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Quantum control of the tin-vacancy spin qubit in diamond
Authors:
Romain Debroux,
Cathryn P. Michaels,
Carola M. Purser,
Noel Wan,
Matthew E. Trusheim,
Jesús Arjona Martínez,
Ryan A. Parker,
Alexander M. Stramma,
Kevin C. Chen,
Lorenzo de Santis,
Evgeny M. Alexeev,
Andrea C. Ferrari,
Dirk Englund,
Dorian A. Gangloff,
Mete Atatüre
Abstract:
Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions towards spin-photon entanglement schemes. Here, we demonstrate multi-axis coherent cont…
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Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions towards spin-photon entanglement schemes. Here, we demonstrate multi-axis coherent control of the SnV spin qubit via an all-optical stimulated Raman drive between the ground and excited states. We use coherent population trapping and optically driven electronic spin resonance to confirm coherent access to the qubit at 1.7 K, and obtain spin Rabi oscillations at a rate of $Ω/2π$=3.6(1) MHz. All-optical Ramsey interferometry reveals a spin dephasing time of $T_2^*$=1.3(3)$μ$s and two-pulse dynamical decoupling already extends the spin coherence time to $T_2$=0.33(14) ms. Combined with transform-limited photons and integration into photonic nanostructures, our results make the SnV a competitive spin-photon building block for quantum networks.
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Submitted 1 June, 2021;
originally announced June 2021.
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Transform-limited photons from a coherent tin-vacancy spin in diamond
Authors:
Matthew E. Trusheim,
Benjamin Pingault,
Noel H Wan,
Mustafa Gundogan,
Lorenzo De Santis,
Romain Debroux,
Dorian Gangloff,
Carola Purser,
Kevin C. Chen,
Michael Walsh,
Joshua J. Rose,
Jonas N. Becker,
Benjamin Lienhard,
Eric Bersin,
Ioannis Paradeisanos,
Gang Wang,
Dominika Lyzwa,
Alejandro R-P. Montblanch,
Girish Malladi,
Hassaram Bakhru,
Andrea C. Ferrari,
Ian Walmsley,
Mete Atature,
Dirk Englund
Abstract:
Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving an…
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Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phononlimited with an exponential temperature scaling leading to $T_1$ $>$ 10 ms, and the coherence time, $T_2$ reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.
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Submitted 6 January, 2020; v1 submitted 19 November, 2018;
originally announced November 2018.
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Overcomplete quantum tomography of a path-entangled two-photon state
Authors:
L. De Santis,
G. Coppola,
C. Antón,
N. Somaschi,
C. Gómez,
A. Lemaître,
I. Sagnes,
L. Lanco,
J. C. Loredo,
O. Krebs,
P. Senellart
Abstract:
Path-entangled N-photon states can be obtained through the coalescence of indistinguishable photons inside linear networks. They are key resources for quantum enhanced metrology, quantum imaging, as well as quantum computation based on quantum walks. However, the quantum tomography of path-entangled indistinguishable photons is still in its infancy as it requires multiple phase estimations increas…
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Path-entangled N-photon states can be obtained through the coalescence of indistinguishable photons inside linear networks. They are key resources for quantum enhanced metrology, quantum imaging, as well as quantum computation based on quantum walks. However, the quantum tomography of path-entangled indistinguishable photons is still in its infancy as it requires multiple phase estimations increasing rapidly with N. Here, we propose and implement a method to measure the quantum tomography of path-entangled two-photon states. A two-photon state is generated through the Hong-Ou-Mandel interference of highly indistinguishable single photons emitted by a semiconductor quantum dot-cavity device. To access both the populations and the coherences of the path-encoded density matrix, we introduce an ancilla spatial mode and perform photon correlations as a function of a single phase in a split Mach-Zehnder interferometer. We discuss the accuracy of standard quantum tomography techniques and show that an overcomplete data set can reveal spatial coherences that could be otherwise hidden due to limited or noisy statistics. Finally, we extend our analysis to extract the truly indistinguishable part of the density matrix, which allows us to identify the main origin for the imperfect fidelity to the maximally entangled state.
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Submitted 25 July, 2017;
originally announced July 2017.
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Reducing phonon-induced decoherence in solid-state single-photon sources with cavity quantum electrodynamics
Authors:
Thomas Grange,
Niccolo Somaschi,
Carlos Antón,
Lorenzo De Santis,
Guillaume Coppola,
Valérian Giesz,
Aristide Lemaître,
Isabelle Sagnes,
Alexia Auffèves,
Pascale Senellart
Abstract:
Solid-state emitters are excellent candidates for developing integrated sources of single photons. Yet, phonons degrade the photon indistinguishability both through pure dephasing of the zero-phonon line and through phonon-assisted emission. Here, we study theoretically and experimentally the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity as a function of t…
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Solid-state emitters are excellent candidates for developing integrated sources of single photons. Yet, phonons degrade the photon indistinguishability both through pure dephasing of the zero-phonon line and through phonon-assisted emission. Here, we study theoretically and experimentally the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity as a function of temperature. We show that a large coupling to a high quality factor cavity can simultaneously reduce the effect of both phonon-induced sources of decoherence. It first limits the effect of pure dephasing on the zero phonon line with indistinguishabilities above $97\%$ up to $18$ K. Moreover, it efficiently redirects the phonon sidebands into the zero-phonon line and brings the indistinguishability of the full emission spectrum from $87\%$ (resp. $24\%$) without cavity effect to more than $99\%$ (resp. $76\%$) at $0$ K (resp. $20$ K). We provide guidelines for optimal cavity designs that further minimize the phonon-induced decoherence.
