-
Selecting Alternative Metals for Advanced Interconnects
Authors:
Jean-Philippe Soulié,
Kiroubanand Sankaran,
Benoit Van Troeye,
Alicja Leśniewska,
Olalla Varela Pedreira,
Herman Oprins,
Gilles Delie,
Claudia Fleischmann,
Lizzie Boakes,
Cédric Rolin,
Lars-Åke Ragnarsson,
Kristof Croes,
Seongho Park,
Johan Swerts,
Geoffrey Pourtois,
Zsolt Tőkei,
Christoph Adelmann
Abstract:
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions…
▽ More
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions approach the 10 nm scale, the limitations of conventional Cu dual-damascene metallization are becoming increasingly difficult to overcome, spurring over a decade of focused research into alternative metallization schemes. The selection of alternative metals is a highly complex process, requiring consideration of multiple criteria, including resistivity at reduced dimensions, reliability, thermal performance, process technology readiness, and sustainability. This tutorial introduces the fundamental criteria for benchmarking and selecting alternative metals and reviews the current state of the art in this field. It covers materials nearing adoption in high-volume manufacturing, materials currently under active research, and potential future directions for fundamental study. While early alternatives to Cu metallization have recently been introduced in commercial CMOS devices, the search for the optimal interconnect metal remains ongoing.
△ Less
Submitted 1 October, 2024; v1 submitted 13 June, 2024;
originally announced June 2024.
-
Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Authors:
Riccardo Torsi,
Kyle T. Munson,
Rahul Pendurthi,
Esteban A. Marques,
Benoit Van Troeye,
Lysander Huberich,
Bruno Schuler,
Maxwell A. Feidler,
Ke Wang,
Geoffrey Pourtois,
Saptarshi Das,
John B. Asbury,
Yu-Chuan Lin,
Joshua A. Robinson
Abstract:
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisi…
▽ More
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10x. Ab initio models indicate the free-energy of sulfur-vacancy formation is increased along the MoS2 growth-front when Re is introduced, resulting in an improved stoichiometry. Remarkably, defect photoluminescence (PL) commonly seen in as-grown MOCVD MoS2 is suppressed by 6x at 0.05 atomic percent (at.%) Re and completely quenched with 1 at.% Re. Furthermore, Re-MoS2 transistors exhibit up to 8x higher drain current and enhanced mobility compared to undoped MoS2 because of the improved material quality. This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.
△ Less
Submitted 31 January, 2023;
originally announced February 2023.
-
Electronic localization in small-angle twisted bilayer graphene
Authors:
V. Hung Nguyen,
D. Paszko,
M. Lamparski,
B. Van Troeye,
V. Meunier,
J. -C. Charlier
Abstract:
Close to a magical angle, twisted bilayer graphene (TBLG) systems exhibit isolated flat electronic bands and, accordingly, strong electron localization. TBLGs have hence been ideal platforms to explore superconductivity, correlated insulating states, magnetism, and quantized anomalous Hall states in reduced dimension. Below a threshold twist angle ($\sim$ $1.1^\circ$), the TBLG superlattice underg…
▽ More
Close to a magical angle, twisted bilayer graphene (TBLG) systems exhibit isolated flat electronic bands and, accordingly, strong electron localization. TBLGs have hence been ideal platforms to explore superconductivity, correlated insulating states, magnetism, and quantized anomalous Hall states in reduced dimension. Below a threshold twist angle ($\sim$ $1.1^\circ$), the TBLG superlattice undergoes lattice reconstruction, leading to a periodic moiré structure which presents a marked atomic corrugation. Using a tight-binding framework, this research demonstrates that superlattice reconstruction affects significantly the electronic structure of small-angle TBLGs. The first magic angle at $\sim$ $1.1^\circ$ is found to be a critical case presenting globally maximized electron localization, thus separating reconstructed TBLGs into two classes with clearly distinct electronic properties. While low-energy Dirac fermions are still preserved at large twist angles $> 1.1 ^\circ$, small-angle ($\lesssim 1.1^\circ$) TBLG systems present common features such as large spatial variation and strong electron localization observed in unfavorable AA stacking regions. However, for small twist angles below $1.1 ^\circ$, the relative contribution of the local AA regions is progressively reduced, thus precluding the emergence of further magic angles, in very good agreement with existing experimental evidence.
