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Exact Expansion Formalism for Transport Properties of Heterogeneous Materials Characterized by Arbitrary Continuous Random Fields
Authors:
Liyu Zhong,
Yang Jiao,
Sheng Mao
Abstract:
We derive an exact contrast-expansion formalism for the effective conductivity of heterogeneous materials (media) with local properties described by arbitrary continuous random fields, significantly generalizing the widely used binary-field models. The theory produces a rapidly convergent Neumann-series that, upon Gaussian closure via a Hermite expansion, yields closed-form first-, second- and thi…
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We derive an exact contrast-expansion formalism for the effective conductivity of heterogeneous materials (media) with local properties described by arbitrary continuous random fields, significantly generalizing the widely used binary-field models. The theory produces a rapidly convergent Neumann-series that, upon Gaussian closure via a Hermite expansion, yields closed-form first-, second- and third-order approximations, which achieve percent-level accuracy at first order for isotropic media. For anisotropic media, second-order approximations achieve sub-2% accuracy across a wide range of local property contrasts and correlations. Our formalism provides mathematically rigorous structure-property closures, with significant implications for the discovery and design of novel graded and architected materials with tailored transport properties.
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Submitted 21 May, 2025;
originally announced May 2025.
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Structure-Property Relationship in Disordered Hyperuniform Materials: Microstructure Representation, Field Fluctuations and Effective Properties
Authors:
Liyu Zhong,
Sheng Mao,
Yang Jiao
Abstract:
Disordered hyperuniform (DHU) materials are an emerging class of exotic heterogeneous material systems characterized by a unique combination of disordered local structures and a hidden long-range order, which endow them with unusual physical properties. Here, we consider material systems possessing continuously varying local material properties $\mathcal{K}({\bf x})$ modeled via a random field. We…
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Disordered hyperuniform (DHU) materials are an emerging class of exotic heterogeneous material systems characterized by a unique combination of disordered local structures and a hidden long-range order, which endow them with unusual physical properties. Here, we consider material systems possessing continuously varying local material properties $\mathcal{K}({\bf x})$ modeled via a random field. We devise quantitative microstructure representation of the material systems based on a class of analytical spectral density function ${\tilde χ}_{_\mathcal{K}}({k})$ associated with $\mathcal{K}({\bf x})$, possessing a power-law small-$k$ scaling behavior ${\tilde χ}_{_\mathcal{K}}({k}) \sim k^α$. By controlling the exponent $α$ and using a highly efficient forward generative model, we obtain realizations of a wide spectrum of distinct material microstructures spanning from hyperuniform ($α>0$) to nonhyperuniform ($α=0$) to antihyperuniform ($α<0$) systems. We perform a comprehensive perturbation analysis to quantitatively connect the fluctuations of the local material property to the fluctuations of the resulting physical fields. In the weak-contrast limit, our first-order perturbation theory reveals that the physical fields associated with Class-I hyperuniform materials (characterized by $α\ge 2$) are also hyperuniform, albeit with a lower hyperuniformity exponent ($α-2$). As one moves away from this weak-contrast limit, the fluctuations of the physical field develop a diverging spectral density at the origin. We also establish an end-to-end mapping connecting the spectral density of the local material property to the overall effective conductivity of the material system via numerical homogenization.
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Submitted 9 April, 2025;
originally announced April 2025.
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Electrical and thermal transport properties of kagome metals $A$Ti$_3$Bi$_5$ ($A$ = Rb, Cs)
Authors:
Xintong Chen,
Xiangqi Liu,
Wei Xia,
Xinrun Mi,
Luyao Zhong,
Kunya Yang,
Long Zhang,
Yuhan Gan,
Yan Liu,
Guiwen Wang,
Aifeng Wang,
Yisheng Chai,
Junying Shen,
Xiaolong Yang,
Yanfeng Guo,
Mingquan He
Abstract:
We report electrical and thermal transport properties of single crystalline kagome metals $A$Ti$_3$Bi$_5$ ($A$ = Rb, Cs). Different from the structural similar kagome superconductors $A$V$_3$Sb$_5$, no charge density wave instabilities are found in $A$Ti$_3$Bi$_5$. At low temperatures below 5 K, signatures of superconductivity appear in $A$Ti$_3$Bi$_5$ as seen in magnetization measurements. Howeve…
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We report electrical and thermal transport properties of single crystalline kagome metals $A$Ti$_3$Bi$_5$ ($A$ = Rb, Cs). Different from the structural similar kagome superconductors $A$V$_3$Sb$_5$, no charge density wave instabilities are found in $A$Ti$_3$Bi$_5$. At low temperatures below 5 K, signatures of superconductivity appear in $A$Ti$_3$Bi$_5$ as seen in magnetization measurements. However, bulk superconductivity is not evidenced by specific heat results. Similar to $A$V$_3$Sb$_5$, $A$Ti$_3$Bi$_5$ show nonlinear magnetic field dependence of the Hall effect below about 70 K, pointing to a multiband nature. Unlike $A$V$_3$Sb$_5$ in which phonons and electron-phonon coupling play important roles in thermal transport, the thermal conductivity in $A$Ti$_3$Bi$_5$ is dominated by electronic contributions. Moreover, our calculated electronic structure suggests that van Hove singularities are sitting well above the Fermi energy. Compared with $A$V$_3$Sb$_5$, the absence of charge orders in $A$Ti$_3$Bi$_5$ is closely associated with minor contributions from electron-phonon coupling and/or van Hove singularities.
