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Fundamental Crystal Field Excitations in Magnetic Semiconductor SnO$_2$:Mn,Fe,Co,Ni
Authors:
B. Leedahl,
D. J. McCloskey,
D. W. Boukhvalov,
I. S. Zhidkov,
A. I. Kukharenko,
E. Z. Kurmaev,
S. O. Cholakh,
N. V. Gavrilov,
V. I. Brinzari,
A. Moewes
Abstract:
Directly measuring elementary electronic excitations in dopant $3d$ metals is essential to understanding how they function as part of their host material. Through calculated crystal field splittings of the $3d$ electron band it is shown how transition metals Mn, Fe, Co, and Ni are incorporated into SnO$_2$. The crystal field splittings are compared to resonant inelastic x-ray scattering (RIXS) exp…
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Directly measuring elementary electronic excitations in dopant $3d$ metals is essential to understanding how they function as part of their host material. Through calculated crystal field splittings of the $3d$ electron band it is shown how transition metals Mn, Fe, Co, and Ni are incorporated into SnO$_2$. The crystal field splittings are compared to resonant inelastic x-ray scattering (RIXS) experiments, which measure precisely these elementary $dd$ excitations. The origin of spectral features can be determined and identified via this comparison, leading to an increased understanding of how such dopant metals situate themselves in, and modify the host's electronic and magnetic properties; and also how each element differs when incorporated into other semiconducting materials. We found that oxygen vacancy formation must not occur at nearest neighbour sites to metal atoms, but instead must reside at least two coordination spheres beyond. The coordination of the dopants within the host can then be explicitly related to the $d$-electron configurations and energies. This approach facilitates an understanding of the essential link between local crystal coordination and electronic/magnetic properties.
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Submitted 7 August, 2019;
originally announced August 2019.
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XPS evidence of degradation mechanism in hybrid halide perovskites
Authors:
I. S. Zhidkov,
A. I. Poteryaev,
A. Kukharenko,
L. D. Finkelstein,
S. O. Cholakh,
A. F. Akbulatov,
P. A. Troshin,
C. -C. Chueh,
E. Z. Kurmaev
Abstract:
The paper presents the results of measurements of XPS valence band spectra of SiO2/MAPbI3 hybrid perovskites subjected to irradiation with visible light and annealing at an exposure of 0-1000 hours. It is found from XPS survey spectra that in both cases (irradiation and annealing) a decrease in the I:Pb ratio is observed with aging time, which unambiguously indicates PbI2 phase separation as a pho…
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The paper presents the results of measurements of XPS valence band spectra of SiO2/MAPbI3 hybrid perovskites subjected to irradiation with visible light and annealing at an exposure of 0-1000 hours. It is found from XPS survey spectra that in both cases (irradiation and annealing) a decrease in the I:Pb ratio is observed with aging time, which unambiguously indicates PbI2 phase separation as a photo and thermal product of degradation. The comparison of the XPS valence band spectra of irradiated and annealed perovskites with density functional theory calculations of the MAPbI3 and PbI2 compounds have shown a systematic decrease in the contribution of I 5p-states and allowed us to determine the threshold for degradation, which is 500 hours for light irradiation and 200 hours for annealing.
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Submitted 21 June, 2019;
originally announced June 2019.
