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Engineering NV Centers via Hydrogen-Driven Defect Chemistry in CVD Diamonds for Quantum Applications: NVHx Dissociations into NV, Origin of 468nm Center, and Cause of Brown Coloration
Authors:
Mubashir Mansoor,
Kamil Czelej,
Sally Eaton-Magaña,
Mehya Mansoor,
Rümeysa Salci,
Maryam Mansoor,
Taryn Linzmeyer,
Yahya Sorkhe,
Kyaw S. Moe,
Ömer Özyildirim,
Kouki Kitajima,
Mehmet Ali Sarsil,
Taylan Erol,
Gökay Hamamci,
Onur Ergen,
Adnan Kurt,
Arya Andre Akhavan,
Zuhal Er,
Sergei Rubanov,
Nikolai M. Kazuchits,
Aisha Gokce,
Nick Davies,
Servet Timur,
Steven Prawer,
Alexander Zaitsev
, et al. (1 additional authors not shown)
Abstract:
Achieving high NV center conversion efficiency remains a key challenge in advancing diamond-based quantum technologies. The generally accepted mechanism for NV formation is that irradiation-induced vacancies become mobile during annealing and are trapped by substitutional nitrogen. However, the suggested mechanism does not consider the presence and role of hydrogen in the diamond and its influence…
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Achieving high NV center conversion efficiency remains a key challenge in advancing diamond-based quantum technologies. The generally accepted mechanism for NV formation is that irradiation-induced vacancies become mobile during annealing and are trapped by substitutional nitrogen. However, the suggested mechanism does not consider the presence and role of hydrogen in the diamond and its influence on the NV formation pathway. This is despite ab-initio calculations, which strongly suggest the formation of hydrogen-passivated NV centers during CVD diamond growth. Recent experimental observations showing a strong spatial correlation between NV centers, brown coloration, and the 468 nm luminescence center in as-grown CVD diamonds prompted us to investigate the atomistic origin of these phenomena in the presence of NxVHy-type complex defects. We used hybrid density functional theory DFT calculations and spectroscopic analysis of CVD diamonds grown with varying nitrogen content to investigate defect equilibria during growth. We identified the 468 nm center as the NVH- defect, a hydrogen-passivated NV center, and assigned the characteristic UV-VIS absorption bands at 270 360 and 520 nm to NxVHy complexes. Our findings reveal that hydrogen plays a central role in stabilizing these defects during growth. We further showed that NVHx complex defects dissociate into NV centers and interstitial hydrogen during post-growth irradiation and annealing, complementing vacancy trapping by substitutional nitrogen. These results provide a unified picture of the defect chemistry underlying brown coloration, 468 nm center, and NV formation in CVD diamonds, offering new insights for optimizing diamond synthesis and processing for quantum applications by taking advantage of hydrogens role and dissociation of NVHx complexes.
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Submitted 30 June, 2025;
originally announced July 2025.
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Magnetic-Field-Dependent Stimulated Emission from Nitrogen-Vacancy Centres in Diamond
Authors:
F. Hahl,
L. Lindner,
X. Vidal,
T. Ohshima,
S. Onoda,
S. Ishii,
A. M. Zaitsev,
M. Capelli,
T. Luo,
B. C. Gibson,
A. D. Greentree,
J. Jeske
Abstract:
Negatively charged nitrogen-vacancy centres in diamond are promising quantum magnetic field sensors. Laser threshold magnetometry has been a theoretical approach for the improvement of NV-centre ensemble sensitivity via increased signal strength and magnetic field contrast. In this work we experimentally demonstrate laser threshold magnetometry. We use a macroscopic high-finesse laser cavity conta…
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Negatively charged nitrogen-vacancy centres in diamond are promising quantum magnetic field sensors. Laser threshold magnetometry has been a theoretical approach for the improvement of NV-centre ensemble sensitivity via increased signal strength and magnetic field contrast. In this work we experimentally demonstrate laser threshold magnetometry. We use a macroscopic high-finesse laser cavity containing a highly NV-doped and low absorbing diamond gain medium that is pumped at 532nm and resonantly seeded at 710nm. This enables amplification of the signal power by stimulated emission of 64%. We show the magnetic-field dependency of the amplification and thus, demonstrate magnetic-field dependent stimulated emission from an NV-centre ensemble. This emission shows a record contrast of 33% and a maximum output power in the mW regime. These advantages of coherent read-out of NV-centres pave the way for novel cavity and laser applications of quantum defects as well as diamond NV magnetic field sensors with significantly improved sensitivity for the health, research and mining sectors.
