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Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
Authors:
David van Treeck,
Jonas Lähnemann,
Guanhui Gao,
Sergio Fernández Garrido,
Oliver Brandt,
Lutz Geelhaar
Abstract:
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each constituent atomic species, i.e. Ga, In, and N, is deposited subsequently from the same direction by rotating the sample and operating the shutters accord…
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Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each constituent atomic species, i.e. Ga, In, and N, is deposited subsequently from the same direction by rotating the sample and operating the shutters accordingly. Using multiple iterations of this process, we achieve the growth of homogeneous shells on a single side facet of the nanowires. For higher In content and thus lattice mismatch, we observe a strain-induced bending of the nanowire heterostructures. The incorporation of In and the resulting emission spectra are systematically investigated as a function of both the growth temperature and the In/Ga flux ratio.
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Submitted 1 September, 2023; v1 submitted 20 July, 2023;
originally announced July 2023.
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Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range
Authors:
David van Treeck,
Jonas Lähnemann,
Oliver Brandt,
Lutz Geelhaar
Abstract:
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a qualitative shell growth model accounting for both the three-dimensional nature of the nanostructures as well as the directionality of the atomic fluxes. T…
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Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a qualitative shell growth model accounting for both the three-dimensional nature of the nanostructures as well as the directionality of the atomic fluxes. This model allows us, on the one hand, to optimise the conditions for high and homogeneous In incorporation and, on the other hand, to explain the influence of changes in the growth conditions on the sample morphology and In content. Specifically, the impact of the V/III and In/Ga flux ratios, the rotation speed and the rotation direction are investigated. Notably, with In acting as surfactant, the ternary (In,Ga)N shells are much more homogeneous in thickness along the NW length than their binary GaN counterparts.
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Submitted 18 August, 2023; v1 submitted 22 June, 2023;
originally announced June 2023.
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X-ray scattering study of GaN nanowires grown on Ti/Al$_{2}$O$_{3}$ by molecular beam epitaxy
Authors:
Vladimir M. Kaganer,
Oleg V. Konovalov,
Gabriele Calabrese,
David van Treeck,
Albert Kwasniewski,
Carsten Richter,
Sergio Fernández-Garrido,
Oliver Brandt
Abstract:
GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at grazing incidence, reveals Ti, Ti$_{3}$O, Ti$_{3}$Al, and TiO$_x$N$_y$ crystallites with in-plane and out-of-plane lattice parameters intermediate bet…
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GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at grazing incidence, reveals Ti, Ti$_{3}$O, Ti$_{3}$Al, and TiO$_x$N$_y$ crystallites with in-plane and out-of-plane lattice parameters intermediate between those of Al$_{2}$O$_{3}$ and GaN. These topotaxial crystallites in Ti film, formed due to interfacial reactions and N exposure, possess fairly little misorientation with respect to Al$_{2}$O$_{3}$. As a result, GaN NWs grow on the top TiN layer possessing a high degree of epitaxial orientation with respect to the substrate. The measured GISAXS intensity distributions are modeled by the Monte Carlo method taking into account the orientational distributions of NWs, a variety of their cross-sectional shapes and sizes, and roughness of their side facets. The cross-sectional size distributions of the NWs and the relative fractions of $(1\bar{1}00)$ and $(11\bar{2}0)$ side facets are determined.
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Submitted 11 July, 2022;
originally announced July 2022.
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Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires
Authors:
G. Calabrese,
D. van Treeck,
V. M. Kaganer,
O. Konovalov,
P. Corfdir,
C. Sinito,
L. Geelhaar,
O. Brandt,
S. Fernández-Garrido
Abstract:
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction profiles reveal the presence of a homogeneous tensile strain in the out-of-plane direction. This strain is inversely proportional to the…
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We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction profiles reveal the presence of a homogeneous tensile strain in the out-of-plane direction. This strain is inversely proportional to the average nanowire radius and results from the surface stress acting on the nanowire sidewalls. The superposition of strain from nanowires with different radii in the same ensemble results in a broadening of the Bragg peaks that mimics an inhomogeneous strain on a macroscopic scale. The nanowire ensembles show a small blueshift of the bound-exciton transitions in photoluminescence spectra, reflecting the existence of a compensating in-plane compressive strain, as further supported by grazing incidence x-ray diffraction measurements carried out at a synchrotron. By combining X-ray diffraction and photoluminescence spectroscopy, the surface stress components $f_{x}$ and $f_{z}$ of the air-exposed GaN$\{1\bar100\}$ planes that constitute the nanowire sidewalls are determined experimentally to be 2.25 and $-0.7$~N/m, respectively.
