Showing 1–50 of 114 results for author: Yu, M

Mutual Influence of Symmetries and Topological Field Theories

Authors: Daniel Teixeira, Matthew Yu

Abstract: We study how the fusion 2-category symmetry of a fermionic (2+1)d QFT can be affected when one allows for stacking with TQFTs to be an equivalence relation for QFTs. Focusing on a simple kind of fermionic fusion 2-category described purely by group theoretical data, our results reveal that by allowing for stacking with $\mathrm{Spin}(n)_1$ as an equivalence relation enables a finite set of inequiv… ▽ More We study how the fusion 2-category symmetry of a fermionic (2+1)d QFT can be affected when one allows for stacking with TQFTs to be an equivalence relation for QFTs. Focusing on a simple kind of fermionic fusion 2-category described purely by group theoretical data, our results reveal that by allowing for stacking with $\mathrm{Spin}(n)_1$ as an equivalence relation enables a finite set of inequivalent modifications to the original fusion 2-categorical-symmetry. To put our results in a broader context, we relate the order of the symmetry modifications to the image of a map between groups of minimal nondegenerate extensions, and to the tangential structure set by the initial categorical symmetry on the background manifold for the QFT. △ Less

Submitted 8 July, 2025; originally announced July 2025.

Comments: 24 pages, comments welcome

MSC Class: 18M20; 18N10

Role of long-range dipolar interactions in the simulation of the properties of polar crystals using effective atomic potentials

Authors: Miao Yu, Fernando Gómez-Ortiz, Louis Bastogne, Jin-Zhu Zhao, Philippe Ghosez

Abstract: Driven by novel approaches and computational techniques, second-principles atomic potentials are nowadays at the forefront of computational materials science, enabling large-scale simulations of material properties with near-first-principles accuracy. However, their application to polar materials can be challenging, particularly when longitudinal-optical phonon modes are active on the material, as… ▽ More Driven by novel approaches and computational techniques, second-principles atomic potentials are nowadays at the forefront of computational materials science, enabling large-scale simulations of material properties with near-first-principles accuracy. However, their application to polar materials can be challenging, particularly when longitudinal-optical phonon modes are active on the material, as accurately modeling such systems requires incorporating the long-range part of the dipole-dipole interactions. In this study, we challenge the influence of these interactions on the properties of polar materials taking BaTiO$_3$ as paradigmatic example. By comparing models with and without the long-range part of the electrostatic contributions in a systematic way, we demonstrate that even if these interactions are neglected, the models can still provide an overall good description of the material, though they may lead to punctual significant artifacts. Our results propose a pathway to identify when an atomistic potential may be inadequate and needs to be corrected through the inclusion of the long-range part of dipolar interactions. △ Less

Submitted 27 June, 2025; originally announced June 2025.

Engineered Chirality of One-Dimensional Nanowires

Authors: Megan Briggeman, Elliott Mansfield, Johannes Kombe, François Damanet, Hyungwoo Lee, Yuhe Tang, Muqing Yu, Sayanwita Biswas, Jianan Li, Mengchen Huang, Chang-Beom Eom, Patrick Irvin, Andrew J. Daley, Jeremy Levy

Abstract: The origin and function of chirality in DNA, proteins, and other building blocks of life represent a central question in biology. Observations of spin polarization and magnetization associated with electron transport through chiral molecules, known collectively as the chiral induced spin selectivity (CISS) effect, suggest that chirality improves electron transfer by inhibiting backscattering. Mean… ▽ More The origin and function of chirality in DNA, proteins, and other building blocks of life represent a central question in biology. Observations of spin polarization and magnetization associated with electron transport through chiral molecules, known collectively as the chiral induced spin selectivity (CISS) effect, suggest that chirality improves electron transfer by inhibiting backscattering. Meanwhile, the role of coherence in the electron transport within chiral nanowires is believed to be important but is challenging to investigate experimentally. Using reconfigurable nanoscale control over conductivity at the LaAlO$_3$/SrTiO$_3$ interface, we create chiral electron potentials that explicitly lack mirror symmetry. Quantum transport measurements on these chiral regions that constitute effective nanowires for the electrons reveal oscillatory transmission resonances as a function of both magnetic field and chemical potential. We interpret these resonances as arising from an engineered axial spin-orbit interaction within the chiral region. The ability to create 1D effective electron waveguides with this specificity and complexity creates new opportunities to test, via analog quantum simulation, theories about the relationship between chirality and spin-polarized electron transport in one-dimensional geometries. △ Less

Submitted 8 February, 2025; originally announced February 2025.

Global Structure in the Presence of a Topological Defect

Authors: Arun Debray, Weicheng Ye, Matthew Yu

Abstract: We investigate the global structure of topological defects which wrap a submanifold $F\subset M$ in a quantum field theory defined on a closed manifold $M$. The Pontryagin-Thom construction oversees the interplay between the global structure of $F$ and the global structure of $M$. We will employ this construction to two distinct mathematical frameworks with physical applications. The first framewo… ▽ More We investigate the global structure of topological defects which wrap a submanifold $F\subset M$ in a quantum field theory defined on a closed manifold $M$. The Pontryagin-Thom construction oversees the interplay between the global structure of $F$ and the global structure of $M$. We will employ this construction to two distinct mathematical frameworks with physical applications. The first framework is the concept of a characteristic structure, consisting of the data of pairs of manifolds $(M,F)$ where $F$ is Poincaré dual to some characteristic class. This concept is discussed in the mathematics literature, and shown here to have meaningful physical interpretations related to defects. In our examples we will mainly focus on the case where $M$ is 4-dimensional and $F$ has codimension 2. The second framework uses obstruction theory and the fact that spontaneously broken finite symmetries leave behind domain walls, to determine the conditions on which dimensions a higher-form finite symmetry can spontaneously break. We explicitly study the cases of higher-form $\mathbb Z/2$ symmetry, but the method can be generalized to other groups. △ Less

Submitted 30 January, 2025; originally announced January 2025.

Comments: 54 pages. Comments welcome!

Electronic States and Mechanical Behaviors of Phosphorus Carbide Nanotubes -- Structural and Quantum Phase Transitions in a Quasi-one-dimensional Material

Authors: Shivam Sharma, Chenhaoyue Wang, Hsuan Ming Yu, Amartya S. Banerjee

Abstract: Quasi-one-dimensional (1D) materials can manifest exotic electronic properties in manners that are distinct from the bulk phase or other low-dimensional systems. Helical symmetries in such materials -- e.g., nanotubes with intrinsic or applied twist -- can simultaneously lead to strong electronic correlation and anomalous transport behavior. However, these materials remain underexplored, in part d… ▽ More Quasi-one-dimensional (1D) materials can manifest exotic electronic properties in manners that are distinct from the bulk phase or other low-dimensional systems. Helical symmetries in such materials -- e.g., nanotubes with intrinsic or applied twist -- can simultaneously lead to strong electronic correlation and anomalous transport behavior. However, these materials remain underexplored, in part due to computational challenges. Using specialized symmetry-adapted first-principles calculations, we show that mono-layer $P_2C_3$ -- identified in a previous letter to possess ``double Kagome bands'' -- exhibits a number of striking properties when rolled up into phosphorous carbide nanotubes ($P_2C_3$NTs). Both armchair and zigzag $P_2C_3$NTs are stable at room temperature and display a degenerate combination of Dirac points and electronic flat bands at the Fermi level. Notably, these flat bands are highly resilient to elastic deformations. Large strains can transform the nanotube structure from honeycomb-kagome to ``brick-wall'', and trigger multiple quantum phase transitions. Edge states in $P_2C_3$NTs, spin-degeneracy lifting induced by vacancies and dopants, and strain-tunable magnetism are also discussed. △ Less

Submitted 16 February, 2025; v1 submitted 19 January, 2025; originally announced January 2025.