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Submitted 10 September, 2021;
originally announced September 2021.
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Anomalous pressure dependence of the electronic transport and anisotropy in SrIrO3 films
Authors:
A. G. Zaitsev,
A. Beck,
A. K. Jaiswal,
R. Singh,
R. Schneider,
M. Le Tacon,
D. Fuchs
Abstract:
Iridate oxides display exotic physical properties that arise from the interplay between a large spin-orbit coupling and electron correlations. Here, we present a comprehensive study of the effects of hydrostatic pressure on the electronic transport properties of SrIrO3 (SIO), a system that has recently attracted a lot of attention as potential correlated Dirac semimetal. Our investigations on untw…
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Iridate oxides display exotic physical properties that arise from the interplay between a large spin-orbit coupling and electron correlations. Here, we present a comprehensive study of the effects of hydrostatic pressure on the electronic transport properties of SrIrO3 (SIO), a system that has recently attracted a lot of attention as potential correlated Dirac semimetal. Our investigations on untwinned thin films of SIO reveal that the electrical resistivity of this material is intrinsically anisotropic and controlled by the orthorhombic distortion of the perovskite unit cell. These effects provide another evidence for the strong coupling between the electronic and lattice degrees of freedom in this class of compounds. Upon increasing pressure, a systematic increase of the transport anisotropies is observed. The anomalous pressure-induced changes of the resistivity cannot be accounted for by the pressure dependence of the density of the electron charge carriers, as inferred from Hall effect measurements. Moreover, pressure-induced rotations of the IrO6 octahedra likely occur within the distorted perovskite unit cell and affect electron mobility of this system.
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Submitted 20 April, 2020;
originally announced April 2020.
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Magnetotransport of SrIrO3 films on (110) DyScO3
Authors:
A. K. Jaiswal,
A. G. Zaitsev,
R. Singh,
R. Schneider,
D. Fuchs
Abstract:
Epitaxial perovskite (110) oriented SrIrO3 (SIO) thin films were grown by pulsed laser deposition on (110) oriented DyScO3 (DSO) substrates with various film thickness t (2 nm < t < 50 nm). All the films were produced with stoichiometric composition, orthorhombic phase, and with high crystallinity. The nearly perfect in-plane lattice matching of DSO with respect to SIO and same symmetry result in…
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Epitaxial perovskite (110) oriented SrIrO3 (SIO) thin films were grown by pulsed laser deposition on (110) oriented DyScO3 (DSO) substrates with various film thickness t (2 nm < t < 50 nm). All the films were produced with stoichiometric composition, orthorhombic phase, and with high crystallinity. The nearly perfect in-plane lattice matching of DSO with respect to SIO and same symmetry result in a full epitaxial inplane alignment, i.e., the c-axis of DSO and SIO are parallel to each other with only slightly enlarged d110 out-of-plane lattice spacing (+0.38%) due to the small in-plane compressive strain caused by the DSO substrate. Measurements of the magnetoresistance MR were carried out for current flow along the [001] and [1-10] direction of SIO and magnetic field perpendicular to the film plane. MR appears to be distinctly different for both directions. The anisotropy MR001/MR1-10 > 1 increases with decreasing T and is especially pronounced for the thinnest films, which likewise display a hysteretic field dependence below T* ~ 3 K. The coercive field Hc amounts to 2-5 T. Both, T* and Hc are very similar to the magnetic ordering temperature and coercivity of DSO which strongly suggests substrate-induced mechanism as a reason for the anisotropic magnetotransport in the SIO films.
