Showing 1–50 of 88 results for author: Zhong, H

Observation of quasi-steady dark excitons and gap phase in a doped semiconductor

Authors: Shangkun Mo, Yunfei Bai, Chunlong Wu, Xingxia Cui, Guangqiang Mei, Qiang Wan, Renzhe Li, Cao Peng, Keming Zhao, Dingkun Qin, Shuming Yu, Hao Zhong, Xingzhe Wang, Enting Li, Yiwei Li, Limin Cao, Min Feng, Sheng Meng, Nan Xu

Abstract: Exciton plays an important role in optics and optics-related behaviors and leads to novel correlated phases like charge order, exciton insulator, and exciton-polariton condensation. Dark exciton shows distinct properties from bright one. However, it cannot be directly detected by conventional optic measurements. The electronic modulation effect of dark excitons in quasi-equilibrium distribution, c… ▽ More Exciton plays an important role in optics and optics-related behaviors and leads to novel correlated phases like charge order, exciton insulator, and exciton-polariton condensation. Dark exciton shows distinct properties from bright one. However, it cannot be directly detected by conventional optic measurements. The electronic modulation effect of dark excitons in quasi-equilibrium distribution, critical for electronic devices in working status, is still elusive. Here, using angle-resolved photoemission spectroscopy, we report creating, detecting, and controlling dark excitons in the quasi-equilibrium distribution in a doped semiconductor SnSe2. Surprisingly, we observe an excitonic gap phase, with a conduction band opening an anisotropic gap. Our results broaden the scope of dark excitons, extending their studies from the picosecond timescale in the ultrafast photoemission process to conditions occurring under quasi-equilibrium. We reveal the light-matter interaction in the engineering of electronic structures and provide a new way to realize the excitonic gap phase in semiconductors with large band gaps. △ Less

Submitted 11 July, 2025; originally announced July 2025.

Comments: 16 pages, 5 figures

Thermal Conductivity above 2000 W/m.K in Boron Arsenide by Nanosecond Transducer-less Time-Domain Thermoreflectance

Authors: Hong Zhong, Ying Peng, Feng Lin, Ange Benise Niyikiza, Fengjiao Pan, Chengzhen Qin, Jinghong Chen, Viktor G. Hadjiev, Liangzi Deng, Zhifeng Ren, Jiming Bao

Abstract: Cubic boron arsenide (c-BAs) has been theoretically predicted to exhibit thermal conductivity \k{appa} comparable to that of diamond, yet experimental measurements have plateaued at ~1300W/mK. We report room-temperature \k{appa} exceeding 2000W/mK in c-BAs, on par with single-crystal diamond. This finding is enabled by high-quality single crystals and a newly developed nanosecond, transducer-less… ▽ More Cubic boron arsenide (c-BAs) has been theoretically predicted to exhibit thermal conductivity \k{appa} comparable to that of diamond, yet experimental measurements have plateaued at ~1300W/mK. We report room-temperature \k{appa} exceeding 2000W/mK in c-BAs, on par with single-crystal diamond. This finding is enabled by high-quality single crystals and a newly developed nanosecond, transducer-less time-domain thermoreflectance technique that allows spatial mapping of \k{appa} without metal transducers. Thermal conductivity correlates with crystal quality, as evidenced by stronger photoluminescence and longer photoluminescence lifetimes. However, the observed nanosecond lifetimes remain shorter than expected for an indirect bandgap semiconductor, suggesting room for further crystal quality improvement and higher \k{appa}. These results challenge current theoretical models and highlight c-BAs as a promising material for next-generation electronics. △ Less

Submitted 23 May, 2025; originally announced May 2025.

Comments: 14 pages, 4 figures

Laser, Vacuum, and Gas Reaction Chamber for Operando Measurements at NSLS-II's 28-ID-2

Authors: Lauren Y. Moghimi, Patrik Johansson, Subhechchha Paul, Yifan Wang, Sara Irvine, Remington Graham, Zane Taylor, Angel A. Martinez, John T. Markert, John Trunk, Hui Zhong, Jianming Bai, Sanjit Ghose, Leora Dresselhaus-Marais

Abstract: We present a laser reaction chamber that we developed for in-situ/operando X-ray diffraction measurements at the NSLS-II 28-ID-2 XPD (X-Ray Powder Diffraction) beamline. This chamber allows for rapid and dynamic sample heating under specialized gas environments, spanning ambient conditions down to vacuum pressures. We demonstrate the capabilities of this setup through two applications: laser-drive… ▽ More We present a laser reaction chamber that we developed for in-situ/operando X-ray diffraction measurements at the NSLS-II 28-ID-2 XPD (X-Ray Powder Diffraction) beamline. This chamber allows for rapid and dynamic sample heating under specialized gas environments, spanning ambient conditions down to vacuum pressures. We demonstrate the capabilities of this setup through two applications: laser-driven heating in polycrystalline iron oxide and in single crystal WTe2. Our measurements reveal the ability to resolve chemical reaction kinetics over minutes with 1-s time resolution. This setup advances opportunities for in-situ/operando XRD studies in both bulk and single crystal materials. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Alcohol induced surface charging of colloidal quantum dots for controllable electrophoretic deposition processing

Authors: Jiaming Su, Kai Gu, Qingchen Wang, Kaiying Min, Zhiyuan Gao, Haizheng Zhong

Abstract: In this work, we report an alcohol-induced surface charging route of colloidal QDs to achieve controllable electrophoretic deposition processing. By adding a fixed amounts of alcohols into a preformed quantum dots solution in non-polar solvents, the colloidal quantum dots can be positively charged, and then deposited on negative electrode under applied electric field. The surface charging of PbSe… ▽ More In this work, we report an alcohol-induced surface charging route of colloidal QDs to achieve controllable electrophoretic deposition processing. By adding a fixed amounts of alcohols into a preformed quantum dots solution in non-polar solvents, the colloidal quantum dots can be positively charged, and then deposited on negative electrode under applied electric field. The surface charging of PbSe quantum dots was investigated by zeta potential, nuclear magnetic resonance, Fourier transform infrared spectroscopy, and discrete Fourier transform calculations. It was found that the zeta potential of oleate acid capped PbSe QDs increases from +1.6 mV to +13.4 mV with the amount of alcohol solvent increasing. The alcohol-induced zeta potential increasing can be explained to the electron cloud shift of active hydrogen mediated by intermolecular hydrogen bonds between carboxy acid and alcohol. Considering the influence of surface charging of quantum dots on their dispersibility, we describe the microscopic mechanism of alcohol-induced electrophoretic deposition processing. Furthermore, we developed a size-selective separation protocol by controlling alcohol-induced electrophoretic deposition processing. △ Less

Submitted 12 May, 2025; originally announced May 2025.

Inverse ac Josephson effect in Josephson diode

Authors: Huarong Zhong, Zhi Wang

Abstract: We study the Josephson junction where nonreciprocal critical current was induced by the interplay of the $4π$-periodic and $2π$-periodic current-phase relation of the junction. We take the model of a topological junction which serves as a Josephson diode with nonreciprocal critical currents. For this Josephson diode, we demonstrate an inverse ac Josephson effect where an effective dc voltage is in… ▽ More We study the Josephson junction where nonreciprocal critical current was induced by the interplay of the $4π$-periodic and $2π$-periodic current-phase relation of the junction. We take the model of a topological junction which serves as a Josephson diode with nonreciprocal critical currents. For this Josephson diode, we demonstrate an inverse ac Josephson effect where an effective dc voltage is induced by a pure ac driving current. We show that this inverse ac Josephson effect originates from the voltage rectification by the nonreciprocal critical current of the system. We explore the dependence of the induced dc voltage on the amplitude and frequency of the ac driving current and reveal the optimized condition for the inverse ac Josephson effect. △ Less

Submitted 13 April, 2025; originally announced April 2025.

Comments: 7 pages, 6 figures

Determining 3D atomic coordinates of light-element quantum materials using ptychographic electron tomography

Authors: Na Yeon Kim, Hanfeng Zhong, Jianhua Zhang, Colum M. O'Leary, Yuxuan Liao, Ji Zou, Haozhi Sha, Minh Pham, Weiyi Li, Yakun Yuan, Ji-Hoon Park, Dennis Kim, Huaidong Jiang, Jing Kong, Miaofang Chi, Jianwei Miao

Abstract: Understanding quantum materials at the atomic scale requires precise 3D characterization of atomic positions and crystal defects. However, resolving the 3D structure of light-element materials (Z <= 8) remains a major challenge due to their low contrast and beam damage in electron microscopy. Here, we demonstrate ptychographic atomic electron tomography (pAET), achieving sub-angstrom 3D atomic pre… ▽ More Understanding quantum materials at the atomic scale requires precise 3D characterization of atomic positions and crystal defects. However, resolving the 3D structure of light-element materials (Z <= 8) remains a major challenge due to their low contrast and beam damage in electron microscopy. Here, we demonstrate ptychographic atomic electron tomography (pAET), achieving sub-angstrom 3D atomic precision (11 pm) in light elements, marking the first-ever experimental realization of 3D atomic imaging for light-element materials. Using twisted bilayer graphene as a model system, we determine the 3D atomic coordinates of individual carbon atoms, revealing chiral lattice distortions driven by van der Waals interactions that exhibit meron-like and skyrmion-like structures. These findings provide direct insights into the interplay between 3D chiral lattice deformation and electronic properties in moire materials. Beyond TBG, pAET offers a transformative approach for 3D atomic-scale imaging across quantum materials, 2D heterostructures, functional oxides, and energy materials. △ Less

Submitted 10 April, 2025; originally announced April 2025.

