Showing 1–50 of 188 results for author: Yu, S

Observation of quasi-steady dark excitons and gap phase in a doped semiconductor

Authors: Shangkun Mo, Yunfei Bai, Chunlong Wu, Xingxia Cui, Guangqiang Mei, Qiang Wan, Renzhe Li, Cao Peng, Keming Zhao, Dingkun Qin, Shuming Yu, Hao Zhong, Xingzhe Wang, Enting Li, Yiwei Li, Limin Cao, Min Feng, Sheng Meng, Nan Xu

Abstract: Exciton plays an important role in optics and optics-related behaviors and leads to novel correlated phases like charge order, exciton insulator, and exciton-polariton condensation. Dark exciton shows distinct properties from bright one. However, it cannot be directly detected by conventional optic measurements. The electronic modulation effect of dark excitons in quasi-equilibrium distribution, c… ▽ More Exciton plays an important role in optics and optics-related behaviors and leads to novel correlated phases like charge order, exciton insulator, and exciton-polariton condensation. Dark exciton shows distinct properties from bright one. However, it cannot be directly detected by conventional optic measurements. The electronic modulation effect of dark excitons in quasi-equilibrium distribution, critical for electronic devices in working status, is still elusive. Here, using angle-resolved photoemission spectroscopy, we report creating, detecting, and controlling dark excitons in the quasi-equilibrium distribution in a doped semiconductor SnSe2. Surprisingly, we observe an excitonic gap phase, with a conduction band opening an anisotropic gap. Our results broaden the scope of dark excitons, extending their studies from the picosecond timescale in the ultrafast photoemission process to conditions occurring under quasi-equilibrium. We reveal the light-matter interaction in the engineering of electronic structures and provide a new way to realize the excitonic gap phase in semiconductors with large band gaps. △ Less

Submitted 11 July, 2025; originally announced July 2025.

Comments: 16 pages, 5 figures

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting

Authors: Jie Zhou, Haibo Wang, Yifu Guo, Alireza Abrand, Yiran Li, Yang Liu, Jiarui Gong, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui-Qing Yu, Parsian K. Mohseni, Guo-En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A Kats, Zhenqiang Ma

Abstract: Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of heterojunction devices, in particular utilizing extreme lattice mismatches. We demonstrate the manipulation of device behaviors and performance enhancement ach… ▽ More Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of heterojunction devices, in particular utilizing extreme lattice mismatches. We demonstrate the manipulation of device behaviors and performance enhancement achievable through a lattice-mismatched, single-crystalline GaAs/GeSn-multi-quantum well (MQW)/Ge n-i-p heterojunction by employing advanced semiconductor grafting technology. With engineered band alignment and optical field distribution, the grafted GaAs/GeSn-MQW/Ge n-i-p photodiode achieved outstanding performance: a record-low dark current density of 1.22E10^-7 A/cm^2, an extended spectral response from ~0.5 to 2 um, and improved photoresponsivity of RVIS of 0.85 A/W and RNIR of 0.40 A/W at 520 and 1570 nm, respectively. The dark current density is at least 5 orders of magnitude lower than state-of-the-art GeSn photodiodes. The photoresponsivity demonstrates an approximately sevenfold enhancement in the VIS range and a threefold improvement in the NIR range compared to the reference epitaxial photodiode. This work presents a unique strategy for constructing lattice-mismatched semiconductor heterojunction devices. More importantly, the implications transcend the current GaAs/GeSn-MQW/Ge example, offering potential applications in other material systems and freeing device design from the stringent lattice-matching constraints of conventional heteroepitaxy. △ Less

Submitted 7 June, 2025; originally announced June 2025.

Comments: 25 pages, 6 figures

A Concise Primer on Solid-State Quantum Emitters

Authors: Shicheng Yu, Xiaojie Zhang, Xia Lei, Liang Zhai

Abstract: Quantum emitters serve as essential on-demand photonic resources, generating quantum states of light such as single photons and entangled photon pairs while serving as interfaces between light and matter. Buried in the solid state, quantum emitters enable a straightforward adoption of advanced nanofabrication techniques, facilitating precise engineering of their photonic environment for scalable q… ▽ More Quantum emitters serve as essential on-demand photonic resources, generating quantum states of light such as single photons and entangled photon pairs while serving as interfaces between light and matter. Buried in the solid state, quantum emitters enable a straightforward adoption of advanced nanofabrication techniques, facilitating precise engineering of their photonic environment for scalable quantum technologies. In this review, we introduce the fundamentals of quantum emitters and the key metrics characterising their performance. We highlight three material platforms: quantum dots, defect centres in diamond, and defect centres in silicon carbide. We summarise the recent developments of these platforms and discuss their advancements in quantum applications, including quantum communication, computation, and sensing. Finally, we provide a comparison across the three platforms, along with an outlook on future directions and potential challenges. △ Less

Submitted 7 June, 2025; originally announced June 2025.

Comments: 19 pages, 4 figures, 1 table

Exact solution and Luttinger liquid behavior of the quantum 1D hard rod model

Authors: Shengjie Yu, Zhaoxuan Zhu, Laurent Sanchez-Palencia

Abstract: The quantum hard rod model, a one-dimensional extension of the Lieb-Liniger model, is exactly solved using an adapted Bethe ansatz. Our solution, benchmarked against path-integral quantum Monte Carlo calculations, reveals significant corrections to the excitation spectrum and thermodynamic properties, previously overlooked by the standard excluded-volume approach. We also show that the hard rod mo… ▽ More The quantum hard rod model, a one-dimensional extension of the Lieb-Liniger model, is exactly solved using an adapted Bethe ansatz. Our solution, benchmarked against path-integral quantum Monte Carlo calculations, reveals significant corrections to the excitation spectrum and thermodynamic properties, previously overlooked by the standard excluded-volume approach. We also show that the hard rod model exhibits Luttinger liquid behavior across a wide range of parameters, at zero and finite temperature, as unveiled by correlation functions. This work provides a comprehensive framework for understanding strongly correlated regimes in dilute 1D systems, with applications to quantum wires, spin chains, and ultracold atoms. △ Less

Submitted 26 May, 2025; originally announced May 2025.

Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

Authors: Diandian Zhang, Nirosh M. Eldose, Dinesh Baral, Hryhorii Stanchu, Sudip Acharya, Fernando Maia de Oliveira, Mourad Benamara, Haochen Zhao, Yuping Zeng, Wei Du, Gregory J. Salamo, Shui-Qing Yu

Abstract: Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap at high Sn concentrations. However, synthesizing Sn-rich GeSn structures remains challenging due to the low solid solubility of Sn in Ge (less than 1%) and the s… ▽ More Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap at high Sn concentrations. However, synthesizing Sn-rich GeSn structures remains challenging due to the low solid solubility of Sn in Ge (less than 1%) and the substantial lattice mismatch ( about 14%) between Sn and Ge. In this work, we demonstrate the successful growth of high-quality, relaxed GeSn layers with Sn contents of 9.2% and 11.4% on Si(100) substrates via molecular beam epitaxy (MBE). As far as we know, this is the first report of direct bandgap photoluminescence observed from MBE-grown GeSn films without post-growth annealing. Structural characterizations including X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM) confirm uniform Sn incorporation with minimal defect formation. Atomic force microscopy (AFM) reveals smooth surfaces with low roughness. Temperature-dependent photoluminescence (PL) measurements further confirm direct bandgap emission, representing a new stage in the development of MBE-grown GeSn. △ Less

Submitted 6 May, 2025; originally announced May 2025.

Comments: 12 pages,5 figures

Nature of the 1/3 Magnetization Plateau in Spin-1/2 Kagome Antiferromagnets

Authors: Li-Wei He, Xinzhe Wang, Shun-Li Yu, Jian-Xin Li

Abstract: We investigate the origin of the 1/3 magnetization plateau in the $S=1/2$ kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods, to account for the recent experimental observations in YCu$_3$(OH)$_{6+x}$Br$_{3-x}$ and YCu$_3$(OD)$_{6+x}$Br$_{3-x}$. We identify three degenerate valence-bond-solid (VBS) states forming a… ▽ More We investigate the origin of the 1/3 magnetization plateau in the $S=1/2$ kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods, to account for the recent experimental observations in YCu$_3$(OH)$_{6+x}$Br$_{3-x}$ and YCu$_3$(OD)$_{6+x}$Br$_{3-x}$. We identify three degenerate valence-bond-solid (VBS) states forming a $\sqrt{3} \times \sqrt{3}$ unit cell. These states exhibit David-star patterns in the spin moment distribution with only two fractional values $-1/3$ and $2/3$, and are related through translational transformations. While the spin correlations in these VBS states are found to be short-range, resembling a quantum spin liquid, we show that they have a vanishing topological entanglement entropy and thus are topologically trivial many-body states. Our theoretical results provide strong evidence that the 1/3 magnetization plateau observed in recent experiments arises from these $\sqrt{3} \times \sqrt{3}$ VBS states with fractional spin moments. △ Less

Submitted 25 April, 2025; originally announced April 2025.

Comments: submmited to Chinese Physics Letters

The possible frustrated superconductivity in the kagome superconductors

Authors: Hong-Min Jiang, Wen-Qian Dong, Shun-Li Yu, Z. D. Wang

Abstract: Geometric frustration has long been a subject of enduring interest in condensed matter physics. While geometric frustration traditionally focuses on magnetic systems, little attention is paid to the "frustrated superconductivity" which could arise when the superconducting interaction conflicts with the crystal symmetry. The recently discovered kagome superconductors provide a particular opportunit… ▽ More Geometric frustration has long been a subject of enduring interest in condensed matter physics. While geometric frustration traditionally focuses on magnetic systems, little attention is paid to the "frustrated superconductivity" which could arise when the superconducting interaction conflicts with the crystal symmetry. The recently discovered kagome superconductors provide a particular opportunity for studying this due to the fact that the frustrated lattice structure and the interference effect between the three sublattices can facilitate the frustrated superconducting interaction. Here, we propose a theory that supports the frustrated superconducting state, derived from the on-site $s$-wave superconducting pairing in conjunction with the nearest-neighbor pairings hoping and the unique geometrical frustrated lattice structure. In this state, whereas the mutual $2π/3$ difference of the superconducting pairing phase causes the six-fold modulation of the amplitude and breaks the time-reversal symmetry with $4π$ phase changes of the superconducting pairing as one following it around the Fermi surface, it is immune to the impurities without the impurity-induced in-gap states and produces the pronounced Hebel-Slichter peak of the nuclear spin-lattice relaxation rate below $T_{c}$. Notably, the theory also reveals a disorder-induced superconducting pairing transition from the frustrated superconducting state to an isotropic $s$-wave superconducting state without traversing the nodal points, recovering and explaining the behavior found in experiment. This study not only serves as a promising proposal to mediate the divergent or seemingly contradictory experimental outcomes regarding superconducting pairing symmetry, but may also pave the way for advancing investigations into the frustrated superconducting state. △ Less

Submitted 14 May, 2025; v1 submitted 25 April, 2025; originally announced April 2025.

