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The equilibrium distribution function for strongly nonlinear systems
Authors:
Jialin Zhang,
Yong Zhang,
Hong Zhao
Abstract:
The equilibrium distribution function determines macroscopic observables in statistical physics. While conventional methods correct equilibrium distributions in weakly nonlinear or near-integrable systems, they fail in strongly nonlinear regimes. We develop a framework to get the equilibrium distributions and dispersion relations in strongly nonlinear many-body systems, incorporating corrections b…
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The equilibrium distribution function determines macroscopic observables in statistical physics. While conventional methods correct equilibrium distributions in weakly nonlinear or near-integrable systems, they fail in strongly nonlinear regimes. We develop a framework to get the equilibrium distributions and dispersion relations in strongly nonlinear many-body systems, incorporating corrections beyond the random phase approximation and capturing intrinsic nonlinear effects. The theory is verified on the nonlinear Schrodinger equation, the Majda-McLaughlin-Tabak model, and the FPUT-beta model, demonstrating its accuracy across distinct types of nonlinear systems. Numerical results show substantial improvements over existing approaches, even in strong nonlinear regimes. This work establishes a theoretical foundation for equilibrium statistical properties in strongly nonlinear systems.
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Submitted 10 July, 2025;
originally announced July 2025.
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Nodeless superconductivity in 4H$_{b}$-TaS$_{2}$ with broken time reversal symmetry
Authors:
Yuwei Zhou,
Fanyu Meng,
Yanen Huang,
Jiawen Zhang,
Jin Zhan,
Ye Chen,
Yu Liu,
Hechang Lei,
Michael Smidman,
Huiqiu Yuan
Abstract:
The transition metal dichalcogenide 4H$_{b}$-TaS$_{2}$ exhibits characteristics of topological edge modes and two-component superconductivity with time-reversal symmetry breaking (TRSB). The nature of the superconducting order parameter is a crucial issue that requires experimental investigation. Here, we report measurements of the magnetic penetration depth using a tunnel-diode-oscillator based t…
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The transition metal dichalcogenide 4H$_{b}$-TaS$_{2}$ exhibits characteristics of topological edge modes and two-component superconductivity with time-reversal symmetry breaking (TRSB). The nature of the superconducting order parameter is a crucial issue that requires experimental investigation. Here, we report measurements of the magnetic penetration depth using a tunnel-diode-oscillator based technique, as well as the specific heat. Both the specific heat and the change in magnetic penetration depth ($Δ$$λ$(T)) display an exponentially-activated temperature dependence, providing evidence for nodeless superconductivity in 4H$_{b}$-TaS$_{2}$. Moreover, the deduced superfluid density can be well described by a two-gap $s$-wave model, and such multigap superconductivity is consistent with there being multiple bands crossing the Fermi energy. These results constrain the possible pairing symmetries of 4H$_{b}$-TaS$_{2}$.
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Submitted 10 July, 2025;
originally announced July 2025.
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Origin of insulating-like behavior of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ under pressure: A first-principles study
Authors:
Xin Du,
Jian-Feng Zhang,
Zhong-Yi Lu,
Kai Liu
Abstract:
Recent experimental study on Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ superconductors has revealed an unexpected quantum phase transition from superconducting state to insulatinglike state under pressure [Zhou et al., Nat. Phys. 18, 406 (2022)]. To better understand the physical origin of this pressure-induced phenomenon, here we have studied the structural, electronic, and magnetic properties of undoped and…
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Recent experimental study on Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ superconductors has revealed an unexpected quantum phase transition from superconducting state to insulatinglike state under pressure [Zhou et al., Nat. Phys. 18, 406 (2022)]. To better understand the physical origin of this pressure-induced phenomenon, here we have studied the structural, electronic, and magnetic properties of undoped and O-doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (Bi2212) under pressures based on density-functional theory calculations. We first identified the crystal structure of undoped Bi2212 with the armchair distortions in the BiO layers and reproduced the insulating feature of the parent compound. Then we added an extra O atom to the parent compound to simulate the hole-doping effect and found that the structure with O dopant located in the van der Waals (vdW) gap is energetically the most stable. Further calculations on O-doped (0.125 holes/Cu) Bi2212 revealed that the pressure can induce charge redistributions between CuO$_2$ planes and BiO layers; specifically, Cu-$d_{x^2-y^2}$ orbitals gain electrons and Cu atoms rather than O atoms dominate around the Fermi level under high pressure. Along with the increasing pressure, the density of states at the Fermi level first reaches the maximum at $\sim$ 10 GPa and then shows a valley near the Fermi level above 20 GPa, which may be responsible for the insulatinglike state observed in recent experiments. We suggest that the competition among several factors, such as the increase of electrons in the CuO$_2$ plane, the variation of in-plane hopping due to the shortened Cu-O distance, and the enhanced Coulomb repulsion among the Cu-3$d$ electrons, could lead to the exotic transition under pressure. Our work provides an explanation of the high-pressure behaviors of Bi2212, which may facilitate a comprehensive understanding of cuprate superconductors.
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Submitted 9 July, 2025;
originally announced July 2025.
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Emergent Multiferroic Altermagnets and Spin Control via Noncollinear Molecular Polarization
Authors:
Ziye Zhu,
Yuntian Liu,
Xunkai Duan,
Jiayong Zhang,
Bowen Hao,
Su-Huai Wei,
Igor Zutic,
Tong Zhou
Abstract:
Altermagnets, with spin splitting and vanishing magnetization, have been attributed to many fascinating phenomena and potential applications. In particular, integrating ferroelectricity with altermagnetism to enable magnetoelectric coupling and electric control of spin has drawn significant attention. However, its experimental realization and precise spin manipulation remain elusive. Here, by focu…
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Altermagnets, with spin splitting and vanishing magnetization, have been attributed to many fascinating phenomena and potential applications. In particular, integrating ferroelectricity with altermagnetism to enable magnetoelectric coupling and electric control of spin has drawn significant attention. However, its experimental realization and precise spin manipulation remain elusive. Here, by focusing on molecular ferroelectrics, the first discovered ferroelectrics renowned for their highly controllable molecular polarizations and structural flexibility, we reveal that these obstacles can be removed by an emergent multiferroic altermagnets with tunable spin polarization in a large class of fabricated organic materials. Using a symmetry-based design and a tight-binding model, we uncover the underlying mechanism of such molecular ferroelectric altermagnets and demonstrate how noncollinear molecular polarization can switch the spin polarization on and off and even reverse its sign. From the first-principles calculations, we verify the feasibility of these materials in a series of well-established hybrid organic-inorganic perovskites and metal-organic frameworks. Our findings bridge molecular ferroelectrics and altermagnetic spintronics, highlighting an unexplored potential of multifunctional organic multiferroics.
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Submitted 9 July, 2025;
originally announced July 2025.
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Ultrafast and reliable domain-wall and skyrmion logic in a chirally coupled ferrimagnet
Authors:
Yifei Ma,
Dihua Wu,
Fengbo Yan,
Xiaoxiao Fang,
Peixin Qin,
Leran Wang,
Li Liu,
Laichuan Shen,
Zhiqi Liu,
Wenyun Yang,
Jie Zhang,
Yan Zhou,
Feng Luo,
Jinbo Yang,
Hyunsoo Yang,
Kaiming Cai,
Shuai Ning,
Zhaochu Luo
Abstract:
Unlocking the spin degree of freedom in addition to the electron's charge, spin-based logic offers an in-memory computing architecture beyond-CMOS technology. Here, we encode information into chiral spin textures (e.g., chiral domain-wall and skyrmion) and achieve an ultrafast and reliable all-electrical logic by exploiting the Dzyaloshinskii-Moriya interaction-induced chiral coupling. Taking adva…
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Unlocking the spin degree of freedom in addition to the electron's charge, spin-based logic offers an in-memory computing architecture beyond-CMOS technology. Here, we encode information into chiral spin textures (e.g., chiral domain-wall and skyrmion) and achieve an ultrafast and reliable all-electrical logic by exploiting the Dzyaloshinskii-Moriya interaction-induced chiral coupling. Taking advantage of fast spin dynamics in antiferromagnetically coupled systems, we achieved a fast domain-wall motion passing through the logic gate, exceeding 1 kilometre per second, yielding an operation time of 50 picoseconds for a 50 nanometres-long logic gate. Furthermore, we present a fast logic operation with skyrmion bubbles in a racetrack that exhibits a topologically protected computation scheme. Our work demonstrates a viable approach for advanced microchips with high operation frequency and ultralow power consumption, paving the way for next-generation computing technologies.
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Submitted 9 July, 2025;
originally announced July 2025.
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Topological defects govern plasticity and shear band formation in two-dimensional amorphous solids
Authors:
Xin Wang,
Jin Shang,
Yujie Wang,
Jie Zhang,
Matteo Baggioli
Abstract:
Understanding the fundamental mechanisms behind plastic instabilities and shear band formation in amorphous media under applied deformation remains a long-standing challenge. Leveraging on the mathematical concept of topology, we revisit this problem using two-dimensional experimental amorphous granular packings subjected to pure shear. We demonstrate that topological defects (TDs) in the displace…
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Understanding the fundamental mechanisms behind plastic instabilities and shear band formation in amorphous media under applied deformation remains a long-standing challenge. Leveraging on the mathematical concept of topology, we revisit this problem using two-dimensional experimental amorphous granular packings subjected to pure shear. We demonstrate that topological defects (TDs) in the displacement vector field act as carriers of plasticity, enabling the prediction of both the onset of plastic flow and the global mechanical response of the system. At the microscopic level, we show that these TDs are responsible for the dynamical breakdown of local orientational order, thereby linking topological excitations to short-range structural changes. Finally, we establish that the spatial localization and cooperative alignment of TDs underlie the formation of macroscopic shear bands, which drive plastic flow under large shear loads. This process is mediated by the quasi-periodic annihilation of large defect clusters and their geometric transformation from an approximately isotropic to a strongly anisotropic shape. Our results provide a unified framework for understanding plastic deformation and shear band formation in two-dimensional amorphous systems by connecting topology, short-range order, and mechanical response.
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Submitted 4 July, 2025;
originally announced July 2025.
