Showing 1–30 of 30 results for author: Yuan, M

Engineering Quantum Wire States for Atom Scale Circuitry

Authors: Max Yuan, Lucian Livadaru, Roshan Achal, Jason Pitters, Furkan Altincicek, Robert Wolkow

Abstract: Recent advances in hydrogen lithography on silicon surfaces now enable the fabrication of complex and error-free atom-scale circuitry. The structure of atomic wires, the most basic and common circuit elements, plays a crucial role at this scale, as the exact position of each atom matters. As such, the characterization of atomic wire geometries is critical for identifying the most effective configu… ▽ More Recent advances in hydrogen lithography on silicon surfaces now enable the fabrication of complex and error-free atom-scale circuitry. The structure of atomic wires, the most basic and common circuit elements, plays a crucial role at this scale, as the exact position of each atom matters. As such, the characterization of atomic wire geometries is critical for identifying the most effective configurations. In this study, we employed low-temperature (4.5 K) scanning tunneling microscopy (STM) and spectroscopy (STS) to systematically fabricate and characterize six planar wire configurations made up of silicon dangling bonds (DBs) on the H-Si(100) surface. Crucially, the characterization was performed at the same location and under identical tip conditions, thereby eliminating artifacts due to the local environment to reveal true electronic differences among the line configurations. By performing dI/dV line spectroscopy on each wire, we reveal their local density of states (LDOS) and demonstrate how small variations in wire geometry affect orbital hybridization and induce the emergence of new electronic states. Complementarily, we deploy density functional theory (DFT) and non-equilibrium Green's functions to compute the LDOS and evaluate transmission coefficients for the most promising wire geometries. Our results indicate that dimer and wider wires exhibit multiple discrete mid-gap electronic states which could be exploited for signal transport or as custom quantum dots. Furthermore, wider wires benefit from additional current pathways and exhibit increased transmission, while also demonstrating enhanced immunity to hydrogen defects. △ Less

Submitted 2 July, 2025; originally announced July 2025.

Comments: Article: 18 pages, 6 figures, and 1 table. Supplementary information: 9 pages, and 14 SI figures

Identifying vortex lattice in type-II superconductors via the dynamic magnetostrictive effect

Authors: Peipei Lu, Mengju Yuan, Jing Zhang, Qiang Gao, Shuang Liu, Yugang Zhang, Shipeng Shen, Long Zhang, Jun Lu, Xiaoyuan Zhou, Mingquan He, Aifeng Wang, Yang Li, Wenshan Hong, Shiliang Li, Huiqian Luo, Xingjiang Zhou, Xianhui Chen, Young Sun, Yisheng Chai

Abstract: In type-I superconductors, zero electrical resistivity and perfect diamagnetism define two fundamental criteria for superconducting behavior. In contrast, type-II superconductors exhibit more complex mixed-state physics, where magnetic flux penetrates the material above the lower critical field Hc1 in the form of quantized vortices, each carrying a single flux quantum. These vortices form a two-di… ▽ More In type-I superconductors, zero electrical resistivity and perfect diamagnetism define two fundamental criteria for superconducting behavior. In contrast, type-II superconductors exhibit more complex mixed-state physics, where magnetic flux penetrates the material above the lower critical field Hc1 in the form of quantized vortices, each carrying a single flux quantum. These vortices form a two-dimensional lattice which persists up to another irreversible field (Hirr) and then melts into a dissipative liquid phase. The vortex lattice is fundamental to the magnetic and electrical properties of type-II superconductors, a third definitive criterion-beyond resistivity and magnetization-for identifying this phase has remained elusive. Here, we report the discovery of a dynamic magnetostrictive effect, wherein the geometry of the superconductor oscillates only under an applied alternating magnetic field due to the disturbance of the vortex lattice. This effect is detected by a thin piezoelectric transducer, which converts the excited geometric deformation into an in-phase ac voltage. Notably, we find a direct and nearly linear relationship between the signal amplitude and the vortex density in lattice across several representative type-II superconductors. In the vortex liquid phase above Hirr, the signal amplitude rapidly decays to zero near the upper critical field (Hc2), accompanied by a pronounced out-of-phase component due to enhanced dissipation. This dynamic magnetostrictive effect not only reveals an unexplored magnetoelastic property of the vortex lattice but also establishes a fundamental criterion for identifying the type-II superconductors. △ Less

Submitted 10 June, 2025; originally announced June 2025.

Comments: 27 pages, 8 figures, submitted

Structural Control of Atomic Silicon Wires

Authors: Furkan M. Altincicek, Christopher C. Leon, Lucian Livadaru, Taras Chutora, Max Yuan, Roshan Achal, Jason Pitters, Robert Wolkow