Selective Kondo screening and strange metallicity by sliding Dirac semimetals

Authors: Hanting Zhong, Shuxiang Yang, Chao Cao, Xiao-Yong Feng, Jianhui Dai

Abstract: Kondo screening of local moments in normal metals typically leads to hybridized conduction and valence bands separated by a Kondo gap, resulting in an insulating state at half-band filling. We show a dramatic change of this scenario in a Dirac-semimetal-based correlated system -- a bilayer honeycomb lattice heterostructure where the local moment lattice is stacked on a Dirac semimetal breaking the… ▽ More Kondo screening of local moments in normal metals typically leads to hybridized conduction and valence bands separated by a Kondo gap, resulting in an insulating state at half-band filling. We show a dramatic change of this scenario in a Dirac-semimetal-based correlated system -- a bilayer honeycomb lattice heterostructure where the local moment lattice is stacked on a Dirac semimetal breaking the inversion symmetry. This system is modeled by an extended Anderson honeycomb lattice involving the real-space dependence of major interlayer hybridization parameters on the relative sliding distance along the armchair direction. First, we unveil the multiple Kondo scales and the successive Kondo breakdown transitions in this correlated heterostructure under sliding. Second, we demonstrate the existence of a genuine selective Kondo screening phase which is stabilized near the A-B stack pattern and is accessible by applying the interlayer voltage. Third, we find a nearly flat hybridized band located concomitantly within the Kondo gap, resulting in an unprecedented metallic state at the half-band filling. This unconventional heavy fermion state is characterized by the violation of Luttinger theorem and the appearance of a Van Hove singularity at the Fermi energy. The general sliding-driven band structure landscape and the implications of our results for the broad context of multiorbital Kondo physics are briefly discussed. △ Less

Submitted 9 April, 2025; originally announced April 2025.

Comments: 19 pages, 15 figures (including 4 appendices)

Light-field dressing of transient photo-excited states above $E_F$

Authors: Fei Wang, Wanying Chen, Changhua Bao, Tianyun Lin, Haoyuan Zhong, Hongyun Zhang, Shuyun Zhou

Abstract: Time-periodic light-field provides an emerging pathway for dynamically engineering quantum materials by forming hybrid states between photons and Bloch electrons. So far, experimental progress on light-field dressed states has been mainly focused on the occupied states, however, it is unclear if the transient photo-excited states above the Fermi energy $E_F$ can also be dressed, leaving the dynami… ▽ More Time-periodic light-field provides an emerging pathway for dynamically engineering quantum materials by forming hybrid states between photons and Bloch electrons. So far, experimental progress on light-field dressed states has been mainly focused on the occupied states, however, it is unclear if the transient photo-excited states above the Fermi energy $E_F$ can also be dressed, leaving the dynamical interplay between photo-excitation and light-field dressing elusive. Here, we provide direct experimental evidence for light-field dressing of the transient photo-excited surface states above $E_F$, which exhibits distinct dynamics with a delay response as compared to light-field dressed states below $E_F$. Our work reveals the dual roles of the pump pulse in both photo-excitation and light-field dressing, providing a more comprehensive picture with new insights on the light-induced manipulation of transient electronic states. △ Less

Submitted 9 April, 2025; originally announced April 2025.

Journal ref: Phys. Rev. Lett. 134, 146401 (2025)

Floquet-Volkov interference in a semiconductor

Authors: Changhua Bao, Haoyuan Zhong, Benshu Fan, Xuanxi Cai, Fei Wang, Shaohua Zhou, Tianyun Lin, Hongyun Zhang, Pu Yu, Peizhe Tang, Wenhui Duan, Shuyun Zhou

Abstract: Intense light-field can dress both Bloch electrons inside crystals and photo-emitted free electrons in the vacuum, dubbed as Floquet and Volkov states respectively. These quantum states can further interfere coherently, modulating light-field dressed states. Here, we report experimental evidence of the Floquet-Volkov interference in a semiconductor - black phosphorus. A highly asymmetric modulatio… ▽ More Intense light-field can dress both Bloch electrons inside crystals and photo-emitted free electrons in the vacuum, dubbed as Floquet and Volkov states respectively. These quantum states can further interfere coherently, modulating light-field dressed states. Here, we report experimental evidence of the Floquet-Volkov interference in a semiconductor - black phosphorus. A highly asymmetric modulation of the spectral weight is observed for the Floquet-Volkov states, and such asymmetry can be further controlled by rotating the pump polarization. Our work reveals the quantum interference between different light-field dressed electronic states, providing insights for material engineering on the ultrafast timescale. △ Less

Submitted 11 February, 2025; originally announced February 2025.

Journal ref: Phys. Rev. B 111, L081106 (2025)

Epitaxial strain tuning of electronic and spin excitations in La$_3$Ni$_2$O$_7$ thin films

Authors: Hengyang Zhong, Bo Hao, Yuan Wei, Zhijia Zhang, Ruixian Liu, Xinru Huang, Xiao-Sheng Ni, Marli dos Reis Cantarino, Kun Cao, Yuefeng Nie, Thorsten Schmitt, Xingye Lu

Abstract: The discovery of ambient-pressure superconductivity with $T_{c,\text{onset}} > 40$ K in La$_3$Ni$_2$O$_7$ (LNO) thin films under in-plane biaxial compressive strain underscores the pivotal role of epitaxial strain in tuning exotic electronic states and provides a unique platform for investigating the superconducting mechanisms in nickelate superconductors. Here, we use resonant inelastic X-ray sca… ▽ More The discovery of ambient-pressure superconductivity with $T_{c,\text{onset}} > 40$ K in La$_3$Ni$_2$O$_7$ (LNO) thin films under in-plane biaxial compressive strain underscores the pivotal role of epitaxial strain in tuning exotic electronic states and provides a unique platform for investigating the superconducting mechanisms in nickelate superconductors. Here, we use resonant inelastic X-ray scattering (RIXS) to probe the strain-dependent electronic and spin excitations in LNO thin films with biaxial strain ranging from $ε\approx-1.04\%$ to $1.91\%$. Compared with the bulk crystal, the LNO thin film grown on LaAlO$_3$ (with $ε\approx-1.04\%$) exhibits similar $dd$ excitations and enhanced spin excitation bandwidth. In contrast, the 0.4 eV and 1.6 eV $dd$ excitations associated with the Ni 3$d_{z^2}$ orbital, along with the spin excitations, are significantly suppressed in the film grown on SrTiO$_3$ ($\varepsilon\approx1.91\%$). The $c$-axis compression and the reduced out-of-plane Ni-O-Ni bond angle, induced by in-plane tensile strain in LNO/SrTiO$_3$ broaden the Ni 3$d_{z^2}$ bandwidth and decrease the Ni 3$d_{z^2}$-O 2$p_{z}$ hybridization, thereby suppressing the $dd$ excitations. The evolution of spin excitations reflects significant changes in the interlayer exchange coupling $J_z$, which can be attributed to the strain-tuned Ni-O-Ni bond angle. Since superconductivity is observed only in films with in-plane compressive strain ($ε\sim-2\%$), the strain-dependent spin correlations align with the emergence of superconductivity, providing indirect evidence for spin-fluctuation-mediated unconventional superconductivity in LNO. △ Less

Submitted 11 February, 2025; v1 submitted 5 February, 2025; originally announced February 2025.

Comments: 7 pages, 4 figures. Supplementary is available upon reasonable request

Deep Learning Models for Colloidal Nanocrystal Synthesis

Authors: Kai Gu, Yingping Liang, Jiaming Su, Peihan Sun, Jia Peng, Naihua Miao, Zhimei Sun, Ying Fu, Haizheng Zhong, Jun Zhang

Abstract: Colloidal synthesis of nanocrystals usually includes complex chemical reactions and multi-step crystallization processes. Despite the great success in the past 30 years, it remains challenging to clarify the correlations between synthetic parameters of chemical reaction and physical properties of nanocrystals. Here, we developed a deep learning-based nanocrystal synthesis model that correlates syn… ▽ More Colloidal synthesis of nanocrystals usually includes complex chemical reactions and multi-step crystallization processes. Despite the great success in the past 30 years, it remains challenging to clarify the correlations between synthetic parameters of chemical reaction and physical properties of nanocrystals. Here, we developed a deep learning-based nanocrystal synthesis model that correlates synthetic parameters with the final size and shape of target nanocrystals, using a dataset of 3500 recipes covering 348 distinct nanocrystal compositions. The size and shape labels were obtained from transmission electron microscope images using a segmentation model trained with a semi-supervised algorithm on a dataset comprising 1.2 million nanocrystals. By applying the reaction intermediate-based data augmentation method and elaborated descriptors, the synthesis model was able to predict nanocrystal's size with a mean absolute error of 1.39 nm, while reaching an 89% average accuracy for shape classification. The synthesis model shows knowledge transfer capabilities across different nanocrystals with inputs of new recipes. With that, the influence of chemicals on the final size of nanocrystals was further evaluated, revealing the importance order of nanocrystal composition, precursor or ligand, and solvent. Overall, the deep learning-based nanocrystal synthesis model offers a powerful tool to expedite the development of high-quality nanocrystals. △ Less

Submitted 14 December, 2024; originally announced December 2024.

Light-induced ultrafast glide-mirror symmetry breaking in black phosphorus

Authors: Changhua Bao, Fei Wang, Haoyuan Zhong, Shaohua Zhou, Tianyun Lin, Hongyun Zhang, Xuanxi Cai, Wenhui Duan, Shuyun Zhou

Abstract: Symmetry breaking plays an important role in fields of physics, ranging from particle physics to condensed matter physics. In solid-state materials, phase transitions are deeply linked to the underlying symmetry breakings, resulting in a rich variety of emergent phases. Such symmetry breakings are often induced by controlling the chemical composition and temperature or applying an electric field a… ▽ More Symmetry breaking plays an important role in fields of physics, ranging from particle physics to condensed matter physics. In solid-state materials, phase transitions are deeply linked to the underlying symmetry breakings, resulting in a rich variety of emergent phases. Such symmetry breakings are often induced by controlling the chemical composition and temperature or applying an electric field and strain, etc. In this work, we demonstrate an ultrafast glide-mirror symmetry breaking in black phosphorus through Floquet engineering. Upon near-resonance pumping, a light-induced full gap opening is observed at the glide-mirror symmetry protected nodal ring, suggesting light-induced breaking of the glide-mirror symmetry. Moreover, the full gap is observed only in the presence of the light-field and disappears almost instantaneously ($\ll$100 fs) when the light-field is turned off, suggesting the ultrafast manipulation of the symmetry and its Floquet engineering origin. This work not only demonstrates light-matter interaction as an effective way to realize ultrafast symmetry breaking in solid-state materials, but also moves forward towards the long-sought Floquet topological phases. △ Less

Submitted 9 December, 2024; originally announced December 2024.