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Submitted 26 April, 2023; v1 submitted 7 March, 2023;
originally announced March 2023.
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Fast Activation of Graphene with Corrugated Surface and its Role in Improved Aqueous Electrochemical Capacitors
Authors:
Longsheng Zhong,
Chang Wu,
Xiaojing Zhu,
Shulai Lei,
Guijie Liang,
Sepidar Sayyar,
Biao Gao,
Liangxu Lin
Abstract:
In graphene based materials, the energy storage capacity is usually improved by rich porous structures with extremely high surface area. By utilizing surface corrugations, this work shows an alternative strategy to activate graphene materials for large capacitance. We demonstrate how to simply fabricate such activated graphene and how these surface structures helped to realize considerable specifi…
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In graphene based materials, the energy storage capacity is usually improved by rich porous structures with extremely high surface area. By utilizing surface corrugations, this work shows an alternative strategy to activate graphene materials for large capacitance. We demonstrate how to simply fabricate such activated graphene and how these surface structures helped to realize considerable specific capacitance (e.g., electrode capacitance of ~340 F g-1 at 5 mV s-1 and device capacitance of ~ 343 F g-1 at 1.7 A g-1) and power performance (e.g., power density of 50 and 2500 W kg-1 at the energy density of ~10.7 and 1.53 Wh kg-1, respectively) in aqueous system, which are comparable to and even better than those of highly activated graphene materials with ultra-high surface area. This work demonstrates a new path to enhance the capacity of carbon-based materials, which could be developed and combined with other systems for various improved energy storage applications.
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Submitted 5 October, 2021;
originally announced October 2021.
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Role of intermetallic phases in initiation and propagation of intergranular corrosion of an Al-Li-Cu-Mg alloy
Authors:
X. Xu,
M. Hao,
J. Chen,
W. He,
G,
Li,
K. Li,
C. Jiao,
X. L. Zhong,
K. L. Moore,
T. L. Burnett,
X. Zhou
Abstract:
Intermetallic phases in a recently developed Al-Li-Cu-Mg alloy have been investigated to understand their roles in the initiation and propagation processes of intergranular corrosion. Corrosion initiation involves trenching formation in the Al matrix adjacent to the large particles of Al7Cu2(Fe, Mn) phases. These phases containing Li are electrochemically active and susceptible to self-dissolution…
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Intermetallic phases in a recently developed Al-Li-Cu-Mg alloy have been investigated to understand their roles in the initiation and propagation processes of intergranular corrosion. Corrosion initiation involves trenching formation in the Al matrix adjacent to the large particles of Al7Cu2(Fe, Mn) phases. These phases containing Li are electrochemically active and susceptible to self-dissolution via a de-alloying mechanism during corrosion process. The subsurface particles of Al7Cu2(Fe, Mn) and Al20Cu2Mn3 phases act as the internal cathodes for continuous corrosion propagation along the particle-matrix interface and the associated grain boundaries. Corrosion propagation along the particle-matrix interface was facilitated by the anodic dissolution of the surrounding Al matrix due to the micro-galvanic interaction with the cathodic intermetallic phases. In addition, T1 (Al2CuLi) precipitates and the isolated particles of Al7Cu2(Fe, Mn) and Al20Cu2Mn3 phases were dissolved along the path of corrosion propagation. The dissolved metal ions were redeposited through the network of crevice.
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Submitted 29 June, 2021;
originally announced June 2021.