Comments: 10 pages, 5 figures

Transition from $s_{\pm}$-wave to $d_{x^{2}-y^{2}}$-wave superconductivity driven by interlayer interaction in the bilayer two-orbital model of La$_3$Ni$_2$O$_7$

Authors: Wenhan Xi, Shun-Li Yu, Jian-Xin Li

Abstract: We utilize the fluctuation-exchange approximation on a bilayer two-orbital model, incorporating $d_{x^2-y^2}$ and $d_{z^2}$ orbitals, to explore potential pairing symmetries in the bilayer nickelate La$_3$Ni$_2$O$_7$. Our study particularly examines the impact of interlayer Coulomb interactions. In the absence of these interactions, the superconducting gap exhibits $s_{\pm}$-wave symmetry, with pr… ▽ More We utilize the fluctuation-exchange approximation on a bilayer two-orbital model, incorporating $d_{x^2-y^2}$ and $d_{z^2}$ orbitals, to explore potential pairing symmetries in the bilayer nickelate La$_3$Ni$_2$O$_7$. Our study particularly examines the impact of interlayer Coulomb interactions. In the absence of these interactions, the superconducting gap exhibits $s_{\pm}$-wave symmetry, with predominant intraorbital pairing in the $d_{z^2}$ orbital. As interlayer interactions increase, $s_{\pm}$-wave superconductivity is suppressed, while the superconductivity with a $d_{x^2-y^2}$-wave gap is enhanced, resulting in a transition at a critical interaction strength. This $d_{x^2-y^2}$-wave superconductivity is distinct not only from the $s_{\pm}$-wave superconductivity but also from the intraorbital $d$-wave pairing in cuprate superconductors, as it is dominated by the interlayer pairing between the $d_{x^2-y^2}$ and $d_{z^2}$ orbitals. Additionally, charge fluctuations play a crucial role in driving the transition from $s_{\pm}$ wave to $d_{x^2-y^2}$ wave superconductivity. Our findings indicate that interlayer Coulomb interactions are crucial for understanding the pairing mechanism in La$_3$Ni$_2$O$_7$. △ Less

Submitted 19 March, 2025; originally announced March 2025.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. B 111, 104505 (2025)

Power Spectra of Velocity Fluctuations in Granular Heap Flow

Authors: ShuChang Yu, Jin Shang, YangRui Chen, Ran Li, Quan Chen, Hui Yang, Hu Zheng, Jie Zhang

Abstract: This study used Speckle Visibility Spectroscopy to examine velocity fluctuations in a three-dimensional granular heap flow, where the mean velocity profile consists of a fast-flow surface layer and a creep layer beneath. The velocity spectra follow power-law scalings, $E(f) \propto f^α$, with $α\approx -0.85$ in the surface flow layer -- matching the Self-Organized Criticality (SOC) model with ope… ▽ More This study used Speckle Visibility Spectroscopy to examine velocity fluctuations in a three-dimensional granular heap flow, where the mean velocity profile consists of a fast-flow surface layer and a creep layer beneath. The velocity spectra follow power-law scalings, $E(f) \propto f^α$, with $α\approx -0.85$ in the surface flow layer -- matching the Self-Organized Criticality (SOC) model with open boundaries ($α\approx -0.95$). In the creep layer, $α$ decreases with depth, reaching $α\approx -1.5$ at approximately 55 mean particle diameters, consistent with the SOC model with closed boundaries ($α\approx -1.58$). Analysis of the fluctuation velocity distributions offers additional insights into the microscopic origins of the spectrum's characteristics. These findings help resolve the long-standing puzzle of flow localization in gravity-driven granular flows despite a constant shear stress-to-pressure ratio throughout the material. △ Less

Submitted 16 March, 2025; originally announced March 2025.

Principal component analysis for 5/2 fractional quantum Hall states

Authors: Zhe Zhang, Jiajie Qiao, Xiaoliang Wu, Shaowen Yu, Qin Jin

Abstract: For the special single-layer fractional quantum Hall system with a filling factor of 5/2, which has an even denominator, this paper uses principal component analysis (PCA) to study its behavior under the breaking of particle-hole symmetry. By introducing a model three-body potential to represent the mechanism of particle-hole symmetry breaking, the paper finds that the 5/2 system evolves into two… ▽ More For the special single-layer fractional quantum Hall system with a filling factor of 5/2, which has an even denominator, this paper uses principal component analysis (PCA) to study its behavior under the breaking of particle-hole symmetry. By introducing a model three-body potential to represent the mechanism of particle-hole symmetry breaking, the paper finds that the 5/2 system evolves into two types of special topological quantum states with non-Abelian statistics as the strength and direction of the three-body potential vary. The transition points of these states correspond to the particle-hole symmetric pure Coulomb interaction system. Our results validate the applicability of machine learning as a new research tool in fractional quantum Hall systems. Furthermore, machine learning directly analyzes the raw wave functions, without relying on prior empirical theoretical assumptions and models, making it applicable to a broader range of fractional quantum Hall systems experiencing phase transitions due to particle-hole symmetry breaking. △ Less

Submitted 5 March, 2025; originally announced March 2025.

Exploring Dual-Iron Atomic Catalysts for Efficient Nitrogen Reduction: A Comprehensive Study on Structural and Electronic Optimization

Authors: Zhe Zhang, Wenxin Ma, Jiajie Qiao, Xiaoliang Wu, Shaowen Yu, Weiye Hou, Xiang Huang, Rubin Huo, Hongbo Wu, Yusong Tu

Abstract: The nitrogen reduction reaction (NRR), as an efficient and green pathway for ammonia synthesis, plays a crucial role in achieving on-demand ammonia production. This study proposes a novel design concept based on dual-iron atomic sites and nitrogen-boron co-doped graphene catalysts, exploring their high efficiency in NRR. By modulating the N and B co-doped ratios, we found that Fe2N3B@G catalyst ex… ▽ More The nitrogen reduction reaction (NRR), as an efficient and green pathway for ammonia synthesis, plays a crucial role in achieving on-demand ammonia production. This study proposes a novel design concept based on dual-iron atomic sites and nitrogen-boron co-doped graphene catalysts, exploring their high efficiency in NRR. By modulating the N and B co-doped ratios, we found that Fe2N3B@G catalyst exhibited significant activity in the adsorption and hydrogenation of N2 molecules, especially with the lowest free energy (0.32 eV) on NRR distal pathway, showing its excellent nitrogen activation capability and NRR performance. The computed electron localization function, crystal orbital Hamiltonian population, electrostatic potential map revealed that the improved NRR kinetics of Fe2N3B@G catalyst derived by N3B co-doping induced optimization of Fe-Fe electronic environment, regulation of Fe-N bond strength, and the continuous electronic support during the N2 breakage and hydrogenation. In particular, machine learning molecular dynamics (MLMD) simulations were employed to verify the high activity of Fe2N3B@G catalyst in NRR, which reveal that Fe2N3B@G effectively regulates the electron density of Fe-N bond, ensuring the smooth generation and desorption of NH3 molecules and avoiding the competition with hydrogen evolution reaction (HER). Furthermore, the determined higher HER overpotential of Fe2N3B@G catalyst can effectively inhibit the HER and enhance the selectivity toward NRR. In addition, Fe2N3B@G catalyst also showed good thermal stability by MD simulations up to 500 K, offering its feasibility in practical applications. This study demonstrates the superior performance of Fe2N3B@G in nitrogen reduction catalysis, and provides theoretical guidance for atomic catalyst design by the co-doping strategy and in-deep electronic environment modulation. △ Less

Submitted 5 March, 2025; originally announced March 2025.

Monolithic On-Chip Phononic Chiral Anomalous Bulk States on LiNbO3 Thin-films

Authors: Zhe Li, Zhen-Hui Qin, Shu-Mao Wu, Chen-Bei Hao, Fan-Yun Pan, Hao Yan, Yi-Han He, Yan-Shen Zhou, Xue-Jun Yan, Si-Yuan Yu, Cheng He, Ming-Hui Lu, Yan-Feng Chen

Abstract: Phononic materials are crucial for developing efficient, robust mechanical waveguides with strong transport properties, enabling advances in sensing, signal processing, energy harvesting, and microfluidics. A key motivation is their integration into monolithic systems for on-chip applications. While topological phononic materials developed in the past decade offer unidirectional edge states immune… ▽ More Phononic materials are crucial for developing efficient, robust mechanical waveguides with strong transport properties, enabling advances in sensing, signal processing, energy harvesting, and microfluidics. A key motivation is their integration into monolithic systems for on-chip applications. While topological phononic materials developed in the past decade offer unidirectional edge states immune to backscattering, their integration requires large volumes to control localized small volumes' transport properties, limiting their efficiency and application in modern phononic circuits. The recently introduced chiral anomalous bulk states (CABSs) combine the advantages of topological materials with innovative boundary designs, overcoming transmission limitations and ensuring full material utilization for superior wave propagation. Here, we present the first on-chip monolithic CABS device integrated on a suspended LiNbO3 thin film. This breakthrough enables the creation of phononic waveguides with unmatched unidirectionality, low loss, and high transmission efficiency, seamlessly integrated with broadband piezoelectric transducers, and showcasing their potential for high-fidelity, broad-bandwidth microwave signal transmission. Additionally, we exploit the slow-wave characteristics of CABSs for delay lines and high-density signal processing. Tailoring wave propagation through boundary engineering opens a new paradigm for phononic/photonic device design, with implications across microelectronics, high-frequency communications, radar, and advanced sensing technologies. The work sets the stage for the future development of highly scalable, multifunctional, and robust phononic systems, unlocking new avenues for integrated acoustic technologies. △ Less

Submitted 25 February, 2025; originally announced February 2025.

