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Magnetic structure and magnetoelectric coupling in antiferromagnet Co5(TeO3)4Cl2
Authors:
B. Yu,
L. Huang,
J. S. Li,
L. Lin,
V. Ovidiu Garlea,
Q. Zhang,
T. Zou,
J. C. Zhang,
J. Peng,
Y. S. Tang,
G. Z. Zhou,
J. H. Zhang,
S. H. Zheng,
M. F. Liu,
Z. B. Yan,
X. H. Zhou,
S. Dong,
J. G. Wan,
J. -M. Liu
Abstract:
The van der Waals (vdW) layered multiferroics, which host simultaneous ferroelectric and magnetic orders, have attracted attention not only for their potentials to be utilized in nanoelectric devices and spintronics, but also offer alternative opportunities for emergent physical phenomena. To date, the vdW layered multiferroic materials are still very rare. In this work, we have investigated the m…
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The van der Waals (vdW) layered multiferroics, which host simultaneous ferroelectric and magnetic orders, have attracted attention not only for their potentials to be utilized in nanoelectric devices and spintronics, but also offer alternative opportunities for emergent physical phenomena. To date, the vdW layered multiferroic materials are still very rare. In this work, we have investigated the magnetic structure and magnetoelectric effects in Co5(TeO3)4Cl2, a promising new multiferroic compound with antiferromagnetic (AFM) Neel point TN = 18 K. The neutron powder diffraction reveals the non-coplanar AFM state with preferred Neel vector along the c-axis, while a spin re-orientation occurring between 8 K and 15 K is identified, which results from the distinct temperature dependence of the non-equivalent Co sites moment in Co5(TeO3)4Cl2. What is more, it is found that Co5(TeO3)4Cl2 is one of the best vdW multiferroics studied so far in terms of the multiferroic performance. The measured linear ME coefficient exhibits the emergent oscillation dependence of the angle between magnetic field and electric field, and the maximal value is as big as 45 ps/m. It is suggested that Co5(TeO3)4Cl2 is an appreciated platform for exploring the emergent multiferroicity in vdW layered compounds.
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Submitted 15 May, 2024;
originally announced May 2024.
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Electrically controlled water permeation through graphene oxide membranes
Authors:
K. -G. Zhou,
K. S. Vasu,
C. T. Cherian,
M. Neek-Amal,
J. C. Zhang,
H. Ghorbanfekr-Kalashami,
K. Huang,
O. P. Marshall,
V. G. Kravets,
J. Abraham,
Y. Su,
A. N. Grigorenko,
A. Pratt,
A. K. Geim,
F. M. Peeters,
K. S. Novoselov,
R. R. Nair
Abstract:
Developing 'smart' membranes that allow precise and reversible control of molecular permeation using external stimuli would be of intense interest for many areas of science: from physics and chemistry to life-sciences. In particular, electrical control of water permeation through membranes is a long-sought objective and is of crucial importance for healthcare and related areas. Currently, such adj…
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Developing 'smart' membranes that allow precise and reversible control of molecular permeation using external stimuli would be of intense interest for many areas of science: from physics and chemistry to life-sciences. In particular, electrical control of water permeation through membranes is a long-sought objective and is of crucial importance for healthcare and related areas. Currently, such adjustable membranes are limited to the modulation of wetting of the membranes and controlled ion transport, but not the controlled mass flow of water. Despite intensive theoretical work yielding conflicting results, the experimental realisation of electrically controlled water permeation has not yet been achieved. Here we report electrically controlled water permeation through micrometre-thick graphene oxide (GO) membranes. By controllable electric breakdown, conductive filaments are created in the GO membrane. The electric field concentrated around such current carrying filaments leads to controllable ionisation of water molecules in graphene capillaries, allowing precise control of water permeation: from ultrafast permeation to complete blocking. Our work opens up an avenue for developing smart membrane technologies and can revolutionize the field of artificial biological systems, tissue engineering and filtration.
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Submitted 16 May, 2018;
originally announced May 2018.