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Two-Dimensional Superconductivity at the CaZrO3/KTaO3 (001) Heterointerfaces
Authors:
Lu Chen,
Siyi Zhou,
Daming Tian,
Yinan Xiao,
Qixuan Gao,
Yongchao Wang,
Yuansha Chen,
Fengxia Hu,
Baogen Shen,
Jirong Sun,
Weisheng Zhao,
Jinsong Zhang,
Hui Zhang
Abstract:
We investigated the superconducting transport properties of two-dimensional electron gases (2DEGs) at (001)-oriented CaZrO3/KTaO3 (CZO/KTO) heterointerfaces. Our results unambiguously demonstrate the emergence of two-dimensional superconductivity, with a superconducting transition TC up to ~0.25 K. The two-dimensional nature of the superconducting state is corroborated by the Berezinskii-Kosterlit…
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We investigated the superconducting transport properties of two-dimensional electron gases (2DEGs) at (001)-oriented CaZrO3/KTaO3 (CZO/KTO) heterointerfaces. Our results unambiguously demonstrate the emergence of two-dimensional superconductivity, with a superconducting transition TC up to ~0.25 K. The two-dimensional nature of the superconducting state is corroborated by the Berezinskii-Kosterlitz-Thouless (BKT) transition and pronounced anisotropy of the upper critical field. The estimated superconducting layer thickness and coherence length are 10.1 nm and 146.4 nm, respectively, for the sample with nS=7.7*10^13 cm^-2. Furthermore, we demonstrate that the two-dimensional superconductivity at the CZO/KTO(001) interface can be effectively tuned by applying a back gate voltage. These findings conclusively establish two-dimensional superconductivity at the CZO/KTO(001) interfaces, providing a new platform for exploring emergent superconductivity in complex oxide heterostructures.
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Submitted 2 July, 2025;
originally announced July 2025.
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High-mobility heavy quasiparticles in a van der Waals antiferromagnetic dense Kondo lattice CeTe$_3$
Authors:
Hai Zeng,
Yang Zhang,
Bingke Ji,
Jiaqiang Cai,
Shuo Zou,
Zhuo Wang,
Chao Dong,
Kangjian Luo,
Yang Yuan,
Kai Wang,
Jinglei Zhang,
Chuanyin Xi,
Junfeng Wang,
Yaomin Dai,
Jing Li,
Yongkang Luo
Abstract:
Two-dimensional van der Waals (vdW) materials exhibit high carrier mobility and tunability, making them suitable for low-power, high-performance electronic and spintronic applications. Incorporating narrow-band electronic correlation effects could further promote tunability, though mass renormalization may impact carrier mobility. It is therefore challenging to identify a vdW material with both hi…
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Two-dimensional van der Waals (vdW) materials exhibit high carrier mobility and tunability, making them suitable for low-power, high-performance electronic and spintronic applications. Incorporating narrow-band electronic correlation effects could further promote tunability, though mass renormalization may impact carrier mobility. It is therefore challenging to identify a vdW material with both high mobility and strong correlation. Herein, by a combination of optical spectroscopy and high-field quantum-oscillation measurements, we observe significant effective-mass enhancement in CeTe$_3$ at low temperature, arising from not only the band-structure modulation by antiferromagnetic ordering but also the narrow-band correlation effect. Despite the mass enhancement, the quantum mobility surprisingly \textit{increases} and reaches $\sim$2403 cm$^2$/Vs, likely benefiting from topological protection. Remarkably, these unique properties are maintained in atomically thin nanoflakes with quantum mobility enhanced to $\sim$3158 cm$^2$/Vs. Thus, CeTe$_3$ emerges as a promising vdW antiferromagnetic metal with high-mobility heavy quasiparticles, potentially unlocking new device concepts.
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Submitted 30 June, 2025;
originally announced June 2025.
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Prediction of A15 Tilt Grain Boundary Structures
Authors:
Wenwen Zou,
Zihan Su,
Juan Zhang,
Kai Jiang
Abstract:
In this work, we present a theoretical method to predict all coincidence site lattice (CSL) tilt grain boundaries (GBs) in A15, especially high-$Σ$ CSL GBs. This method includes a modified Farey diagram (MFD) and a computational framework based on the 3D phase field crystal model. Applied to [001] CSL symmetric tilt grain boundaries (STGBs) in A15, this method identifies building blocks of A15 GBs…
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In this work, we present a theoretical method to predict all coincidence site lattice (CSL) tilt grain boundaries (GBs) in A15, especially high-$Σ$ CSL GBs. This method includes a modified Farey diagram (MFD) and a computational framework based on the 3D phase field crystal model. Applied to [001] CSL symmetric tilt grain boundaries (STGBs) in A15, this method identifies building blocks of A15 GBs, known as structural units (SUs). The MFD predicts the quantity and proportion of SUs within GBs. The developed computational approach further determines the arrangement of these SUs. The predictive rule reveals the SU arrangement of A15 [001] CSL STGBs.
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Submitted 27 June, 2025;
originally announced June 2025.
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Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
Authors:
Jian-Huan Wang,
Ming Ming,
Ding-Ming Huang,
Jie-Yin Zhang,
Yi Luo,
Bin-Xiao Fu,
Yi-Xin Chu,
Yuan Yao,
Hongqi Xu,
Jian-Jun Zhang
Abstract:
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we report an original low-temperature epitaxial method for growth of site-controlled in-plane germanium nanowires with high hole mobility by molecular beam epitaxy…
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Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we report an original low-temperature epitaxial method for growth of site-controlled in-plane germanium nanowires with high hole mobility by molecular beam epitaxy. By reducing the growth temperature, we effectively suppress Si-Ge interdiffusion, ensuring pure germanium composition within the nanowires while preserving their high crystalline quality. The method employs pre-patterned ridges on strain-relaxed Si$_{0.75}$Ge$_{0.25}$/Si(001) substrates as tailored templates, enabling control over the position, length, spacing and cross-sectional shape of the nanowires. Electrical measurements of field-effect devices made from as-grown germanium nanowires show that the nanowires are of hole conduction with mobility exceeding 7000 cm$^{2}$/Vs at 2-20 K. The method paves a way for fabrication of scalable germanium nanowire networks, providing a reliable platform for the developments of high-performance nanoelectronics and multi-qubit chips.
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Submitted 25 June, 2025;
originally announced June 2025.
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Interplay of magnetic ordering and charge transport in a distorted ScAl$_3$C$_3$-type GdZn$_3$As$_3$
Authors:
Zhiyu Zhou,
Xiyu Chen,
Jia-Yi Lu,
Junchao Zhang,
Xiong Luo,
Guang-Han Cao,
Shuai Dong,
Zhi-Cheng Wang
Abstract:
We present the synthesis and characterization of GdZn$_3$As$_3$, a previously unreported variant of the $RM_3X_3$ family ($R$ = lanthanides; $M$ = Zn, Cd; $X$ = P, As), prepared in both single-crystal and polycrystalline forms. Unlike other $RM_3X_3$ compounds that crystallize in undistorted hexagonal structures, GdZn$_3$As$_3$ adopts a distorted ScAl$_3$C$_3$-type orthorhombic structure with…
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We present the synthesis and characterization of GdZn$_3$As$_3$, a previously unreported variant of the $RM_3X_3$ family ($R$ = lanthanides; $M$ = Zn, Cd; $X$ = P, As), prepared in both single-crystal and polycrystalline forms. Unlike other $RM_3X_3$ compounds that crystallize in undistorted hexagonal structures, GdZn$_3$As$_3$ adopts a distorted ScAl$_3$C$_3$-type orthorhombic structure with $Cmcm$ space group. Magnetic measurements demonstrate that GdZn$_3$As$_3$ undergoes a ferromagnetic transition at the Curie temperature ($T_{\mathrm{C}}$) of 6.3~K, which is unique among known $RM_3X_3$ materials. This magnetic transition is further confirmed by specific heat and electrical resistivity measurements. GdZn$_3$As$_3$ displays metallic behavior with a pronounced resistivity peak near $T_{\mathrm{C}}$, which is strongly suppressed by magnetic fields, leading to significant negative magnetoresistance. Hall effect measurements reveal a low carrier density and a clear nonlinear anomalous Hall effect in GdZn$_3$As$_3$. Furthermore, both specific heat and resistivity data suggest the presence of additional magnetic transition(s) below $T_{\mathrm{C}}$, requiring further investigation. These results demonstrate that GdZn$_3$As$_3$ possesses distinct structural, magnetic, and electronic transport properties within the $RM_3X_3$ family, establishing it as an exceptional platform for investigating competing magnetic interactions in low-carrier-density rare-earth triangular-lattice systems.
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Submitted 25 June, 2025;
originally announced June 2025.
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Staggered nonlinear spin generations in centrosymmetric altermagnets under electric current
Authors:
Jie Zhang,
Ruijing Fang,
Zhichao Zhou,
Xiao Li
Abstract:
Current-induced spin generations are of significant importance for electrically controllable magnetization. Due to symmetry constraints, linear spin generation is absent in centrosymmetric magnets and nonlinear contributions become crucial. However, nonlinear spin generations have few examples in centrosymmetric compensated magnets with opposite-spin sublattices, which hinders electric control of…
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Current-induced spin generations are of significant importance for electrically controllable magnetization. Due to symmetry constraints, linear spin generation is absent in centrosymmetric magnets and nonlinear contributions become crucial. However, nonlinear spin generations have few examples in centrosymmetric compensated magnets with opposite-spin sublattices, which hinders electric control of associated magnetization. Here, we study nonlinear spin generations in altermagnets with opposite-spin sublattices. In a square altermagnetic model, both staggered and uniform nonlinear spin generations appear at opposite-spin sublattices. They vary as the magnetization direction rotates, with emerging out-of-plane components that can be utilized in perpendicular magnetization switching of high-density storage devices. By first-principles calculations, out-of-plane, staggered nonlinear spin generations are found to be considerable in a typical altermagnet, Fe$_2$Se$_2$O monolayer. Our findings provide opportunities for electrically manipulating magnetization and designing energy-efficient magnetic devices based on compensated magnets.
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Submitted 25 June, 2025;
originally announced June 2025.
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Jamming as a topological satisfiability transition with contact number hyperuniformity and criticality
Authors:
Jin Shang,
Yinqiao Wang,
Deng Pan,
Yuliang Jin,
Jie Zhang
Abstract:
The jamming transition between flow and amorphous-solid states exhibits paradoxical properties characterized by hyperuniformity (suppressed spatial fluctuations) and criticality (hyperfluctuations), whose origin remains unclear. Here we model the jamming transition by a topological satisfiability transition in a minimum network model with simultaneously hyperuniform distributions of contacts, dive…
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The jamming transition between flow and amorphous-solid states exhibits paradoxical properties characterized by hyperuniformity (suppressed spatial fluctuations) and criticality (hyperfluctuations), whose origin remains unclear. Here we model the jamming transition by a topological satisfiability transition in a minimum network model with simultaneously hyperuniform distributions of contacts, diverging length scales and scale-free clusters. We show that these phenomena stem from isostaticity and mechanical stability: the former imposes a global equality, and the latter local inequalities on arbitrary sub-systems. This dual constraint bounds contact number fluctuations from both above and below, limiting them to scale with the surface area. The hyperuniform and critical exponents of the network model align with those of frictionless jamming, suggesting a new universality class of non-equilibrium phase transitions. Our results provide a minimal, dynamics-independent framework for jamming criticality and hyperuniformity in disordered systems.
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Submitted 19 June, 2025;
originally announced June 2025.