Deployable Nanoelectromechanical Bound States in the Continuum Enabled by GHz Lamb Wave Phononic Crystals on LiNbO3 Thin Films

Authors: Sheng-Nan Liang, Zhen-Hui Qin, Shu-Mao Wu, Hua-Yang Chen, Si-Yuan Yu, Yan-Feng Chen

Abstract: Bound states in the continuum (BICs) are a fascinating class of eigenstates that trap energy within the continuum, enabling breakthroughs in ultra-low-threshold lasing, high-Q sensing, and advanced wave-matter interactions. However, their stringent symmetry requirements hinder practical integration, especially in acoustic and electromechanical systems where efficient mode excitation is challenging… ▽ More Bound states in the continuum (BICs) are a fascinating class of eigenstates that trap energy within the continuum, enabling breakthroughs in ultra-low-threshold lasing, high-Q sensing, and advanced wave-matter interactions. However, their stringent symmetry requirements hinder practical integration, especially in acoustic and electromechanical systems where efficient mode excitation is challenging. Here, we demonstrate deployable nanoelectromechanical quasi-BICs on suspended lithium niobate (LiNbO3) thin films, enabled by nanoscale Lamb wave phononic crystals (PnCs) operating at gigahertz frequencies. By exploiting the decoupling of symmetric (S) and antisymmetric (A) Lamb wave modes, we create a robust framework for BICs. Controlled mirror symmetry breaking induces targeted coupling between the S and A modes, resulting in quasi-BICs that preserve high-Q characteristics and can be excited by traveling waves, eliminating the need for specialized excitation schemes. Our approach enables the multiplexing of quasi-BIC resonators along a single transmission line, each corresponding to a unique frequency and spatial position. This work presents a scalable route for the on-chip integration of BICs, bridging the gap between theoretical concepts and practical nanoelectromechanical devices, and opening new avenues in advanced signal processing, high-precision sensing, and quantum acoustics. △ Less

Submitted 25 February, 2025; originally announced February 2025.

High Quality Single Crystal of Kitaev Spin Liquid Candidate Material RuBr3 Synthesized under High Pressure

Authors: Bowen Zhang, Xiangjun Li, Limin Yan, Wenbo Li, Nana Li, Jianfa Zhao, Xiaobing Liu, Shun-Li Yu, Zhiwei Hu, Wenge Yang, Runze Yu

Abstract: Kitaev quantum spin liquids have attracted significant attention in condensed matter physics over the past decade. To understand their emergent quantum phenomena, high-quality single crystals of substantial size are essential. Here, we report the synthesis of single crystals of the Kitaev quantum spin liquid candidate RuBr3, achieving millimeter-sized crystals through a self-flux method under high… ▽ More Kitaev quantum spin liquids have attracted significant attention in condensed matter physics over the past decade. To understand their emergent quantum phenomena, high-quality single crystals of substantial size are essential. Here, we report the synthesis of single crystals of the Kitaev quantum spin liquid candidate RuBr3, achieving millimeter-sized crystals through a self-flux method under high pressure and high temperature conditions. The crystals exhibit well-defined cleavage planes with a lustrous appearance. Transport characterizations exhibit a narrow band-gap semiconducting behavior with 0.13 eV and 0.11 eV band-gap in ab plane and along c axis, respectively. Magnetic measurement shows a transition to antiferromagnetic (AFM) state at approximately 29 K both in ab plane and along c axis. Notably, the Néel temperature increases to 34 K with an applied magnetic field of up to 7 T in the ab plane, but without any change along c axis. The large size and high quality of RuBr3 single crystals provide a valuable platform for investigating various interactions, particularly the Kitaev interaction, and for elucidating the intrinsic physical properties of Kitaev quantum spin liquids. △ Less

Submitted 17 February, 2025; originally announced February 2025.

Comments: Chinese Physics Letters accepted

Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs

Authors: A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu, Sushovan Dhara, Hsien-Lien Huang, Vijay Gopal Thirupakuzi Vangipuram, Jinwoo Hwang, Siddharth Rajan, Hongping Zhao

Abstract: This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al$_2$O$_3$ dielectrics on (010) $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The Al$_2$O$_3$/$β$-Ga$_2$O$_3$ MOSCAPs showed a strong dependence on Al$_2$O$_3$ deposition temperature. At 900$^\circ$C, reduced voltage hysteresis ($\sim$0.3 V) and improved reverse breakdown voltage (74.… ▽ More This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al$_2$O$_3$ dielectrics on (010) $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The Al$_2$O$_3$/$β$-Ga$_2$O$_3$ MOSCAPs showed a strong dependence on Al$_2$O$_3$ deposition temperature. At 900$^\circ$C, reduced voltage hysteresis ($\sim$0.3 V) and improved reverse breakdown voltage (74.5 V) were observed, with breakdown fields of 5.01 MV/cm in Al$_2$O$_3$ and 4.11 MV/cm in $β$-Ga$_2$O$_3$. At 650$^\circ$C, higher hysteresis ($\sim$3.44 V) and lower reverse breakdown voltage (38.8 V) were observed, with breakdown fields of 3.69 MV/cm in Al$_2$O$_3$ and 2.87 MV/cm in $β$-Ga$_2$O$_3$. However, forward breakdown fields improved from 5.62 MV/cm (900$^\circ$C) to 7.25 MV/cm (650$^\circ$C). STEM revealed improved crystallinity and sharper interfaces at 900$^\circ$C, enhancing reverse breakdown performance. For Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs, increasing Al composition ($x$ = 5.5\% to 9.2\%) reduced carrier concentration and improved reverse breakdown fields from 2.55 to 2.90 MV/cm in $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ and 2.41 to 3.13 MV/cm in Al$_2$O$_3$. Forward breakdown fields in Al$_2$O$_3$ improved from 5.0 to 5.4 MV/cm as Al composition increased. STEM confirmed compositional homogeneity and excellent stoichiometry of Al$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ layers. These findings highlight the robust electrical performance, high breakdown fields, and structural quality of Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs for high-power applications. △ Less

Submitted 22 May, 2025; v1 submitted 17 January, 2025; originally announced January 2025.

Anisotropic and tunable vortex topology in multiband iron-based superconductors

Authors: Si-Qi Yu, Wei Cheng, Chuang Li, Xiao-Hong Pan, Gang Xu, Fu-Chun Zhang, Xin Liu

Abstract: Building on the multiband nature of iron-based superconductors (FeSCs), we have uncovered pronounced anisotropy in Majorana vortex topology arising from the interaction between vortex orientation and multiple electronic topologies. This anisotropy manifests in two distinct vortex configurations: the z-vortex and x-vortex, oriented perpendicular and parallel to the Dirac axis (z-axis for FeSCs), re… ▽ More Building on the multiband nature of iron-based superconductors (FeSCs), we have uncovered pronounced anisotropy in Majorana vortex topology arising from the interaction between vortex orientation and multiple electronic topologies. This anisotropy manifests in two distinct vortex configurations: the z-vortex and x-vortex, oriented perpendicular and parallel to the Dirac axis (z-axis for FeSCs), respectively. The x-vortex exhibits a unique duality, displaying two distinct topological phase diagrams. One is strikingly simple, comprising only trivial and topological superconducting phases, and remains resilient to multiband entanglement. The other mirrors the z-vortex's complex diagram, featuring alternating trivial, topological crystalline and topological superconducting phases. Crucially, the former is exclusive to the x-vortex and supports unpaired Majorana vortices across a wide parameter range, even with Dirac nodes in electronic bands. Notably, uniaxial strain can modulate these x-vortex phases, enabling the x-vortex to support both stable Majorana vortices and rich exotic physics in a controllable manner. Moreover, we propose that the x-vortex offers promising advantages for developing iron-based superconducting quantum devices. Our findings introduce a novel paradigm in vortex topology within multiband superconducting systems, highlighting the x-vortex as a promising platform for exploring Majorana physics and advancing iron-based superconducting quantum technology. △ Less

Submitted 30 December, 2024; v1 submitted 26 December, 2024; originally announced December 2024.

Comments: 7 pages + 4 figures

Spatial Optical Simulator for Classical Statistical Models

Authors: Song-Tao Yu, Ming-Gen He, Sheng Fang, Youjin Deng, Zhen-Sheng Yuan

Abstract: Optical simulators for the Ising model have demonstrated great promise for solving challenging problems in physics and beyond. Here, we develop a spatial optical simulator for a variety of classical statistical systems, including the clock, $XY$, Potts, and Heisenberg models, utilizing a digital micromirror device composed of a large number of tiny mirrors. Spins, with desired amplitudes or phases… ▽ More Optical simulators for the Ising model have demonstrated great promise for solving challenging problems in physics and beyond. Here, we develop a spatial optical simulator for a variety of classical statistical systems, including the clock, $XY$, Potts, and Heisenberg models, utilizing a digital micromirror device composed of a large number of tiny mirrors. Spins, with desired amplitudes or phases of the statistical models, are precisely encoded by a patch of mirrors with a superpixel approach. Then, by modulating the light field in a sequence of designed patterns, the spin-spin interaction is realized in such a way that the Hamiltonian symmetries are preserved. We successfully simulate statistical systems on a fully connected network, with ferromagnetic or Mattis-type random interactions, and observe the corresponding phase transitions between the paramagnetic, and the ferromagnetic or spin-glass phases. Our results largely extend the research scope of spatial optical simulators and their versatile applications. △ Less

Submitted 17 December, 2024; originally announced December 2024.

Journal ref: Phys.Rev.Lett.133,237101(2024)

Surface molecular engineering to enable processing of sulfide solid electrolytes in humid ambient air

Authors: Mengchen Liu, Jessica J. Hong, Elias Sebti, Ke Zhou, Shen Wang, Shijie Feng, Tyler Pennebaker, Zeyu Hui, Qiushi Miao, Ershuang Lu, Nimrod Harpak, Sicen Yu, Jianbin Zhou, Jeong Woo Oh, Min-Sang Song, Jian Luo, Raphaële J. Clément, Ping Liu

Abstract: Sulfide solid state electrolytes are promising candidates to realize all solid state batteries due to their superior ionic conductivity and excellent ductility. However, their hypersensitivity to moisture requires processing environments that are not compatible with todays lithium ion battery manufacturing infrastructure. Herein, we present a reversible surface modification strategy that enables t… ▽ More Sulfide solid state electrolytes are promising candidates to realize all solid state batteries due to their superior ionic conductivity and excellent ductility. However, their hypersensitivity to moisture requires processing environments that are not compatible with todays lithium ion battery manufacturing infrastructure. Herein, we present a reversible surface modification strategy that enables the processability of sulfide SSEs under humid ambient air. We demonstrate that a long chain alkyl thiol, undecanethiol, is chemically compatible with the electrolyte with negligible impact on its ion conductivity. Importantly, the thiol modification extends the amount of time that the sulfide SSE can be exposed to air with 33 percent relative humidity with limited degradation of its structure while retaining a conductivity of above 1 mS per cm for up to 2 days, a more than 100 fold improvement in protection time over competing approaches. Experimental and computational results reveal that the thiol group anchors to the SSE surface, while the hydrophobic hydrocarbon tail provides protection by repelling water. The modified Li6PS5Cl SSE maintains its function after exposure to ambient humidity when implemented in a Li0.5In LiNi0.8Co0.1Mn0.1O2 ASSB. The proposed protection strategy based on surface molecular interactions represents a major step forward towards cost competitive and energy efficient sulfide SSE manufacturing for ASSB applications. △ Less

Submitted 5 December, 2024; originally announced December 2024.

