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Spin-orbit enabled quantum transport channels in a two-hole double quantum dot
Authors:
Alex Bogan,
Sergei Studenikin,
Marek Korkusinski,
Louis Gaudreau,
Jason Phoenix,
Piotr Zawadzki,
Andy Sachrajda,
Lisa Tracy,
John Reno,
Terry Hargett
Abstract:
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields…
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We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields, we carry out quantitative fitting to a Hubbard two-site model accounting for the tunnel coupling to the leads and the spin-flip relaxation process. We extract the singlet-triplet gap and the magnetic field corresponding to the singlet-triplet transition in the double-hole ground state. Additionally, at the singlet-triplet transition we find a resonant enhancement (in the blockaded direction) and suppression of current (in the conduction direction). The current enhancement stems from the multiple resonance of two-hole levels, opening several conduction channels at once. The current suppression arises from the quantum interference of spin-conserving and spin flipping tunneling processes.
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Submitted 6 April, 2021;
originally announced April 2021.
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Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
Authors:
Alex Bogan,
Sergei Studenikin,
Marek Korkusinski,
Louis Gaudreau,
Piotr Zawadzki,
Andy S. Sachrajda,
Lisa Tracy,
John Reno,
Terry Hargett
Abstract:
We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped inter…
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We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flipping interdot tunneling channel, introducing a distinct interference pattern at finite B. Magneto-transport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin-conserving and spin-flipping, which form closed loops at critical magnetic fields. In one such loop an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.
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Submitted 9 November, 2017;
originally announced November 2017.
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CuSbSe2 photovoltaic devices with 3% efficiency
Authors:
Adam Welch,
Lauryn Baranowski,
Pawel Zawadzki,
Stephan Lany,
Colin Wolden,
Andriy Zakutayev
Abstract:
Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe$_2$, which do not have the conventional tetrahedral semiconductor bonding. Here, we demonstrate 1.5 μm thick CuSbSe$_2$ PV prototypes prepared at 380-410°C by a self-regulat…
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Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe$_2$, which do not have the conventional tetrahedral semiconductor bonding. Here, we demonstrate 1.5 μm thick CuSbSe$_2$ PV prototypes prepared at 380-410°C by a self-regulated sputtering process using the conventional substrate device architecture. The p-type CuSbSe$_2$ absorber has a 1.1 eV optical absorption onset, ~$10^{5}$ cm$^{-1}$ absorption coefficient at 0.3 eV above the onset, and a hole concentration of ~10$^{17}$ cm$^{-3}$. The promising >3% energy conversion efficiency (Jsc = 20 mA/cm$^2$, FF = 0.44, Voc = 0.35 V) in these initial devices is limited by bulk recombination that limits photocurrent, device engineering issues that affect fill factor, and a photovoltage deficit that likely results from the non-ideal CuSbSe2/CdS band offset.
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Submitted 9 May, 2015;
originally announced May 2015.
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Accelerated development of CuSbS2 thin film photovoltaic device prototypes
Authors:
Adam W. Welch,
Lauryn L. Baranowski,
Pawel Zawadzki,
Clay DeHart,
Steve Johnston,
Stephan Lany,
Colin A. Wolden,
Andriy Zakutayev
Abstract:
Development of alternative thin film photovoltaic technologies is an important research topic due to the potential for low-cost, large-scale fabrication of high-efficiency solar cells. Despite the large number of promising alternative absorbers and corresponding contacts, the rate of progress is limited by complications that arise during solar cell fabrication. One potential solution to this probl…
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Development of alternative thin film photovoltaic technologies is an important research topic due to the potential for low-cost, large-scale fabrication of high-efficiency solar cells. Despite the large number of promising alternative absorbers and corresponding contacts, the rate of progress is limited by complications that arise during solar cell fabrication. One potential solution to this problem is the high-throughput combinatorial method, which has been extensively used for research and development of individual absorber and contact materials. Here, we demonstrate an accelerated approach to development of thin film photovoltaic device prototypes based on the novel CuSbS2 absorber, using the device architecture employed for CuInxGa(1-x)Se2 (CIGS). The newly developed three-stage, self-regulated CuSbS2 growth process enables the study of PV device performance trends as a function of phase purity, crystallographic orientation, layer thickness of the absorber, and numerous back contacts. This exploration results in initial CuSbS2 device prototypes with ~1% conversion efficiency; currently limited by low short-circuit current due to poor collection of photoexcited electrons, and a small open-circuit voltage due to a cliff-type conduction band offset at the CuSbS2/CdS interface (suggested by first-principles calculations). Overall, these results illustrate the potential of combinatorial methods to accelerate the development of thin film photovoltaic devices with novel absorbers.