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Ultrafast dynamics of three-dimensional Kane plasmons in the narrow-bandgap Hg$_{0.8}$Cd$_{0.2}$Te
Authors:
Xiaoyue Zhou,
Yi Chan,
Siyuan Zhu,
Fu Deng,
Wei Bai,
Jingdi Zhang
Abstract:
We report on an ultrafast terahertz spectroscopic study on the dynamics of free carriers and the pertinent bulk plasmons in Hg$_{0.8}$Cd$_{0.2}$Te (MCT) film, a narrowband semiconductor accommodating three dimensional massless Kane fermions. The ultrabroadband terahertz source enables the investigation of the lightly doped equilibrium state in the presence of plasmon-phonon hybridization through t…
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We report on an ultrafast terahertz spectroscopic study on the dynamics of free carriers and the pertinent bulk plasmons in Hg$_{0.8}$Cd$_{0.2}$Te (MCT) film, a narrowband semiconductor accommodating three dimensional massless Kane fermions. The ultrabroadband terahertz source enables the investigation of the lightly doped equilibrium state in the presence of plasmon-phonon hybridization through the heavily doped excited state, primarily dominated by plasmons. Without the recourse to the resource consuming cryogenic high magnetic field spectroscopy that hinges on observable related to the interband transition, we show that the massless band dispersion can instead be conveniently perceived by the room temperature study of the intraband transition through the determination of the plasmon carrier density relationship. We found the plasma frequency in MCT scales with the cube root of carrier density, in contrast with the square root scaling in the conventional massive fermion system of parabolic band dispersion. This work also answers the curious question of whether the MCT can maintain its massless Kane fermion character in case the strict gapless condition is deviated from. The method presented herein provides a convenient approach to identifying the landscape of both massless and massive band dispersion.
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Submitted 19 June, 2025;
originally announced June 2025.
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$La_3Pd_2NaO_9$: A High-Valent Insulating Palladate
Authors:
Qingqing Yang,
Ning Guo,
Tieyan Chang,
Zheng Guo,
Xiaoli Wang,
Chuanyan Fan,
Chao Liu,
Lu Han,
Feiyu Li,
Tao He,
Qiang Zheng,
Yu-Sheng Chen,
Junjie Zhang
Abstract:
A high-valent palladate, $La_3Pd_2NaO_9$, has been synthesized for the first time. Single crystals with dimensions of 20 $μ$m on edge were successfully grown using the flux method at 420 $^o$C and 70 bar oxygen pressure. Energy dispersive spectroscopy (EDS) and inductively coupled plasma mass spectroscopy (ICP) measurements show that the atomic ratio of La: (Pd+Na) is 3: 3 and Pd: Na is 2: 1. X-ra…
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A high-valent palladate, $La_3Pd_2NaO_9$, has been synthesized for the first time. Single crystals with dimensions of 20 $μ$m on edge were successfully grown using the flux method at 420 $^o$C and 70 bar oxygen pressure. Energy dispersive spectroscopy (EDS) and inductively coupled plasma mass spectroscopy (ICP) measurements show that the atomic ratio of La: (Pd+Na) is 3: 3 and Pd: Na is 2: 1. X-ray photoelectron spectroscopy (XPS) measurements show that the oxidation state of Pd is dominated by +4. Synchrotron X-ray single-crystal diffraction measurements revealed that this material crystallizes in the monoclinic $P2_1/c$ space group with charge ordering of Na and Pd. Real-space imaging via scanning transmission electron microscopy (STEM) confirmed the crystal structure and revealed excellent sample homogeneity. Electrical resistivity measurements show an insulating behavior. Magnetic measurements show an unexpected paramagnetic behavior, which probably originate from a small fraction of high-spin Pd$^{2+}$ evidenced by XPS. The successful growth of $La_3Pd_2NaO_9$ single crystals with a high-valent oxidation state of Pd offers an approach for exploring interesting palladates, including potential bilayer Ruddlesden-Popper palladates analogous to the high temperature superconducting $La_3Ni_2O_7$.
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Submitted 18 June, 2025;
originally announced June 2025.
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Anisotropic Josephson coupling of d-vectors arising from interplay with frustrated spin textures
Authors:
Grayson R. Frazier,
Junyi Zhang,
Yi Li
Abstract:
We propose a Cooper pair analogue of Dzyaloshinskii-Moriya's anisotropic coupling for $d$-vectors in an inhomogeneous unconventional superconductor, which can arise when itinerant electrons couple to a local exchange field of frustrated spin moments. Using perturbative Green's function methods, we examine an $s$-$d$ model on a geometrically frustrated lattice with noncollinear spin texture that br…
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We propose a Cooper pair analogue of Dzyaloshinskii-Moriya's anisotropic coupling for $d$-vectors in an inhomogeneous unconventional superconductor, which can arise when itinerant electrons couple to a local exchange field of frustrated spin moments. Using perturbative Green's function methods, we examine an $s$-$d$ model on a geometrically frustrated lattice with noncollinear spin texture that breaks time-reversal and parity symmetries, leading to spin-triplet pairing correlations. The effective Josephson tunneling in the presence of such an exchange field leads to an anisotropic Josephson coupling between $d$-vectors, which prefers a spatially inhomogeneous pairing order. Furthermore, we discuss anomalous vortices arising from the spatially inhomogeneous $d$-vector in the absence of a magnetic field for nonunitary triplet pairing order. We also propose a Josephson diode effect in which the diode efficiency is proportional to the spin chirality of the local exchange field. Our results can help understand the experiments in superconducting proximitized Mn$_3$Ge and in 4Hb-TaS$_2$.
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Submitted 18 June, 2025;
originally announced June 2025.
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Effect of Rashba spin-orbit coupling on topological phases in monolayer ZnIn2Te4
Authors:
Jun-Jie Zhang,
Shuai Dong
Abstract:
The interplay of Rashba and quantum spin Hall effects in non-centrosymmetric systems presents both challenges and opportunities for spintronic applications. While Rashba spin-orbit coupling can disrupt the quantum spin Hall phase, their coexistence may enable additional spintronic functionalities by coupling spin-momentum locking in the bulk with topologically protected edge states. Using the ZnIn…
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The interplay of Rashba and quantum spin Hall effects in non-centrosymmetric systems presents both challenges and opportunities for spintronic applications. While Rashba spin-orbit coupling can disrupt the quantum spin Hall phase, their coexistence may enable additional spintronic functionalities by coupling spin-momentum locking in the bulk with topologically protected edge states. Using the ZnIn$_2$Te$_4$ monolayer as a case study-a predicted polar two-dimensional topological insulator-we investigate how intrinsic and Rashba spin-orbit coupling compete within a single material. Our results identify key conditions under which sizable Rashba spin splitting can coexist with a stable quantum spin Hall phase, offering guidance for engineering quantum spin Hall insulators with enhanced spintronic capabilities.
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Submitted 18 June, 2025;
originally announced June 2025.
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Electronic Correlations Control Interlayer Coupling and Magnetic Transition in MnBi$_2$Te$_4$/MnBr$_3$ Heterostructure
Authors:
Yuanhao Zhu,
Xixi Yuan,
Ying Zhao,
Jin Zhang,
Zijing Ding,
Huixia Fu
Abstract:
Bulk MnBi$_2$Te$_4$ (MBT) is an intrinsic antiferromagnetic topological insulator. However, its low Néel temperature of $\sim 25\,\mathrm{K}$ severely restricts its practical applications. Here, we propose a van der Waals heterostructure composed of monolayer MBT (ML-MBT) and monolayer MnBr$_3$, an intrinsic Chern insulator possessing a high Curie temperature ($T_\mathrm{C} \sim 200\,\mathrm{K}$).…
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Bulk MnBi$_2$Te$_4$ (MBT) is an intrinsic antiferromagnetic topological insulator. However, its low Néel temperature of $\sim 25\,\mathrm{K}$ severely restricts its practical applications. Here, we propose a van der Waals heterostructure composed of monolayer MBT (ML-MBT) and monolayer MnBr$_3$, an intrinsic Chern insulator possessing a high Curie temperature ($T_\mathrm{C} \sim 200\,\mathrm{K}$). By employing density functional theory calculations and Monte Carlo simulations, we demonstrate that interfacing ML-MBT with MnBr$_3$ significantly enhances the $T_\mathrm{C}$ of ML-MBT by a factor of four to five. Electronic correlations characterized by the Hubbard parameter $U_2$ for Mn-$d$ orbitals in MnBr$_3$ play a crucial role in governing magnetic coupling within the system. At a moderate correlation strength of $U_2 = 3.0\,\mathrm{eV}$, slight structural distortions in MnBr$_3$ break intralayer symmetry, enabling robust interlayer ferromagnetic coupling and yielding a single, unified magnetic transition. Increasing $U_2$ reduces these structural distortions, weakens interlayer coupling, and induces two distinct magnetic transitions, indicating interlayer magnetic decoupling. Thus, the MBT/MnBr$_3$ heterostructure offers a novel approach for controlling magnetic order and enhancing the performance of spintronic devices.
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Submitted 16 June, 2025;
originally announced June 2025.
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Resonant dynamics of dipole-conserving Bose-Hubbard model with time-dependent tensor electric fields
Authors:
Jiali Zhang,
Shaoliang Zhang
Abstract:
Recently, tensor gauge fields and their coupling to fracton phases of matter have attracted more and more research interest, and a series of novel quantum phenomena arising from the coupling has been predicted. In this article, we propose a theoretical scheme to construct a time-dependent rank-2 tensor electric field by introducing a periodically driving quadratic potential in a dipole-conserving…
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Recently, tensor gauge fields and their coupling to fracton phases of matter have attracted more and more research interest, and a series of novel quantum phenomena arising from the coupling has been predicted. In this article, we propose a theoretical scheme to construct a time-dependent rank-2 tensor electric field by introducing a periodically driving quadratic potential in a dipole-conserving Bose-Hubbard model, and investigate the dynamics of dipole and fracton excitations when the drive frequency is resonant with the on-site interaction. We find that the dynamics are dominated by the splitting of large dipoles with the photon-assisted correlated tunneling and the movement of small dipoles, both of which can be well controlled by the drive amplitude. Our work provides a possible approach for engineering the dynamics of dipole-conserving quantum systems via tensor gauge fields.
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Submitted 16 June, 2025;
originally announced June 2025.