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Atomic and electronic structure of graphene oxide/Cu interface
Authors:
Danil W. Boukhvalov,
Ernst Z. Kurmaev,
Ewelina Urbańczyk,
Grzegorz Dercz,
Agnieszka Stolarczyk,
Wojciech Simka,
Andrey I. Kukharenko,
Ivan S. Zhidkov,
Anatoly I. Slesarev,
Anatoly F. Zatsepin,
Seif O. Cholakh
Abstract:
The results of X-ray photoemission (XPS) and valence bands spectroscopy, optically stimulated electron emission (OSEE) measurements and density functional theory based modeling of graphene oxide (GO) placed on Cu via an electrophoretic deposition (EPD) are reported. The comparison of XPS spectra of EPD prepared GO/Cu composites with those of as prepared GO, strongly reduced GO, pure and oxidized c…
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The results of X-ray photoemission (XPS) and valence bands spectroscopy, optically stimulated electron emission (OSEE) measurements and density functional theory based modeling of graphene oxide (GO) placed on Cu via an electrophoretic deposition (EPD) are reported. The comparison of XPS spectra of EPD prepared GO/Cu composites with those of as prepared GO, strongly reduced GO, pure and oxidized copper demonstrate the partial (until C/O ratio about two) removal of oxygen-containing functional groups from GO simultaneously with the formation of copper oxide-like layers over the metallic substrate. OSEE measurements evidence the presence of copper oxide phase in the systems simultaneously with the absence of contributions from GO with corresponding energy gap. All measurements demonstrate the similarity of the results for different thickness of GO cover of the copper surface. Theoretical modeling demonstrates favorability of migration of oxygen-containing functional groups from GO to the copper substrate only for the case of C/O ratio below two and formation of Cu-O-C bonds between substrate and GO simultaneously with the vanishing of the energy gap in GO layer. Basing on results of experimental measurements and theoretical calculations we suggest the model of atomic structure for Cu/GO interface as Cu/CuO/GO with C/O ratio in gapless GO about two.
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Submitted 3 September, 2018;
originally announced September 2018.
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Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies
Authors:
D. W. Boukhvalov,
I. S. Zhidkov,
A. I. Kukharenko,
A. I. Slesarev,
A. F. Zatsepin,
S. O. Cholakh,
E. Z. Kurmaev
Abstract:
Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of…
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Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically favorable and creation of the vacancies that can induce the oxidation of copper substrate is energetically unfavorable. In the case of non-graphitic boron defects oxidation of the area, a nearby impurity is metastable that not only prevent oxidation but makes boron-doped graphene. Modeling of oxygen reduction reaction demonstrates high catalytic performance of these materials.
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Submitted 7 February, 2018;
originally announced February 2018.
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Atomic and electronic structures of stable linear carbon chains on Ag-nanoparticles
Authors:
D. W. Boukhvalov,
I. S. Zhidkov,
E. Z. Kurmaev,
E. Fazio,
S. O. Cholakh,
L. D'Urso
Abstract:
In this work, we report X-ray photoelectron (XPS) and valence band (VB) spectroscopy measurements of surfactant-free silver nanoparticles and silver/linear carbon chains (Ag@LCC) structures prepared by pulse laser ablation (PLA) in water. Our measurements demonstrate significant oxidation only on the surfaces of the silver nanoparticles with many covalent carbon-silver bonds but only negligible tr…
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In this work, we report X-ray photoelectron (XPS) and valence band (VB) spectroscopy measurements of surfactant-free silver nanoparticles and silver/linear carbon chains (Ag@LCC) structures prepared by pulse laser ablation (PLA) in water. Our measurements demonstrate significant oxidation only on the surfaces of the silver nanoparticles with many covalent carbon-silver bonds but only negligible traces of carbon-oxygen bonds. Theoretical modeling also provides evidence of the formation of robust carbon-silver bonds between linear carbon chains and pure and partially oxidized silver surfaces. A comparison of theoretical and experimental electronic structures also provides evidence of the presence of non-oxidized linear carbon chains on silver surfaces. To evaluate the chemical stability, we investigated the energetics of the physical adsorption of oxidative species (water and oxygen) and found that this adsorption is much preferrable on oxidized or pristine silver surfaces than the adsorption of linear carbon chains, which makes the initial step in the oxidation of LCC energetically unfavorable.
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Submitted 19 November, 2017;
originally announced November 2017.
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Atomic and electronic structure of a copper/graphene interface as prepared and 1.5 years after
Authors:
D. W. Boukhvalov,
P. F. Bazylewski,
A. I. Kukharenko,
I. S. Zhidkov,
Yu. S. Ponosov,
E. Z. Kurmaev,
S. O. Cholakh,
Y. H. Lee,
G. S. Chang
Abstract:
We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interf…
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We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interfaces. For evaluation of the stability of the carbon cover, we propose a two-step model. The first step is oxidation of the graphene, and the second is perforation of graphene with the removal of carbon atoms as part of the carbon dioxide molecule. Results of the modeling and experimental measurements provide evidence that graphene grown on high-quality copper substrate becomes robust and stable in time (1.5 years). However, the stability of this interface depends on the quality of the graphene and the number of native defects in the graphene and substrate. The effect of the presence of a metallic substrate with defects on the stability and electronic structure of graphene is also discussed.
