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Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires
Authors:
H. J. Hu,
W. L. Zhen,
S. R. Weng,
Y. D. Li,
R. Niu,
Z. L. Yue,
F. Xu,
L. Pi,
C. J. Zhang,
W. K. Zhu
Abstract:
Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here we report…
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Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here we report on the fabrication and testing of photodetectors based on exfoliated quasi-1D BiSeI thin wires. Compared with the device on bulk crystal, a significantly enhanced photoresponse is observed, which is manifested by a series of performance parameters, including ultrahigh responsivity (7 x 10$^4$ A W$^{-1}$), specific detectivity (2.5 x 10$^{14}$ Jones) and external quantum efficiency (1.8 x 10$^7$%) when $V_{\textrm {ds}}$ = 3 V, $λ$ = 515 nm and $P$ = 0.01 mW cm$^{-2}$. The conventional photoconductive effect is unlikely to account for such a superior photoresponse, which is ultimately understood in terms of the increased specific surface area and the photogating effect caused by trapping states. This work provides a perspective for the modulation of optoelectronic properties and performance in quasi-1D materials.
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Submitted 4 May, 2022;
originally announced May 2022.
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Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8
Authors:
W. L. Zhen,
W. T. Miao,
W. L. Zhu,
C. J. Zhang,
W. K. Zhu
Abstract:
In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 * 10^7 Jones) and comparably short respo…
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In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 * 10^7 Jones) and comparably short response time (τ_rise = 433 ms, τ_decay = 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm^-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta2Ni3Se8 makes it even more important in future electronic and optoelectronic applications.
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Submitted 2 April, 2022;
originally announced April 2022.
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Origin of planar Hall effect in type-II Weyl semimetal MoTe2
Authors:
D. D. Liang,
Y. J. Wang,
W. L. Zhen,
J. Yang,
S. R. Weng,
X. Yan,
Y. Y. Han,
W. Tong,
L. Pi,
W. K. Zhu,
C. J. Zhang
Abstract:
Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test the chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, the origins of PHE in various systems are not fully distinguished and understood. Here we perform a systematic study on the PHE and anisotropic MR (AMR) of Td-MoTe2, a type-II WSM. Altho…
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Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test the chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, the origins of PHE in various systems are not fully distinguished and understood. Here we perform a systematic study on the PHE and anisotropic MR (AMR) of Td-MoTe2, a type-II WSM. Although the PHE and AMR curves can be well fitted by the theoretical formulas, we demonstrate that the anisotropic resistivity arises from the orbital MR (OMR), instead of the negative MR as expected in the chiral anomaly effect. In contrast, the absence of negative MR indicates that the large OMR dominates over the chiral anomaly effect. This explains why it is difficult to measure negative MR in type-II WSMs. We argue that the measured PHE can be related with the chiral anomaly only when the negative MR is simultaneously observed.
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Submitted 4 September, 2018;
originally announced September 2018.
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Current jetting distorted planar Hall effect in a Weyl semimetal with ultrahigh mobility
Authors:
J. Yang,
W. L. Zhen,
D. D. Liang,
Y. J. Wang,
X. Yan,
S. R. Weng,
J. R. Wang,
W. Tong,
L. Pi,
W. K. Zhu,
C. J. Zhang
Abstract:
A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) is observed in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility. The perpendicular resistivity (i.e., the planar magnetic field applied normal to the current) far exceeds the zero-field resistivity, which thus rules out the possible origin of negative longitudinal magnetoresistance. The giant PHE/AMR is finally attri…
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A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) is observed in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility. The perpendicular resistivity (i.e., the planar magnetic field applied normal to the current) far exceeds the zero-field resistivity, which thus rules out the possible origin of negative longitudinal magnetoresistance. The giant PHE/AMR is finally attributed to the large anisotropic orbital magnetoresistance that stems from the ultrahigh mobility. Furthermore, the mobility-enhanced current jetting effects are found to strongly deform the line shape of the curves, and their evolution with the changing magnetic field and temperature is also studied. Although the giant PHE/AMR suggests promising applications in spintronics, the enhanced current jetting shows the other side of the coin, which needs to be considered in the future device design.
