Showing 1–38 of 38 results for author: Zaitsev-Zotov, S V

Slow Oscillations of the Transverse Magnetoresistance in HoTe3

Authors: S. V. Zaitsev-Zotov, P. D. Grigoriev, D. Voropaev, A. A. Morocho, I. A. Cohn, E. Pachoud, A. Hadj-Azzem, P. Monceau

Abstract: Slow oscillations of the magnetoresistance periodic in the inverse magnetic field with a frequency of 3.4 T have been identified in HoTe3. The temperature dependence of the oscillation amplitude is close to exponential even at low temperatures. This may be attributed to the existence of soft modes in the system and allows the estimation of the electron scattering rate on these modes. In the region… ▽ More Slow oscillations of the magnetoresistance periodic in the inverse magnetic field with a frequency of 3.4 T have been identified in HoTe3. The temperature dependence of the oscillation amplitude is close to exponential even at low temperatures. This may be attributed to the existence of soft modes in the system and allows the estimation of the electron scattering rate on these modes. In the region of magnetic fields exceeding 1 T, the oscillations can be described as interference oscillations associated with the splitting of the band structure due to the bilayer structure of HoTe3. The obtained data have allowed us to calculate the ratio tb/tz~7.7 of the hopping integrals between layers within each bilayer (tb) and between the adjacent bilayers (tz) to estimate these integrals as tb ~ 2 meV and tz ~ 0.26 meV. △ Less

Submitted 21 March, 2025; v1 submitted 17 March, 2025; originally announced March 2025.

Comments: 7 pages of the paper + 9 pages of supplementary materials

Journal ref: JETP Lett. 121, 142-148 (2025)

Strain-induced proximity effect in topological insulator TaSe$_3$

Authors: R. M. Lukmanova, I. A. Cohn, V. E. Minakova, S. V. Zaitsev-Zotov

Abstract: The magnetoresistance of superconductor-topological insulator-superconductor structures, with indium as the superconductor and TaSe$_3$ as the topological insulator, shows steplike features on the resistance under magnetic fields. These resistance steps are resulted from the suppression of superconductivity, induced by the superconducting proximity effect in both the bulk and surface states of the… ▽ More The magnetoresistance of superconductor-topological insulator-superconductor structures, with indium as the superconductor and TaSe$_3$ as the topological insulator, shows steplike features on the resistance under magnetic fields. These resistance steps are resulted from the suppression of superconductivity, induced by the superconducting proximity effect in both the bulk and surface states of the topological insulator. The position and amplitude of the steps, occurring at approximately 0.1 T, show an unusual dependence on the magnitude of the uniaxial strain ($ε$), indicating their connection with surface states. This behavior follows the expected transition sequence: semi-metal $\rightarrow$ strong topological insulator $\rightarrow$ trivial insulator, and supports the presence of surface states at $0.46\% \lesssim ε\lesssim 0.85\%$. △ Less

Submitted 22 April, 2025; v1 submitted 4 February, 2025; originally announced February 2025.

Comments: 5 pages, 6 figures

Compact computer controlled biaxial tensile device for low-temperature transport measurements of layered materials

Authors: S. V. Zaitsev-Zotov

Abstract: A biaxial tensile device for the transport study of layered materials is described. The device is mounted on the standard 24 pin zero force connector and can be moved between various setups. The compact design of the device makes it suitable for a wide range of studies. In our case, it is placed inside a 50 mm diameter chamber in the cryocooler and is used in the temperature range 9-310 K. A sampl… ▽ More A biaxial tensile device for the transport study of layered materials is described. The device is mounted on the standard 24 pin zero force connector and can be moved between various setups. The compact design of the device makes it suitable for a wide range of studies. In our case, it is placed inside a 50 mm diameter chamber in the cryocooler and is used in the temperature range 9-310 K. A sample is glued in the center of a polyimide cruciform substrate, the ends of which are connected to a tension system driven by four computer-controlled stepper motors providing tensile force up to 30 N. Computer simulation results and their experimental verification show that tensile strain along one axis depends on the tensile load along the perpendicular direction, and this dependence turns out to be relatively strong and exceeds 40\%. The operation of the device is demonstrated by studying the effect of deformation on the electrical conductivity of the layered compound 2H-NbS2. △ Less

Submitted 17 January, 2025; v1 submitted 30 November, 2023; originally announced November 2023.

Comments: New version: 6 pages, 8 figures

Journal ref: Rev. Sci. Instrum. 95, 063905 (2024)

Superconductivity in thin films of RuN

Authors: A. S. Ilin, A. O. Strugova, I. A. Cohn, V. V. Pavlovskiy, A. V. Sadakov, O. A. Sobolevskiy, L. A. Morgun, V. P. Matrovitskii, G. V. Rybalchenko, S. V. Zaitsev-Zotov

Abstract: Superconductivity has been found in RuN films obtained by reactive magnetron sputtering. This is a novel member of the metal nitride superconductors family. The critical temperature of the superconducting transition varies depending on the substrate and ranges from 0.77 K to 1.29 K. The parameters of the crystal lattice of superconducting films have been determined: the lattice is distorted cubic… ▽ More Superconductivity has been found in RuN films obtained by reactive magnetron sputtering. This is a novel member of the metal nitride superconductors family. The critical temperature of the superconducting transition varies depending on the substrate and ranges from 0.77 K to 1.29 K. The parameters of the crystal lattice of superconducting films have been determined: the lattice is distorted cubic with parameters $a = b = c = 4.5586$ Å, $α=β=γ=87.96^\circ$. A zero temperature upper critical magnetic field $H_{c2}(0)$ and the coherence length were found from the experimental data using WHH model. $H_{c2}(0) = 2.3$ T- 4.1 T for different substrates and exceeds the upper paramagnetic limit, as well as $ξ= 12$ nm. An s-wave single band energy gap $Δ(0) = 0.19$ meV was revealed by self-field critical current experiment at temperatures down to 10 mK, $2Δ/kT_c =5.5$ exceeding the BCS ratio 3.5. △ Less

Submitted 24 February, 2024; v1 submitted 14 October, 2023; originally announced October 2023.