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Submitted 19 May, 2017; v1 submitted 9 December, 2016;
originally announced December 2016.
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Coherent control of a solid-state quantum bit with few-photon pulses
Authors:
V. Giesz,
N. Somaschi,
G. Hornecker,
T. Grange,
B. Reznychenko,
L. De Santis,
J. Demory,
C. Gomez,
I. Sagnes,
A. Lemaitre,
O. Krebs,
N. D. Lanzillotti-Kimura,
L. Lanco,
A. Auffeves,
P. Senellart
Abstract:
Single photons are the natural link between the nodes of a quantum network: they coherently propagate and interact with many types of quantum bits including natural and artificial atoms. Ideally, one atom should deterministically control the state of a photon and vice-versa. The interaction between free space photons and an atom is however intrinsically weak and many efforts have been dedicated to…
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Single photons are the natural link between the nodes of a quantum network: they coherently propagate and interact with many types of quantum bits including natural and artificial atoms. Ideally, one atom should deterministically control the state of a photon and vice-versa. The interaction between free space photons and an atom is however intrinsically weak and many efforts have been dedicated to develop an efficient interface. Recently, it was shown that the propagation of light can be controlled by an atomic resonance coupled to a cavity or a single mode waveguide. Here we demonstrate that the state of a single artificial atom in a cavity can be efficiently controlled by a few-photon pulse. We study a quantum dot optimally coupled to an electrically-controlled cavity device, acting as a near optimal one-dimensional atom. By monitoring the exciton population through resonant fluorescence, we demonstrate Rabi oscillations with a $π$-pulse of only 3.8 photons on average. The probability to flip the exciton quantum bit with a single photon Fock state is calculated to reach 55% in the same device.
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Submitted 15 December, 2015;
originally announced December 2015.
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Cavity-Enhanced Two-Photon Interference using Remote Quantum Dot Sources
Authors:
V. Giesz,
S. L. Portalupi,
T. Grange,
C. Antón,
L. De Santis,
J. Demory,
N. Somaschi,
I. Sagnes,
A. Lemaître,
L. Lanco,
A. Auffeves,
P. Senellart
Abstract:
Quantum dots in cavities have been shown to be very bright sources of indistinguishable single photons. Yet the quantum interference between two bright quantum dot sources, a critical step for photon based quantum computation, has never been investigated. Here we report on such a measurement, taking advantage of a deterministic fabrication of the devices. We show that cavity quantum electrodynamic…
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Quantum dots in cavities have been shown to be very bright sources of indistinguishable single photons. Yet the quantum interference between two bright quantum dot sources, a critical step for photon based quantum computation, has never been investigated. Here we report on such a measurement, taking advantage of a deterministic fabrication of the devices. We show that cavity quantum electrodynamics can efficiently improve the quantum interference between remote quantum dot sources: poorly indistinguishable photons can still interfere with good contrast with high quality photons emitted by a source in the strong Purcell regime. Our measurements and calculations show that cavity quantum electrodynamics is a powerful tool for interconnecting several devices.
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Submitted 21 July, 2015; v1 submitted 27 May, 2015;
originally announced May 2015.
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Electron Localization at Metal Surfaces
Authors:
L. De Santis,
R. Resta
Abstract:
We investigate some surfaces of a paradigmatic sp bonded metal--namely, Al(110), Al(100), and Al(111)--by means of the "electron localization function" (ELF), implemented in a first-principle pseudopotential framework. ELF is a ground-state property which discriminates in a very sharp, quantitative, way between different kinds of bonding. ELF shows that in the bulk of Al the electron distributio…
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We investigate some surfaces of a paradigmatic sp bonded metal--namely, Al(110), Al(100), and Al(111)--by means of the "electron localization function" (ELF), implemented in a first-principle pseudopotential framework. ELF is a ground-state property which discriminates in a very sharp, quantitative, way between different kinds of bonding. ELF shows that in the bulk of Al the electron distribution is essentially jelliumlike, while what happens at the surface strongly depends on packing. At the least packed surface, Al(110), ELF indicates a free-atom nature of the electron distribution in the outer region. The most packed surface, Al(111), is instead at the opposite end, and can be regarded as a jellium surface weakly perturbed by the presence of the ionic cores.
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Submitted 10 January, 2000;
originally announced January 2000.
