Showing 1–2 of 2 results for author: de Heluani, S P
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Conductivity fluctuations in proton-implanted ZnO microwires
Authors:
B. Dolgin,
I. Lorite,
Y. Kumar,
P. Esquinazi,
G. Jung,
B. Straube,
S. Perez de Heluani
Abstract:
The electric noise can be an important limitation for applications of conducting elements of size in the nanometer range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not been characterized yet. In this study we have investigated the conductivity fluctuations in 10~nm thick current paths produced by proton implantation of ZnO microwires at…
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The electric noise can be an important limitation for applications of conducting elements of size in the nanometer range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not been characterized yet. In this study we have investigated the conductivity fluctuations in 10~nm thick current paths produced by proton implantation of ZnO microwires at room temperature. The voltage noise under a constant dc current bias in undoped as well as in Li-doped microwires is characterized by $1/f^a$ power spectra with $a \sim 1$. The noise intensity scales with the square of the bias current pointing out to bias-independent resistivity fluctuations as a source of the observed noise. The normalized power spectral density appears inversely proportional to the number of carriers in the probed sample volume, in agreement with the phenomenological Hooge law. For the proton-implanted ZnO microwire and at 1~Hz we obtain a normalized power spectral density as low as $\sim 10^{-11}~$Hz$^{-1}$.
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Submitted 1 June, 2016;
originally announced June 2016.
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Detection of defect-induced magnetism in low-dimensional ZnO structures by Magnetophotocurrent
Authors:
Israel Lorite,
Yogesh Kumar,
Pablo Esquinazi,
Carlos Zandalazini,
Silvia Perez de Heluani
Abstract:
The detection of defect-induced magnetic order in single low-dimensional oxide structures is in general difficult because of the relatively small yield of magnetically ordered regions. In this work we have studied the effect of an external magnetic field on the transient photocurrent measured after light irradiation on different ZnO samples at room temperature. We found that a magnetic field produ…
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The detection of defect-induced magnetic order in single low-dimensional oxide structures is in general difficult because of the relatively small yield of magnetically ordered regions. In this work we have studied the effect of an external magnetic field on the transient photocurrent measured after light irradiation on different ZnO samples at room temperature. We found that a magnetic field produces a change in the relaxation rate of the transient photocurrent only in magnetically ordered ZnO samples. This rate can decrease or increase with field depending whether the magnetic order region is in the bulk or only at the surface of the ZnO sample. The phenomenon reported here is of importance for the development of magneto-optical low-dimensional oxides devices and provide a new guideline for the detection of magnetic order in low-dimensional magnetic semiconductors.
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Submitted 22 April, 2015;
originally announced April 2015.