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Submitted 2 January, 2020;
originally announced January 2020.
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High temperature annealing enhanced diamond 13C hyperpolarization at room temperature
Authors:
M. Gierth,
V. Krespach,
A. I. Shames,
P. Raghavan,
E. Druga,
N. Nunn,
M. Torelli,
R. Nirodi,
S. Le,
R. Zhao,
A. Aguilar,
X. Lv,
M. Shen,
C. A. Meriles,
J. A. Reimer,
A. Zaitsev,
A. Pines,
O. Shenderova,
A. Ajoy
Abstract:
Methods of optical dynamic nuclear polarization (DNP) open the door to the replenishable hyperpolarization of nuclear spins, boosting their NMR/MRI signature by orders of magnitude. Nanodiamond powder rich in negatively charged Nitrogen Vacancy (NV) defect centers has recently emerged as one such promising platform, wherein 13C nuclei can be hyperpolarized through the optically pumped defects comp…
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Methods of optical dynamic nuclear polarization (DNP) open the door to the replenishable hyperpolarization of nuclear spins, boosting their NMR/MRI signature by orders of magnitude. Nanodiamond powder rich in negatively charged Nitrogen Vacancy (NV) defect centers has recently emerged as one such promising platform, wherein 13C nuclei can be hyperpolarized through the optically pumped defects completely at room temperature and at low magnetic fields. Given the compelling possibility of relaying this 13C polarization to nuclei in external liquids, there is an urgent need for the engineered production of highly "hyperpolarizable" diamond particles. In this paper, we report on a systematic study of various material dimensions affecting optical 13C hyperpolarization in diamond particles -- especially electron irradiation and annealing conditions that drive NV center formation. We discover surprisingly that diamond annealing at elevated temperatures close to 1720C have remarkable effects on the hyperpolarization levels, enhancing them by upto 36-fold over materials annealed through conventional means. We unravel the intriguing material origins of these gains, and demonstrate they arise from a simultaneous improvement in NV electron relaxation time and coherence time, as well as the reduction of paramagnetic content, and an increase in 13C relaxation lifetimes. Overall this points to significant recovery of the diamond lattice from radiation damage as a result of the high-temperature annealing. Our work suggests methods for the guided materials production of fluorescent, 13C hyperpolarized, nanodiamonds and pathways for their use as multi-modal (optical and MRI) imaging and hyperpolarization agents.
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Submitted 8 November, 2019;
originally announced November 2019.
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Incommensurately modulated twin structure of nyerereite Na1.64K0.36Ca(CO3)2
Authors:
Nadezhda B. Bolotina,
Pavel N. Gavryushkin,
Andrey V. Korsakov,
Sergey V. Rashchenko,
Yurii V. Seryotkin,
Alexander V. Golovin,
Bertrand N. Moine,
Anatoly N. Zaitsev,
Konstantin D. Litasov
Abstract:
Incommensurately modulated twin structure of nyerereite Na1.64K0.36Ca(CO3)2 has been first determined in the (3+1)D symmetry group Cmcm(α00)00s with modulation vector q = 0.383a*. Unit-cell values are a = 5.062(1), b = 8.790(1), c = 12.744(1) Å. Three orthorhombic components are related by threefold rotation about [001]. Discontinuous crenel functions are used to describe occupation modulation of…
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Incommensurately modulated twin structure of nyerereite Na1.64K0.36Ca(CO3)2 has been first determined in the (3+1)D symmetry group Cmcm(α00)00s with modulation vector q = 0.383a*. Unit-cell values are a = 5.062(1), b = 8.790(1), c = 12.744(1) Å. Three orthorhombic components are related by threefold rotation about [001]. Discontinuous crenel functions are used to describe occupation modulation of Ca and some CO3 groups. Strong displacive modulation of the oxygen atoms in vertexes of such CO3 groups is described using x-harmonics in crenel intervals. The Na, K atoms occupy mixed sites whose occupation modulation is described by two ways using either complementary harmonic functions or crenels. The nyerereite structure has been compared both with commensurately modulated structure of K-free Na2Ca(CO3)2 and with widely known incommensurately modulated structure of γ-Na2CO3.