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Electric Field Control of Spin Orbit Coupling and Circular Photogalvanic Effect in a True Ferrielectric Crystal
Authors:
Yunlin Lei,
Xinyu Yang,
Shouyu Wang,
Daliang Zhang,
Zitao Wang,
Jiayou Zhang,
Yihao Yang,
Chuanshou Wang,
Tianqi Xiao,
Yinxin Bai,
Junjiang Tian,
Congcong Chen,
Yu Han,
Shuai Dong,
Junling Wang
Abstract:
Materials possessing long range ordering of magnetic spins or electric dipoles have been the focus of condensed matter research. Among them, ferri-systems with two sublattices of unequal/noncollinear spins or electric dipoles are expected to combine the properties of ferro- and antiferro-systems, but lack experimental observations in single phase materials. This is particularly true for the ferrie…
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Materials possessing long range ordering of magnetic spins or electric dipoles have been the focus of condensed matter research. Among them, ferri-systems with two sublattices of unequal/noncollinear spins or electric dipoles are expected to combine the properties of ferro- and antiferro-systems, but lack experimental observations in single phase materials. This is particularly true for the ferrielectric system, since the electric dipoles usually can be redefined to incorporate the two sublattices into one, making it indistinguishable from ferroelectric. This raises doubts about whether or not ferrielectricity can be considered as an independent ferroic order. Here we report the observation of true ferrielectric behaviors in a hybrid single crystal (MV)[SbBr5] (MV2+ = N,N'-dimethyl-4,4'-bipyridinium or methylviologen), where the two electric dipole sublattices switch asynchronously, thus cannot be reduced to ferroelectric by redefining the unit cell. Furthermore, the complex dipole configuration imparts circularly polarized light sensitivity to the system. An electric field can modulate the non-collinear dipole sublattices and even induce a transition from ferrielectric to ferroelectric state, thereby tuning the helicity-dependent photocurrent. This study opens a new paradigm for the study of true irreducible ferrielectricity (a new class of polar system) and provides an effective approach to the electric field control of spin-orbit coupling and circular photogalvanic effect.
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Submitted 15 June, 2025;
originally announced June 2025.
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Topologically nontrivial and trivial flat bands via weak and strong interlayer coupling in twisted bilayer honeycomb optical lattices for ultracold atoms
Authors:
Wenjie Sui,
Wei Han,
Zheng Vitto Han,
Zengming Meng,
Jing Zhang
Abstract:
In recent years, flat electronic bands in twisted bilayer graphene (TBG) have attracted significant attention due to their intriguing topological properties, extremely slow electron velocities, and enhanced density of states. Extending twisted bilayer systems to new configurations is highly desirable, as it offers promising opportunities to explore flat bands beyond TBG. Here, we study both topolo…
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In recent years, flat electronic bands in twisted bilayer graphene (TBG) have attracted significant attention due to their intriguing topological properties, extremely slow electron velocities, and enhanced density of states. Extending twisted bilayer systems to new configurations is highly desirable, as it offers promising opportunities to explore flat bands beyond TBG. Here, we study both topological and trivial flat bands in a twisted bilayer honeycomb lattice for ultracold atoms and present the evolution of the flat bands with different interlayer coupling strength (ICS). Our results demonstrate that an isolated topological flat band can emerge at the Dirac point energy for a specific value of weak ICS, referred to as the ``critical coupling". This occurs over a wide range of twist angles, surpassing the limits of the magic angle in TBG systems. When the ICS is slightly increased beyond the critical coupling value, the topological flat band exhibits degenerate band crossings with both the upper and lower adjacent bands at the high-symmetry $Γ_s$ point. As the ICS is further increased into the strong coupling regime, trivial flat bands arise around Dirac point energy. Meanwhile, more trivial flat bands appear, extending from the lowest to higher energy bands, and remain flat as the ICS increases. The topological properties of the flat bands are studied through the winding pattern of the Wilson loop spectrum. Our research provides deeper insights into the formation of flat bands in ultracold atoms with highly controllable twisted bilayer optical lattices, and may contribute to the discovery of new strongly correlated states of matter.
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Submitted 13 June, 2025;
originally announced June 2025.
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Identifying vortex lattice in type-II superconductors via the dynamic magnetostrictive effect
Authors:
Peipei Lu,
Mengju Yuan,
Jing Zhang,
Qiang Gao,
Shuang Liu,
Yugang Zhang,
Shipeng Shen,
Long Zhang,
Jun Lu,
Xiaoyuan Zhou,
Mingquan He,
Aifeng Wang,
Yang Li,
Wenshan Hong,
Shiliang Li,
Huiqian Luo,
Xingjiang Zhou,
Xianhui Chen,
Young Sun,
Yisheng Chai
Abstract:
In type-I superconductors, zero electrical resistivity and perfect diamagnetism define two fundamental criteria for superconducting behavior. In contrast, type-II superconductors exhibit more complex mixed-state physics, where magnetic flux penetrates the material above the lower critical field Hc1 in the form of quantized vortices, each carrying a single flux quantum. These vortices form a two-di…
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In type-I superconductors, zero electrical resistivity and perfect diamagnetism define two fundamental criteria for superconducting behavior. In contrast, type-II superconductors exhibit more complex mixed-state physics, where magnetic flux penetrates the material above the lower critical field Hc1 in the form of quantized vortices, each carrying a single flux quantum. These vortices form a two-dimensional lattice which persists up to another irreversible field (Hirr) and then melts into a dissipative liquid phase. The vortex lattice is fundamental to the magnetic and electrical properties of type-II superconductors, a third definitive criterion-beyond resistivity and magnetization-for identifying this phase has remained elusive. Here, we report the discovery of a dynamic magnetostrictive effect, wherein the geometry of the superconductor oscillates only under an applied alternating magnetic field due to the disturbance of the vortex lattice. This effect is detected by a thin piezoelectric transducer, which converts the excited geometric deformation into an in-phase ac voltage. Notably, we find a direct and nearly linear relationship between the signal amplitude and the vortex density in lattice across several representative type-II superconductors. In the vortex liquid phase above Hirr, the signal amplitude rapidly decays to zero near the upper critical field (Hc2), accompanied by a pronounced out-of-phase component due to enhanced dissipation. This dynamic magnetostrictive effect not only reveals an unexplored magnetoelastic property of the vortex lattice but also establishes a fundamental criterion for identifying the type-II superconductors.
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Submitted 10 June, 2025;
originally announced June 2025.
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Ferromagnetic Two-dimensional Electron Gases with Magnetic Doping and Proximity Effects
Authors:
Zixin Fan,
Jiale Chen,
Qiangtao Sui,
Haoming Ling,
Zihao Wang,
Lingyuan Kong,
Dingyi Li,
Fang Yang,
Run Zhao,
Hanghui Chen,
Pan Chen,
Yan Liang,
Jiandi Zhang
Abstract:
The advent of magnetic two-dimensional electron gases (2DEGs) at oxide interfaces has provided new opportunities in the field of spintronics. The enhancement of magnetism in 2DEGs at oxide interfaces continues to be a significant challenge, as exemplified by the relatively weak magnetism observed in the classical LaAlO3/SrTiO3 interface. Here, we present ferromagnetic (FM) 2DEGs at the interface f…
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The advent of magnetic two-dimensional electron gases (2DEGs) at oxide interfaces has provided new opportunities in the field of spintronics. The enhancement of magnetism in 2DEGs at oxide interfaces continues to be a significant challenge, as exemplified by the relatively weak magnetism observed in the classical LaAlO3/SrTiO3 interface. Here, we present ferromagnetic (FM) 2DEGs at the interface fabricated between the FM insulator EuTiO3 (ETO) and the strong spin-orbit coupled (SOC) perovskite insulator KTaO3 (KTO). With the combined effects of magnetic atom doping and magnetic proximity from ETO films, the coercive field of 2DEGs can be significantly enhanced. Magnetoresistance (MR) curve with a high coercive field of 1000 Oe has been observed, in conjunction with a temperature-dependent unambiguous hysteresis loop in the anomalous Hall effect (AHE). Furthermore, within the 2DEGs, we have identified a synergetic interplay between magnetic scattering and the weak antilocalization (WAL) effect on transport. This study provides fresh insights into the formation of FM 2DEGs at ETO/KTO interfaces, and introduce an innovative pathway for creating high-performance magnetic 2DEGs at oxide interfaces.
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Submitted 10 June, 2025;
originally announced June 2025.
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Strongly enhanced topological quantum phases in dual-surface AlO$_x$-encapsulated MnBi$_2$Te$_4$
Authors:
Zichen Lian,
Yongqian Wang,
Yongchao Wang,
Liangcai Xu,
Jinsong Zhang,
Chang Liu,
Yayu Wang
Abstract:
The topological quantum phases in antiferromagnetic topological insulator MnBi$_2$Te$_4$ hold promise for next-generation spintronics, but their experimental realization has been constrained by challenges in preparing high-quality devices. In this work, we report a new wax-assisted exfoliation and transfer method that enables the fabrication of MnBi$_2$Te$_4$ heterostructures with both surfaces en…
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The topological quantum phases in antiferromagnetic topological insulator MnBi$_2$Te$_4$ hold promise for next-generation spintronics, but their experimental realization has been constrained by challenges in preparing high-quality devices. In this work, we report a new wax-assisted exfoliation and transfer method that enables the fabrication of MnBi$_2$Te$_4$ heterostructures with both surfaces encapsulated by AlO$_x$. This strategy strongly enhances the topological quantum phases in MnBi$_2$Te$_4$ flakes. We observe the robust axion insulator state in even-layer device with wide zero Hall plateau and high longitudinal resistivity, and the quantum anomalous Hall effect in odd-layer device with large hysteresis and sharp plateau transition. These results demonstrate that the combination of wax exfoliation and AlO$_x$ encapsulation provides great potentials for exploring novel topological quantum phenomena and potential applications in MnBi$_2$Te$_4$ and other two-dimensional materials.
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Submitted 5 June, 2025;
originally announced June 2025.
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Lattice and Orientational Defects Mediate Collective Transport of Confluent Cells
Authors:
Jiusi Zhang,
Chung Wing Chan,
Bo Li,
Rui Zhang
Abstract:
Confluent tissues are a type of foam-like biological active matter. There is a recent interest in using active nematic liquid crystal framework to understand confluent cells, where topological (orientational) defects are believed to play a crucial role. However, how to reconcile the physical picture of lattice defects in Voronoi polygons with that of orientational defects in the nematic field$-$pa…
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Confluent tissues are a type of foam-like biological active matter. There is a recent interest in using active nematic liquid crystal framework to understand confluent cells, where topological (orientational) defects are believed to play a crucial role. However, how to reconcile the physical picture of lattice defects in Voronoi polygons with that of orientational defects in the nematic field$-$particularly in the context of cellular transport$-$remains elusive. Here, we employ the Active Vertex model to investigate the physics of lattice and orientational defects in the dynamics of confluent cells. We find a spatio-orientational correlation between lattice defects and $+1/2$ defects, unveiling a correspondence between the two physical perspectives. Next, we simulate the behavior of a dragged cell within a hexagonal-lattice tissue. Our results reveal that while the drag coefficient is anisotropic, the threshold drag force to mobilize the cell is isotropic, indicating the presence of a caging energy barrier. We further analyze the defect pattern in the wake of the dragged cell or cells. Remarkably, we discover that dragging two neighboring cells along the least-drag direction can substantially minimize the destruction of the lattice structure during cell transport. We find that this is due to the cooperative and periodic self-healing of the lattice defects. Taken together, our work sheds new light on the topological structure of confluent cells during their collective motion, advancing our physical understanding of cellular transport in processes such as wound healing, cancer cell metastasis, and other physiological events.