Comments: 10 pages, 16 figures

Activated and quantum creep of the charge-density waves in magnetic field in {\it o}-TaS$_3$

Authors: I. A. Cohn, S. V. Zaitsev-Zotov

Abstract: We demonstrate that magnetoresistance of creeping charge-density waves in the quasi-one dimensional conductor {\it o}-TaS$_3$ changes its character from a negative parabolic at $T\gtrsim 10$ K where it obeys $1/T^2$ law to a weakly temperature dependent negative nearly linear one at lower temperatures. The dominant contribution into the negative parabolic magnetoresistance comes from magnetic fiel… ▽ More We demonstrate that magnetoresistance of creeping charge-density waves in the quasi-one dimensional conductor {\it o}-TaS$_3$ changes its character from a negative parabolic at $T\gtrsim 10$ K where it obeys $1/T^2$ law to a weakly temperature dependent negative nearly linear one at lower temperatures. The dominant contribution into the negative parabolic magnetoresistance comes from magnetic field induced splitting of the CDW order parameter. The linear magnetoresistance arises due to CDW quantum interference similar to the scenario of negative linear magnetoresistance in single-electron systems. △ Less

Submitted 22 August, 2023; v1 submitted 19 April, 2023; originally announced April 2023.

Comments: Paper: 8 pages and 10 figures; Supplementary materials: 3 pages and 6 figures

Journal ref: Phys. Rev. B 108, 115124 (2023)

Scanning tunneling microscopy of Bi$_2$Te$_3$ films prepared by pulsed laser deposition: from nanocrystalline structures to van der Waals epitaxy

Authors: N. I. Fedotov, A. A. Maizlakh, V. V. Pavlovskiy, G. V. Rybalchenko, S. V. Zaitsev-Zotov

Abstract: Bi$_2$Te$_3$ is a material with high efficiency of thermoelectric energy conversion. Recently, it was also recognized as a topological insulator, and is often used as the basis for creation of other types of topological matter. Pulsed laser deposition (PLD) is widely considered as a simple method for growing of multicomponent films, but not as a tool for van der Waals epitaxy. We demonstrate here… ▽ More Bi$_2$Te$_3$ is a material with high efficiency of thermoelectric energy conversion. Recently, it was also recognized as a topological insulator, and is often used as the basis for creation of other types of topological matter. Pulsed laser deposition (PLD) is widely considered as a simple method for growing of multicomponent films, but not as a tool for van der Waals epitaxy. We demonstrate here that the van der Waals epitaxy of Bi$_2$Te$_3$ is indeed impossible in vacuum PLD, but is possible in the presence of a background gas, which is confirmed by the results of scanning tunneling microscopy and spectroscopy studies. Results of {\it ab initio} calculations reproduce tunneling spectra of the first three terraces of epitaxial films of Bi$_2$Te$_3$. In addition, an unusual hexagonal superstructure resembling a charge-density wave is observed in overheated films. △ Less

Submitted 20 May, 2022; v1 submitted 13 March, 2022; originally announced March 2022.

Comments: 10 pages, 10 figures, to be published in Surfaces and Interfaces

Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I

Authors: I. A. Cohn, S. G. Zybtsev, A. P. Orlov, S. V. Zaitsev-Zotov

Abstract: Magnetic field effect on linear and nonlinear conductivity in a quasi-one-dimensional Weyl semimetal with a charge density wave (CDW) (TaSe$_4$)$_2$I is studied. Longitudinal magnetoresistance in all known regimes of CDW motion (linear conduction, creep, sliding, "Fröhlich superconductivity") is small, positive and do not exceed a fraction of per cent. Similar magnetotransport measurements were pe… ▽ More Magnetic field effect on linear and nonlinear conductivity in a quasi-one-dimensional Weyl semimetal with a charge density wave (CDW) (TaSe$_4$)$_2$I is studied. Longitudinal magnetoresistance in all known regimes of CDW motion (linear conduction, creep, sliding, "Fröhlich superconductivity") is small, positive and do not exceed a fraction of per cent. Similar magnetotransport measurements were performed in samples profiled by focused ion beams is such a way that motion of the CDW in them is accompanied by phase slip of the CDW. In such samples, a peak-like non-parabolic negative magnetoresistance is observed in relatively small magnetic fields $B \lesssim 4$ T in the nonlinear conduction regime in both longitudinal and transverse geometries. Our results differ significantly from ones obtained earlier and raise the question concerning conditions for observing the axion anomaly in Weyl semimetals in the Peierls state. △ Less

Submitted 3 July, 2020; v1 submitted 22 June, 2020; originally announced June 2020.

Comments: Minor grammar corrections and text alternations

Journal ref: JETP Letters, 2020, Vol. 112, No. 2, pp. 88-94

Non-quadratic transverse magnetoresistance of the nodal line Dirac semimetal InBi

Authors: S. V. Zaitsev-Zotov, I. A. Cohn

Abstract: The transverse magnetoresistance of a nodal line Dirac semi-metal InBi has been studied. It is found that the magnetoresistance is not quadratic. In the region of small magnetic fields $ B\lesssim 0.1$~T, it is characterized by high curvature, in the region of medium magnetic fields it is described by the sum of linear and quadratic contributions, and in the region of large magnetic fields… ▽ More The transverse magnetoresistance of a nodal line Dirac semi-metal InBi has been studied. It is found that the magnetoresistance is not quadratic. In the region of small magnetic fields $ B\lesssim 0.1$~T, it is characterized by high curvature, in the region of medium magnetic fields it is described by the sum of linear and quadratic contributions, and in the region of large magnetic fields $ B\gtrsim 1$~T, it approaches a quadratic law with a curvature several times smaller its zero field value. A phenomenological equation is proposed that allows to describe the entire dependence of the resistance on the magnetic field with an error not exceeding the measurement error of several percent. △ Less

Submitted 11 December, 2019; originally announced December 2019.

Comments: RevTeX, 5 pages, 6 figures, to be published in JETP Letters

Journal ref: JETP Letters (2020)

A new type of charge-density-wave pinning in orthorhombic TaS$_3$ crystals with quenching defects

Authors: V. E. Minakova, A. M. Nikitina, S. V. Zaitsev-Zotov

Abstract: Diminishing in the concentration of quenching defects during thermocycling of orthorhombic TaS$_3$ samples in the temperature range below the Peierls transition temperature $T <T_P$ is observed. It makes it possible to study the character of pinning of the charge density wave (CDW) by these defects. A number of fundamental differences from pinning by ordinary local pinning centers - impurities and… ▽ More Diminishing in the concentration of quenching defects during thermocycling of orthorhombic TaS$_3$ samples in the temperature range below the Peierls transition temperature $T <T_P$ is observed. It makes it possible to study the character of pinning of the charge density wave (CDW) by these defects. A number of fundamental differences from pinning by ordinary local pinning centers - impurities and point defects - have been found. We conclude that quenching defects are extended (non-local) objects (presumably, dislocations) that can diffuse from the crystal during low-temperature termocycling due to their strong interaction with the CDW, which is intrinsic for the Peierls conductors. The presence of these defects leads to a previously unknown non-local type of CDW pinning that acts on $T_P$ and the threshold field for the onset of the CDW sliding, $E_T$, differently in comparison with the local pinning centers. △ Less

Submitted 29 June, 2019; originally announced July 2019.

