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Migration barriers for diffusion of As and P atoms in InP and InAs via vacancies and interstitial atoms
Authors:
Ivan A. Aleksandrov,
Konstantin S. Zhuravlev
Abstract:
Processes of diffusion of As and P atoms in InP and InAs, and atomic and energy structure of group-V vacancies and interstitial P and As atoms in InP and InAs have been investigated using density functional theory. Formation energies of group-V vacancies in InP and InAs and P and As interstitial atoms in InP and InAs have been calculated with hybrid functional. The main types of migration jumps ha…
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Processes of diffusion of As and P atoms in InP and InAs, and atomic and energy structure of group-V vacancies and interstitial P and As atoms in InP and InAs have been investigated using density functional theory. Formation energies of group-V vacancies in InP and InAs and P and As interstitial atoms in InP and InAs have been calculated with hybrid functional. The main types of migration jumps have been determined, and the energy favorable migration paths and migration barriers of As and P atoms diffusion in InP and InAs via vacancies and interstitial atoms have been calculated using climbing image nudged elastic band method. In the case of diffusion of As and P atoms in InP and InAs via interstitial atoms the diffusion process occurs via indirect interstitial mechanism. The migration energy barriers for the vacancy diffusion mechanism are 1.5-2.0 eV, the migration energy barriers for the interstitialcy mechanism are 0.3-0.6 eV. The interstitial atoms have higher formation energies compared to the formation energies of the vacancies, and total activation energies of the diffusion are comparable for the vacancy and interstitialcy mechanisms. The obtained results will be useful for modeling of the diffusion processes in semiconductor structures based on InP and InAs.
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Submitted 1 April, 2024;
originally announced April 2024.
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Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap
Authors:
T. S. Shamirzaev,
J. Debus,
D. S. Abramkin,
D. Dunker,
D. R. Yakovlev,
D. V. Dmitriev,
A. K. Gutakovskii,
L. S. Braginsky,
K. S. Zhuravlev,
M. Bayer
Abstract:
The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical mode…
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The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical model calculations reveal a strong dependence of the exciton lifetime on the thickness of the interface diffusion layer. The lifetime of excitons with a particular optical transition energy varies because this energy is obtained for quantum dots differing in size, shape and composition. The different exciton lifetimes, which result in photoluminescence with non-exponential decay obeying a power-law function, can be described by a phenomenological distribution function, which allows one to explain the photoluminescence decay with one fitting parameter only.
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Submitted 20 July, 2011;
originally announced July 2011.
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Pauli blockade of the electron spin flip in bulk GaAs
Authors:
A. Amo,
L. Vina,
P. Lugli,
C. Tejedor,
A. I. Toropov,
K. S. Zhuravlev
Abstract:
By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of magnitude when the electron kinetic energy varies from 2 to 30 meV. At the high excitation densities and low temperatures of the reported experiments the main spin-fl…
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By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of magnitude when the electron kinetic energy varies from 2 to 30 meV. At the high excitation densities and low temperatures of the reported experiments the main spin-flip mechanism of the conduction band electrons is the Bir-Aronov-Pikus. By means of Monte-Carlo simulations we evidence that phase-space filling effects result in the blocking of the spin flip, yielding an increase of t_sf with excitation density. These effects obtain values of t_sf up to 30 ns at k=0, the longest reported spin-relaxation time in undoped GaAs in the absence of a magnetic field.
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Submitted 23 November, 2006; v1 submitted 7 June, 2006;
originally announced June 2006.
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Interplay of the exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs
Authors:
A. Amo,
M. D. Martin,
L. Vina,
A. I. Toropov,
K. S. Zhuravlev
Abstract:
We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination dominates the onset of the luminescence. We show that the metal-to-insulator transition, induced by temperature and/or excitation density, can be directly monit…
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We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination dominates the onset of the luminescence. We show that the metal-to-insulator transition, induced by temperature and/or excitation density, can be directly monitored by the carrier dynamics and the time-resolved spectral characteristics of the light emission. The dependence on carrier density of the photoluminescence rise time is strongly modified around a lattice temperature of 49 K, corresponding to the exciton binding energy (4.2 meV). In a similar way, the rise-time dependence on lattice temperature undergoes a relatively abrupt change at an excitation density of 120-180x10^15 cm^-3, which is about five times greater than the calculated Mott density in GaAs taking into account many body corrections.
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Submitted 26 October, 2005;
originally announced October 2005.
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Influence of Trapping on the Exciton Dynamics of Al_xGa_1-xAs Films
Authors:
A. Amo,
M. D. Martin,
L. Klopotowski,
L. Vina,
A. I. Toropov,
K. S. Zhuravlev
Abstract:
We present a systematic study on the exciton relaxation in high purity AlGaAs epilayers. The time for the excitonic photoluminescence to reach its maximum intensity (t_max) shows a non-monotonic dependence on excitation density which is attributed to a competition between exciton localization and carrier-carrier scattering. A phenomenological four level model fully describes the influence of exc…
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We present a systematic study on the exciton relaxation in high purity AlGaAs epilayers. The time for the excitonic photoluminescence to reach its maximum intensity (t_max) shows a non-monotonic dependence on excitation density which is attributed to a competition between exciton localization and carrier-carrier scattering. A phenomenological four level model fully describes the influence of exciton localization on t_max. This localization effect is enhanced by the increase of the Al content in the alloy and disappears when localization is hindered by rising the lattice temperature above the exciton trapping energy.
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Submitted 1 October, 2004; v1 submitted 5 July, 2004;
originally announced July 2004.
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Kinetics of exciton photoluminescence in type-II semiconductor superlattices
Authors:
L. S. Braginsky,
M. Yu. Zaharov,
A. M. Gilinsky,
V. V. Preobrazhenskii,
M. A. Putyato,
K. S. Zhuravlev
Abstract:
The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughness.…
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The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughness. Expressions that relate the parameters of the luminescence kinetics with statistical characteristics of the rough interface are obtained. The mean height and length of roughnesses in GaAs/AlAs superlattices are estimated from the experimental data.
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Submitted 24 September, 2000;
originally announced September 2000.