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Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures
Authors:
Yu Song,
Guanghui Zhang,
Xue-Fen Cai,
Yang Liu,
Hang Zhou,
Le Zhong,
Gang Dai,
Xu Zuo,
Su-Huai Wei
Abstract:
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a uniform generation of $E'$ centers in the bulk silica region and their irreversible conversion to $P_b$ centers at the silica-silicon interface. But, the traditio…
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Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a uniform generation of $E'$ centers in the bulk silica region and their irreversible conversion to $P_b$ centers at the silica-silicon interface. But, the traditional model fails to explain experimentally observed dependence of the defect concentrations on dose, especially at low dose rate. Here, we propose that, the generation of $E'$ is decelerated due to the dispersive diffusion of induced holes in the disordered silica and the conversion of $P_b$ is reversible due to recombination-enhanced defect reactions under irradiation. It is shown that the derived analytic model based on these new understandings can consistently explain the fundamental but puzzling dependence of the defect concentrations on dose and dose rate in a wide range.
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Submitted 24 March, 2021; v1 submitted 10 August, 2020;
originally announced August 2020.
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Microwave excitations and hysteretic magnetization dynamics of stripe domain films
Authors:
Meihong Liu,
Qiuyue Li,
Chengkun Song,
Hongmei Feng,
Yawen Song,
Lei Zhong,
Lining Pan,
Chenbo Zhao,
Qiang Li,
Jie Xu,
Shandong Li,
Jianbo Wang,
Qingfang Liu,
Derang Cao
Abstract:
FeNi films with the stripe domain (SD) pattern are prepared by electrodeposition and sputtering methods. The magnetic domain, static magnetic parameters, and quality factor, as well as dynamic properties of the two films, are respectively performed. The results show the magnetizations of the film were dependent on the direction of SD, and the rotation of the SD is lagging behind the magnetization…
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FeNi films with the stripe domain (SD) pattern are prepared by electrodeposition and sputtering methods. The magnetic domain, static magnetic parameters, and quality factor, as well as dynamic properties of the two films, are respectively performed. The results show the magnetizations of the film were dependent on the direction of SD, and the rotation of the SD is lagging behind the magnetization reversal. The microwave properties of the SD emerge dynamic hysteresis before the saturation magnetic field. These microwave properties are selectively excited with acoustic mode, optical mode, and spin-wave mode. The frequency and intensity of different resonance modes of stripe domain are determined by the local magnetization. The magnetization variations and the rotation of SD of different modes are further illuminated by the micromagnetic simulation. The magnetic anisotropy and the resonance intensity of permeability of different modes were finally described by the modified resonance equations.
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Submitted 6 May, 2022; v1 submitted 2 March, 2019;
originally announced March 2019.
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Flux-driven Josephson parametric amplifiers: Hysteretic flux response and nondegenerate gain measurements
Authors:
Stefan Pogorzalek,
Kirill G. Fedorov,
Ling Zhong,
Jan Goetz,
Friedrich Wulschner,
Michael Fischer,
Peter Eder,
Edwar Xie,
Kunihiro Inomata,
Tsuyoshi Yamamoto,
Yasunobu Nakamura,
Achim Marx,
Frank Deppe,
Rudolf Gross
Abstract:
Josephson parametric amplifiers (JPA) have become key devices in quantum science and technology with superconducting circuits. In particular, they can be utilized as quantum-limited amplifiers or as a source of squeezed microwave fields. Here, we report on the detailed measurements of five flux-driven JPAs, three of them exhibiting a hysteretic dependence of the resonant frequency versus the appli…
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Josephson parametric amplifiers (JPA) have become key devices in quantum science and technology with superconducting circuits. In particular, they can be utilized as quantum-limited amplifiers or as a source of squeezed microwave fields. Here, we report on the detailed measurements of five flux-driven JPAs, three of them exhibiting a hysteretic dependence of the resonant frequency versus the applied magnetic flux. We model the measured characteristics by numerical simulations based on the two-dimensional potential landscape of the dc superconducting quantum interference devices (dc-SQUID), which provide the JPA nonlinearity, for a finite screening parameter $β_\mathrm{L}\,{>}\,0$ and demonstrate excellent agreement between the numerical results and the experimental data. Furthermore, we study the nondegenerate response of different JPAs and accurately describe the experimental results with our theory.
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Submitted 28 September, 2016;
originally announced September 2016.
