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PdNeuRAM: Forming-Free, Multi-Bit Pd/HfO2 ReRAM for Energy-Efficient Computing
Authors:
Erbing Hua,
Theofilos Spyrou,
Majid Ahmadi,
Abdul Momin Syed,
Hanzhi Xun,
Laurentiu Braic,
Ewout van der Veer,
Nazek Elatab,
Anteneh Gebregiorgis,
Georgi Gaydadjiev,
Beatriz Noheda,
Said Hamdioui,
Ryoichi Ishihara,
Heba Abunahla
Abstract:
Memristor technology shows great promise for energy-efficient computing, yet it grapples with challenges like resistance drift and inherent variability. For filamentary Resistive RAM (ReRAM), one of the most investigated types of memristive devices, the expensive electroforming step required to create conductive pathways results in increased power and area overheads and reduced endurance. In this…
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Memristor technology shows great promise for energy-efficient computing, yet it grapples with challenges like resistance drift and inherent variability. For filamentary Resistive RAM (ReRAM), one of the most investigated types of memristive devices, the expensive electroforming step required to create conductive pathways results in increased power and area overheads and reduced endurance. In this study, we present novel HfO2-based forming-free ReRAM devices, PdNeuRAM, that operate at low voltages, support multi-bit functionality, and display reduced variability. Through a deep understanding and comprehensive material characterization, we discover the key process that allows this unique behavior: a Pd-O-Hf configuration that capitalizes on Pd innate affinity for integrating into HfO2. This structure actively facilitates charge redistribution at room temperature, effectively eliminating the need for electroforming. Moreover, the fabricated ReRAM device provides tunable resistance states for dense memory and reduces programming and reading energy by 43% and 73%, respectively, using spiking neural networks (SNN). This study reveals novel mechanistic insights and delineates a strategic roadmap for the realization of power-efficient and cost-effective ReRAM devices.
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Submitted 28 May, 2025;
originally announced May 2025.
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Stabilization of a polar phase in WO3 thin films by epitaxial strain
Authors:
Ewout van der Veer,
Martin F. Sarott,
Jack T. Eckstein,
Stijn Feringa,
Dennis van der Veen,
Johanna van Gent González,
Majid Ahmadi,
Ellen M. Kiens,
Gertjan Koster,
Bart J. Kooi,
Michael A. Carpenter,
Ekhard K. H. Salje,
Beatriz Noheda
Abstract:
The introduction of new simple oxides that are CMOS-compatible constitutes an important step towards multifunctional oxide electronics. One such oxide, tungsten trioxide (WO3), has raised much interest as an electrode material. Here we reveal the presence of a previously unreported polar phase of WO3, obtained in thin films grown on YAlO3 substrates. The epitaxial strain stabilizes a triclinic pha…
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The introduction of new simple oxides that are CMOS-compatible constitutes an important step towards multifunctional oxide electronics. One such oxide, tungsten trioxide (WO3), has raised much interest as an electrode material. Here we reveal the presence of a previously unreported polar phase of WO3, obtained in thin films grown on YAlO3 substrates. The epitaxial strain stabilizes a triclinic phase, whose unit cell could be fully determined by means of large-scale reciprocal space mapping, rarely reported in thin films.
Unconventional strain accommodation mechanisms enable the triclinic phase to be stabilized up to unexpectedly large film thicknesses. The strain gradients around domain walls and local variations of octahedral tilts, observed by scanning transmission electron microscopy, could explain this behavior.
An in-plane striped domain pattern with needle-like bifurcations is visible in piezoresponse force microscopy maps, evidencing the polar nature of the films. Correspondingly, local modulations of the conductivity of the film are shown by conductive atomic force microscopy and scanning electron microscopy. These results open the possibility for adding functionalities to WO3-based devices by controlling conductivity and epitaxial strain.
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Submitted 16 May, 2025;
originally announced May 2025.
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Atomically resolved phase coexistence in VO2 thin films
Authors:
Masoud Ahmadi,
Atul Atul,
Sytze de Graaf,
Ewout van der Veer,
Ansgar Meise,
Amir Hossein Tavabi,
Marc Heggen,
Rafal E. Dunin-Borkowski,
Majid Ahmadi,
Bart J. Kooi
Abstract:
Concurrent structural and electronic transformations in VO2 thin films are of twofold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real space atomic structure analysis in which also the ox…
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Concurrent structural and electronic transformations in VO2 thin films are of twofold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real space atomic structure analysis in which also the oxygen atomic columns are resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of the strain-stabilized intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) utilizing atomic-resolution electron microscopy. Our approach sets a direct pathway to unravel the structural transitions in wide range of correlated oxides, offering substantial implications for e.g. optoelectronics and ferroelectrics.
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Submitted 30 September, 2023;
originally announced October 2023.
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Ferroelectric PbZr$_{1-x}$Ti$_x$O$_3$ by ethylene glycol-based chemical solution synthesis
Authors:
Ewout van der Veer,
Mónica Acuautla,
Beatriz Noheda
Abstract:
We have investigated a water-stable sol-gel method based on ethylene glycol as a solvent and bridging ligand for the synthesis of ferroelectric lead zirconate titanate in bulk and thin film forms. This method offers lower toxicity of the solvent, higher stability towards atmospheric moisture and a simplified synthetic procedure compared to traditional sol-gel methods. Ceramic pellets of Nb-doped l…
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We have investigated a water-stable sol-gel method based on ethylene glycol as a solvent and bridging ligand for the synthesis of ferroelectric lead zirconate titanate in bulk and thin film forms. This method offers lower toxicity of the solvent, higher stability towards atmospheric moisture and a simplified synthetic procedure compared to traditional sol-gel methods. Ceramic pellets of Nb-doped lead zirconate titanate (PNZT) in the rhombohedral phase were produced with high density and good piezoelectric properties, comparable to those reported in the literature and those found in commercial piezoelectric elements. In addition, a nine-layer thin film stack was fabricated from the same sol by spin coating onto platinized silicon substrates. The films were crack-free and showed a dense perovskite grain structure with a weak (111) orientation. Piezoelectric measurements of the film showed a piezoelectric coefficient comparable to literature values and good stability towards fatigue.
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Submitted 22 July, 2020;
originally announced July 2020.