Comments: LaTeX, 6 pages, 5 figures

Journal ref: JETP Letters vol. 110 (2019)

Numerical analysis of surface and edge states in slabs, stripes, rods and surface steps of topological insulators

Authors: N. I. Fedotov, S. V. Zaitsev-Zotov

Abstract: By numerically solving the effective continuous model of a topological insulator with parameters corresponding to the band structure of the topological insulator Bi2Se3 , we analyze possible appearance of one-dimensional states in various geometries. Massless Dirac fermions are found at the edges of thin ribbons with surface oriented not only along the van der Waals gap but also in the perpendicul… ▽ More By numerically solving the effective continuous model of a topological insulator with parameters corresponding to the band structure of the topological insulator Bi2Se3 , we analyze possible appearance of one-dimensional states in various geometries. Massless Dirac fermions are found at the edges of thin ribbons with surface oriented not only along the van der Waals gap but also in the perpendicular direction. Thick rods and slabs with surface steps host massive modes localized on surface faces. We argue that the modes are massive and their origin is due to the difference in the Dirac point energy of adjacent faces. The absence of one-dimensional states near edges of a large rectangular rod and surface steps is demonstrated. △ Less

Submitted 11 October, 2018; v1 submitted 24 July, 2018; originally announced July 2018.

Comments: 9 pages, 10 figures; revised version, additional references, extended introduction and method description, enhanced figures

Journal ref: N I Fedotov and S V Zaitsev-Zotov 2018 J. Phys.: Condens. Matter 30 485301

Experimental Observation of Bound States of 2D Dirac Electrons at Surface Steps of the Topological Insulator Bi$_2$Se$_3$

Authors: N. I. Fedotov, S. V. Zaitsev-Zotov

Abstract: Topologically protected surface states of three-dimensional topological insulators provide a model framework for studying massless Dirac electrons in two dimensions. Usually a step on the surface of a topological insulator is treated as a scatterer for the Dirac electrons, and the study of its effect is focused on the interference of the incident and scattered electrons. Then a major role plays th… ▽ More Topologically protected surface states of three-dimensional topological insulators provide a model framework for studying massless Dirac electrons in two dimensions. Usually a step on the surface of a topological insulator is treated as a scatterer for the Dirac electrons, and the study of its effect is focused on the interference of the incident and scattered electrons. Then a major role plays the warping of the Dirac cone far from the Dirac point. The existence of another significant effect near the Dirac point brought about by the presence of steps is experimentally demonstrated here. Namely the band bending in the vicinity of steps leads to formation of 1D bound states in the corresponding potential wells. The observation of bound states in such potential wells in our scanning tunneling microscopy and spectroscopy investigation of the surface of the topological insulator Bi$_2$Se$_3$ is reported. Numerical simulations support our conclusion and provide a recipe for the identification of such states. △ Less

Submitted 11 January, 2019; v1 submitted 23 May, 2018; originally announced May 2018.

Comments: revtex, 5 pages, 3 figures, revised version, updated introduction and reference list, removed figure 4; DOI and new abstract

The Basic and the Charge Density Wave Modulated Structures of NbS3-II

Authors: E. Zupanič, H. J. P. van Midden, M. van Midden, S. Šturm, E. Tchernychova, V. Ya. Pokrovskii, S. G. Zybtsev, V. F. Nasretdinova, S. V. Zaitsev-Zotov, W. T. Chen, W. W. Pai, J. C. Bennett, A. Prodan

Abstract: The basic and the charge density wave (CDW) structures of the monoclinic $NbS_3-II$ polymorph were studied by synchrotron x-ray diffraction, ab-initio calculation, simulation of electron diffraction patterns and by atomic-resolution transmission electron and low-temperature scanning tunneling microscopies. It is shown that the basic structure belongs to the space group $P2_1/m$ and is described wi… ▽ More The basic and the charge density wave (CDW) structures of the monoclinic $NbS_3-II$ polymorph were studied by synchrotron x-ray diffraction, ab-initio calculation, simulation of electron diffraction patterns and by atomic-resolution transmission electron and low-temperature scanning tunneling microscopies. It is shown that the basic structure belongs to the space group $P2_1/m$ and is described with a unit cell, formed of four pairs of symmetry-related trigonal prismatic (TP) columns ($a_0$ = 0.96509(8) nm, $b_0$ = 0.33459(2) nm, $c_0$ = 1.9850(1) nm, $β_0$ = 110.695(4) deg), with all Nb and S atoms in $2e$ special positions. The two CDWs, with $\vec{q_1}$ = (0, 0.298,0) and $\vec{q_2}$ = (0, 0.352, 0), form their own modulation unit cells ($a_m$ = $2a_0$, $b_m$ = $b_0/q_{jb}$, $c_m$ = $c_0$, $β_m$ = $β_0$) and are ordered pairwise along adjacent isosceles TP columns. The symmetries of both $\vec{q_j}$ modes belong to the space group $Cm$ and are related according to the $2a$ special positions. If considered as long-period commensurate, the entire modulated structure with both CDWs included is best described with an enlarged unit cell ($a$ = $2a_0$, $b$ = $37b_0$, $c$ = $c_0$, $β$ = $β_0$), with all Nb and S atoms in $1a$ positions of the space group $P1$. △ Less

Submitted 26 April, 2018; v1 submitted 6 April, 2018; originally announced April 2018.

Comments: v2.Minor changes to figures and text

Journal ref: Phys. Rev. B 98, 174113 (2018)

Electronic correlation effects and Coulomb gap in the Si(111)-$(\sqrt{3}\times\sqrt{3})$-Sn surface

Authors: A. B. Odobescu, A. A. Maizlakh, N. I. Fedotov, S. V. Zaitsev-Zotov

Abstract: Electronic transport properties of the Si(111)-$(\sqrt{3}\times\sqrt{3})$-Sn surface formed on low doped Si substrates are studied using two-probe conductivity measurements and tunnelling spectroscopy. We demonstrate that the ground state corresponds to Mott-Hubbard insulator with a band gap $2Δ= 70$meV, which vanishes quickly upon temperature increase. The temperature dependence of the surface co… ▽ More Electronic transport properties of the Si(111)-$(\sqrt{3}\times\sqrt{3})$-Sn surface formed on low doped Si substrates are studied using two-probe conductivity measurements and tunnelling spectroscopy. We demonstrate that the ground state corresponds to Mott-Hubbard insulator with a band gap $2Δ= 70$meV, which vanishes quickly upon temperature increase. The temperature dependence of the surface conductivity above $T > 50$K corresponds to the Efros-Shklovskii hopping conduction law. The energy gap at the Fermi level observed in tunnelling spectroscopy measurements at higher temperatures could be described in terms of dynamic Coulomb blockade approximation. The obtained localization length of electron is $ξ= 7$Å. △ Less

Submitted 15 December, 2016; originally announced December 2016.