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Submitted 22 February, 2020;
originally announced February 2020.
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Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
Authors:
David van Treeck,
Johannes Ledig,
Gregor Scholz,
Jonas Lähnemann,
Mattia Musolino,
Abbes Tahraoui,
Oliver Brandt,
Andreas Waag,
Henning Riechert,
Lutz Geelhaar
Abstract:
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single…
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We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I-V characteristics are described well by the modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool.
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Submitted 23 August, 2019;
originally announced August 2019.
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Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy
Authors:
David van Treeck,
Sergio Fernández-Garrido,
Lutz Geelhaar
Abstract:
In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire (NW) core-shell structures. In particular, we study the shell growth of GaN around GaN template NWs under the boundary condition that Ga and N do not impinge on a given sidewall facet at the same time. Our experiments w…
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In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire (NW) core-shell structures. In particular, we study the shell growth of GaN around GaN template NWs under the boundary condition that Ga and N do not impinge on a given sidewall facet at the same time. Our experiments with different V/III ratios and substrate temperatures show that obtaining shells with homogeneous thickness along the whole NW length is not straightforward. Analyzing in detail the shell morphology with and without substrate rotation, we find that the different azimuthal angles of the sources have a major impact on the Ga adatom kinetics and the final shell morphology. On the basis of these experimental results, we develop a diffusion model which takes into account different NW facets and the substrate. The model allows to describe well the experimental shell profiles and predicts that homogeneous shell growth can be achieved if the Ga and N source are arranged next to each other or for very high rotation speeds. Moreover, the modeling reveals that the growth on a given side facet can be categorized within one rotation in four different phases: the Ga wetting phase, the metal-rich growth phase, the N-rich growth phase, and the dissociation phase. The striking difference to growth processes on planar samples is that, in our case, diffusion takes place between different regions, i.e. the sidewall vs. the top facet and substrate, out of which on one N impinges not continuously, resulting in complex gradients in chemical potential that are modulated in time by substrate rotation. The comprehensiveness of our model provides a deep understanding of diffusion processes and the resulting adatom concentration, and could be applied to other 3D structures and material systems
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Submitted 13 December, 2019; v1 submitted 24 July, 2019;
originally announced July 2019.
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Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films
Authors:
David van Treeck,
Gabriele Calabrese,
Jelle J. W. Goertz,
Vladimir M. Kaganer,
Oliver Brandt,
Sergio Fernández-Garrido,
Lutz Geelhaar
Abstract:
We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not suffer from coalescence, which is in contrast to the growth on Si and other substrates. Only beyond a certain nanowire length that depends on the nanowire number…
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We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not suffer from coalescence, which is in contrast to the growth on Si and other substrates. Only beyond a certain nanowire length that depends on the nanowire number density and exceeds here 1.5 μm, coalescence takes place by bundling, i.e. the same process as on Si. By analyzing the nearest neighbor distance distribution, we identify diffusion-induced repulsion of neighboring nanowires as the main mechanism limiting the nanowire number density during nucleation on TiN. Since on Si the final number density is determined by shadowing of the impinging molecular beams by existing nanowires, it is the difference in adatom surface diffusion that enables on TiN the formation of nanowire ensembles with reduced number density. These nanowire ensembles combine properties that make them a promising basis for the growth of core-shell heterostructures.
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Submitted 9 January, 2018;
originally announced January 2018.
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A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
Authors:
M. Musolino,
D. van Treeck,
A. Tahraoui,
L. Scarparo,
C. De Santi,
M. Meneghini,
E. Zanoni,
L. Geelhaar,
H. Riechert
Abstract:
We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the prese…
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We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of $570\pm20$ and $840\pm30$ meV below the conduction band minimum. The physical origin of these deep level states is discussed. The temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.
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Submitted 11 November, 2015;
originally announced November 2015.