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Valley splitting in the transition-metal dichalcogenides monolayer via atoms adsorption
Authors:
Xiaofang Chen,
Liangshuai Zhong,
Xiao Li,
Jingshan Qi
Abstract:
In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenides monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are adsorbed to the monolayer surface. Zeeman effect arising from the local magnetic moment at transition-metal atom sites lifts the valley degeneracy. Anomalous charge,…
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In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenides monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are adsorbed to the monolayer surface. Zeeman effect arising from the local magnetic moment at transition-metal atom sites lifts the valley degeneracy. Anomalous charge, spin and valley Hall Effects can be accessed due to valley splitting when we can only excite carriers of one valley. The valley splitting depends on the direction of magnetization and thus can be tuned continuously by an external magnetic field. This tunable valley splitting offers a practical avenue for exploring device paradigms based on the spin and valley degrees of freedom.
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Submitted 3 September, 2016;
originally announced September 2016.
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Displacement of propagating squeezed microwave states
Authors:
Kirill G. Fedorov,
L. Zhong,
S. Pogorzalek,
P. Eder,
M. Fischer,
J. Goetz,
E. Xie,
F. Wulschner,
K. Inomata,
T. Yamamoto,
Y. Nakamura,
R. Di Candia,
U. Las Heras,
M. Sanz,
E. Solano,
E. P. Menzel,
F. Deppe,
A. Marx,
R. Gross
Abstract:
Displacement of propagating quantum states of light is a fundamental operation for quantum communication. It enables fundamental studies on macroscopic quantum coherence and plays an important role in quantum teleportation protocols with continuous variables. In our experiments we have successfully implemented this operation for propagating squeezed microwave states. We demonstrate that, even for…
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Displacement of propagating quantum states of light is a fundamental operation for quantum communication. It enables fundamental studies on macroscopic quantum coherence and plays an important role in quantum teleportation protocols with continuous variables. In our experiments we have successfully implemented this operation for propagating squeezed microwave states. We demonstrate that, even for strong displacement amplitudes, there is no degradation of the squeezing level in the reconstructed quantum states. Furthermore, we confirm that path entanglement generated by using displaced squeezed states stays constant over a wide range of the displacement power.
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Submitted 25 January, 2016;
originally announced January 2016.
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Tunable coupling of transmission-line microwave resonators mediated by an rf SQUID
Authors:
F. Wulschner,
J. Goetz,
F. R. Koessel,
E. Hoffmann,
A. Baust,
P. Eder,
M. Fischer,
M. Haeberlein,
M. J. Schwarz,
M. Pernpeintner,
E. Xie,
L. Zhong,
C. W. Zollitsch,
B. Peropadre,
J. -J. Garcia Ripoll,
E. Solano,
K. Fedorov,
E. P. Menzel,
F. Deppe,
A. Marx,
R. Gross
Abstract:
We realize tunable coupling between two superconducting transmission line resonators. The coupling is mediated by a non-hysteretic rf SQUID acting as a flux-tunable mutual inductance between the resonators. From the mode distance observed in spectroscopy experiments, we derive a coupling strength ranging between -320MHz and 37 MHz. In the case where the coupling strength is about zero, the microwa…
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We realize tunable coupling between two superconducting transmission line resonators. The coupling is mediated by a non-hysteretic rf SQUID acting as a flux-tunable mutual inductance between the resonators. From the mode distance observed in spectroscopy experiments, we derive a coupling strength ranging between -320MHz and 37 MHz. In the case where the coupling strength is about zero, the microwave power cross transmission between the two resonators can be reduced by almost four orders of magnitude compared to the case where the coupling is switched on. In addition, we observe parametric amplification by applying a suitable additional drive tone.
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Submitted 28 August, 2015; v1 submitted 27 August, 2015;
originally announced August 2015.
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Spin-boson model with an engineered reservoir in circuit quantum electrodynamics
Authors:
Max Haeberlein,
Frank Deppe,
Andreas Kurcz,
Jan Goetz,
Alexander Baust,
Peter Eder,
Kirill Fedorov,
Michael Fischer,
Edwin P. Menzel,
Manuel J. Schwarz,
Friedrich Wulschner,
Edwar Xie,
Ling Zhong,
Enrique Solano,
Achim Marx,
Juan-José García-Ripoll,
Rudolf Gross
Abstract:
A superconducting qubit coupled to an open transmission line represents an implementation of the spin-boson model with a broadband environment. We show that this environment can be engineered by introducing partial reflectors into the transmission line, allowing to shape the spectral function, J(ω), of the spin-boson model. The spectral function can be accessed by measuring the resonance fluoresce…
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A superconducting qubit coupled to an open transmission line represents an implementation of the spin-boson model with a broadband environment. We show that this environment can be engineered by introducing partial reflectors into the transmission line, allowing to shape the spectral function, J(ω), of the spin-boson model. The spectral function can be accessed by measuring the resonance fluorescence of the qubit, which provides information on both the engineered environment and the coupling between qubit and transmission line. The spectral function of a transmission line without partial reflectors is found to be Ohmic over a wide frequency range, whereas a peaked spectral density is found for the shaped environment. Our work lays the ground for future quantum simulations of other, more involved, impurity models with superconducting circuits.