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Submitted 4 June, 2025;
originally announced June 2025.
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Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers
Authors:
M. Tiberi,
A. Montanaro,
C. Wen,
J. Zhang,
O. Balci,
S. M. Shinde,
S. Sharma,
A. Meersha,
H. Shekhar,
J. E. Muench,
B. R. Conran,
K. B. K. Teo,
M. Ebert,
X. Yan,
Y. Tran,
M. Banakar,
C. Littlejohns,
G. T. Reed,
M. Romagnoli,
A. Ruocco,
V. Sorianello,
A. C. Ferrari
Abstract:
The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth an…
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The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth and 80Gbit/s data rate, in both O and C bands, using a fabrication tailored for wafer-scale integration. We measure a data rate$\sim$1.6 times larger than previously reported for graphene. We scale the modulator's active area down to 22$μ$m$^2$, achieving a dynamic power consumption$\sim$58fJ/bit, $\sim$3 times lower than previous graphene modulators and Mach-Zehnder modulators based on Si or lithium niobate. We show devices with$\sim$0.037dB/V$μ$m modulation efficiency,$\sim$16 times better than previous demonstrations based on graphene. This paves the way to wafer-scale production of graphene modulators on Si useful for Tbit/s optical transceivers and energy-efficient AI
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Submitted 3 June, 2025;
originally announced June 2025.
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Sliding Ferroelectrics Induced Hybrid-Order Topological Phase Transitions
Authors:
Ning-Jing Yang,
Jian-Min Zhang,
Xiao-Ping Li,
Zeying Zhang,
Zhi-Ming Yu,
Zhigao Huang,
Yugui Yao
Abstract:
We propose ferroelectric layer sliding as a new approach to realize and manipulate topological quantum states in two-dimensional (2D) bilayer magnetic van der Waals materials. We show that stacking monolayer ferromagnetic topological states into layer-spin-locked bilayer antiferromagnetic structures, and introducing sliding ferroelectricity leads to asynchronous topological evolution of different…
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We propose ferroelectric layer sliding as a new approach to realize and manipulate topological quantum states in two-dimensional (2D) bilayer magnetic van der Waals materials. We show that stacking monolayer ferromagnetic topological states into layer-spin-locked bilayer antiferromagnetic structures, and introducing sliding ferroelectricity leads to asynchronous topological evolution of different layers (spins) owing to existence of polarization potentials, thereby giving rise to rich layer-resolved topological phases. As a specific example, by means of a lattice model, we show that a bilayer magnetic 2D second order topological insulator (SOTI) reveals an unrecognized spin-hybrid-order topological insulator after undergoing ferroelectric sliding. Interestingly, in such phase, the spin-up (top layer) and spin-down (bottom layer) channels exhibit first-order and second-order topological properties, respectively. Moreover, other topological phases such as SOTI, quantum spin Hall insulator, quantum anomalous Hall insulator, and trivial insulator can also emerge through changes in the parameters of the system, and the relevant topological indices are also discussed. In terms of materials, based on first principles calculations, we predict material ScI2 can serve as an ideal platform to realize our proposal. Further, we predict that the anomalous Nernst effect of these several topological phases exhibits distinct differences, and therefore can be used as a signal for experimentally probing.
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Submitted 3 June, 2025; v1 submitted 2 June, 2025;
originally announced June 2025.
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New universality classes and BKT transition in the vortex lattice phases of Kagome Ice
Authors:
Wei Zhang,
Wanzhou Zhang,
Jie Zhang,
Chengxiang Ding,
Youjin Deng
Abstract:
Inspired by the experimental realization of direct Kagome spin ice [arXiv:2404.19377], the theoretical six-vertex model on the Kagome lattice is systematically simulated using the directed loop Monte Carlo method. Four distinct vortex lattice phases are identified: (i) Ferromagnetic leg states and vortex lattice order on both triangular and honeycomb faces, with a winding number $ k = 1 $. (ii) An…
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Inspired by the experimental realization of direct Kagome spin ice [arXiv:2404.19377], the theoretical six-vertex model on the Kagome lattice is systematically simulated using the directed loop Monte Carlo method. Four distinct vortex lattice phases are identified: (i) Ferromagnetic leg states and vortex lattice order on both triangular and honeycomb faces, with a winding number $ k = 1 $. (ii) Antiferromagnetic leg states and vortex lattice order on both types of faces, with $ k = -2 $ on the honeycomb faces and $ k = 1 $ on the triangular faces. (iii) Paramagnetic leg states and vortex lattice order on the triangular faces with $ k = 1 $. (iv) Paramagnetic leg states and vortex lattice order on the honeycomb faces with $ k = 1 $. As for ferromagnetic to different types of magnetic disorder phase, besides the Ising universality class with $ y_t = 1 $, a new critical exponent $ y_t = 1.317(6) $ has also been found. The transition between the third and fourth types of vortex lattice phases occurs with the new exponent $y_t=1.340(3)$. The third and fourth types of the vortex lattice phase to the vortex disorder phase are found to be of the Berezinskii-Kosterlitz-Thouless type. These findings contribute to the search for and understanding of ice on complex lattices.
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Submitted 31 May, 2025;
originally announced June 2025.
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Photostriction-tunable Polarization and Structural Dynamics in Interlayer Sliding Ferroelectrics
Authors:
Kun Yang,
Jianxin Yu,
Jia Zhang,
Sheng Meng,
Jin Zhang
Abstract:
Two-dimensional ferroelectrics with robust polarization offer promising opportunities for non-volatile memory, field-effect transistors, and optoelectronic devices. However, the impact of lattice deformation on polarization and photoinduced structural response remains poorly understood. Here, we employ first-principles calculations to demonstrate photodoping-induced lattice expansion in rhombohedr…
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Two-dimensional ferroelectrics with robust polarization offer promising opportunities for non-volatile memory, field-effect transistors, and optoelectronic devices. However, the impact of lattice deformation on polarization and photoinduced structural response remains poorly understood. Here, we employ first-principles calculations to demonstrate photodoping-induced lattice expansion in rhombohedrally stacked bilayer MoS2, revealing a strong coupling between photodoping carrier and lattice structure. We identify a pronounced photostrictive response in sliding ferroelectrics, wherein electron-hole excitation leads to substantial in-plane expansion, increased interlayer spacing, and enhanced ferroelectric polarization. This strain-induced modulation drives significant bandgap renormalization. The photostriction-tunable polarization and structural dynamics arise from the strong electromechanical coupling inherent to the non-centrosymmetric rhombohedral stacking. The findings provide critical insights into the nonthermal lattice expansion governing sliding ferroelectrics at atomic-scale timescales, while simultaneously laying the groundwork for next-generation electronic and memory technologies by leveraging lattice-tunable polarization switching.
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Submitted 29 May, 2025;
originally announced May 2025.
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The experimental determination of exchange mass terms in surface states on both terminations of MnBi4Te7
Authors:
Dezhi Song,
Fuyang Hang,
Gang Yao,
Jun Zhang,
Ye-Ping Jiang,
Jin-Feng Jia
Abstract:
The intrinsic antiferromagnetic topological insulators in the Mn-Bi-Te family, composed of superlattice-like MnBi2Te4/(Bi2Te3)n (n = 0, 1, 2, 3...) layered structure, present intriguing states of matter such as quantum anomalous Hall effect and the axion insulator. However, the surface state gap, which is the prerequisite for the observation of these states, remains elusive. Here by molecular beam…
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The intrinsic antiferromagnetic topological insulators in the Mn-Bi-Te family, composed of superlattice-like MnBi2Te4/(Bi2Te3)n (n = 0, 1, 2, 3...) layered structure, present intriguing states of matter such as quantum anomalous Hall effect and the axion insulator. However, the surface state gap, which is the prerequisite for the observation of these states, remains elusive. Here by molecular beam epitaxy, we obtain two types of MnBi4Te7 films with the exclusive Bi2Te3 (BT) or MnBi2Te4 (MBT) terminations. By scanning tunneling spectroscopy, the mass terms in the surface states are identified on both surface terminations. Experimental results reveal the existence of a hybridization gap of approximately 23 meV in surface states on the BT termination. This gap comes from the hybridization between the surface states and the spin-split states in the adjacent MBT layer. On the MBT termination, an exchange mass term of about 30 meV in surface states is identified by taking magnetic-field-dependent Landau level spectra as well as theoretical simulations. In addition, the mass term varies with the field in the film with a heavy BiMn doping level in the Mn layers. These findings demonstrate the existence of mass terms in surface states on both types of terminations in our epitaxial MnBi4Te7 films investigated by local probes.
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Submitted 28 May, 2025;
originally announced May 2025.
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Photon emission gain in Er doped Si light emitting diodes by impact excitation
Authors:
Huayou Liu,
Jiayuan Zhao,
Jing Zhang,
Huan Liu,
Jiajing He,
Ulrich Kentsch,
Shengqiang Zhou,
Manfred Helm,
Yaping Dan
Abstract:
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer from low efficiency due to mismatched energy transfer between exciton recombination and Er excitation. Here, we propose a reverse-biased Si PN junction diode whe…
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This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer from low efficiency due to mismatched energy transfer between exciton recombination and Er excitation. Here, we propose a reverse-biased Si PN junction diode where ballistically accelerated electrons induce inelastic collisions with Er ions, enabling tunable excitation via electric field modulation. Theoretical modeling reveals that photon emission gain arises from multiple impact excitations by a single electron traversing the electroluminescence region, with the gain value approximating the ratio of emission region width to electron mean free path, i.e., G = Lex/l. Experimental results show an internal quantum efficiency (IQE) of 1.84% at 78 K, representing a 20-fold enhancement over room-temperature performance. This work provides a critical foundation for on-chip integration of silicon-based communication-band lasers and quantum light sources.
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Submitted 23 May, 2025;
originally announced May 2025.
