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Sign reversal of the Hall resistance in the mixed-state of La$_{1.89}$ Ce$_{0.11}$CuO$_{4}$ and La$_{1.89}$Ce$_{0.11}$(Cu$_{0.99}$Co$_{0.01}$)O$_{4} $ thin films
Authors:
K. Jin,
B. X. Wu,
B. Y. Zhu,
B. R. Zhao,
A. Volodin,
J. Vanacken,
A. V. Silhanek,
V. V. Moshchalkov
Abstract:
The transport properties of La$_{1.89}$Ce$_{0.11}$CuO$_{4}$(LCCO) and La$_{1.89}$Ce$_{0.11}$(Cu$_{0.99}$Co$_{0.01}$)O$_{4}$ (LCCO:Co) superconducting thin films are investigated. When the external field $\bf H$ is applied along the crystallographic c-axis, a double sign reversal of the Hall voltage in the mixed state of LCCO:Co thin films is observed whereas a single sign reversal is detected in L…
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The transport properties of La$_{1.89}$Ce$_{0.11}$CuO$_{4}$(LCCO) and La$_{1.89}$Ce$_{0.11}$(Cu$_{0.99}$Co$_{0.01}$)O$_{4}$ (LCCO:Co) superconducting thin films are investigated. When the external field $\bf H$ is applied along the crystallographic c-axis, a double sign reversal of the Hall voltage in the mixed state of LCCO:Co thin films is observed whereas a single sign reversal is detected in LCCO. A double sign reversal of the Hall signal in LCCO can be recovered if the magnetic field is tilted away from the plane of the film. We find that the transition from one to two of the Hall sign reversal coincides with the change in the pinning from strong to weak. This temperature/field induced transition is caused either by the magnetic impurities in LCCO:Co or by the coupling between the pancake vortices and the in-plane Josephson vortices in LCCO. These results are in agreement with early theoretical and numerical predictions.
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Submitted 14 December, 2011;
originally announced December 2011.
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Thickness-induced insufficient oxygen reduction in La(2-x)CexCuO4 thin films
Authors:
B. X. Wu,
K. Jin,
J. Yuan,
H. B. Wang,
T. Hatano,
B. R. Zhao,
B. Y. Zhu
Abstract:
A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport measurements indicate that, with the increase of the film thickness (<100 nm), the residual resistivity increases and the Hall coefficient shifts in the negative dir…
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A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport measurements indicate that, with the increase of the film thickness (<100 nm), the residual resistivity increases and the Hall coefficient shifts in the negative direction. Further more, the X-ray diffraction data reveal that the c-axis lattice constant c0 increases with the decrease of film thickness. These abnormal phenomena can be attributed to the insufficient oxygen reduction in the thin films. Considering the lattice mismatching in the ab-plane between the SrTiO3 substrates and the films, the compressive stress from the substrates may be responsible for the more difficult reduction of the oxygen in the thin films.
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Submitted 15 August, 2009;
originally announced August 2009.
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Preparation of electron-doped La(2-x)CexCuO4 thin films with various Ce doping by dc magnetron sputtering
Authors:
B. X. Wu,
K. Jin,
J. Yuan,
H. B. Wang,
T. Hatano,
B. R. Zhao,
B. Y. Zhu
Abstract:
A series of c-axis oriented electron-doped high-Tc superconducting La(2-x)CexCuO4 thin films, from heavily underdoped x=0.06 to heavily overdoped x=0.19, have been synthesized by dc magnetron sputtering technique on (100) SrTiO3 substrates. The influence of various fabrication conditions, such as the deposition temperature and the deposition rate, etc., on the quality of the thin films has been…
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A series of c-axis oriented electron-doped high-Tc superconducting La(2-x)CexCuO4 thin films, from heavily underdoped x=0.06 to heavily overdoped x=0.19, have been synthesized by dc magnetron sputtering technique on (100) SrTiO3 substrates. The influence of various fabrication conditions, such as the deposition temperature and the deposition rate, etc., on the quality of the thin films has been scrutinized. We find that the quality of the films is less sensitive to the deposition temperature in the overdoped region than that in the underdoped region. In the phase diagram of Tc(x), the superconducting dome indicates that the optimally doping level is at the point x=0.105 with the transition temperature Tc0 = 26.5 K. Further more, both the disappearance of the upturn in the $ρ_{xx}$(T) curve at low temperature under H=10 T and the positive differential Hall coefficient, $R_H'=d ρ_{xy}/dH$, are observed around x = 0.15, implying a possible rearrangement of Fermi surface at this doping level.