Journal ref: ACS Nano 18, 32038 (2024)

Manipulating the symmetry of photon-dressed electronic states

Authors: Changhua Bao, Michael Schüler, Teng Xiao, Fei Wang, Haoyuan Zhong, Tianyun Lin, Xuanxi Cai, Tianshuang Sheng, Xiao Tang, Hongyun Zhang, Pu Yu, Zhiyuan Sun, Wenhui Duan, Shuyun Zhou

Abstract: Strong light-matter interaction provides opportunities for tailoring the physical properties of quantum materials on the ultrafast timescale by forming photon-dressed electronic states, i.e., Floquet-Bloch states. While the light field can in principle imprint its symmetry properties onto the photon-dressed electronic states, so far, how to experimentally detect and further engineer the symmetry o… ▽ More Strong light-matter interaction provides opportunities for tailoring the physical properties of quantum materials on the ultrafast timescale by forming photon-dressed electronic states, i.e., Floquet-Bloch states. While the light field can in principle imprint its symmetry properties onto the photon-dressed electronic states, so far, how to experimentally detect and further engineer the symmetry of photon-dressed electronic states remains elusive. Here by utilizing time- and angle-resolved photoemission spectroscopy (TrARPES) with polarization-dependent study, we directly visualize the parity symmetry of Floquet-Bloch states in black phosphorus. The photon-dressed sideband exhibits opposite photoemission intensity to the valence band at the $Γ$ point,suggesting a switch of the parity induced by the light field. Moreover, a "hot spot" with strong intensity confined near $Γ$ is observed, indicating a momentum-dependent modulation beyond the parity switch. Combining with theoretical calculations, we reveal the light-induced engineering of the wave function of the Floquet-Bloch states as a result of the hybridization between the conduction and valence bands with opposite parities, and show that the "hot spot" is intrinsically dictated by the symmetry properties of black phosphorus. Our work suggests TrARPES as a direct probe for the parity of the photon-dressed electronic states with energy- and momentum-resolved information, providing an example for engineering the wave function and symmetry of such photon-dressed electronic states via Floquet engineering. △ Less

Submitted 9 December, 2024; originally announced December 2024.

Journal ref: Nature Communications 15, 10535 (2024)

First Order Preemptive Ising-nematic Transition in K$_{5}$Fe$_{4}$Ag$_{6}$Te$_{10}$

Authors: N. Giles-Donovan, Y. Chen, H. Fukui, T. Manjo, D. Ishikawa, A. Q. R. Baron, S. Chi, H. Zhong, S. Cao, Y. Tang, Y. Wang, X. Lu, Y. Song, R. J. Birgeneau

Abstract: Employing inelastic X-ray scattering and neutron scattering techniques, we observed nematic and magnetic phase transitions with distinct characters in K$_{5}$Fe$_{4}$Ag$_{6}$Te$_{10}$. Upon cooling, the nematic order undergoes a strongly first-order phase transition followed by a second-order magnetic transition at $T_{\textrm{N}}$ $\approx$ 34.6 K. The temperature difference between these two pha… ▽ More Employing inelastic X-ray scattering and neutron scattering techniques, we observed nematic and magnetic phase transitions with distinct characters in K$_{5}$Fe$_{4}$Ag$_{6}$Te$_{10}$. Upon cooling, the nematic order undergoes a strongly first-order phase transition followed by a second-order magnetic transition at $T_{\textrm{N}}$ $\approx$ 34.6 K. The temperature difference between these two phase transitions is $\sim$ 1 K. The observed phenomenon can be attributed to a distinctive first-order preemptive Ising-nematic transition, a characteristic unique to a quasi-two-dimensional scenario marked by strong out-of-plane spatial anisotropy due to weak coupling. Our studies establish K$_{5}$Fe$_{4}$Ag$_{6}$Te$_{10}$ as the first material in the family of iron pnictides and chalcogenides that possesses a nematic tricritical point preceding the magnetic one upon decreasing nematic coupling. △ Less

Submitted 19 July, 2024; originally announced July 2024.

Comments: 7 pages, 5 figures

Integrating 2D Magnets for Quantum Devices: from Materials and Characterization to Future Technology

Authors: Han Zhong, Douglas Z. Plummer, Pengcheng Lu, Yang Li, Polina A. Leger, Yingying Wu

Abstract: The unveiling of 2D van der Waals magnetism in 2017 ignited a surge of interest in low-dimensional magnetism. With dimensions reduced, research has delved into facile electric control of 2D magnetism, high-quality heterostructure design, and new device functionality. These atomically thin magnetic materials have spawned a burgeoning field known as 2D spintronics, holding immense promise for future… ▽ More The unveiling of 2D van der Waals magnetism in 2017 ignited a surge of interest in low-dimensional magnetism. With dimensions reduced, research has delved into facile electric control of 2D magnetism, high-quality heterostructure design, and new device functionality. These atomically thin magnetic materials have spawned a burgeoning field known as 2D spintronics, holding immense promise for future quantum technologies. In this review, we comprehensively survey the current advancements in 2D magnet-based quantum devices, accentuating their role in manifesting exotic properties and enabling novel functionalities. Topological states, spin torques, voltage control of magnetic anisotropy, strain engineering, twistronics and designer interface will be discussed. Furthermore, we offer an outlook to guide their development in future CMOS and quantum hardware paradigms. △ Less

Submitted 17 June, 2024; originally announced June 2024.

Comments: 35 pages, 8 figures

Ultrafast Carrier Relaxation Dynamics in a Nodal-Line Semimetal PtSn$_4$

Authors: Tianyun Lin, Yongkang Ju, Haoyuan Zhong, Xiangyu Zeng, Xue Dong, Changhua Bao, Hongyun Zhang, Tian-Long Xia, Peizhe Tang, Shuyun Zhou

Abstract: Topological Dirac nodal-line semimetals host topologically nontrivial electronic structure with nodal-line crossings around the Fermi level, which could affect the photocarrier dynamics and lead to novel relaxation mechanisms. Herein, by using time- and angle-resolved photoemission spectroscopy, we reveal the previously-inaccessible linear dispersions of the bulk conduction bands above the Fermi l… ▽ More Topological Dirac nodal-line semimetals host topologically nontrivial electronic structure with nodal-line crossings around the Fermi level, which could affect the photocarrier dynamics and lead to novel relaxation mechanisms. Herein, by using time- and angle-resolved photoemission spectroscopy, we reveal the previously-inaccessible linear dispersions of the bulk conduction bands above the Fermi level in a Dirac nodal-line semimetal PtSn$_4$, as well as the momentum and temporal evolution of the gapless nodal lines. A surprisingly ultrafast relaxation dynamics within a few hundred femtoseconds is revealed for photoexcited carriers in the nodal line. Theoretical calculations suggest that such ultrafast carrier relaxation is attributed to the multichannel scatterings among the complex metallic bands of PtSn$_4$ via electron-phonon coupling. In addition, a unique dynamic relaxation mechanism contributed by the highly anisotropic Dirac nodal-line electronic structure is also identified. Our work provides a comprehensive understanding of the ultrafast carrier dynamics in a Dirac nodal-line semimetal. △ Less

Submitted 20 May, 2024; originally announced May 2024.

Quantum simulation of honeycomb lattice model by high-order moiré pattern

Authors: Qiang Wan, Chunlong Wu, Xun-Jiang Luo, Shenghao Dai, Cao Peng, Renzhe Li, Shangkun Mo, Keming Zhao, Wen-Xuan Qiu, Hao Zhong, Yiwei Li, Chendong Zhang, Fengcheng Wu, Nan Xu

Abstract: Moiré superlattices have become an emergent solid-state platform for simulating quantum lattice models. However, in single moiré device, Hamiltonians parameters like lattice constant, hopping and interaction terms can hardly be manipulated, limiting the controllability and accessibility of moire quantum simulator. Here, by combining angle-resolved photoemission spectroscopy and theoretical analysi… ▽ More Moiré superlattices have become an emergent solid-state platform for simulating quantum lattice models. However, in single moiré device, Hamiltonians parameters like lattice constant, hopping and interaction terms can hardly be manipulated, limiting the controllability and accessibility of moire quantum simulator. Here, by combining angle-resolved photoemission spectroscopy and theoretical analysis, we demonstrate that high-order moiré patterns in graphene-monolayered xenon/krypton heterostructures can simulate honeycomb model in mesoscale, with in-situ tunable Hamiltonians parameters. The length scale of simulated lattice constant can be tuned by annealing processes, which in-situ adjusts intervalley interaction and hopping parameters in the simulated honeycomb lattice. The sign of the lattice constant can be switched by choosing xenon or krypton monolayer deposited on graphene, which controls sublattice degree of freedom and valley arrangment of Dirac fermions. Our work establishes a novel path for experimentally simulating the honeycomb model with tunable parameters by high-order moiré patterns. △ Less

Submitted 18 April, 2024; originally announced April 2024.