Abstract: Bare Si(100)-2$\times$1 surface atoms exhibit a buckled structure where one Si atom in a dimer is lowered while the other is raised, leading to two possible buckling configurations equivalent in energy. The relatively low energy barrier between these configurations allows dimers to flip rapidly and uncontrollably unless stabilized by surface defects or observed at low temperatures due to reduced t… ▽ More Bare Si(100)-2$\times$1 surface atoms exhibit a buckled structure where one Si atom in a dimer is lowered while the other is raised, leading to two possible buckling configurations equivalent in energy. The relatively low energy barrier between these configurations allows dimers to flip rapidly and uncontrollably unless stabilized by surface defects or observed at low temperatures due to reduced thermal energy using Scanning Tunneling Microscopy (STM). This rapid flipping results in a time-averaged symmetric appearance under STM. In this study, we investigated variable length buckled dimer wires on the hydrogenated Si(100) surface composed of silicon dangling bonds for the first time. We demonstrate that on degenerate p-type silicon at 4.5 K, the rapid switching of these dimers can be frozen at low scanning biases. Such buckled wires can however be controllably flipped using a bias pulse. A line as long as 37 dimers was repeatedly uniformly flipped by a single pulse delivered near one terminus of the wire. The tip-directed flipping of a particular wire does not switch adjacent wires, suggesting binary wires can make well isolated rewritable binary memory elements. Furthermore, at sufficiently high biases switching generates telegraph noise that could be of utility for random number generation. The integration and encapsulation of these wires with previously described silicon dangling bond-made logic gates and binary wires might allow for self contained actuation and readout without requiring any role of an STM tip. △ Less

Submitted 27 June, 2025; v1 submitted 10 April, 2025; originally announced April 2025.

Comments: 25 pages, 10 figures

From Weyl Anomaly to Defect Supersymmetric Rényi Entropy and Casimir Energy

Authors: Zi-Xiao Huang, Ma-Ke Yuan, Yang Zhou

Abstract: We present a closed-form expression for the contribution of surface defects to the supersymmetric Rényi entropy in six-dimensional $(2,0)$ theories. Our results show that this defect contribution is a linear function of $1/n$ and is directly proportional to $2b-d_2$, where $b$ and $d_2$ are the surface defect Weyl anomaly coefficients. We also derive a closed-form expression for the defect contrib… ▽ More We present a closed-form expression for the contribution of surface defects to the supersymmetric Rényi entropy in six-dimensional $(2,0)$ theories. Our results show that this defect contribution is a linear function of $1/n$ and is directly proportional to $2b-d_2$, where $b$ and $d_2$ are the surface defect Weyl anomaly coefficients. We also derive a closed-form expression for the defect contribution to the supersymmetric Casimir energy, which simplifies to $-d_2$ (up to a proportionality constant) in the chiral algebra limit. △ Less

Submitted 16 January, 2025; originally announced January 2025.

Comments: 10 pages

High-temperature Phonon Coherence and Tunneling Effect in Semiconductor Superlattices

Authors: Zhi-Ming Geng, Jin-Shan Yao, Ying-Bin Cheng, Xue-Jun Yan, Jian Zhou, En-Rui Zhang, Jia-Yi Li, Ming-Qian Yuan, Xing Fan, Yu Deng, Hong Lu, Ming-Hui Lu, Yan-Feng Chen

Abstract: Phonons, the quanta of lattice vibrations, are primary heat carriers for semiconductors and dielectrics. The demand of effective phonon manipulation urgently emerges, because the thermal management is crucial for the ongoing development of micro/nano semiconductor devices towards higher integration and power densities1, 2. Phonons also show wave-particle duality, while they are commonly treated as… ▽ More Phonons, the quanta of lattice vibrations, are primary heat carriers for semiconductors and dielectrics. The demand of effective phonon manipulation urgently emerges, because the thermal management is crucial for the ongoing development of micro/nano semiconductor devices towards higher integration and power densities1, 2. Phonons also show wave-particle duality, while they are commonly treated as particle flows in current semiconductor structures3, 4. However, it sees constraints when the structure size reduces to nano and atomic scales, where the wave behavior of phonons begins to dominate, and studies of these phonon behaviors and their manipulations become long-standing challenges in experiments5. Here we show the experimental realization of coherent phonon transport, a wave-based thermal conduction fashion, in semiconductor structures. We report the successful observation of robust phonon coherence and tunneling effect in InAs/AlAs superlattices over an extensive temperature range up to 500 K, a breakthrough towards practical-application temperature for semiconductors compared with cryogenic conditions6. Our results demonstrate that the phonon coherence is robust even at a record-high interface density due to the dominating long-wavelength phonons, and the first-principles calculations clearly reveal their wave-particle duality. This revelation heralds a promising pathway towards efficient thermal phonon engineering at extreme scales, holding implications for a broad spectrum of semiconductor device applications, including microelectronics, optoelectronics, and thermoelectrics. △ Less

Submitted 11 December, 2024; originally announced December 2024.

Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length

Authors: Furkan M. Altincicek, Lucian Livadaru, Christopher C. Leon, Taras Chutora, Max Yuan, Roshan Achal, Jeremiah Croshaw, Jason Pitters, Robert Wolkow

Abstract: Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units. Silicon dimer wires are much more stable than wires composed of individual dangling bonds. Dimer wires composed of 1 to 5 dimers were intentionally fabricated and cha… ▽ More Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units. Silicon dimer wires are much more stable than wires composed of individual dangling bonds. Dimer wires composed of 1 to 5 dimers were intentionally fabricated and characterised by STM techniques combined with density functional theory to provide detailed insights into geometric and electronic structure. Structural and dynamic qualities displayed by short wires were shown to be similar to the characteristics of a relatively long 37 dimer wire. Rather than adding two states into the band gap, experiment and theory reveal that each dimer adds one empty state into the gap and one filled state into the valence bands. Coupling among these states provides a conduction pathway with small bulk coupling. △ Less

Submitted 15 November, 2024; originally announced November 2024.

