Showing 1–18 of 18 results for author: Zimmerman, J

Drastic softening of Pd nanoparticles induced by hydrogen cycling

Authors: Jonathan Zimmerman, Maria Vrellou, Stefan Wagner, Astrid Pundt, Christoph Kirchlechner, Eugen Rabkin

Abstract: Single crystalline faceted Pd nanoparticles attached to a sapphire substrate were fabricated employing the solid state dewetting method. The as-dewetted nanoparticles tested in compression exhibited all features of dislocation nucleation-controlled plasticity, including the size effect on strength and ultrahigh compressive strength reaching up to 11 GPa. Hydrogen cycling of as-dewetted Pd nanopart… ▽ More Single crystalline faceted Pd nanoparticles attached to a sapphire substrate were fabricated employing the solid state dewetting method. The as-dewetted nanoparticles tested in compression exhibited all features of dislocation nucleation-controlled plasticity, including the size effect on strength and ultrahigh compressive strength reaching up to 11 GPa. Hydrogen cycling of as-dewetted Pd nanoparticles resulted in their drastic softening and in change of the deformation mode. This softening effect was correlated with the high density of glissile dislocations observed in the cycled particles. This work demonstrates that the nanomechanical behavior of hydride-forming metals can be manipulated by hydrogen cycling. △ Less

Submitted 7 April, 2025; originally announced April 2025.

Journal ref: Scripta Materialia 2024

Redundant Cross-Correlation for Drift Correction in SEM Nanoparticle Imaging

Authors: Iago Bischoff Montenegro, Konrad Prikoszovich, Subin Lee, Kilian Quiring, Jonathan Zimmerman, Christoph Kirchlechner

Abstract: Scanning Electron Microscopy (SEM) is a widely used tool for nanoparticle characterization, but long-term directional drift can compromise image quality. We present a novel algorithm for post-imaging drift correction in SEM nanoparticle imaging. Our approach combines multiple rapidly acquired, noisy images to produce a single high-quality overlay through redundant cross-correlation, preventing dri… ▽ More Scanning Electron Microscopy (SEM) is a widely used tool for nanoparticle characterization, but long-term directional drift can compromise image quality. We present a novel algorithm for post-imaging drift correction in SEM nanoparticle imaging. Our approach combines multiple rapidly acquired, noisy images to produce a single high-quality overlay through redundant cross-correlation, preventing drift-induced distortions. The preservation of critical geometrical properties and accurate imaging of surface features were verified using Atomic Force Microscopy. On platinum nanoparticles with diameters of 300 to 1000 nm, significant improvements in the mean-based signal-to-noise ratio (SNR) were achieved, increasing from 4.4 dB in single images to 11.3 dB when overlaying five images. This method offers a valuable tool for enhancing SEM image quality in nanoparticle research and metrology, particularly in settings without specialized hardware-based drift correction. △ Less

Submitted 30 October, 2024; originally announced October 2024.

Isotropic and Anisotropic g-factor Corrections in GaAs Quantum Dots

Authors: Leon C. Camenzind, Simon Svab, Peter Stano, Liuqi Yu, Jeramy D. Zimmerman, Arthur C. Gossard, Daniel Loss, Dominik M. Zumbühl

Abstract: We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength w… ▽ More We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength which allows us to extract the g-factor. The measured g-factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g-factor. Because this implies a dependence of the spin splitting on the magnetic field direction, these findings are of significance for spin qubits in GaAs quantum dots. △ Less

Submitted 21 October, 2020; originally announced October 2020.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Lett. 127, 057701 (2021)

