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Floquet Engineering Clock Transitions in Magnetic Molecules
Authors:
Andrew Cupo,
Shuanglong Liu,
Silas Hoffman,
X. -G. Zhang,
Hai-Ping Cheng
Abstract:
We theoretically study Floquet engineering of magnetic molecules via a time-periodic magnetic field that couples to the emergent total spin of the metal center. By focusing on an $S = 1$ electronic spin Hamiltonian containing the zero-field and Zeeman terms, we demonstrate significant continuous tunability of the low-lying energy levels. Remarkably, under the action of linearly polarized Floquet c…
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We theoretically study Floquet engineering of magnetic molecules via a time-periodic magnetic field that couples to the emergent total spin of the metal center. By focusing on an $S = 1$ electronic spin Hamiltonian containing the zero-field and Zeeman terms, we demonstrate significant continuous tunability of the low-lying energy levels. Remarkably, under the action of linearly polarized Floquet controls, all three energy levels retain their stability against variations in an external static magnetic field so that any pair of renormalized energy levels forms a clock transition qubit. This property is closely linked to having a net-zero total Zeeman shift, which results from both static and effective dynamical contributions. Further physical insights are obtained from an effective Hamiltonian, derived analytically from second order van Vleck degenerate perturbation theory. Based on our theoretical predictions, experimentalists will be able to dynamically tune qubit energy gaps to values that are useful in their specific laboratory settings, while retaining the spin decoherence suppressing effect of maintaining a clock transition.
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Submitted 15 March, 2025;
originally announced March 2025.
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Microscopic theory of magnetoresistance in ferromagnetic materials
Authors:
X. -P. Zhang,
X. Wang,
Y. Yao
Abstract:
The magnetoresistance (MR) effect, which stems from the spin-exchange coupling between local moments and itinerant electrons in magnetic materials, is a challenging many-body and open-quantum problem. Here, we develop a comprehensive microscopic theory of MR from an open-quantum system perspective. The theory not only predicts the magnetic field and temperature dependencies of MR which are related…
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The magnetoresistance (MR) effect, which stems from the spin-exchange coupling between local moments and itinerant electrons in magnetic materials, is a challenging many-body and open-quantum problem. Here, we develop a comprehensive microscopic theory of MR from an open-quantum system perspective. The theory not only predicts the magnetic field and temperature dependencies of MR which are related to spin relaxation time and spin-exchange field but also obtains the universal cosine-square law of anisotropic MR that microscopically elucidates diverse MR effects from the magnon-induced spin flip, anisotropic spin relaxation, and Hanle spin precession of itinerant electrons. Moreover, we reveal fruitful behaviors of the MR effect that enable the simple detection of the microscopic spin-exchange coupling through an electrical approach. Our theory contributes to a deeper understanding of the fundamental physics underlying MR and provides insights for experiments involving magnetic materials.
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Submitted 19 June, 2024;
originally announced June 2024.
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Nonreciprocal Phonon Propagation in a Metallic Chiral Magnet
Authors:
T. Nomura,
X. -X. Zhang,
R. Takagi,
K. Karube,
A. Kikkawa,
Y. Taguchi,
Y. Tokura,
S. Zherlitsyn,
Y. Kohama,
S. Seki
Abstract:
The phonon magnetochiral effect (MChE) is the nonreciprocal acoustic and thermal transports of phonons caused by the simultaneous breaking of the mirror and time-reversal symmetries. So far, the phonon MChE has been observed only in a ferrimagnetic insulator Cu2OSeO3, where the nonreciprocal response disappears above the Curie temperature of 58 K. Here, we study the nonreciprocal acoustic properti…
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The phonon magnetochiral effect (MChE) is the nonreciprocal acoustic and thermal transports of phonons caused by the simultaneous breaking of the mirror and time-reversal symmetries. So far, the phonon MChE has been observed only in a ferrimagnetic insulator Cu2OSeO3, where the nonreciprocal response disappears above the Curie temperature of 58 K. Here, we study the nonreciprocal acoustic properties of a room-temperature ferromagnet Co9Zn9Mn2 for unveiling the phonon MChE close to the room temperature. Surprisingly, the nonreciprocity in this metallic compound is enhanced at higher temperatures and observed up to 250 K. This clear contrast between insulating Cu2OSeO3 and metallic Co9Zn9Mn2 suggests that metallic magnets have a mechanism to enhance the nonreciprocity at higher temperatures. From the ultrasound and microwave-spectroscopy experiments, we conclude that the magnitude of the phonon MChE of Co9Zn9Mn2 mostly depends on the magnon bandwidth, which increases at low temperatures and hinders the magnon-phonon hybridization. Our results suggest that the phonon nonreciprocity could be further enhanced by engineering the magnon band of materials.
