Polarization dependent femtosecond laser modification of MBE-grown III-V nanostructures on silicon
Authors:
Sander R. Zandbergen,
Ricky Gibson,
Babak Amirsolaimani,
Soroush Mehravar,
Patrick Keiffer,
Ali Azarm,
Khanh Kieu
Abstract:
We report a novel, polarization dependent, femtosecond laser-induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1…
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We report a novel, polarization dependent, femtosecond laser-induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1 um, and circular polarization causes the nanostructures to flatten out or form loops of material, to diameters of approximately 195 nm. During excitation, it is also observed that the generated second and third harmonic signals from the substrate and surface nanostructures increase with exposure time.
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Submitted 31 May, 2017; v1 submitted 9 March, 2017;
originally announced March 2017.