Comments: 5 pages, 15 figures

Journal ref: Phys. Rev. B 95, 195151 (2017)

Experimental search for one-dimensional edge states at surface steps of the topological insulator Bi$_2$Se$_3$: Distinguishing between effects and artifacts

Authors: N. I. Fedotov, S. V. Zaitsev-Zotov

Abstract: The results of a detailed study of the topological insulator Bi$_2$Se$_3$ surface state energy structure in the vicinity of surface steps using scanning tunneling microscopy and spectroscopy methods are presented. An increase in the chemical potential level $μ$ near the step edge is observed. The value of the increase $δμ\sim 0.1$~eV is found to correlate with the step height. The effect is caused… ▽ More The results of a detailed study of the topological insulator Bi$_2$Se$_3$ surface state energy structure in the vicinity of surface steps using scanning tunneling microscopy and spectroscopy methods are presented. An increase in the chemical potential level $μ$ near the step edge is observed. The value of the increase $δμ\sim 0.1$~eV is found to correlate with the step height. The effect is caused by redistribution of electron wave functions between the outer and inner edges of surface steps, as known for normal metals. The smaller value of the chemical potential shift and its larger characteristic length of $\sim 10$~nm reflect specifics of the helical surface states. This increase is accompanied by enlargement of the normalized differential tunneling conductance in the helical surface states energy region and thereby produces the illusion of the appearance of edge states. We show that the enlargement is reproduced in the framework of the tunneling model taking into account the tunneling gap transparency change when the chemical potential moves away from the Dirac point. △ Less

Submitted 8 April, 2017; v1 submitted 28 September, 2016; originally announced September 2016.

Comments: RevTeX, 8 pages, 11 figures

Journal ref: Phys. Rev. B 95, 155403 (2017)

Energy gap in tunneling spectroscopy: effect of the chemical potential shift

Authors: N. I. Fedotov, S. V. Zaitsev-Zotov

Abstract: We study the effect of a shift of the chemical potential level on the tunneling conductance spectra. In the systems with gapped energy spectra, significant chemical-potential dependent distortions of the differential tunneling conductance curves, $dI/dV$, arise in the gap region. An expression is derived for the correction of the $dI/dV$, which in a number of cases was found to be large. The sign… ▽ More We study the effect of a shift of the chemical potential level on the tunneling conductance spectra. In the systems with gapped energy spectra, significant chemical-potential dependent distortions of the differential tunneling conductance curves, $dI/dV$, arise in the gap region. An expression is derived for the correction of the $dI/dV$, which in a number of cases was found to be large. The sign of the correction depends on the chemical potential level position with respect to the gap. The correction of the $dI/dV$ associated with the chemical potential shift has a nearly linear dependence on the tip-sample separation $z$ and vanishes at $z\to 0$. △ Less

Submitted 19 October, 2016; v1 submitted 27 September, 2016; originally announced September 2016.

Comments: LaTeX, 5 pages, 7 fifures, small alterations in the text, accepted for publication in JETP Letters

NbS$_{3}$: A unique quasi one-dimensional conductor with three charge density wave transitions

Authors: S. G. Zybtsev, V. Ya. Pokrovskii, V. F. Nasretdinova, S. V. Zaitsev-Zotov, V. V. Pavlovskiy, A. B. Odobesco, Woei Wu Pai, M. -W. Chu, Y. G. Lin, E. Zupanič, H. J. P. van Midden, S. Šturm, E. Tchernychova, A. Prodan, J. C. Bennett, I. R. Mukhamedshin, O. V. Chernysheva, A. P. Menushenkov, V. B. Loginov, B. A. Loginov, A. N. Titov, Mahmoud Abdel-Hafiez

Abstract: Through transport, compositional and structural studies, we review the features of the charge-density wave (CDW) conductor of NbS$_{3}$ (phase II). We highlight three central results: 1) In addition to the previously reported CDW transitions at $T_{P1}$ = 360\,K and $T_{P2}$ = 150\,K, another CDW transition occurs at a much higher temperature $T_{P0}$ = 620-650\,K; evidence for the non-linear cond… ▽ More Through transport, compositional and structural studies, we review the features of the charge-density wave (CDW) conductor of NbS$_{3}$ (phase II). We highlight three central results: 1) In addition to the previously reported CDW transitions at $T_{P1}$ = 360\,K and $T_{P2}$ = 150\,K, another CDW transition occurs at a much higher temperature $T_{P0}$ = 620-650\,K; evidence for the non-linear conductivity of this CDW is presented. 2) We show that CDW associated with the $T_{P2}$ - transition arises from S vacancies acting as donors. Such a CDW transition has not been observed before. 3) We show exceptional coherence of the $T_{P1}$-CDW at room-temperature. Additionally, we report on the effects of uniaxial strain on the CDW transition temperatures and transport. △ Less

Submitted 30 June, 2016; originally announced June 2016.

Comments: 16 pages, 18 figures

Journal ref: Phys. Rev. B 95, 035110 (2017)

Electron correlation effects in transport and tunneling spectroscopy of the Si(111)-$7\times 7$ surface

Authors: A. B. Odobescu, A. A. Maizlakh, S. V. Zaitsev-Zotov

Abstract: Electronic properties of the Si(111)-$7\times 7$ surface are studied using four- and two-probe conductivity measurements and tunneling spectroscopy. We demonstrate that the temperature dependence of the surface conductivity corresponds to the Efros-Shklovskii law at least in $10-100$~K temperature range. The energy gap at the Fermi level observed in tunneling spectroscopy measurements at… ▽ More Electronic properties of the Si(111)-$7\times 7$ surface are studied using four- and two-probe conductivity measurements and tunneling spectroscopy. We demonstrate that the temperature dependence of the surface conductivity corresponds to the Efros-Shklovskii law at least in $10-100$~K temperature range. The energy gap at the Fermi level observed in tunneling spectroscopy measurements at $T\geq 5$~K vanishes by thermal fluctuations at $T\approx 30$~K, without any sign of the metal-insulator transition. We show that the low-temperature energy gap observed by the tunneling spectroscopy technique is actually the consequence of the Coulomb blockade effect. △ Less

Submitted 4 December, 2015; v1 submitted 20 November, 2014; originally announced November 2014.