Estimating Evaporation Fields and Specific Heats Through Atom Probe Tomography

Authors: Andrew P. Proudian, Jeramy D. Zimmerman

Abstract: Estimations of evaporation field values in atom probe tomography (APT) literature are sparse despite their importance in the reconstruction and data analysis process. This work describes a straightforward method for estimating the zero-barrier evaporation field ($F_E$) that uses the measured voltage vs. laser pulse energy for a constant evaporation rate. This estimate depends on the sample radius… ▽ More Estimations of evaporation field values in atom probe tomography (APT) literature are sparse despite their importance in the reconstruction and data analysis process. This work describes a straightforward method for estimating the zero-barrier evaporation field ($F_E$) that uses the measured voltage vs. laser pulse energy for a constant evaporation rate. This estimate depends on the sample radius of curvature and its specific heat ($C_p$). If a similar measurement is made of the measured voltage vs. base temperature for a fixed evaporation rate, direct extraction of the material's $C_p$ can be made, leaving only the sample radius of curvature as an input parameter. The method is applied to extract $F_E$ from a previously published voltage vs. laser pulse energy dataset for CdTe ($18.07 \pm 0.87~\mathrm{V~nm^{-1}}$); furthermore, using the published voltage vs. base-temperature sweep of CdTe permits extraction of a specific heat ($11.27 \pm 2.54~\mathrm{J~K^{-1}mol^{-1}}$ at $23.1~\mathrm{K}$) in good agreement with the literature ($11.14~\mathrm{J~K^{-1}mol^{-1}}$ at $22.17~\mathrm{K}$). The method is then applied to the previously uncharacterized material tris[2-phenylpyridinato-C2,N]iridium(III) ($\mathrm{Ir(ppy)_3}$), yielding $F_E = 7.49 \pm 0.96~\mathrm{V~nm^{-1}}$ and $C_p = 173 \pm 27~\mathrm{J~K^{-1} mol^{-1}}$; this $F_E$ is much lower than most materials characterized with APT to date. △ Less

Submitted 4 August, 2020; originally announced August 2020.

Comments: 5 pages, 2 figures, submitted to Applied Physics Letters

Using Ripley's K-function to Characterize Clustering In 3-Dimensional Point Patterns With a Case Study in Atom Probe Tomography

Authors: Galen B. Vincent, Andrew P. Proudian, Jeramy D. Zimmerman

Abstract: The size and structure of spatial molecular and atomic clustering can significantly impact material properties and is therefore important to accurately quantify. Ripley's K-function (K(r)), a measure of spatial correlation, can be used to perform such quantification when the material system of interest can be represented as a marked point pattern. This work demonstrates how machine learning models… ▽ More The size and structure of spatial molecular and atomic clustering can significantly impact material properties and is therefore important to accurately quantify. Ripley's K-function (K(r)), a measure of spatial correlation, can be used to perform such quantification when the material system of interest can be represented as a marked point pattern. This work demonstrates how machine learning models based on K(r)-derived metrics can accurately estimate cluster size and intra-cluster density in simulated three dimensional (3D) point patterns containing spherical clusters of varying size; over 90% of model estimates for cluster size and intra-cluster density fall within 11% and 18% error of the true values, respectively. These K(r)-based size and density estimates are then applied to an experimental APT reconstruction to characterize MgZn clusters in a 7000 series aluminum alloy. We find that the estimates are more accurate, consistent, and robust to user interaction than estimates from the popular maximum separation algorithm. Using K(r) and machine learning to measure clustering is an accurate and repeatable way to quantify this important material attribute. △ Less

Submitted 31 July, 2020; originally announced July 2020.

Comments: 17 pages 4 figures. SI has 14 pages and 13 figures

Atom Probe Tomography of Organic Molecular Materials: Sub-Dalton Nanometer-Scale Quantification

Authors: Andrew P. Proudian, Matthew B. Jaskot, David R. Diercks, Brian P. Gorman, Jeramy D. Zimmerman