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Submitted 30 June, 2015;
originally announced June 2015.
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Quantum teleportation of propagating quantum microwaves
Authors:
R. Di Candia,
K. G. Fedorov,
L. Zhong,
S. Felicetti,
E. P. Menzel,
M. Sanz,
F. Deppe,
A. Marx,
R. Gross,
E. Solano
Abstract:
Propagating quantum microwaves have been proposed and successfully implemented to generate entanglement, thereby establishing a promising platform for the realisation of a quantum communication channel. However, the implementation of quantum teleportation with photons in the microwave regime is still absent. At the same time, recent developments in the field show that this key protocol could be fe…
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Propagating quantum microwaves have been proposed and successfully implemented to generate entanglement, thereby establishing a promising platform for the realisation of a quantum communication channel. However, the implementation of quantum teleportation with photons in the microwave regime is still absent. At the same time, recent developments in the field show that this key protocol could be feasible with current technology, which would pave the way to boost the field of microwave quantum communication. Here, we discuss the feasibility of a possible implementation of microwave quantum teleportation in a realistic scenario with losses. Furthermore, we propose how to implement quantum repeaters in the microwave regime without using photodetection, a key prerequisite to achieve long distance entanglement distribution.
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Submitted 14 January, 2016; v1 submitted 22 June, 2015;
originally announced June 2015.
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Ultrastrong coupling in two-resonator circuit QED
Authors:
A. Baust,
E. Hoffmann,
M. Haeberlein,
M. J. Schwarz,
P. Eder,
J. Goetz,
F. Wulschner,
E. Xie,
L. Zhong,
F. Quijandria,
D. Zueco,
J. -J. Garcia Ripoll,
L. Garcia-Alvarez,
G. Romero,
E. Solano,
K. G. Fedorov,
E. P. Menzel,
F. Deppe,
A. Marx,
R. Gross
Abstract:
We report on ultrastrong coupling between a superconducting flux qubit and a resonant mode of a system comprised of two superconducting coplanar stripline resonators coupled galvanically to the qubit. With a coupling strength as high as 17% of the mode frequency, exceeding that of previous circuit quantum electrodynamics experiments, we observe a pronounced Bloch-Siegert shift. The spectroscopic r…
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We report on ultrastrong coupling between a superconducting flux qubit and a resonant mode of a system comprised of two superconducting coplanar stripline resonators coupled galvanically to the qubit. With a coupling strength as high as 17% of the mode frequency, exceeding that of previous circuit quantum electrodynamics experiments, we observe a pronounced Bloch-Siegert shift. The spectroscopic response of our multimode system reveals a clear breakdown of the Jaynes-Cummings model. In contrast to earlier experiments, the high coupling strength is achieved without making use of an additional inductance provided by a Josephson junction.
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Submitted 23 December, 2014;
originally announced December 2014.
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Tunable and Switchable Coupling Between Two Superconducting Resonators
Authors:
A. Baust,
E. Hoffmann,
M. Haeberlein,
M. J. Schwarz,
P. Eder,
E. P. Menzel,
K. Fedorov,
J. Goetz,
F. Wulschner,
E. Xie,
L. Zhong,
F. Quijandria,
B. Peropadre,
D. Zueco,
J. -J. Garcia Ripoll,
E. Solano,
F. Deppe,
A. Marx,
R. Gross
Abstract:
We realize a device allowing for tunable and switchable coupling between two superconducting resonators mediated by an artificial atom. For the latter, we utilize a persistent current flux qubit. We characterize the tunable and switchable coupling in frequency and time domain and find that the coupling between the relevant modes can be varied in a controlled way. Specifically, the coupling can be…
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We realize a device allowing for tunable and switchable coupling between two superconducting resonators mediated by an artificial atom. For the latter, we utilize a persistent current flux qubit. We characterize the tunable and switchable coupling in frequency and time domain and find that the coupling between the relevant modes can be varied in a controlled way. Specifically, the coupling can be tuned by adjusting the flux through the qubit loop or by saturating the qubit. Our time domain measurements allow us to find parameter regimes for optimal switch performance with respect to qubit drive power and the dynamic range of the resonator input power.