Comments: Keywords: chiral nanomaterial, flat bands, strong correlation, quantum phase transition

Atomic-scale observation of $d$-$π$-$d$ spin coupling in coordination structures

Authors: Xue Zhang, Xin Li, Jie Li, Haoyang Pan, Minghui Yu, Yajie Zhang, Gui-Lin Zhu, Zhen Xu, Ziyong Shen, Shimin Hou, Yaping Zang, Bingwu Wang, Kai Wu, Shang-Da Jiang, Ivano E. Castelli, Lianmao Peng, Per Hedegård, Song Gao, Jing-Tao Lü, Yongfeng Wang

Abstract: Spin coupling between magnetic metal atoms and organic radicals plays a pivotal role in high-performance magnetic materials. The complex interaction involving multi-spin centers in bulk materials makes it challenging to study spin coupling at the atomic scale. Here, we investigate the $d$-$π$-$d$ spin interaction in well-defined metal-organic coordinated structures composed of two iron (Fe) atoms… ▽ More Spin coupling between magnetic metal atoms and organic radicals plays a pivotal role in high-performance magnetic materials. The complex interaction involving multi-spin centers in bulk materials makes it challenging to study spin coupling at the atomic scale. Here, we investigate the $d$-$π$-$d$ spin interaction in well-defined metal-organic coordinated structures composed of two iron (Fe) atoms and four all-trans retinoic acid (ReA) molecules, using low-temperature scanning tunneling microscopy and atomic force microscopy. The ReA molecule is turned into a spin-$1/2$ radical state by dehydrogenation, facilitating strong magnetic coupling with the coordinated Fe atoms. Comprehensive theoretical analysis, based on density functional theory and valence bond theory, further elucidates the intrinsic mechanism of ferrimagnetic spin coupling in the coordination structure. Specifically, simultaneous antiferromagnetic coupling of Fe dimer to ReA radicals parallelizes the dimer spin orientation. This work contributes to the fundamental understanding of spin interaction in metal-organic coordination structures and provides microscopic insights for designing advanced magnetic materials. △ Less

Submitted 2 January, 2025; originally announced January 2025.

A non-semisimple non-invertible symmetry

Authors: Clement Delcamp, Edmund Heng, Matthew Yu

Abstract: We investigate the action of a non-semisimple, non-invertible symmetry on spin chains, whose topological defects encode the category of modules over the Taft algebra of dimension 4. Sacrificing Hermiticity, we construct several symmetric, frustration-free, gapped Hamiltonians with real spectra and analyse their ground state subspaces. Our study reveals two intriguing phenomena. First, we identify… ▽ More We investigate the action of a non-semisimple, non-invertible symmetry on spin chains, whose topological defects encode the category of modules over the Taft algebra of dimension 4. Sacrificing Hermiticity, we construct several symmetric, frustration-free, gapped Hamiltonians with real spectra and analyse their ground state subspaces. Our study reveals two intriguing phenomena. First, we identify an $\mathbb{S}^1$-parametrised family of symmetric states, all of which belong to the same gapped phase with respect to the invertible subsymmetry, yet transform inequivalently under the non-semisimple symmetry. Second, we find a model where a product state and the so-called W state spontaneously break the symmetry. We further relate the indistinguishability of these two states in the infinite-volume limit to the notion that they are associated with a simple object and its projective cover, respectively, in a non-semisimple module category. △ Less

Submitted 27 December, 2024; originally announced December 2024.

Switchable Skyrmion-Antiskyrmion Tubes in Rhombohedral BaTiO$_\mathrm{3}$ and Related Materials

Authors: Fernando Gómez-Ortiz, Louis Bastogne, Sriram Anand, Miao Yu, Xu He, Philippe Ghosez

Abstract: Skyrmions are stable topological textures that have garnered substantial attention within the ferroelectric community for their exotic functional properties. While previous studies have questioned the feasibility of [001]$_{\text{pc}}$ skyrmion tubes in rhombohedral BaTiO$_3$ due to the high energy cost of 180$^\circ$ domain walls, we demonstrate here their stabilization with topological charges o… ▽ More Skyrmions are stable topological textures that have garnered substantial attention within the ferroelectric community for their exotic functional properties. While previous studies have questioned the feasibility of [001]$_{\text{pc}}$ skyrmion tubes in rhombohedral BaTiO$_3$ due to the high energy cost of 180$^\circ$ domain walls, we demonstrate here their stabilization with topological charges of $\mathcal{Q} = \pm 1$ from density functional theory and second-principles calculations. By enabling extensive vortex and antivortex polarization configurations, the expected prohibitive energetic barriers are overcomed while preserving the topological nature of the structures. Notably, we extend these findings to demonstrate the appearance of skyrmion and antiskyrmion tubes in other related materials, highlighting their broader relevance. Furthermore, our computational experiments indicate that these structures can be directly stabilized and reversibly switched by applied electric fields, establishing a straightforward route for their practical realization and functional control in nanoelectronic devices. △ Less

Submitted 18 April, 2025; v1 submitted 25 November, 2024; originally announced November 2024.

The Classification of Fusion 2-Categories

Authors: Thibault D. Décoppet, Peter Huston, Theo Johnson-Freyd, Dmitri Nikshych, David Penneys, Julia Plavnik, David Reutter, Matthew Yu

Abstract: We classify (multi)fusion 2-categories in terms of braided fusion categories and group cohomological data. This classification is homotopy coherent -- we provide an equivalence between the 3-groupoid of (multi)fusion 2-categories up to monoidal equivalences and a certain 3-groupoid of commuting squares of $\mathrm{B}\mathbb{Z}/2$-equivariant spaces. Rank finiteness and Ocneanu rigidity for fusion… ▽ More We classify (multi)fusion 2-categories in terms of braided fusion categories and group cohomological data. This classification is homotopy coherent -- we provide an equivalence between the 3-groupoid of (multi)fusion 2-categories up to monoidal equivalences and a certain 3-groupoid of commuting squares of $\mathrm{B}\mathbb{Z}/2$-equivariant spaces. Rank finiteness and Ocneanu rigidity for fusion 2-categories are immediate corollaries of our classification. △ Less

Submitted 8 November, 2024; originally announced November 2024.

Comments: 50 pages

MSC Class: 16D90; 18N10; 18M20; 18N10

Magnetically Tuned Metal-Insulator Transition in LaAlO$_3$/SrTiO$_3$ Nanowire Arrays

Authors: Ranjani Ramachandran, Shashank Anand, Kitae Eom, Kyoungjun Lee, Dengyu Yang, Muqing Yu, Sayanwita Biswas, Aditi Nethwewala, Chang-Beom Eom, Erica Carlson, Patrick Irvin, Jeremy Levy

Abstract: A wide family of two dimensional (2D) systems, including stripe-phase superconductors, sliding Luttinger liquids, and anisotropic 2D materials, can be modeled by an array of coupled one-dimensional (1D) electron channels or nanowire arrays. Here we report experiments in arrays of conducting nanowires with gate and field tunable interwire coupling, that are programmed at the LaAlO$_3$/SrTiO$_3$ int… ▽ More A wide family of two dimensional (2D) systems, including stripe-phase superconductors, sliding Luttinger liquids, and anisotropic 2D materials, can be modeled by an array of coupled one-dimensional (1D) electron channels or nanowire arrays. Here we report experiments in arrays of conducting nanowires with gate and field tunable interwire coupling, that are programmed at the LaAlO$_3$/SrTiO$_3$ interface. We find a magnetically-tuned metal-to-insulator transition in which the transverse resistance of the nanowire array increases by up to four orders of magnitude. To explain this behavior, we develop a minimal model of a coupled two-wire system which agrees well with observed phenomena. These nanowire arrays can serve as a model systems to understand the origin of exotic behavior in correlated materials via analog quantum simulation. △ Less

Submitted 1 January, 2025; v1 submitted 2 October, 2024; originally announced October 2024.

Electric and Magnetic Field-dependent Tunneling between Coupled Nanowires

Authors: Shashank Anand, Ranjani Ramachandran, Kitae Eom, Kyoungjun Lee, Dengyu Yang, Muqing Yu, Sayanwita Biswas, Aditi Nethwewala, Chang-Beom Eom, Erica Carlson, Patrick Irvin, Jeremy Levy

Abstract: Coupled quasi-one-dimensional (quasi-1D) electron systems host rich emergent physics that cannot be accounted for by understanding isolated 1D electron systems alone. Open questions remain about how transport in these arrays can be manipulated by the application of external electric and magnetic fields. In this theoretical study, we consider a pair of coupled nanowires with non-interacting electro… ▽ More Coupled quasi-one-dimensional (quasi-1D) electron systems host rich emergent physics that cannot be accounted for by understanding isolated 1D electron systems alone. Open questions remain about how transport in these arrays can be manipulated by the application of external electric and magnetic fields. In this theoretical study, we consider a pair of coupled nanowires with non-interacting electrons. We find that a metal-insulator transition is induced by an out-of-plane magnetic field and a transverse potential bias on an array of such coupled wires. We demonstrate the existence of distinct conductance features and highlight the crucial role played by the field dependence of the interwire potential barrier on transport properties. These predictions agree well with transport experiments performed on coupled nanowires sketched on an LaAlO3/SrTiO3 interface. Since our model makes minimal assumptions, we expect our predictions to hold for a wide class of coupled 1D systems. △ Less

Submitted 2 October, 2024; originally announced October 2024.