Abstract: In this paper, we demonstrate that atom probe tomography (APT) can be applied to small-molecule organic materials. We show that APT can provide an unprecedented combination of mass resolution of $\lt 1~\mathrm{Da}$, spatial resolution of $\sim 0.3~\mathrm{nm}$ in z and $\sim 1~\mathrm{nm}$ in x-y, and analytic sensitivity of $\sim 50~\mathrm{ppm}$ with no evidence of molecular fragmentation. We di… ▽ More In this paper, we demonstrate that atom probe tomography (APT) can be applied to small-molecule organic materials. We show that APT can provide an unprecedented combination of mass resolution of $\lt 1~\mathrm{Da}$, spatial resolution of $\sim 0.3~\mathrm{nm}$ in z and $\sim 1~\mathrm{nm}$ in x-y, and analytic sensitivity of $\sim 50~\mathrm{ppm}$ with no evidence of molecular fragmentation. We discuss two systems that demonstrate the power of APT to uncover structure-property relationships in organic systems that have proven extremely difficult to probe using existing techniques: (1) a previously published model organic photovoltaic system in which we show a chemical reaction occurs at the heterointerface; and (2) a model organic light-emitting diode system in which we show molecular segregation occurs in the emissive layer bulk. These examples illustrate the power of APT to enable new insights into organic molecular materials. △ Less

Submitted 5 August, 2020; v1 submitted 27 June, 2018; originally announced June 2018.

Comments: 14 pages, 5 figures, plus SI

Journal ref: Chem. Mater. 31 (2019) 2241-2247

Spectroscopy of Quantum-Dot Orbitals with In-Plane Magnetic Fields

Authors: Leon C. Camenzind, Liuqi Yu, Peter Stano, Jeramy Zimmerman, Arthur C. Gossard, Daniel Loss, Dominik M. Zumbühl

Abstract: We show that in-plane-magnetic-field assisted spectroscopy allows extraction of the in-plane orientation and full 3D shape of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with sub-nm precision. The method is based on measuring orbital energies in a magnetic field with various strengths and orientations in the plane of the 2D electron gas. As a result, we deduce the… ▽ More We show that in-plane-magnetic-field assisted spectroscopy allows extraction of the in-plane orientation and full 3D shape of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with sub-nm precision. The method is based on measuring orbital energies in a magnetic field with various strengths and orientations in the plane of the 2D electron gas. As a result, we deduce the microscopic quantum dot confinement potential landscape, and quantify the degree by which it differs from a harmonic oscillator potential. The spectroscopy is used to validate shape manipulation with gate voltages, agreeing with expectations from the gate layout. Our measurements demonstrate a versatile tool for quantum dots with one dominant axis of strong confinement. △ Less

Submitted 31 March, 2018; originally announced April 2018.

Comments: 4 pages, 3 color figures, including supplementary on arXiv

Journal ref: Phys. Rev. Lett. 122, 207701 (2019)

Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot

Authors: Leon C. Camenzind, Liuqi Yu, Peter Stano, Jeramy Zimmerman, Arthur C. Gossard, Daniel Loss, Dominik M. Zumbühl

Abstract: Understanding and control of the spin relaxation time $T_1$ is among the key challenges for spin based qubits. A larger $T_1$ is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In GaAs quantum dots at low temperatures and high in-plane magnetic fields $B$, the spin relaxation relies on phonon emission and spin-orbit coupling. The characteris… ▽ More Understanding and control of the spin relaxation time $T_1$ is among the key challenges for spin based qubits. A larger $T_1$ is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In GaAs quantum dots at low temperatures and high in-plane magnetic fields $B$, the spin relaxation relies on phonon emission and spin-orbit coupling. The characteristic dependence $T_1 \propto B^{-5}$ and pronounced $B$-field anisotropy were already confirmed experimentally. However, it has also been predicted 15 years ago that at low enough fields, the spin-orbit interaction is replaced by the coupling to the nuclear spins, where the relaxation becomes isotropic, and the scaling changes to $T_1 \propto B^{-3}$. We establish these predictions experimentally, by measuring $T_1$ over an unprecedented range of magnetic fields -- made possible by lower temperature -- and report a maximum $T_1 = 57\pm15$ s at the lowest fields, setting a new record for the electron spin lifetime in a nanostructure. △ Less

Submitted 4 November, 2017; originally announced November 2017.