△ Less
Submitted 8 May, 2021; v1 submitted 10 February, 2021;
originally announced February 2021.
-
Machine-learning models for Raman spectra analysis of twisted bilayer graphene
Authors:
Natalya Sheremetyeva,
Michael Lamparski,
Colin Daniels,
Benoit Van Troeye,
Vincent Meunier
Abstract:
The vibrational properties of twisted bilayer graphene (tBLG) show complex features, due to the intricate energy landscape of its low-symmetry configurations. A machine learning-based approach is developed to provide a continuous model between the twist angle and the simulated Raman spectra of tBLGs. Extracting the structural information of the twist angle from Raman spectra corresponds to solving…
▽ More
The vibrational properties of twisted bilayer graphene (tBLG) show complex features, due to the intricate energy landscape of its low-symmetry configurations. A machine learning-based approach is developed to provide a continuous model between the twist angle and the simulated Raman spectra of tBLGs. Extracting the structural information of the twist angle from Raman spectra corresponds to solving a complicated inverse problem. Once trained, the machine learning regressors (MLRs) quickly provide predictions without human bias and with an average of 98% of the data variance being explained by the model. The significant spectral features learned by MLRs are analyzed revealing the intensity profile near the calculated G-band to be the most important feature. The trained models are tested on noise-containing test data demonstrating their robustness. The transferability of the present models to experimental Raman spectra is discussed in the context of validation of the level of theory used for the construction of the analyzed database. This work serves as a proof of concept that machine-learning analysis is a potentially powerful tool for interpretation of Raman spectra of tBLG and other 2D materials.
△ Less
Submitted 7 July, 2020;
originally announced July 2020.
-
Lattice dynamics localization in low-angle twisted bilayer graphene
Authors:
Andreij C. Gadelha,
Douglas A. A. Ohlberg,
Cassiano Rabelo,
Eliel G. S. Neto,
Thiago L. Vasconcelos,
João L. Campos,
Jessica S. Lemos,
Vinícius Ornelas,
Daniel Miranda,
Rafael Nadas,
Fabiano C. Santana,
Kenji Watanabe,
Takashi Taniguchi,
Benoit van Troeye,
Michael Lamparski,
Vincent Meunier,
Viet-Hung Nguyen,
Dawid Paszko,
Jean-Christophe Charlier,
Leonardo C. Campos,
Luiz G. Cançado,
Gilberto Medeiros-Ribeiro,
Ado Jorio
Abstract:
A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new rules for electron-phonon coupling and the eventual observation of strong correlation and superconductivity. Direct optical images of the crystal supe…
▽ More
A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new rules for electron-phonon coupling and the eventual observation of strong correlation and superconductivity. Direct optical images of the crystal superlattice in reconstructed twisted bilayer graphene are reported here, generated by the inelastic scattering of light in a nano-Raman spectroscope. The observation of the crystallographic structure with visible light is made possible due to lattice dynamics localization, the images resembling spectral variations caused by the presence of strain solitons and topological points. The results are rationalized by a nearly-free-phonon model and electronic calculations that highlight the relevance of solitons and topological points, particularly pronounced for structures with small twist angles. We anticipate our discovery to play a role in understanding Jahn-Teller effects and electronic Cooper pairing, among many other important phonon-related effects, and it may be useful for characterizing devices in the most prominent platform for the field of twistronics.
△ Less
Submitted 16 June, 2020;
originally announced June 2020.
