Showing 1–2 of 2 results for author: Zabrodskii, A
-
Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance
Authors:
A. I. Veinger,
A. G. Zabrodskii,
T. V. Tisnek,
S. I. Goloshchapov,
P. V. Semenikhin
Abstract:
Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic doped germanium samples at a rather high concentration corres…
▽ More
Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic doped germanium samples at a rather high concentration corresponding to the insulator metal phase transition.
△ Less
Submitted 25 January, 2013;
originally announced January 2013.
-
Model of hopping dc conductivity via nearest neighbor boron atoms in moderately compensated diamond crystals
Authors:
N. A. Poklonski,
S. A. Vyrko,
A. G. Zabrodskii
Abstract:
Expressions for dependences of the pre-exponential factor σ_3 and the thermal activation energy ε_3 of hopping electric conductivity of holes via boron atoms on the boron atom concentration N and the compensation ratio K are obtained in the quasiclassical approximation. It is assumed that the acceptors (boron atoms) in charge states (0) and (-1) and the donors that compensate them in the charge st…
▽ More
Expressions for dependences of the pre-exponential factor σ_3 and the thermal activation energy ε_3 of hopping electric conductivity of holes via boron atoms on the boron atom concentration N and the compensation ratio K are obtained in the quasiclassical approximation. It is assumed that the acceptors (boron atoms) in charge states (0) and (-1) and the donors that compensate them in the charge state (+1) form a nonstoichiometric simple cubic lattice with translational period R_h = [(1 + K)N]^{-1/3} within the crystalline matrix. A hopping event occurs only over the distance R_h at a thermally activated accidental coincidence of the acceptor levels in charge states (0) and (-1). Donors block the fraction K/(1 - K) of impurity lattice sites. The hole hopping conductivity is averaged over all possible orientations of the lattice with respect to the external electric field direction. It is supposed that an acceptor band is formed by Gaussian fluctuations of the potential energy of boron atoms in charge state (-1) due to Coulomb interaction only between the ions at distance R_h. The shift of the acceptor band towards the top of the valence band with increasing N due to screening (in the Debye--Hückel approximation) of the impurity ions by holes hopping via acceptor states was taken into account. The calculated values of σ_3(N) and ε_3(N) for K \approx 0.25 agree well with known experimental data at the insulator side of the insulator--metal phase transition. The calculation is carried out at a temperature two times lower than the transition temperature from hole transport in v-band of diamond to hopping conductance via boron atoms.
△ Less
Submitted 5 September, 2011; v1 submitted 1 May, 2010;
originally announced May 2010.