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Submitted 15 January, 2015; v1 submitted 8 May, 2014;
originally announced May 2014.
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Dual-Path Methods for Propagating Quantum Microwaves
Authors:
R. Di Candia,
E. P. Menzel,
L. Zhong,
F. Deppe,
A. Marx,
R. Gross,
E. Solano
Abstract:
We study quantum state tomography, entanglement detection, and channel noise reconstruction of propagating quantum microwaves via dual-path methods. The presented schemes make use of the following key elements: propagation channels, beam splitters, linear amplifiers, and field quadrature detectors. Remarkably, our methods are tolerant to the ubiquitous noise added to the signals by phase-insensiti…
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We study quantum state tomography, entanglement detection, and channel noise reconstruction of propagating quantum microwaves via dual-path methods. The presented schemes make use of the following key elements: propagation channels, beam splitters, linear amplifiers, and field quadrature detectors. Remarkably, our methods are tolerant to the ubiquitous noise added to the signals by phase-insensitive microwave amplifiers. Furthermore, we analyze our techniques with numerical examples and experimental data, and compare them with the scheme developed in Eichler $et$ $al$ (2011 Phys. Rev. Lett. 106 220503; 2011 Phys. Rev. Lett. 107 113601), based on a single path. Our methods provide key toolbox components that may pave the way towards quantum microwave teleportation and communication protocols.
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Submitted 8 January, 2014; v1 submitted 14 August, 2013;
originally announced August 2013.
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Squeezing with a flux-driven Josephson parametric amplifier
Authors:
L. Zhong,
E. P. Menzel,
R. Di Candia,
P. Eder,
M. Ihmig,
A. Baust,
M. Haeberlein,
E. Hoffmann,
K. Inomata,
T. Yamamoto,
Y. Nakamura,
E. Solano,
F. Deppe,
A. Marx,
R. Gross
Abstract:
Josephson parametric amplifiers (JPA) are promising devices for applications in circuit quantum electrodynamics (QED) and for studies on propagating quantum microwaves because of their good noise performance. In this work, we present a systematic characterization of a flux-driven JPA at millikelvin temperatures. In particular, we study in detail its squeezing properties by two different detection…
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Josephson parametric amplifiers (JPA) are promising devices for applications in circuit quantum electrodynamics (QED) and for studies on propagating quantum microwaves because of their good noise performance. In this work, we present a systematic characterization of a flux-driven JPA at millikelvin temperatures. In particular, we study in detail its squeezing properties by two different detection techniques. With the homodyne setup, we observe squeezing of vacuum fluctuations by superposing signal and idler bands. For a quantitative analysis we apply dual-path cross-correlation techniques to reconstruct the Wigner functions of various squeezed vacuum and thermal states. At 10 dB signal gain, we find 4.9+-0.2 dB squeezing below vacuum. In addition, we discuss the physics behind squeezed coherent microwave fields. Finally, we analyze the JPA noise temperature in the degenerate mode and find a value smaller than the standard quantum limit for phase-insensitive amplifiers.
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Submitted 27 July, 2013;
originally announced July 2013.
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Path Entanglement of Continuous-Variable Quantum Microwaves
Authors:
E. P. Menzel,
R. Di Candia,
F. Deppe,
P. Eder,
L. Zhong,
M. Ihmig,
M. Haeberlein,
A. Baust,
E. Hoffmann,
D. Ballester,
K. Inomata,
T. Yamamoto,
Y. Nakamura,
E. Solano,
A. Marx,
R. Gross
Abstract:
Path entanglement constitutes an essential resource in quantum information and communication protocols. Here, we demonstrate frequency-degenerate entanglement between continuous-variable quantum microwaves propagating along two spatially separated paths. We combine a squeezed and a vacuum state using a microwave beam splitter. Via correlation measurements, we detect and quantify the path entanglem…
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Path entanglement constitutes an essential resource in quantum information and communication protocols. Here, we demonstrate frequency-degenerate entanglement between continuous-variable quantum microwaves propagating along two spatially separated paths. We combine a squeezed and a vacuum state using a microwave beam splitter. Via correlation measurements, we detect and quantify the path entanglement contained in the beam splitter output state. Our experiments open the avenue to quantum teleportation, quantum communication, or quantum radar with continuous variables at microwave frequencies.
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Submitted 16 October, 2012;
originally announced October 2012.
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In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch
Authors:
Jun Yao,
Lin Zhong,
Douglas Natelson,
James M. Tour
Abstract:
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with stru…
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The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence to the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices.
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Submitted 17 October, 2011;
originally announced October 2011.