Comments: 38 pages, 6 figures

Programmable lattices for non-Abelian topological photonics and braiding

Authors: Gyunghun Kim, Jensen Li, Xianji Piao, Namkyoo Park, Sunkyu Yu

Abstract: Non-Abelian physics, originating from noncommutative sequences of operations, unveils novel topological degrees of freedom for advancing band theory and quantum computation. In photonics, significant efforts have been devoted to developing reconfigurable non-Abelian platforms, serving both as classical testbeds for non-Abelian quantum phenomena and as programmable systems that harness topological… ▽ More Non-Abelian physics, originating from noncommutative sequences of operations, unveils novel topological degrees of freedom for advancing band theory and quantum computation. In photonics, significant efforts have been devoted to developing reconfigurable non-Abelian platforms, serving both as classical testbeds for non-Abelian quantum phenomena and as programmable systems that harness topological complexities. Here we establish topological spinor lattices for non-Abelian programmable photonics. We design a building block for reconfigurable unitary coupling between pseudospin resonances, achieving a universal set of rotation gates through coupling along the unit cell boundary. The lattice assembly of our building blocks enables the emulation of the extended quantum Hall family across various eigenspinor bases. Particularly, we reveal the emergence of a non-Abelian interface even when the bulks are Abelian, which allows the topologically trivial engineering of topologically protected edge states. We also define the braid group for pseudospin observables, demonstrating non-Abelian braiding operations and the Yang-Baxter relations. Our results pave the way for realizing a reconfigurable testbed for a wide class of Abelian and non-Abelian topological phenomena and braiding operations. △ Less

Submitted 1 October, 2024; originally announced October 2024.

Comments: 44 pages, 4 figures and 8 supplementary figures

Magnon-mediated exciton-exciton interaction in a van der Waals antiferromagnet

Authors: Biswajit Datta, Pratap Chandra Adak, Sichao Yu, Agneya V. Dharmapalan, Siedah J. Hall, Anton Vakulenko, Filipp Komissarenko, Egor Kurganov, Jiamin Quan, Wei Wang, Kseniia Mosina, Zdeněk Sofer, Dimitar Pashov, Mark van Schilfgaarde, Swagata Acharya, Akashdeep Kamra, Matthew Y. Sfeir, Andrea Alù, Alexander B. Khanikaev, Vinod M. Menon

Abstract: Excitons are fundamental excitations that govern the optical properties of semiconductors. Interacting excitons can lead to various emergent phases of matter and large nonlinear optical responses. In most semiconductors, excitons interact via exchange interaction or phase space filling. Correlated materials that host excitons coupled to other degrees of freedom offer hitherto unexplored pathways f… ▽ More Excitons are fundamental excitations that govern the optical properties of semiconductors. Interacting excitons can lead to various emergent phases of matter and large nonlinear optical responses. In most semiconductors, excitons interact via exchange interaction or phase space filling. Correlated materials that host excitons coupled to other degrees of freedom offer hitherto unexplored pathways for controlling these interactions. Here, we demonstrate magnon-mediated excitonic interactions in CrSBr, an antiferromagnetic semiconductor. This interaction manifests as the dependence of exciton energy on exciton density via a magnonic adjustment of the spin canting angle. Our study demonstrates the emergence of quasiparticle-mediated interactions in correlated quantum materials, leading to large nonlinear optical responses and potential device concepts such as magnon-mediated quantum transducers. △ Less

Submitted 27 September, 2024; originally announced September 2024.

Comments: 33 pages, 14 figures

Journal ref: Nature Materials (2025)

Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K

Authors: Jie Zhou, Daniel Vincent, Sudip Acharya, Solomon Ojo, Alireza Abrand, Yang Liu, Jiarui Gong, Dong Liu, Samuel Haessly, Jianping Shen, Shining Xu, Yiran Li, Yi Lu, Hryhorii Stanchu, Luke Mawst, Bruce Claflin, Parsian K. Mohseni, Zhenqiang Ma, Shui-Qing Yu

Abstract: Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EE… ▽ More Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers. △ Less

Submitted 15 September, 2024; originally announced September 2024.

Comments: 5 pages, 5 figures. Supplementary Information included

Moiré exciton polaron engineering via twisted hBN

Authors: Minhyun Cho, Biswajit Datta, Kwanghee Han, Saroj B. Chand, Pratap Chandra Adak, Sichao Yu, Fengping Li, Kenji Watanabe, Takashi Taniguchi, James Hone, Jeil Jung, Gabriele Grosso, Young Duck Kim, Vinod M. Menon

Abstract: Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moiré patterns from twisted hexagonal boron… ▽ More Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moiré patterns from twisted hexagonal boron nitride (thBN) onto monolayer MoSe2 and investigate the resulting changes in the exciton properties. We confirm the imprinting of moiré patterns on monolayer MoSe2 via proximity using Kelvin probe force microscopy (KPFM) and hyperspectral photoluminescence (PL) mapping. By developing a technique to create large ferroelectric domain sizes ranging from 1 μm to 8.7 μm, we achieve unprecedented potential modulation of 387 +- 52 meV. We observe the formation of exciton polarons due to charge redistribution caused by the antiferroelectric moiré domains and investigate the optical property changes induced by the moiré pattern in monolayer MoSe2 by varying the moiré pattern size down to 110 nm. Our findings highlight the potential of twisted hBN as a platform for controlling the optical and electronic properties of 2D materials for optoelectronic and valleytronic applications. △ Less

Submitted 11 September, 2024; originally announced September 2024.

Observation of superconducting diode effect in antiferromagnetic Mott insulator $α$-RuCl$_3$

Authors: Jiadian He, Yifan Ding, Xiaohui Zeng, Yiwen Zhang, Yanjiang Wang, Peng Dong, Xiang Zhou, Yueshen Wu, Kecheng Cao, Kejing Ran, Jinghui Wang, Yulin Chen, Kenji Watanabe, Takashi Taniguchi, Shun-Li Yu, Jian-Xin Li, Jinsheng Wen, Jun Li

Abstract: Nonreciprocal superconductivity, also called as superconducting diode effect that spontaneously breaks time-reversal symmetry, is characterized by asymmetric critical currents under opposite applied current directions. This distinct state unveils a rich ore of intriguing physical properties, particularly in the realm of nanoscience application of superconductors. Towards the experimental realizati… ▽ More Nonreciprocal superconductivity, also called as superconducting diode effect that spontaneously breaks time-reversal symmetry, is characterized by asymmetric critical currents under opposite applied current directions. This distinct state unveils a rich ore of intriguing physical properties, particularly in the realm of nanoscience application of superconductors. Towards the experimental realization of superconducting diode effect, the construction of two-dimensional heterostructures of magnets and $s$-wave superconductors is considered to be a promising pathway. In this study, we present our findings of superconducting diode effect manifested in the magnetic Mott insulator $α$-RuCl$_3$. This phenomenon is induced by the proximity effect within a van der Waals heterostructure, consisting of thin $α$-RuCl$_3$/NbSe$_2$ flakes. Through transport property measurements, we have confirmed a weak superconducting gap of 0.2 meV, which is significantly lower than the intrinsic gap of NbSe$_2$(1.2 meV). Upon the application of a weak magnetic field below 70 mT, we observed an asymmetry in the critical currents under positive and negative applied currents. This observation demonstrates a typical superconducting diode effect in the superconducting $α$-RuCl$_3$. The superconducting diode effect and nonreciprocal resistance are observed exclusively when the magnetic field is aligned out-of-plane. This suggests that an Ising-type spin-orbit coupling in the superconducting $α$-RuCl$_3$ may be responsible for the mechanism. Our findings furnish a platform for the exploration of superconducting diode effect via the artificial construction of heterostructures. △ Less

Submitted 6 September, 2024; originally announced September 2024.

Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy

Authors: Yang Liu, Jiarui Gong, Sudip Acharya, Yiran Lia, Alireza Abrand, Justin M. Rudie, Jie Zhou, Yi Lu, Haris Naeem Abbasi, Daniel Vincent, Samuel Haessly, Tsung-Han Tsai, Parsian K. Mohseni, Shui-Qing Yu, Zhenqiang Ma

Abstract: GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room temperature lasing. The recently demonstrated semiconductor grafting technique provides a viable approach towards AlGaAs/GeSn p-i-n heterojunctions with better electro… ▽ More GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room temperature lasing. The recently demonstrated semiconductor grafting technique provides a viable approach towards AlGaAs/GeSn p-i-n heterojunctions with better electron confinement and high-quality interfaces, promising for room temperature electrically pumped GeSn laser devices. Therefore, understanding and quantitatively characterizing the band alignment in this grafted heterojunction is crucial. In this study, we explore the band alignment in the grafted monocrystalline Al0.3Ga0.7As /Ge0.853Sn0.147 p-i-n heterojunction. We determined the bandgap values of AlGaAs and GeSn to be 1.81 eV and 0.434 eV by photoluminescence measurements, respectively. We further conducted X-ray photoelectron spectroscopy measurements and extracted a valence band offset of 0.19 eV and a conduction band offset of 1.186 eV. A Type-I band alignment was confirmed which effectively confining electrons at the AlGaAs/GeSn interface. This study improves our understanding of the interfacial band structure in grafted AlGaAs/GeSn heterostructure, providing experimental evidence of the Type-I band alignment between AlGaAs and GeSn, and paving the way for their application in laser technologies. △ Less

Submitted 29 August, 2024; originally announced August 2024.

Comments: 18 pages, 4 figures

Unlocking the Potential of Photoexcited Molecular Electron Spins for Room Temperature Quantum Information Processing

Authors: Kuan-Cheng Chen, Alberto Collauto, Ciarán J. Rogers, Shang Yu, Mark Oxborrow, Max Attwood

Abstract: Future information processing technologies like quantum memory devices have the potential to store and transfer quantum states to enable quantum computing and networking. A central consideration in practical applications for such devices is the nature of the light-matter interface which determines the storage state density and efficiency. Here, we employ an organic radical, $α$,$γ$-bisdiphenylene-… ▽ More Future information processing technologies like quantum memory devices have the potential to store and transfer quantum states to enable quantum computing and networking. A central consideration in practical applications for such devices is the nature of the light-matter interface which determines the storage state density and efficiency. Here, we employ an organic radical, $α$,$γ$-bisdiphenylene-$β$-phenylallyl (BDPA) doped into an o-terphenyl host to explore the potential for using tuneable and high-performance molecular media in microwave-based quantum applications. We demonstrate that this radical system exhibits millisecond-long spin-lattice relaxation and microsecond-long phase memory times at room temperature, while also having the capability to generate an oscillating spin-polarized state using a co-dissolved photo-activated tetraphenylporphyrin moiety, all enabled by using a viscous liquid host. This latest system builds upon collective wisdom from previous molecules-for-quantum literature by combining careful host matrix selection, with dynamical decoupling, and photoexcited triplet-radical spin polarisation to realise a versatile and robust quantum spin medium. △ Less

Submitted 29 August, 2024; originally announced August 2024.

