Structural origin of the Jeff=1/2 antiferromagnetic phase in Ga-doped Sr2IrO4
Authors:
H. W. Wang,
L. Y. Zhang,
N. Hu,
B. You,
Y. T. Chang,
S. L. Yuan,
C. L. Lu,
J. M. Liu
Abstract:
Sr2IrO4 hosts a novel Jeff =1/2 Mott state and quasi-two-dimensional antiferromagnetic order, providing a unique avenue of exploring emergent states of matter and functions that are extraordinarily sensitive to any structural variations. While the correlation between the physical property and lattice structure in Sr2IrO4 has been a focused issue in the past decade, a common perception assumes that…
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Sr2IrO4 hosts a novel Jeff =1/2 Mott state and quasi-two-dimensional antiferromagnetic order, providing a unique avenue of exploring emergent states of matter and functions that are extraordinarily sensitive to any structural variations. While the correlation between the physical property and lattice structure in Sr2IrO4 has been a focused issue in the past decade, a common perception assumes that the magnetic ordering is essentially determined by the Ir-O-Ir bond angle. Therefore, a delicate modulation of this angle and consequently a major modulation of the magnetic ordering, by chemical doping such as Ga at Ir site, has been extensively investigated and well believed. In this work, however, we present a whole package of structure and magnetism data on a series of single crystal and polycrystalline Sr2Ir1-xGaxO4 samples, revealing the substantial difference in the Néel temperature TN between the two types of samples, and the TN value for the polycrystalline sample x = 0.09 is even 64 K higher than that of the single crystal sample x = 0.09 (deltaTN ~ 64 K at x = 0.09). Our systematic investigations demonstrate the crucial role of the c/a ratio in tuning the interlayer coupling and thereby the Neel point TN, i.e. a higher TN can be achieved as c/a is reduced. The notable differences in structural parameters between the two groups of samples are probably caused by additional strain due to the massive grain boundaries in polycrystalline samples. The present work suggests an additional ingredient of physics that is essential in modulating the emergent properties in Sr2IrO4 and probably other iridates.
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Submitted 16 September, 2023;
originally announced September 2023.
Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4
Authors:
Haowen Wang,
Chengliang Lu,
Jun Chen,
Yong Liu,
S. L. Yuan,
Sang-Wook Cheong,
Shuai Dong,
Jun-Ming Liu
Abstract:
Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has been realized by various means, applicably appreciated functionalities on the readout side of AFM-based devices are urgently desired. Here, we report the remarkab…
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Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has been realized by various means, applicably appreciated functionalities on the readout side of AFM-based devices are urgently desired. Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) as giant as ~ 160% in a simple resistor structure made of AFM Sr2IrO4 without auxiliary reference layer. The underlying mechanism for the giant AMR is an indispensable combination of atomic scale giant-MR-like effect and magnetocrystalline anisotropy energy, which was not accessed earlier. Furthermore, we demonstrate the bistable nonvolatile memory states that can be switched in-situ without the inconvenient heat-assisted procedure, and robustly preserved even at zero magnetic field, due to the modified interlayer coupling by 1% Ga-doping in Sr2IrO4. These findings represent a straightforward step toward the AFM spintronic devices.
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Submitted 9 June, 2019;
originally announced June 2019.