Electrically pumped h-BN single-photon emission in van der Waals heterostructure

Authors: Mihyang Yu, Jeonghan Lee, Kenji Watanabe, Takashi Taniguchi, Jieun Lee

Abstract: Atomic defects in solids offer a versatile basis to study and realize quantum phenomena and information science in various integrated systems. All-electrical pumping of single defects to create quantum light emission has been realized in several platforms including color centers in diamond and silicon carbide, which could lead to the circuit network of electrically triggered single-photon sources.… ▽ More Atomic defects in solids offer a versatile basis to study and realize quantum phenomena and information science in various integrated systems. All-electrical pumping of single defects to create quantum light emission has been realized in several platforms including color centers in diamond and silicon carbide, which could lead to the circuit network of electrically triggered single-photon sources. However, a wide conduction channel which reduces the carrier injection per defect site has been a major obstacle. Here, we realize a device concept to construct electrically pumped single-photon emission using a van der Waals stacked structure with atomic plane precision. Defect-induced tunneling currents across graphene and NbSe2 electrodes sandwiching an atomically thin h-BN layer allow robust and persistent generation of non-classical light from h-BN. The collected emission photon energies range between 1.4 and 2.9 eV, revealing the electrical excitation of a variety of atomic defects. By analyzing the dipole axis of observed emitters, we further confirm that emitters are crystallographic defect structures of h-BN crystal. Our work facilitates implementing efficient and miniaturized single-photon devices in van der Waals platforms toward applications in quantum optoelectronics. △ Less

Submitted 30 December, 2024; v1 submitted 19 July, 2024; originally announced July 2024.

Comments: 21 pages, 4 figures

Nanoscale ferroelectric programming of van der Waals heterostructures

Authors: Dengyu Yang, Qingrui Cao, Erin Akyuz, John Hayden, Josh Nordlander, Muqing Yu, Ranjani Ramachandran, Patrick Irvin, Jon-Paul Maria, Benjamin M. Hunt, Jeremy Levy

Abstract: The ability to create superlattices in van der Waals (vdW) heterostructures via moiré interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide ra… ▽ More The ability to create superlattices in van der Waals (vdW) heterostructures via moiré interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide range of periodic structures. Here, we describe a top-down approach to engineering nanoscale potentials in vdW layers using a buried programmable ferroelectric layer. Ultra-low-voltage electron beam lithography (ULV-EBL) is used to program ferroelectric domains in a ferroelectric Al_{1-x}B_{x}N thin film through a graphene/hexagonal boron nitride (hBN) heterostructure that is transferred on top. We demonstrate ferroelectric field effects by creating a lateral p-n junction, and demonstrate spatial resolution down to 35 nm, limited by the resolution of our scanned probe characterization methods. This innovative, resist-free patterning method is predicted to achieve 10 nm resolution and enable arbitrary programming of vdW layers, opening a pathway to create new phases that are inaccessible by moiré techniques. The ability to "paint" different phases of matter on a single vdW "canvas" provides a wealth of new electronic and photonic functionalities. △ Less

Submitted 17 July, 2024; originally announced July 2024.

Comments: 9 pages, 4 figures and supplemental material

Long-Range Nanoelectromechanical Coupling at the LaAlO$_3$/SrTiO$_3$ Interface

Authors: Aditi Nethwewala, Kitae Eom, Muqing Yu, Ranjani Ramachandran, Chang-Beom Eom, Patrick Irvin, Jeremy Levy

Abstract: The LaAlO$_3$/SrTiO$_3$ interface hosts a plethora of gate-tunable electronic phases. Gating of LaAlO$_3$/SrTiO$_3$ interfaces are usually assumed to occur electrostatically. However, increasing evidence suggests that non-local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, we sketch quasi-1D ballistic electron wa… ▽ More The LaAlO$_3$/SrTiO$_3$ interface hosts a plethora of gate-tunable electronic phases. Gating of LaAlO$_3$/SrTiO$_3$ interfaces are usually assumed to occur electrostatically. However, increasing evidence suggests that non-local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, we sketch quasi-1D ballistic electron waveguides at the LaAlO$_3$/SrTiO$_3$ interface as a probe to understand how gate tunability varies as a function of spatial separation. Gate tunability measurements reveal the scaling law to be at odds with the pure electrostatic coupling observed in traditional semiconductor systems. The non-Coulombic gating at the interface is attributed to the existence of a long-range nanoelectromechanical coupling between the gate and electron waveguide, mediated by the ferroelastic domains in SrTiO$_3$. The long-range interactions at the LaAlO$_3$/SrTiO$_3$ interface add unexpected richness and complexity to this correlated electron system. △ Less

Submitted 31 March, 2024; originally announced April 2024.

Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates

Authors: Mingyu Yu, Sahani Amaya Iddawela, Jiayang Wang, Maria Hilse, Jessica L. Thompson, Danielle Reifsnyder Hickey, Susan B Sinnott, Stephanie Law

Abstract: GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift… ▽ More GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates using molecular beam epitaxy. It yields smooth thin GaSe films with the rare γ'-polymorph. We analyze the formation mechanism of γ'-GaSe using density functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ'-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/3D quasi-van der Waals epitaxial growth. △ Less

Submitted 14 June, 2024; v1 submitted 18 March, 2024; originally announced March 2024.

Room temperature quantum emitters in van der Waals α-MoO3

Authors: Jeonghan Lee, Haiyuan Wang, Keun-Yeol Park, Soonsang Huh, Donghan Kim, Mihyang Yu, Changyoung Kim, Kristian Sommer Thygesen, Jieun Lee

Abstract: Quantum emitters in solid-state materials are highly promising building blocks for quantum information processing and communication science. Recently, single-photon emission from van der Waals materials has been reported in transition metal dichalcogenides and hexagonal boron nitride, exhibiting the potential to realize photonic quantum technologies in two-dimensional materials. Here, we report th… ▽ More Quantum emitters in solid-state materials are highly promising building blocks for quantum information processing and communication science. Recently, single-photon emission from van der Waals materials has been reported in transition metal dichalcogenides and hexagonal boron nitride, exhibiting the potential to realize photonic quantum technologies in two-dimensional materials. Here, we report the generation of room temperature single-photon emission from exfoliated and thermally annealed single crystals of van der Waals α-MoO3. The second-order correlation function measurement displays a clear photon antibunching, while the luminescence intensity exceeds 0.4 Mcts/s and remains stable under laser excitation. The theoretical calculation suggests that an oxygen vacancy defect is a possible candidate for the observed emitters. Together with photostability and brightness, quantum emitters in α-MoO3 provide a new avenue to realize photon-based quantum information science in van der Waals materials. △ Less

Submitted 10 January, 2025; v1 submitted 14 March, 2024; originally announced March 2024.

Comments: 20 pages, 4 figures

Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications

Authors: Mingyu Yu, Maria Hilse, Qihua Zhang, Yongchen Liu, Zhengtianye Wang, Stephanie Law

Abstract: Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated with traditional 2D materials, they exhibit unique properties, including a wide bandgap range covering the ultraviolet to the mid-infrared spectral ranges, thickness-dependent bandgap behaviors, good nonlinear optical perfo… ▽ More Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated with traditional 2D materials, they exhibit unique properties, including a wide bandgap range covering the ultraviolet to the mid-infrared spectral ranges, thickness-dependent bandgap behaviors, good nonlinear optical performance, high thermoelectric coefficients, and ferroelectricity. Consequently, these materials hold significant potential in diverse applications such as photodetectors, field effect transistors, thermoelectrics, ferroelectrics, photovoltaics, and electrochemical devices, especially in the manufacturing of nanoscale devices. However, there is still a lack of systematic understanding of the PTMMC family. This study provides a broad overview of the crystal structures, bandgap structures, synthesis methods, physical properties, and state-of-the-art applications of PTMMC materials with a motif of X-M-M-X (M=Ga, In, Ge, Sn; X=S, Se, Te). An outlook for the development trends is emphasized at the end, underscoring the critical importance of this work to the future exploration of nanolayered PTMMCs. △ Less

Submitted 5 March, 2024; originally announced March 2024.

Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth

Authors: Mingyu Yu, Jiayang Wang, Sahani A. Iddawela, Molly McDonough, Jessica L. Thompson, Susan B Sinnott, Danielle Reifsnyder Hickey, Stephanie Law

Abstract: GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing electronic devices. It is not only used to grow three-dimensional (3D) strongly-bonded materials, but has also been used as a substrate for layered, van der Waals (vdW)-bonded chalcogenide film growth. However, GaAs(111)B… ▽ More GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing electronic devices. It is not only used to grow three-dimensional (3D) strongly-bonded materials, but has also been used as a substrate for layered, van der Waals (vdW)-bonded chalcogenide film growth. However, GaAs(111)B wafers cannot be directly used for growing epitaxial vdW chalcogenide films for two reasons: (1) the GaAs surface has a substantial number of dangling bonds that need to be passivated for vdW layers growth; (2) the substrate surface is covered with a thin epi-ready oxide layer which must be removed before film growth. In this paper, we optimize the method for deoxidizing GaAs(111)B substrates under a Se overpressure and successfully create a smooth, deoxidized, and passivated substrate for subsequent growth of vdW chalcogenide materials. We demonstrate the benefits of this method for the growth of vdW chalcogenide thin films using GaSe as a representative of vdW chalcogenides. In addition, we find that severely aged substrates have difficulty maintaining a smooth surface during the deoxidation and passivation process and cause GaSe crystals to nucleate in random shapes and orientations. We describe a method using water droplet testing to determine the age of the substrate. Finally, X-ray photoelectron spectroscopy (XPS) characterization reveals that the natural aging of GaAs(111)B in the air results in an increase in surface oxides, Ga2O3 and As2O3, while exposure to ultraviolet (UV)-ozone not only enhances the contents of these two oxides but also generates a new oxide, As2O5. Our research contributes to expanding the compatibility of GaAs(111)B with diverse growth materials and the production of high-quality heterostructure devices. △ Less

Submitted 18 January, 2024; originally announced January 2024.

Bosonization and Anomaly Indicators of (2+1)-D Fermionic Topological Orders

Authors: Arun Debray, Weicheng Ye, Matthew Yu

Abstract: We provide a mathematical proposal for the anomaly indicators of symmetries of (2+1)-d fermionic topological orders, and work out the consequences of our proposal in several nontrivial examples. Our proposal is an invariant of a super modular tensor category with a fermionic group action, which gives a (3+1)-d topological field theory (TFT) that we conjecture to be invertible; the anomaly indicato… ▽ More We provide a mathematical proposal for the anomaly indicators of symmetries of (2+1)-d fermionic topological orders, and work out the consequences of our proposal in several nontrivial examples. Our proposal is an invariant of a super modular tensor category with a fermionic group action, which gives a (3+1)-d topological field theory (TFT) that we conjecture to be invertible; the anomaly indicators are partition functions of this TFT on $4$-manifolds generating the corresponding twisted spin bordism group. Our construction relies on a bosonization construction due to Gaiotto-Kapustin and Tata-Kobayashi-Bulmash-Barkeshli, together with a ``bosonization conjecture'' which we explain in detail. In the second half of the paper, we discuss several examples of our invariants relevant to condensed-matter physics. The most important example we consider is $\mathbb{Z}/4^T\times \mathbb{Z}/2^f$ time-reversal symmetry with symmetry algebra $\mathcal T^2 = (-1)^FC$, which many fermionic topological orders enjoy, including the $\mathrm{U}(1)_5$ spin Chern-Simons theory. Using newly developed tools involving the Smith long exact sequence, we calculate the cobordism group that classifies its anomaly, present the generating manifold, and calculate the partition function on the generating manifold which serves as our anomaly indicator. Our approach allows us to reproduce anomaly indicators known in the literature with simpler proofs, including $\mathbb{Z}/4^{Tf}$ time-reversal symmetry with symmetry algebra $\mathcal T^2 = (-1)^F$, and other symmetry groups in the 10-fold way involving Lie group symmetries. △ Less

Submitted 21 May, 2025; v1 submitted 20 December, 2023; originally announced December 2023.

Comments: 86 pages, comments welcome

Journal ref: Commun. Math. Phys. 406, 178 (2025)

Sketched Nanoscale KTaO3-Based Superconducting Quantum Interference Device

Authors: Muqing Yu, Nicholas Hougland, Qianheng Du, Junyi Yang, Sayanwita Biswas, Ranjani Ramachandran, Dengyu Yang, Anand Bhattacharya, David Pekker, Patrick Irvin, Jeremy Levy

Abstract: The discovery of two-dimensional superconductivity in LaAlO3/KTaO3 (111) and (110) interfaces has raised significant interest in this system. In this manuscript we report the first successful fabrication of a superconducting quantum interference device (DC-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope (c-AFM) lithog… ▽ More The discovery of two-dimensional superconductivity in LaAlO3/KTaO3 (111) and (110) interfaces has raised significant interest in this system. In this manuscript we report the first successful fabrication of a superconducting quantum interference device (DC-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope (c-AFM) lithography which can reversibly control the conductivity at the LAO/KTO(110) interface with nanoscale resolution. The periodic modulation of the SQUID critical current, Ic(B), with magnetic field corresponds well with our theoretical modeling, which reveals a large kinetic inductance of the superconducting two-dimensional electron gas in KTO. The kinetic inductance of the SQUID is tunable by electrical gating from the back, due to the large dielectric constant of KTO. The demonstration of weak links and SQUIDs in KTO broadens the scope for exploring the underlying physics of KTO superconductivity, including the role of spin-orbit-coupling, pairing symmetry, and inhomogeneity. It also promotes KTO as a versatile platform for a growing family of quantum devices, which could be applicable in the realm of quantum computing and information. △ Less

Submitted 1 October, 2024; v1 submitted 24 October, 2023; originally announced October 2023.

Comments: 44 pages, 23 figures

Electronic-grade epitaxial (111) KTaO3 heterostructures

Authors: Jieun Kim, Muqing Yu, Jung-Woo Lee, Shun-Li Shang, Gi-Yeop Kim, Pratap Pal, Jinsol Seo, Neil Campbell, Kitae Eom, Ranjani Ramachandran, Mark S. Rzchowski, Sang Ho Oh, Si-Young Choi, Zi-Kui Liu, Jeremy Levy, Chang-Beom Eom

Abstract: KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-g… ▽ More KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-grade epitaxial (111) KTaO3 thin films. Electrical and structural characterizations reveal that two-dimensional electron gas at the heterointerface between amorphous LaAlO3 and KTaO3 thin film exhibits significantly higher electron mobility, superconducting transition temperature and critical current density than those in bulk single crystal KTaO3-based heterostructures owing to cleaner interface in KTaO3 thin films. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Tailoring the ferromagnetic surface potential landscape by a templating two-dimensional metal-organic porous network

Authors: Lu Lyu, Martin Anstett, Ka Man Yu, Azadeh Kadkhodazadeh, Martin Aeschlimann, Benjamin Stadtmüller

Abstract: Two-dimensional metal-organic porous networks (2D-MOPNs) have been identified as versatile nanoarchitectures to tailor surface electronic and magnetic properties on noble metals. In this context, we propose a protocol to redecorate a ferromagnetic surface potential landscape using a 2D-MOPN. Ultrathin cobalt (Co) films grown on Au(111) exhibit a well-ordered surface triangular reconstruction. On t… ▽ More Two-dimensional metal-organic porous networks (2D-MOPNs) have been identified as versatile nanoarchitectures to tailor surface electronic and magnetic properties on noble metals. In this context, we propose a protocol to redecorate a ferromagnetic surface potential landscape using a 2D-MOPN. Ultrathin cobalt (Co) films grown on Au(111) exhibit a well-ordered surface triangular reconstruction. On the ferromagnetic surface, the adsorbed 2,4,6-tris(4-pyridyl)-1,3,5triazine (T4PT) molecules can coordinate with the native Co atoms to form a large-scale Co-T4PT porous network. The Co-T4PT network with periodic nanocavities serves as a templating layer to reshape the ferromagnetic surface potential. The subsequently deposited C60 molecules are steered by the network porous potential and the neighboring C60 interactions. The prototype of the ferromagnetic-supported 2D-MOPN is a promising template for the tailoring of molecular electronic and spin properties. △ Less

Submitted 13 July, 2023; originally announced July 2023.