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Submitted 7 April, 2015; v1 submitted 6 April, 2015;
originally announced April 2015.
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Effects of disorder on carrier transport in Cu$_2$SnS$_3$
Authors:
Lauryn L. Baranowski,
Kevin McLaughlin,
Pawel Zawadzki,
Stephan Lany,
Andrew Norman,
Hannes Hempel,
Rainer Eichberger,
Thomas Unold,
Eric S. Toberer,
Andriy Zakutayev
Abstract:
In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu$_2$SnS$_3$ displays cation disorder. In this work, we develop synthetic techniques…
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In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu$_2$SnS$_3$ displays cation disorder. In this work, we develop synthetic techniques to control the disorder in Cu$_2$SnS$_3$ thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered Cu$_2$SnS$_3$. By combining these results with first-principles and Monte Carlo theoretical calculations, we are able to conclude that even ostensibly "ordered" Cu$_2$SnS$_3$ displays minority carrier transport properties corresponding to the disordered structure. The presence of extended planar defects in all samples, observed in TEM imaging, suggests that disorder is present even when it is not detectable using traditional structural characterization methods. The results of this study highlight some of the challenges to the further improvement of Cu$_2$SnS$_3$-based photovoltaics, and have implications for other disordered multinary semiconductors such as CZTS.
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Submitted 6 April, 2015;
originally announced April 2015.
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The visibility study of S-T$_+$ Landau-Zener-Stückelberg oscillations without applied initialization
Authors:
G. Granger,
G. C. Aers,
S. A. Studenikin,
A. Kam,
P. Zawadzki,
Z. R. Wasilewski,
A. S. Sachrajda
Abstract:
Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not…
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Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not initializing the system between measurements. For this we utilize Landau-Zener-Stückelberg oscillations in a double quantum dot circuit. Experimental results are successfully compared to theoretical simulations.
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Submitted 11 January, 2015; v1 submitted 14 April, 2014;
originally announced April 2014.
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Long-range spin transfer in triple quantum dots
Authors:
R. Sánchez,
G. Granger,
L. Gaudreau,
A. Kam,
M. Pioro-Ladrière,
S. A. Studenikin,
P. Zawadzki,
A. S. Sachrajda,
G. Platero
Abstract:
Tunneling in a quantum coherent structure is not restricted to only nearest neighbours. Hopping between distant sites is possible via the virtual occupation of otherwise avoided intermediate states. Here we report the observation of long range transitions in the transport through three quantum dots coupled in series. A single electron is delocalized between the left and right quantum dots while th…
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Tunneling in a quantum coherent structure is not restricted to only nearest neighbours. Hopping between distant sites is possible via the virtual occupation of otherwise avoided intermediate states. Here we report the observation of long range transitions in the transport through three quantum dots coupled in series. A single electron is delocalized between the left and right quantum dots while the centre one remains always empty. Superpositions are formed and both charge and spin are exchanged between the outermost dots. Detection of the process is achieved via the observation of narrow resonances, insensitive to the transport Pauli spin blockade.
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Submitted 5 May, 2014; v1 submitted 18 December, 2013;
originally announced December 2013.
