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Magnetic field resilient superconducting coplanar waveguide resonators for hybrid cQED experiments
Authors:
J. G. Kroll,
F. Borsoi,
K. L. van der Enden,
W. Uilhoorn,
D. de Jong,
M Quintero-Pérez,
D. J. van Woerkom,
A. Bruno,
S. R. Plissard,
D. Car,
E. P. A. M. Bakkers,
M. C. Cassidy,
L. P. Kouwenhoven
Abstract:
Superconducting coplanar waveguide resonators that can operate in strong magnetic fields are important tools for a variety of high frequency superconducting devices. Magnetic fields degrade resonator performance by creating Abrikosov vortices that cause resistive losses and frequency fluctuations, or suppressing superconductivity entirely. To mitigate these effects we investigate lithographically…
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Superconducting coplanar waveguide resonators that can operate in strong magnetic fields are important tools for a variety of high frequency superconducting devices. Magnetic fields degrade resonator performance by creating Abrikosov vortices that cause resistive losses and frequency fluctuations, or suppressing superconductivity entirely. To mitigate these effects we investigate lithographically defined artificial defects in resonators fabricated from NbTiN superconducting films. We show that by controlling the vortex dynamics the quality factor of resonators in perpendicular magnetic fields can be greatly enhanced. Coupled with the restriction of the device geometry to enhance the superconductors critical field, we demonstrate stable resonances that retain quality factors $\simeq 10^5$ at the single photon power level in perpendicular magnetic fields up to $B_\perp \simeq$ 20 mT and parallel magnetic fields up to $B_\parallel \simeq$ 6 T. We demonstrate the effectiveness of this technique for hybrid systems by integrating an InSb nanowire into a field resilient superconducting resonator, and use it to perform fast charge readout of a gate defined double quantum dot at $B_\parallel =$ 1 T.
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Submitted 11 September, 2018;
originally announced September 2018.
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A graphene transmon operating at 1 T
Authors:
J. G. Kroll,
W. Uilhoorn,
K. L. van der Enden,
D. de Jong,
K. Watanabe,
T. Taniguchi,
S. Goswami,
M. C. Cassidy,
L. P. Kouwenhoven
Abstract:
A superconducting transmon qubit resilient to strong magnetic fields is an important component for proposed topological and hybrid quantum computing (QC) schemes. Transmon qubits consist of a Josephson junction (JJ) shunted by a large capacitance, coupled to a high quality factor superconducting resonator. In conventional transmon devices, the JJ is made from an Al/AlO$_x$/Al tunnel junction which…
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A superconducting transmon qubit resilient to strong magnetic fields is an important component for proposed topological and hybrid quantum computing (QC) schemes. Transmon qubits consist of a Josephson junction (JJ) shunted by a large capacitance, coupled to a high quality factor superconducting resonator. In conventional transmon devices, the JJ is made from an Al/AlO$_x$/Al tunnel junction which ceases operation above the critical magnetic field of Al, 10 mT. Alternative junction technologies are therefore required to push the operation of these qubits into strong magnetic fields. Graphene JJs are one such candidate due to their high quality, ballistic transport and electrically tunable critical current densities. Importantly the monolayer structure of graphene protects the JJ from orbital interference effects that would otherwise inhibit operation at high magnetic field. Here we report the integration of ballistic graphene JJs into microwave frequency superconducting circuits to create the first graphene transmons. The electric tunability allows the characteristic band dispersion of graphene to be resolved via dispersive microwave spectroscopy. We demonstrate that the device is insensitive to the applied field and perform energy level spectroscopy of the transmon at 1 T, more than an order of magnitude higher than previous studies.
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Submitted 28 June, 2018; v1 submitted 27 June, 2018;
originally announced June 2018.
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Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates
Authors:
A. Bruno,
G. de Lange,
S. Asaad,
K. L. van der Enden,
N. K. Langford,
L. DiCarlo
Abstract:
We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface, and deep reactive-ion etching of the substrate to displace the substrate…
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We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface, and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.
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Submitted 13 February, 2015;
originally announced February 2015.