Novel ground states and emergent quantum many-body scars in a two-species Rydberg atom array

Authors: Lei-Yi-Nan Liu, Shun-Yao Yu, Shi-Rong Peng, Jie Sheng, Su Yi, Peng Xu, Shou-Shu Gong, Tao Shi, Jian Cui

Abstract: Rydberg atom array has been established as one appealing platform for quantum simulation and quantum computation. Recent experimental development of trapping and controlling two-species atoms using optical tweezer arrays has brought more complex interactions in this game, enabling much versatile novel quantum states and phenomena to emerge and thus leading to a growing need for both theoretical an… ▽ More Rydberg atom array has been established as one appealing platform for quantum simulation and quantum computation. Recent experimental development of trapping and controlling two-species atoms using optical tweezer arrays has brought more complex interactions in this game, enabling much versatile novel quantum states and phenomena to emerge and thus leading to a growing need for both theoretical and numerical investigations in this regard. In this paper we systematically calculate the ground state phase diagram of alternating two-species atom array and find some novel quantum states that cannot exist in traditional cold-atom platforms, for instance the period $4$ product state $|1100\rangle^{\otimes m}$, the period $6$ product state $|111000\rangle^{\otimes m}$ and order-disorder separation phase. We also confirm the existence of floating phase, however, in this system it has to be described by two interacting bosonic fields whereas that in the single species Rydberg atom array can be understood as free bosons. More interestingly, in the quench dynamics we discover a type of new quantum many-body scar distinct from that previous found in single species atoms which is explained by low-energy effective theory of the PXP model. Instead, the underlying physics of the newly found quantum many-body scar can be described by a perturbation theory spanning the whole energy spectrum. Detailed analysis on how to experimentally prepare these states and observe the phenomena is provided. Numerical evidence shows that the proposed scheme is robust against typical experimentally relevent imperfections and thus it is implementable. Our work opens new avenue for quantum simulating novel quantum many-body states both in and out of equilibrium arising from the interplay of competing interactions of different atom species and quantum fluctuations. △ Less

Submitted 28 August, 2024; originally announced August 2024.

Comments: 19 pages, 19 figures

AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$

Authors: Yang Liu, Yiran Li, Sudip Acharya, Jie Zhou, Jiarui Gong, Alireza Abrand, Yi Lu, Daniel Vincent, Samuel Haessly, Parsian K. Mohseni, Shui-Qing Yu, Zhenqiang Ma

Abstract: This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra-thin Al$_2$O$_3$ as a quantum tunneling layer and enhancing interfacial double-side passivation, we achieved a heterostructure with a substantial 1.1… ▽ More This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra-thin Al$_2$O$_3$ as a quantum tunneling layer and enhancing interfacial double-side passivation, we achieved a heterostructure with a substantial 1.186 eV conduction band barrier between AlGaAs and GeSn, along with a low interfacial density of states. The diode demonstrated impressive electrical characteristics with high uniformity, including a mean ideality factor of 1.47 and a mean rectification ratio of 2.95E103 at +/-2 V across 326 devices, indicating high-quality device fabrication. Comprehensive electrical characterizations, including C-V and I-V profiling, affirm the diode's capability to provide robust electrical confinement and efficient carrier injection. These properties make the Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn DHS a promising candidate for next-generation electrically pumped GeSn lasers, potentially operable at higher temperatures. Our results provide a viable pathway for further advancements in various GeSn-based devices. △ Less

Submitted 15 August, 2024; originally announced August 2024.

Comments: 5 pages, 4 figures

Variational Monte Carlo Study of the 1/9 Magnetization Plateau in Kagome Antiferromagnets

Authors: Li-Wei He, Shun-Li Yu, Jian-Xin Li

Abstract: Motivated by very recent experimental observations of the 1/9 magnetization plateaus in YCu$_3$(OH)$_{6+x}$Br$_{3-x}$ and YCu$_3$(OD)$_{6+x}$Br$_{3-x}$, our study delves into the magnetic field-induced phase transitions in the nearest-neighbor antiferromagnetic Heisenberg model on the kagome lattice using the variational Monte Carlo technique. We uncover a phase transition from a zero-field Dirac… ▽ More Motivated by very recent experimental observations of the 1/9 magnetization plateaus in YCu$_3$(OH)$_{6+x}$Br$_{3-x}$ and YCu$_3$(OD)$_{6+x}$Br$_{3-x}$, our study delves into the magnetic field-induced phase transitions in the nearest-neighbor antiferromagnetic Heisenberg model on the kagome lattice using the variational Monte Carlo technique. We uncover a phase transition from a zero-field Dirac spin liquid to a field-induced magnetically disordered phase that exhibits the 1/9 magnetization plateau. Through a comprehensive analysis encompassing the magnetization distribution, spin correlations, chiral order parameter, topological entanglement entropy, ground-state degeneracy, Chern number and excitation spectrum, we pinpoint the phase associated with this magnetization plateau as a chiral $\mathbb{Z}_3$ topological quantum spin liquid and elucidate its diverse physical properties. △ Less

Submitted 30 July, 2024; originally announced July 2024.

Comments: Accepted by Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 133, 096501 (2024)

Comparison of Short-Range Order in GeSn Grown by Molecular Beam Epitaxy and Chemical Vapor Deposition

Authors: Shang Liu, Yunfan Liang, Haochen Zhao, Nirosh M. Eldose, Jin-Hee Bae, Omar Concepcion, Xiaochen Jin, Shunda Chen, Ilias Bikmukhametov, Austin Akey, Cory T. Cline, Alejandra Cuervo Covian, Xiaoxin Wang, Tianshu Li, Yuping Zeng, Dan Buca, Shui-Qing Yu, Gregory J. Salamo, Shengbai Zhang, Jifeng Liu

Abstract: Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom pr… ▽ More Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom probe tomography. An $\sim$15% stronger preference for Sn-Sn 1$^{st}$ nearest neighbor (1NN) is observed in MBE GeSn than CVD GeSn for both thin film and quantum well samples with Sn composition ranging from 7 to 20%. Interestingly, samples grown by different deposition tools under the same method (either MBE or CVD) showed remarkable consistency in Sn-Sn 1NN SRO, while MBE vs. CVD showed clear differences. Supported by theoretical modeling, we consider that this difference in SRO originates from the impact of surface termination, where MBE surfaces are exposed to ultrahigh vacuum while CVD surfaces are terminated by H to a good extent. This finding not only suggests engineering surface termination or surfactants during the growth as a potential approach to control SRO in GeSn, but also provides insight into the underlying reasons for very different growth temperature between MBE and CVD that directly impact the strain relaxation behavior. △ Less

Submitted 2 July, 2024; originally announced July 2024.

Majorana qubit readout by a point-contact detector under finite bias voltages

Authors: Huizi Xie, Sirui Yu, Hong Mao, Jinshuang Jin

Abstract: In this work we revisit the problem of a Majorana box qubit (MBQ) readout by a point-contact (PC) detector. The logic states of the MBQ are associated with the combined fermion parities of the MBQ and its tunnel-coupled quantum dot, which is measured by a PC detector. Beyond the existing studies on limiting bias voltage regimes, we analyze the steady-state current and the current power spectrum ac… ▽ More In this work we revisit the problem of a Majorana box qubit (MBQ) readout by a point-contact (PC) detector. The logic states of the MBQ are associated with the combined fermion parities of the MBQ and its tunnel-coupled quantum dot, which is measured by a PC detector. Beyond the existing studies on limiting bias voltage regimes, we analyze the steady-state current and the current power spectrum across all bias voltages. Our results indicate that the MBQ readout via the parity-dependent detector current is effective only at low bias voltage regime and requires the dot energy level to be off-resonance with the Majorana qubit. In contrast, the current power spectrum allows MBQ readout through the parity-dependent Rabi oscillation peak signals for arbitrary bias voltages, without restrictions on the dot energy level. Particularly, with focus on the MBQ measurement visibility, we analyze the peak-to-pedestal ratio for each characteristic peak (associated with each logic state of the qubit) and the signal-to-noise ratio of the two peaks. By examining these two metrics, we identify the optimal bias voltage window for the PC detector at low temperature limit. △ Less

Submitted 10 February, 2025; v1 submitted 16 June, 2024; originally announced June 2024.

Comments: 7 pages, 4 figures

Journal ref: PhysRevB.111.075412 (2025)

Monolithic Germanium Tin on Si Avalanche Photodiodes

Authors: Justin Rudie, Sylvester Amoah, Xiaoxin Wang, Rajesh Kumar, Grey Abernathy, Steven Akwabli, Perry C. Grant, Jifeng Liu, Baohua Li, Wei Du, Shui-Qing Yu

Abstract: We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before ava… ▽ More We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K. △ Less

Submitted 22 May, 2024; originally announced May 2024.

Comments: 8 pages, 5 figures, invited paper

Realization of Kagome Kondo lattice

Authors: Boqin Song, Yuyang Xie, Wei-Jian Li, Hui Liu, Qinghua Zhang, Jian-gang Guo, Lin Zhao, Shun-Li Yu, Xingjiang Zhou, Xiaolong Chen, Tianping Ying

Abstract: The Kondo lattice, describing a grid of the local magnetic moments coupling to itinerant electrons, is a fertile ground of strongly correlated states in condensed matter physics. While the Kagome lattice has long been predicted to host Kondo physics with exotic magnetism and nontrivial topology, no experimental realization has been achieved. Here, we report the discovery of CsCr6Sb6, a van der Waa… ▽ More The Kondo lattice, describing a grid of the local magnetic moments coupling to itinerant electrons, is a fertile ground of strongly correlated states in condensed matter physics. While the Kagome lattice has long been predicted to host Kondo physics with exotic magnetism and nontrivial topology, no experimental realization has been achieved. Here, we report the discovery of CsCr6Sb6, a van der Waals-like Kagome Kondo lattice featuring extremely flat, isolated bands at the Fermi level (EF) that composed entirely of Cr-3d electrons. We observe heavy fermions with the effective mass over 100 times greater than those of its vanadium counterpart. We also observe Kondo insulating behavior in an ultra-low carrier density of 1019 cm-3 and dimensionality-induced Kondo breakdown. More interestingly, the frustrated magnetism observed in the bulk give way to a hidden A-type antiferromagnetic ordering in few layers, in sharp contrast to the common sense of weakened magnetism with thinning. The realization of Kondo physics in Kagome lattice opens avenues for exploring diverse quantum criticalities in a strongly-correlated frustrated system. △ Less

Submitted 17 November, 2024; v1 submitted 18 April, 2024; originally announced April 2024.