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Bipolar spin blockade and coherent state superpositions in a triple quantum dot
Authors:
M. Busl,
G. Granger,
L. Gaudreau,
R. Sánchez,
A. Kam,
M. Pioro-Ladrière,
S. A. Studenikin,
P. Zawadzki,
Z. R. Wasilewski,
A. S. Sachrajda,
G. Platero
Abstract:
Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified curr…
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Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified current. Currently more complex spin qubit circuits including triple quantum dots are being developed. Here we show both experimentally and theoretically (a) that in a linear triple quantum dot circuit, the spin blockade becomes bipolar with current strongly suppressed in both bias directions and (b) that a new quantum coherent mechanism becomes relevant. Within this mechanism charge is transferred non-intuitively via coherent states from one end of the linear triple dot circuit to the other without involving the centre site. Our results have implications in future complex nano-spintronic circuits.
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Submitted 19 October, 2013;
originally announced October 2013.
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Quantum interference and phonon-mediated back-action in lateral quantum dot circuits
Authors:
G. Granger,
D. Taubert,
C. E. Young,
L. Gaudreau,
A. Kam,
S. A. Studenikin,
P. Zawadzki,
D. Harbusch,
D. Schuh,
W. Wegscheider,
Z. R. Wasilewski,
A. A. Clerk,
S. Ludwig,
A. S. Sachrajda
Abstract:
Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indi…
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Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indicated that quantum point contact detectors emit phonons which are then absorbed by nearby qubits. We report here the observation of a pronounced back-action effect in multiple dot circuits where the absorption of detector-generated phonons is strongly modified by a quantum interference effect, and show that the phenomenon is well described by a theory incorporating both the quantum point contact and coherent phonon absorption. Our combined experimental and theoretical results suggest strategies to suppress back-action during the qubit readout procedure.
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Submitted 30 January, 2013;
originally announced January 2013.
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Enhanced charge detection of spin qubit readout via an intermediate state
Authors:
S. A. Studenikin,
J. Thorgrimson,
G. C. Aers,
A. Kam,
P. Zawadzki,
Z. R. Wasilewski,
A. Bogan,
A. S. Sachrajda
Abstract:
We employ an intermediate excited charge state of a lateral quantum dot device to increase the charge detection contrast during the qubit state readout procedure, allowing us to increase the visibility of coherent qubit oscillations. This approach amplifies the coherent oscillation magnitude but has no effect on the detector noise resulting in an increase in the signal to noise ratio. In this lett…
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We employ an intermediate excited charge state of a lateral quantum dot device to increase the charge detection contrast during the qubit state readout procedure, allowing us to increase the visibility of coherent qubit oscillations. This approach amplifies the coherent oscillation magnitude but has no effect on the detector noise resulting in an increase in the signal to noise ratio. In this letter we apply this scheme to demonstrate a significant enhancement of the fringe contrast of coherent Landau-Zener-Stuckleberg oscillations between singlet S and triplet T+ two-spin states.
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Submitted 4 June, 2012;
originally announced June 2012.
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Quantum interference between three two-spin states in a double quantum dot
Authors:
S. A. Studenikin,
G. C. Aers,
G. Granger,
L. Gaudreau,
A. Kam,
P. Zawadzki,
Z. R. Wasilewski,
A. S. Sachrajda
Abstract:
Qubits based on the singlet (S) and the triplet (T0, T+) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling which confirm these theoretical predictions and identify the con…
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Qubits based on the singlet (S) and the triplet (T0, T+) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling which confirm these theoretical predictions and identify the conditions under which this interference occurs. Density matrix calculations show that the interference pattern manifests primarily via the occupation of the common singlet state. The S/T0 qubit is found to have a much longer coherence time as compared to the S/T+ qubit.
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Submitted 18 January, 2012;
originally announced January 2012.