-
Soliton signature in the phonon spectrum of twisted bilayer graphene
Authors:
Michael Lamparski,
Benoit Van Troeye,
Vincent Meunier
Abstract:
The phonon spectra of twisted bilayer graphene (tBLG) are analyzed for a series of 692 twisting angle values in the $[0,30{\degree}]$ range. The evolution of the phonon bandstructure as a function of twist angle is examined using a band unfolding scheme where the large number of phonon modes computed at the $Γ$ point for the large moiré tBLG supercells are unfolded onto the Brillouin Zone (BZ) of…
▽ More
The phonon spectra of twisted bilayer graphene (tBLG) are analyzed for a series of 692 twisting angle values in the $[0,30{\degree}]$ range. The evolution of the phonon bandstructure as a function of twist angle is examined using a band unfolding scheme where the large number of phonon modes computed at the $Γ$ point for the large moiré tBLG supercells are unfolded onto the Brillouin Zone (BZ) of one of the two constituent layers. In addition to changes to the low-frequency breathing and shear modes, a series of well-defined side-bands around high-symmetry points of the extended BZ emerge due to the twist angle-dependent structural relaxation. The results are rationalized by introducing a nearly-free-phonon model that highlights the central role played by solitons in the description of the new phonon branches, which are particularly pronounced for structures with small twist angles, below a buckling angle $θ_{\rm B}\sim {3.75}{\degree}$.
△ Less
Submitted 28 December, 2019;
originally announced December 2019.
-
First-principles prediction of lattice coherency in van der Waals heterostructures
Authors:
Benoit Van Troeye,
Aurélien Lherbier,
Simon M. -M. Dubois,
Jean-Christophe Charlier,
Xavier Gonze
Abstract:
The emergence of superconductivity in slightly-misaligned graphene bilayer [1] and moiré excitons in MoSe$_2$-WSe$_2$ van der Waals (vdW) heterostructures [2] is intimately related to the formation of a 2D superlattice in those systems. At variance, perfect primitive lattice matching of the constituent layers has also been reported in some vdW-heterostructures [3-5], highlighting the richness of i…
▽ More
The emergence of superconductivity in slightly-misaligned graphene bilayer [1] and moiré excitons in MoSe$_2$-WSe$_2$ van der Waals (vdW) heterostructures [2] is intimately related to the formation of a 2D superlattice in those systems. At variance, perfect primitive lattice matching of the constituent layers has also been reported in some vdW-heterostructures [3-5], highlighting the richness of interfaces in the 2D world. In this work, the determination of the nature of such interface, from first principles, is demonstrated. To do so, an extension of the Frenkel-Kontorova (FK) model [6] is presented, linked to first-principles calculations, and used to predict lattice coherency for a set of 56 vdW-heterostructures. Computational predictions agree with experiments, when available. New superlattices as well as perfectly-matching interfaces are predicted.
△ Less
Submitted 15 November, 2019;
originally announced November 2019.
-
Vibrational and dielectric properties of monolayer transition metal dichalcogenides
Authors:
Nicholas A. Pike,
Antoine Dewandre,
Benoit Van Troeye,
Xavier Gonze,
Matthieu J. Verstraete
Abstract:
First-principles studies of two-dimensional transition metal dichalcogenides have contributed considerably to the understanding of their dielectric, optical, elastic, and vibrational properties. The majority of works to date focus on a single material or physical property. Here we use a single first-principles methodology on the whole family of systems, to investigate in depth the relationships be…
▽ More
First-principles studies of two-dimensional transition metal dichalcogenides have contributed considerably to the understanding of their dielectric, optical, elastic, and vibrational properties. The majority of works to date focus on a single material or physical property. Here we use a single first-principles methodology on the whole family of systems, to investigate in depth the relationships between different physical properties, the underlying symmetry and the composition of these materials, and observe trends. We compare to bulk counterparts to show strong interlayer effects in triclinic compounds. Previously unobserved relationships between these monolayer compounds become apparent. These trends can then be exploited by the materials science, nanoscience, and chemistry communities to better design devices and heterostructures for specific functionalities.
△ Less
Submitted 25 March, 2019;
originally announced March 2019.