Comments: 13 pages, 4 figures

Journal ref: Nat Commun 16, 5643 (2025)

Surface region band enhancement in noble gas adsorption assisted ARPES on kagome superconductor RbV3Sb5

Authors: Cao Peng, Yiwei Li, Xu Chen, Shenghao Dai, Zewen Wu, Chunlong Wu, Qiang Wan, Keming Zhao, Renzhe Li, Shangkun Mo, Dingkun Qin, Shuming Yu, Hao Zhong, Shengjun Yuan, Jiangang Guo, Nan Xu

Abstract: Electronic states near surface regions can be distinct from bulk states, which are paramount in understanding various physical phenomena occurring at surfaces and in applications in semiconductors, energy, and catalysis. Here, we report an abnormal surface region band enhancement effect in angle-resolved photoemission spectroscopy on kagome superconductor RbV3Sb5, by depositing noble gases with fi… ▽ More Electronic states near surface regions can be distinct from bulk states, which are paramount in understanding various physical phenomena occurring at surfaces and in applications in semiconductors, energy, and catalysis. Here, we report an abnormal surface region band enhancement effect in angle-resolved photoemission spectroscopy on kagome superconductor RbV3Sb5, by depositing noble gases with fine control. In contrast to conventional surface contamination, the intensity of surface region Sb band can be enhanced more than three times with noble gas adsorption. In the meantime, a hole-dope effect is observed for the enhanced surface region band, with other bands hardly changing. The doping effect is more pronounced with heavier noble gases. We propose that noble gas atoms selectively fill into alkali metal vacancy sites on the surface, which improves the surface condition, boosts surface region bands, and effectively dopes it with the Pauli repulsion mechanism. Our results provide a novel and reversible way to improve surface conditions and tune surface region bands by controlled surface noble gas deposition. △ Less

Submitted 17 March, 2024; originally announced March 2024.

Comments: 17 pages,4 figures

Journal ref: Phys. Rev. B 109, 115415 (2024)

He-4 monolayer on Graphene: a Quantum Monte Carlo study

Authors: Siyuan Yu, Massimo Boninsegni

Abstract: We revisit the problem of adsorption of a single He-4 layer on graphene, focusing on the commensurate C1/3 crystalline phase, specifically on whether it may possess a nonzero superfluid response, and on the existence of superfluid phases, either (metastable) liquid or vacancy-doped crystalline. We make use of canonical Quantum Monte Carlo simulations at zero and finite temperature, based on a real… ▽ More We revisit the problem of adsorption of a single He-4 layer on graphene, focusing on the commensurate C1/3 crystalline phase, specifically on whether it may possess a nonzero superfluid response, and on the existence of superfluid phases, either (metastable) liquid or vacancy-doped crystalline. We make use of canonical Quantum Monte Carlo simulations at zero and finite temperature, based on a realistic microscopic model of the system. Our results confirm the absence of any superfluid response in the commensurate crystal, and that no thermodynamically stable uniform phase exists at lower coverage. No evidence of a possibly long-lived, metastable superfluid phase at C1/3 coverage is found. Altogether, the results of ground-state projection methods and finite-temperature simulations are entirely consistent. △ Less

Submitted 23 August, 2024; v1 submitted 4 March, 2024; originally announced March 2024.

Comments: Replaced with published version

Journal ref: Commun. Theor. Phys. 76, 095701 (2024)

Observation of Magnon Damping Minimum Induced by Kondo Coupling in a van der Waals Ferromagnet Fe$_{3-x}$GeTe$_{2}$

Authors: Song Bao, Junsen Wang, Shin-ichiro Yano, Yanyan Shangguan, Zhentao Huang, Junbo Liao, Wei Wang, Yuan Gao, Bo Zhang, Shufan Cheng, Hao Xu, Zhao-Yang Dong, Shun-Li Yu, Wei Li, Jian-Xin Li, Jinsheng Wen

Abstract: In heavy-fermion systems with $f$ electrons, there is an intricate interplay between Kondo screening and magnetic correlations, which can give rise to various exotic phases. Recently, similar interplay appears to also occur in $d$-electron systems, but the underlying mechanism remains elusive. Here, using inelastic neutron scattering, we investigate the temperature evolution of the low-energy spin… ▽ More In heavy-fermion systems with $f$ electrons, there is an intricate interplay between Kondo screening and magnetic correlations, which can give rise to various exotic phases. Recently, similar interplay appears to also occur in $d$-electron systems, but the underlying mechanism remains elusive. Here, using inelastic neutron scattering, we investigate the temperature evolution of the low-energy spin waves in a metallic van der Waals ferromagnet Fe$_{3-x}$GeTe$_{2}$ (Curie temperature $T_{\rm C}\sim160$ K), where the Kondo-lattice behavior emerges in the ferromagnetic phase below a characteristic temperature $T^*\sim90$ K. We observe that the magnon damping constant diverges at both low and high temperatures, exhibiting a minimum coincidentally around $T^*$. Such an observation is analogous to the resistivity minimum as due to the single-impurity Kondo effect. This unusual behavior is described by a formula that combines logarithmic and power terms, representing the dominant contributions from Kondo screening and thermal fluctuations, respectively. Furthermore, we find that the magnon damping increases with momentum below $T_{\rm C}$. These findings can be explained by considering spin-flip electron-magnon scattering, which serves as a magnonic analog of the Kondo-impurity scattering, and thus provides a measure of the Kondo coupling through magnons. Our results provide critical insights into how Kondo coupling manifests itself in a system with magnetic ordering and shed light on the coexistence of and interplay between magnetic order and Kondo effect in itinerant 3$d$-electron systems. △ Less

Submitted 26 December, 2023; originally announced December 2023.

Comments: 8 pages, 4 figures

Direct observation of topological magnon polarons in a multiferroic material

Authors: Song Bao, Zhao-Long Gu, Yanyan Shangguan, Zhentao Huang, Junbo Liao, Xiaoxue Zhao, Bo Zhang, Zhao-Yang Dong, Wei Wang, Ryoichi Kajimoto, Mitsutaka Nakamura, Tom Fennell, Shun-Li Yu, Jian-Xin Li, Jinsheng Wen

Abstract: Magnon polarons are novel elementary excitations possessing hybrid magnonic and phononic signatures, and are responsible for many exotic spintronic and magnonic phenomena. Despite long-term sustained experimental efforts in chasing for magnon polarons, direct spectroscopic evidence of their existence is hardly observed. Here, we report the direct observation of magnon polarons using neutron spectr… ▽ More Magnon polarons are novel elementary excitations possessing hybrid magnonic and phononic signatures, and are responsible for many exotic spintronic and magnonic phenomena. Despite long-term sustained experimental efforts in chasing for magnon polarons, direct spectroscopic evidence of their existence is hardly observed. Here, we report the direct observation of magnon polarons using neutron spectroscopy on a multiferroic Fe$_{2}$Mo$_{3}$O$_{8}$ possessing strong magnon-phonon coupling. Specifically, below the magnetic ordering temperature, a gap opens at the nominal intersection of the original magnon and phonon bands, leading to two separated magnon-polaron bands. Each of the bands undergoes mixing, interconverting and reversing between its magnonic and phononic components. We attribute the formation of magnon polarons to the strong magnon-phonon coupling induced by Dzyaloshinskii-Moriya interaction. Intriguingly, we find that the band-inverted magnon polarons are topologically nontrivial. These results uncover exotic elementary excitations arising from the magnon-phonon coupling, and offer a new route to topological states by considering hybridizations between different types of fundamental excitations. △ Less

Submitted 26 December, 2023; originally announced December 2023.

Comments: 11 pages, 5 figures, published in Nature Communications

Journal ref: Nature Communications 14, 6093 (2023)

Observation of a 1/3 Magnetisation Plateau Phase as Evidence for the Kitaev Interaction in a Honeycomb-Lattice Antiferromagnet

Authors: Yanyan Shangguan, Song Bao, Zhao-Yang Dong, Ning Xi, Yi-Peng Gao, Zhen Ma, Wei Wang, Zhongyuan Qi, Shuai Zhang, Zhentao Huang, Junbo Liao, Xiaoxue Zhao, Bo Zhang, Shufan Cheng, Hao Xu, Dehong Yu, Richard A. Mole, Naoki Murai, Seiko Ohira-Kawamura, Lunhua He, Jiazheng Hao, Qing-Bo Yan, Fengqi Song, Wei Li, Shun-Li Yu , et al. (2 additional authors not shown)

Abstract: Fractional magnetisation plateaus, in which the magnetisation is pinned at a fraction of its saturated value within a range of external magnetic field, are spectacular macroscopic manifestations of the collective quantum behaviours. One prominent example of the plateau phase is found in spin-1/2 triangular-lattice antiferromagnets featuring strong geometrical frustration, and is often interpreted… ▽ More Fractional magnetisation plateaus, in which the magnetisation is pinned at a fraction of its saturated value within a range of external magnetic field, are spectacular macroscopic manifestations of the collective quantum behaviours. One prominent example of the plateau phase is found in spin-1/2 triangular-lattice antiferromagnets featuring strong geometrical frustration, and is often interpreted as quantum-fluctuation-stabilised state in magnetic field via the "order-by-disorder" mechanism. Here, we observe an unprecedented 1/3 magnetisation plateau between 5.2 and 7.4 T at 2 K in a spin-1 antiferromagnet Na$_3$Ni$_2$BiO$_6$ with a honeycomb lattice, where conventionally no geometrical frustration is anticipated. By carrying out elastic neutron scattering measurements, we propose the spin structure of the plateau phase to be an unusual partial spin-flop ferrimagnetic order, transitioning from the zigzag antiferromagnetic order in zero field. Our theoretical calculations show that the plateau phase is stabilised by the bond-anisotropic Kitaev interaction. These results provide a new paradigm for the exploration of rich quantum phases in frustrated magnets and exotic Kitaev physics in high-spin systems. △ Less

Submitted 26 December, 2023; originally announced December 2023.

