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DNP-NMR of surface hydrogen on silicon microparticles
Authors:
Daphna Shimon,
Kipp J. van Schooten,
Subhradip Paul,
Zaili Peng,
Susumu Takahashi,
Walter Köckenberger,
Chandrasekhar Ramanathan
Abstract:
Dynamic nuclear polarization (DNP) enhanced nuclear magnetic resonance (NMR) offers a promising route to studying local atomic environments at the surface of both crystalline and amorphous materials. We take advantage of unpaired electrons due to defects close to the surface of the silicon microparticles to hyperpolarize adjacent $^{1}$H nuclei. At 3.3 T and 4.2 K, we observe the presence of two p…
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Dynamic nuclear polarization (DNP) enhanced nuclear magnetic resonance (NMR) offers a promising route to studying local atomic environments at the surface of both crystalline and amorphous materials. We take advantage of unpaired electrons due to defects close to the surface of the silicon microparticles to hyperpolarize adjacent $^{1}$H nuclei. At 3.3 T and 4.2 K, we observe the presence of two proton peaks, each with a linewidth on the order of 5 kHz. Echo experiments indicate a homogeneous linewidth of $\sim 150-300$ Hz for both peaks, indicative of a sparse distribution of protons in both environments. The downfield peak at 10 ppm lies within the typical chemical shift range for proton NMR, and was found to be relatively stable over repeated measurements. The upfield peak was found to vary in position between -19 and -37 ppm, well outside the range of typical proton NMR shifts, and indicative of a high-degree of chemical shielding. The upfield peak was also found to vary significantly in intensity across different experimental runs, suggesting a weakly-bound species. These results suggest that the hydrogen is located in two distinct microscopic environments on the surface of these Si particles.
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Submitted 9 April, 2019; v1 submitted 25 January, 2019;
originally announced January 2019.
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Electric-field quenching of optically detected magnetic resonance in a $π$-conjugated polymer
Authors:
D. L. Baird,
A. Nahlawi,
K. Crossley,
K. J. van Schooten,
M. Y. Teferi,
H. Popli,
G. Joshi,
S. Jamali,
H. Malissa,
J. M. Lupton,
C. Boehme
Abstract:
Electric fields are central to the operation of optoelectronic devices based on conjugated polymers since they drive the recombination of electrons and holes to excitons in organic light-emitting diodes but are also responsible for the dissociation of excitons in solar cells. One way to track the microscopic effect of electric fields on charge carriers formed under illumination of a polymer film i…
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Electric fields are central to the operation of optoelectronic devices based on conjugated polymers since they drive the recombination of electrons and holes to excitons in organic light-emitting diodes but are also responsible for the dissociation of excitons in solar cells. One way to track the microscopic effect of electric fields on charge carriers formed under illumination of a polymer film is to exploit the fluorescence arising from delayed recombination of carrier pairs, a process which is fundamentally spin dependent. Such spin-dependent recombination can be probed directly in fluorescence, by optically detected magnetic resonance (ODMR). Depending on the relative orientation, an electric field may either dissociate or stabilize an electron-hole carrier pair. We find that the ODMR signal in a polymer film is quenched in an electric field, but that, at fields exceeding 1 MV/cm, this quenching saturates. This finding contrasts the complete ODMR suppression that was previously observed in polymeric photodiodes, indicating that exciton-charge interactions---analogous to Auger recombination in crystalline semiconductors---may constitute the dominant carrier-pair dissociation process in organic electronics.
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Submitted 11 June, 2018;
originally announced June 2018.
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Chemisorption of water on the surface of silicon microparticles measured by DNP-enhanced NMR
Authors:
Mallory L. Guy,
Kipp J. van Schooten,
Lihuang Zhu,
Chandrasekhar Ramanathan
Abstract:
We use dynamic nuclear polarization (DNP) enhanced nuclear magnetic resonance (NMR) at liquid helium temperatures to directly detect hydrogen attached to the surface of silicon microparticles. The proton NMR spectrum from a dry sample of polycrystalline silicon powder (1-5 $μ$m) shows a distinctively narrow Lorentzian-shaped resonance with a width of 6.2 kHz, indicative of a very sparse distributi…
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We use dynamic nuclear polarization (DNP) enhanced nuclear magnetic resonance (NMR) at liquid helium temperatures to directly detect hydrogen attached to the surface of silicon microparticles. The proton NMR spectrum from a dry sample of polycrystalline silicon powder (1-5 $μ$m) shows a distinctively narrow Lorentzian-shaped resonance with a width of 6.2 kHz, indicative of a very sparse distribution of protons attached to the silicon surface. These protons are within a few atomic monolayers of the silicon surface. The high sensitivity NMR detection of surface protons from low surface area ($0.26 - 1.3 \: m^2/g$) particles is enabled by an overall signal enhancement of 4150 over the room temperature NMR signal at the same field. When the particles were suspended in a solvent with 80% H2O and 20% D2O, the narrow peak was observed to grow in intensity over time, indicating growth of the sparse surface proton layer. However, when the particles were suspended in a solvent with 20% H2O and 80% D2O, the narrow bound-proton peak was observed to shrink due to exchange between the surface protons and the deuterium in solution. This decrease was accompanied by a concomitant growth in the intensity of the frozen solvent peak, as the relative proton concentration of the solvent increased. When the particles were suspended in the organic solvent hexane, the proton NMR spectra remained unchanged over time. These results are consistent with the known chemisorption of water on the silicon surface resulting in the formation of hydride and hydroxyl species. Low-temperature DNP NMR can thus be used as a non-destructive probe of surface corrosion for silicon in aqueous environments. This is important in the context of using silicon MEMS and bioMEMS devices in such environments, for silicon micro- and nano-particle MRI imaging agents, and the use of nanosilicon for splitting water in fuel cells.