-
Vibrational and dielectric properties of the bulk transition metal dichalcogenides
Authors:
Nicholas A. Pike,
Antoine Dewandre,
Benoit Van Troeye,
Xavier Gonze,
Matthieu J. Verstraete
Abstract:
Interest in the bulk transition metal dichalcogenides for their electronic, photovoltaic, and optical properties has grown and led to their use in many technological applications. We present a systematic investigation of their interlinked vibrational and dielectric properties, using density functional theory and density functional perturbation theory, studying the effects of the spin-orbit interac…
▽ More
Interest in the bulk transition metal dichalcogenides for their electronic, photovoltaic, and optical properties has grown and led to their use in many technological applications. We present a systematic investigation of their interlinked vibrational and dielectric properties, using density functional theory and density functional perturbation theory, studying the effects of the spin-orbit interaction and of the long-range e$^-$- e$^-$ correlation as part of our investigation. This study confirms that the spin-orbit interaction plays a small role in these physical properties, while the direct contribution of dispersion corrections is of crucial importance in the description of the interatomic force constants. Here, our analysis of the structural and vibrational properties, including the Raman spectra, compare well to experimental measurement. Three materials with different point groups are showcased and data trends on the full set of fifteen existing hexagonal, trigonal, and triclinic materials are demonstrated. This overall picture will enable the modeling of devices composed of these materials for novel applications.
△ Less
Submitted 6 April, 2018;
originally announced April 2018.
-
First-principle study of paraelectric and ferroelectric CsH$_2$PO$_4$ including dispersion forces: stability and related vibrational, dielectric and elastic properties
Authors:
Benoit Van Troeye,
Michiel Jan van Setten,
Matteo Giantomassi,
Marc Torrent,
Gian-Marco Rignanese,
Xavier Gonze
Abstract:
Using density functional theory (DFT) and density functional perturbation theory (DFPT), we investigate the stability and response functions of CsH$_2$PO$_4$, a ferroelectric material at low temperature. This material cannot be described properly by the usual (semi-)local approximations within DFT. The long-range e$^-$-e$^-$ correlation needs to be properly taken into account, using, for instance,…
▽ More
Using density functional theory (DFT) and density functional perturbation theory (DFPT), we investigate the stability and response functions of CsH$_2$PO$_4$, a ferroelectric material at low temperature. This material cannot be described properly by the usual (semi-)local approximations within DFT. The long-range e$^-$-e$^-$ correlation needs to be properly taken into account, using, for instance, Grimme's DFT-D methods, as investigated in this work. We find that DFT-D3(BJ) performs the best for the members of the dihydrogenated alkali phosphate family (KH$_2$PO$_4$, RbH$_2$PO$_4$, CsH$_2$PO$_4$), leading to experimental lattice parameters reproduced with an average deviation of 0.5 %. With these DFT-D methods, the structural, dielectric, vibrational and mechanical properties of CsH$_2$PO$_4$ are globally in excellent agreement with the available experiments ($<$ 2% MAPE for Raman-active phonons). Our study suggests the possible existence of a new low-temperature phase for CsH$_2$PO$_4$, not yet reported experimentally. Finally, we report the implementation of DFT-D contributions to elastic constants within DFPT.
△ Less
Submitted 26 January, 2018;
originally announced January 2018.
-
Interatomic force constants including the DFT-D dispersion contribution
Authors:
Benoit Van Troeye,
Marc Torrent,
Xavier Gonze
Abstract:
Grimme's DFT-D dispersion contribution to interatomic forces constants, required for the computation of the phonon band structures in density-functional perturbation theory, has been derived analytically. The implementation has then been validated with respect to frozen phonons, and applied on materials where weak cohesive forces play a major role i.e. argon, graphite, benzene. We show that these…
▽ More
Grimme's DFT-D dispersion contribution to interatomic forces constants, required for the computation of the phonon band structures in density-functional perturbation theory, has been derived analytically. The implementation has then been validated with respect to frozen phonons, and applied on materials where weak cohesive forces play a major role i.e. argon, graphite, benzene. We show that these dispersive contributions have to be considered to properly reproduce the experimental vibrational properties of these materials, although the lattice parameter change, coming from the ground-state relaxation with the proper functional, induces the most important change with respect to a treatment without dispersion corrections. In the current implementation, the contribution of these dispersion corrections to the dynamical matrices (with a number of elements that is proportional to the square of the number of atoms) has only a cubic scaling with the number of atoms. In practice the overload with respect to density-functional calculations is small, making this methodology promising to study vibrational properties of large dispersive systems.
