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Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths
Authors:
Konstantinos Pantzas,
Sylvain Combrié,
Myriam Bailly,
Raphaël Mandouze,
Francesco Rinaldi Talenti,
Abdelmounaim Harouri,
Bruno Gérard,
Grégoire Beaudoin,
Luc Le Gratiet,
Gilles Patriarche,
Alfredo de Rossi,
Yoan Léger,
Isabelle Sagnes,
Arnaud Grisard
Abstract:
A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation c…
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A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide.
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Submitted 5 May, 2022; v1 submitted 17 March, 2022;
originally announced March 2022.
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Measurement of the linear thermo-optical coefficient of Ga$_{0.51}$In$_{0.49}$P using photonic crystal nanocavities
Authors:
Sergei Sokolov,
Jin Lian,
Sylvain Combrié,
Alfredo De Rossi,
Allard P. Mosk
Abstract:
Ga$_{0.51}$In$_{0.49}$P is a promising candidate for thermally tunable nanophotonic devices due to its low thermal conductivity. In this work we study its thermo-optical response. We obtain the linear thermo-optical coefficient $dn/dT=2.0\pm0.3\cdot 10^{-4}\,\rm{K}^{-1}$ by investigating the transmission properties of a single mode-gap photonic crystal nanocavity.
Ga$_{0.51}$In$_{0.49}$P is a promising candidate for thermally tunable nanophotonic devices due to its low thermal conductivity. In this work we study its thermo-optical response. We obtain the linear thermo-optical coefficient $dn/dT=2.0\pm0.3\cdot 10^{-4}\,\rm{K}^{-1}$ by investigating the transmission properties of a single mode-gap photonic crystal nanocavity.
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Submitted 11 April, 2017; v1 submitted 16 December, 2016;
originally announced December 2016.
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Fano lines in the reflection spectrum of directly coupled systems of waveguides and cavities: measurements, modeling and manipulation of the Fano asymmetry
Authors:
Jin Lian,
Sergei Sokolov,
Emre Yüce,
Sylvain Combrié,
Alfredo De Rossi,
Allard P. Mosk
Abstract:
We measure and analyze reflection spectra of directly coupled systems of waveguides and cavities. The observed Fano lines offer insight in the reflection and coupling processes. Very different from side-coupled systems, the observed Fano line shape is not caused by the termini of the waveguide, but the coupling process between the measurement device fiber and the waveguide. Our experimental result…
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We measure and analyze reflection spectra of directly coupled systems of waveguides and cavities. The observed Fano lines offer insight in the reflection and coupling processes. Very different from side-coupled systems, the observed Fano line shape is not caused by the termini of the waveguide, but the coupling process between the measurement device fiber and the waveguide. Our experimental results and analytical model show that the Fano parameter that describes the Fano line shape is very sensitive to the coupling condition. A movement of the fiber well below the Rayleigh range can lead to a drastic change of the Fano line shape.
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Submitted 27 June, 2017; v1 submitted 26 October, 2016;
originally announced October 2016.
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Tuning out disorder-induced localization in nanophotonic cavity arrays
Authors:
Sergei Sokolov,
Jin Lian,
Emre Yüce,
Sylvain Combrié,
Alfredo De Rossi,
Allard P. Mosk
Abstract:
Weakly coupled high-Q nanophotonic cavities are building blocks of slow-light waveguides and other nanophotonic devices. Their functionality critically depends on tuning as resonance frequencies should stay within the bandwidth of the device. Unavoidable disorder leads to random frequency shifts which cause localization of the light in single cavities. We present a new method to finely tune indivi…
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Weakly coupled high-Q nanophotonic cavities are building blocks of slow-light waveguides and other nanophotonic devices. Their functionality critically depends on tuning as resonance frequencies should stay within the bandwidth of the device. Unavoidable disorder leads to random frequency shifts which cause localization of the light in single cavities. We present a new method to finely tune individual resonances of light in a system of coupled nanocavities. We use holographic laser-induced heating and address thermal crosstalk between nanocavities using a response matrix approach. As a main result we observe a simultaneous anticrossing of 3 nanophotonic resonances, which were initially split by disorder.
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Submitted 11 April, 2017; v1 submitted 3 August, 2016;
originally announced August 2016.
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Broadband tunable hybrid photonic crystal-nanowire light emitter
Authors:
Christophe E. Wilhelm,
M. Iqbal Bakti Utama,
Qihua Xiong,
Cesare Soci,
Gaëlle Lehoucq,
Daniel Dolfi,
Alfredo De Rossi,
Sylvain Combrié
Abstract:
We integrate about 100 single Cadmium Selenide semiconductor nanowires in self-standing Silicon Nitride photonic crystal cavities in a single processing run. Room temperature measurements reveal a single narrow emission linewidth, corresponding to a Q-factor as large as 5000. By varying the structural parameters of the photonic crystal, the peak wavelength is tuned, thereby covering the entire emi…
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We integrate about 100 single Cadmium Selenide semiconductor nanowires in self-standing Silicon Nitride photonic crystal cavities in a single processing run. Room temperature measurements reveal a single narrow emission linewidth, corresponding to a Q-factor as large as 5000. By varying the structural parameters of the photonic crystal, the peak wavelength is tuned, thereby covering the entire emission spectral range of the active material. A very large spectral range could be covered by heterogeneous integration of different active materials.
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Submitted 25 September, 2015;
originally announced September 2015.