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Cavity-Altered Superconductivity
Authors:
Itai Keren,
Tatiana A. Webb,
Shuai Zhang,
Jikai Xu,
Dihao Sun,
Brian S. Y. Kim,
Dongbin Shin,
Songtian S. Zhang,
Junhe Zhang,
Giancarlo Pereira,
Juntao Yao,
Takuya Okugawa,
Marios H. Michael,
James H. Edgar,
Stuart Wolf,
Matthew Julian,
Rohit P. Prasankumar,
Kazuya Miyagawa,
Kazushi Kanoda,
Genda Gu,
Matthew Cothrine,
David Mandrus,
Michele Buzzi,
Andrea Cavalleri,
Cory R. Dean
, et al. (7 additional authors not shown)
Abstract:
Is it feasible to alter the ground state properties of a material by engineering its electromagnetic environment? Inspired by theoretical predictions, experimental realizations of such cavity-controlled properties without optical excitation are beginning to emerge. Here, we devised and implemented a novel platform to realize cavity-altered materials. Single crystals of hyperbolic van der Waals (vd…
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Is it feasible to alter the ground state properties of a material by engineering its electromagnetic environment? Inspired by theoretical predictions, experimental realizations of such cavity-controlled properties without optical excitation are beginning to emerge. Here, we devised and implemented a novel platform to realize cavity-altered materials. Single crystals of hyperbolic van der Waals (vdW) compounds provide a resonant electromagnetic environment with enhanced density of photonic states and superior quality factor. We interfaced hexagonal boron nitride (hBN) with the molecular superconductor $κ$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br ($κ$-ET). The frequencies of infrared (IR) hyperbolic modes of hBN match the IR-active carbon-carbon stretching molecular resonance of ($κ$-ET) implicated in superconductivity. Nano-optical data supported by first-principles molecular Langevin dynamics simulations confirm the presence of resonant coupling between the hBN hyperbolic cavity modes and the carbon-carbon stretching mode in ($κ$-ET). Meissner effect measurements via magnetic force microscopy demonstrate a strong suppression of superfluid density near the hBN/($κ$-ET) interface. Non-resonant control heterostructures, including RuCl$_3$/($κ$-ET) and hBN/$\text{Bi}_2\text{Sr}_2\text{CaCu}_2\text{O}_{8+x}$, do not display the superfluid suppression. These observations suggest that hBN/($κ$-ET) realizes a cavity-altered superconducting ground state. This work highlights the potential of dark cavities devoid of external photons for engineering electronic ground state properties of materials using IR-active phonons.
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Submitted 9 June, 2025; v1 submitted 22 May, 2025;
originally announced May 2025.
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Topological electron and phonon flat bands in novel kagome superconductor XPd5 (X=Ca, Sr, Ba)
Authors:
Jiefeng Ye,
Zhigao Huang,
Xianxin Wu,
Jian-Min Zhang
Abstract:
Fermionic and bosonic localized states induced by geometric frustration in the kagome lattice provide a distinctive research platform for investigating emergent exotic quantum phenomena in strongly correlated systems. Here, we report the discovery of coexisting electronic and phononic flat bands induced by geometric frustration in a novel kagome superconductor XPd5 (X=Ca, Sr, Ba). The electronic f…
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Fermionic and bosonic localized states induced by geometric frustration in the kagome lattice provide a distinctive research platform for investigating emergent exotic quantum phenomena in strongly correlated systems. Here, we report the discovery of coexisting electronic and phononic flat bands induced by geometric frustration in a novel kagome superconductor XPd5 (X=Ca, Sr, Ba). The electronic flat band is located around the Fermi level and possesses a nontrivial topological invariant with Z2=1. Additionaly, we identify multiple van Hove singularities (vHS) arise from the kagome Pd d orbitals with distinct dispersion and sublattice features, including conventional, higher-order vHS and p-type, m-type vHS. Specifically, our investigation of the vibrational modes of the phononic flat band reveals that its formation originates from destructive interference between adjacent kagome lattice sites with antiphase vibrational modes. A spring-mass model of phonons is established to probe the physical mechanism of the phononic flat bands. Furthermore, the calculations of electron-phonon coupling in the XPd5 reveal superconducting ground states with critical temperatures (Tc) of 4.25 K, 2.75 K, and 3.35 K for CaPd5, SrPd5, and BaPd5, respectively. This work provides a promising platform to explore the Fermion-boson many-body interplay and superconducting states, while simultaneously establishing a novel analytical framework to elucidate the origin of phononic flat bands in quantum materials.
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Submitted 27 May, 2025; v1 submitted 20 May, 2025;
originally announced May 2025.
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Angle-dependent resonant tunneling and thermoelectric energy management in a hybrid 1D-2D-1D semiconductor nanostructure
Authors:
Xiaoguang Luo,
Jiaming Wang,
Jiawen Dai,
Junqiang Zhang,
Nian Liu
Abstract:
Low-dimensional semiconductors have been widely exploited in thermoelectric energy conversion for high efficiencies due to their suppressed lattice thermal conduction, sharply defined electronic density of states, and tunable energy-selective electron transmission. However, the widespread challenge of Fermi-level pinning or doping constraints limit precise control over thermoelectric energy manage…
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Low-dimensional semiconductors have been widely exploited in thermoelectric energy conversion for high efficiencies due to their suppressed lattice thermal conduction, sharply defined electronic density of states, and tunable energy-selective electron transmission. However, the widespread challenge of Fermi-level pinning or doping constraints limit precise control over thermoelectric energy management via chemical potential modulation. Here, we proposed an alternative strategy: leveraging angle-dependent electron incidence to dynamically manipulate electron transmission and heat transport, which was implemented theoretically in a two-dimensional InP/InAs/InP double-barrier heterostructure integrated with laterally one-dimensional electrodes. By combining the transfer matrix method and Landauer formalism, we demonstrated the angle-dependent resonant tunneling dynamics, tunable negative differential resistance effect, and near-Carnot limits in thermoelectric energy conversions. Angular modulation enables precise control over transmission resonances, facilitating dynamic transitions among thermoelectric regimes (power generation, cooling, and hybrid heating) without requiring extreme chemical potential shifts. This work establishes angularly resolved electron transmission as a versatile mechanism for on-chip thermal management and cryogenic applications, offering a pathway to circumvent material limitations in next-generation nanoelectronics and quantum devices.
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Submitted 16 May, 2025;
originally announced May 2025.
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Emerging axion detection in artificial magnetoelectric materials
Authors:
Runyu Lei,
Chen-Hui Xie,
Jiayi Liu,
Zhong Liu,
Xin Liu,
Yu Gao,
Sichun Sun,
Jinxing Zhang
Abstract:
The origin of dark matter is a fundamental problem in physics. Axions are considered a key component of dark matter, characterized by very weak Chern-Simons couplings to electromagnetism, gravity, and fermions. We propose a novel symmetry-breaking detection mechanism in magnetoelectric materials, allowing for a linear axionic coupling between magnetism and ferroelectric polarization. We focus on s…
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The origin of dark matter is a fundamental problem in physics. Axions are considered a key component of dark matter, characterized by very weak Chern-Simons couplings to electromagnetism, gravity, and fermions. We propose a novel symmetry-breaking detection mechanism in magnetoelectric materials, allowing for a linear axionic coupling between magnetism and ferroelectric polarization. We focus on strain gradient Sr2IrO4, where the breaking of space-inversion symmetry results in an emergent polar phase and out-of-plane magnetic moment, exhibiting a flexomagnetoelectric effect. In this material, the linear P||M enables direct coupling between the external axion field and the intrinsic axion-like field within the material. This mechanism amplifies the weak electromagnetic signals induced by axions, paving the way for pioneering axion detection. These signals can be detected by monitoring changes in macroscopic physical quantities, such as the magnetoelectric and magnetic responses. In contrast to conventional detection techniques, this mechanism significantly enhances the sensitivity of the axion-electron and axion-photon coupling, providing a novel platform for axion detection and advancing the study of dark matter through the magnetoelectric effect.
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Submitted 13 May, 2025;
originally announced May 2025.
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Observation of high partial-wave Feshbach resonances in $^{39}$K Bose-Einstein condensates
Authors:
Yue Zhang,
Liangchao Chen,
Zekui Wang,
Yazhou Wang,
Pengjun Wang,
Lianghui Huang,
Zengming Meng,
Ran Qi,
Jing Zhang
Abstract:
We report the new observation of several high partial-wave (HPW) magnetic Feshbach resonances (FRs) in $^{39}$K atoms of the hyperfine substate $\left|F=1,m_{F}=-1\right\rangle$. These resonances locate at the region between two broad $s$-wave FRs from 32.6 G to 162.8 G, in which Bose-Einstein condensates (BECs) can be produced with tunable positive scattering length obtained by magnetic FRs. Thes…
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We report the new observation of several high partial-wave (HPW) magnetic Feshbach resonances (FRs) in $^{39}$K atoms of the hyperfine substate $\left|F=1,m_{F}=-1\right\rangle$. These resonances locate at the region between two broad $s$-wave FRs from 32.6 G to 162.8 G, in which Bose-Einstein condensates (BECs) can be produced with tunable positive scattering length obtained by magnetic FRs. These HPW FRs are induced by the dipolar spin-spin interaction with s-wave in the open channel and HPW in the closed channel. Therefore, these HPW FRs have distinct characteristics in temperature dependence and loss line shape from that induced by spin-exchange interaction with HPWs in both open and closed channels. Among these resonances, one $d$-wave and two $g$-wave FRs are confirmed by the multichannel quantum-defect theory (MQDT) calculation. The HPW FRs have significant applications in many-body physics dominated by HPW pairing.
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Submitted 12 May, 2025;
originally announced May 2025.
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Superradiance Enhanced Light-Matter Interaction in Spatially Ordered Shape and Volume Controlled Single Quantum Dots: Enabling On-Chip Photonic Networks
Authors:
Lucas Jordao,
Qi Huang,
Swarnabha Chattaraj,
Siyuan Lu,
Jiefei Zhang,
Anupam Madhukar
Abstract:
On-chip photonic networks require adequately spatially ordered matter-photon interconversion qubit sources with emission figures-of-merit exceeding the requirements that would enable the desired functional response of the network. The mesa-top single quantum dots (MTSQDs) have recently been demonstrated to meet these requirements. The substrate-encoded size-reducing epitaxy (SESRE) approach underp…
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On-chip photonic networks require adequately spatially ordered matter-photon interconversion qubit sources with emission figures-of-merit exceeding the requirements that would enable the desired functional response of the network. The mesa-top single quantum dots (MTSQDs) have recently been demonstrated to meet these requirements. The substrate-encoded size-reducing epitaxy (SESRE) approach underpinning the realization of these unique quantum emitters allows control on the shape, size, and strain (lattice-matched or mismatched) of these epitaxial single quantum dots. We have exploited this unique feature of the MTSQDs to reproducibly create arrays of quantum dots that exhibit single photon superradiance, a characteristic of the SESRE-enabled delicate balance between the confinement pontential volume, depth, the resulting exciton binding energy, and the degree of confinement of the center of mass (CM) motion of the exciton. Scanning transmission electron microscope (STEM) studies reveal the structural (atomic scale) and chemical (nm scale) nature of the material region defining the notion of the shape and volume (here large) of the electron confinement region (i.e. the QD). In the exciton's weake CM confinement regime, owing to its coherent sampling of the large volume, enhancement of the MTSQD oscillator strength to ~30 is demonstrated. Theoretical modelling with input from the STEM finding provide corroboration for single photon superradiance causing enhancement of the oscillator strength by ~2.5 to 3. Our findings allow fabricating and studying interconnected networks enabled by the unique matter qubit-light qubit interconversion units that can be realized for lattice matched and mismatched material combinations covering UV to midinfrared wavelength range.