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Submitted 9 January, 2017;
originally announced January 2017.
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Ion Irradiation of Nanocrystalline Graphene on Quartz and Sapphire
Authors:
Maria Edera,
Alexander M. Zaitsev
Abstract:
The effects of Ga+ ion irradiation and high temperature annealing on behavior of nanocrystalline graphene directly grown on quartz and sapphire are presented. It is shown that nanocrystalline graphene stands fairly high doses of ion irradiation (up to 3e14 cm-2 of 5 to 50 keV Ga+ ions) without degradation in conductance. At higher doses, nanocrystalline graphene rapidly loses its conductance and a…
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The effects of Ga+ ion irradiation and high temperature annealing on behavior of nanocrystalline graphene directly grown on quartz and sapphire are presented. It is shown that nanocrystalline graphene stands fairly high doses of ion irradiation (up to 3e14 cm-2 of 5 to 50 keV Ga+ ions) without degradation in conductance. At higher doses, nanocrystalline graphene rapidly loses its conductance and at doses over 2e15 cm-2 becomes actually insulating. Annealing in vacuum restores conductance of the irradiated nanocrystalline graphene and, if the irradiation has not exceeded a dose of 3e15 cm-2, this restoration can be complete. Ion irradiation at high doses approaching 1e16 cm-2 results in complete ion sputtering of a few layer graphene. Along with the irradiation-induced reduction of conductance and the temperature-induced restoration of conductance, two other effects of the ion irradiation are the enhancement of adhesion of graphene to substrate and the increase in the nucleation capability of substrate for direct deposition of graphene. For 50 keV Ga+ ions, the enhancement of adhesion is observed at irradiation doses over 2e14 cm-2. The promoted graphene nucleation is observed in a broad dose range. It is shown that the above effects can be used for development of methods of patterning of graphene on insulating substrates and a method of imprint lithography of graphene.
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Submitted 19 February, 2015;
originally announced February 2015.
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Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs
Authors:
D. A. Zaitsev,
N. D. Ilinskaya,
A. V. Koudinov,
N. K. Poletaev,
A. Yu. Egorov,
A. V. Kavokin,
R. P. Seisyan
Abstract:
Comparative studies of the resonant transmission of light in the vicinity of exciton resonances, measured for 15 few-micron GaAs crystal slabs with different impurity concentrations $N$, reveal an unexpected tendency. While $N$ spans almost five decimal orders of magnitude, the normalized spectrally-integrated absorption of light scales with the impurity concentration as $N^{1/6}$. We show analyti…
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Comparative studies of the resonant transmission of light in the vicinity of exciton resonances, measured for 15 few-micron GaAs crystal slabs with different impurity concentrations $N$, reveal an unexpected tendency. While $N$ spans almost five decimal orders of magnitude, the normalized spectrally-integrated absorption of light scales with the impurity concentration as $N^{1/6}$. We show analytically that this dependence is a signature of the diffusive mechanism of propagation of exciton-polaritons in the semiconductor.
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Submitted 12 January, 2015;
originally announced January 2015.