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Local thermal resonance control of GaInP photonic crystal membrane cavities using ambient gas cooling
Authors:
Sergei Sokolov,
Jin Lian,
Emre Yüce,
Sylvain Combrié,
Gaelle Lehoucq,
Alfredo De Rossi,
Allard P. Mosk
Abstract:
We perform spatially dependent tuning of a GaInP photonic crystal cavity using a continuous wave violet laser. Local tuning is obtained by laser heating of the photonic crystal membrane. The cavity resonance shift is measured for different pump positions and for two ambient gases: helium and nitrogen. We find that the width of the temperature profile induced in the membrane depends strongly on the…
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We perform spatially dependent tuning of a GaInP photonic crystal cavity using a continuous wave violet laser. Local tuning is obtained by laser heating of the photonic crystal membrane. The cavity resonance shift is measured for different pump positions and for two ambient gases: helium and nitrogen. We find that the width of the temperature profile induced in the membrane depends strongly on the thermal conductivity of the ambient gas. For He gas a narrow spatial width of the temperature profile of 2.8 um is predicted and verified in experiment.
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Submitted 4 May, 2015; v1 submitted 6 March, 2015;
originally announced March 2015.
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Strongly coupled slow-light polaritons in one-dimensional disordered localized states
Authors:
Jie Gao,
Sylvain Combrie,
Baolai Liang,
Peter Schmitteckert,
Gaelle Lehoucq,
Stephane Xavier,
Xinan Xu,
Kurt Busch,
Diana L. Huffaker,
Alfredo De Rossi,
Chee Wei Wong
Abstract:
Cavity quantum electrodynamics advances the coherent control of a single quantum emitter with a quantized radiation field mode, typically piecewise engineered for the highest finesse and confinement in the cavity field. This enables the possibility of strong coupling for chip-scale quantum processing, but till now is limited to few research groups that can achieve the precision and deterministic r…
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Cavity quantum electrodynamics advances the coherent control of a single quantum emitter with a quantized radiation field mode, typically piecewise engineered for the highest finesse and confinement in the cavity field. This enables the possibility of strong coupling for chip-scale quantum processing, but till now is limited to few research groups that can achieve the precision and deterministic requirements for these polariton states. Here we observe for the first time coherent polariton states of strong coupled single quantum dot excitons in inherently disordered one-dimensional localized modes in slow-light photonic crystals. Large vacuum Rabi splittings up to 311 μeV are observed, one of the largest avoided crossings in the solid-state. Our tight-binding models with quantum impurities detail these strong localized polaritons, spanning different disorder strengths, complementary to model-extracted pure dephasing and incoherent pumping rates. Such disorder-induced slow-light polaritons provide a platform towards coherent control, collective interactions, and quantum information processing.
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Submitted 9 June, 2013;
originally announced June 2013.
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Interplay of plasma-induced and fast thermal nonlinearities in a GaAs-based photonic crystal nanocavity
Authors:
Alfredo de Rossi,
Michele Lauritano,
Sylvain Combrié,
Quynh Vy Tran,
Chad Husko
Abstract:
We investigate the nonlinear response of GaAs-based photonic crystal cavities at time scales which are much faster than the typical thermal relaxation rate in photonic devices. We demonstrate a strong interplay between thermal and carrier induced nonlinear effects. We have introduced a dynamical model entailing two thermal relaxation constants which is in very good agreement with experiments. Th…
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We investigate the nonlinear response of GaAs-based photonic crystal cavities at time scales which are much faster than the typical thermal relaxation rate in photonic devices. We demonstrate a strong interplay between thermal and carrier induced nonlinear effects. We have introduced a dynamical model entailing two thermal relaxation constants which is in very good agreement with experiments. These results will be very important for Photonic Crystal-based nonlinear devices intended to deal with practical high repetition rate optical signals.
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Submitted 13 March, 2009; v1 submitted 10 December, 2008;
originally announced December 2008.
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GaAs photonic crystal cavity with ultra-high Q: microwatt nonlinearity at 1.55 $μ$m
Authors:
Sylvain Combrie',
Alfredo De Rossi,
Quynh Vy Tran,
Henri Benisty
Abstract:
We have realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys.Lett., \textbf{88}, 041112, (2006)]. We measure a quality factor Q=700,000, which proves that ultra-high Q nanocavities are also feasible in GaAs. We show that, due to larger two-photon absorption (TPA) in GaAs, nonlinearities appear at the microwatt-level and will be mo…
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We have realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys.Lett., \textbf{88}, 041112, (2006)]. We measure a quality factor Q=700,000, which proves that ultra-high Q nanocavities are also feasible in GaAs. We show that, due to larger two-photon absorption (TPA) in GaAs, nonlinearities appear at the microwatt-level and will be more functional in gallium arsenide than in silicon nanocavities.
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Submitted 26 June, 2008; v1 submitted 2 April, 2008;
originally announced April 2008.
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Ultra low threshold current THz quantum cascade lasers based on buried strip-waveguides
Authors:
S. Dhillon,
J. Alton,
S. Barbieri,
C. Sirtori,
A. de Rossi,
M. Calligaro,
H. E. Beere,
D. Ritchie
Abstract:
THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19 mA at 4K in both pulsed and continuous wave operation. Thanks to the semiconductor material on both sides of the active region and to the narrow width of the…
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THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19 mA at 4K in both pulsed and continuous wave operation. Thanks to the semiconductor material on both sides of the active region and to the narrow width of the top metal strip, the thermal properties of these devices have been greatly improved. A decrease of the thermal resistance by over a factor of two compared to standard ridge double-metal lasers of similar size has been measured.
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Submitted 8 March, 2005;
originally announced March 2005.