Comments: 5 pages, 5 figures, alternations in the text and figures

Journal ref: Phys. Rev. B 92, 165313 (2015)

Indium doping-induced change in the photoconduction spectra of o-TaS3

Authors: V. F. Nasretdinova, E. B. Yakimov, S. V. Zaitsev-Zotov

Abstract: Impurities and defects are known to affect the properties of the charge density wave (CDW) state but the influence of impurities on the density of states inside the Peierls gap remains largely unexplored. Here we present an experimental study of the effect of indium impurities on photoconduction spectra of CDW compound orthorhombic TaS$_3$. We use the temperature diffusion method to introduce indi… ▽ More Impurities and defects are known to affect the properties of the charge density wave (CDW) state but the influence of impurities on the density of states inside the Peierls gap remains largely unexplored. Here we present an experimental study of the effect of indium impurities on photoconduction spectra of CDW compound orthorhombic TaS$_3$. We use the temperature diffusion method to introduce indium into a sample from preliminary attached In contacts. The concentration of In after 23 hours of diffusion is found to be nonuniform and strongly dependent on the distance to the contacts. The diffusion affects the spectral range 0.15-0.25 eV, increasing the photoconduction amplitude linearly with diffusion time. The optical gap value obtained from the measurements is $2Δ= 0.25$ eV and the tail of states below $2Δ$ is associated with the impurities in agreement with the Tüttö-Zawadowski theory. Diffusion-induced modification of current-voltage characteristics and decrease of the Peierls temperature are also observed. Neither changes in photoconduction spectra nor in the Peierls transition temperature of the control sample with Au contacts are found. △ Less

Submitted 2 November, 2014; originally announced November 2014.

Comments: 6 pages, 6 figures. To be published in Physica B

Photoconduction in the Peierls conductor monoclinic TaS$_3$

Authors: V. E. Minakova, V. F. Nasretdinova, S. V. Zaitsev-Zotov

Abstract: Photoconduction in the monoclinic phase of quasi-one-dimensional conductor TaS$_3$ has been observed at $T < 70$~K. It was studied jointly with low-temperature ohmic and non-linear dark conduction. The strong sample quality dependence of both photoconduction and dark conduction at this temperature region has been observed. Together with a similarity of the main features of the photoconduction char… ▽ More Photoconduction in the monoclinic phase of quasi-one-dimensional conductor TaS$_3$ has been observed at $T < 70$~K. It was studied jointly with low-temperature ohmic and non-linear dark conduction. The strong sample quality dependence of both photoconduction and dark conduction at this temperature region has been observed. Together with a similarity of the main features of the photoconduction characteristic of both monoclinic ({\it m-}TaS$_3$) and orthorhombic ({\it o-}TaS$_3$) samples the following new peculiarities of photoconduction in {\it m-}TaS$_3$ were found: 1) the dependence of the activation energy of photoconduction on temperature, $T$, 2) the change of the recombination mechanism from the linear type to the collisional one at low $T$ with a sample quality growth, 3) the existence of a fine structure of the electric-field dependence of photoconduction. Spectral study gives the Peierls energy gap value $2Δ^*= 0.18$~eV. △ Less

Submitted 1 November, 2014; originally announced November 2014.

Comments: To be published in Physica B

Charge-density waves physics revealed by photoconduction

Authors: S. V. Zaitsev-Zotov, V. F. Nasretdinova, V. E. Minakova

Abstract: The results of photoconduction study of the Peierls conductors are reviewed. The studied materials are quasi-one-dimensional conductors with the charge-density wave: K$_{0.3}$MoO$_3$, both monoclinic and orthorhombic TaS$_3$ and also a semiconducting phase of NbS$_3$ (phase I). Experimental methods, relaxation times, effects of illumination on linear and nonlinear charge transport, the electric-fi… ▽ More The results of photoconduction study of the Peierls conductors are reviewed. The studied materials are quasi-one-dimensional conductors with the charge-density wave: K$_{0.3}$MoO$_3$, both monoclinic and orthorhombic TaS$_3$ and also a semiconducting phase of NbS$_3$ (phase I). Experimental methods, relaxation times, effects of illumination on linear and nonlinear charge transport, the electric-field effect on photoconduction and results of the spectral studies are described. We demonstrate, in particular, that a simple model of modulated energy gap slightly smoothed by fluctuations fits the available spectral data fairly well. The level of the fluctuations is surprisingly small and does not exceed a few percent of the optical energy gap value. △ Less

Submitted 1 November, 2014; v1 submitted 26 October, 2014; originally announced October 2014.

Comments: 7 pages, 11 figures. To be published in Physica B

Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$

Authors: A. Yu. Dmitriev, N. I. Fedotov, V. F. Nasretdinova, S. V. Zaitsev-Zotov

Abstract: The results of ultra-high vacuum low-temperature scanning-tunneling microscopy (STM) and spectroscopy (STS) of atomically clean (111) surface of the topological insulator Bi$_2$Se$_3$ are presented. We observed several types of new subsurface defects whose location and charge correspond to p-type conduction of grown crystals. The sign of the thermoelectric effect also indicates p-type conduction.… ▽ More The results of ultra-high vacuum low-temperature scanning-tunneling microscopy (STM) and spectroscopy (STS) of atomically clean (111) surface of the topological insulator Bi$_2$Se$_3$ are presented. We observed several types of new subsurface defects whose location and charge correspond to p-type conduction of grown crystals. The sign of the thermoelectric effect also indicates p-type conduction. STM and STS measurements demonstrate that the chemical potential is always located inside the bulk band gap. We also observed changes in the local density of states in the vicinity of the quintuple layer steps at the studied surface. This changes correspond either to the shift of the Dirac cone position or to the shift of the chemical potential near the step edge. △ Less

Submitted 6 December, 2014; v1 submitted 21 August, 2014; originally announced August 2014.