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Submitted 20 October, 2016;
originally announced October 2016.
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Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film
Authors:
Dali Sun,
Christopher M. Kareis,
Kipp J. van Schooten,
Wei Jiang,
Gene Siegel,
Marzieh Kavand,
Royce A. Davidson,
William W. Shum,
Chuang Zhang,
Ashutosh Tiwari,
Christoph Boehme,
Feng Liu,
Peter W. Stephens,
Joel S. Miller,
Z. Valy Vardeny
Abstract:
Organic semiconductors find increasing importance in spin transport devices due to the modulation and control of their properties through chemical synthetic versatility. The organic materials are used as interlayers between two ferromagnet (FM) electrodes in organic spin valves (OSV), as well as for magnetic spin manipulation of metal-organic complexes at the molecular level. In the latter, specif…
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Organic semiconductors find increasing importance in spin transport devices due to the modulation and control of their properties through chemical synthetic versatility. The organic materials are used as interlayers between two ferromagnet (FM) electrodes in organic spin valves (OSV), as well as for magnetic spin manipulation of metal-organic complexes at the molecular level. In the latter, specifically, the substrate-induced magnetic switching in a paramagnetic molecule has been evoked extensively, but studied by delicate surface spectroscopies. Here we present evidence of the substantial magnetic switching in a nanosized thin film of the paramagnetic molecule, tris(8-hydroxyquinoline)iron(III) (Feq3) deposited on a FM substrate, using the magnetoresistance response of electrical spin-injection in an OSV structure, and the inverse-spin-Hall effect induced by state-of-art pulsed microwave spin-pumping. We show that interfacial spin control at the molecular level may lead to a macroscopic organic spin transport device, thus, bridging the gap between organic spintronics and molecular spintronics.
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Submitted 18 September, 2016;
originally announced September 2016.
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Optical dependence of electrically-detected magnetic resonance in lightly-doped Si:P devices
Authors:
Lihuang Zhu,
Kipp J. van Schooten,
Mallory. L. Guy,
Chandrasekhar Ramanathan
Abstract:
Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are coupled to interfacial defect spins near the Si/SiO$_2$ interface. To prevent ionization of the donors, the experiments are performed at cryogenic temperatures and…
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Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are coupled to interfacial defect spins near the Si/SiO$_2$ interface. To prevent ionization of the donors, the experiments are performed at cryogenic temperatures and the mobile charge carriers needed are generated via optical excitation. The influence of this optical excitation on the SDR process and the resulting EDMR signal is still not well understood. Here, we use EDMR to characterize changes to both phosphorus and defect spin readout as a function of optical excitation using: a 980 nm laser with energy just above the silicon band edge at cryogenic temperatures; a 405 nm laser to generate hot surface-carriers; and a broadband white light source. EDMR signals are observed from the phosphorus donor and two distinct defect species in all the experiments. With near-infrared excitation, we find that the EDMR signal primarily arises from donor-defect pairs, while at higher photon energies there are significant additional contributions from defect-defect pairs. The optical penetration depth into silicon is also known to be strongly wavelength dependent at cryogenic temperatures. The energy of the optical excitation is observed to strongly modulate the kinetics of the SDR process. Careful tuning of the optical photon energy could therefore be used to control both the subset of spin pairs contributing to the EDMR signal as well as the dynamics of the SDR process.
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Submitted 21 March, 2017; v1 submitted 15 August, 2016;
originally announced August 2016.
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Spintronics of Organometal Trihalide Perovskites
Authors:
Dali Sun,
Chuang Zhang,
Marzieh Kavand,
Kipp J. van Schooten,
Hans Malissa,
Matthew Groesbeck,
Ryan McLaughlin,
Christoph Boehme,
Z. Valy Vardeny
Abstract:
The family of organometal trihalide perovskite (OTP), CH3NH3PbX3 (where X is halogen) has recently revolutionized the photovoltaics field and shows promise in a variety of optoelectronic applications. The characteristic spin properties of charge and neutral excitations in OTPs are influenced by the large spin-orbit coupling of the Pb atoms, which may lead to spin-based device applications. Here we…
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The family of organometal trihalide perovskite (OTP), CH3NH3PbX3 (where X is halogen) has recently revolutionized the photovoltaics field and shows promise in a variety of optoelectronic applications. The characteristic spin properties of charge and neutral excitations in OTPs are influenced by the large spin-orbit coupling of the Pb atoms, which may lead to spin-based device applications. Here we report the first studies of pure spin-current and spin-aligned carrier injection in OTP spintronics devices using spin-pumping and spin-injection, respectively. We measure a relatively large inverse-spin-Hall effect using pulsed microwave excitation in OTP devices at resonance with a ferromagnetic substrate, from which we derive room temperature spin diffusion length, lambda_sd~9nm; and low-temperature giant magnetoresistance in OTP-based spin-valves from which we estimate lambda_sd~85nm.
