhard Klimeck, M. A. Eriksson, Mark Friesen, S. N. Coppersmith, Paul von Allmen, Fabiano Oyafuso, Seungwon Lee

Abstract: A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO. A simple, analytically solvable tig… ▽ More A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO. A simple, analytically solvable tight-binding model is developed, it yields much physical insight, and it reproduces the behavior of the splitting in the NEMO results. The splitting is in general nonzero even in the absence of electric field in contrast to previous works. The splitting in a square well oscillates as a function of S, the number of layers in the quantum well, with a period that is determined by the location of the valley minimum in the Brillouin zone. The envelope of the splitting decays as $S^3$. Finally the feasibility of observing such oscillations experimentally in modern Si/SiGe heterostructures is discussed. △ Less

Submitted 29 September, 2003; originally announced September 2003.

Comments: 19 pages, including 4 figures

Journal ref: Appl. Phys. Lett. 84, 115 (2004)