Comments: 14 pages, 5 figures

Attomicroscopy imaging and control of electron motion in graphene

Authors: Mingrui Yuan, Husain Alqattan, Dandan Hui, Mohamed Sennary, Vladimir Pervak, Nikolay V. Golubev, Mohammed Th. Hassan

Abstract: Attosecond science has leveraged the highly nonlinear interactions between intense few-cycle laser pulses and matter, allowing for unprecedented observation and control of electron motion with remarkable temporal resolution. However, most existing experiments focusing on laser-controlled attosecond dynamics have dealt with quasi-bound electrons released in the ionization continua of atoms, molecul… ▽ More Attosecond science has leveraged the highly nonlinear interactions between intense few-cycle laser pulses and matter, allowing for unprecedented observation and control of electron motion with remarkable temporal resolution. However, most existing experiments focusing on laser-controlled attosecond dynamics have dealt with quasi-bound electrons released in the ionization continua of atoms, molecules, or conduction bands in solid-state systems. Here, we employed the recently developed attomicroscopy imaging tool to investigate, visualize, and manipulate the motion of bound electrons in graphene. By adjusting the carrier-envelope phase and the field strength of the driving electric field, we were able to control both the amplitude and direction of the field-induced electron current between carbon atoms in graphene. This research opens new avenues for understanding and controlling dynamic, on-demand electron motion processes, including chemical reactions, molecular bonding, and the electronic properties of materials. △ Less

Submitted 4 November, 2024; originally announced November 2024.

Reflected multi-entropy and its holographic dual

Authors: Ma-Ke Yuan, Mingyi Li, Yang Zhou

Abstract: We introduce a mixed-state generalization of the multi-entropy through the canonical purification, which we called reflected multi-entropy. We propose the holographic dual of this measure. For the tripartite case, a field-theoretical calculation is performed using a six-point function of twist operators at large $c$ limit. At both zero and finite temperature, the field-theoretical results match th… ▽ More We introduce a mixed-state generalization of the multi-entropy through the canonical purification, which we called reflected multi-entropy. We propose the holographic dual of this measure. For the tripartite case, a field-theoretical calculation is performed using a six-point function of twist operators at large $c$ limit. At both zero and finite temperature, the field-theoretical results match the holographic results exactly, supporting our holographic conjecture of this new measure. △ Less

Submitted 11 October, 2024; originally announced October 2024.

Comments: 11 pages, 11 figures

Light-induced quantum tunnelling current in graphene

Authors: Mohamed Sennary, Jalil Shah, Mingrui Yuan, Ahmed Mahjoub, Vladimir Pervak, Nikolay Golubev, Mohammed Hassan

Abstract: In the last decade, advancements in attosecond spectroscopy have allowed us to study electron motion dynamics in condensed matter. The access to these electron dynamics and, consequently, its control by an ultrafast light field paves the way for establishing ultrafast optoelectronics. Here, we report the generation of light-induced quantum tunnelling current in graphene phototransistors by ultrafa… ▽ More In the last decade, advancements in attosecond spectroscopy have allowed us to study electron motion dynamics in condensed matter. The access to these electron dynamics and, consequently, its control by an ultrafast light field paves the way for establishing ultrafast optoelectronics. Here, we report the generation of light-induced quantum tunnelling current in graphene phototransistors by ultrafast laser pulses in an ambient environment. This tunnelling effect provides access to the instantaneous field-driven current to demonstrate the current switching (ON and OFF) on a 630 attosecond (1.6 petahertz speed). Moreover, we controlled the tunnelling current and enhanced the graphene phototransistor conductivity by controlling the density of the photoexcited charge carriers at different pump laser powers. Furthermore, we exploited this capability to demonstrate various logic gates. The demonstrated light-induced tunnelling current and ultrafast switching were attained under standard room temperature and pressure conditions. Therefore, the presented scientific advancement in this work is at the technology readiness level suitable for its immediate integration into the development of ultrafast, nearly six orders of magnitude faster, optical transistors, lightwave electronics, and optical quantum computers. △ Less

Submitted 23 July, 2024; originally announced July 2024.

Comments: 24 pages and 4 figures

Attosecond Diffraction Imaging of Electron Dynamics in Solids

Authors: Mingrui Yuan, Nikolay V. Golubev

Abstract: Visualizing the electron dynamics in four dimensions of space and time is crucial to the understanding of several ubiquitous processes in nature. Hence, ultrafast X-ray and electron imaging tools have been developed to probe the dynamics of matter by means of the time-resolved diffraction imaging (TRDI). In this work, we report an extension of the theory underlying the TRDI to the case of the lase… ▽ More Visualizing the electron dynamics in four dimensions of space and time is crucial to the understanding of several ubiquitous processes in nature. Hence, ultrafast X-ray and electron imaging tools have been developed to probe the dynamics of matter by means of the time-resolved diffraction imaging (TRDI). In this work, we report an extension of the theory underlying the TRDI to the case of the laser-driven electron dynamics in solid state systems. We demonstrate that the TRDI signal encodes essential information about the time-dependent electron density of the system under study and thus makes it possible to decipher the ultrafast quantum dynamics and the electron transfer phenomena in solids. We apply the developed approach to image the laser-driven electron dynamics in neutral graphene showing that the predictions made by the fully quantum version of the TRDI deviate significantly from those obtained with the conventional semiclassical approach. △ Less

Submitted 24 November, 2024; v1 submitted 3 July, 2024; originally announced July 2024.