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Submitted 8 April, 2023; v1 submitted 30 November, 2022;
originally announced December 2022.
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Universal quantum operation of spin-3/2 Blume-Capel chains
Authors:
Silas Hoffman,
Yiyuan Chen,
Hai-Ping Cheng,
X. -G. Zhang
Abstract:
We propose a logical qubit based on the Blume-Capel model: a higher spin generalization of the Ising chain and which allows for an on-site anisotropy preserving rotational invariance around the Ising axis. We show that such a spin-3/2 Blume-Capel model can also support localized Majorana bound states at the ends of the chain. Inspired by known braiding protocols of these Majorana bound states, upo…
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We propose a logical qubit based on the Blume-Capel model: a higher spin generalization of the Ising chain and which allows for an on-site anisotropy preserving rotational invariance around the Ising axis. We show that such a spin-3/2 Blume-Capel model can also support localized Majorana bound states at the ends of the chain. Inspired by known braiding protocols of these Majorana bound states, upon appropriate manipulation of the system parameters, we demonstrate a set of universal gate operations which act on qubits encoded in the doubly degenerate ground states of the chain.
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Submitted 26 April, 2021;
originally announced April 2021.
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Phonon Magnetochiral Effect
Authors:
T. Nomura,
X. -X. Zhang,
S. Zherlitsyn,
J. Wosnitza,
Y. Tokura,
N. Nagaosa,
S. Seki
Abstract:
Magnetochiral effect (MChE) of phonons, a nonreciprocal acoustic property arising due to the symmetry principles, is demonstrated in a chiral-lattice ferrimagnet Cu$_2$OSeO$_3$. Our high-resolution ultrasound experiments reveal that the sound velocity differs for parallel and antiparallel propagation with respect to the external magnetic field.The sign of the nonreciprocity depends on the chiralit…
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Magnetochiral effect (MChE) of phonons, a nonreciprocal acoustic property arising due to the symmetry principles, is demonstrated in a chiral-lattice ferrimagnet Cu$_2$OSeO$_3$. Our high-resolution ultrasound experiments reveal that the sound velocity differs for parallel and antiparallel propagation with respect to the external magnetic field.The sign of the nonreciprocity depends on the chirality of the crystal in accordance with the selection rule of the MChE. The nonreciprocity is enhanced below the magnetic ordering temperature and at higher ultrasound frequencies, which is quantitatively explained by a proposed magnon-phonon hybridization mechanism.
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Submitted 24 September, 2018;
originally announced September 2018.
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Tunneling Field-Effect Junctions with WS$_2$ barrier
Authors:
Xiang-Guo Li,
Yun-Peng Wang,
X. -G. Zhang,
Hai-Ping Cheng
Abstract:
Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor (TFET) formed from atomic precision vertical stacks of graphene and insulating crystals of a few atomic layers in thickness. We report first-principles study of the electronic properties of the Graphene/WS$_2$/Graphene…
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Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor (TFET) formed from atomic precision vertical stacks of graphene and insulating crystals of a few atomic layers in thickness. We report first-principles study of the electronic properties of the Graphene/WS$_2$/Graphene sandwich structure revealing strong interface effects on dielectric properties and predicting a high ON/OFF ratio with an appropriate WS$_2$ thickness and a suitable range of the gate voltage. Both the band spin-orbit coupling splitting and the dielectric constant of the WS$_2$ layer depend on its thickness when in contact with the graphene electrodes, indicating strong influence from graphene across the interfaces. The dielectric constant is significantly reduced from the bulk WS$_2$ value. The effective barrier height varies with WS$_2$ thickness and can be tuned by a gate voltage. These results are critical for future nanoelectronic device designs.
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Submitted 2 May, 2017;
originally announced May 2017.
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Gap state charge induced spin-dependent negative differential resistance in tunnel junctions
Authors:
Jun Jiang,
X. -G. Zhang,
X. F. Han
Abstract:
We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO$_x$ or Mg$_{1-x}$Al$_x$O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to t…
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We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO$_x$ or Mg$_{1-x}$Al$_x$O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.
