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Giant superlinear power dependence of photocurrent based on layered Ta$_2$NiS$_5$ photodetector
Authors:
Xianghao Meng,
Yuhan Du,
Wenbin Wu,
Nesta Benno Joseph,
Xing Deng,
Jinjin Wang,
Jianwen Ma,
Zeping Shi,
Binglin Liu,
Yuanji Ma,
Fangyu Yue,
Ni Zhong,
Ping-Hua Xiang,
Cheng Zhang,
Chun-Gang Duan,
Awadhesh Narayan,
Zhenrong Sun,
Junhao Chu,
Xiang Yuan
Abstract:
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power dependence of photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticate…
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Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power dependence of photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. Here, we report the giant superlinear power dependence of photocurrent based on multi-layer Ta$_2$NiS$_5$. While the fabricated photodetector exhibits good sensitivity ($3.1 mS/W$ per square) and fast photoresponse ($31 μ$$s$), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from $1.5 μ$W/$μ$$m^{2}$ to $200 μ$W/$μ$$m^{2}$, the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, a prominent superlinearity is observed with a giant power exponent of $γ=1.5$. The unusual photoresponse can be explained by a two-recombination-center model where the distinct density of states of the recombination centers effectively closes all recombination channels. The fabricated photodetector is integrated into camera for taking photos with enhanced contrast due to the superlinearity. Our work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.
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Submitted 17 April, 2023; v1 submitted 27 August, 2022;
originally announced August 2022.
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Recent advances, perspectives and challenges in ferroelectric synapses
Authors:
Bobo Tian,
Ni Zhong,
Chungang Duan
Abstract:
The multiple ferroelectric polarization tuned by external electric field could be used to simulate the biological synaptic weight. Ferroelectric synaptic devices have two advantages compared with other reported ones: One is the intrinsic switching of ferroelectric domains without invoking of defect migration as in resistive oxides contributes reliable performance in these ferroelectric synapses. A…
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The multiple ferroelectric polarization tuned by external electric field could be used to simulate the biological synaptic weight. Ferroelectric synaptic devices have two advantages compared with other reported ones: One is the intrinsic switching of ferroelectric domains without invoking of defect migration as in resistive oxides contributes reliable performance in these ferroelectric synapses. Another tremendous advantage is the extremely low energy consumption because the ferroelectric polarization is manipulated by electric field which eliminate the Joule heating by current as in magnetic and phase change memory. Ferroelectric synapses are potential for the construction of low-energy and effective brain-like intelligent networks. Here we summarize recent pioneering work of ferroelectric synapses involving the structure of ferroelectric tunnel junctions (FTJs), ferroelectric diodes (FDs) and ferroelectric field effect transistors (FeFETs), respectively, and shed light on future work needed to accelerate their application for efficient neural network.
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Submitted 14 July, 2020;
originally announced July 2020.
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Synaptic Learning and Memory Functions Achieved in Self-rectifying BFO Memristor under Extreme Environmental Temperature
Authors:
Nan Yang,
Zhong-Qi Ren,
Zhao Guan,
Bo-Bo Tian,
Ni Zhong,
Ping-Hua Xiang,
Chun-Gang Duan,
Jun-Hao Chu
Abstract:
Memristors have been intensively studied in recent years as promising building blocks for next-generation non-volatile memory, artificial neural networks and brain-inspired computing systems. Even though the environment adaptability of memristor has been required in many application fields, it has been rarely reported due to the underlying mechanism could become invalid especially at an elevated t…
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Memristors have been intensively studied in recent years as promising building blocks for next-generation non-volatile memory, artificial neural networks and brain-inspired computing systems. Even though the environment adaptability of memristor has been required in many application fields, it has been rarely reported due to the underlying mechanism could become invalid especially at an elevated temperature. Here, we focus on achieving synaptic learning and memory functions in BiFeO3 memristor in a wide range of temperature. We have proved the ferroelectricity of BFO films at a record-high temperature of 500 °C by piezoresponse force microscopy (PFM) measurement. Due to the robust ferroelectricity of BFO thin film, an analog-like resistance switching behavior has been clearly found in a wide range of temperature, which is attributed to the reversal of ferroelectric polarization. Various synaptic functions including long-term potentiation (LTP), depression (LTD), consecutive potentiation/depression (P/D) and spike-timing dependent plasticity (STDP) have been realized from -170 to 300 °C, illustrating their potential for electronic applications even under extreme environmental temperature.
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Submitted 24 February, 2019;
originally announced February 2019.