Rényi Entropy with Surface Defects in Six Dimensions

Authors: Ma-Ke Yuan, Yang Zhou

Abstract: We compute the surface defect contribution to Rényi entropy and supersymmetric Rényi entropy in six dimensions. We first compute the surface defect contribution to Rényi entropy for free fields, which verifies a previous formula about entanglement entropy with surface defect. Using conformal map to $S^1_β\times H^{d-1}$ we develop a heat kernel approach to compute the defect contribution to Rényi… ▽ More We compute the surface defect contribution to Rényi entropy and supersymmetric Rényi entropy in six dimensions. We first compute the surface defect contribution to Rényi entropy for free fields, which verifies a previous formula about entanglement entropy with surface defect. Using conformal map to $S^1_β\times H^{d-1}$ we develop a heat kernel approach to compute the defect contribution to Rényi entropy, which is applicable for $p$-dimensional defect in general $d$-dimensional free fields. Using the same geometry $S^1_β\times H^5$ with an additional background field, one can construct the supersymmetric refinement of the ordinary Rényi entropy for six-dimensional $(2,0)$ theories. We find that the surface defect contribution to supersymmetric Rényi entropy has a simple scaling as polynomial of Rényi index in the large $N$ limit. We also discuss how to connect the free field results and large $N$ results. △ Less

Submitted 3 October, 2023; originally announced October 2023.

Comments: 1+14 pages, 1 figure

Journal ref: JHEP 03 (2024) 031

Efficient multimode Wigner tomography

Authors: Kevin He, Ming Yuan, Yat Wong, Srivatsan Chakram, Alireza Seif, Liang Jiang, David I. Schuster

Abstract: Advancements in quantum system lifetimes and control have enabled the creation of increasingly complex quantum states, such as those on multiple bosonic cavity modes. When characterizing these states, traditional tomography scales exponentially in both computational and experimental measurement requirement, which becomes prohibitive as the state size increases. Here, we implement a state reconstru… ▽ More Advancements in quantum system lifetimes and control have enabled the creation of increasingly complex quantum states, such as those on multiple bosonic cavity modes. When characterizing these states, traditional tomography scales exponentially in both computational and experimental measurement requirement, which becomes prohibitive as the state size increases. Here, we implement a state reconstruction method whose sampling requirement instead scales polynomially with subspace size, and thus mode number, for states that can be expressed within such a subspace. We demonstrate this improved scaling with Wigner tomography of multimode entangled W states of up to 4 modes on a 3D circuit quantum electrodynamics (cQED) system. This approach performs similarly in efficiency to existing matrix inversion methods for 2 modes, and demonstrates a noticeable improvement for 3 and 4 modes, with even greater theoretical gains at higher mode numbers. △ Less

Submitted 18 September, 2023; originally announced September 2023.

Comments: 6 pages of main text with 4 figures. 10 pages of supplementary information with 6 figures

Defect Localized Entropy: Renormalization Group and Holography

Authors: Ma-Ke Yuan, Yang Zhou

Abstract: We consider $p$-dimensional defects in $D$-dimensional conformal field theories (CFTs) and construct defect localized entropy by performing Casini-Huerta-Myers transformation for the system with defect. The defect localized entropy is a measure of entanglement between the degrees of freedom localized on the defect. We show that at the fixed point of defect renormalization group (RG) flow, defect l… ▽ More We consider $p$-dimensional defects in $D$-dimensional conformal field theories (CFTs) and construct defect localized entropy by performing Casini-Huerta-Myers transformation for the system with defect. The defect localized entropy is a measure of entanglement between the degrees of freedom localized on the defect. We show that at the fixed point of defect renormalization group (RG) flow, defect localized entropy is equal to minus defect free energy for universal part. We construct defect $C$-functions from the defect localized entropy for surface defects and volume defects, and show that they monotonically decrease in both cases following the entropic method by Casini and Huerta. We also study the holographic dual of defect localized entropy and find that it is given by the minimal surface located at string or brane worldvolume embedded in the holographic bulk. △ Less

Submitted 31 March, 2023; v1 submitted 19 September, 2022; originally announced September 2022.

Comments: 11 pages, 5 figures

Journal ref: Nucl.Phys.B 994 (2023) 116301

Entanglement Negativity and Defect Extremal Surface

Authors: Yilu Shao, Ma-Ke Yuan, Yang Zhou

Abstract: We study entanglement negativity for evaporating black hole based on the holographic model with defect brane. We introduce a defect extremal surface formula for entanglement negativity. Based on partial reduction, we show the equivalence between defect extremal surface formula and island formula for entanglement negativity in AdS$_3$/BCFT$_2$. Extending the study to the model of eternal black hole… ▽ More We study entanglement negativity for evaporating black hole based on the holographic model with defect brane. We introduce a defect extremal surface formula for entanglement negativity. Based on partial reduction, we show the equivalence between defect extremal surface formula and island formula for entanglement negativity in AdS$_3$/BCFT$_2$. Extending the study to the model of eternal black hole plus CFT bath, we find that black hole-black hole negativity decreases until vanishing, left black hole-left radiation negativity is always a constant, radiation-radiation negativity increases and then saturates at a time later than Page time. In all the time dependent cases, defect extremal surface formula agrees with island formula. △ Less

Submitted 13 July, 2024; v1 submitted 13 June, 2022; originally announced June 2022.

