Conductivity Freeze-Out in Isotopically Pure Si-28 at milli-Kelvin Temperatures
Authors:
Ben T. McAllister,
Zijun C. Zhao,
Jeremy F. Bourhill,
Maxim Goryachev,
Daniel Creedon,
Brett C. Johnson,
Michael E. Tobar
Abstract:
Silicon is a key semiconducting material for electrical devices and hybrid quantum systems where low temperatures and zero-spin isotopic purity can enhance quantum coherence. Electrical conductivity in Si is characterised by carrier freeze out at around 40 K allowing microwave transmission which is a key component for addressing spins efficiently in silicon quantum technologies. In this work, we r…
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Silicon is a key semiconducting material for electrical devices and hybrid quantum systems where low temperatures and zero-spin isotopic purity can enhance quantum coherence. Electrical conductivity in Si is characterised by carrier freeze out at around 40 K allowing microwave transmission which is a key component for addressing spins efficiently in silicon quantum technologies. In this work, we report an additional sharp transition of the electrical conductivity in a Si-28 cylindrical cavity at around 1 Kelvin. This is observed by measuring microwave resonator Whispering Gallery Mode frequencies and Q factors with changing temperature and comparing these results with finite element models. We attribute this change to a transition from a relaxation mechanism-dominated to a resonant phonon-less absorption-dominated hopping conduction regime. Characterising this regime change represents a deeper understanding of a physical phenomenon in a material of high interest to the quantum technology and semiconductor device community and the impact of these results is discussed.
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Submitted 29 April, 2024;
originally announced April 2024.
Precision Multi-Mode Dielectric Characterization of a Crystalline Perovskite Enables Determination of the Temperature-Dependent Phase Transitions
Authors:
Zijun C. Zhao,
Maxim Goryachev,
Jerzy Krupka,
Michael E. Tobar
Abstract:
Simple perovskite crystals undergo structural phase transitions on cooling to low temperatures, which significantly change the material properties of the crystal. In this work we rigorously characterize the temperature evolution of permittivity of a perovskite crystal as it undergoes phase transitions. In particular, we have undertaken precision measurements of a single crystal of Strontium Titana…
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Simple perovskite crystals undergo structural phase transitions on cooling to low temperatures, which significantly change the material properties of the crystal. In this work we rigorously characterize the temperature evolution of permittivity of a perovskite crystal as it undergoes phase transitions. In particular, we have undertaken precision measurements of a single crystal of Strontium Titanate from 294.6 K to 5.6 K, by measuring the frequency of multiple microwave transverse electric and magnetic resonant modes simultaneously. The multi-mode microwave measurement technique of resonant frequency used in this work allows high precision determination of any induced anisotropy of the permittivity as the crystal undergoes structural phase transitions. Compared with previous results we unequivocally show that the permittivity has an isotropic value of $316.3\pm2.2$ at room temperature, consistent with its well-known cubic structure, and determine the onset of dielectric anisotropy as the crystal is cooled to lower temperatures. We show that the crystal exhibits uniaxial anisotropy in the permittivity below 105 K when the structure becomes tetragonal, and exhibits biaxial anisotropy in the permittivity below 51 K when the structure becomes orthorhombic.
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Submitted 25 August, 2021; v1 submitted 17 August, 2020;
originally announced August 2020.