Comments: 4 pages, 8 figures; missed page inserted

Journal ref: JETP Letters, November 2014, Volume 100, Issue 6, pp 398-402; Pis'ma v ZhETF, Volume 100, Issue 442-446 (2014)

Energy gap revealed by low-temperature scanning-tunnelling spectroscopy of Si(111)-7x7 surface in illuminated slightly-doped crystals

Authors: A. B. Odobescu, S. V. Zaitsev-Zotov

Abstract: Physical properties of Si(111)-7x7 surface of low-doped n- and p-type Si samples is studied in the liquid helium temperature region by the scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination removes completely the band bending near the surface and restores initial population of the surface states… ▽ More Physical properties of Si(111)-7x7 surface of low-doped n- and p-type Si samples is studied in the liquid helium temperature region by the scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination removes completely the band bending near the surface and restores initial population of the surface states. Our results indicate the existence of the energy gap 2Δ = 40 \pm 10 meV in intrinsically-populated Si(111)-7x7 surface. △ Less

Submitted 19 June, 2012; v1 submitted 14 June, 2012; originally announced June 2012.

Comments: Submitted to Journal of Physics: Condensed Matter

Photoconduction in CDW conductors

Authors: S. V. Zaitsev-Zotov, V. E. Minakova, V. F. Nasretdinova, S. G. Zybtsev

Abstract: Photoconduction study of quasi-1D conductors allows to distinguish between the single-particle and collective {\it linear} conduction, investigate the effect of screening on collective transport and obtain interesting new details of the electronic energy structure of pure and doped CDW conductors. Here we present results of photoconduction study in quasi-1D conductors o-TaS$_3$, K$_{0.3}$MoO$_3$,… ▽ More Photoconduction study of quasi-1D conductors allows to distinguish between the single-particle and collective {\it linear} conduction, investigate the effect of screening on collective transport and obtain interesting new details of the electronic energy structure of pure and doped CDW conductors. Here we present results of photoconduction study in quasi-1D conductors o-TaS$_3$, K$_{0.3}$MoO$_3$, and NbS$_3$(I). △ Less

Submitted 15 December, 2011; originally announced December 2011.

Comments: Invited talk at ECRYS 2011, 6 pages, 13 figures, to be published in Physica B: Condensed Matter

New phenomena in CDW systems at small scales

Authors: S. V. Zaitsev-Zotov

Abstract: The electrophysical properties of quasi-one-dimensional conductors with a charge-density wave change qualitatively upon a decrease in their transverse sizes. A brief review of various finite-size effects and the present-day knowledge of their origin is presented. The electrophysical properties of quasi-one-dimensional conductors with a charge-density wave change qualitatively upon a decrease in their transverse sizes. A brief review of various finite-size effects and the present-day knowledge of their origin is presented. △ Less

Submitted 22 July, 2011; originally announced July 2011.

Comments: Invited talk at the Collaborative workshop "Charge density waves: small scales and ultrashort time" (28. - 31. October 2010., Vukovar, Croatia) http://vukovar2010.ifs.hr/Documents/Abstracts/11_Zaitsev-Zotov_Vukovar2010.pdf

Electronic states inside the gap of quasi-one-dimensional conductor NbS_3(I)

Authors: V. F. Nasretdinova, S. V. Zaitsev-Zotov

Abstract: The photoconductivity spectra of NbS_3 (phase I) crystals are studied. A drop of photoconductivity corresponding to the Peierls gap edge is observed. Reproducible spectral features are found at energies smaller the energy gap value. The first one is a peak at the energy 0.6 eV that is close to the midgap one. It has a threshold-like dependence of the amplitude on the electrical field applied. Anot… ▽ More The photoconductivity spectra of NbS_3 (phase I) crystals are studied. A drop of photoconductivity corresponding to the Peierls gap edge is observed. Reproducible spectral features are found at energies smaller the energy gap value. The first one is a peak at the energy 0.6 eV that is close to the midgap one. It has a threshold-like dependence of the amplitude on the electrical field applied. Another feature is a peak at the energy 0.9 eV near to the edge of the gap. We ascribe the origin of this peak to the stacking faults. The third one are continuous states between these peaks at energies 0.6-0.8 eV. We observed bleaching of the photoconductivity even below zero at this energies in the high electric field (700 V/cm) and under additional illumination applied. △ Less

Submitted 22 February, 2011; originally announced February 2011.

Comments: Collaborative workshop "Charge density waves: small scales and ultrashort time", 28 - 31 October 2010, Vukovar, Croatia

Electric-field-dependent energy structure of quasi-one-dimensional conductor o-TaS_3

Authors: V. F. Nasretdinova, S. V. Zaitsev-Zotov

Abstract: Energy structure of the Peierls gap in orthorhombic TaS$_3$ is examined by spectral study of photoconduction. The gap edge and energy levels inside the Peierls gap are observed. The amplitude of the energy levels is found to depend on both the temperature and the electric field. The electric field of the order of 10 V/cm affects the energy levels and leads to the redistribution of intensity betw… ▽ More Energy structure of the Peierls gap in orthorhombic TaS$_3$ is examined by spectral study of photoconduction. The gap edge and energy levels inside the Peierls gap are observed. The amplitude of the energy levels is found to depend on both the temperature and the electric field. The electric field of the order of 10 V/cm affects the energy levels and leads to the redistribution of intensity between peaks. The small value of the electric field indicates participation of the collective state in formation of the energy levels inside the Peierls gap. △ Less

Submitted 14 May, 2009; v1 submitted 26 December, 2008; originally announced December 2008.

Comments: revtex, 5 pages with 3 figures

Journal ref: Russian version: JETP Letters 89: 607, 2009

Evidence for collective linear conduction in the Peierls conductor o-TaS_3

Authors: S. V. Zaitsev-Zotov, V. E. Minakova

Abstract: Using photoconduction study we demonstrate that the low-temperature Ohmic conduction of TaS$_3$ is not provided by single-particle excitations -- electrons and holes excited over the Peierls gap. Instead, the low-temperature Ohmic conduction is mostly provided by collective excitations having the activation energy about half of the Peierls gap value and shunting the contribution of electrons and… ▽ More Using photoconduction study we demonstrate that the low-temperature Ohmic conduction of TaS$_3$ is not provided by single-particle excitations -- electrons and holes excited over the Peierls gap. Instead, the low-temperature Ohmic conduction is mostly provided by collective excitations having the activation energy about half of the Peierls gap value and shunting the contribution of electrons and holes. △ Less

Submitted 8 December, 2006; v1 submitted 7 December, 2005; originally announced December 2005.

Comments: RevTeX4, 4 pages, 4 figures. Revised version with more detailed discussion. To be published in Physical Review Letters

One-dimensional conduction in Charge-Density Wave nanowires

Authors: E. Slot, M. A. Holst, H. S. J. van der Zant, S. V. Zaitsev-Zotov

Abstract: We report a systematic study of the transport properties of coupled one-dimensional metallic chains as a function of the number of parallel chains. When the number of parallel chains is less than 2000, the transport properties show power-law behavior on temperature and voltage, characteristic for one-dimensional systems. We report a systematic study of the transport properties of coupled one-dimensional metallic chains as a function of the number of parallel chains. When the number of parallel chains is less than 2000, the transport properties show power-law behavior on temperature and voltage, characteristic for one-dimensional systems. △ Less

Submitted 16 March, 2004; originally announced March 2004.