Journal ref: SciPost Phys. Core 7, 027 (2024)

Motional decoherence in ultracold Rydberg atom quantum simulators of spin models

Authors: Zewen Zhang, Ming Yuan, Bhuvanesh Sundar, Kaden R. A. Hazzard

Abstract: Ultracold Rydberg atom arrays are an emerging platform for quantum simulation and computing. However, decoherence in these systems remains incompletely understood. Recent experiments [Guardado-Sanchez et al. Phys. Rev. X 8, 021069 (2018)] observed strong decoherence in the quench and longitudinal-field-sweep dynamics of two-dimensional Ising models realized with Lithium-6 Rydberg atoms in optical… ▽ More Ultracold Rydberg atom arrays are an emerging platform for quantum simulation and computing. However, decoherence in these systems remains incompletely understood. Recent experiments [Guardado-Sanchez et al. Phys. Rev. X 8, 021069 (2018)] observed strong decoherence in the quench and longitudinal-field-sweep dynamics of two-dimensional Ising models realized with Lithium-6 Rydberg atoms in optical lattices. This decoherence was conjectured to arise from spin-motion coupling. Here we show that spin-motion coupling indeed leads to decoherence in qualitative, and often quantitative, agreement with the experimental data, treating the difficult spin-motion coupled problem using the discrete truncated Wigner approximation method. We also show that this decoherence will be an important factor to account for in future experiments with Rydberg atoms in optical lattices and microtrap arrays, and discuss methods to mitigate the effect of motion, such as using heavier atoms or deeper traps. △ Less

Submitted 19 November, 2023; v1 submitted 20 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. A 110, 053321 (2024)

Defect Extremal Surface for Reflected Entropy

Authors: Tianyi Li, Ma-Ke Yuan, Yang Zhou

Abstract: Defect extremal surface is defined by extremizing the Ryu-Takayanagi formula corrected by the quantum defect theory. This is interesting when the AdS bulk contains a defect brane (or string). We introduce a defect extremal surface formula for reflected entropy, which is a mixed state generalization of entanglement entropy measure. Based on a decomposition procedure of an AdS bulk with a brane, we… ▽ More Defect extremal surface is defined by extremizing the Ryu-Takayanagi formula corrected by the quantum defect theory. This is interesting when the AdS bulk contains a defect brane (or string). We introduce a defect extremal surface formula for reflected entropy, which is a mixed state generalization of entanglement entropy measure. Based on a decomposition procedure of an AdS bulk with a brane, we demonstrate the equivalence between defect extremal surface formula and island formula for reflected entropy in AdS$_3$/BCFT$_2$. We also compute the evolution of reflected entropy in evaporating black hole model and find that defect extremal surface formula agrees with island formula. △ Less

Submitted 19 August, 2021; originally announced August 2021.

Comments: 1+35 pages, 23 figures

Journal ref: JHEP 01 (2022) 018

Realizing Su-Schrieffer-Heeger topological edge states in Rydberg-atom synthetic dimensions

Authors: S. K. Kanungo, J. D. Whalen, Y. Lu, M. Yuan, S. Dasgupta, F. B. Dunning, K. R. A. Hazzard, T. C. Killian

Abstract: We demonstrate a platform for synthetic dimensions based on coupled Rydberg levels in ultracold atoms, and we implement the single-particle Su-Schrieffer-Heeger (SSH) Hamiltonian. Rydberg levels are interpreted as synthetic lattice sites, with tunneling introduced through resonant millimeter-wave couplings. Tunneling amplitudes are controlled through the millimeter-wave amplitudes, and on-site pot… ▽ More We demonstrate a platform for synthetic dimensions based on coupled Rydberg levels in ultracold atoms, and we implement the single-particle Su-Schrieffer-Heeger (SSH) Hamiltonian. Rydberg levels are interpreted as synthetic lattice sites, with tunneling introduced through resonant millimeter-wave couplings. Tunneling amplitudes are controlled through the millimeter-wave amplitudes, and on-site potentials are controlled through detunings of the millimeter waves from resonance. Using alternating weak and strong tunneling with weak tunneling to edge lattice sites, we attain a configuration with symmetry-protected topological edge states. The band structure is probed through optical excitation to the Rydberg levels from the ground state, which reveals topological edge states at zero energy. We verify that edge-state energies are robust to perturbation of tunneling-rates, which preserves chiral symmetry, but can be shifted by the introduction of on-site potentials. △ Less

Submitted 8 January, 2021; originally announced January 2021.