High Density Fabrication Process for Single Flux Quantum Circuits

Authors: D. Yohannes, M. Renzullo, J. Vivalda, A. C. Jacobs, M. Yu, J. Walter, A. F. Kirichenko, I. V. Vernik, O. A. Mukhanov

Abstract: We implemented, optimized and fully tested over multiple runs a superconducting Josephson junction fabrication process tailored for the integrated digital circuits that are used for control and readout of superconducting qubits operating at millikelvin temperatures. This process was optimized for highly energy efficient single flux quantum (ERSFQ) circuits with the critical currents reduced by fac… ▽ More We implemented, optimized and fully tested over multiple runs a superconducting Josephson junction fabrication process tailored for the integrated digital circuits that are used for control and readout of superconducting qubits operating at millikelvin temperatures. This process was optimized for highly energy efficient single flux quantum (ERSFQ) circuits with the critical currents reduced by factor of ~10 as compared to those operated at 4.2 K. Specifically, it implemented Josephson junctions with 10 uA unit critical current fabricated with a 10 uA/um2 critical current density. In order to circumvent the substantial size increase of the SFQ circuit inductors, we employed a NbN high kinetic inductance layer (HKIL) with a 8.5 pH/sq sheet inductance. Similarly, to maintain the small size of junction resistive shunts, we used a non-superconducting PdAu alloy with a 4.0 ohm/sq sheet resistance. For integration with quantum circuits in a multi-chip module, 5 and 10 um height bump processes were also optimized. To keep the fabrication process in check, we developed and thoroughly tested a comprehensive Process Control Monitor chip set. △ Less

Submitted 18 June, 2023; v1 submitted 12 May, 2023; originally announced May 2023.

Comments: 10 pages, 5 figures, 1 table

Journal ref: Appl. Phys. Lett., vol. 122, 212601, 2023

Critical resolved shear stresses for slip and twinning in Mg-Y-Ca alloys and their effect on the ductility

Authors: Mingdi Yu, Yuchi Cui, Jingya Wang, Yiwen Chen, Zhigang Ding, Tao Ying, Javier Llorca, Xiaoqin Zeng

Abstract: The deformation mechanisms of an extruded Mg-5Y-0.08Ca (wt. %) alloy were analyzed by means of micropillar compression tests on single crystals along different orientations -- selected to activate specific deformation modes -- as well as slip trace analysis, transmission electron microscopy and transmission Kikuchi diffraction. The polycrystalline alloy presented a remarkable ductility in tension… ▽ More The deformation mechanisms of an extruded Mg-5Y-0.08Ca (wt. %) alloy were analyzed by means of micropillar compression tests on single crystals along different orientations -- selected to activate specific deformation modes -- as well as slip trace analysis, transmission electron microscopy and transmission Kikuchi diffraction. The polycrystalline alloy presented a remarkable ductility in tension (~32%) and negligible differences in the yield strength between tension and compression. It was found that the presence of Y and Ca in solid solution led to a huge increase in the CRSS for <a> basal slip (29 $\pm$ 5 MPa), <c+a> pyramidal slip (203 $\pm$ 7 MPa) and tensile twin nucleation (above 148 MPa), while the CRSS for <a> prismatic slip only increases up to 105 $\pm$ 4 MPa. The changes in the CRSS for slip and tensile twinning in Mg-Y-Ca alloys expectedly modify the dominant deformation mechanisms in polycrystals. In particular, tensile twinning is replaced by <a> prismatic slip during compressive deformation along the a-axis. The reduction of twinning (which generally induces strong anisotropy in the plastic deformation in textured alloys), and the activation of <a> prismatic slip (which provides an additional plastic deformation mechanism with limited hardening) were responsible for the large tensile ductility of the alloy. △ Less

Submitted 28 January, 2023; originally announced January 2023.

Journal ref: International Journal of Plasticity, 162, 103525, 2023

Carbon Kagome Nanotubes -- quasi-one-dimensional nanostructures with flat bands

Authors: Hsuan Ming Yu, Shivam Sharma, Shivang Agarwal, Olivia Liebman, Amartya S. Banerjee

Abstract: We introduce carbon Kagome nanotubes (CKNTs) -- a new allotrope of carbon formed by rolling up sheets of Kagome graphene, and investigate the properties of this material using first principles calculations. Based on the direction of rolling, we identify two principal varieties of CKNTs -- armchair and zigzag, and find that the bending stiffness associated with rolling Kagome graphene into either t… ▽ More We introduce carbon Kagome nanotubes (CKNTs) -- a new allotrope of carbon formed by rolling up sheets of Kagome graphene, and investigate the properties of this material using first principles calculations. Based on the direction of rolling, we identify two principal varieties of CKNTs -- armchair and zigzag, and find that the bending stiffness associated with rolling Kagome graphene into either type of CKNT is about a third of that associated with rolling conventional graphene into carbon nanotubes (CNTs). Ab initio molecular dynamics simulations indicate that both types of CKNTs are likely to exist as stable structures at room temperature. Each CKNT explored here is metallic and features dispersionless states (i.e., flat bands) throughout its Brillouin zone, along with an associated singular peak in the electronic density of states, close to the Fermi level. We calculate the mechanical and electronic response of CKNTs to torsional and axial strains and compare against conventional CNTs. We show in particular, that upon twisting, degenerate dispersionless electronic states in CKNTs split, Dirac points and partially flat bands emerge from the quadratic band crossing point at the Fermi level, and that these features can be explained using a relatively simple tight-binding model. Overall, CKNTs appear to be unique and striking examples of realistic elemental quasi-one-dimensional (1D) materials that can potentially display fascinating collective material properties arising from the presence of strongly correlated electrons. Additionally, distorted CKNTs may provide an interesting material platform where flat band physics and chirality induced anomalous transport effects may be studied together. △ Less

Submitted 14 December, 2023; v1 submitted 24 January, 2023; originally announced January 2023.

Surface acoustic wave generation and detection in quantum paraelectric regime of SrTiO$_3$-based heterostructure

Authors: Dengyu Yang, Muqing Yu, Yun-Yi Pai, Patrick Irvin, Hyungwoo Lee, Kitae Eom, Chang-Beom Eom, Jeremy Levy

Abstract: Strontium titanate (STO), apart from being a ubiquitous substrate for complex-oxide heterostructures, possesses a multitude of strongly-coupled electronic and mechanical properties. Surface acoustic wave (SAW) generation and detection offers insight into electromechanical couplings that are sensitive to quantum paraelectricity and other structural phase transitions. Propagating SAWs can interact w… ▽ More Strontium titanate (STO), apart from being a ubiquitous substrate for complex-oxide heterostructures, possesses a multitude of strongly-coupled electronic and mechanical properties. Surface acoustic wave (SAW) generation and detection offers insight into electromechanical couplings that are sensitive to quantum paraelectricity and other structural phase transitions. Propagating SAWs can interact with STO-based electronic nanostructures, in particular LaAlO$_3$/SrTiO$_3$ (LAO/STO). Here we report generation and detection of SAW within LAO/STO heterointerfaces at cryogenic temperatures ($T\ge$~2 K) using superconducting interdigitated transducers (IDTs). The temperature dependence shows an increase in the SAWs quality factor that saturates at $T\approx 8 $ K. The effect of backgate tuning on the SAW resonance frequency shows the possible acoustic coupling with the ferroelastic domain wall evolution. This method of generating SAWs provides a pathway towards dynamic tuning of ferroelastic domain structures, which are expected to influence electronic properties of complex-oxide nanostructures. Devices which incorporate SAWs may in turn help to elucidate the role of ferroelastic domain structures in mediating electronic behavior. △ Less

Submitted 12 January, 2023; originally announced January 2023.