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Submitted 10 July, 2025; v1 submitted 10 May, 2025;
originally announced May 2025.
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Superconducting susceptibility signal captured in a record wide pressure range
Authors:
Shu Cai,
Jinyu Zhao,
Di Peng,
Yazhou Zhou,
Jing Guo,
Nana Li,
Jianbo Zhang,
Yang Ding,
Wenge Yang,
Qiaoshi Zeng,
Qi Wu,
Tao Xiang,
Ho-kwang Mao,
Liling Sun
Abstract:
In recent years, the resistance signature of the high temperature superconductivity above 250 K in highly compressed hydrides (more than 100 GPa) has garnered significant attention within the condensed matter physics community. This has sparked renewed optimism for achieving superconductivity under room-temperature conditions. However, the superconducting diamagnetism, another crucial property for…
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In recent years, the resistance signature of the high temperature superconductivity above 250 K in highly compressed hydrides (more than 100 GPa) has garnered significant attention within the condensed matter physics community. This has sparked renewed optimism for achieving superconductivity under room-temperature conditions. However, the superconducting diamagnetism, another crucial property for confirming the superconductivity, has yet to be conclusively observed. The primary challenge arises from the weak diamagnetic signals detected from the small samples compressed in diamond anvil cells. Therefore, the reported results of superconducting diamagnetism in hydrides have sparked intense debate, highlighting the urgent need for workable methodology to assess the validity of the experimental results. Here, we are the first to report the ultrahigh pressure measurements of the superconducting diamagnetism on Nb0.44Ti0.56, a commercial superconducting alloy, in a record-wide pressure range from 5 GPa to 160 GPa. We present detailed results on factors such as sample size, the diamagnetic signal intensity, the signal-to-noise ratio and the superconducting transition temperature across various pressures and different pressure transmitting media. These comprehensive results clearly demonstrate that this alloy is an ideal reference sample for evaluating superconductivity in compressed hydrides,validating the credibility of the experimental systems and superconducting diamagnetic results, as well as determining the nature of the superconductivity of the investigated sample. In addition, these results also provide a valuable benchmark for studying the pressure-induced superconductivity in other material families.
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Submitted 8 May, 2025;
originally announced May 2025.
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Probing orbital magnetism of a kagome metal CsV3Sb5 by a tuning fork resonator
Authors:
Hengrui Gui,
Lin Yang,
Xiaoyu Wang,
Dong Chen,
Zekai Shi,
Jiawen Zhang,
Jia Wei,
Keyi Zhou,
Walter Schnelle,
Yongjun Zhang,
Yu Liu,
Alimamy F. Bangura,
Ziqiang Wang,
Claudia Felser,
Huiqiu Yuan,
Lin Jiao
Abstract:
The recently discovered kagome metal CsV$_3$Sb$_5$ exhibits a complex phase diagram that encompasses frustrated magnetism, topological charge density wave (CDW), and superconductivity. One CDW state that breaks time-reversal symmetry was proposed in this compound, while the exact nature of the putative magnetic state remains elusive. To examine the thermodynamic state of CsV$_3$Sb$_5$ and assess t…
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The recently discovered kagome metal CsV$_3$Sb$_5$ exhibits a complex phase diagram that encompasses frustrated magnetism, topological charge density wave (CDW), and superconductivity. One CDW state that breaks time-reversal symmetry was proposed in this compound, while the exact nature of the putative magnetic state remains elusive. To examine the thermodynamic state of CsV$_3$Sb$_5$ and assess the character of the associated magnetism, we conducted tuning fork resonator measurements of magnetotropic susceptibility over a broad range of angles, magnetic fields, and temperature. We found a cascade of phase transition in the CDW phase. Of particular interest is a highly anisotropic magnetic structure that arises below about 30~K, with a magnetic moment along the $c$-axis that has an extremely small magnitude. This magnetic state demonstrates extremely slow dynamics and small saturate field, all suggest that electronic phase below 30~K breaks time reversal symmetry and has an unconventional origin.
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Submitted 8 May, 2025;
originally announced May 2025.
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Direct evidence of intrinsic Mott state and its layer-parity oscillation in a breathing kagome crystal down to monolayer
Authors:
Huanyu Liu,
Wenhui Li,
Zishu Zhou,
Hongbin Qu,
Jiaqi Zhang,
Weixiong Hu,
Chenhaoping Wen,
Ning Wang,
Hao Deng,
Gang Li,
Shichao Yan
Abstract:
We report direct spectroscopic evidence of correlation-driven Mott states in layered Nb$_3$Cl$_8$ through combining scanning tunneling microscopy (STM) and dynamical mean-field theory. The Hubbard bands persist down to monolayer, providing the definitive evidence for the Mottness in Nb$_3$Cl$_8$. While the size of the Mott gap remains almost constant across all layers, a striking layer-parity-depe…
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We report direct spectroscopic evidence of correlation-driven Mott states in layered Nb$_3$Cl$_8$ through combining scanning tunneling microscopy (STM) and dynamical mean-field theory. The Hubbard bands persist down to monolayer, providing the definitive evidence for the Mottness in Nb$_3$Cl$_8$. While the size of the Mott gap remains almost constant across all layers, a striking layer-parity-dependent oscillation emerges in the local density of states (LDOS) between even (n = 2,4,6) and odd layers (n = 1,3,5), which arises from the dimerization and correlation modulation of the obstructed atomic states, respectively. Our conclusions are supported by a critical technical advance in atomic-scale LDOS mapping for highly insulating systems. This work provides the definitive experimental verification of correlation-driven Mott ground states in Nb3Cl8 while establishing a general protocol for investigating the interplay of electronic correlation and interlayer coupling in layered insulators by using low-temperature STM technique.
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Submitted 7 May, 2025;
originally announced May 2025.
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Landau theory description of autferroicity
Authors:
Jun-Jie Zhang,
Boris I. Yakobson,
Shuai Dong
Abstract:
Autferroics, recently proposed as a sister branch of multiferroics, exhibit strong intrinsic magnetoelectricity, but ferroelectricity and magnetism are mutually exclusive rather than coexisting. Here, a general model is considered based on the Landau theory, to clarify the distinction between multi and autferroics by qualitative change-rotation in Landau free energy landscape and in particular pha…
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Autferroics, recently proposed as a sister branch of multiferroics, exhibit strong intrinsic magnetoelectricity, but ferroelectricity and magnetism are mutually exclusive rather than coexisting. Here, a general model is considered based on the Landau theory, to clarify the distinction between multi and autferroics by qualitative change-rotation in Landau free energy landscape and in particular phase mapping. The TiGeSe$_3$ exemplifies a factual material, whose first-principles computed Landau coefficients predict its autferroicity. Our investigations pave the way for an alternative avenue in the pursuit of intrinsically strong magnetoelectrics.
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Submitted 3 May, 2025;
originally announced May 2025.
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Materials discovery acceleration by using condition generative methodology
Authors:
Caiyuan Ye,
Yuzhi Wang,
Xintian Xie,
Tiannian Zhu,
Jiaxuan Liu,
Yuqing He,
Lili Zhang,
Junwei Zhang,
Zhong Fang,
Lei Wang,
Zhipan Liu,
Hongming Weng,
Quansheng Wu
Abstract:
With the rapid advancement of AI technologies, generative models have been increasingly employed in the exploration of novel materials. By integrating traditional computational approaches such as density functional theory (DFT) and molecular dynamics (MD), existing generative models, including diffusion models and autoregressive models, have demonstrated remarkable potential in the discovery of no…
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With the rapid advancement of AI technologies, generative models have been increasingly employed in the exploration of novel materials. By integrating traditional computational approaches such as density functional theory (DFT) and molecular dynamics (MD), existing generative models, including diffusion models and autoregressive models, have demonstrated remarkable potential in the discovery of novel materials. However, their efficiency in goal-directed materials design remains suboptimal. In this work we developed a highly transferable, efficient and robust conditional generation framework, PODGen, by integrating a general generative model with multiple property prediction models. Based on PODGen, we designed a workflow for the high-throughput crystals conditional generation which is used to search new topological insulators (TIs). Our results show that the success rate of generating TIs using our framework is 5.3 times higher than that of the unconstrained approach. More importantly, while general methods rarely produce gapped TIs, our framework succeeds consistently, highlighting an effectively $\infty$ improvement. This demonstrates that conditional generation significantly enhances the efficiency of targeted material discovery. Using this method, we generated tens of thousands of new topological materials and conducted further first-principles calculations on those with promising application potential. Furthermore, we identified promising, synthesizable topological (crystalline) insulators such as CsHgSb, NaLaB$_{12}$, Bi$_4$Sb$_2$Se$_3$, Be$_3$Ta$_2$Si and Be$_2$W.
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Submitted 30 April, 2025;
originally announced May 2025.
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Observation of Intrinsic and LED Light-Enhanced Memristor Performance in In-Plane Ferroelectric NbOI2
Authors:
Zheng Hao,
Gaolei Zhao,
Haoran Li,
Jizhang Zhang,
Jiabin Liu,
Fanyi Kong,
Konstantin Kozadaev,
Yongjiang Li,
Xue Han,
Hong Li,
Huolin Huang,
Changsen Sun,
Alexei Tolstik,
Andrey Novitsky,
Lujun Pan,
Dawei Li
Abstract:
Two-dimensional (2D) layered ferroelectrics, as an emerging area of research, have attracted extensive attention, while memristors based on new 2D ferroelectric materials have yet to be fully explored, thereby limiting their applications in modern nanoelectronics. In this work, we report the observation of intrinsic memristive behavior in a newly discovered 2D in-plane ferroelectric material, NbOI…
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Two-dimensional (2D) layered ferroelectrics, as an emerging area of research, have attracted extensive attention, while memristors based on new 2D ferroelectric materials have yet to be fully explored, thereby limiting their applications in modern nanoelectronics. In this work, we report the observation of intrinsic memristive behavior in a newly discovered 2D in-plane ferroelectric material, NbOI2, and the giant enhancement of the memristive performance using LED visible light. The results show that NbOI2 exhibits intrinsically strong memristive response with a current on/off ratio of up to 10^4 and stable switching cycles, which is independent of back-gate voltage. Under LED visible light illumination, the current on/off ratio in NbOI2 is over one order of magnitude higher than that without light, meanwhile, the coercive field is significantly reduced to less than 1.22 kVcm-1, much lower than other 2D ferroelectric material-based memristors. Interestingly, both the intrinsic and the light-enhanced resistive switching phenomena only occur along the in-plane b-axis direction, indicating that the memristive behavior in NbOI2 is driven by electric field-induced and optical field-enhanced ferroelectric polarization switching mechanisms, as evidenced by a combined orientation-dependent electrical/optoelectrical measurement and sweep cycle-induced structural evolution analysis. Our study not only provides a materials strategy based on new 2D ferroelectrics for designing memristor applications, but also offers a simple optical method to enhance its performance, paving the path for its implementation in novel nanoelectronics and optoelectronics.