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Submitted 5 April, 2016;
originally announced April 2016.
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Spin-flip noise due to nonequilibrium spin accumulation
Authors:
Liang Liu,
Jiasen Niu,
Huiqiang Guo,
Jian Wei,
D. L. Li,
J. F. Feng,
X. F. Han,
J. M. D. Coey,
X. -G. Zhang
Abstract:
When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance…
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When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance fluctuations ($S_R$) which a passively applied current ($I$) converts to measurable voltage fluctuations ($S_{V}=I^{2}S_{R}$). We treat the LFN associated with spin accumulation as a nonequilibrium effect, and find that the noise power can be fitted in terms of the spin-polarized current by $S_{I}f=aI\coth(\frac{I}{b})-ab$, resembling the form of the shot noise for a tunnel junction, but with current now taking the role of the bias voltage, and spin-flip probability taking the role of tunneling probability.
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Submitted 22 December, 2015;
originally announced December 2015.
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Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors. Application to capture cross sections
Authors:
Georgios D. Barmparis,
Yevgeniy S. Puzyrev,
X. -G. Zhang,
Sokrates T. Pantelides
Abstract:
Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major issue in the performance of solar cells and light-emitting diodes. A theory of nonradiative inelastic scattering by defects, however, is non-existent, while the t…
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Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major issue in the performance of solar cells and light-emitting diodes. A theory of nonradiative inelastic scattering by defects, however, is non-existent, while the the- ory for carrier capture by defects has had a long and arduous history. Here we report the construction of a comprehensive theory of inelastic scattering by defects, with carrier capture being a special case. We distinguish between capture under thermal equilibrium conditions and capture under non-equilibrium conditions, e.g., in the presence of electrical current or hot carriers where carriers undergo scattering by defects and are described by a mean free path. In the thermal-equilibrium case, capture is mediated by a non-adiabatic perturbation Hamiltonian, originally identified by Huang and Rhys and by Kubo, which is equal to linear electron-phonon coupling to first order. In the non-equilibrium case, we demonstrate that the primary capture mechanism is within the Born-Oppenheimer approximation, with coupling to the defect potential inducing Franck-Condon electronic transitions, followed by multiphonon dissipation of the transition energy, while the non-adiabatic terms are of secondary importance. We report density-functional-theory calculations of the capture cross section for a prototype defect using the Projector-Augmented-Wave which allows us to employ all-electron wavefunctions. We adopt a Monte Carlo scheme to sample multiphonon configurations and obtain converged results. The theory and the results represent a foundation upon which to build engineering-level models for hot-electron degradation of power devices and the performance of solar cells and light-emitting diodes.
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Submitted 21 August, 2015; v1 submitted 27 June, 2015;
originally announced June 2015.
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Electronic resistances of multilayered two-dimensional crystal junctions
Authors:
Yun-Peng Wang,
X. -G. Zhang,
J. N. Fry,
Hai-Ping Cheng
Abstract:
We carry out a layer-by-layer investigation to understand electron transport across metal-insulator-metal junctions. Interfacial structures of junctions were studied and characterized using first-principles density functional theory within the generalized gradient approximation. We found that as a function of the number of crystal layers the calculated transmission coefficients of multilayer silic…
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We carry out a layer-by-layer investigation to understand electron transport across metal-insulator-metal junctions. Interfacial structures of junctions were studied and characterized using first-principles density functional theory within the generalized gradient approximation. We found that as a function of the number of crystal layers the calculated transmission coefficients of multilayer silicene junctions decay much slower than for BN-based junctions We revisited the semiclassical Boltzmann theory of electronic transport and applied to multilayer silicene and BN-based junctions. The calculated resistance in the high-transmission regime is smaller than that provided by the Landauer formula. As the thickness of the barrier increases, results from the Boltzmann and the Landauer formulae converge. We provide a upper limit in the transmission coefficient below which, the Landauer method becomes valid. Quantitatively, when the transmission coefficient is lower than $ \sim 0.05 $ per channel, the error introduced by the Landauer formula for calculating the resistance is negligible. In addition, we found that the resistance of a junction is not entirely determined by the averaged transmission, but also by the distribution of the transmission over the first Brillouin zone.