First Principles Assessment of CdTe as a Tunnel Barrier at the $\mathbfα$-Sn/InSb Interface

Authors: Malcolm J. A. Jardine, Derek Dardzinski, Maituo Yu, Amrita Purkayastha, A. -H. Chen, Yu-Hao Chang, Aaron Engel, Vladimir N. Strocov, Moïra Hocevar, Chris J. Palmstrøm, Sergey M. Frolov, Noa Marom

Abstract: Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as $β$-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, a… ▽ More Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as $β$-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between $α$-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [npj Computational Materials 6, 180 (2020)]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for $α$-Sn and CdTe. For CdTe, the z-unfolding method [Advanced Quantum Technologies, 5, 2100033 (2022)] is used to resolve the contributions of different $k_z$ values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/$α$-Sn, InSb/CdTe, and CdTe/$α$-Sn, as well as in tri-layer interfaces of InSb/CdTe/$α$-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the $α$-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments. △ Less

Submitted 7 January, 2023; originally announced January 2023.

Journal ref: ACS Appl. Mater. Interfaces 2023

Epitaxial growth of atomically thin Ga2Se2 films on c-plane sapphire substrates

Authors: Mingyu Yu, Lottie Murray, Matthew Doty, Stephanie Law

Abstract: Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic properties when it reaches the atomically-thin regime. However, its van der Waals epitaxial growth, especially for the atomically-thin films, has seldom been stud… ▽ More Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic properties when it reaches the atomically-thin regime. However, its van der Waals epitaxial growth, especially for the atomically-thin films, has seldom been studied. In this paper, we used molecular beam epitaxy to synthesize Ga2Se2 single-crystal films with a surface roughness down to 1.82 nm on c-plane sapphire substrates by optimizing substrate temperature, Se:Ga flux ratio, and growth rate. Then we used a 3-step mode to grow Ga2Se2 films with a thickness as low as 3 tetralayers and a surface roughness as low as 0.61 nm, far exceeding the performance of direct growth. Finally, we found that the surface morphology strongly depends on the Se:Ga flux ratio, and higher growth rates widened the suitable flux ratio window for growing Ga2Se2. Overall, this work advances the understanding of the vdW epitaxy growth mechanism for post-transition metal monochalcogenides on sapphire substrates. △ Less

Submitted 16 October, 2023; v1 submitted 22 December, 2022; originally announced December 2022.

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

Authors: Brett Heischmidt, Maituo Yu, Derek Dardzinski, James Etheridge, Saeed Moayedpour, Vlad S. Pribiag, Paul A. Crowell, Noa Marom

Abstract: We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in… ▽ More We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 $μ_B$ are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti$_2$MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni$_2$MnIn induces in the InAs. This is explained by the position of the transition metal $d$ states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics. △ Less

Submitted 7 January, 2023; v1 submitted 28 September, 2022; originally announced September 2022.

Periodic Coupled-Cluster Green's Function for Photoemission Spectra of Realistic Solids

Authors: Katelyn Laughon, Jason M. Yu, Tianyu Zhu

Abstract: We present an efficient implementation of coupled-cluster Green's function (CCGF) method for simulating photoemission spectra of periodic systems. We formulate the periodic CCGF approach with Brillouin zone sampling in Gaussian basis at the coupled-cluster singles and doubles (CCSD) level. To enable CCGF calculations of realistic solids, we propose an active-space self-energy correction scheme by… ▽ More We present an efficient implementation of coupled-cluster Green's function (CCGF) method for simulating photoemission spectra of periodic systems. We formulate the periodic CCGF approach with Brillouin zone sampling in Gaussian basis at the coupled-cluster singles and doubles (CCSD) level. To enable CCGF calculations of realistic solids, we propose an active-space self-energy correction scheme by combining CCGF with cheaper many-body perturbation theory (GW) and implement the model order reduction (MOR) frequency interpolation technique. We find that the active-space self-energy correction and MOR techniques significantly reduce the computational cost of CCGF while maintaining the high accuracy. We apply the developed CCGF approaches to compute spectral properties and band structure of silicon (Si) and zinc oxide (ZnO) crystals using triple-$ζ$ Gaussian basis and medium-size k-point sampling, and find good agreement with experimental measurements. △ Less

Submitted 15 August, 2022; originally announced August 2022.

Comments: 7 pages, 4 figures, 1 table

Journal ref: J. Phys. Chem. Lett. 13, 9122-9128 (2022)

Experimental demonstration of topological bounds in quantum metrology

Authors: Min Yu, Xiangbei Li, Yaoming Chu, Bruno Mera, F. Nur Ünal, Pengcheng Yang, Yu Liu, Nathan Goldman, Jianming Cai

Abstract: Quantum metrology is deeply connected to quantum geometry, through the fundamental notion of quantum Fisher information. Inspired by advances in topological matter, it was recently suggested that the Berry curvature and Chern numbers of band structures can dictate strict lower bounds on metrological properties, hence establishing a strong connection between topology and quantum metrology. In this… ▽ More Quantum metrology is deeply connected to quantum geometry, through the fundamental notion of quantum Fisher information. Inspired by advances in topological matter, it was recently suggested that the Berry curvature and Chern numbers of band structures can dictate strict lower bounds on metrological properties, hence establishing a strong connection between topology and quantum metrology. In this work, we provide a first experimental verification of such topological bounds, by performing optimal quantum multi-parameter estimation and achieving the best possible measurement precision. By emulating the band structure of a Chern insulator, we experimentally determine the metrological potential across a topological phase transition, and demonstrate strong enhancement in the topologically non-trivial regime. Our work opens the door to metrological applications empowered by topology, with potential implications for quantum many-body systems. △ Less

Submitted 19 November, 2022; v1 submitted 1 June, 2022; originally announced June 2022.

Comments: 6 pages, 4 figures + 13 pages (SI), comments are welcome

Journal ref: National Science Review, 11, nwae065 (2024)

Electrical Charge Control of h-BN Single Photon Sources

Authors: Mihyang Yu, Donggyu Yim, Hosung Seo, Jieun Lee

Abstract: Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic quantum communications, the ability to electrically activate the single photon fluorescence using an external electric field is crucial. In this work, we show th… ▽ More Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic quantum communications, the ability to electrically activate the single photon fluorescence using an external electric field is crucial. In this work, we show the electrical switching of the photoluminescence from h-BN quantum emitters, enabled by the controllable electron transfer from the nearby charge reservoir. By tuning the Fermi level of graphene next to the h-BN defects, we observed luminescence brightening of a quantum emitter upon the application of a voltage due to the direct charge state manipulation. In addition, the correlation measurement of the single photon sources with the graphene's Raman spectroscopy allows us to extract the exact charge transition level of quantum emitters, providing the information on the crystallographic nature of the defect structure. With the complete on-off switching of emission intensity of h-BN quantum emitters using a voltage, our result paves the way for the van der Waals colour centre based photonic quantum information processing, cryptography and memory applications. △ Less

Submitted 9 June, 2022; v1 submitted 18 February, 2022; originally announced February 2022.

Comments: 14 pages, 5 figures

Journal ref: 2D Mater. 9 (2022) 035020

Machine learning based prediction of the electronic structure of quasi-one-dimensional materials under strain

Authors: Shashank Pathrudkar, Hsuan Ming Yu, Susanta Ghosh, Amartya S. Banerjee

Abstract: We present a machine learning based model that can predict the electronic structure of quasi-one-dimensional materials while they are subjected to deformation modes such as torsion and extension/compression. The technique described here applies to important classes of materials such as nanotubes, nanoribbons, nanowires, miscellaneous chiral structures and nano-assemblies, for all of which, tuning… ▽ More We present a machine learning based model that can predict the electronic structure of quasi-one-dimensional materials while they are subjected to deformation modes such as torsion and extension/compression. The technique described here applies to important classes of materials such as nanotubes, nanoribbons, nanowires, miscellaneous chiral structures and nano-assemblies, for all of which, tuning the interplay of mechanical deformations and electronic fields is an active area of investigation in the literature. Our model incorporates global structural symmetries and atomic relaxation effects, benefits from the use of helical coordinates to specify the electronic fields, and makes use of a specialized data generation process that solves the symmetry-adapted equations of Kohn-Sham Density Functional Theory in these coordinates. Using armchair single wall carbon nanotubes as a prototypical example, we demonstrate the use of the model to predict the fields associated with the ground state electron density and the nuclear pseudocharges, when three parameters - namely, the radius of the nanotube, its axial stretch, and the twist per unit length - are specified as inputs. Other electronic properties of interest, including the ground state electronic free energy, can then be evaluated with low-overhead post-processing, typically to chemical accuracy. We also show how the nuclear coordinates can be reliably determined from the pseudocharge field using a clustering based technique. Remarkably, only about 120 data points are found to be enough to predict the three dimensional electronic fields accurately, which we ascribe to the symmetry in the problem setup, the use of low-discrepancy sequences for sampling, and presence of intrinsic low-dimensional features in the electronic fields. We comment on the interpretability of our machine learning model and discuss its possible future applications. △ Less

Submitted 25 April, 2022; v1 submitted 2 February, 2022; originally announced February 2022.