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Submitted 15 August, 2009;
originally announced August 2009.
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Ferroelectric switched all-metallic-oxide $p$-$n$ junctions
Authors:
J. Yuan,
H. Wu,
L. Zhao,
K. Jin,
L. X. Cao,
B. Y. Zhu,
S. J. Zhu,
J. P. Zhong,
J. Miao,
H. Yang,
B. Xu,
X. Y. Qi,
Y. Han,
X. G. Qiu,
X. F. Duan,
B. R. Zhao
Abstract:
We report the first formation of the metallic $p$-$n$ junctions, the ferroelectric (Ba,Sr)TiO$_3$ (BST) switched optimally electron-doped ($n$-type) metallic T'-phase superconductor, (La,Ce)$_2$CuO$_4$ (LCCO), and hole-doped ($p$-type) metallic CMR manganite (La,Sr)MnO$_3$ (LSMO) junctions. In contrast with the previous semiconductor $p$-$n$ ($p$-$I$-$n$) junctions which are switched by the buil…
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We report the first formation of the metallic $p$-$n$ junctions, the ferroelectric (Ba,Sr)TiO$_3$ (BST) switched optimally electron-doped ($n$-type) metallic T'-phase superconductor, (La,Ce)$_2$CuO$_4$ (LCCO), and hole-doped ($p$-type) metallic CMR manganite (La,Sr)MnO$_3$ (LSMO) junctions. In contrast with the previous semiconductor $p$-$n$ ($p$-$I$-$n$) junctions which are switched by the built-in field $V_0$, the present metallic oxides $p$-$I$-$n$ junctions are switched by double barrier fields, the built-in field $V_0$, and the ferroelectric reversed polarized field $V_{rp}$, both take together to lead the junctions to possess definite parameters, such as definite negligible reversed current ($10^{-9}$ A), large breakdown voltage ($>$7 V), and ultrahigh rectification ($>2\times10^4$) in the bias voltage 1.2 V to 2.0 V and temperature range from 5 to over 300 K. The related transport feature, barrier size effect, and temperature effect are also observed and defined.
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Submitted 19 November, 2006;
originally announced November 2006.
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Enhanced pinning and proliferation of matching effects in a superconducting film with a Penrose array of magnetic dots
Authors:
A. V. Silhanek,
W. Gillijns,
V. V. Moshchalkov,
B. Y. Zhu,
J. Moonens,
L. H. A. Leunissen
Abstract:
The vortex dynamics in superconducting films deposited on top of a five-fold Penrose array of magnetic dots is studied by means of transport measurements. We show that in the low pinning regime (demagnetized dots) a few periodic and aperiodic matching features coexist. In the strong pinning regime (magnetized dots) a richer structure of unforeseen periodic and aperiodic vortex patterns appear gi…
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The vortex dynamics in superconducting films deposited on top of a five-fold Penrose array of magnetic dots is studied by means of transport measurements. We show that in the low pinning regime (demagnetized dots) a few periodic and aperiodic matching features coexist. In the strong pinning regime (magnetized dots) a richer structure of unforeseen periodic and aperiodic vortex patterns appear giving rise to a clear enhancement of the critical current in a broader field range. Possible stable vortex configurations are determined by molecular dynamics simulations.