Comments: 7 pages, 4 (color) figures

Journal ref: Nature Communications 9, 3454 (Aug 27, 2018)

Comparison of dislocation density tensor fields derived from discrete dislocation dynamics and crystal plasticity simulations of torsion

Authors: Reese Jones, Jonathan Zimmerman, Giacomo Po

Abstract: The importance of accurate simulation of the plastic deformation of ductile metals to the design of structures and components is well-known. Many techniques exist that address the length scales relevant to deformation pro- cesses, including dislocation dynamics (DD), which models the interaction and evolution of discrete dislocation line segments, and crystal plasticity (CP), which incorporates th… ▽ More The importance of accurate simulation of the plastic deformation of ductile metals to the design of structures and components is well-known. Many techniques exist that address the length scales relevant to deformation pro- cesses, including dislocation dynamics (DD), which models the interaction and evolution of discrete dislocation line segments, and crystal plasticity (CP), which incorporates the crystalline nature and restricted motion of dis- locations into a higher scale continuous field framework. While these two methods are conceptually related, there have been only nominal efforts focused on the system-level material response that use DD-generated information to enhance the fidelity of plasticity models. To ascertain to what degree the predictions of CP are consistent with those of DD, we compare their global and microstructural response in a number of deformation modes. After using nominally homogeneous compression and shear deformation dislocation dynamics simulations to calibrate crystal plasticity flow rule parameters, we compare not only the system-level stress-strain response of prismatic wires in torsion but also the resulting geometrically necessary dislocation density fields. To establish a connection between explicit description of dislocations and the continuum assumed with crystal plasticity simulations, we ascertain the minimum length-scale at which meaningful dislocation density fields appear. Our results show that, for the case of torsion, the two material models can produce comparable spatial dislocation density distributions. △ Less

Submitted 15 August, 2016; originally announced August 2016.

Control of Exciton Transport using Quantum Interference

Authors: Mark T. Lusk, Charles Stafford, Jeramy D. Zimmerman, Lincoln D. Carr

Abstract: It is shown that quantum interference can be employed to create an exciton transistor. An applied potential gates the quasi-particle motion and also discriminates between quasi-particles of differing binding energy. When implemented within nanoscale assemblies, such control elements could mediate the flow of energy and information. Quantum interference can also be used to dissociate excitons as an… ▽ More It is shown that quantum interference can be employed to create an exciton transistor. An applied potential gates the quasi-particle motion and also discriminates between quasi-particles of differing binding energy. When implemented within nanoscale assemblies, such control elements could mediate the flow of energy and information. Quantum interference can also be used to dissociate excitons as an alternative to using heterojunctions. A finite molecular setting is employed to exhibit the underlying discrete, two-particle, mesoscopic analog to Fano anti-resonance. Selected entanglement measures are shown to distinguish regimes of behavior which cannot be resolved from population dynamics alone. △ Less

Submitted 29 November, 2015; v1 submitted 9 July, 2015; originally announced July 2015.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 92, 241112 (2015)

Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot

Authors: D. E. F. Biesinger, C. P. Scheller, B. Braunecker, J. Zimmerman, A. C. Gossard, D. M. Zumbühl

Abstract: We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoi… ▽ More We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoirs, giving excellent agreement with the experiment. The electron spin is randomized by the exchange process, thus facilitating fast, gate-controlled spin initialization. At the same time, this process sets an intrinsic upper limit to the spin relaxation time. △ Less

Submitted 12 May, 2015; originally announced May 2015.

Comments: 4 pages, 5 figures (color)

Journal ref: Phys. Rev. Lett. 115, 106804 (2015)

Silver-Epoxy Microwave Filters and Thermalizers for Millikelvin Experiments

Authors: C. P. Scheller, S. Heizmann, K. Bedner, D. Giss, M. Meschke, D. M. Zumbühl, J. D. Zimmerman, A. C. Gossard

Abstract: We present Silver-epoxy filters combining excellent microwave attenuation with efficient wire thermalization, suitable for low temperature quantum transport experiments. Upon minimizing parasitic capacitances, the attenuation reaches >100 dB above ~150 MHz and - when capacitors are added - already above ~30 MHz. We measure the device electron temperature with a GaAs quantum dot and demonstrate exc… ▽ More We present Silver-epoxy filters combining excellent microwave attenuation with efficient wire thermalization, suitable for low temperature quantum transport experiments. Upon minimizing parasitic capacitances, the attenuation reaches >100 dB above ~150 MHz and - when capacitors are added - already above ~30 MHz. We measure the device electron temperature with a GaAs quantum dot and demonstrate excellent filter performance. Upon improving the sample holder and adding a second filtering stage, we obtain electron temperatures as low as 7.5 +/- 0.2 mK in metallic Coulomb blockade thermometers. △ Less

Submitted 24 March, 2014; originally announced March 2014.