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Coherent control of three-spin states in a triple quantum dot
Authors:
L. Gaudreau,
G. Granger,
A. Kam,
G. C. Aers,
S. A. Studenikin,
P. Zawadzki,
M. Pioro-Ladrière,
Z. R. Wasilewski,
A. S. Sachrajda
Abstract:
Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electr…
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Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electrical operation, efficient spin busing across a quantum circuit, and to enable quantum error correction utilizing the three-spin Greenberger-Horn-Zeilinger quantum state. Towards these goals we demonstrate for the first time coherent manipulation between two interacting three-spin states. We employ the Landau-Zener-Stückelberg approach for creating and manipulating coherent superpositions of quantum states. We confirm that we are able to maintain coherence when decreasing the exchange coupling of one spin with another while simultaneously increasing its coupling with the third. Such control of pairwise exchange is a requirement of most spin qubit architectures but has not been previously demonstrated.
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Submitted 22 February, 2013; v1 submitted 17 June, 2011;
originally announced June 2011.
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The 3D transport diagram of a triple quantum dot
Authors:
G. Granger,
L. Gaudreau,
A. Kam,
M. Pioro-Ladrière,
S. A. Studenikin,
Z. R. Wasilewski,
P. Zawadzki,
A. S. Sachrajda
Abstract:
We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple qu…
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We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple quantum dot circuit is only possible at six quadruple point locations. The results are consistent with an equivalent circuit model.
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Submitted 16 July, 2010; v1 submitted 11 June, 2010;
originally announced June 2010.
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Transport Detection of Quantum Hall Fluctuations in Graphene
Authors:
Simon Branchaud,
Alicia Kam,
Piotr Zawadzki,
Francois M. Peeters,
Andrew S. Sachrajda
Abstract:
Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic magneto-conductance quantum interference features which develop rapidly as a function of density. At slightly higher fields (> 0.5T), close to the CNP, additional fluctu…
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Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic magneto-conductance quantum interference features which develop rapidly as a function of density. At slightly higher fields (> 0.5T), close to the CNP, additional fluctuations track the quantum Hall sequence expected for monolayer graphene. These additional features are attributed to effects of locally charging individual quantum Hall (QH) localized states. These effects reveal a precursor to the quantum Hall effect (QHE) since, unlike previous transport observations of QH dots charging effects, they occur in the absence of quantum Hall plateaus or Shubnikov- de Haas (SdH) oscillations. From our transport data we are able to extract parameters that characterize the inhomogeneities in our device.
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Submitted 18 December, 2009; v1 submitted 15 October, 2009;
originally announced October 2009.
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Time Resolved Control of Electron Tunnelling Times and Single-shot Spin Readout in a Quantum Dot
Authors:
L. Gaudreau,
A. Kam,
J. B. Kycia,
S. Studenikin,
G. Granger,
P. D. Mason,
P. Zawadzki,
A. S. Sachrajda
Abstract:
We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use to calibrate the tunnel barriers. We make use of this to implement the Delft protocol for single shot single spin readout in a device designed to form a tripl…
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We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use to calibrate the tunnel barriers. We make use of this to implement the Delft protocol for single shot single spin readout in a device designed to form a triple quantum dot potential. We are able to tune the tunnelling times over around three orders of magnitude. We obtain a spin relaxation time of 300 microseconds at 10T.
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Submitted 16 October, 2009; v1 submitted 13 October, 2009;
originally announced October 2009.
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Silencing noisy 2DEG wafers
Authors:
L. Gaudreau,
A. Kam,
P. Zawadzki,
G. Granger,
S. Studenikin,
J. Kycia,
J. Mason,
A. S. Sachrajda
Abstract:
Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant telegraph noise problems can be made to produce 'quiet' devices if a thin insulator layer is placed between the gates and the GaAs/AlGaAs heterostructure. A slow drif…
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Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant telegraph noise problems can be made to produce 'quiet' devices if a thin insulator layer is placed between the gates and the GaAs/AlGaAs heterostructure. A slow drift in the resulting devices is attributed to the trapping of charges within the specific insulator used. This charge can be manipulated, leading to strategies for stabilizing the device.
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Submitted 16 July, 2009; v1 submitted 16 July, 2009;
originally announced July 2009.