Comments: 6 pages, 5 figures

Remotely pumped GHz antibunched emission from single exciton centers in GaAs

Authors: M. Yuan, K. Biermann, S. Takada, C. Bäuerle, P. V. Santos

Abstract: Quantum communication networks require on-chip transfer and manipulation of single particles as well as their interconversion to single photons for long-range information exchange. Flying excitons propelled by GHz surface acoustic waves (SAWs) are outstanding messengers to fulfill these requirements. Here, we demonstrate the acoustic manipulation of single exciton centers consisting of individual… ▽ More Quantum communication networks require on-chip transfer and manipulation of single particles as well as their interconversion to single photons for long-range information exchange. Flying excitons propelled by GHz surface acoustic waves (SAWs) are outstanding messengers to fulfill these requirements. Here, we demonstrate the acoustic manipulation of single exciton centers consisting of individual excitons bound to shallow impurities centers embedded in a semiconductor quantum well. Time-resolved photoluminescence studies show that the emission intensity and energy from these centers oscillate at the SAW frequency of 3.5 GHz. Furthermore, these centers can be remotely pumped via acoustic transport of flying excitons along a quantum well channel over several microns. Time correlation studies reveal that the centers emit anti-bunched light, thus acting as single-photon sources operating at GHz frequencies. Our results pave the way for the exciton-based on-demand manipulation and on-chip transfer of single excitons at microwave frequencies with a natural photonic interface. △ Less

Submitted 9 March, 2021; v1 submitted 11 May, 2020; originally announced May 2020.

Comments: Main text: 20 pages, 5 figures. Supporting Information: 5 pages, 4 figures

Journal ref: ACS Photonics 8 (2021) 758-764

High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity

Authors: S. H. Han, Z. Z. Zhou, C. Y. Sheng, J. H. Liu, L. Wang, H. M. Yuan, H. J. Liu

Abstract: Half-Heusler compounds usually exhibit relatively higher lattice thermal conductivity that is undesirable for thermoelectric applications. Here we demonstrate by first-principles calculations and Boltzmann transport theory that the BiBaK system is an exception, which has rather low thermal conductivity as evidenced by very small phonon group velocity and relaxation time. Detailed analysis indicate… ▽ More Half-Heusler compounds usually exhibit relatively higher lattice thermal conductivity that is undesirable for thermoelectric applications. Here we demonstrate by first-principles calculations and Boltzmann transport theory that the BiBaK system is an exception, which has rather low thermal conductivity as evidenced by very small phonon group velocity and relaxation time. Detailed analysis indicates that the heavy Bi and Ba atoms form a cage-like structure, inside which the light K atom rattles with larger atomic displacement parameters. In combination with its good electronic transport properties, the BiBaK shows a maximum n-type ZT value of 1.9 at 900 K, which outperforms most half-Heusler thermoelectric materials. △ Less

Submitted 26 April, 2020; originally announced April 2020.

Cavity electromechanics with parametric mechanical driving

Authors: Daniel Bothner, Shun Yanai, Agustin Iniguez-Rabago, Mingyun Yuan, Yaroslav M. Blanter, Gary A. Steele

Abstract: Microwave optomechanical circuits have been demonstrated in the past years to be extremely powerfool tools for both, exploring fundamental physics of macroscopic mechanical oscillators as well as being promising candidates for novel on-chip quantum limited microwave devices. In most experiments so far, the mechanical oscillator is either used as a passive device element and its displacement is det… ▽ More Microwave optomechanical circuits have been demonstrated in the past years to be extremely powerfool tools for both, exploring fundamental physics of macroscopic mechanical oscillators as well as being promising candidates for novel on-chip quantum limited microwave devices. In most experiments so far, the mechanical oscillator is either used as a passive device element and its displacement is detected using the superconducting cavity or manipulated by intracavity fields. Here, we explore the possibility to directly and parametrically manipulate the mechanical nanobeam resonator of a cavity electromechanical system, which provides additional functionality to the toolbox of microwave optomechanical devices. In addition to using the cavity as an interferometer to detect parametrically modulated mechanical displacement and squeezed thermomechanical motion, we demonstrate that parametric modulation of the nanobeam resonance frequency can realize a phase-sensitive parametric amplifier for intracavity microwave photons. In contrast to many other microwave amplification schemes using electromechanical circuits, the presented technique allows for simultaneous cooling of the mechanical element, which potentially enables this type of optomechanical microwave amplifier to be quantum-limited. △ Less

Submitted 22 August, 2019; originally announced August 2019.

Sound-driven single-electron transfer in a circuit of coupled quantum rails

Authors: Shintaro Takada, Hermann Edlbauer, Hugo V. Lepage, Junliang Wang, Pierre-André Mortemousque, Giorgos Georgiou, Crispin H. W. Barnes, Chris J. B. Ford, Mingyun Yuan, Paulo V. Santos, Xavier Waintal, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Christopher Bäuerle

Abstract: Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we… ▽ More Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we present two essential building blocks of such a SAW-driven quantum circuit. First, we implement a directional coupler allowing to partition a flying electron arbitrarily into two paths of transportation. Second, we demonstrate a triggered single-electron source enabling synchronisation of the SAW-driven sending process. Exceeding a single-shot transfer efficiency of 99 %, we show that a SAW-driven integrated circuit is feasible with single electrons on a large scale. Our results pave the way to perform quantum logic operations with flying electron qubits. △ Less

Submitted 23 September, 2019; v1 submitted 2 March, 2019; originally announced March 2019.