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Submitted 3 June, 2015;
originally announced June 2015.
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Electron transport in graphene/graphene side-contact junction by plane-wave multiple scattering method
Authors:
Xiang-Guo Li,
Iek-Heng Chu,
X. -G. Zhang,
Hai-Ping Cheng
Abstract:
Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such geometry presents a challenge to first-principles transport methods. We solve this problem by implementing a plane-wave based multiple scattering theory for elect…
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Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such geometry presents a challenge to first-principles transport methods. We solve this problem by implementing a plane-wave based multiple scattering theory for electron transport. This implementation improves the computational efficiency over the existing plane-wave transport code, scales better for parallelization over large number of nodes, and does not require the current direction to be along a lattice axis. As a first application, we calculate the tunneling current through a side-contact graphene junction formed by two separate graphene sheets with the edges overlapping each other. We find that transport properties of this junction depend strongly on the AA or AB stacking within the overlapping region as well as the vacuum gap between two graphene sheets. Such transport behaviors are explained in terms of carbon orbital orientation, hybridization, and delocalization as the geometry is varied.
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Submitted 6 April, 2015;
originally announced April 2015.
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Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by zero bias anomaly measurements
Authors:
Liang Liu,
Jiasen Niu,
Li Xiang,
Jian Wei,
D. -L. Li,
J. -F. Feng,
X. -F. Han,
X. -G. Zhang,
J. M. D. Coey
Abstract:
We provide conclusive experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI), clarifying a long standing issue. Magnon effect that caused confusion is now excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of con…
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We provide conclusive experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI), clarifying a long standing issue. Magnon effect that caused confusion is now excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to $\ln{(eV/k_{B}T)}$, consistent with the Altshuler-Aronov theory of tunneling that describes the reduction of density of states due to EEI, but inconsistent with magnetic impurity scattering. The slope of the $\ln{(eV/k_{B}T)}$ dependence is symmetry dependent: the slopes for P and AP states are different for coherent tunnel junctions with symmetry filtering, while nearly the same for those without symmetry filtering (amorphous barriers). This observation may be helpful for verifying symmetry preserved filtering in search of new coherent tunneling junctions, and for probing and separating electron Bloch states of different symmetries in other correlated systems.
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Submitted 16 October, 2014; v1 submitted 14 October, 2014;
originally announced October 2014.
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Friedel Oscillation-Induced Energy Gap Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries
Authors:
Kendal W. Clark,
X. -G. Zhang,
Gong Gu,
Jewook Park,
Guowei He,
R. M. Feenstra,
An-Ping Li
Abstract:
We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two sides of the interface are different, a nonequlibrium effect - shifting of these gaps under bias - leads to asymmetric transport upon reversing the bias polarity. The predicted transport asymmetry is revealed by scannin…
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We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two sides of the interface are different, a nonequlibrium effect - shifting of these gaps under bias - leads to asymmetric transport upon reversing the bias polarity. The predicted transport asymmetry is revealed by scanning tunneling potentiometry at monolayer-bilayer interfaces in epitaxial graphene on SiC (0001). This intriguing interfacial transport behavior opens a new avenue towards novel quantum functions such as quantum switching.
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Submitted 8 January, 2014;
originally announced January 2014.
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Coherent electron transport through an azobenzene molecule: A light-driven molecular switch
Authors:
Chun Zhang,
M. -H. Du,
H. -P. Cheng,
X. -G. Zhang,
A. E. Roitberg,
J. L. Krause
Abstract:
We apply a first-principles computational approach to study a light-sensitive molecular switch. The molecule that comprises the switch can convert between a trans and a cis configuration upon photo-excitation. We find that the conductance of the two isomers vary dramatically, which suggests that this system has potential application as a molecular device. A detailed analysis of the band structure…
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We apply a first-principles computational approach to study a light-sensitive molecular switch. The molecule that comprises the switch can convert between a trans and a cis configuration upon photo-excitation. We find that the conductance of the two isomers vary dramatically, which suggests that this system has potential application as a molecular device. A detailed analysis of the band structure of the metal leads and the local density of states of the system reveals the mechanism of the switch.
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Submitted 22 November, 2013;
originally announced November 2013.