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Submitted 30 July, 2017;
originally announced July 2017.
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Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
A. F. Zatsepin,
S. S. Kim,
N. V. Gavrilov,
I. S. Zhidkov
Abstract:
The over threshold carbon-loadings (~50 at.%) of initial TiO2-hosts and posterior Cu-sensitization (~7 at.%) was made using pulsed ion-implantation technique in sequential mode with 1 hour vacuum-idle cycle between sequential stages of embedding. The final Cx-TiO2:Cu samples were qualified using XPS wide-scan elemental analysis, core-levels and valence band mappings. The results obtained were disc…
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The over threshold carbon-loadings (~50 at.%) of initial TiO2-hosts and posterior Cu-sensitization (~7 at.%) was made using pulsed ion-implantation technique in sequential mode with 1 hour vacuum-idle cycle between sequential stages of embedding. The final Cx-TiO2:Cu samples were qualified using XPS wide-scan elemental analysis, core-levels and valence band mappings. The results obtained were discussed on the theoretic background employing DFT-calculations. The combined XPS and DFT analysis allows to establish and prove the final formula of the synthesized samples as Cx-TiO2:[Cu+][Cu2+] for the bulk and Cx-TiO2:[Cu+][Cu0] for thin-films. It was demonstrated the in the mode of heavy carbon-loadings the remaining majority of neutral C-C bonds (sp3-type) is dominating and only a lack of embedded carbon is fabricating the O-C=O clusters. No valence base-band width altering was established after sequential carbon-copper modification of the atomic structure of initial TiO2-hosts except the dominating majority of Cu 3s states after Cu-sensitization. The crucial role of neutral carbon low-dimensional impurities as the precursors for the new phases growth was shown for Cu-sensitized Cx-TiO2 intermediate-state hosts.
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Submitted 19 July, 2017;
originally announced July 2017.
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XPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO - the role of oxygen imperfections
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
N. V. Gavrilov,
E. Z. Kurmaev,
I. S. Zhidkov
Abstract:
An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 min exposure under Bi-ion beam, EBi+ = 30 keV, pulsed ion-current density of not more than 0.8 mA/cm2 with a repetition rate of 12.5 Hz). The final samples were qualified by X-ray photoelectron core-level and valence band mapping spectroscopy appl…
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An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 min exposure under Bi-ion beam, EBi+ = 30 keV, pulsed ion-current density of not more than 0.8 mA/cm2 with a repetition rate of 12.5 Hz). The final samples were qualified by X-ray photoelectron core-level and valence band mapping spectroscopy applying ASTM materials science standard. The spectroscopy data obtained was discussed on the basis of DFT-models for Bi-embedding into ZnO host-matrices. It was established that in the case of direct Bi-impurities insertion into the employed ZnO-host for both studied morphologies neither the only "pure" Bi2O3-like phase nor the only "pure" Bi-metal will be preferable to appear as a secondary phase. An unfavorability of the large cluster agglomeration of Bi-impurities in ZnO-hosts has been shown and an oxygen 2s electronic states pleomorphizm was surely established.
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Submitted 5 July, 2016;
originally announced July 2016.