Comments: Accepted for Publication in Nature Communications

Journal ref: Nature Communications 10, 4557 (2019)

Tunneling blockade and single-photon emission in GaAs double quantum wells

Authors: M. Yuan, A. Hernández-Mínguez, K. Biermann, P. V. Santos

Abstract: We report on the selective excitation of single impurity-bound exciton states in a GaAs double quantum well (DQW). The structure consists of two quantum wells (QWs) coupled by a thin tunnel barrier. The DQW is subject to a transverse electric field to create spatially indirect inter-QW excitons with electrons and holes located in different QWs. We show that the presence of intra-QW charged exciton… ▽ More We report on the selective excitation of single impurity-bound exciton states in a GaAs double quantum well (DQW). The structure consists of two quantum wells (QWs) coupled by a thin tunnel barrier. The DQW is subject to a transverse electric field to create spatially indirect inter-QW excitons with electrons and holes located in different QWs. We show that the presence of intra-QW charged excitons (trions) blocks carrier tunneling across the barrier to form indirect excitons, thus opening a gap in their emission spectrum. This behavior is attributed to the low binding energy of the trions. Within the tunneling blockade regime, emission becomes dominated by processes involving excitons bound to single shallow impurities, which behave as two-level centers activated by resonant tunneling. The quantum nature of the emission is confirmed by the anti-bunched photon emission statistics. The narrow distribution of emission energies ($\sim 10$~meV) and the electrical connection to the QWs make these single-exciton centers interesting candidates for applications in single-photon sources. △ Less

Submitted 26 July, 2018; originally announced July 2018.

Comments: 5 pages, 5 figures plus supplementary materials

Journal ref: Phys. Rev. B 98, 155311 (2018)

A split-cavity design for the incorporation of a DC bias in a 3D microwave cavity

Authors: Martijn A. Cohen, Mingyun Yuan, Bas W. A. de Jong, Ewout Beukers, Sal J. Bosman, Gary A. Steele

Abstract: We report on a technique for applying a DC bias in a 3D microwave cavity. We achieve this by isolating the two halves of the cavity with a dielectric and directly using them as DC electrodes. As a proof of concept, we embed a variable capacitance diode in the cavity and tune the resonant frequency with a DC voltage, demonstrating the incorporation of a DC bias into the 3D cavity with no measurable… ▽ More We report on a technique for applying a DC bias in a 3D microwave cavity. We achieve this by isolating the two halves of the cavity with a dielectric and directly using them as DC electrodes. As a proof of concept, we embed a variable capacitance diode in the cavity and tune the resonant frequency with a DC voltage, demonstrating the incorporation of a DC bias into the 3D cavity with no measurable change in its quality factor at room temperature. We also characterize the architecture at millikelvin temperatures and show that the split cavity design maintains a quality factor $Q_\text{i} \sim 8.8 \times 10^5$, making it promising for future quantum applications. △ Less

Submitted 24 April, 2017; originally announced April 2017.

Mechanical dissipation in MoRe superconducting metal drums

Authors: S. Yanai, V. Singh, M. Yuan, M. Gely, S. J. Bosman, G. A. Steele

Abstract: We experimentally investigate dissipation in mechanical resonators made of a disordered superconducting thin film of Molybdenum-Rhenium(MoRe) alloy. By electrostatically driving the drum with a resonant AC voltage, we detect its motion using a superconducting microwave cavity. From the temperature dependence of mechanical resonance frequencies and quality factors, we find evidence for non-resonant… ▽ More We experimentally investigate dissipation in mechanical resonators made of a disordered superconducting thin film of Molybdenum-Rhenium(MoRe) alloy. By electrostatically driving the drum with a resonant AC voltage, we detect its motion using a superconducting microwave cavity. From the temperature dependence of mechanical resonance frequencies and quality factors, we find evidence for non-resonant, mechanically active two-level systems (TLSs) limiting its quality factor at low temperature. In addition, we observe a strong suppression of mechanical dissipation at large mechanical driving amplitudes, suggesting an unconventional saturation of the non-resonant TLSs. These new observations shed light on the mechanism of mechanical damping in superconducting drums and routes towards understanding dissipation in such mechanical systems. △ Less

Submitted 5 August, 2016; originally announced August 2016.

Silicon nitride membrane resonators at millikelvin temperatures with quality factors exceeding $10^8$

Authors: Mingyun Yuan, Martijn A. Cohen, Gary Steele

Abstract: We study mechanical dissipation of the fundamental mode of millimeter-sized, high quality-factor ($Q$) metalized silicon nitride membranes at temperatures down to 14 mK using a three-dimensional optomechanical cavity. Below 200 mK, high-$Q$ modes of the membranes show a diverging increase of $Q$ with decreasing temperature, reaching $Q=1.27\times10^8$ at 14 mK, an order of magnitude higher than re… ▽ More We study mechanical dissipation of the fundamental mode of millimeter-sized, high quality-factor ($Q$) metalized silicon nitride membranes at temperatures down to 14 mK using a three-dimensional optomechanical cavity. Below 200 mK, high-$Q$ modes of the membranes show a diverging increase of $Q$ with decreasing temperature, reaching $Q=1.27\times10^8$ at 14 mK, an order of magnitude higher than reported before. The ultra-low dissipation makes the membranes highly attractive for the study of optomechanics in the quantum regime, as well as for other applications of optomechanics such as microwave to optical photon conversion. △ Less

Submitted 11 January, 2016; v1 submitted 26 October, 2015; originally announced October 2015.