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A Tuneable Few Electron Triple Quantum Dot
Authors:
L. Gaudreau,
A. Kam,
G. Granger,
S. A. Studenikin,
P. Zawadzki,
A. S. Sachrajda
Abstract:
In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is important as well as quantum information applications involving electron spin qubits. We demonstrate tuning strategies for achieving required resonant…
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In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is important as well as quantum information applications involving electron spin qubits. We demonstrate tuning strategies for achieving required resonant conditions such as quadruple points where all three quantum dots are on resonance. We find that in such a device resonant conditions at specific configurations are accompanied by novel charge transfer behaviour.
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Submitted 9 July, 2009;
originally announced July 2009.
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Coherent Transport Through a Quadruple Point in a Few Electron Triple Dot
Authors:
L. Gaudreau,
A. S. Sachrajda,
S. Studenikin,
P. Zawadzki,
A. Kam,
J. Lapointe
Abstract:
A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are simultaneously on resonance. At these special points in the stability diagram four occupation configurations are possible. Both charge detection and transport experim…
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A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are simultaneously on resonance. At these special points in the stability diagram four occupation configurations are possible. Both charge detection and transport experiments have been performed on this device. In this short paper we present data and confirm that transport is coherent by observing a Pi phase shift in magneto-conductance oscillations as one passes through the quadruple point.
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Submitted 18 November, 2006;
originally announced November 2006.
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Stability Diagram of a Few-Electron Triple Dot
Authors:
Louis Gaudreau,
Sergei Studenikin,
Andy Sachrajda,
Piotr Zawadzki,
Alicia Kam,
Jean Lapointe,
Marek Korkusinski,
Pawel Hawrylak
Abstract:
Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a sign…
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Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a signature of the three dots being in resonance. In their vicinity we observe a surprising effect, a 'cloning' of charge transfer transitions related to charge and spin reconfigurations. The experimental results are reproduced by equivalent circuit analysis and Hubbard models.
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Submitted 8 September, 2008; v1 submitted 25 January, 2006;
originally announced January 2006.
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Charge Sensing of an Artificial H2+ Molecule
Authors:
M. Pioro-Ladriere,
M. R. Abolfath,
P. Zawadzki,
J. Lapointe,
S. A. Studenikin,
A. S. Sachrajda,
P. Hawrylak
Abstract:
We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and…
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We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and the sensor is taken into account explicitly. From the measurements, we extract the temperature of the isolated electron and the tunnel coupling energy. It is found that this coupling can be tuned between 0 and 60 micro electron-volt in our device.
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Submitted 28 July, 2005; v1 submitted 1 April, 2005;
originally announced April 2005.
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The origin of switching noise in GaAs/AlGaAs lateral gated devices
Authors:
M. Pioro-Ladrière,
J. H. Davies,
A. R. Long,
A. S. Sachrajda,
L. Gaudreau,
P. Zawadzki,
J. Lapointe,
J. Gupta,
Z. Wasilewski,
S. A. Studenikin
Abstract:
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this nois…
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We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this noise, while an asymmetric bias exacerbates it. We propose a model in which the noise originates from a leakage current of electrons that tunnel through the Schottky barrier under the gate into the doped layer. The key to reducing noise is to keep this barrier opaque under experimental conditions. Bias cooling reduces the density of ionized donors, which builds in an effective negative gate voltage. A smaller negative bias is therefore needed to reach the desired operating point. This suppresses tunnelling from the gate and hence the noise. The reduction in the density of ionized donors also strengthens the barrier to tunneling at a given applied voltage. Support for the model comes from our direct observation of the leakage current into a closed quantum dot, around $10^{-20} \mathrm{A}$ for this device. The current was detected by a neighboring quantum point contact, which showed monotonic steps in time associated with the tunneling of single electrons into the dot. If asymmetric gate voltages are applied, our model suggests that the noise will increase as a consequence of the more negative gate voltage applied to one of the gates to maintain the same device conductance. We observe exactly this behaviour in our experiments.
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Submitted 14 June, 2005; v1 submitted 24 March, 2005;
originally announced March 2005.