Comments: 19 pages, 5 figure

Journal ref: Phy. Rev. B 109, L161102 (2024)

Hidden charge density wave induced shadow bands and ultrafast dynamics of CuTe investigated using time-resolved ARPES

Authors: Haoyuan Zhong, Changhua Bao, Tianyun Lin, Fei Wang, Xuanxi Cai, Pu Yu, Shuyun Zhou

Abstract: Revealing the fine electronic structure is critical for understanding the underlying physics of low-dimensional materials. Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for mapping out the experimental electronic structure. By reducing the photon energy (e.g. to 6 eV) using laser sources, a greatly improved momentum resolution can be achieved, thereby provi… ▽ More Revealing the fine electronic structure is critical for understanding the underlying physics of low-dimensional materials. Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for mapping out the experimental electronic structure. By reducing the photon energy (e.g. to 6 eV) using laser sources, a greatly improved momentum resolution can be achieved, thereby providing opportunities for ``zooming in'' the fine electronic structure and even revealing the previously unresolvable bands near the Brillouin zone center. Here, by using quasi-one-dimensional material CuTe as an example, we demonstrate the unique capability of laser-based ARPES in revealing the fine electronic structures of ``hidden'' charge density wave induced shadow bands near the Brillouin zone center, which are previously unresolvable using synchrotron sources. The observation of the shadow bands reveals the CDW phase from the aspect of band folding, and the unpredicted CDW band hybridization strongly modifies the electronic structure and Fermi surface, which suggests that such hybridization must be taken into account for studying the CDW transition. Moreover, the ultrafast non-equilibrium carrier dynamics are captured by time-resolved ARPES, revealing the relaxation dynamics through electron-phonon scattering. Our work demonstrates the advantages of laser-based ARPES in zooming in the fine electronic structures, as well as capturing the ultrafast dynamics of low-dimensional materials. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 109, 165411 (2024)

C-type antiferromagnetic structure of topological semimetal CaMnSb$_2$

Authors: Bo Li, Xu-Tao Zeng, Qianhui Xu, Fan Yang, Junsen Xiang, Hengyang Zhong, Sihao Deng, Lunhua He, Juping Xu, Wen Yin, Xingye Lu, Huiying Liu, Xian-Lei Sheng, Wentao Jin

Abstract: Determination of the magnetic structure and confirmation of the presence or absence of inversion ($\mathcal{P}$) and time reversal ($\mathcal{T}$) symmetry is imperative for correctly understanding the topological magnetic materials. Here high-quality single crystals of the layered manganese pnictide CaMnSb$_2$ are synthesized using the self-flux method. De Haas-van Alphen oscillations indicate a… ▽ More Determination of the magnetic structure and confirmation of the presence or absence of inversion ($\mathcal{P}$) and time reversal ($\mathcal{T}$) symmetry is imperative for correctly understanding the topological magnetic materials. Here high-quality single crystals of the layered manganese pnictide CaMnSb$_2$ are synthesized using the self-flux method. De Haas-van Alphen oscillations indicate a nontrivial Berry phase of $\sim$ $π$ and a notably small cyclotron effective mass, supporting the Dirac semimetal nature of CaMnSb$_2$. Neutron diffraction measurements identify a C-type antiferromagnetic (AFM) structure below $T\rm_{N}$ = 303(1) K with the Mn moments aligned along the $a$ axis, which is well supported by the density functional theory (DFT) calculations. The corresponding magnetic space group is $Pn'm'a'$, preserving a $\mathcal{P}\times\mathcal{T}$ symmetry. Adopting the experimentally determined magnetic structure, band crossings near the Y point in momentum space and linear dispersions of the Sb $5p_{y,z}$ bands are revealed by the DFT calculations. Furthermore, our study predicts the possible existence of an intrinsic second-order nonlinear Hall effect in CaMnSb$_2$, offering a promising platform to study the impact of topological properties on nonlinear electrical transports in antiferromagnets. △ Less

Submitted 1 April, 2024; originally announced April 2024.

Comments: 7 Pages, 6 figures

Journal ref: Chinese Physics Letters 41, 037104 (2024)

Boson sampling enhanced quantum chemistry

Authors: Zhong-Xia Shang, Han-Sen Zhong, Yu-Kun Zhang, Cheng-Cheng Yu, Xiao Yuan, Chao-Yang Lu, Jian-Wei Pan, Ming-Cheng Chen

Abstract: In this work, we give a hybrid quantum-classical algorithm for solving electronic structure problems of molecules using only linear quantum optical systems. The variational ansatz we proposed is a hybrid of non-interacting Boson dynamics and classical computational chemistry methods, specifically, the Hartree-Fock method and the Configuration Interaction method. The Boson part is built by a linear… ▽ More In this work, we give a hybrid quantum-classical algorithm for solving electronic structure problems of molecules using only linear quantum optical systems. The variational ansatz we proposed is a hybrid of non-interacting Boson dynamics and classical computational chemistry methods, specifically, the Hartree-Fock method and the Configuration Interaction method. The Boson part is built by a linear optical interferometer which is easier to realize compared with the well-known Unitary Coupled Cluster (UCC) ansatz composed of quantum gates in conventional VQE and the classical part is merely classical processing acting on the Hamiltonian. We called such ansatzes Boson Sampling-Classic (BS-C). The appearance of permanents in the Boson part has its physical intuition to provide different kinds of resources from commonly used single-, double-, and higher-excitations in classical methods and the UCC ansatz to exploring chemical quantum states. Such resources can help enhance the accuracy of methods used in the classical parts. We give a scalable hybrid homodyne and photon number measurement procedure for evaluating the energy value which has intrinsic abilities to mitigate photon loss errors and discuss the extra measurement cost induced by the no Pauli exclusion principle for Bosons with its solutions. To demonstrate our proposal, we run numerical experiments on several molecules and obtain their potential energy curves reaching chemical accuracy. △ Less

Submitted 18 April, 2024; v1 submitted 25 March, 2024; originally announced March 2024.

Comments: 15 pages, 5 figures

Surface region band enhancement in noble gas adsorption assisted ARPES on kagome superconductor RbV3Sb5

Authors: Cao Peng, Yiwei Li, Xu Chen, Shenghao Dai, Zewen Wu, Chunlong Wu, Qiang Wan, Keming Zhao, Renzhe Li, Shangkun Mo, Dingkun Qin, Shuming Yu, Hao Zhong, Shengjun Yuan, Jiangang Guo, Nan Xu

Abstract: Electronic states near surface regions can be distinct from bulk states, which are paramount in understanding various physical phenomena occurring at surfaces and in applications in semiconductors, energy, and catalysis. Here, we report an abnormal surface region band enhancement effect in angle-resolved photoemission spectroscopy on kagome superconductor RbV3Sb5, by depositing noble gases with fi… ▽ More Electronic states near surface regions can be distinct from bulk states, which are paramount in understanding various physical phenomena occurring at surfaces and in applications in semiconductors, energy, and catalysis. Here, we report an abnormal surface region band enhancement effect in angle-resolved photoemission spectroscopy on kagome superconductor RbV3Sb5, by depositing noble gases with fine control. In contrast to conventional surface contamination, the intensity of surface region Sb band can be enhanced more than three times with noble gas adsorption. In the meantime, a hole-dope effect is observed for the enhanced surface region band, with other bands hardly changing. The doping effect is more pronounced with heavier noble gases. We propose that noble gas atoms selectively fill into alkali metal vacancy sites on the surface, which improves the surface condition, boosts surface region bands, and effectively dopes it with the Pauli repulsion mechanism. Our results provide a novel and reversible way to improve surface conditions and tune surface region bands by controlled surface noble gas deposition. △ Less

Submitted 17 March, 2024; originally announced March 2024.

Comments: 17 pages,4 figures

Journal ref: Phys. Rev. B 109, 115415 (2024)

Superconductivity and metallic behavior in heavily doped bulk single crystal diamond and graphene/diamond heterostructure

Authors: Shisheng Lin, Xutao Yu, Minhui Yang, Huikai Zhong, Jiarui Guo

Abstract: Owing to extremely large band gap of 5.5 eV and high thermal conductivity, diamond is recognized as the most important semiconductor. The superconductivity of polycrystalline diamond has always been reported, but there are also many controversies over the existence of superconductivity in bulk single crystal diamond and it remains a question whether a metallic state exists for such a large band ga… ▽ More Owing to extremely large band gap of 5.5 eV and high thermal conductivity, diamond is recognized as the most important semiconductor. The superconductivity of polycrystalline diamond has always been reported, but there are also many controversies over the existence of superconductivity in bulk single crystal diamond and it remains a question whether a metallic state exists for such a large band gap semiconductor. Herein, we realize a single crystal superconducting diamond with a Hall carrier concentration larger than 3*1020 cm-3 by co-doped of boron and nitrogen. Furthermore, we show that diamond can transform from superconducting to metallic state under similar carrier concentration with tuned carrier mobility degrading from 9.10 cm2 V-1 s-1 or 5.30 cm2 V-1 s-1 to 2.66 cm2 V-1 s-1 or 1.34 cm2 V-1 s-1. Through integrating graphene on a nitrogen and boron heavily co-doped diamond, the monolayer graphene can be superconducting through combining Andreev reflection and exciton mediated superconductivity, which may intrigue more interesting superconducting behavior of diamond heterostructure. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Floquet engineering of black phosphorus upon below-gap pumping

Authors: Shaohua Zhou, Changhua Bao, Benshu Fan, Fei Wang, Haoyuan Zhong, Hongyun Zhang, Peizhe Tang, Wenhui Duan, Shuyun Zhou

Abstract: Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pumping is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pum… ▽ More Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pumping is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pumping at photon energy of 160 meV which is far below the band gap, and the distinction between below-gap pumping and near-resonance pumping is revealed. Our work demonstrates light-induced band engineering upon below-gap pumping, and provides insights for extending Floquet engineering to more quantum materials. △ Less

Submitted 20 September, 2023; originally announced September 2023.