Comments: 4 pages, 4 figures (color), plus supplementary information 3 pages, 1 figure (color) as ancillary arXiv pdf (SOM.pdf)

Journal ref: Appl. Phys. Lett. 104, 211106 (2014)

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

Authors: D. Maradan, L. Casparis, T. -M. Liu, D. E. F. Biesinger, C. P. Scheller, D. M. Zumbühl, J. Zimmerman, A. C. Gossard

Abstract: We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperatur… ▽ More We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperature saturates, remaining close to 10 mK. The extreme sensitivity of the thermometer to its environment as well as electronic noise complicates temperature measurements but could potentially provide further insight into the device characteristics. We discuss thermal coupling mechanisms, address possible reasons for the temperature saturation and delineate the prospects of further reducing the device electron temperature. △ Less

Submitted 10 January, 2014; originally announced January 2014.

Comments: 8 pages, 3 (color) figures

Journal ref: J. Low Temp. Phys. 175, 784 (2014)

Atomistic Potentials for Palladium-Silver Hydrides

Authors: L. M. Hale, B. M. Wong, J. A. Zimmerman, X. Zhou

Abstract: New EAM potentials for the ternary palladium-silver-hydrogen system are developed by extending a previously developed palladium-hydrogen potential. The ternary potentials accurately capture the heat of mixing and structural properties associated with solid solution alloys of palladium-silver. Stable hydrides are produced with properties that smoothly transition across the compositions. Additions o… ▽ More New EAM potentials for the ternary palladium-silver-hydrogen system are developed by extending a previously developed palladium-hydrogen potential. The ternary potentials accurately capture the heat of mixing and structural properties associated with solid solution alloys of palladium-silver. Stable hydrides are produced with properties that smoothly transition across the compositions. Additions of silver to palladium are predicted to alter the properties of the hydrides by decreasing the miscibility gap and increasing the likelihood of hydrogen atoms occupying tetrahedral interstitial sites over octahedral interstitial sites. △ Less

Submitted 21 December, 2013; originally announced December 2013.

Comments: Accepted by Modelling and Simulation in Materials Science and Engineering

Journal ref: Modelling and Simulation in Materials Science and Engineering, 21, 045005 (2013)

Energetics and diffusion of gold in bismuth telluride

Authors: Michael C. Shaughnessy, Josh D. Sugar, Norm C. Bartelt, Jonathan A. Zimmerman

Abstract: We have coupled electron microscopy and energy dispersive spectroscopy experiments with \textit{ab-initio} modeling to study the solubility and diffusion of Au in Bi$_2$Te$_3$. We found that thermal annealing of Au films results in Au concentrations in Bi$_2$Te$_3$ above the previously reported solubility limit. The time scale of Au diffusion into Bi$_2$Te$_3$ is also much greater than expected. T… ▽ More We have coupled electron microscopy and energy dispersive spectroscopy experiments with \textit{ab-initio} modeling to study the solubility and diffusion of Au in Bi$_2$Te$_3$. We found that thermal annealing of Au films results in Au concentrations in Bi$_2$Te$_3$ above the previously reported solubility limit. The time scale of Au diffusion into Bi$_2$Te$_3$ is also much greater than expected. To explain our observations, we calculate defect formation energies and diffusion barriers within DFT. We identify an interstitial mechanism consistent with the previously observed low solubility and (rapid) anisotropic diffusion. However, the lower formation energies of substitutional defects suggest that they may be active in our experiments and explain the high observed concentrations. △ Less

Submitted 20 July, 2013; v1 submitted 2 May, 2013; originally announced May 2013.