Comments: Submitted version, 10 pages, 5 figures. Final version has been published in Nature Physics

Journal ref: Nature Physics 19, 1883-1889 (2023)

Third order nonlinear transport properties in topological chiral antiferromagnetic semimetal CoNb3S6

Authors: Junjian Mi, Jialin Li, Miaocong Li, Sheng Xu, Shuang Yu, Zheng Li, Xinyi Fan, Huanfeng Zhu, Qian Tao, Linjun Li, Zhuan Xu

Abstract: The topology between Bloch states in reciprocal space has attracted tremendous attention in recent years. The quantum geometry of the band structure is composed of quantum metric as real part and berry curvature as imaginary part. While the Berry curvature, the Berry curvature dipole and Berry connection polarizability have been recently revealed by the first order anomalous hall, second order and… ▽ More The topology between Bloch states in reciprocal space has attracted tremendous attention in recent years. The quantum geometry of the band structure is composed of quantum metric as real part and berry curvature as imaginary part. While the Berry curvature, the Berry curvature dipole and Berry connection polarizability have been recently revealed by the first order anomalous hall, second order and third order nonlinear Hall effect respectively, the quantum metric induced second order nonlinear transverse and longitudinal response in topological antiferromagnetic material MnBi2Te4 was only very recently reported. Here we demonstrate the similar third order nonlinear transport properties in the topological antiferromagnetic CoNb3S6. We observed that the third order nonlinear longitudinal V3ω xx increase significantly at the antiferromagnetic transition temperature TN ~ 29 K, which was probably induced by the quantum metric without time-reversal symmetry or inversion symmetry. Besides, temperature-dependent nonlinear behaviour was observed in the first order I-V curve below the Neel temperature TN, which was not reported in MnBi2Te4 and FeSn. Such nonlinear I-V behaviour hints for the possible existence of Charge Density Wave (CDW) state, which has been discovered in its sister material FeNb3S6. Simultaneously, two plateaus in the third order nonlinear longitudinal V3ω xx~ I^ω curve are observed, which is also speculated to be related with the possible CDW state. However, the genuine mechanism for the first order nonlinear I-V and its relation with the third order nonlinear transport call for more experimental investigations and theoretical interpretation. Our work provides a way to explore third harmonic nonlinear transport and interaction with magnetic order and CDW. △ Less

Submitted 10 December, 2023; originally announced December 2023.

Comments: 16pages,4figures

Macroscopically Self-Aligned and Chiralized Carbon Nanotubes: From Filtration to Innovation

Authors: Jacques Doumani, Keshav Zahn, Shengjie Yu, Gustavo Rodriguez Barrios, Somesh Sasmal, Rikuta Kikuchi, T. Elijah Kritzell, Hongjing Xu, Andrey Baydin, Junichiro Kono

Abstract: Because of their natural one-dimensional (1D) structure combined with intricate chiral variations, carbon nanotubes (CNTs) exhibit various exceptional physical properties, such as ultrahigh electrical and thermal conductivity, exceptional mechanical strength, and chirality-dependent metallicity. These properties make CNTs highly promising for diverse applications, including field-effect transistor… ▽ More Because of their natural one-dimensional (1D) structure combined with intricate chiral variations, carbon nanotubes (CNTs) exhibit various exceptional physical properties, such as ultrahigh electrical and thermal conductivity, exceptional mechanical strength, and chirality-dependent metallicity. These properties make CNTs highly promising for diverse applications, including field-effect transistors, sensors, photodetectors, and thermoelectric devices. While CNTs excel individually at the nanoscale, their 1D and chiral nature can be lost on a macroscopic scale when they are randomly assembled. Therefore, the alignment and organization of CNTs in macroscopic structures is crucial for harnessing their full potential. In this review, we explore recent advancements in understanding CNT alignment mechanisms, improving CNT aligning methods, and demonstrating macroscopically 1D properties of ordered CNT assemblies. We also focus on a newly discovered class of CNT architectures, combining CNT alignment and twisting mechanisms to create artificial radial and chiral CNT films at wafer scales. Finally, we summarize recent developments related to aligned and chiral CNT films in optoelectronics, highlighting their unique roles in solar cells, thermal emitters, and optical modulators. △ Less

Submitted 1 December, 2023; originally announced December 2023.

Report number: 24014699

Journal ref: ACS Nano 2025, 19 (11), 10718-10737

Interplay between Chiral Charge Density Wave and Superconductivity in Kagome Superconductors: A Self-consistent Theoretical Analysis

Authors: Hong-Min Jiang, Min Mao, Zhi-Yong Miao, Shun-Li Yu, Jian-Xin Li

Abstract: Inspired by the recent discovery of a successive evolutions of electronically ordered states, we present a self-consistent theoretical analysis that treats the interactions responsible for the chiral charge order and superconductivity on an equal footing. It is revealed that the self-consistent theory captures the essential features of the successive temperature evolutions of the electronic states… ▽ More Inspired by the recent discovery of a successive evolutions of electronically ordered states, we present a self-consistent theoretical analysis that treats the interactions responsible for the chiral charge order and superconductivity on an equal footing. It is revealed that the self-consistent theory captures the essential features of the successive temperature evolutions of the electronic states from the high-temperature ``triple-$Q$" $2\times 2$ charge-density-wave state to the nematic charge-density-wave phase, and finally to the low-temperature superconducting state coexisting with the nematic charge density wave. We provide a comprehensive explanation for the temperature evolutions of the charge ordered states and discuss the consequences of the intertwining of the superconductivity with the nematic charge density wave. Our findings not only account for the successive temperature evolutions of the ordered electronic states discovered in experiments but also provide a natural explanation for the two-fold rotational symmetry observed in both the charge-density-wave and superconducting states. Moreover, the intertwining of the superconductivity with the nematic charge density wave order may also be an advisable candidate to reconcile the divergent or seemingly contradictory experimental outcomes regarding the superconducting properties. △ Less

Submitted 28 October, 2023; originally announced October 2023.

Journal ref: Phys. Rev. B 109, 104512 (2024)

Optimal Local Measurements in Single-Parameter Quantum Metrology

Authors: Jia-Xuan Liu, Jing Yang, Hai-Long Shi, Sixia Yu

Abstract: Quantum measurement plays a crucial role in quantum metrology. Due to the limitations of experimental capabilities, collectively measuring multiple copies of probing systems can present significant challenges. Therefore, the concept of locality in quantum measurements must be considered. In this work, we investigate the possibility of achieving the Quantum Cramér-Rao Bound (QCRB) through local mea… ▽ More Quantum measurement plays a crucial role in quantum metrology. Due to the limitations of experimental capabilities, collectively measuring multiple copies of probing systems can present significant challenges. Therefore, the concept of locality in quantum measurements must be considered. In this work, we investigate the possibility of achieving the Quantum Cramér-Rao Bound (QCRB) through local measurements (LM). We first demonstrate that if there exists a LM to saturate the QCRB for qubit systems, then we can construct another rank-1 local projective measurement to saturate the QCRB. In this sense, rank-1 local projective measurements are sufficient to analyze the problem of saturating the QCRB. For pure qubits, we propose two necessary and sufficient methods to determine whether and how a given parameter estimation model can achieve QCRB through LM. The first method, dubbed iterative matrix partition method (IMP) and based on unitary transformations that render the diagonal entries of a tracless matrix vanish, elucidates the underlying mathematical structure of LM as well as the local measurements with classical communications (LMCC), generalizing the result by [Zhou et al Quantum Sci. Technol. 5, 025005 (2020)], which only holds for the later case. We clarify that the saturation of QCRB through LM for the GHZ-encoded states is actually due to the self-similar structure in this approach. The second method, dubbed hierarchy of orthogonality conditions (HOC) and based on the parametrization of rank-1 measurements for qubit systems, allows us to construct several examples of saturating QCRB, including the three-qubit W states and $N$-qubit W states ($N \geq 3$). Our findings offer insights into achieving optimal performance in quantum metrology when measurement resources are limited. △ Less

Submitted 20 February, 2025; v1 submitted 30 September, 2023; originally announced October 2023.

Comments: 10 pages, 1 figure. Close to the published version

Journal ref: Phys. Rev. A 111, 022436 (2025)

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy

Authors: Calbi Gunder, Mohammad Zamani Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo

Abstract: The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates via molecular beam epitaxy. Within we demonstrate composition targeting and logarithmic gradients to achieve linearly graded pseudomorph Ge1-xSnx compositions up… ▽ More The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates via molecular beam epitaxy. Within we demonstrate composition targeting and logarithmic gradients to achieve linearly graded pseudomorph Ge1-xSnx compositions up to 10 % before partial relaxation of the structure and a continued gradient up to 16 % GeSn. In this report, we use X-ray diffraction, simulation, SIMS and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm. This methodology of growth is a major step forward in the field of GeSn development and the first demonstration of algorithmically driven, linearly graded GeSn films. △ Less

Submitted 12 August, 2024; v1 submitted 12 September, 2023; originally announced September 2023.

Comments: Final Version

Gate-Tunable Critical Current of the Three-Dimensional Niobium Nano-Bridge Josephson Junction

Authors: Shujie Yu, Lei Chen, Yinping Pan, Yue Wang, Denghui Zhang, Guangting Wu, Xinxin Fan, Xiaoyu Liu, Ling Wu, Lu Zhang, Wei Peng, Jie Ren, Zhen Wang

Abstract: Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned using a gate voltage {V_g}. Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nano-bridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this struc… ▽ More Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned using a gate voltage {V_g}. Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nano-bridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing {V_g}. The critical gate voltage Vgc was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned using {V_g} in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels. △ Less

Submitted 2 August, 2023; originally announced August 2023.

Comments: 15 pages, 5 figures

Geometric Scaling of the Current-Phase Relation of Niobium Nano-Bridge Junctions

Authors: Yue Wang, Lei Chen, Yinping Pan, Denghui Zhang, Shujie Yu, Guangting Wu, Xiaoyu Liu, Ling Wu, Weifeng Shi, Guofeng Zhang, Lu Zhang, Wei Peng, Jie Ren, Zhen Wang

Abstract: The nano-bridge junction (NBJ) is a type of Josephson junction that is advantageous for the miniaturization of superconducting circuits. However, the current-phase relation (CPR) of the NBJ usually deviates from a sinusoidal function which has been explained by a simplified model with correlation only to its effective length. Here, we investigated both measured and calculated CPRs of niobium NBJs… ▽ More The nano-bridge junction (NBJ) is a type of Josephson junction that is advantageous for the miniaturization of superconducting circuits. However, the current-phase relation (CPR) of the NBJ usually deviates from a sinusoidal function which has been explained by a simplified model with correlation only to its effective length. Here, we investigated both measured and calculated CPRs of niobium NBJs of a cuboidal shape with a three-dimensional bank structure. From a sine-wave to a saw-tooth-like form, we showed that deviated CPRs of NBJs can be described quantitatively by its skewness Δθ. Furthermore, the measured dependency of Δθ on the critical current {I_0} from 108 NBJs turned out to be consistent with the calculated ones derived from the change in geometric dimensions. It suggested that the CPRs of NBJs can be tuned by their geometric dimensions. In addition, the calculated scaling behavior of Δθ versus {I_0} in three-dimensional space was provided for the future design of superconducting circuits of a high integration level by using niobium NBJs. △ Less

Submitted 2 August, 2023; originally announced August 2023.