Journal ref: Phys. Rev. Lett. 131, 116401 (2023)

Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with UV-Vis: A Case Study for Cubic Boron Arsenide

Authors: Hong Zhong, Fengjiao Pan, Shuai Yue, Chengzhen Qin, Viktor Hadjiev, Fei Tian, Xinfeng Liu, Feng Lin, Zhiming Wang, Zhifeng Ren, Jiming Bao

Abstract: The Tauc plot method is widely used to determine the bandgap of semiconductors via UV-visible optical spectroscopy due to its simplicity and perceived accuracy. However, the actual Tauc plot often exhibits significant baseline absorption below the expected bandgap, leading to discrepancies in the calculated bandgap depending on whether the linear fit is extrapolated to zero or non-zero baseline. I… ▽ More The Tauc plot method is widely used to determine the bandgap of semiconductors via UV-visible optical spectroscopy due to its simplicity and perceived accuracy. However, the actual Tauc plot often exhibits significant baseline absorption below the expected bandgap, leading to discrepancies in the calculated bandgap depending on whether the linear fit is extrapolated to zero or non-zero baseline. In this study, we show that both extrapolation methods can produce significant errors by simulating Tauc plots with varying levels of baseline absorption. To address this issue, we propose a new method that involves idealizing the absorption spectrum by removing its baseline before constructing the Tauc plot. Experimental verification of this method using a gallium phosphide (GaP) wafer with intentionally introduced baseline absorptions shows promising results. Furthermore, we apply this new method to cubic boron arsenide (c-BAs) and resolve discrepancies in c-BAs bandgap values reported by different groups, obtaining a converging bandgap of 1.835 eV based on both previous and new transmission spectra. The method is applicable to both indirect and direct bandgap semiconductors, regardless of whether the absorption spectrum is measured via transmission or diffuse reflectance, will become essential to obtain accurate values of their bandgaps. △ Less

Submitted 12 June, 2023; originally announced July 2023.

Revealing the two-dimensional electronic structure and anisotropic superconductivity in a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$

Authors: Haoyuan Zhong, Hongyun Zhang, Haoxiong Zhang, Ting Bao, Kenan Zhang, Shengnan Xu, Laipeng Luo, Awabaikeli Rousuli, Wei Yao, Jonathan D. Denlinger, Yaobo Huang, Yang Wu, Yong Xu, Wenhui Duan, Shuyun Zhou

Abstract: Van der Waals superlattices are important for tailoring the electronic structures and properties of layered materials. Here we report the superconducting properties and electronic structure of a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$. Anisotropic superconductivity with a transition temperature $T_c$ = 5.6 $\pm$ 0.1 K, which is higher than monolayer NbSe$_2$, is revealed by tran… ▽ More Van der Waals superlattices are important for tailoring the electronic structures and properties of layered materials. Here we report the superconducting properties and electronic structure of a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$. Anisotropic superconductivity with a transition temperature $T_c$ = 5.6 $\pm$ 0.1 K, which is higher than monolayer NbSe$_2$, is revealed by transport measurements on high-quality samples. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal the two-dimensional electronic structure and a charge transfer of 0.43 electrons per NbSe$_2$ unit cell from the blocking PbSe layer. In addition, polarization-dependent ARPES measurements reveal a significant circular dichroism with opposite contrast at K and K' valleys, suggesting a significant spin-orbital coupling and distinct orbital angular momentum. Our work suggests natural van der Waals superlattice as an effective pathway for achieving intriguing properties distinct from both the bulk and monolayer samples. △ Less

Submitted 24 April, 2023; originally announced April 2023.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Mater. 7, L041801 (2023)

Distinguishing and controlling Mottness in 1T-TaS$_2$ by ultrafast light

Authors: Changhua Bao, Haoyuan Zhong, Fei Wang, Tianyun Lin, Haoxiong Zhang, Zhiyuan Sun, Wenhui Duan, Shuyun Zhou

Abstract: Distinguishing and controlling the extent of Mottness is important for materials where the energy scales of the onsite Coulomb repulsion U and the bandwidth W are comparable. Here we report the ultrafast electronic dynamics of 1T-TaS$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy. A comparison of the electron dynamics for the newly-discovered intermediate phase (I-phase) as w… ▽ More Distinguishing and controlling the extent of Mottness is important for materials where the energy scales of the onsite Coulomb repulsion U and the bandwidth W are comparable. Here we report the ultrafast electronic dynamics of 1T-TaS$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy. A comparison of the electron dynamics for the newly-discovered intermediate phase (I-phase) as well as the low-temperature commensurate charge density wave (C-CDW) phase shows distinctive dynamics. While the I-phase is characterized by an instantaneous response and nearly time-resolution-limited fast relaxation (~200 fs), the C-CDW phase shows a delayed response and a slower relaxation (a few ps). Such distinctive dynamics refect the different relaxation mechanisms and provide nonequilibrium signatures to distinguish the Mott insulating I-phase from the C-CDW band insulating phase. Moreover, a light-induced bandwidth reduction is observed in the C-CDW phase, pushing it toward the Mott insulating phase. Our work demonstrates the power of ultrafast light-matter interaction in both distinguishing and controlling the extent of Mottness on the ultrafast timescale. △ Less

Submitted 3 March, 2023; originally announced March 2023.

Metal-bonded perovskite lead hydride with phonon-mediated superconductivity up to 46 K under atmospheric pressure

Authors: Yong He, Juan Du, Shi-ming Liu, Chong Tian, Wen-hui Guo, Min Zhang, Yao-hui Zhu, Hong-xia Zhong, Xinqiang Wang, Jun-jie Shi

Abstract: In the search for high-temperature superconductivity in hydrides, a plethora of multi-hydrogen superconductors have been theoretically predicted, and some have been synthesized experimentally under ultrahigh pressures of several hundred GPa. However, the impracticality of these high-pressure methods has been a persistent issue. In response, we propose a new approach to achieve high-temperature sup… ▽ More In the search for high-temperature superconductivity in hydrides, a plethora of multi-hydrogen superconductors have been theoretically predicted, and some have been synthesized experimentally under ultrahigh pressures of several hundred GPa. However, the impracticality of these high-pressure methods has been a persistent issue. In response, we propose a new approach to achieve high-temperature superconductivity under atmospheric pressure by implanting hydrogen into lead to create a stable few-hydrogen metal-bonded perovskite, Pb$_4$H. This approach diverges from the popular design methodology of multi-hydrogen covalent high critical temperature ($T_c$) superconductors under ultrahigh pressure. By solving the anisotropic Migdal-Eliashberg (ME) equations, we demonstrate that perovskite Pb$_4$H is a typical phonon-mediated superconductor with a $T_c$ of 46 K, which is six times higher than that of bulk Pb (7.22 K) and higher than that of MgB$_2$ (39 K). The high $T_c$ can be attributed to the strong electron-phonon coupling (EPC) strength of 2.45, which arises from hydrogen implantation in lead that induces several high-frequency optical phonon modes with a relatively large phonon linewidth resulting from H atom vibration. The metallic-bonding in perovskite Pb$_4$H not only improves the structural stability but also guarantees better ductility than the widely investigated multi-hydrogen, iron-based, and cuprate superconductors. These results suggest that there is potential for the exploration of new high-temperature superconductors under atmospheric pressure and may reignite interest in their experimental synthesis soon. △ Less

Submitted 17 April, 2023; v1 submitted 10 February, 2023; originally announced February 2023.

Comments: 6 pages, 4 figures

Pseudospin-selective Floquet band engineering in black phosphorus

Authors: Shaohua Zhou, Changhua Bao, Benshu Fan, Hui Zhou, Qixuan Gao, Haoyuan Zhong, Tianyun Lin, Hang Liu, Pu Yu, Peizhe Tang, Sheng Meng, Wenhui Duan, Shuyun Zhou

Abstract: Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials, cold atoms and photonic systems via hybridization with photon-dressed Floquet states in the strong coupling limit, dubbed as Floquet engineering. Such interaction leads to tailored properties of quantum materials, for example, modifications of the topological properties of Dirac materi… ▽ More Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials, cold atoms and photonic systems via hybridization with photon-dressed Floquet states in the strong coupling limit, dubbed as Floquet engineering. Such interaction leads to tailored properties of quantum materials, for example, modifications of the topological properties of Dirac materials and modulation of the optical response. Despite extensive research interests over the past decade, there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, based on time- and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor - black phosphorus. Upon near-resonance pumping at photon energy of 340 to 440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favoring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquet band engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus, and provides important guiding principles for Floquet engineering of semiconductors. △ Less

Submitted 1 February, 2023; originally announced February 2023.

Journal ref: Nature 614, 75-80 (2023)

A newly-designed femtosecond KBe$_2$BO$_3$F$_2$ device with pulse duration down to 55 fs for time- and angle-resolved photoemission spectroscopy

Authors: Haoyuan Zhong, Changhua Bao, Tianyun Lin, Shaohua Zhou, Shuyun Zhou

Abstract: Developing a widely tunable vacuum ultraviolet (VUV) source with sub-100 femtoseconds (fs) pulse duration is critical for ultrafast pump-probe techniques such as time- and angle-resolved photoemission spectroscopy (TrARPES). While a tunable probe source with photon energy of 5.3 - 7.0 eV has been recently implemented for TrARPES by using a KBe$_2$BO$_3$F$_2$ (KBBF) device, the time resolution of 2… ▽ More Developing a widely tunable vacuum ultraviolet (VUV) source with sub-100 femtoseconds (fs) pulse duration is critical for ultrafast pump-probe techniques such as time- and angle-resolved photoemission spectroscopy (TrARPES). While a tunable probe source with photon energy of 5.3 - 7.0 eV has been recently implemented for TrARPES by using a KBe$_2$BO$_3$F$_2$ (KBBF) device, the time resolution of 280 - 320 fs is still not ideal, which is mainly limited by the duration of the VUV probe pulse generated by the KBBF device. Here, by designing a new KBBF device which is specially optimized for fs applications, an optimum pulse duration of 55 fs is obtained after systematic diagnostics and optimization. More importantly, a high time resolution of 81 - 95 fs is achieved for TrARPES measurements covering the probe photon energy range of 5.3 - 7.0 eV, making it particularly useful for investigating the ultrafast dynamics of quantum materials. Our work extends the application of KBBF device to ultrafast pump-probe techniques with the advantages of both widely tunable VUV source and ultimate time resolution. △ Less

Submitted 1 February, 2023; originally announced February 2023.