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Active control of magnetoresistance of organic spin valves using ferroelectricity
Authors:
Dali Sun,
Mei Fang,
Xiaoshan Xu,
Lu Jiang,
Hangwen Guo,
Yanmei Wang,
Wenting Yang,
Lifeng Yin,
Paul C. Snijders,
T. Z. Ward,
Zheng Gai,
X. -G. Zhang,
Ho Nyung Lee,
Jian Shen
Abstract:
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here…
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Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.
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Submitted 10 February, 2014; v1 submitted 8 April, 2013;
originally announced April 2013.
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Effect of distribution of stickers along backbone on temperature-dependent structural properties in associative polymer solutions
Authors:
X. -G. Han,
X. -F. Zhang,
Y. -H. Ma
Abstract:
Effect of distribution of stickers along the backbone on structural properties in associating polymer solutions is studied using self-consistent field lattice model. Only two inhomogeneous morphologies, i.e., microfluctuation homogenous (MFH) and micelle morphologies, are observed. If the system is cooled, the solvent content within the aggregates decreases. When the spacing of stickers along the…
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Effect of distribution of stickers along the backbone on structural properties in associating polymer solutions is studied using self-consistent field lattice model. Only two inhomogeneous morphologies, i.e., microfluctuation homogenous (MFH) and micelle morphologies, are observed. If the system is cooled, the solvent content within the aggregates decreases. When the spacing of stickers along the backbone is increased the temperature-dependent range of aggregation in MFH morphology and half-width of specific heat peak for homogenous solutions-MFH transition increase, and the symmetry of the peak decreases. However, with increasing spacing of stickers, the above three corresponding quantities related to micelles behave differently. It is demonstrated that the broad nature of the observed transitions can be ascribed to the structural changes which accompany the replacement of solvents in aggregates by polymer, which is consistent with the experimental conclusion. It is found that different effect of spacing of stickers on the two transitions can be interpreted in terms of intrachain and interchain associations.
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Submitted 5 October, 2012;
originally announced October 2012.
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In-Plane Orbital Texture Switch at the Dirac Point in the Topological Insulator Bi2Se3
Authors:
Yue Cao,
J. A. Waugh,
X. -W. Zhang,
J. -W. Luo,
Q. Wang,
T. J. Reber,
S. K. Mo,
Z. Xu,
A. Yang,
J. Schneeloch,
G. Gu,
M. Brahlek,
N. Bansal,
S. Oh,
A. Zunger,
Daniel S. Dessau
Abstract:
Topological insulators are novel macroscopic quantum-mechanical phase of matter, which hold promise for realizing some of the most exotic particles in physics as well as application towards spintronics and quantum computation. In all the known topological insulators, strong spin-orbit coupling is critical for the generation of the protected massless surface states. Consequently, a complete descrip…
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Topological insulators are novel macroscopic quantum-mechanical phase of matter, which hold promise for realizing some of the most exotic particles in physics as well as application towards spintronics and quantum computation. In all the known topological insulators, strong spin-orbit coupling is critical for the generation of the protected massless surface states. Consequently, a complete description of the Dirac state should include both the spin and orbital (spatial) parts of the wavefunction. For the family of materials with a single Dirac cone, theories and experiments agree qualitatively, showing the topological state has a chiral spin texture that changes handedness across the Dirac point (DP), but they differ quantitatively on how the spin is polarized. Limited existing theoretical ideas predict chiral local orbital angular momentum on the two sides of the DP. However, there have been neither direct measurements nor calculations identifying the global symmetry of the spatial wavefunction. Here we present the first results from angle-resolved photoemission experiment and first-principles calculation that both show, counter to current predictions, the in-plane orbital wavefunctions for the surface states of Bi2Se3 are asymmetric relative to the DP, switching from being tangential to the k-space constant energy surfaces above DP, to being radial to them below the DP. Because the orbital texture switch occurs exactly at the DP this effect should be intrinsic to the topological physics, constituting an essential yet missing aspect in the description of the topological Dirac state. Our results also indicate that the spin texture may be more complex than previously reported, helping to reconcile earlier conflicting spin resolved measurements.
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Submitted 5 September, 2012;
originally announced September 2012.