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Proximity effect and electron transport in the oxide hybrid heterostructures with superconducting/magnetic interfaces
Authors:
G. A. Ovsyannikov,
K. Y. Constantinian,
Yu. V. Kislinski,
A. V. Shadrin,
A. V. Zaitsev,
V. V. Demidov,
I. V. Borisenko,
A. V. Kalabukhov,
D. Winkler
Abstract:
We report on the study of electron transport in the oxide heterostructures with superconductor/magnetic matter (S/M) interfaces where anomaly large penetration of superconducting correlations in magnetic matter (proximity effect) is realized. The developed theoretical model based on multilayer magnetic structure of M-interlayer and experiment show presence of the long-range proximity effect at S…
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We report on the study of electron transport in the oxide heterostructures with superconductor/magnetic matter (S/M) interfaces where anomaly large penetration of superconducting correlations in magnetic matter (proximity effect) is realized. The developed theoretical model based on multilayer magnetic structure of M-interlayer and experiment show presence of the long-range proximity effect at S/M-interface with antiferromagnetic (AF) ordering of the interlayer magnetization. The investigated hybrid heterostructures include cuprate superconductor, the AF-cuprate interlayer and conventional superconductor, Nb. The superconducting critical current with density 1-10A/cm2 and the characteristic voltage, 0.1-0.2 mV, are observed at liquid helium temperature for 15-50 nm thick M-interlayer made of AF film CaSrCuO. These heterostructures demonstrate deviation from sin-type superconducting current-phase relation and had the critical current of the second harmonic of 10-20% of the first harmonic one. The hybrid heterostructures with S/AF interface show high sensitivity to the external magnetic field that is possibly caused by the influence of an external magnetic field on the canting of magnetic moments of individual layers of AF -interlayer. Substituting the AF cuprate by a manganite film, no critical current was observed, although the M- interlayer was made very thin, down to 5 nm.
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Submitted 6 January, 2010;
originally announced January 2010.
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Anomalous Superconducting Proximity Effect in Hybrid Oxide Heterostructures with Antiferromagnetic Layer
Authors:
G. A. Ovsyannikov,
P. Komissinskiy,
I. V. Borisenko,
Yu. V. Kislinskii,
A. V. Zaitsev,
K. Y. Constantinian,
D. Winkler
Abstract:
We report an investigation of current transport in Nb/Au/CaSrCuO/YBaCuO heterostructures including an antiferromagnetic interlayer (CaSrCuO). Epitaxial thin films of YBaCuO and CaSrCuO were grown by laser ablation on NdGaO substrates; the thicknesses of CaSrCuO films were 20 and 50 nm, and x=0.15 or 0.5. Our experimental results show that the superconducting current transport is increased in the…
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We report an investigation of current transport in Nb/Au/CaSrCuO/YBaCuO heterostructures including an antiferromagnetic interlayer (CaSrCuO). Epitaxial thin films of YBaCuO and CaSrCuO were grown by laser ablation on NdGaO substrates; the thicknesses of CaSrCuO films were 20 and 50 nm, and x=0.15 or 0.5. Our experimental results show that the superconducting current transport is increased in the Nb/Au/CaSrCuO/YBaCuO heterostructures in comparison with the ones observed in previously studied Nb/Au/YBaCuO heterostructures. It was found that the critical current of the structure is very sensitive to the absolute value and direction of the external magnetic field.
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Submitted 5 October, 2006;
originally announced October 2006.
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Market Mill Dependence Pattern in the Stock Market: Distribution Geometry, Moments and Gaussization
Authors:
Andrei Leonidov,
Vladimir Trainin,
Alexander Zaitsev,
Sergey Zaitsev
Abstract:
This paper continues a series of studies devoted to analysis of the bivariate probability distribution P(x,y) of two consecutive price increments x (push) and y (response) at intraday timescales for a group of stocks. Besides the asymmetry properties of P(x,y) such as Market Mill dependence patterns described in preceding paper [1], there are quite a few other interesting geometrical properties…
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This paper continues a series of studies devoted to analysis of the bivariate probability distribution P(x,y) of two consecutive price increments x (push) and y (response) at intraday timescales for a group of stocks. Besides the asymmetry properties of P(x,y) such as Market Mill dependence patterns described in preceding paper [1], there are quite a few other interesting geometrical properties of this distribution discussed in the present paper, e.g. transformation of the shape of equiprobability lines upon growing distance from the origin of xy plane and approximate invariance of P(x,y) with respect to rotations at the multiples of $π/2$ around the origin of xy plane. The conditional probability distribution of response P(y|x) is found to be markedly non-gaussian at small magnitude of pushes and tending to more gauss-like behavior upon growing push magnitude. The volatility of P(y|,x) measured by the absolute value of the response shows linear dependence on the absolute value of the push, and the skewness of P(y|x) is shown to inherit a sign of the push. The conditional dynamics approach applied in this study is compared to regression models of AR-ARCH class.