Comments: 8 pages, 4 figures

Journal ref: Rev. Sci. Instrum. 93, 113910 (2022)

Quasiparticle band alignment and stacking-independent exciton in MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As)

Authors: Hongxia Zhong, Guangyong Zhang, Cheng Lu, Shiyuan Gao

Abstract: Motivated by the recently synthesized two-dimensional semiconducting MoSi$_2$N$_4$, we systematically investigate the quasiparticle band alignment and exciton in monolayer MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As) using ab initio GW and Bethe-Salpeter equation calculations. Compared with the results from density functional theory (DFT), our GW calculations reveal substantially more sign… ▽ More Motivated by the recently synthesized two-dimensional semiconducting MoSi$_2$N$_4$, we systematically investigate the quasiparticle band alignment and exciton in monolayer MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As) using ab initio GW and Bethe-Salpeter equation calculations. Compared with the results from density functional theory (DFT), our GW calculations reveal substantially more significant band gaps and different absolute quasiparticle energy but predict the same types of band alignments. △ Less

Submitted 9 July, 2022; originally announced July 2022.

A puzzling insensitivity of magnon spin diffusion to the presence of 180$^\circ$ domain walls in a ferrimagnetic insulator

Authors: Ruofan Li, Lauren J. Riddiford, Yahong Chai, Minyi Dai, Hai Zhong, Bo Li, Peng Li, Di Yi, David A. Broadway, Adrien E. E. Dubois, Patrick Maletinsky, Jiamian Hu, Yuri Suzuki, Daniel C. Ralph, Tianxiang Nan

Abstract: We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl$_{0.5}$Fe$_{1.5}$O$_{4}$ (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180$^\circ$ domain walls. We find, surprisingly, that the presence of the domain walls h… ▽ More We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl$_{0.5}$Fe$_{1.5}$O$_{4}$ (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180$^\circ$ domain walls. We find, surprisingly, that the presence of the domain walls has very little effect on the spin diffusion -- nonlocal spin transport signals in the multi-domain state retain at least 95% of the maximum signal strength measured for the spatially-uniform magnetic state, over distances at least five times the typical domain size. This result is in conflict with simple models of interactions between magnons and static domain walls, which predict that the spin polarization carried by the magnons reverses upon passage through a 180$^\circ$ domain wall. △ Less

Submitted 26 April, 2022; originally announced April 2022.

Balanced Partial Entanglement and Mixed State Correlations

Authors: Hugo A. Camargo, Pratik Nandy, Qiang Wen, Haocheng Zhong

Abstract: Recently in Ref.\cite{Wen:2021qgx}, one of the authors introduced the balanced partial entanglement (BPE), which has been proposed to be dual to the entanglement wedge cross-section (EWCS). In this paper, we explicitly demonstrate that the BPE could be considered as a proper measure of the total intrinsic correlation between two subsystems in a mixed state. The total correlation includes certain c… ▽ More Recently in Ref.\cite{Wen:2021qgx}, one of the authors introduced the balanced partial entanglement (BPE), which has been proposed to be dual to the entanglement wedge cross-section (EWCS). In this paper, we explicitly demonstrate that the BPE could be considered as a proper measure of the total intrinsic correlation between two subsystems in a mixed state. The total correlation includes certain crossing correlations which are minimized on some balance conditions. By constructing a class of purifications from Euclidean path-integrals, we find that the balanced crossing correlations show universality and can be considered as the generalization of the Markov gap for canonical purification. We also test the relation between the BPE and the EWCS in three-dimensional asymptotically flat holography. We find that the balanced crossing correlation vanishes for the field theory invariant under BMS$_3$ symmetry (BMSFT) and dual to the Einstein gravity, indicating the possibility of a perfect Markov recovery. We further elucidate these crossing correlations as a signature of tripartite entanglement and explain their interpretation in both AdS and non-AdS holography. △ Less

Submitted 15 April, 2022; v1 submitted 31 January, 2022; originally announced January 2022.

Comments: v2: 36 pages, 9 figures, clarification added, references updated, to appear in SciPost Physics

Journal ref: SciPost Phys. 12, 137 (2022)

The Growth of Passive Membranes: Evidence from Ti and Like Metals

Authors: Weiwei Lao, Qiaojie Luo, Ying Huang, Haixu Zhong, Chaoqian Lou, Xuliang Deng, Xiufang Wen, Xiaodong Li

Abstract: Current contradictory understanding of passivation comes from overly-complex passive models, defective characterization and misplaced theoretical approaches. From brand-new experimentation, we find that a Ti passive membrane has spatiotemporally-ordered macrostructure. At the start, a thermodynamically-stable chemisorbed Ti-O monolayer is immediately formed to inactivate the outmost Ti atoms and s… ▽ More Current contradictory understanding of passivation comes from overly-complex passive models, defective characterization and misplaced theoretical approaches. From brand-new experimentation, we find that a Ti passive membrane has spatiotemporally-ordered macrostructure. At the start, a thermodynamically-stable chemisorbed Ti-O monolayer is immediately formed to inactivate the outmost Ti atoms and shield direct reaction of environmental oxygens on metallic matrix, and then an underneath TiOx@Ti ceramet-like non-equilibrium gradient oxide layer rapidly forms. The two layers work synergistically to keep the macro-ordered passive membrane growing slowly via non-linear mechanism of incremental oxidation damping, thus effecting passivation. These findings disprove "the adsorption theory of passivation" and "the theory of passivity film" and inform a new theory we call "passivation theory of incremental oxidation damping". △ Less

Submitted 13 June, 2024; v1 submitted 30 January, 2022; originally announced January 2022.

Population inversion and Dirac fermion cooling in 3D Dirac semimetal Cd$_3$As$_2$

Authors: Changhua Bao, Qian Li, Sheng Xu, Shaohua Zhou, Xiang-Yu Zeng, Haoyuan Zhong, Qixuan Gao, Laipeng Luo, Dong Sun, Tian-Long Xia, Shuyun Zhou

Abstract: Revealing the ultrafast dynamics of three-dimensional (3D) Dirac fermions upon photoexcitation is critical for both fundamental science and device applications. So far, how the cooling of 3D Dirac fermions differs from that of two-dimensional (2D) Dirac fermions and whether there is population inversion are fundamental questions that remain to be answered. Here we reveal the ultrafast dynamics of… ▽ More Revealing the ultrafast dynamics of three-dimensional (3D) Dirac fermions upon photoexcitation is critical for both fundamental science and device applications. So far, how the cooling of 3D Dirac fermions differs from that of two-dimensional (2D) Dirac fermions and whether there is population inversion are fundamental questions that remain to be answered. Here we reveal the ultrafast dynamics of Dirac fermions in a model 3D Dirac semimetal Cd$_3$As$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy (TrARPES) with a tunable probe photon energy from 5.3 - 6.9 eV. The energy- and momentum-resolved relaxation rate shows a linear dependence on the energy, suggesting Dirac fermion cooling through intraband relaxation. Moreover, a population inversion is reported based on the observation of accumulated photoexcited carriers in the conduction band with a lifetime of $τ_n$ = 3.0 ps. Our work provides direct experimental evidence for a long-lived population inversion in a 3D Dirac semimetal, which is in contrast to 2D graphene where the interband relaxation occurs on a much faster timescale. △ Less

Submitted 17 December, 2021; originally announced December 2021.

Journal ref: Nano Lett. 22, 1138 (2022)

Ultrafast time- and angle-resolved photoemission spectroscopy with widely tunable probe photon energy of 5.3-7.0 eV for investigating dynamics of three-dimensional materials

Authors: Changhua Bao, Haoyuan Zhong, Shaohua Zhou, Runfa Feng, Yuan Wang, Shuyun Zhou

Abstract: Time- and angle-resolved photoemission spectroscopy (TrARPES) is a powerful technique for capturing the ultrafast dynamics of charge carriers and revealing photo-induced phase transitions in quantum materials. However, the lack of widely tunable probe photon energy, which is critical for accessing the dispersions at different out-of-plane momentum $k_z$ in TrARPES measurements, has hindered the ul… ▽ More Time- and angle-resolved photoemission spectroscopy (TrARPES) is a powerful technique for capturing the ultrafast dynamics of charge carriers and revealing photo-induced phase transitions in quantum materials. However, the lack of widely tunable probe photon energy, which is critical for accessing the dispersions at different out-of-plane momentum $k_z$ in TrARPES measurements, has hindered the ultrafast dynamics investigation of 3D quantum materials such as Dirac or Weyl semimetals. Here we report the development of a TrARPES system with a highly tunable probe photon energy from 5.3 to 7.0 eV. The tunable probe photon energy is generated by the fourth harmonic generation of a tunable wavelength femtosecond laser source by combining a $β$-BaB$_2$O$_4$ (BBO) crystal and a KBe$_2$BO$_3$F$_2$ (KBBF) crystal. High energy resolution of 29 - 48 meV and time resolution of 280 - 320 fs are demonstrated on 3D topological materials ZrTe$_5$ and Sb$_2$Te$_3$. Our work opens up new opportunities for exploring ultrafast dynamics in 3D quantum materials. △ Less

Submitted 17 December, 2021; originally announced December 2021.

Journal ref: Rev. Sci. Instrum. 93, 013902 (2022)

Uncover band topology via quantized drift in two-dimensional Bloch oscillations

Authors: Bo Zhu, Shi Hu, Honghua Zhong, Yongguan Ke

Abstract: We propose to measure band topology via quantized drift of Bloch oscillations in a two-dimensional Harper-Hofstadter lattice subjected to tilted fields in both directions. When the difference between the two tilted fields is large, Bloch oscillations uniformly sample all momenta, and hence the displacement in each direction tends to be quantized at multiples of the overall period, regardless of an… ▽ More We propose to measure band topology via quantized drift of Bloch oscillations in a two-dimensional Harper-Hofstadter lattice subjected to tilted fields in both directions. When the difference between the two tilted fields is large, Bloch oscillations uniformly sample all momenta, and hence the displacement in each direction tends to be quantized at multiples of the overall period, regardless of any momentum of initial state. The quantized displacement is related to a reduced Chern number defined as a line integral of Berry curvature in each direction, providing an almost perfect measurement of Chern number. Our scheme can apply to detect Chern number and topological phase transitions not only for the energy-separable band, but also for energy-inseparable bands which cannot be achieved by conventional Thouless pumping or integer quantum Hall effect. △ Less

Submitted 12 August, 2021; originally announced August 2021.