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Ultrathin graphene-based membrane with precise molecular sieving and ultrafast solvent permeation
Authors:
Q. Yang,
Y. Su,
C. Chi,
C. T. Cherian,
K. Huang,
V. G. Kravets,
F. C. Wang,
J. C. Zhang,
A. Pratt,
A. N. Grigorenko,
F. Guinea,
A. K Geim,
R. R. Nair
Abstract:
Graphene oxide (GO) membranes continue to attract intense interest due to their unique molecular sieving properties combined with fast permeation rates. However, the membranes' use has been limited mostly to aqueous solutions because GO membranes appear to be impermeable to organic solvents, a phenomenon not fully understood yet. Here, we report efficient and fast filtration of organic solutions t…
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Graphene oxide (GO) membranes continue to attract intense interest due to their unique molecular sieving properties combined with fast permeation rates. However, the membranes' use has been limited mostly to aqueous solutions because GO membranes appear to be impermeable to organic solvents, a phenomenon not fully understood yet. Here, we report efficient and fast filtration of organic solutions through GO laminates containing smooth two-dimensional (2D) capillaries made from flakes with large sizes of ~ 10-20 micron. Without sacrificing their sieving characteristics, such membranes can be made exceptionally thin, down to ~ 10 nm, which translates into fast permeation of not only water but also organic solvents. We attribute the organic solvent permeation and sieving properties of ultrathin GO laminates to the presence of randomly distributed pinholes that are interconnected by short graphene channels with a width of 1 nm. With increasing the membrane thickness, the organic solvent permeation rates decay exponentially but water continues to permeate fast, in agreement with previous reports. The application potential of our ultrathin laminates for organic-solvent nanofiltration is demonstrated by showing >99.9% rejection of various organic dyes with small molecular weights dissolved in methanol. Our work significantly expands possibilities for the use of GO membranes in purification, filtration and related technologies.
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Submitted 15 September, 2017;
originally announced October 2017.
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Electronic structure of FeS
Authors:
J. Miao,
X. H. Niu,
D. F. Xu,
Q. Yao,
Q. Y. Chen,
T. P. Ying,
S. Y. Li,
Y. F. Fang,
J. C. Zhang,
S. Ideta,
K. Tanaka,
B. P. Xie,
D. L. Feng,
Fei Chen
Abstract:
Here we report the electronic structure of FeS, a recently identified iron-based superconductor. Our high-resolution angle-resolved photoemission spectroscopy studies show two hole-like ($α$ and $β$) and two electron-like ($η$ and $δ$) Fermi pockets around the Brillouin zone center and corner, respectively, all of which exhibit moderate dispersion along $k_z$. However, a third hole-like band (…
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Here we report the electronic structure of FeS, a recently identified iron-based superconductor. Our high-resolution angle-resolved photoemission spectroscopy studies show two hole-like ($α$ and $β$) and two electron-like ($η$ and $δ$) Fermi pockets around the Brillouin zone center and corner, respectively, all of which exhibit moderate dispersion along $k_z$. However, a third hole-like band ($γ$) is not observed, which is expected around the zone center from band calculations and is common in iron-based superconductors. Since this band has the highest renormalization factor and is known to be the most vulnerable to defects, its absence in our data is likely due to defect scattering --- and yet superconductivity can exist without coherent quasiparticles in the $γ$ band. This may help resolve the current controversy on the superconducting gap structure of FeS. Moreover, by comparing the $β$ bandwidths of various iron chalcogenides, including FeS, FeSe$_{1-x}$S$_x$, FeSe, and FeSe$_{1-x}$ Te$_x$, we find that the $β$ bandwidth of FeS is the broadest. However, the band renormalization factor of FeS is still quite large, when compared with the band calculations, which indicates sizable electron correlations. This explains why the unconventional superconductivity can persist over such a broad range of isovalent substitution in FeSe$_{1-x}$Te$_{x}$ and FeSe$_{1-x}$S$_{x}$.
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Submitted 25 March, 2017;
originally announced March 2017.
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Orientation and strain modulated electronic structures in puckered arsenene nanoribbons
Authors:
Z. Y. Zhang,
H. N. Cao,
J. C. Zhang,
Y. H. Wang,
D. S. Xue,
M. S. Si
Abstract:
Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the…
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Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the nanoribbons also induces a direct bandgap and simultaneously modulates effectively the transport property. The gap energy is largely enhanced by applying tensile strains to the armchair structures. In the zigzag ones, a tensile strain makes the effective mass of holes much higher while a compressive strain cause it much lower than that of electrons. Our results are crutial to understand and engineer the electronic properties of two dimensional materials beyond the planar ones like graphene.
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Submitted 5 February, 2015; v1 submitted 24 January, 2015;
originally announced January 2015.