Comments: 4 pages, 5 figures, submitted to Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 93, 176602 (2004)

Photoconduction and photocontrolled collective effects in the Peierls conductor TaS$_3$

Authors: S. V. Zaitsev-Zotov, V. E. Minakova

Abstract: Light illumination of thin crystals of CDW conductor TaS$_3$ is found to result in dramatic changes of both linear ($G$) and nonlinear conduction. The increase of $G$ is accompanied by suppression of the collective conduction, growth of the threshold field $E_T$, and appearance of the switching and hysteretic behavior in the nonlinear conduction. The effects in the nonlinear conduction are assoc… ▽ More Light illumination of thin crystals of CDW conductor TaS$_3$ is found to result in dramatic changes of both linear ($G$) and nonlinear conduction. The increase of $G$ is accompanied by suppression of the collective conduction, growth of the threshold field $E_T$, and appearance of the switching and hysteretic behavior in the nonlinear conduction. The effects in the nonlinear conduction are associated with increase of CDW elasticity due to illumination that leads in particular to appearance of a relation $E_T\propto G^{1/3}$ expected for the one-dimensional pinning. △ Less

Submitted 13 October, 2004; v1 submitted 27 January, 2004; originally announced January 2004.

Comments: RevTeX4, 4 pages, 4 postscript figures. Revised manuscript, new title, new Fig. 1, text corrections. Journal reference added

Journal ref: Pis'ma v JETP v.79, 680 (2004) [JETP Letters v. 79, 550 (2004)]

Peierls transition as spatially inhomogeneous gap suppression

Authors: V. Ya. Pokrovskii, A. V. Golovnya, S. V. Zaitsev-Zotov

Abstract: We propose a model of the Peierls transition (PT) taking into account amplitude fluctuations of the charge-density waves and spontaneous thermally activated suppression of the Peierls gap, akin to the phase slip process. The activation results in the exponential growth of the normal phase with increasing temperature. The model fairly describes the behavior of resistance, thermal expansion, Young… ▽ More We propose a model of the Peierls transition (PT) taking into account amplitude fluctuations of the charge-density waves and spontaneous thermally activated suppression of the Peierls gap, akin to the phase slip process. The activation results in the exponential growth of the normal phase with increasing temperature. The model fairly describes the behavior of resistance, thermal expansion, Young modulus and specific heat both below and above the PT temperature $T_P$. The PT appears to have a unique nature: it does not comprise $T_P$ as a parameter, and at the same time it has features of the 1st order transition. The possible basis for the model is activation of non-interacting amplitude solitons perturbing large volumes around them. △ Less

Submitted 19 January, 2004; originally announced January 2004.

Comments: 5 pages, 4 figures

Unconventional magnetoresistance in long InSb nanowires

Authors: S. V. Zaitsev-Zotov, Yu. A. Kumzerov, Yu. A. Firsov, P. Monceau

Abstract: Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1 - 1 mm) is studied over temperature range 2.3 - 300 K. At zero magnetic field the electric conduction $G$ and the current-voltage characteristics of such wires obey the power laws $G\propto T^α$, $I\propto V^β$, expected for one-dimensional electron systems… ▽ More Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1 - 1 mm) is studied over temperature range 2.3 - 300 K. At zero magnetic field the electric conduction $G$ and the current-voltage characteristics of such wires obey the power laws $G\propto T^α$, $I\propto V^β$, expected for one-dimensional electron systems. The effect of magnetic field corresponds to a 20% growth of the exponents $α$, $β$ at H=10 T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance. △ Less

Submitted 30 December, 2002; originally announced December 2002.

Comments: To be published in JETP Letters, vol. 77 (2003)

Luttinger-liquid-like behavior in bulk crystals of the quasi-one-dimensional conductor NbSe$_3$

Authors: S. V. Zaitsev-Zotov, M. S. H. Go, E. Slot, H. S. J. van der Zant

Abstract: CDW/Normal metal/CDW junctions and nanoconstrictions in crystals of the quasi-one-dimensional conductor NbSe$_3$ are manufactured using a focused-ion-beam. It is found that the low-temperature conduction of these structures changes dramatically and loses the features of the charge-density-wave transition. Instead, a dielectric phase is developed. Up to 6-order power-law variations of the conduct… ▽ More CDW/Normal metal/CDW junctions and nanoconstrictions in crystals of the quasi-one-dimensional conductor NbSe$_3$ are manufactured using a focused-ion-beam. It is found that the low-temperature conduction of these structures changes dramatically and loses the features of the charge-density-wave transition. Instead, a dielectric phase is developed. Up to 6-order power-law variations of the conduction as a function of both temperature and electric field can be observed for this new phase. The transition from quasi-one-dimensional behavior to one-dimensional behavior is associated with destruction of the three-dimensional order of the charge-density waves by fluctuations. It results in a recovery of the Luttinger-liquid properties of metallic chains, like it takes place in sliding Luttinger liquid phase. △ Less

Submitted 30 October, 2001; originally announced October 2001.

Comments: 5 pages, 5 figures, RevTeX 4, Presented at PLDS-3 (9-14 October, Chernogolovka, Russia), to be published in proceedings of PLDS-3, Physics of Low-Dimensional Strucutires

Negative Resistance and Local Charge-Density-Wave Dynamics

Authors: H. S. J. van der Zant, E. Slot, S. V. Zaitsev-Zotov, S. N. Artemenko

Abstract: Charge-density-wave dynamics is studied on a submicron length scale in NbSe_3 and o-TaS_3. Regions of negative absolute resistance are observed in the CDW sliding regime at sufficiently low temperatures. The origin of the negative resistance is attributed to the different forces that the deformed CDW and quasi-particles feel: the force on the CDW is merely caused by a difference of the electric… ▽ More Charge-density-wave dynamics is studied on a submicron length scale in NbSe_3 and o-TaS_3. Regions of negative absolute resistance are observed in the CDW sliding regime at sufficiently low temperatures. The origin of the negative resistance is attributed to the different forces that the deformed CDW and quasi-particles feel: the force on the CDW is merely caused by a difference of the electric potentials, while the quasi-particle current is governed by a difference of the electrochemical potentials. △ Less

Submitted 21 March, 2001; originally announced March 2001.