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Effects of polymer concentration and chain length on aggregation in physically associating polymer solutions
Authors:
X. -G. Han,
X. -F. Zhang,
Y. -H. Ma,
C. -X. Zhang,
Y. -B. Guan
Abstract:
The effects of polymer concentration and chain length on aggregation in associative polymer solutions, are studied using self-consistent field lattice model. Only two inhomogenous morphologies, i.e. microfluctuation homogenous (MFH) and micelle morphologies, are observed in the systems with different chain lengths. The temperatures at which the above two inhomogenous morphologies first appear, whi…
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The effects of polymer concentration and chain length on aggregation in associative polymer solutions, are studied using self-consistent field lattice model. Only two inhomogenous morphologies, i.e. microfluctuation homogenous (MFH) and micelle morphologies, are observed in the systems with different chain lengths. The temperatures at which the above two inhomogenous morphologies first appear, which are denoted by T_MFH and T_m, respectively, are dependent on polymer concentration and chain length. The variation of the logarithm of critical MFH concentration with the logarithm of chain length fulfils a linear-fitting relationship with a slope equaling -1. Furthermore, the variation of the average volume fraction of stickers at the micellar core (AVFSM) with polymer concentration and chain length is focused in the system at T_m. It is founded by calculations that the above behavior of AVFSM, is explained in terms of intrachain and interchain associations.
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Submitted 21 February, 2012;
originally announced February 2012.
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Terahertz Response of Field-Effect Transistors in Saturation Regime
Authors:
T. A. Elkhatib,
V. Yu. Kachorovskii,
W. J. Stillman,
S. Rumyantsev,
X. -C. Zhang,
M. S. Shur
Abstract:
We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain bias current) and reach very high values up to 170V/W. We also develop a phenomenological theory valid both in the ohmic and in the saturation regimes.
We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain bias current) and reach very high values up to 170V/W. We also develop a phenomenological theory valid both in the ohmic and in the saturation regimes.
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Submitted 21 April, 2010;
originally announced April 2010.
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Water Vapor: An Extraordinary Terahertz Wave Source under Optical Excitation
Authors:
Keith Johnson,
Matthew Price-Gallagher,
Orval Mamer,
Alain Lesimple,
Clark Fletcher,
Yunqing Chen,
Xiaofei Lu,
Masashi Yamaguchi,
X. -C. Zhang
Abstract:
In modern terahertz (THz) sensing and imaging spectroscopy, water is considered a nemesis to be avoided due to strong absorption in the THz frequency range. Here we report the first experimental demonstration and theoretical implications of using femtosecond laser pulses to generate intense broadband THz emission from water vapor. When we focused an intense laser pulse in water vapor contained i…
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In modern terahertz (THz) sensing and imaging spectroscopy, water is considered a nemesis to be avoided due to strong absorption in the THz frequency range. Here we report the first experimental demonstration and theoretical implications of using femtosecond laser pulses to generate intense broadband THz emission from water vapor. When we focused an intense laser pulse in water vapor contained in a gas cell or injected from a gas jet nozzle, an extraordinarily strong THz field from optically excited water vapor is observed. Water vapor has more than 50% greater THz generation efficiency than dry nitrogen. It had previously been assumed that the nonlinear generation of THz waves in this manner primarily involves a free-electron plasma, but we show that the molecular structure plays an essential role in the process. In particular, we found that THz wave generation from H2O vapor is significantly stronger than that from D2O vapor. Vibronic activities of water cluster ions, occurring naturally in water vapor, may possibly contribute to the observed isotope effect along with rovibrational contributions from the predominant monomers.
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Submitted 11 February, 2009;
originally announced February 2009.
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Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films
Authors:
Zhong-Yi Lu,
X. -G. Zhang,
Sokrates T. Pantelides
Abstract:
Quantum-well (QW) states in {\it nonmagnetic} metal layers contained in magnetic multilayers are known to be important in spin-dependent transport, but the role of QW states in {\it magnetic} layers remains elusive. Here we identify the conditions and mechanisms for resonant tunneling through QW states in magnetic layers and determine candidate structures. We report first-principles calculations…
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Quantum-well (QW) states in {\it nonmagnetic} metal layers contained in magnetic multilayers are known to be important in spin-dependent transport, but the role of QW states in {\it magnetic} layers remains elusive. Here we identify the conditions and mechanisms for resonant tunneling through QW states in magnetic layers and determine candidate structures. We report first-principles calculations of spin-dependent transport in epitaxial Fe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr tunnel junctions. We demonstrate the formation of sharp QW states in the Fe layer and show discrete conductance jumps as the QW states enter the transport window with increasing bias. At resonance, the current increases by one to two orders of magnitude. The tunneling magnetoresistance ratio is several times larger than in simple spin tunnel junctions and is positive (negative) for majority- (minority-) spin resonances, with a large asymmetry between positive and negative biases. The results can serve as the basis for novel spintronic devices.