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Serine Proteases: an Ab Initio Molecular Dynamics Study
Authors:
L. De Santis,
P. Carloni
Abstract:
In serine proteases (SP's), the H-bond between His-57 and Asp-102, and that between Gly-193 and the transition state intermediate play a crucial role for enzymatic function. To shed light on the nature of these interactions, we have carried out ab initio molecular dynamics simulations on complexes representing adducts between the reaction intermediate and elastase (one protein belonging to the S…
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In serine proteases (SP's), the H-bond between His-57 and Asp-102, and that between Gly-193 and the transition state intermediate play a crucial role for enzymatic function. To shed light on the nature of these interactions, we have carried out ab initio molecular dynamics simulations on complexes representing adducts between the reaction intermediate and elastase (one protein belonging to the SP family). Our calculations indicate the presence of a low--barrier H-bond between His-57 and Asp-102, in complete agreement with NMR experiments on enzyme--transition state analog complexes. Comparison with an ab initio molecular dynamics simulation on a model of the substrate--enzyme adduct indicates that the Gly-193--induced strong stabilization of the intermediate is accomplished by charge/dipole interactions and not by H-bonding as previously suggested. Inclusion of the protein electric field in the calculations does not affect significantly the charge distribution.
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Submitted 1 July, 1999;
originally announced July 1999.
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Coordination defects in a-Si and a-Si:H : a characterization from first principles calculations
Authors:
M. Peressi,
M. Fornari,
S. de Gironcoli,
L. De Santis,
A. Baldereschi
Abstract:
We study by means of first-principles pseudopotential method the coordination defects in a-Si and a-Si:H, also in their formation and their evolution upon hydrogen interaction. An accurate analysis of the valence charge distribution and of the ``electron localization function'' (ELF) allows to resolve possible ambiguities in the bonding configuration, and in particular to identify clearly three-…
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We study by means of first-principles pseudopotential method the coordination defects in a-Si and a-Si:H, also in their formation and their evolution upon hydrogen interaction. An accurate analysis of the valence charge distribution and of the ``electron localization function'' (ELF) allows to resolve possible ambiguities in the bonding configuration, and in particular to identify clearly three-fold (T_3) and five-fold (T_5) coordinated defects. We found that electronic states in the gap can be associated to both kind of defects, and that in both cases the interaction with hydrogen can reduce the density of states in the gap.
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Submitted 8 June, 1999;
originally announced June 1999.
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Surface Reconstructions and Bonding via the Electron Localization Function: The Case of Si(001)
Authors:
L. De Santis,
R. Resta
Abstract:
The bonding pattern of a covalent semiconductor is disrupted when a surface is cut while keeping a rigid (truncated bulk) geometry. The covalent bonds are partly reformed (with a sizeable energy gain) when reconstruction is allowed. We show that the ``electron localization function'' (ELF)---applied within a first--principles pseudopotential framework---provides un unprecedented insight into the…
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The bonding pattern of a covalent semiconductor is disrupted when a surface is cut while keeping a rigid (truncated bulk) geometry. The covalent bonds are partly reformed (with a sizeable energy gain) when reconstruction is allowed. We show that the ``electron localization function'' (ELF)---applied within a first--principles pseudopotential framework---provides un unprecedented insight into the bonding mechanisms. In the unreconstructed surface one detects a partly metallic character, which disappears upon reconstruction. In the surface reformed bonds, the ELF sharply visualizes strongly paired electrons, similar in character to those of the bulk bonds.
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Submitted 19 March, 1999;
originally announced March 1999.
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N-representability and density-functional construction in curvilinear coordinates
Authors:
L. De Santis,
R. Resta
Abstract:
In practical implementations of density-functional theory, the only term where an orbital description is needed is the kinetic one. Even this term in principle depends on the density only, but its explicit form is unknown. We provide a novel solution of the N-representability problem for an extended system, which implies an explicit form for the Kohn-Sham kinetic energy in terms of the density.…
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In practical implementations of density-functional theory, the only term where an orbital description is needed is the kinetic one. Even this term in principle depends on the density only, but its explicit form is unknown. We provide a novel solution of the N-representability problem for an extended system, which implies an explicit form for the Kohn-Sham kinetic energy in terms of the density. Our approach is based on a periodic coordinate mapping, uniquely defined by the Fourier coefficients of the metric. The density functional is thus expressed as an explicit functional of the metric tensor: since N-representability is enforced, our constructive recipe provides a variational approximation. Furthermore, we show that our geometric viewpoint is quite naturally related to the electron localization function (ELF), which provides a very informative analysis of the electron distribution. Studies of ELF, as obtained from accurate Kohn-Sham orbitals in real materials, allow an appraisal of the variational approximate density functional. We show that the value of an approximate functional-either the present geometric-based one or some previous ones based on different constructive recipes-strongly depends on the nature of the chemical bonding in the material.
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Submitted 15 December, 1997;
originally announced December 1997.