Journal ref: Phys. Rev. B 105, 195141, 2022

Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces

Authors: Muqing Yu, Changjiang Liu, Dengyu Yang, Xi Yan, Qianheng Du, Dillon D. Fong, Anand Bhattacharya, Patrick Irvin, Jeremy Levy

Abstract: Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces.… ▽ More Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultra-low-voltage electron-beam lithography. At low temperatures, KTO-based devices show superconductivity that is tunable by an applied back gate. A nanowire device shows single-electron-transistor (SET) behavior. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions. △ Less

Submitted 7 January, 2022; originally announced January 2022.

Comments: 19 pages, 9 figures

Journal ref: Nano Letters 22, 15, 6062-6068 (2022)

Gauging Categorical Symmetries in 3d Topological Orders and Bulk Reconstruction

Authors: Matthew Yu

Abstract: We use the language of categorical condensation to give a procedure for gauging nonabelian anyons, which are the manifestations of categorical symmetries in three spacetime dimensions. We also describe how the condensation procedure can be used in other contexts such as for topological cosets and constructing modular invariants. By studying a generalization of which anyons are condensable, we arri… ▽ More We use the language of categorical condensation to give a procedure for gauging nonabelian anyons, which are the manifestations of categorical symmetries in three spacetime dimensions. We also describe how the condensation procedure can be used in other contexts such as for topological cosets and constructing modular invariants. By studying a generalization of which anyons are condensable, we arrive at representations of congruence subgroups of the modular group. We finally present an analysis for ungauging anyons, which is related to the problem of constructing a Drinfeld center for a fusion category; this procedure we refer to as bulk reconstruction. We introduce a set of consistency relations regarding lines in the parent theory and wall category. Through use of these relations along with the $S$-matrix elements of the child theory, we construct $S$-matrix elements of a parent theory in a number of examples. △ Less

Submitted 9 April, 2023; v1 submitted 26 November, 2021; originally announced November 2021.

Comments: 65 pages, comments welcome

Atomic and mesoscopic structure of Dy-based surface alloys on noble metals

Authors: Sina Mousavion, Ka Man Yu, Mahalingam Maniraj, Lu Lyu, Johannes Knippertz, Benjamin Stadtmüller, Martin Aeschlimann

Abstract: Surface alloys are a highly tunable class of low dimensional materials with the opportunity to tune and control the spin and charge carrier functionalities on the nanoscale. Here, we focus on the atomic and mesoscopic structural details of three distinctive binary rare-earth-noble metals (RE/NM) surface alloys by employing scanning tunneling microscopy (STM) and low energy electron diffraction (LE… ▽ More Surface alloys are a highly tunable class of low dimensional materials with the opportunity to tune and control the spin and charge carrier functionalities on the nanoscale. Here, we focus on the atomic and mesoscopic structural details of three distinctive binary rare-earth-noble metals (RE/NM) surface alloys by employing scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Using Dysprosium as the guest element on fcc(111) noble metal substrates, we identify the formation of non-commensurate surface alloy superstructures which exhibit homogeneous moiré patterns for DyCu2/Cu (111) and DyAu2/Au(111), while an inhomogeneous one is found for DyAg2/Ag(111). The variations in the local structure are analyzed for all three surface alloys and the observed differences are discussed in the light of the lattice mismatches of the alloy layer with respect to the underlying substrate. For the particularly intriguing case of a Dy-Ag surface alloy, the surface alloy layer does not show a uniform long-range periodic structure, but consists of local hexagonal tiles separated by extended domain walls. These domain walls exist to relief the in-plane strain within the DyAg2 surface alloy layer. Our findings clearly demonstrate that surface alloying is an intriguing tool to tailor both the local atomic, but also the mesoscopic moiré structures of metallic heterostructures. △ Less

Submitted 3 March, 2022; v1 submitted 23 November, 2021; originally announced November 2021.

Subsurface Carbon-Induced Local Charge of Copper for On-Surface Displacement Reaction

Authors: Shaoshan Wang, Pengcheng Ding, Zhuo Li, Cristina Mattioli, Wenlong E, Ye Sun, André Gourdon, Lev Kantorovich, Flemming Besenbacher, Xueming Yang, Miao Yu

Abstract: Transition metal carbides have sparked unprecedented enthusiasm as high-performance catalysts in recent years. Still, the catalytic properties of copper (Cu) carbide remain unexplored. By introducing subsurface carbon (C) to Cu(111), displacement reaction of proton in carboxyl acid group with single Cu atom is demonstrated at the atomic scale and room temperature. Its occurrence is attributed to t… ▽ More Transition metal carbides have sparked unprecedented enthusiasm as high-performance catalysts in recent years. Still, the catalytic properties of copper (Cu) carbide remain unexplored. By introducing subsurface carbon (C) to Cu(111), displacement reaction of proton in carboxyl acid group with single Cu atom is demonstrated at the atomic scale and room temperature. Its occurrence is attributed to the C-doping induced local charge of surface Cu atoms (up to +0.30 e/atom), which accelerates the rate of on-surface deprotonation via reduction of the corresponding energy barrier, thus enabling the instant displacement of a proton with a Cu atom when the molecules land on the surface. Such well-defined and robust Cu$^{δ+}$ surface based on the subsurface C doping offers a novel catalytic platform for on-surface synthesis. △ Less

Submitted 14 September, 2021; originally announced September 2021.

Comments: Angewandte Chemie International Edition, Wiley-VCH Verlag, 2021

Topological Orders in (4+1)-Dimensions

Authors: Theo Johnson-Freyd, Matthew Yu

Abstract: We investigate the Morita equivalences of (4+1)-dimensional topological orders. We show that any (4+1)-dimensional super (fermionic) topological order admits a gapped boundary condition -- in other words, all (4+1)-dimensional super topological orders are Morita trivial. As a result, there are no inherently gapless super (3+1)-dimensional theories. On the other hand, we show that there are infinit… ▽ More We investigate the Morita equivalences of (4+1)-dimensional topological orders. We show that any (4+1)-dimensional super (fermionic) topological order admits a gapped boundary condition -- in other words, all (4+1)-dimensional super topological orders are Morita trivial. As a result, there are no inherently gapless super (3+1)-dimensional theories. On the other hand, we show that there are infinitely many algebraically Morita-inequivalent bosonic (4+1)-dimensional topological orders. △ Less

Submitted 19 July, 2022; v1 submitted 9 April, 2021; originally announced April 2021.