Comments: Version 2

High-fidelity simulations of CdTe vapor deposition from a new bond-order potential-based molecular dynamics method

Authors: X. W. Zhou, D. Ward, B. M. Wong, F. P. Doty, J. A. Zimmerman, G. N. Nielson, J. L. Cruz-Campa, V. P. Gupta, J. E. Granata, J. J. Chavez, D. Zubia

Abstract: CdTe has been a special semiconductor for constructing the lowest-cost solar cells and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below the theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth… ▽ More CdTe has been a special semiconductor for constructing the lowest-cost solar cells and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below the theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth of CdTe crystals are difficult to explore in experiments. Here we demonstrate the capability of a bond order potential-based molecular dynamics method for predicting the crystalline growth of CdTe films during vapor deposition simulations. Such a method may begin to enable defects generated during vapor deposition of CdTe crystals to be accurately explored. △ Less

Submitted 19 June, 2012; originally announced June 2012.

Journal ref: Physical Review B, 85, 245302 (2012)

Modeling metallic island coalescence stress via adhesive contact between surfaces

Authors: Steven C. Seel, Jeffrey J. Hoyt, Edmund B. Webb III, Jonathan A. Zimmerman

Abstract: Tensile stress generation associated with island coalescence is almost universally observed in thin films that grow via the Volmer-Weber mode. The commonly accepted mechanism for the origin of this tensile stress is a process driven by the reduction in surface energy at the expense of the strain energy associated with the deformation of coalescing islands during grain boundary formation. In the… ▽ More Tensile stress generation associated with island coalescence is almost universally observed in thin films that grow via the Volmer-Weber mode. The commonly accepted mechanism for the origin of this tensile stress is a process driven by the reduction in surface energy at the expense of the strain energy associated with the deformation of coalescing islands during grain boundary formation. In the present work, we have performed molecular statics calculations using an embedded atom interatomic potential to obtain a functional form of the interfacial energy vs distance between two closely spaced free surfaces. The sum of interfacial energy plus strain energy provides a measure of the total system energy as a function of island separation. Depending on the initial separation between islands, we find that in cases where coalescence is thermodynamically favored, gap closure can occur either spontaneously or be kinetically limited due to an energetic barrier. Atomistic simulations of island coalescence using conjugate gradient energy minimization calculations agree well with the predicted stress as a function of island size from our model of spontaneous coalescence. Molecular dynamics simulations of island coalescence demonstrate that only modest barriers to coalescence can be overcome at room temperature. A comparison with thermally activated coalescence results at room temperature reveals that existing coalescence models significantly overestimate the magnitude of the stress resulting from island coalescence. △ Less

Submitted 18 April, 2006; v1 submitted 18 November, 2005; originally announced November 2005.

Comments: 20 pages, 8 figures, 2 tables, submitted to PRB

Dislocation Emission around Nanoindentations on a (001) fcc Metal Surface Studied by STM and Atomistic Simulations

Authors: O. Rodriguez de la Fuente, J. A. Zimmerman, M. A. Gonzalez, J. de la Figuera, J. C. Hamilton, Woei Wu Pai, J. M. Rojo

Abstract: We present a combined study by Scanning Tunneling Microscopy and atomistic simulations of the emission of dissociated dislocation loops by nanoindentation on a (001) fcc surface. The latter consist of two stacking-fault ribbons bounded by Shockley partials and a stair-rod dislocation. These dissociated loops, which intersect the surface, are shown to originate from loops of interstitial characte… ▽ More We present a combined study by Scanning Tunneling Microscopy and atomistic simulations of the emission of dissociated dislocation loops by nanoindentation on a (001) fcc surface. The latter consist of two stacking-fault ribbons bounded by Shockley partials and a stair-rod dislocation. These dissociated loops, which intersect the surface, are shown to originate from loops of interstitial character emitted along the <110> directions and are usually located at hundreds of angstroms away from the indentation point. Simulations reproduce the nucleation and glide of these dislocation loops. △ Less

Submitted 30 January, 2002; originally announced January 2002.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. Lett. 88, 036101 (2002)