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Coulomb and Spin blockade of two few-electrons quantum dots in series in the co-tunneling regime
Authors:
M. Ciorga,
M. Pioro-Ladrière,
P. Zawadzki,
J. Lapointe,
Z. Wasilewski,
A. S. Sachrajda
Abstract:
We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is fo…
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We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is found to reflect spin blockade events occurring through either of the two dots. We also confirm that charge redistribution events occurring in the off-resonance dot are detected indirectly via changes in the electrochemical potential of the aligned dot.
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Submitted 2 July, 2004;
originally announced July 2004.
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Spin splitting in open quantum dots
Authors:
M. Evaldsson,
I. V. Zozoulenko,
M. Ciorga,
P. Zawadzki,
A. S. Sachrajda
Abstract:
We present results from a theoretical and experimental study of spin-splitting in small open lateral quantum dots (i.e. in the regime when the dot is connected to the reservoirs via leads that support one or more propagating modes). We demonstrate that the magnetoconductance shows a pronounced splitting of the conductance peaks (or dips) which persists over a wide range of magnetic fields (from…
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We present results from a theoretical and experimental study of spin-splitting in small open lateral quantum dots (i.e. in the regime when the dot is connected to the reservoirs via leads that support one or more propagating modes). We demonstrate that the magnetoconductance shows a pronounced splitting of the conductance peaks (or dips) which persists over a wide range of magnetic fields (from zero field to the edge-state regime) and is virtually independent of magnetic field. A numerical analysis of the conductance and the dot eigenspectrum indicates that this feature is related to a lifting of the spin degeneracy in the corresponding closed dot associated with the interaction between electrons of opposite spin.
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Submitted 19 April, 2004; v1 submitted 12 June, 2003;
originally announced June 2003.
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Spin-blockade spectroscopy of a two-level artificial molecule
Authors:
M. Pioro-Ladriere,
M. Ciorga,
J. Lapointe,
P. Zawadzki,
M. Korkusinski,
P. Hawrylak,
A. S. Sachrajda
Abstract:
Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states…
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Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states of the two-level molecule. We find in addition that the magnetic field induces variations in the tunnel coupling between the two atoms. The lateral nature of the device is evoked to explain this behavior.
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Submitted 29 May, 2003; v1 submitted 20 January, 2003;
originally announced January 2003.
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Metallic and Insulating behaviour in p-SiGe at nu = 3/2
Authors:
P. T. Coleridge,
R. L. Williams,
J. Lapointe,
P. Zawadzki
Abstract:
Shubnikov-de Haas data is presented for a p-SiGe sample exhibiting strongly insulating behaviour at nu = 3/2. In addition to the fixed points defining a high field metal- insulator transition into this phase separate fixed points can also be identified for the nu = 3 --> 2 and 2 --> 1 Integer quantum Hall transitions. Another feature of the data, that the Hall resistivity approaches zero in the…
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Shubnikov-de Haas data is presented for a p-SiGe sample exhibiting strongly insulating behaviour at nu = 3/2. In addition to the fixed points defining a high field metal- insulator transition into this phase separate fixed points can also be identified for the nu = 3 --> 2 and 2 --> 1 Integer quantum Hall transitions. Another feature of the data, that the Hall resistivity approaches zero in the insulating phase, indicates it is not a re-entrant Hall insulator. The behaviour is explained in terms of the strong exchange interactions. At integer filling factors these cause the 0 uparrow and 1 downarrow Landau levels to cross and be well separated but at non-integer values of nu screening reduces exchange effects and causes the levels to stick together. It is suggested the insulating behaviour, and high field metal/insulator transition, is a consequence of the strong exchange interactions.
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Submitted 16 August, 2002;
originally announced August 2002.
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Tunable Negative Differential Resistance controlled by Spin Blockade in Single Electron Transistors
Authors:
M. Ciorga,
M. Pioro-Ladriere,
P. Zawadzki,
P. Hawrylak,
A. S. Sachrajda
Abstract:
We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number and magneti…
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We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number and magnetic field reveal well defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative differential regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot. These results indicate new functionalities that may be utilized in nano-spintronic devices in which the spin state is electro-statically controlled via the electron occupation number.