△ Less
Submitted 26 January, 2018;
originally announced January 2018.
-
Large phosphorene in-plane contraction induced by interlayer interactions in graphene-phosphorene heterostructures
Authors:
Benoit Van Troeye,
Aurélien Lherbier,
Jean-Christophe Charlier,
Xavier Gonze
Abstract:
Intralayer deformation in van der Waals (vdW) heterostructures is generally assumed to be negligible due to the weak nature of the interactions between the layers, especially when the interfaces are found incoherent. In the present work, graphene-phosphorene vdW-heterostructures are investigated with the Density Functional Theory (DFT). The challenge of treating nearly incommensurate (very large)…
▽ More
Intralayer deformation in van der Waals (vdW) heterostructures is generally assumed to be negligible due to the weak nature of the interactions between the layers, especially when the interfaces are found incoherent. In the present work, graphene-phosphorene vdW-heterostructures are investigated with the Density Functional Theory (DFT). The challenge of treating nearly incommensurate (very large) supercell in DFT is bypassed by considering different energetic quantities in the grand canonical ensemble, alternative to the formation energy, in order to take into account the mismatch elastic contribution of the different layers. In the investigated heterostructures, it is found that phosphorene contracts by ~4% in the armchair direction when compared to its free-standing form. This large contraction leads to important changes in term of electronic properties, with the direct electronic optical transition of phosphorene becoming indirect in specific vdW-heterostructures. More generally, such a contraction indicates strong substrate effects in supported or encapsulated phosphorene -neglected hitherto- and paves the way to substrate-controlled stress- tronic in such 2D crystal. In addition, the stability of these vdW-heterostructures are investigated as a function of the rotation angle between the layers and as a function of the stacking composition. The alignment of the specific crystalline directions of graphene and phosphorene is found energetically favored. In parallel, several several models based on DFT-estimated quantities are presented; they allow notably a better understanding of the global mutual accommodation of 2D materials in their corresponding interfaces, that is predicted to be non-negligible even in the case of incommensurate interfaces.
△ Less
Submitted 23 January, 2018;
originally announced January 2018.
-
Origin of the Counterintuitive Dynamic Charge in the Transition-Metal Dichalcogenides
Authors:
Nicholas A. Pike,
Benoit Van Troeye,
Antoine Dewandre,
Xavier Gonze,
Matthieu J. Verstraete
Abstract:
We investigate the chemical bonding characteristics of the transition metal dichalcogenides based on their static and dynamical atomic charges within Density Functional Theory. The dynamical charges of the trigonal transition metal dichalcogenides are anomalously large, while in their hexagonal counterparts, their sign is even counterintuitive i.e. the transition metal takes the negative charge. T…
▽ More
We investigate the chemical bonding characteristics of the transition metal dichalcogenides based on their static and dynamical atomic charges within Density Functional Theory. The dynamical charges of the trigonal transition metal dichalcogenides are anomalously large, while in their hexagonal counterparts, their sign is even counterintuitive i.e. the transition metal takes the negative charge. This phenomenon cannot be understood simply in terms of a change in the static atomic charge as it results from a local change of polarization. We present our theoretical understanding of these phenomena based on the perturbative response of the system to a static electric field and by investigating the hybridization of the molecular orbitals near the Fermi level. Furthermore, we establish a link between the sign of the Born effective charge and the $π$-backbonding in organic chemistry and propose an experimental procedure to verify the calculated sign of the dynamical charge in the transition metal dichalcogenides.
△ Less
Submitted 12 February, 2017; v1 submitted 6 January, 2017;
originally announced January 2017.