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Pleomorphic structural imperfections caused by pulsed Bi-implantation in the bulk and thin-film morphologies of TiO2
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
N. V. Gavrilov,
S. S. Kim,
I. S. Zhidkov
Abstract:
The results of combined experimental and theoretical study of substitutional and clustering effects in Bi-doped TiO2 hosts (bulk and thin-film morphologies) are presented. Bi-doping of the bulk and thin-film titanium dioxide was made with help of pulsed ion-implantation (E(Bi+) = 30 keV, D = 1 * 1017 cm-2) without posterior tempering. The X-ray photoelectron spectroscopy (XPS) qualification (core-…
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The results of combined experimental and theoretical study of substitutional and clustering effects in Bi-doped TiO2 hosts (bulk and thin-film morphologies) are presented. Bi-doping of the bulk and thin-film titanium dioxide was made with help of pulsed ion-implantation (E(Bi+) = 30 keV, D = 1 * 1017 cm-2) without posterior tempering. The X-ray photoelectron spectroscopy (XPS) qualification (core-levels and valence bands) and Density-Functional Theory (DFT) calculations were employed in order to study the electronic structure of Bi-ion implanted TiO2 samples. According to XPS data obtained and DFT calculations, the Bi -> Ti cation substitution occurs in Bi-implanted bulk TiO2, whereas in the thin-film morphology of TiO2:Bi the Bi-atoms have metal-like clusters segregation tendency. Based on the combined XPS and DFT considerations the possible reasons and mechanism for the observed effects are discussed. It is believed that established peculiarities of bismuth embedding into employed TiO2 hosts are mostly the sequence of pleomorphic origin for the formed "bismuth-oxygen" chemical bonding.
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Submitted 18 April, 2016;
originally announced April 2016.
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Structural defects and electronic structure of N-ion implanted TiO2: bulk versus thin film
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
I. S. Zhidkov,
N. V. Gavrilov,
M. A. Korotin,
S. S. Kim
Abstract:
Systematic investigation of atomic structure of N-ion implanted TiO2 (thin films and bulk ceramics) was performed by XPS measurements (core levels and valence bands) and first-principles density functional theory (DFT) calculations. In bulk samples experiment and theory demonstrate anion N->O substitution. For the thin films case experiments evidence valuable contributions from N2 and NO molecule-…
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Systematic investigation of atomic structure of N-ion implanted TiO2 (thin films and bulk ceramics) was performed by XPS measurements (core levels and valence bands) and first-principles density functional theory (DFT) calculations. In bulk samples experiment and theory demonstrate anion N->O substitution. For the thin films case experiments evidence valuable contributions from N2 and NO molecule-like structures and theoretical modeling reveals a possibility of formation of these species as result of the appearance of interstitial nitrogen defects on the various surfaces of TiO2. Energetics of formation of oxygen vacancies and its key role for band gap reduction is also discussed.
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Submitted 28 July, 2015;
originally announced July 2015.
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XPS and DFT study of Sn incorporation into ZnO and TiO2 host matrices by pulsed ion implantation
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
E. Z. Kurmaev,
I. S. Zhidkov,
S. S. Kim,
L. Cui,
N. V. Gavrilov,
S. O. Cholakh
Abstract:
Bulk and thin films ZnO and TiO2 samples were doped with Sn by pulsed ion implantation and studied by means of X-ray photoelectron core-level and valence band spectroscopy as well as density functional theory calculations for comprehensive study of the incorporation of Sn. XPS spectral analysis showed that isovalent Sn cation substitution occurs in both zinc oxide (Sn2+ -> Zn2+) and titanium dioxi…
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Bulk and thin films ZnO and TiO2 samples were doped with Sn by pulsed ion implantation and studied by means of X-ray photoelectron core-level and valence band spectroscopy as well as density functional theory calculations for comprehensive study of the incorporation of Sn. XPS spectral analysis showed that isovalent Sn cation substitution occurs in both zinc oxide (Sn2+ -> Zn2+) and titanium dioxide (Sn4+ -> Ti4+) for bulk and film morphologies. For TiO2 films, the implantation also led to occupation of interstitials by doped ions, which induced the clustering of substituted and embedded Sn atoms; this did not occur in ZnO:Sn film samples. Density functional theory (DFT) formation energies were calculated of various incorporation processes, explaining the prevalence of substitutional defects in both matrices. Possible mechanisms and reasons for the observed trends in Sn incorporation into the ZnO and TiO2 matrices are discussed.
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Submitted 5 May, 2015;
originally announced May 2015.