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Submitted 18 October, 2001;
originally announced October 2001.
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Interaction effects and the metallic phase in p-SiGe
Authors:
P. T. Coleridge,
A. S. Sachrajda,
P. Zawadzki
Abstract:
Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. The results cannot be understood within the framework of standard theories for quantum corrections of a weakly interacting 2- dimensional system. In particular no logarithmic dependence on temperature is observed, at low fields, in either the longitudinal or Hall resistivities d…
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Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. The results cannot be understood within the framework of standard theories for quantum corrections of a weakly interacting 2- dimensional system. In particular no logarithmic dependence on temperature is observed, at low fields, in either the longitudinal or Hall resistivities despite evidence in the magnetoresistance of weak localisation effects. Further, the Hall coefficient shows a strong logarithmic dependence on field. The results are better explain by renormalisation group theories and by an anomalous Hall effect associated with strong spin-orbit coupling in the presence of a background spin texture.
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Submitted 3 November, 2000;
originally announced November 2000.
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The Addition Spectrum of a Lateral Dot from Coulomb and Spin Blockade Spectroscopy
Authors:
M. Ciorga,
A. S. Sachrajda,
P. Hawrylak,
C. Gould,
P. Zawadzki,
S. Jullian,
Y. Feng,
Z. Wasilewski
Abstract:
Transport measurements are presented on a class of electrostatically defined lateral dots within a high mobility two dimensional electron gas (2DEG). The new design allows Coulomb Blockade(CB) measurements to be performed on a single lateral dot containing 0, 1 to over 50 electrons. The CB measurements are enhanced by the spin polarized injection from and into 2DEG magnetic edge states. This com…
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Transport measurements are presented on a class of electrostatically defined lateral dots within a high mobility two dimensional electron gas (2DEG). The new design allows Coulomb Blockade(CB) measurements to be performed on a single lateral dot containing 0, 1 to over 50 electrons. The CB measurements are enhanced by the spin polarized injection from and into 2DEG magnetic edge states. This combines the measurement of charge with the measurement of spin through spin blockade spectroscopy. The results of Coulomb and spin blockade spectroscopy for first 45 electrons enable us to construct the addition spectrum of a lateral device. We also demonstrate that a lateral dot containing a single electron is an effective local probe of a 2DEG edge.
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Submitted 19 April, 2000; v1 submitted 24 December, 1999;
originally announced December 1999.
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Weak localisation, interaction effects and the metallic phase in p-SiGe
Authors:
P. T. Coleridge,
A. S. Sachrajda,
P. Zawadzki
Abstract:
Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. It was possible to separate the weak localisation and Zeeman interaction effects but the results could not be explained quantitatively within the framework of standard theories for quantum corrections of a weakly interacting 2-dimensional system. Analysis using a theory for inte…
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Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. It was possible to separate the weak localisation and Zeeman interaction effects but the results could not be explained quantitatively within the framework of standard theories for quantum corrections of a weakly interacting 2-dimensional system. Analysis using a theory for interaction corrections at intermediate temperatures, recently proposed by Zala, Narozhny and Aleiner, provided values of the Fermi liquid parameter $F_0^σ$ of order -0.5. Similar values also explain the linear increase of resistance with temperature characteristic of the metallic phase. e
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Submitted 21 December, 2001; v1 submitted 2 December, 1999;
originally announced December 1999.