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Submitted 7 November, 2006;
originally announced November 2006.
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Coexistence of Superconductivity and Ferromagnetism in Dilute Co-doped $La_{1.89} Ce_{0.11} Cu O_{4\pm\d}$ System
Authors:
K. Jin,
J. Yuan,
L. Zhao,
H. Wu,
X. Y. Qi,
B. Y. Zhu,
L. X. Cao,
X. G. Qiu,
B. Xu,
X. F. Duan,
B. R. Zhao
Abstract:
Thin films of the optimally electron-doped $T'$-phase superconductor La$_{1.89}$Ce$_{0.11}$CuO$_{4\pm \d}$ are investigated by dilute Co doping, formed as La$_{1.89}$Ce$_{0.11}$(Cu$_{1-x}$Co$_{x}$)O$_{4\pm\d}$ (LCCCO) with $x$ = 0.01 -- 0.05. The following results are obtained for the first time: for the whole dilute Co doping range, LCCCO thin films show long-range ferromagnetic ordering at the…
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Thin films of the optimally electron-doped $T'$-phase superconductor La$_{1.89}$Ce$_{0.11}$CuO$_{4\pm \d}$ are investigated by dilute Co doping, formed as La$_{1.89}$Ce$_{0.11}$(Cu$_{1-x}$Co$_{x}$)O$_{4\pm\d}$ (LCCCO) with $x$ = 0.01 -- 0.05. The following results are obtained for the first time: for the whole dilute Co doping range, LCCCO thin films show long-range ferromagnetic ordering at the temperature range from 5 K to 300 K, which is likely due to the RKKY interaction; in the very dilute Co doping, $x$ = 0.01 and 0.02, the superconductivity is maitained, the system shows the coexistence of superconductivity and ferromagnetism in the CuO$_{2}$ plane. This may be based on the nature of the charge carriers in electron-doped high-$T_{c}$ cuprate superconductors.
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Submitted 15 August, 2006;
originally announced August 2006.
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Collective vortex rectification effects in films with a periodic pinning array
Authors:
Clecio C. de Souza Silva,
J. Van de Vondel,
B. Y. Zhu,
M. Morelle,
V. V. Moshchalkov
Abstract:
The vortex ratchet effect has been studied in Al films patterned with square arrays of submicron antidots. We have investigated the transport properties of two sets of samples: (i) asymmetrical antidots where vortices are driven by an unbiased ac current, and (ii) symmetrical antidots where in addition to the ac drive a dc bias was used. For each sample, the rectified (dc) voltage is measured as…
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The vortex ratchet effect has been studied in Al films patterned with square arrays of submicron antidots. We have investigated the transport properties of two sets of samples: (i) asymmetrical antidots where vortices are driven by an unbiased ac current, and (ii) symmetrical antidots where in addition to the ac drive a dc bias was used. For each sample, the rectified (dc) voltage is measured as a function of drive amplitude and frequency, magnetic field, and temperature. As unambiguously shown by our data, the voltage rectification in the asymmetric antidots is induced by the intrinsic asymmetry in the pinning potential created by the antidots, whereas the rectification in the symmetric antidots is induced by the dc bias. In addition, the experiments reveal interesting collective phenomena in the vortex ratchet effect. At fields below the first matching field ($H_1$), the dc voltage--ac drive characteristics present two rectification peaks, which is interpreted as an interplay between the one-dimensional motion of weakly pinned incommensurate vortex rows and the two-dimensional motion of the whole vortex lattice. We also discuss the different dynamical regimes controlling the motion of interstitial and trapped vortices at fields slightly higher than $H_1$ and their implications for the vortex ratchet effect.
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Submitted 28 June, 2005;
originally announced June 2005.