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Submitted 2 August, 2016;
originally announced August 2016.
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Morphology effects on spin-dependent transport and recombination in polyfluorene thin films
Authors:
Richards Miller,
K. J. van Schooten,
H. Malissa,
G. Joshi,
S. Jamali,
J. M. Lupton,
C. Boehme
Abstract:
We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by conducting continuous wave (c.w.) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and 293 K using microwave frequencies between about 100 MHz and 20 GHz as well as pulsed EDMR at X-band. Variable frequency EDMR allows us to establish the role of spin-or…
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We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by conducting continuous wave (c.w.) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and 293 K using microwave frequencies between about 100 MHz and 20 GHz as well as pulsed EDMR at X-band. Variable frequency EDMR allows us to establish the role of spin-orbit coupling in spin-dependent processes, pulsed EDMR probes coherent spin motion effects. We used PFO for this study in order to allow for the investigation of the effects of microscopic morphological ordering since this material can adopt two distinct intrachain morphologies: an amorphous (glassy) phase, and an ordered (beta) phase. In thin films of organic light-emitting diodes (OLEDs) the appearance of a particular phase can be controlled by deposition parameters, and is verified by electroluminescence spectroscopy. We conducted multi-frequency c.w. EDMR, electrically detected Rabi spinbeat experiments, Hahn-echo and inversion-recovery measurements. Coherent echo spectroscopy reveals electrically detected electron spin-echo envelope modulation (ESEEM) due to the precession of the carrier spins around the protons. Our results demonstrate that while conformational disorder can influence the observed EDMR signals, including the sign of the current changes on resonance as well as the magnitudes of local hyperfine fields and charge carrier spin-orbit interactions, it does not qualitatively affect the nature of spin-dependent transitions in this material. At 293 K and 10 K, polaron-pair recombination through weakly spin-spin coupled intermediate charge carrier pair states is dominant, while at low temperatures, additional signatures of spin-dependent charge transport through the interaction of polarons with triplet excitons are seen in the half-field resonance of a triplet spin-1 species.
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Submitted 8 July, 2016;
originally announced July 2016.
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Inverse Spin Hall Effect from pulsed Spin Current in Organic Semiconductors with Tunable Spin-Orbit Coupling
Authors:
Dali Sun,
Kipp J. van Schooten,
Hans Malissa,
Marzieh Kavand,
Chuang Zhang,
Christoph Boehme,
Z. Valy Vardeny
Abstract:
Exploration of spin-currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates has been of great interest for potential spintronics applications. Due to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excita…
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Exploration of spin-currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates has been of great interest for potential spintronics applications. Due to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals using pulsed ferromagnetic resonance, where the ISHE is ~2-3 orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from pi-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the molecule surface curvature. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin-currents at room temperature, and paves the way for spin-orbitronics in plastic materials.
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Submitted 24 November, 2015;
originally announced November 2015.
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Spin-dependent exciton quenching and intrinsic spin coherence in CdSe/CdS nanocrystals
Authors:
Kipp J. van Schooten,
Jing Huang,
William J. Baker,
Dmitri V. Talapin,
Christoph Boehme,
John M. Lupton
Abstract:
Large surface to volume ratios of semiconductor nanocrystals cause susceptibility to charge trapping, which can modify luminescence yields and induce single-particle blinking. Optical spectroscopies cannot differentiate between bulk and surface traps in contrast to spin-resonance techniques, which in principle avail chemical information on such trap sites. Magnetic resonance detection via spin-con…
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Large surface to volume ratios of semiconductor nanocrystals cause susceptibility to charge trapping, which can modify luminescence yields and induce single-particle blinking. Optical spectroscopies cannot differentiate between bulk and surface traps in contrast to spin-resonance techniques, which in principle avail chemical information on such trap sites. Magnetic resonance detection via spin-controlled photoluminescence enables the direct observation of interactions between emissive excitons and trapped charges. This approach allows the discrimination of two functionally different trap states in CdSe/CdS nanocrystals underlying the fluorescence quenching and thus blinking mechanisms: a spin-dependent Auger process in charged particles; and a charge-separated state pair process, which leaves the particle neutral. The paramagnetic trap centers offer control of energy transfer from the wide-gap CdS to the narrow-gap CdSe, i.e. light harvesting within the heterostructure. Coherent spin motion within the trap states of the CdS arms of nanocrystal tetrapods is reflected by spatially remote luminescence from CdSe cores with surprisingly long coherence times of >300 ns at 3.5 K.
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Submitted 21 October, 2012;
originally announced October 2012.