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Quantum Phase Transitions in the p-SiGe system
Authors:
P. T. Coleridge,
P. Zawadzki,
A. Sachrajda,
Y. Feng,
R. L. Williams
Abstract:
The rich variety of phase transitions observed in the strained p-SiGe system are considered and compared. It is shown that the integer quantum Hall effect transitions, the Hall insulating transition and the re-entrant transition into an insulating phase near filling factor 3/2 are all very similar and good examples of quantum critical phase transitions. The B=0 metal insulator transition also sh…
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The rich variety of phase transitions observed in the strained p-SiGe system are considered and compared. It is shown that the integer quantum Hall effect transitions, the Hall insulating transition and the re-entrant transition into an insulating phase near filling factor 3/2 are all very similar and good examples of quantum critical phase transitions. The B=0 metal insulator transition also shows many similarities to these transitions but requires the inclusion of an extra impurity scattering term to fully explain the data.
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Submitted 20 September, 1999;
originally announced September 1999.
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Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System
Authors:
P. T. Coleridge,
P. Zawadzki,
A. S. Sachrajda,
R. L. Williams,
Y. Feng
Abstract:
Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator transition and the filling factor $ν$=3/2 insulating state is demonstrated.
Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator transition and the filling factor $ν$=3/2 insulating state is demonstrated.
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Submitted 17 June, 1999;
originally announced June 1999.
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On the thermal broadening of a quantum critical phase transition
Authors:
P. T. Coleridge,
P. Zawadzki
Abstract:
The temperature dependence of an integer Quantum Hall effect transition is studied in a sample where the disorder is dominated by short-ranged potential scattering. At low temperatures the results are consistent with a $(T/T_0)^κ$ scaling behaviour and at higher temperatures by a linear dependence similar to that reported in other material systems. It is shown that the linear behaviour results f…
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The temperature dependence of an integer Quantum Hall effect transition is studied in a sample where the disorder is dominated by short-ranged potential scattering. At low temperatures the results are consistent with a $(T/T_0)^κ$ scaling behaviour and at higher temperatures by a linear dependence similar to that reported in other material systems. It is shown that the linear behaviour results from thermal broadening produced by the Fermi-Dirac distribution function and that the temperature dependence over the whole range depends only on the scaling parameter T$_0^κ$.
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Submitted 16 March, 1999;
originally announced March 1999.
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Adiabatic Behaviour of a 2-D Hole Gas near the B=0 Metal-Insulator transition
Authors:
P. T. Coleridge,
A. S. Sachrajda,
P. Zawadzki,
R. L. Williams,
Y. Feng
Abstract:
No abstract available.
No abstract available.
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Submitted 27 April, 1998; v1 submitted 20 January, 1998;
originally announced January 1998.
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Metal Insulator transition at B=0 in p-SiGe
Authors:
P. T. Coleridge,
R. L. Williams,
Y. Feng,
P. Zawadzki
Abstract:
Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that decreases exponentially with decreasing temperature. This behaviour, and the duality between resistivity and conductivity on the two sides of the…
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Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that decreases exponentially with decreasing temperature. This behaviour, and the duality between resistivity and conductivity on the two sides of the transition, are very similar to that recently reported for high mobility Si-MOSFETs.
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Submitted 16 August, 1997; v1 submitted 15 August, 1997;
originally announced August 1997.
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The Quantum Hall Effect and Inter-edge State Tunneling Within a Barrier
Authors:
B. L. Johnson,
A. S. Sachrajda,
G. Kirczenow,
Y. Feng,
R. P. Taylor,
L. Henning,
J. Wang,
P. Zawadzki,
P. T. Coleridge
Abstract:
We have introduced a controllable nano-scale incursion into a potential barrier imposed across a two-dimensional electron gas, and report on the phenomena that we observe as the incursion develops. In the quantum Hall regime, the conductance of this system displays quantized plateaus, broad minima and oscillations. We explain these features and their evolution with electrostatic potential geomet…
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We have introduced a controllable nano-scale incursion into a potential barrier imposed across a two-dimensional electron gas, and report on the phenomena that we observe as the incursion develops. In the quantum Hall regime, the conductance of this system displays quantized plateaus, broad minima and oscillations. We explain these features and their evolution with electrostatic potential geometry and magnetic field as a progression of current patterns formed by tunneling between edge and localized states within the barrier.
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Submitted 15 February, 1995; v1 submitted 7 February, 1995;
originally announced February 1995.