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Vortex rectification effects in films with periodic asymmetric pinning
Authors:
J. Van de Vondel,
C. C. de Souza Silva,
B. Y. Zhu,
M. Morelle,
V. V. Moshchalkov
Abstract:
We study the transport of vortices excited by an ac current in an Al film with an array of nanoengineered asymmetric antidots. The vortex response to the ac current is investigated by detailed measurements of the voltage output as a function of ac current amplitude, magnetic field and temperature. The measurements revealed pronounced voltage rectification effects which are mainly characterized b…
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We study the transport of vortices excited by an ac current in an Al film with an array of nanoengineered asymmetric antidots. The vortex response to the ac current is investigated by detailed measurements of the voltage output as a function of ac current amplitude, magnetic field and temperature. The measurements revealed pronounced voltage rectification effects which are mainly characterized by the two critical depinning forces of the asymmetric potential. The shape of the net dc voltage as a function of the excitation amplitude indicates that our vortex ratchet behaves in a way very different from standard overdamped models. Rather, as demonstrated by the observed output signal, the repinning force, necessary to stop vortex motion, is considerably smaller than the depinning force, resembling the behavior of the so-called inertia ratchets. Calculations based on an underdamped ratchet model provide a very good fit to the experimental data.
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Submitted 7 January, 2005;
originally announced January 2005.
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Enhanced vortex pinning by a composite antidot lattice in a superconducting Pb film
Authors:
A. V. Silhanek,
L. Van Look,
R. Jonckheere,
B. Y. Zhu,
S. Raedts,
V. V. Moshchalkov
Abstract:
The use of artificial defects is known to enhance the superconducting critical parameters of thin films. In the case of conventional superconductors, regular arrays of submicron holes (antidots) substantially increase the critical temperature Tc(H) and critical current Ic(H) for all fields. Using electrical transport measurements, we study the effect of placing an additional small antidot in the…
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The use of artificial defects is known to enhance the superconducting critical parameters of thin films. In the case of conventional superconductors, regular arrays of submicron holes (antidots) substantially increase the critical temperature Tc(H) and critical current Ic(H) for all fields. Using electrical transport measurements, we study the effect of placing an additional small antidot in the unit cell of the array. This composite antidot lattice consists of two interpenetrating antidot square arrays with a different antidot size and the same lattice period. The smaller antidots are located exactly at the centers of the cells of the array of large antidots. We show that the composite antidot lattice can trap a higher number of flux quanta per unit cell inside the antidots, compared to a reference antidot film without the additional small antidots in the center of the cells. As a consequence, the field range in which an enhanced critical current is observed is considerably expanded. Finally, the possible stable vortex lattice patterns at several matching fields are determined by molecular dynamics simulations.
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Submitted 4 December, 2004;
originally announced December 2004.
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Anisotropic vortex pinning in superconductors with a square array of rectangular submicron holes
Authors:
L. Van Look,
B. Y. Zhu,
R. Jonckheere,
B. R. Zhao,
Z. X. Zhao,
V. V. Moshchalkov
Abstract:
We investigate vortex pinning in thin superconducting films with a square array of rectangular submicron holes ("antidots"). Two types of antidots are considered: antidots fully perforating the superconducting film, and "blind antidots", holes that perforate the film only up to a certain depth. In both systems, we observe a distinct anisotropy in the pinning properties, reflected in the critical…
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We investigate vortex pinning in thin superconducting films with a square array of rectangular submicron holes ("antidots"). Two types of antidots are considered: antidots fully perforating the superconducting film, and "blind antidots", holes that perforate the film only up to a certain depth. In both systems, we observe a distinct anisotropy in the pinning properties, reflected in the critical current Ic, depending on the direction of the applied electrical current: parallel to the long side of the antidots or perpendicular to it. Although the mechanism responsible for the effect is very different in the two systems, they both show a higher critical current and a sharper IV-transition when the current is applied along the long side of the rectangular antidots.
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Submitted 11 February, 2003;
originally announced February 2003.