Comments: 11 pages, 9 figures

Journal ref: Phys. Rev. B 104, 104314 (2021)

Light-Tunable Surface State and Hybridization Gap in Magnetic Topological Insulator MnBi$_8$Te$_{13}$

Authors: Haoyuan Zhong, Changhua Bao, Huan Wang, Jiaheng Li, Zichen Yin, Yong Xu, Wenhui Duan, Tian-Long Xia, Shuyun Zhou

Abstract: MnBi$_8$Te$_{13}$ is an intrinsic ferromagnetic (FM) topological insulator with different complex surface terminations. Resolving the electronic structures of different termination surfaces and manipulation of the electronic state are important. Here, by using micrometer spot time- and angle-resolved photoemission spectroscopy ($μ$-TrARPES), we resolve the electronic structures and reveal the ultr… ▽ More MnBi$_8$Te$_{13}$ is an intrinsic ferromagnetic (FM) topological insulator with different complex surface terminations. Resolving the electronic structures of different termination surfaces and manipulation of the electronic state are important. Here, by using micrometer spot time- and angle-resolved photoemission spectroscopy ($μ$-TrARPES), we resolve the electronic structures and reveal the ultrafast dynamics upon photoexcitation. Photoinduced filling of the surface state hybridization gap is observed for the Bi$_2$Te$_3$ quintuple layer directly above MnBi$_2$Te$_4$ accompanied by a nontrivial shift of the surface state, suggesting light-tunable interlayer interaction. Relaxation of photoexcited electrons and holes is observed within 1-2 ps. Our work reveals photoexcitation as a potential control knob for tailoring the interlayer interaction and surface state of MnBi$_8$Te$_{13}$. △ Less

Submitted 3 August, 2021; originally announced August 2021.

Journal ref: Nano Lett. 21, 14, 6080-6086 (2021)

Quantum interference between independent solid-state single-photon sources separated by 300 km fiber

Authors: Xiang You, Ming-Yang Zheng, Si Chen, Run-Ze Liu, Jian Qin, M. -C. Xu, Z. -X. Ge, T. -H. Chung, Y. -K. Qiao, Y. -F. Jiang, H. -S. Zhong, M. -C. Chen, H. Wang, Y. -M. He, X. -P. Xie, H. Li, L. -X. You, C. Schneider, J. Yin, T. -Y. Chen, M. Benyoucef, Yong-Heng Huo, S. Hoefling, Qiang Zhang, Chao-Yang Lu , et al. (1 additional authors not shown)

Abstract: In the quest to realize a scalable quantum network, semiconductor quantum dots (QDs) offer distinct advantages including high single-photon efficiency and indistinguishability, high repetition rate (tens of GHz with Purcell enhancement), interconnectivity with spin qubits, and a scalable on-chip platform. However, in the past two decades, the visibility of quantum interference between independent… ▽ More In the quest to realize a scalable quantum network, semiconductor quantum dots (QDs) offer distinct advantages including high single-photon efficiency and indistinguishability, high repetition rate (tens of GHz with Purcell enhancement), interconnectivity with spin qubits, and a scalable on-chip platform. However, in the past two decades, the visibility of quantum interference between independent QDs rarely went beyond the classical limit of 50$\%$ and the distances were limited from a few meters to kilometers. Here, we report quantum interference between two single photons from independent QDs separated by 302 km optical fiber. The single photons are generated from resonantly driven single QDs deterministically coupled to microcavities. Quantum frequency conversions are used to eliminate the QD inhomogeneity and shift the emission wavelength to the telecommunication band. The observed interference visibility is 0.67$\pm$0.02 (0.93$\pm$0.04) without (with) temporal filtering. Feasible improvements can further extend the distance to 600 km. Our work represents a key step to long-distance solid-state quantum networks. △ Less

Submitted 29 June, 2021; originally announced June 2021.

Comments: 14 pages, 5 figures

Electronic properties and quasi-particle model of monolayer MoSi$_2$N$_4$

Authors: Zhenwei Wang, Xueheng Kuang, Guodong Yu, Peiliang Zhao, Hongxia Zhong, Shengjun Yuan

Abstract: By a combined study with first-principles calculations and symmetry analysis, we theoretically investigate the electronic properties of monolayer MoSi$_2$N$_4$. While the spin-orbital coupling results in bands splitting, the horizontal mirror symmetry locks the spin polarization along z-direction. In addition, a three-band tight-binding model is constructed to describe the low-energy quasi-particl… ▽ More By a combined study with first-principles calculations and symmetry analysis, we theoretically investigate the electronic properties of monolayer MoSi$_2$N$_4$. While the spin-orbital coupling results in bands splitting, the horizontal mirror symmetry locks the spin polarization along z-direction. In addition, a three-band tight-binding model is constructed to describe the low-energy quasi-particle states of monolayer MoSi$_2$N$_4$, which can be generalized to strained MoSi$_2$N$_4$ and its derivatives. The calculations using the tight-binding model show an undamped $\sqrt{q}$-dependent plasmon mode that agrees well with the results of first-principles calculations. Our model can be extended to be suitable for future theoretical and numerical studies of low-energy properties in MoSi$_2$N$_4$ family materials. Furthermore, the study of electronic properties of monolayer MoSi$_2$N$_4$ paves a way for its applications in spintronics and plasmonics. △ Less

Submitted 16 October, 2021; v1 submitted 29 March, 2021; originally announced March 2021.

Comments: 8 pages, 8 figures

Structure-Composition-Property Relationships in Antiperovskite Nitrides: Guiding a Rational Alloy Design

Authors: Hongxia Zhong, Chunbao Feng, Hai Wang, Dan Han, Guodong Yu, Wenqi Xiong, Yunhai Li, Mao Yang, Gang Tang, Shengjun Yuan

Abstract: The alloy strategy through A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorber, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antipe… ▽ More The alloy strategy through A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorber, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antiperovskite alloys are rare. In this work, we investigated the previously overlooked electronic property (e.g., conduction band convergence), static dielectric constant, and exciton binding energy in inorganic antiperovskite nitrides by first-principles calculations. Then, we reveal a linear relationship between tolerance factor and various physical quantities. Guided by the established structure-composition-property relationship in six antiperovskite nitrides X3NA (X2+ = Mg2+, Ca2+, Sr2+; A3- = P3-, As3-, Sb3-, Bi3-), for the first time, we design a promising antiperovskite alloy Mg3NAs0.5Bi0.5 with the quasi-direct band gap of 1.402 eV. Finally, we make a comprehensive comparison between antiperovskite nitrides and conventional halide perovskites for pointing out the future direction for device applications. △ Less

Submitted 7 October, 2021; v1 submitted 27 March, 2021; originally announced March 2021.

Journal ref: ACS Appl. Mater. Interfaces 2021

Quantum computational advantage using photons

Authors: Han-Sen Zhong, Hui Wang, Yu-Hao Deng, Ming-Cheng Chen, Li-Chao Peng, Yi-Han Luo, Jian Qin, Dian Wu, Xing Ding, Yi Hu, Peng Hu, Xiao-Yan Yang, Wei-Jun Zhang, Hao Li, Yuxuan Li, Xiao Jiang, Lin Gan, Guangwen Yang, Lixing You, Zhen Wang, Li Li, Nai-Le Liu, Chao-Yang Lu, Jian-Wei Pan

Abstract: Gaussian boson sampling exploits squeezed states to provide a highly efficient way to demonstrate quantum computational advantage. We perform experiments with 50 input single-mode squeezed states with high indistinguishability and squeezing parameters, which are fed into a 100-mode ultralow-loss interferometer with full connectivity and random transformation, and sampled using 100 high-efficiency… ▽ More Gaussian boson sampling exploits squeezed states to provide a highly efficient way to demonstrate quantum computational advantage. We perform experiments with 50 input single-mode squeezed states with high indistinguishability and squeezing parameters, which are fed into a 100-mode ultralow-loss interferometer with full connectivity and random transformation, and sampled using 100 high-efficiency single-photon detectors. The whole optical set-up is phase-locked to maintain a high coherence between the superposition of all photon number states. We observe up to 76 output photon-clicks, which yield an output state space dimension of $10^{30}$ and a sampling rate that is $10^{14}$ faster than using the state-of-the-art simulation strategy and supercomputers. The obtained samples are validated against various hypotheses including using thermal states, distinguishable photons, and uniform distribution. △ Less

Submitted 2 December, 2020; originally announced December 2020.

Comments: 23 pages, 5 figures, supplemental information not included but a link is provided. This work is dedicated to the people in the fight against the COVID-19 outbreak during which the final stage of this experiment was carried out

Journal ref: Science 370, 1460 (2020)

Strain-induced semiconductor to metal transition in MA2Z4 bilayers

Authors: Hongxia Zhong, Wenqi Xiong, Pengfei Lv, Jin Yu, Shengjun Yuan

Abstract: Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calcul… ▽ More Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA2Z4 bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions observed in the family of MA2Z4 bilayers present interesting possibilities for strain-induced engineering of their electronic properties. △ Less

Submitted 18 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. B 103, 085124 (2021)

Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides

Authors: Zhen Zhan, Yipei Zhang, Pengfei Lv, Hongxia Zhong, Guodong Yu, Francisco Guinea, Jose Angel Silva-Guillen, Shengjun Yuan

Abstract: Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs)… ▽ More Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states. △ Less

Submitted 10 September, 2020; v1 submitted 28 May, 2020; originally announced May 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 102, 241106 (2020)

Floquet-surface bound states in the continuum in a resonantly driven 1D tilted defect-free lattice

Authors: Bo Zhu, Yongguan Ke, Wenjie Liu, Zheng Zhou, Honghua Zhong

Abstract: We study the Floquet-surface bound states embedded in the continuum (BICs) and bound states out the continuum (BOCs)in a resonantly driven 1D tilted defect-free lattice. In contrast to fragile single-particle BICs assisted by specially tailored potentials, we find that Floquet-surface BICs, stable against structural perturbations, can exist in a wide range of parameter space. By using a multiple-t… ▽ More We study the Floquet-surface bound states embedded in the continuum (BICs) and bound states out the continuum (BOCs)in a resonantly driven 1D tilted defect-free lattice. In contrast to fragile single-particle BICs assisted by specially tailored potentials, we find that Floquet-surface BICs, stable against structural perturbations, can exist in a wide range of parameter space. By using a multiple-time-scale asymptotic analysis in the high-frequency limit, the appearance of Floquet-surface bound states can be analytically explained by effective Tamm-type defects at boundaries induced by the resonance between the periodic driving and tilt. The phase boundary of existing Floquet-surface states is also analytically given. Based on the repulsion effect of surface states, we propose to detect transition points and measure the number of Floquet-surface bound states by quantum walk. Our work opens a new door to experimental realization of BICs in quantum system. △ Less

Submitted 17 May, 2020; originally announced May 2020.