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Submitted 30 April, 2025;
originally announced April 2025.
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Observation of gauge field induced non-Hermitian helical spin skin effects
Authors:
Yi Li,
Jia-Hui Zhang,
Yang Kou,
Liantuan Xiao,
Suotang Jia,
Linhu Li,
Feng Mei
Abstract:
Synthetic gauge fields and non-Hermitian skin effects are pivotal to topological phases and non-Hermitian physics, each recently attracting great interest across diverse research fields. Notably, realizing skin effects typically require nonreciprocal couplings or on-site gain and loss. Here, we theoretically and experimentally report that, under gauge fields, non-Hermitian systems with reciprocal…
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Synthetic gauge fields and non-Hermitian skin effects are pivotal to topological phases and non-Hermitian physics, each recently attracting great interest across diverse research fields. Notably, realizing skin effects typically require nonreciprocal couplings or on-site gain and loss. Here, we theoretically and experimentally report that, under gauge fields, non-Hermitian systems with reciprocal couplings and without gain and loss, can nontrivially give rise to an unprecedented nonreciprocal skin effect, featuring helical spin-dependent skin accumulations, dubbed as the ``helical spin skin effect". Specifically, we construct a lattice model with reciprocal dissipative couplings and gauge fields, implemented in circuit metamaterials. Before introducing the gauge fields, this model exhibits localized spin edge modes and extended bulk modes, without skin effects. As the gauge field strength is applied from $0$ to $π$, we observe the emergence of two distinct spin skin effects and their transitions: the hybrid-order and second-order helical spin skin effects. Furthermore, we show that these effects can be harnessed to realize helical spin-dependent nonreciprocal transmissions. Our findings not only highlight gauge field induced and enriched non-Hermitian topology, but also brings spin-dependent helicity into skin effects and nonreciprocality.
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Submitted 25 April, 2025;
originally announced April 2025.
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Surface morphology and thickness variation estimation of zeolites via electron ptychography
Authors:
Enci Zhang,
Zhuoya Dong,
Xubin Han,
Jianhua Zhang,
Yanhang Ma,
Huaidong Jiang
Abstract:
Zeolites, as representative porous materials, possess intricate three-dimensional frameworks that endow them with high surface areas and remarkable catalytic properties. There are a few factors that give a huge influence on the catalytic properties, including the size and connectivity of these three-dimensional channels and atomic level defects. In additional to that, the surface morphology and th…
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Zeolites, as representative porous materials, possess intricate three-dimensional frameworks that endow them with high surface areas and remarkable catalytic properties. There are a few factors that give a huge influence on the catalytic properties, including the size and connectivity of these three-dimensional channels and atomic level defects. In additional to that, the surface morphology and thickness variation of zeolites particles are essential to their catalytic performances as well. However, it is a significant challenge to characterize these macroscopic properties of zeolites using conventional techniques due to their sensitivity to electron beams. In this study, we introduce surface-adaptive electron ptychography, an advanced approach based on multi-slice electron ptychography, which enables high-precision reconstruction of both local atomic configurations and global structural features in zeolite nanoparticles. By adaptively optimizing probe defocus and slice thickness during the reconstruction process, SAEP successfully resolves surface morphology, thickness variations and atomic structure simultaneously. This integrated framework facilitates a direct and intuitive correlation between zeolite channel structures and particle thickness. Our findings open new pathways for large-scale, comprehensive structure property analysis of beam-sensitive porous materials, deepening the understanding of their catalytic behavior.
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Submitted 24 April, 2025;
originally announced April 2025.
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Language Models for Materials Discovery and Sustainability: Progress, Challenges, and Opportunities
Authors:
Zongrui Pei,
Junqi Yin,
Jiaxin Zhang
Abstract:
Significant advancements have been made in one of the most critical branches of artificial intelligence: natural language processing (NLP). These advancements are exemplified by the remarkable success of OpenAI's GPT-3.5/4 and the recent release of GPT-4.5, which have sparked a global surge of interest akin to an NLP gold rush. In this article, we offer our perspective on the development and appli…
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Significant advancements have been made in one of the most critical branches of artificial intelligence: natural language processing (NLP). These advancements are exemplified by the remarkable success of OpenAI's GPT-3.5/4 and the recent release of GPT-4.5, which have sparked a global surge of interest akin to an NLP gold rush. In this article, we offer our perspective on the development and application of NLP and large language models (LLMs) in materials science. We begin by presenting an overview of recent advancements in NLP within the broader scientific landscape, with a particular focus on their relevance to materials science. Next, we examine how NLP can facilitate the understanding and design of novel materials and its potential integration with other methodologies. To highlight key challenges and opportunities, we delve into three specific topics: (i) the limitations of LLMs and their implications for materials science applications, (ii) the creation of a fully automated materials discovery pipeline, and (iii) the potential of GPT-like tools to synthesize existing knowledge and aid in the design of sustainable materials.
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Submitted 21 April, 2025;
originally announced April 2025.
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Partial-Wetting Phenomena in Active Matter
Authors:
Jing Zhang,
Zhixin Liu,
Shengda Zhao,
Yangjun Yan,
Rongxin Yue,
Jiaxin Yu,
Xinjie Li,
Xinghua Zhang
Abstract:
Abundant interfacial phenomena in nature, such as water droplets on lotus leaves and water transport in plant vessels, originate from partial-wetting phenomena, which can be well described by Young's equation. It remains an intriguing question whether similar behaviors exist in active matter. In this letter, we present a clear demonstration of the partial-wetting phenomenon in a ternary laning sys…
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Abundant interfacial phenomena in nature, such as water droplets on lotus leaves and water transport in plant vessels, originate from partial-wetting phenomena, which can be well described by Young's equation. It remains an intriguing question whether similar behaviors exist in active matter. In this letter, we present a clear demonstration of the partial-wetting phenomenon in a ternary laning system, which is a typical active system. A phase diagram is constructed in which the relative drift velocities of different components govern the transitions among drying, partial wetting, and complete wetting states. The mechanical balance on the contact lines of the partial-wetting phase described by Young's equation is verified. A theoretical picture is proposed to explain the analogy of partial wetting in the laning system to that in the equilibrium system.
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Submitted 20 April, 2025;
originally announced April 2025.
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Mechanical properties of B12-based orthorhombic metal carboborides. A first principle study
Authors:
Oleksiy Bystrenko,
Tianxing Sun,
Zhaohua Luo,
Jingxian Zhang,
Yusen Duan,
Kaiqing Zhang,
Hu Ruan,
Wenyu Tang,
Bohdan Ilkiv,
Svitlana Petrovska,
Tetiana Bystrenko
Abstract:
Structural and mechanical properties of B12-based orthorhombic metal carboborides are studied on the basis of first principle DFT approach. The simulations predict the existence of a new family of phases of the composition MeC2B12 (Me=Mg, Ca, Sr, Sc, Y) with similar structure and space symmetry Imma. It has been found that the predicted phases are thermally (dynamically) stable and have considerab…
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Structural and mechanical properties of B12-based orthorhombic metal carboborides are studied on the basis of first principle DFT approach. The simulations predict the existence of a new family of phases of the composition MeC2B12 (Me=Mg, Ca, Sr, Sc, Y) with similar structure and space symmetry Imma. It has been found that the predicted phases are thermally (dynamically) stable and have considerably better mechanical properties as compared to the reference compound AlMgB14. The respective calculated isotropic elastic moduli and Vickers hardness are significantly higher (G~ 230-250, E~530-550, and Hv~35-55 GPa). These conclusions were confirmed by direct calculations of shear strength for the above phases, which demonstrated the increase of 30-50% in different directions. The enhanced mechanical characteristics of the MgC2B12 -based phases make them promising for creating novel superhard materials
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Submitted 19 April, 2025;
originally announced April 2025.
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Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces
Authors:
Ting Cui,
Ying Zhou,
Qianying Wang,
Dongke Rong,
Haitao Hong,
Axin Xie,
Jun-Jie Zhang,
Qinghua Zhang,
Can Wang,
Chen Ge,
Lin Gu,
Shanmin Wang,
Kuijuan Jin,
Shuai Dong,
Er-Jia Guo
Abstract:
Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interfaces, heterointerfaces between different material classes, such as oxides and nitrides, remain underexplored. Here we present the fabrication of a high-quality Dirac metal antiperovskite Ni3InN, characterized by an extre…
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Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interfaces, heterointerfaces between different material classes, such as oxides and nitrides, remain underexplored. Here we present the fabrication of a high-quality Dirac metal antiperovskite Ni3InN, characterized by an extremely low temperature coefficient of resistivity, approximately 1.8*10^-8 Ω*cm/K, over a broad temperature range. Atomically sharp heterointerfaces between Ni3InN and SrVO3 were constructed, revealing intriguing interfacial phenomena. Leveraging layer-resolved scanning transmission electron microscopy and electron energy loss spectroscopy, we identified pronounced charge transfer across the well-ordered interface. Remarkably, this interfacial electron transfer from Ni3InN to SrVO3 induces an insulating interfacial layer and an emergent magnetic moment within the Ni3InN layer, consistent with first-principles calculations. These findings pave the way for novel electronic and spintronic applications by enabling tunable interfacial properties in nitride/oxide systems.
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Submitted 17 April, 2025;
originally announced April 2025.
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Valley Splitting Correlations Across a Silicon Quantum Well
Authors:
Jonathan C. Marcks,
Emily Eagen,
Emma C. Brann,
Merritt P. Losert,
Tali Oh,
John Reily,
Christopher S. Wang,
Daniel Keith,
Fahd A. Mohiyaddin,
Florian Luthi,
Matthew J. Curry,
Jiefei Zhang,
F. Joseph Heremans,
Mark Friesen,
Mark A. Eriksson
Abstract:
Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the…
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Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the Si/SiGe interfaces, and while Si devices are compatible with large-scale semiconductor manufacturing, achieving a uniformly large valley splitting energy across a many-qubit device spanning mesoscopic distances is an outstanding challenge. In this work we study valley splitting variations in a 1D quantum dot array manufactured by Intel. We observe correlations in valley splitting, at both sub-100nm (single gate) and >1μm (device) lengthscales, that are consistent with alloy disorder-dominated theory and simulation. Our results develop the mesoscopic understanding of Si/SiGe heterostructures necessary for scalable device design.
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Submitted 16 April, 2025;
originally announced April 2025.