Comments: 12 pages, 4 figures

Journal ref: Applied Physics Letters, 107, 263501(2015)

Tunable Quantum Spin Hall Effect via Strain in two-Dimensional Arsenene Monolayer

Authors: Ya-ping Wang, Chang-wen Zhang, Wei-xiao Ji, Run-wu Zhang, Ping Li, Pei-ji Wang, Miao-juan Ren, Xin-lian Chen, Min Yuan

Abstract: The search for new quantum spin Hall (QSH) phase and effective manipulations of their edge states are very important for both fundamental sciences and practical applications. Here, we use first-principles calculations to study the strain-driven topological phase transition of two-dimensional (2D) arsenene monolayer. We find that the band gap of arsenene decreases with increasing strain and changes… ▽ More The search for new quantum spin Hall (QSH) phase and effective manipulations of their edge states are very important for both fundamental sciences and practical applications. Here, we use first-principles calculations to study the strain-driven topological phase transition of two-dimensional (2D) arsenene monolayer. We find that the band gap of arsenene decreases with increasing strain and changes from indirect to direct, and then the s-p band inversion takes place at Γ point as the tensile strain is larger than 11.14%, which lead to a nontrivially topological state. A single pair of topologically protected helical edge states is established for the edge of arsenene, and their QSH states are confirmed with nontrivial topological invariant Z2 = 1. We also propose high-dielectric BN as an ideal substrate for the experimental synthesis of arsenene, maintaining its nontrivial topology. These findings provide a promising candidate platform for topological phenomena and new quantum devices operating at nanoelectronics. △ Less

Submitted 16 October, 2015; originally announced October 2015.

Journal ref: J. Phys. D: Appl. Phys. 49 055305 (2016)

Large cooperativity and microkelvin cooling with a three-dimensional optomechanical cavity

Authors: Mingyun Yuan, Vibhor Singh, Yaroslav M. Blanter, Gary A. Steele

Abstract: In cavity optomechanics, light is used to control mechanical motion. A central goal of the field is achieving single-photon strong coupling, which would enable the creation of quantum superposition states of motion. Reaching this limit requires significant improvements in optomechanical coupling and cavity coherence. Here we introduce an optomechanical architecture consisting of a silicon nitride… ▽ More In cavity optomechanics, light is used to control mechanical motion. A central goal of the field is achieving single-photon strong coupling, which would enable the creation of quantum superposition states of motion. Reaching this limit requires significant improvements in optomechanical coupling and cavity coherence. Here we introduce an optomechanical architecture consisting of a silicon nitride membrane coupled to a three-dimensional superconducting microwave cavity. Exploiting their large quality factors, we achieve an optomechanical cooperativity of 146,000 and perform sideband cooling of the kilohertz-frequency membrane motion to 34$\pm$5 $μ$K, the lowest mechanical mode temperature reported to date. The achieved cooling is limited only by classical noise of the signal generator, and should extend deep into the ground state with superconducting filters. Our results suggest that this realization of optomechanics has the potential to reach the regimes of ultra-large cooperativity and single-photon strong coupling, opening up a new generation of experiments. △ Less

Submitted 16 October, 2015; v1 submitted 31 July, 2015; originally announced July 2015.

Journal ref: Nature Communications, Vol 6, Article 8491, Year 2015

Incorporation of a dc bias in a high-Q 3d microwave cavity

Authors: Mingyun Yuan, Sal J. Bosman, G. A. Steele

Abstract: We report a technique for applying a dc bias in a 3d microwave cavity. This is achieved by isolating the two halves of the cavity with a dielectric and directly using them as dc electrodes. By embedding a variable capacitance diode in the cavity, we tune the resonant frequency with a dc voltage at room temperature, demonstrating the introduction of a dc bias into the 3d cavity without compromising… ▽ More We report a technique for applying a dc bias in a 3d microwave cavity. This is achieved by isolating the two halves of the cavity with a dielectric and directly using them as dc electrodes. By embedding a variable capacitance diode in the cavity, we tune the resonant frequency with a dc voltage at room temperature, demonstrating the introduction of a dc bias into the 3d cavity without compromising its high quality factor. △ Less

Submitted 29 May, 2017; v1 submitted 18 November, 2013; originally announced November 2013.

Comments: The article was replaced by a different extended article with extra data. See arXiv:1704.07220

Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots

Authors: Mingyun Yuan, R. Joynt, Zhen Yang, Chunyang Tang, D. E. Savage, M. G. Lagally, M. A. Eriksson, A. J. Rimberg

Abstract: We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side… ▽ More We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for non-zero magnetic field, a phenomenon consistent with valley non- conservation in tunneling, is observed in two samples. △ Less

Submitted 29 June, 2014; v1 submitted 4 December, 2012; originally announced December 2012.

Comments: 16 pages, 7 figures

Journal ref: Phys. Rev. B 90, 035302, (2014)

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Authors: Mingyun Yuan, Feng Pan, Zhen Yang, T. J. Gilheart, Fei Chen, D. E. Savage, M. G. Lagally, M. A. Eriksson, A. J. Rimberg

Abstract: We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the S-SET are observed at a t… ▽ More We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the S-SET are observed at a temperature of 0.3 K. Coupling of the S-SET to the QD is confirmed by using the S-SET to perform sensing of the QD charge state. △ Less

Submitted 22 February, 2011; originally announced February 2011.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 98, 142104 (2011)