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Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies
Authors:
Jun Yao,
Lin Zhong,
Douglas Natelson,
James M. Tour
Abstract:
Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current hysteresis intrinsic to a thin layer of SiOx. These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting t…
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Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current hysteresis intrinsic to a thin layer of SiOx. These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiOx as a component. The actual switching can be the result of SiOx and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.
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Submitted 23 October, 2010;
originally announced October 2010.
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Resistive switching in nanogap systems on SiO2 substrates
Authors:
Jun Yao,
Lin Zhong,
Zengxing Zhang,
Tao He,
Zhong Jin,
Patrick J. Wheeler,
Douglas Natelson,
James M. Tour
Abstract:
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same charact…
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Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the high ON/OFF ratio (10E5), fast switching time (2 us, test limit), durable cycles demonstrated show promising memory properties. The intermediate states observed reveal the filamentary conduction nature.
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Submitted 27 June, 2009;
originally announced June 2009.
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Etching-dependent reproducible memory switching in vertical SiO2 structures
Authors:
J. Yao,
L. Zhong,
D. Natelson,
J. M. Tour
Abstract:
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 $μ$s) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in struct…
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Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 $μ$s) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 10$^{4}$ were demonstrated.
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Submitted 25 November, 2008;
originally announced November 2008.
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Spin entanglement induced by spin-orbit interactions in coupled quantum dots
Authors:
Nan Zhao,
L. Zhong,
Jia-Lin Zhu,
C. P. Sun
Abstract:
We theoretically explore the possibility of creating spin quantum entanglement in a system of two electrons confined respectively in two vertically coupled quantum dots in the presence of Rashba type spin-orbit coupling. We find that the system can be described by a generalized Jaynes - Cummings model of two modes bosons interacting with two spins. The lower excitation states of this model are c…
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We theoretically explore the possibility of creating spin quantum entanglement in a system of two electrons confined respectively in two vertically coupled quantum dots in the presence of Rashba type spin-orbit coupling. We find that the system can be described by a generalized Jaynes - Cummings model of two modes bosons interacting with two spins. The lower excitation states of this model are calculated to reveal the underlying physics of the far infrared absorption spectra. The analytic perturbation approach shows that an effective transverse coupling of spins can be obtained by eliminating the orbital degrees of freedom in the large detuning limit. Here, the orbital degrees of freedom of the two electrons, which are described by two modes of bosons, serve as a quantized data bus to exchange the quantum information between two electrons. Then a nontrivial two-qubit logic gate is realized and spin entanglement between the two electrons is created by virtue of spin-orbit coupling.
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Submitted 17 March, 2006; v1 submitted 14 March, 2006;
originally announced March 2006.
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Analogue of Cavity QED for Coupling between Spin and Nanomechanical Resonator
Authors:
Fei Xue,
Ling Zhong,
Yong Li,
C. P. Sun
Abstract:
We describe a cavity QED analogue for the coupling system of a spin and a nanomechanical resonator with a magnetic tip. For the quantized nanomechanical resonator, a spin-boson model for this coupling system can refer to a Jaynes-Cummings(JC) or an anti-JC model. These observations predict some quantum optical phenomena, such as squeezing and "collapse-revival" in the single oscillation mode of…
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We describe a cavity QED analogue for the coupling system of a spin and a nanomechanical resonator with a magnetic tip. For the quantized nanomechanical resonator, a spin-boson model for this coupling system can refer to a Jaynes-Cummings(JC) or an anti-JC model. These observations predict some quantum optical phenomena, such as squeezing and "collapse-revival" in the single oscillation mode of the nanomechanical resonator when it is initially prepared in the quasi-classical state. By modulating the phase of RF magnetic field one can switch the system between the JC and anti-JC model, which provides a potential protocol for the detection of the single spin. A damping mechanism is also analyzed.
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Submitted 7 March, 2006; v1 submitted 27 February, 2006;
originally announced February 2006.