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Submitted 9 November, 2004;
originally announced November 2004.
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Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions
Authors:
X. -G. Zhang,
W. H. Butler
Abstract:
By use of first-principles electronic structure calculations, we predict that the magnetoresistance of the bcc Co(100)/MgO(100)/bcc Co(100) and FeCo(100)/MgO(100)/FeCo(100) tunneling junctions can be several times larger than the very large magnetoresistance predicted for the Fe(100)/MgO(100)/Fe(100) system. The origin of this large magnetoresistance can be understood using simple physical argum…
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By use of first-principles electronic structure calculations, we predict that the magnetoresistance of the bcc Co(100)/MgO(100)/bcc Co(100) and FeCo(100)/MgO(100)/FeCo(100) tunneling junctions can be several times larger than the very large magnetoresistance predicted for the Fe(100)/MgO(100)/Fe(100) system. The origin of this large magnetoresistance can be understood using simple physical arguments by considering the electrons at the Fermi energy travelling perpendicular to the interfaces. For the minority spins there is no state with $Δ_1$ symmetry whereas for the majority spins there is only a $Δ_1$ state. The $Δ_1$ state decays much more slowly than the other states within the MgO barrier. In the absence of scattering which breaks the conservation of momentum parallel to the interfaces, the electrons travelling perpendicular to the interfaces undergo total reflection if the moments of the electrodes are anti-parallel. These arguments apply equally well to systems with other well ordered tunnel barriers and for which the most slowly decaying complex energy band in the barrier has $Δ_1$ symmetry. Examples include systems with (100) layers constructed from Fe, bcc Co, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
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Submitted 7 September, 2004;
originally announced September 2004.
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Spin symmetry and spin current of helicity eigenstates of the Luttinger Hamiltonian
Authors:
Xindong Wang,
X. -G. Zhang
Abstract:
A general spin symmetry argument is proposed for spin currents in semiconductors. In particular, due to the symmetry with respect to spin polarization of the helicity eigenstates of the Luttinger Hamiltonian for a hole-doped semiconductor, the spin polarized flux from a single helicity eigenstate induced by an external electric field, is canceled exactly when all such contributions from eigensta…
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A general spin symmetry argument is proposed for spin currents in semiconductors. In particular, due to the symmetry with respect to spin polarization of the helicity eigenstates of the Luttinger Hamiltonian for a hole-doped semiconductor, the spin polarized flux from a single helicity eigenstate induced by an external electric field, is canceled exactly when all such contributions from eigenstates that are degenerate in energy are summed. Thus, the net spin current predicted by Murakami et al, Science 301, 1348 (2003), cannot be produced by such a Hamiltonian. Possible symmetry breaking mechanisms which may generate a spin current are discussed.
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Submitted 27 July, 2004;
originally announced July 2004.
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Low temperature resistivity in a nearly half-metallic ferromagnet
Authors:
Xindong Wang,
X. -G. Zhang
Abstract:
We consider electron transport in a nearly half-metallic ferromagnet, in which the minority spin electrons close to the band edge at the Fermi energy are Anderson-localized due to disorder. For the case of spin-flip scattering of the conduction electrons due to the absorption and emission of magnons, the Boltzmann equation is exactly soluble to the linear order. From this solution we calculate t…
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We consider electron transport in a nearly half-metallic ferromagnet, in which the minority spin electrons close to the band edge at the Fermi energy are Anderson-localized due to disorder. For the case of spin-flip scattering of the conduction electrons due to the absorption and emission of magnons, the Boltzmann equation is exactly soluble to the linear order. From this solution we calculate the temperature dependence of the resistivity due to single magnon processes at sufficiently low temperature, namely $k_BT\ll D/L^2$, where $L$ is the Anderson localization length and $D$ is the magnon stiffness. And depending on the details of the minority spin density of states at the Fermi level, we find a $T^{1.5}$ or $T^{2}$ scaling behavior for resistivity. Relevance to the doped perovskite manganite systems is discussed.
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Submitted 16 July, 1998;
originally announced July 1998.