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Submitted 13 March, 2006;
originally announced March 2006.
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Josephson effect in superconducting constrictions with hybrid SF electrodes: peculiar properties determined by the misorientation of magnetizations
Authors:
A. V. Zaitsev
Abstract:
Josephson current in SFcFS junctions with arbitrary transparency of the constriction (c) is investigated. The emphasis is done on the analysis of the supercurrent dependencies on the misorientation angle $θ$ between the in-plane magnetizations of diffusive ferromagnetic layers (F). It is found that the current-phase relation $I(φ)$ may be radically modified with the $θ$ variation: the harmonic…
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Josephson current in SFcFS junctions with arbitrary transparency of the constriction (c) is investigated. The emphasis is done on the analysis of the supercurrent dependencies on the misorientation angle $θ$ between the in-plane magnetizations of diffusive ferromagnetic layers (F). It is found that the current-phase relation $I(φ)$ may be radically modified with the $θ$ variation: the harmonic $I_{1}\sin φ$ vanishes for definite value of $θ$ provided for identical orientation of the magnetizations ($θ=0$) the junction is in the $"π"$ state. The Josephson current may exhibit a nonmonotonic dependence on the misorientation angle both for realization of $"0 "$ and $"π"$ state at $θ=0$. We also analyze the effect of exchange field induced enhancement of the critical current which may occur in definite range of $θ$.
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Submitted 20 February, 2006;
originally announced February 2006.
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Market Mill Dependence Pattern in the Stock Market: Asymmetry Structure, Nonlinear Correlations and Predictability
Authors:
Andrei Leonidov,
Vladimir Trainin,
Alexander Zaitsev,
Sergey Zaitsev
Abstract:
An empirical study of joint bivariate probability distribution of two consecutive price increments for a set of stocks at time scales ranging from one minute to thirty minutes reveals asymmetric structures with respect to the axes y=0, y=x, x=0 and y=-x. All four asymmetry patterns remarkably resemble a four-blade mill called market mill pattern. The four market mill patterns characterize differ…
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An empirical study of joint bivariate probability distribution of two consecutive price increments for a set of stocks at time scales ranging from one minute to thirty minutes reveals asymmetric structures with respect to the axes y=0, y=x, x=0 and y=-x. All four asymmetry patterns remarkably resemble a four-blade mill called market mill pattern. The four market mill patterns characterize different aspects of interdependence between past (push) and future (response) price increments. When analyzed in appropriate coordinates, each pattern corresponds to a particular nonlinear dependence between the push and conditional mean of response. Qualitative interpretation of each pattern is discussed. The market mill pattern is an evidence of complex dependence properties relating past and future price increments resulting in various types of nonlinear correlation and predictability.
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Submitted 18 January, 2006; v1 submitted 13 January, 2006;
originally announced January 2006.