Comments: 8 pages, 4 figures. submitted to Phys.Rev.A

Journal ref: Phys. Rev. A 102, 023303 (2020)

Flatband Line States in Photonic Super-Honeycomb Lattices

Authors: Wenchao Yan, Hua Zhong, Daohong Song, Yiqi Zhang, Shiqi Xia, Liqin Tang, Daniel Leykam, Zhigang Chen

Abstract: We establish experimentally a photonic super-honeycomb lattice (sHCL) by use of a cw-laser writing technique, and thereby demonstrate two distinct flatband line states that manifest as noncontractible-loop-states in an infinite flatband lattice. These localized states (straight and zigzag lines) observed in the sHCL with tailored boundaries cannot be obtained by superposition of conventional compa… ▽ More We establish experimentally a photonic super-honeycomb lattice (sHCL) by use of a cw-laser writing technique, and thereby demonstrate two distinct flatband line states that manifest as noncontractible-loop-states in an infinite flatband lattice. These localized states (straight and zigzag lines) observed in the sHCL with tailored boundaries cannot be obtained by superposition of conventional compact localized states because they represent a new topological entity in flatband systems. In fact, the zigzag-line states, unique to the sHCL, are in contradistinction with those previously observed in the Kagome and Lieb lattices. Their momentum-space spectrum emerges in the high-order Brillouin zone where the flat band touches the dispersive bands, revealing the characteristic of topologically protected bandcrossing. Our experimental results are corroborated by numerical simulations based on the coupled mode theory. This work may provide insight to Dirac like 2D materials beyond graphene. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Journal ref: Adv. Optical Mater. 2020, 1902174

Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping

Authors: Peiliang Zhao, Jin Yu, H. Zhong, Malt. Rosner, Mikhail I. Katsnelson, Shengjun Yuan

Abstract: Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful theoretical treatments. Using semiconducting monolayers of transition metal dichalcogenides (TMDs) as prototypical systems affected by electrostatic gating, we s… ▽ More Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful theoretical treatments. Using semiconducting monolayers of transition metal dichalcogenides (TMDs) as prototypical systems affected by electrostatic gating, we show that the electronic and optical properties change indeed dramatically when the gating geometry is properly taken into account. This effect is implemented by a self-consistent calculation of the Coulomb interaction between the charges in different sub-layers within the tight-binding approximation. Thereby we consider both, single- and double-sided gating. Our results show that, at low doping levels of $10^{13}$ cm$^{-2}$, the electronic bands of monolayer TMDs shift rigidly for both types of gating, and subsequently undergo a Lifshitz transition. When approaching the doping level of $10^{14}$ cm$^{-2}$, the band structure changes dramatically, especially in the case of single-sided gating where we find that monolayer \ce{MoS2} and \ce{WS2} become indirect gap semiconductors. The optical conductivities calculated within linear response theory also show clear signatures of these doping-induced band structure renormalizations. Our numerical results based on light-weighted tight-binding models indicate the importance of electronic screening in doped layered structures, and pave the way for further understanding gated super-lattice structures formed by mutlilayers with extended Moiré pattern. △ Less

Submitted 13 January, 2021; v1 submitted 24 November, 2019; originally announced November 2019.

Comments: 9 pages, 6 figures

Journal ref: New J. Phys. 22 (2020) 083072

Hot Polarons with Trapped Excitons and Octahedra-Twist Phonons in CH3NH3PbBr3 Hybrid Perovskite Nanowires

Authors: Feilong Song, Chenjiang Qian, Yunuan Wang, Feng Zhang, Kai Peng, Shiyao Wu, Xin Xie, Jingnan Yang, Sibai Sun, Yang Yu, Jianchen Dang, Shan Xiao, Longlong Yang, Kuijuan Jin, Haizheng Zhong, Xiulai Xu

Abstract: Hybrid Perovskites have shown a great potential for applications in photovoltaics and light-emitting devices with high efficiency. Interaction between defect-induced trapped excitons and phonons plays an important role in understanding the emerging phenomena for such an excellent figure-of-merit. Here we demonstrate hot polarons with narrow linewidth in $\mathrm{CH_{3}NH_{3}PbBr_{3}}$ nanowires, w… ▽ More Hybrid Perovskites have shown a great potential for applications in photovoltaics and light-emitting devices with high efficiency. Interaction between defect-induced trapped excitons and phonons plays an important role in understanding the emerging phenomena for such an excellent figure-of-merit. Here we demonstrate hot polarons with narrow linewidth in $\mathrm{CH_{3}NH_{3}PbBr_{3}}$ nanowires, which originate from the interaction between trapped excitons and octahedra-twist phonons. The observation of hot polarons in photoluminescence without gain methods indicates the large interaction strength between excitons and phonons. The multiple hot polarons are further confirmed by magneto-optical spectra with a Zeeman splitting of the trapped excitons and a phonon energy increase with diamagnetic effect. Furthermore, the phonons participating in the interaction are demonstrated to be the octahedra-twist vibrations which are transverse optical phonons, while the interaction between trapped excitons and longitudinal optical phonons is weak. Our work demonstrates that trapped excitons in perovskites prefer to interact with transverse rather than longitudinal optical phonons. Since bulk materials usually interact with longitudinal optical phonons, this result provides a physical explanation of the high tolerance of defects in perovskites. △ Less

Submitted 18 November, 2019; originally announced November 2019.

Comments: 16 pages, 4 figures

Journal ref: Laser & Photonics Reviews, 1900267 (2019)

Near-Infrared Lead Chalcogenide Quantum Dots: Synthesis and Applications in Light Emitting Diodes

Authors: Haochen Liu, Huaying Zhong, Fankai Zheng, Yue Xie, Depeng Li, Dan Wu, Ziming Zhou, Xiao Wei Sun, Kai Wang

Abstract: This paper reviews recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX=PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs. This paper reviews recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX=PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs. △ Less

Submitted 25 October, 2019; originally announced October 2019.

Comments: 25 pages, 16 figures, review

Tunable magneto-optical properties of single-layer tin diselenide: From GW approximation to large-scale tight-binding calculations

Authors: Hongxia Zhong, Jin Yu, Kaixiang Huang, Shengjun Yuan

Abstract: A parameterized tight-binding (TB) model based on the first-principles GW calculations is developed for single layer tin diselenide (SnSe$_2$) and used to study its electronic and optical properties under external magnetic field. The truncated model is derived from six maximally localized wannier orbitals on Se site, which accurately describes the quasi-particle electronic states of single layer S… ▽ More A parameterized tight-binding (TB) model based on the first-principles GW calculations is developed for single layer tin diselenide (SnSe$_2$) and used to study its electronic and optical properties under external magnetic field. The truncated model is derived from six maximally localized wannier orbitals on Se site, which accurately describes the quasi-particle electronic states of single layer SnSe$_2$ in a wide energy range. The quasi-particle electronic states are dominated by the hoppings between nearest wannier orbitals ($t_1$-$t_6$). Our numerical calculation shows that, due to the electron-hole asymmetry, two sets of Landau Level spectrum are obtained when a perpendicular magnetic field is applied. The Landau Level spectrum follows linear dependence on the level index and magnetic field, exhibiting properties of two-dimensional electron gas in traditional semiconductors. The optical conductivity calculation shows that the optical gap is very close to the GW value, and can be tuned by external magnetic field. Our proposed TB model can be used for further exploring the electronic, optical, and transport properties of SnSe$_2$, especially in the presence of external magnetic fields. △ Less

Submitted 27 July, 2019; originally announced July 2019.

Comments: 7 pages, 7 figures, 2 tables, 52 references

Journal ref: Phys. Rev. B 101, 125430 (2020)

Dynamic winding number for exploring band topology

Authors: Bo Zhu, Yongguan Ke, Honghua Zhong, Chaohong Lee

Abstract: Topological invariants play a key role in the characterization of topological states. Due to the existence of exceptional points, it is a great challenge to detect topological invariants in non-Hermitian systems. We put forward a dynamic winding number, the winding of realistic observables in long-time average, for exploring band topology in both Hermitian and non-Hermitian two-band models via a u… ▽ More Topological invariants play a key role in the characterization of topological states. Due to the existence of exceptional points, it is a great challenge to detect topological invariants in non-Hermitian systems. We put forward a dynamic winding number, the winding of realistic observables in long-time average, for exploring band topology in both Hermitian and non-Hermitian two-band models via a unified approach. We build a concrete relation between dynamic winding numbers and conventional topological invariants. In one-dimension, the dynamical winding number directly gives the conventional winding number. In two-dimension, the Chern number relates to the weighted sum of dynamic winding numbers of all phase singularity points. This work opens a new avenue to measure topological invariants not requesting any prior knowledge of system topology via time-averaged spin textures. △ Less

Submitted 10 October, 2019; v1 submitted 25 July, 2019; originally announced July 2019.

Comments: 6+7 pages, 3+4 figures

Journal ref: Phys. Rev. Research 2, 023043 (2020)