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Electronic structure and magnetic properties of graphene/Co composites
Authors:
I. S. Zhidkov,
N. A. Skorikov,
A. V. Korolev,
A. I. Kukharenko,
E. Z. Kurmaev,
V. E. Fedorov,
S. O. Cholakh
Abstract:
The results of measurements of XPS spectra and magnetic properties of graphene/Co composites prepared by adding of CoCl$_2$x6H$_2$O diluted in ethyl alcohol to highly-splitted graphite are presented. XPS Co 2p measurements show two sets of 2p$_{3/2,1/2}$-lines belonging to oxidized and metallic Co-atoms. This means that metal in composite is partly oxidized. This conclusion is confirmed by magneti…
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The results of measurements of XPS spectra and magnetic properties of graphene/Co composites prepared by adding of CoCl$_2$x6H$_2$O diluted in ethyl alcohol to highly-splitted graphite are presented. XPS Co 2p measurements show two sets of 2p$_{3/2,1/2}$-lines belonging to oxidized and metallic Co-atoms. This means that metal in composite is partly oxidized. This conclusion is confirmed by magnetic measurements which show the presence of the main (from the metal) and shifted (from the oxide) hysteresis loops. The presence of oxide layer on the metal surface prevents the metal from the full oxidation and (as shown by magnetic measurements) provides the preservation of ferromagnetic properties after long exposure in ambient air which enables the use of graphene/metal composites in spintronics devices.
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Submitted 14 November, 2014;
originally announced November 2014.
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Characterization of solution processed TiOx buffer layers in inverted organic photovoltaics by XPS and DFT studies
Authors:
Ivan S. Zhidkov,
Ernst Z. Kurmaev,
Michel A. Korotin,
Andrey I. Kukharenko,
Achilleas Savva,
Stelios A. Choulis,
Danila M. Korotin,
Seif O. Cholakh
Abstract:
We present the results of XPS measurements (core levels and valence bands) of solution processed TiOx thin films prepared from titanium butoxide (C16H36O4Ti) diluted in isopropanol which is a common sol-gel route for fabricating TiOx electron selective contacts for ITO/TiOx inverted organic photovoltaics bottom electrodes. XPS Ti 2p and valence band spectra show the presence of additional features…
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We present the results of XPS measurements (core levels and valence bands) of solution processed TiOx thin films prepared from titanium butoxide (C16H36O4Ti) diluted in isopropanol which is a common sol-gel route for fabricating TiOx electron selective contacts for ITO/TiOx inverted organic photovoltaics bottom electrodes. XPS Ti 2p and valence band spectra show the presence of additional features which are absent in spectra of titanium butoxide deposited on Si and are attributed to appearance of Ti^{3+} valence states in ITO/TiOx. This conclusion is confirmed by density functional theory electronic structure calculations of stoichiometric TiO2 and oxygen deficient TiO_{2-1/8}. XPS C 1s measurements show the formation of C-O and O-C=O bonds which evidence the presence of residual carbon which can draw oxygen from the film network and induce the formation of fraction of Ti3+ states in TiOx films.
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Submitted 6 November, 2014;
originally announced November 2014.
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Modification of titanium and titanium dioxide surfaces by ion implantation: combined XPS and DFT study
Authors:
D. W. Boukhvalov,
D. M. Korotin,
A. I. Efremov,
E. Z. Kurmaev,
Ch. Borchers,
I. S. Zhidkov,
D. V. Gunderov,
R. Z. Valiev,
N. V. Gavrilov,
S. O. Cholakh
Abstract:
The results of XPS measurements (core levels and valence bands) of P+, Ca+, P+Ca+ and Ca+P+ ion implanted (E=30 keV, D=1x1017 cm-2) commercially pure titanium (cp-Ti) and first-principles density functional theory (DFT) calculations demonstrates formation of various structural defects in titanium dioxide films formed on the surface of implanted materials. We have found that for double implantation…
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The results of XPS measurements (core levels and valence bands) of P+, Ca+, P+Ca+ and Ca+P+ ion implanted (E=30 keV, D=1x1017 cm-2) commercially pure titanium (cp-Ti) and first-principles density functional theory (DFT) calculations demonstrates formation of various structural defects in titanium dioxide films formed on the surface of implanted materials. We have found that for double implantation (Ti:P+,Ca+ and Ti:Ca+,P+) the outermost surface layer formed mainly by Ca and P, respectively, i.e. the implantation sequence is very important. The DFT calculations show that under P+ and Ca+P+ ion implantation the formation energies for both cation (P-Ti) and anion (P-O) substitutions are comparable which can induce the creation of [PO4]3- and Ti-P species. For Ca+ and P+Ca+-ion implantation the calculated formation energies correspond to Ca2+-Ti4+ cation substitution. This conclusion is in agreement with XPS Ca 2p and Ti 2p core levels and valence band measurements and DFT calculations of electronic structure of related compounds. The conversion of implanted ions to Ca2+ and [PO4]3- species provides a good biocompatibility of cp-Ti for further formation of hydroxyapatite.