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Submitted 14 January, 2019; v1 submitted 17 July, 2018;
originally announced July 2018.
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Extreme magnetoresistance and Shubnikov-de Haas oscillations in ferromagnetic DySb
Authors:
D. D. Liang,
Y. J. Wang,
C. Y. Xi,
W. L. Zhen,
J. Yang,
L. Pi,
W. K. Zhu,
C. J. Zhang
Abstract:
The electronic structures of a representative rare earth monopnictide (i.e., DySb) under high magnetic field (i.e., in the ferromagnetic state) are studied from both experimental and theoretical aspects. A non-saturated extremely large positive magnetoresistance (XMR) is observed (as large as 3.7*10^4% at 1.8 K and 38.7 T), along with the Shubnikov-de Haas oscillations that are well reproduced by…
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The electronic structures of a representative rare earth monopnictide (i.e., DySb) under high magnetic field (i.e., in the ferromagnetic state) are studied from both experimental and theoretical aspects. A non-saturated extremely large positive magnetoresistance (XMR) is observed (as large as 3.7*10^4% at 1.8 K and 38.7 T), along with the Shubnikov-de Haas oscillations that are well reproduced by our first principles calculations. Three possible origins of XMR are examined. Although a band inversion is found theoretically, suggesting that DySb might be topologically nontrivial, it is deeply underneath the Fermi level, which rules out a topological nature of the XMR. The total densities of electron-like and hole-like carriers are not fully compensated, showing that compensation is unlikely to account for the XMR. The XMR is eventually understood in terms of high mobility that is associated with the steep linear bands. This discovery is important to the intensive studies on the XMR of rare earth monopnictides.
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Submitted 26 August, 2018; v1 submitted 25 May, 2018;
originally announced May 2018.
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Frustration induced non-Curie-Weiss paramagnetism in La3Ir3O11: a fractional-valence-state iridate
Authors:
J. Yang,
J. R. Wang,
W. L. Zhen,
L. Ma,
L. S. Ling,
W. Tong,
C. J. Zhang,
L. Pi,
W. K. Zhu
Abstract:
Experimental and theoretical studies are performed on La3Ir3O11, an iridate hosting a +4.33 fractional valence state for Ir ions and a three-dimensional frustrated structure composed of edge-shared Ir2O10 dimers. These features are expected to enhance inter-site hoppings and reduce magnetic moments of Ir ions. However, a spin-orbit driven Mott insulating transport is observed, which is supported b…
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Experimental and theoretical studies are performed on La3Ir3O11, an iridate hosting a +4.33 fractional valence state for Ir ions and a three-dimensional frustrated structure composed of edge-shared Ir2O10 dimers. These features are expected to enhance inter-site hoppings and reduce magnetic moments of Ir ions. However, a spin-orbit driven Mott insulating transport is observed, which is supported by our first principles calculations. Most importantly, geometrical frustration and competing interactions result in a non-Curie-Weiss paramagnetic ground state, revealing no magnetic order down to 2 K. This unusual state is further demonstrated by a theoretical modeling process, suggesting a possible candidate for the spin liquid state.
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Submitted 25 October, 2019; v1 submitted 20 March, 2018;
originally announced March 2018.
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Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2
Authors:
J. X. Gong,
J. Yang,
M. Ge,
Y. J. Wang,
D. D. Liang,
L. Luo,
X. Yan,
W. L. Zhen,
S. R. Weng,
L. Pi,
C. J. Zhang,
W. K. Zhu
Abstract:
Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fittings to a two-carrier model show that the magnetoresistance is strongly dependent on the residual resi…
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Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fittings to a two-carrier model show that the magnetoresistance is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping which not only breaks the balance between electron-type and hole-type carrier densities but also reduces the average carrier mobility. Thus, compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.
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Submitted 29 April, 2018; v1 submitted 29 December, 2017;
originally announced December 2017.