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Effects of Contrarians in the Minority Game
Authors:
Li-Xin Zhong,
Da-Fang Zheng,
Bo Zheng,
P. M. Hui
Abstract:
We study the effects of the presence of contrarians in an agent-based model of competing populations. Contrarians are common in societies. These contrarians are agents who deliberately prefer to hold an opinion that is contrary to the prevailing idea of the commons or normal agents. Contrarians are introduced within the context of the Minority Game (MG), which is a binary model for an evolving a…
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We study the effects of the presence of contrarians in an agent-based model of competing populations. Contrarians are common in societies. These contrarians are agents who deliberately prefer to hold an opinion that is contrary to the prevailing idea of the commons or normal agents. Contrarians are introduced within the context of the Minority Game (MG), which is a binary model for an evolving and adaptive population of agents competing for a limited resource. Results of numerical simulations reveal that the average success rate among the agents depends non-monotonically on the fraction $a_{c}$ of contrarians. For small $a_{c}$, the contrarians systematically outperform the normal agents by avoiding the crowd effect and enhance the overall success rate. For high $a_{c}$, the anti-persistent nature of the MG is disturbed and the few normal agents outperform the contrarians. Qualitative discussion and analytic results for the small $a_{c}$ and high $a_{c}$ regimes are also presented, and the crossover behavior between the two regimes is discussed.
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Submitted 20 December, 2004;
originally announced December 2004.
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Electron dephasing near zero temperature: an experimental review
Authors:
J. J. Lin,
T. J. Li,
Y. L. Zhong
Abstract:
The behavior of the electron dephasing time near zero temperature, $τ_φ^0$, has recently attracted vigorous attention. This renewed interest is primarily concerned with whether $τ_φ^0$ should reach a finite or an infinite value as $T \to$ 0. While it is accepted that $τ_φ^0$ should diverge if there exists only electron-electron (electron-phonon) scattering, several recent measurements have found…
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The behavior of the electron dephasing time near zero temperature, $τ_φ^0$, has recently attracted vigorous attention. This renewed interest is primarily concerned with whether $τ_φ^0$ should reach a finite or an infinite value as $T \to$ 0. While it is accepted that $τ_φ^0$ should diverge if there exists only electron-electron (electron-phonon) scattering, several recent measurements have found that $τ_φ^0$ depends only very weakly on temperature, if at all, when $T$ is sufficiently low. This article discusses the current experimental status of "the saturation problem", and concludes that the origin(s) for this widely observed saturation are still unresolved.
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Submitted 11 September, 2002;
originally announced September 2002.
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Effect of microstructures on the electron-phonon interaction in the disordered metals Pd$_{60}$Ag$_{40}$
Authors:
Y. L. Zhong,
J. J. Lin,
L. Y. Kao
Abstract:
Using the weak-localization method, we have measured the electron-phonon scattering times $τ_{ep}$ in Pd$_{60}$Ag$_{40}$ thick films prepared by DC- and RF-sputtering deposition techniques. In both series of samples, we find an anomalous $1/τ_{ep} \propto T^2\ell$ temperature and disorder dependence, where $\ell$ is the electron elastic mean free path. This anomalous behavior cannot be explained…
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Using the weak-localization method, we have measured the electron-phonon scattering times $τ_{ep}$ in Pd$_{60}$Ag$_{40}$ thick films prepared by DC- and RF-sputtering deposition techniques. In both series of samples, we find an anomalous $1/τ_{ep} \propto T^2\ell$ temperature and disorder dependence, where $\ell$ is the electron elastic mean free path. This anomalous behavior cannot be explained in terms of the current concepts for the electron-phonon interaction in impure conductors. Our result also reveals that the strength of the electron-phonon coupling is much stronger in the DC than RF sputtered films, suggesting that the electron-phonon interaction not only is sensitive to the total level of disorder but also is sensitive to the microscopic quality of the disorder.
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Submitted 10 September, 2002;
originally announced September 2002.
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Effect of annealing on electron dephasing in three-dimensional polycrystalline metals
Authors:
J. J. Lin,
Y. L. Zhong,
T. J. Li
Abstract:
We have studied the effect of thermal annealing on electron dephasing times $τ_φ$ in three-dimensional polycrystalline metals. Measurements are performed on as-sputtered and annealed AuPd and Sb thick films, using weak-localization method. In all samples, we find that $τ_φ$ possesses an extremely weak temperature dependence as $T \to 0$. Our results show that the effect of annealing is non-unive…
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We have studied the effect of thermal annealing on electron dephasing times $τ_φ$ in three-dimensional polycrystalline metals. Measurements are performed on as-sputtered and annealed AuPd and Sb thick films, using weak-localization method. In all samples, we find that $τ_φ$ possesses an extremely weak temperature dependence as $T \to 0$. Our results show that the effect of annealing is non-universal, and it depends strongly on the amount of disorder quenched in the microstructures during deposition. The observed "saturation" behavior of $τ_φ$ cannot be easily explained by magnetic scattering. We suggest that the issue of saturation can be better addressed in three-dimensional, rather than lower-dimensional, structures.
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Submitted 21 December, 2001;
originally announced December 2001.