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Submitted 5 November, 2014;
originally announced November 2014.
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Local structure of Fe impurity atoms in ZnO: bulk versus surface
Authors:
J. A. McLeod,
D. W. Boukhvalov,
D. A. Zatsepin,
R. J. Green,
B. Leedahl,
L. Cui,
E. Z. Kurmaev,
I. S. Zhidkov,
L. D. Finkelstein,
N. V. Gavrilov,
S. O. Cholakh,
A. Moewes
Abstract:
By studying Fe-doped ZnO pellets and thin films with various x-ray spectroscopic techniques, and complementing this with density functional theory calculations, we find that Fe-doping in bulk ZnO induces isovalent (and isostructural) cation substitution (Fe2+ -> Zn2+). In contrast to this, Fe-doping near the surface produces both isovalent and heterovalent substitution (Fe3+ -> Zn2+). The calculat…
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By studying Fe-doped ZnO pellets and thin films with various x-ray spectroscopic techniques, and complementing this with density functional theory calculations, we find that Fe-doping in bulk ZnO induces isovalent (and isostructural) cation substitution (Fe2+ -> Zn2+). In contrast to this, Fe-doping near the surface produces both isovalent and heterovalent substitution (Fe3+ -> Zn2+). The calculations performed herein suggest that the most likely defect structure is the single or double substitution of Zn with Fe, although, if additional oxygen is available, then Fe substitution with interstitial oxygen is even more energetically favourable. Furthermore, it is found that ferromagnetic states are energetically unfavourable, and ferromagnetic ordering is likely to be realized only through the formation of a secondary phase (i.e. ZnFe2O4), or codoping with Cu.
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Submitted 16 February, 2014;
originally announced February 2014.
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Structural defects induced by Fe-ion implantation in TiO2
Authors:
B. Leedahl,
D. A. Zatsepin,
D. W. Boukhvalov,
R. J. Green,
J. A. McLeod,
S. S. Kim,
E. Z. Kurmaev,
I. S. Zhidkov,
N. V. Gavrilov,
S. O. Cholakh,
A. Moewes
Abstract:
X-ray photoelectron spectroscopy (XPS) and resonant x-ray emission spectroscopy (RXES) measurements of pellet and thin film forms of TiO$_2$ with implanted Fe ions are presented and discussed. The findings indicate that Fe-implantation in a TiO$_2$ pellet sample induces heterovalent cation substitution (Fe$^{2+}\rightarrow$ Ti$^{4+}$) beneath the surface region. But in thin film samples, the clust…
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X-ray photoelectron spectroscopy (XPS) and resonant x-ray emission spectroscopy (RXES) measurements of pellet and thin film forms of TiO$_2$ with implanted Fe ions are presented and discussed. The findings indicate that Fe-implantation in a TiO$_2$ pellet sample induces heterovalent cation substitution (Fe$^{2+}\rightarrow$ Ti$^{4+}$) beneath the surface region. But in thin film samples, the clustering of Fe atoms is primarily detected. In addition to this, significant amounts of secondary phases of Fe$^{3+}$ are detected on the surface of all doped samples due to oxygen exposure. These experimental findings are compared with density functional theory (DFT) calculations of formation energies for different configurations of structural defects in the implanted TiO$_2$:Fe system. According to our calculations, the clustering of Fe-atoms in TiO$_2$:Fe thin films can be attributed to the formation of combined substitutional and interstitial defects. Further, the differences due to Fe doping in pellet and thin film samples can ultimately be attributed to different surface to volume ratios.
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Submitted 1 February, 2014;
originally announced February 2014.