Comments: RevTeX, 4 pages with 3 figures, Submitted to PRL

Contributions of spontaneous phase slippage to linear and non-linear conduction near the Peierls transition in thin samples of o-TaS_3

Authors: V. Ya. Pokrovskii, S. V. Zaitsev-Zotov

Abstract: In the Peierls state very thin samples of TaS_3 (cross-section area \sim 10^{-3} mkm^2) are found to demonstrate smearing of the I-V curves near the threshold field. With approaching the Peierls transition temperature, T_P, the smearing evolves into smooth growth of conductance from zero voltage interpreted by us as the contribution of fluctuations to the non--linear conductance. We identify ind… ▽ More In the Peierls state very thin samples of TaS_3 (cross-section area \sim 10^{-3} mkm^2) are found to demonstrate smearing of the I-V curves near the threshold field. With approaching the Peierls transition temperature, T_P, the smearing evolves into smooth growth of conductance from zero voltage interpreted by us as the contribution of fluctuations to the non--linear conductance. We identify independently the fluctuation contribution to the linear conductance near T_P. Both linear and non-linear contributions depend on temperature with close activation energies \sim (2 - 4) x 10^3 K and apparently reveal the same process. We reject creep of the {\it continuous} charge-density waves (CDWs) as the origin of this effect and show that it is spontaneous phase slippage that results in creep of the CDW. A model is proposed accounting for both the linear and non-linear parts of the fluctuation conduction up to T_P. △ Less

Submitted 18 April, 2000; originally announced April 2000.

Comments: 6 pages, 5 Postscript figure, RevTeX, accepted for publication in PRB

Convective Term and Transversely Driven Charge-Density Waves

Authors: S. N. Artemenko, S. V. Zaitsev-Zotov, V. E. Minakova, P. Monceau

Abstract: We derive the convective terms in the damping which determine the structure of the moving charge-density wave (CDW), and study the effect of a current flowing transverse to conducting chains on the CDW dynamics along the chains. In contrast to a recent prediction we find that the effect is orders of magnitude smaller, and that contributions from transverse currents of electron- and hole-like qua… ▽ More We derive the convective terms in the damping which determine the structure of the moving charge-density wave (CDW), and study the effect of a current flowing transverse to conducting chains on the CDW dynamics along the chains. In contrast to a recent prediction we find that the effect is orders of magnitude smaller, and that contributions from transverse currents of electron- and hole-like quasiparticles to the force exerted on the CDW along the chains act in the opposite directions. We discuss recent experimental verification of the effect and demonstrate experimentally that geometry effects might mimic the transverse current effect. △ Less

Submitted 4 April, 2000; v1 submitted 1 November, 1999; originally announced October 1999.

Comments: RevTeX, 9 pages, 1 figure, accepted for publications in PRL

Luttinger-liquid-like transport in long InSb nanowires

Authors: S. V. Zaitsev-Zotov, Yu. A. Kumzerov, Yu. A. Firsov, P. Monceau

Abstract: Long nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter is around 50 Å, length 0.1 - 1 mm) were prepared. Electrical conduction of these nanowires is studied over a temperature range 1.5 - 350 K. It is found that a zero-field electrical conduction is a power function of the temperature $G\propto T^α$ with the typical exponent $α\approx 4$. Current-voltage characteristic… ▽ More Long nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter is around 50 Å, length 0.1 - 1 mm) were prepared. Electrical conduction of these nanowires is studied over a temperature range 1.5 - 350 K. It is found that a zero-field electrical conduction is a power function of the temperature $G\propto T^α$ with the typical exponent $α\approx 4$. Current-voltage characteristics of such nanowires are found to be nonlinear and at sufficiently low temperatures follows the power law $I\propto V^β$. It is shown that the electrical conduction of these nanowires cannot be accounted for in terms of ordinary single-electron theories and exhibits features expected for impure Luttinger liquid. For a simple approximation of impure LL as a pure one broken into drops by weak links, the estimated weak-link density is around $10^3-10^4$ per cm. △ Less

Submitted 6 July, 1999; v1 submitted 4 July, 1999; originally announced July 1999.

Comments: 5 pages, 2 figures

Impurity effect on low-temperature polarisation of the charge-density-waves in o-TaS$_3$

Authors: N. I. Baklanov, S. V. Zaitsev-Zotov, V. V. Frolov, P. Monceau

Abstract: The temperature dependence of the low-temperature dielectric response is studied in o-TaS$_3$ samples doped by Nb, Se, and Ni and for nominally pure ones. It is found, that the low-temperature dielectric constant depends anomalously on doping and is higher for doped crystals, whereas the temperature dependence of the characteristic time of all samples follows the activation law with nearly the s… ▽ More The temperature dependence of the low-temperature dielectric response is studied in o-TaS$_3$ samples doped by Nb, Se, and Ni and for nominally pure ones. It is found, that the low-temperature dielectric constant depends anomalously on doping and is higher for doped crystals, whereas the temperature dependence of the characteristic time of all samples follows the activation law with nearly the same activation energy $\sim 400$ K (T>20 K). The observed behaviour is inconsistent with all available explanations of the low-temperature dielectric anomaly. △ Less

Submitted 29 December, 1998; originally announced December 1998.

Comments: RevTex, 12 pages, epsf, 2 postscript Figures. Accepted for publication in Physics Letters A

Strong-Pinning Effects in Low-Temperature Creep: Charge-Density Waves in TaS_3

Authors: S. V. Zaitsev-Zotov, G. Remenyi, P. Monceau

Abstract: Nonlinear conduction in the quasi-one dimensional conductor o-TaS_3 has been studied in the low-temperature region down to 30 mK. It was found that at temperatures below a few Kelvins the current-voltage (I-V) characteristics consist of several branches. The temperature evolution of the I-V curve proceeds through sequential freezing-out of the branches. The origin of each branch is attributed to… ▽ More Nonlinear conduction in the quasi-one dimensional conductor o-TaS_3 has been studied in the low-temperature region down to 30 mK. It was found that at temperatures below a few Kelvins the current-voltage (I-V) characteristics consist of several branches. The temperature evolution of the I-V curve proceeds through sequential freezing-out of the branches. The origin of each branch is attributed to a particular strong pinning impurity type. Similar behavior is expected for other physical systems with collective transport (spin-density waves, Wigner crystals, vortex lattices in type-II superconductors etc.) in the presence of strong pinning centers. △ Less

Submitted 30 December, 1996; originally announced December 1996.

Comments: 11 pages, 3 ps figures, Revtex, To be published in Phys. Rev. Letters (1997)