Comments: 20 pages, 10 figures

Spectrum of the hole excitation in spin-orbit Mott insulator Na$_2$IrO$_3$

Authors: Wei Wang, Zhao-Yang Dong, Shun-Li Yu, Jian-Xin Li

Abstract: We study the motion of a hole with internal degrees of freedom, introduced to the zigzag magnetic ground state of Na$_2$IrO$_3$, by using the self-consistent Born approximation. We find that the low, intermediate, and high-energy spectra are primarily attributed to the singlet, triplet, and quintet hole contributions, respectively. The spectral functions exhibit distinct features such as the elect… ▽ More We study the motion of a hole with internal degrees of freedom, introduced to the zigzag magnetic ground state of Na$_2$IrO$_3$, by using the self-consistent Born approximation. We find that the low, intermediate, and high-energy spectra are primarily attributed to the singlet, triplet, and quintet hole contributions, respectively. The spectral functions exhibit distinct features such as the electron-like dispersion of low-energy states near the $Γ$ point, the maximum M-point intensity of mid-energy states, and the hole-like dispersion of high-energy states. These features are robust and almost insensitive to the exchange model and Hund's coupling, and are in qualitative agreement with the angular-resolved photoemission spectra observed in Na$_2$IrO$_3$. Our results reveal that the interference between internal degrees of freedom in different sublattices plays an important role in inducing the complex dispersions. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Journal ref: Chin. Phys. Lett. 40, 087101 (2023)

High-density single-atom electrocatalytic centers on two-dimensional topological platinum tellurides with Te-vacancy superstructure

Authors: Xin Xu, Xuechun Wang, Shuming Yu, Chenhui Wang, Guowei Liu, Hao Li, Jiangang Yang, Jing Li, Tao Sun, Xiao Hai, Lei Li, Xue Liu, Ying Zhang, Weifeng Zhang, Quan Zhang, Kedong Wang, Nan Xu, Yaping Ma, Fangfei Ming, Ping Cui, Jiong Lu, Zhenyu Zhang, Xudong Xiao

Abstract: Chemical activation of the intrinsically inert basal planes of transition metal dichalcogenides (TMDs) is crucial for developing high-efficiency electrocatalysts for energy technology applications. Here we report the discovery of an efficient TMD-based topological catalyst for hydrogen evolution reaction (HER), containing high-density single-atom reactive centers on a few-layer (7x7)-PtTe2-x super… ▽ More Chemical activation of the intrinsically inert basal planes of transition metal dichalcogenides (TMDs) is crucial for developing high-efficiency electrocatalysts for energy technology applications. Here we report the discovery of an efficient TMD-based topological catalyst for hydrogen evolution reaction (HER), containing high-density single-atom reactive centers on a few-layer (7x7)-PtTe2-x superstructure with a Te-vacancy density of x. Compared with pristine Pt(111), PtTe2, and (2x2)-PtTe2-x, (7x7)-PtTe2-x exhibits superior HER performance owing to its substantially increased density of undercoordinated Pt sites, and displays exceptional catalytic stability when operating at high current densities. Our first-principles calculations confirm that multiple types of undercoordinated Pt sites on (7x7)-PtTe2-x exhibit favorable hydrogen adsorption Gibbs free energies, and that the reactive sites can further increase their population upon increasing hydrogen coverage. Both the (2x2)- and (7x7)-PtTe2-x are also shown to possess nontrivial band topology with robust edge states that may further facilitate HER. △ Less

Submitted 20 June, 2024; v1 submitted 20 July, 2023; originally announced July 2023.

Localization and spectral structure in two-dimensional quasicrystal potentials

Authors: Zhaoxuan Zhu, Shengjie Yu, Dean Johnstone, Laurent Sanchez-Palencia

Abstract: Quasicrystals, a fascinating class of materials with long-range but nonperiodic order, have revolutionized our understanding of solid-state physics due to their unique properties at the crossroads of long-range-ordered and disordered systems. Since their discovery, they continue to spark broad interest for their structural and electronic properties. The quantum simulation of quasicrystals in synth… ▽ More Quasicrystals, a fascinating class of materials with long-range but nonperiodic order, have revolutionized our understanding of solid-state physics due to their unique properties at the crossroads of long-range-ordered and disordered systems. Since their discovery, they continue to spark broad interest for their structural and electronic properties. The quantum simulation of quasicrystals in synthetic quantum matter systems offers a unique playground to investigate these systems with unprecedented control parameters. Here, we investigate the localization properties and spectral structure of quantum particles in 2D quasicrystalline optical potentials. While states are generally localized at low energy and extended at high energy, we find alternating localized and critical states at intermediate energies. Moreover, we identify a complex succession of gaps in the energy spectrum. We show that the most prominent gap arises from strongly localized ring states, with the gap width determined by the energy splitting between states with different quantized winding numbers. In addition, we find that these gaps are stable for quasicrystals with different rotational symmetries and potential depths, provided that other localized states do not enter the gap generated by the ring states. Our findings shed light on the unique properties of quantum quasicrystals and have implications for their many-body counterparts. △ Less

Submitted 23 January, 2024; v1 submitted 18 July, 2023; originally announced July 2023.

Journal ref: Phys. Rev. A 109, 013314 (2024)

Potential-tuned magnetic switches and half-metallicity transition in zigzag graphene nanoribbons

Authors: Wei-Jian Li, Shi-Chang Xiao, Da-Fei Sun, Chang-De Gong, Shun-Li Yu, Yuan Zhou

Abstract: Realizing controllable room-temperature ferromagnetism in carbon-based materials is one of recent prospects. The magnetism in graphene nanostructures reported previously is mostly formed near the vacancies, zigzag edges, or impurities by breaking the local sublattice imbalance, though a bulk chiral spin-density-wave ground state is also reported at van Hove filling due to its perfectly nested Ferm… ▽ More Realizing controllable room-temperature ferromagnetism in carbon-based materials is one of recent prospects. The magnetism in graphene nanostructures reported previously is mostly formed near the vacancies, zigzag edges, or impurities by breaking the local sublattice imbalance, though a bulk chiral spin-density-wave ground state is also reported at van Hove filling due to its perfectly nested Fermi surface. Here, combining of the first-principles and tight-binding model simulations, we predict a robust ferromagnetic domain lies between the inter-chain carbon atoms inside the zigzag graphene nanoribbons by applying a potential drop. We show that the effective zigzag edges provide the strong correlation background through narrowing the band width, while the internal Van Hove filling provides the strong ferromagnetic background inherited from the bulk. The induced ferromagnetism exhibit interesting switching effect when the nominal Van Hove filling crosses the intra- and inter-chain region by tuning the potential drops. We further observe a robust half-metallicity transition from one spin channel to another within the same magnetic phase. These novel properties provide promising ways to manipulate the spin degree of freedom in graphene nanostructures. △ Less

Submitted 17 May, 2023; originally announced May 2023.

Comments: 9 pages, 3 figures

Nematic chiral spin liquid in a Kitaev magnet under external magnetic field

Authors: Shun-Yao Yu, Han Li, Qi-Rong Zhao, Yuan Gao, Xiao-Yu Dong, Zheng-Xin Liu, Wei Li, Shou-Shu Gong

Abstract: The possible existence of a quantum spin liquid (QSL) phase, an exotic state of matter with long-range quantum entanglement and fractionalized excitations, in $α$-RuCl$_3$ has sparked widespread interests in exploring QSLs in various Kitaev models under magnetic fields. Recently, a $K$-$J$-$Γ$-$Γ'$ model has been proposed to accurately describe the compound by fitting the measured thermodynamic da… ▽ More The possible existence of a quantum spin liquid (QSL) phase, an exotic state of matter with long-range quantum entanglement and fractionalized excitations, in $α$-RuCl$_3$ has sparked widespread interests in exploring QSLs in various Kitaev models under magnetic fields. Recently, a $K$-$J$-$Γ$-$Γ'$ model has been proposed to accurately describe the compound by fitting the measured thermodynamic data, where $J$ is Heisenberg interaction, and $Γ$, $Γ'$ are off-diagonal exchanges on top of the dominant Kitaev coupling $K$. Based on this effective model, an intermediate QSL phase in presence of an out-of-plane fields along the $[1 1 1]$ direction, between the low-field zigzag order and high-field polarized phase, has been predicted. By combining density matrix renormalization group (DMRG), exponential tensor renormalization group (XTRG), and variational Monte Carlo (VMC) calculations, we address the nature of this QSL phase in the honeycomb $K$-$J$-$Γ$-$Γ'$ model under the $[1 1 1]$-direction field. Our DMRG calculations find the algebraic-like decay of spin correlation function, the finite spin scalar chiral order, and lattice nematic order. Together with the XTRG results of power-law specific heat at low temperature, our findings naturally suggest a gapless nematic chiral spin liquid. On the other hand, our VMC study finds a gapped nematic chiral spin liquid with the variational energy very close to that obtained in DMRG. As VMC finds a very small gap that is beyond the current resolution of both ground-state DMRG and finite-temperature XTRG calculations on finite-width cylinders, we resort the full clarification for the nature of the intermediate QSL to future studies. Lastly, we discuss the implications of our results to the recent experiment on $α$-RuCl$_3$ and the QSL-like phase in a similar $K$-$Γ$-$Γ'$ model. △ Less

Submitted 2 April, 2023; originally announced April 2023.

Comments: 14 pages, 13 figures

Impact of the orbital current order on the superconducting properties of the kagome superconductors

Authors: Hong-Min Jiang, Ming-Xun Liu, Shun-Li Yu

Abstract: Motivated by recent experimental evidences signalling the chiral charge order in the vanadium-based kagome superconductors, we theoretically investigate the impact of the chiral flux charge order over the experimental outcomes for the normal and the SC properties. It is revealed that the spectral weight on the Fermi surface (FS) is partially gaped by the chiral flux charge order with the reservati… ▽ More Motivated by recent experimental evidences signalling the chiral charge order in the vanadium-based kagome superconductors, we theoretically investigate the impact of the chiral flux charge order over the experimental outcomes for the normal and the SC properties. It is revealed that the spectral weight on the Fermi surface (FS) is partially gaped by the chiral flux charge order with the reservation of the spectral weight on the $M$ points and the midpoint between the two adjacent $M$ points, resulting in the momentum-dependent energy gap being consistent with the recent experimental observations. More importantly, by considering the influence of the chiral flux charge order, we find that a conventional fully gapped SC pairing state evolves into a nodal gap feature for the spectral weight due to the spectral gap modulations on the FS. As a result, the U-shaped density of states (DOS) deforms to the V-shaped one along with the residual DOS near the Fermi energy. These results bear some resemblance to the experimental observations, and may serve as a promising proposal to mediate the divergent or seemingly contradictory experimental outcomes about the SC pairing symmetry. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Journal ref: Phys. Rev. B 107, 064506 (2023)