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Anomalous behaviour of S/N mesoscopic structures near T_c
Authors:
S. Shapira,
E. H. Linfield,
C. J. Lambert,
R. Seviour,
A. F. Volkov,
A. V. Zaitsev
Abstract:
We observe a maximum in the conductance of Aluminum / n-GaAs junctions at temperatures 20 mK lower than the superconducting transition temperature. This is the first observation of a non- monotonic behavior of the conductance near the superconducting transition in superconducting normal junctions. To accommodate this effect we calculate the full temperature dependence of the conductance of these…
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We observe a maximum in the conductance of Aluminum / n-GaAs junctions at temperatures 20 mK lower than the superconducting transition temperature. This is the first observation of a non- monotonic behavior of the conductance near the superconducting transition in superconducting normal junctions. To accommodate this effect we calculate the full temperature dependence of the conductance of these structures, invoking quasiclassical Green's functions in the diffusive limit. In addition to the well-known low temperature peak at temperatures on the order of the Thouless energy, we find a maximum near the critical temperature. This peak has the same origin as the subgap conductance observed in superconducting-normal junctions at low temperatures. Its calculated magnitude and position are in good agreement with our experimental observation.
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Submitted 4 November, 1999; v1 submitted 24 June, 1999;
originally announced June 1999.
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Phase-coherent tunneling through mesoscopic superconductor coupled with superconducting and normal metal electrodes
Authors:
A. V. Zaitsev,
A. F. Volkov,
S. W. D. Bailey,
C. J. Lambert
Abstract:
Phase-coherent diffusive transport through mesoscopic hybrid superconductor/normal metal tunneling structures is investigated. For a N-s-S two-barrier tunneling system with bulk S and N electrodes coupled by a mesoscopic superconducting constriction s, zero-bias conductance and non-linear I-V curves are calculated under the assumption that the dwell times of quasiparticles in the s region is sho…
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Phase-coherent diffusive transport through mesoscopic hybrid superconductor/normal metal tunneling structures is investigated. For a N-s-S two-barrier tunneling system with bulk S and N electrodes coupled by a mesoscopic superconducting constriction s, zero-bias conductance and non-linear I-V curves are calculated under the assumption that the dwell times of quasiparticles in the s region is shorter than inelastic relaxation time. It is shown that the low voltage conductance of this system determined by the Andreev reflection processes may exceed the conductance in the normal state and its value is very sensitive to the weak pairing interaction of electrons in the s region. We show that even weak pairing electron interaction may result in the significant qualitative and quantitative change of the conductance temperature dependence with respect to the case of structures with the normal mesoscopic region. We calculate the I-V curves and show that they depend on the applied voltage in a non-monotonic way, therefore differential conductance becomes negative with increasing voltage. Such behavior is due to the voltage dependence of the order parameter in the constriction and the phase difference, phi, between the S and s superconductors. It is shown that if the tunneling processes determine the form of the quasiparticle distribution function in the s superconductor, the phase, phi, is stationary at arbitrary voltages. For quasiparticle tunneling interferometers in which the mesoscopic superconductor,s, couples the superconductor,S, and the normal metal,N, the zero bias conductance, as a function of the phase difference between the S electrodes is investigated. It is shown that the amplitude of the conductance oscillations may exceed the conductance of this structure in the normal state.
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Submitted 14 May, 1999;
originally announced May 1999.
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Theory of AC Josepson Effect in Superconducting Constrictions
Authors:
A. V. Zaitsev,
D. V. Averin
Abstract:
We have developed a microscopic theory of ac Josephson effect in short ballistic superconducting constrictions with arbitrary electron transparency and in constrictions with diffusive electron transport. The theory is valid for arbitrary miscroscopic structure of the superconducting electrodes of the constriction. As applications of the theory we study smearing of the subgap current singularitie…
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We have developed a microscopic theory of ac Josephson effect in short ballistic superconducting constrictions with arbitrary electron transparency and in constrictions with diffusive electron transport. The theory is valid for arbitrary miscroscopic structure of the superconducting electrodes of the constriction. As applications of the theory we study smearing of the subgap current singularities by pair-breaking effects and also the structure of these singularities in the constrictions between the composite S/N electrodes with the proximity-induced gap in the normal layer.
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Submitted 25 August, 1997;
originally announced August 1997.