Comments: 18 pages, 2 figures

Journal ref: SciPost Phys. 13, 068 (2022)

Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration

Authors: Maituo Yu, Saeed Moayedpour, Shuyang Yang, Derek Dardzinski, Chunzhi Wu, Vlad S. Pribiag, Noa Marom

Abstract: Recently, the EuS/InAs interface has attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction [npj Comput. Mater. 6, 180 (2020)] to elucidate the effect of the bonding configuration at the interfa… ▽ More Recently, the EuS/InAs interface has attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction [npj Comput. Mater. 6, 180 (2020)] to elucidate the effect of the bonding configuration at the interface on the electronic structure. For all interface configurations considered here, we find that the EuS valence band maximum (VBM) lies below the InAs VBM. In addition, dispersed states emerge at the top of the InAs VBM at the interface, which do not exist in either material separately. These states are contributed mainly by the InAs layer adjacent to the interface. They are localized at the interface and may be attributed to charge transfer from the EuS to the InAs. The interface configuration affects the position of the EuS VBM with respect to the InAs VBM, as well as the dispersion of the interface state. For all interface configurations studied here, the induced magnetic moment in the InAs is small. This suggests that this interface, in its coherent form studied here, is not promising for inducing equilibrium magnetic properties in InAs. △ Less

Submitted 4 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. Materials 5, 064606 (2021)

Density functional theory method for twisted geometries with application to torsional deformations in group-IV nanotubes

Authors: Hsuan Ming Yu, Amartya S. Banerjee

Abstract: We present a real-space formulation and implementation of Kohn-Sham Density Functional Theory suited to twisted geometries, and apply it to the study of torsional deformations of X (X = C, Si, Ge, Sn) nanotubes. Our formulation is based on higher order finite difference discretization in helical coordinates, uses ab intio pseudopotentials, and naturally incorporates rotational (cyclic) and screw o… ▽ More We present a real-space formulation and implementation of Kohn-Sham Density Functional Theory suited to twisted geometries, and apply it to the study of torsional deformations of X (X = C, Si, Ge, Sn) nanotubes. Our formulation is based on higher order finite difference discretization in helical coordinates, uses ab intio pseudopotentials, and naturally incorporates rotational (cyclic) and screw operation (i.e., helical) symmetries. We discuss several aspects of the computational method, including the form of the governing equations, details of the numerical implementation, as well as its convergence, accuracy and efficiency properties. The technique presented here is particularly well suited to the first principles simulation of quasi-one-dimensional structures and their deformations, and many systems of interest can be investigated using small simulation cells containing just a few atoms. We apply the method to systematically study the properties of single-wall zigzag and armchair group-IV nanotubes, as they undergo twisting. For the range of deformations considered, the mechanical behavior of the tubes is found to be largely consistent with isotropic linear elasticity, with the torsional stiffness varying as the cube of the nanotube radius. Furthermore, for a given tube radius, this quantity is seen to be highest for carbon nanotubes and the lowest for those of tin, while nanotubes of silicon and germanium have intermediate values close to each other. We also describe different aspects of the variation in electronic properties of the nanotubes as they are twisted. In particular, we find that akin to the well known behavior of armchair carbon nanotubes, armchair nanotubes of silicon, germanium and tin also exhibit bandgaps that vary periodically with imposed rate of twist, and that the periodicity of the variation scales in an inverse quadratic manner with the tube radius. △ Less

Submitted 18 April, 2022; v1 submitted 26 February, 2021; originally announced March 2021.

Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations

Authors: Kingsley O. Egbo, Chao Ping Liu, Chinedu E. Ekuma, Kin Man Yu

Abstract: Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and… ▽ More Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and Ni-rich NiO with O vacancies (NiO:VO). The optical properties were obtained by spectroscopic ellipsometry, while valence band spectra were probed by high-resolution x-ray photoelectron spectroscopy. The experimental results are directly compared to first-principles density functional theory + U calculations. Computational results confirm that gap states are present in both NiO systems with vacancies. Gap states in NiO:Vo are predominantly Ni 3d states, while those in NiO:VNi are composed of both Ni 3d and O 2p states. The absorption spectra of the NiO:VNi sample show significant defect-induced features below 3.0 eV compared to NiO and NiO:VO samples. The increase in sub-gap absorptions in NiO:VNi can be attributed to gap states observed in the electronic density of states. The relation between native vacancy defects and electronic and optical properties of NiO are demonstrated, showing that at similar vacancy concentration, the optical constants of NiO:VNi deviate significantly from those of NiO:VO. Our experimental and computational results reveal that although VNi are effective acceptors in NiO, they also degrade the visible transparency of the material. Hence, for transparent optoelectronic device applications, an optimization of native VNi defects with extrinsic doping is required to simultaneously enhance p-type conductivity and transparency. △ Less

Submitted 7 October, 2020; originally announced October 2020.

Comments: 25 Pages, 5 Figures

Journal ref: J. Appl. Phys. 128, 135705 (2020)

Symmetries and Anomalies of (1+1)d Theories: 2-groups and Symmetry Fractionalization

Authors: Matthew Yu

Abstract: We investigate the interactions of discrete zero-form and one-form global symmetries in (1+1)d theories. Focus is put on the interactions that the symmetries can have on each other, which in this low dimension result in 2-group symmetries or symmetry fractionalization. A large part of the discussion will be to understand a major feature in (1+1)d: the multiple sectors into which a theory decompose… ▽ More We investigate the interactions of discrete zero-form and one-form global symmetries in (1+1)d theories. Focus is put on the interactions that the symmetries can have on each other, which in this low dimension result in 2-group symmetries or symmetry fractionalization. A large part of the discussion will be to understand a major feature in (1+1)d: the multiple sectors into which a theory decomposes. We perform gauging of the one-form symmetry, and remark on the effects this has on our theories, especially in the case when there is a global 2-group symmetry. We also implement the spectral sequence to calculate anomalies for the 2-group theories and symmetry fractionalized theory in the bosonic and fermionic cases. Lastly, we discuss topological manipulations on the operators which implement the symmetries, and draw insights on the (1+1)d effects of such manipulations by coupling to a bulk (2+1)d theory. △ Less

Submitted 19 December, 2020; v1 submitted 2 October, 2020; originally announced October 2020.

Comments: 35 pages, 7 figures

Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography

Authors: Dengyu Yang, Shan Hao, Jun Chen, Qing Guo, Muqing Yu, Yang Hu, KiTae Eom, Jung-Woo Lee, Chang-Beom Eom, Patrick Irvin, Jeremy Levy

Abstract: We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing techniqu… ▽ More We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods. △ Less

Submitted 29 August, 2020; originally announced August 2020.

Comments: 4 figures

Polarization and localization of single-photon emitters in hexagonal boron nitride wrinkles

Authors: Donggyu Yim, Mihyang Yu, Gichang Noh, Jieun Lee, Hosung Seo

Abstract: Color centers in 2-dimensional hexagonal boron nitride (h-BN) have recently emerged as stable and bright single-photon emitters (SPEs) operating at room temperature. In this study, we combine theory and experiment to show that vacancy-based SPEs selectively form at nano-scale wrinkles in h-BN with its optical dipole preferentially aligned to the wrinkle direction. By using density functional theor… ▽ More Color centers in 2-dimensional hexagonal boron nitride (h-BN) have recently emerged as stable and bright single-photon emitters (SPEs) operating at room temperature. In this study, we combine theory and experiment to show that vacancy-based SPEs selectively form at nano-scale wrinkles in h-BN with its optical dipole preferentially aligned to the wrinkle direction. By using density functional theory calculations, we find that the wrinkle curvature plays a crucial role in localizing vacancy-based SPE candidates and aligning the defects symmetry plane to the wrinkle direction. By performing optical measurements on SPEs created in h-BN single-crystal flakes, we experimentally confirm the wrinkle-induced generation of SPEs and their polarization alignment to the wrinkle direction. Our results not only provide a new route to controlling the atomic position and the optical property of the SPEs but also revealed the possible crystallographic origin of the SPEs in h-BN, greatly enhancing their potential for use in solid-state quantum photonics and quantum information processing. △ Less

Submitted 3 August, 2020; originally announced August 2020.

Comments: 32 pages including supplementary information, 4 figures

Journal ref: ACS Applied Materials and Interfaces (2020)

Multilayer InSe-Te van der Waals heterostructures with ultrahigh rectification ratio and ultrasensitive photoresponse

Authors: Fanglu Qin, Feng Gao, Mingjin Dai, Yunxia Hu, Miaomiao Yu, Lifeng Wang, PingAn Hu, Wei Feng

Abstract: Multilayer van der Waals (vdWs) semiconductors have great promising application in high-performance optoelectronic devices. However, the photoconductive photodetectors based on layered semiconductors often suffer from large dark current and high external driven bias voltage. Here, we report a vertical van der Waals heterostructures (vdWHs) consisting of multilayer indium selenide (InSe) and tellur… ▽ More Multilayer van der Waals (vdWs) semiconductors have great promising application in high-performance optoelectronic devices. However, the photoconductive photodetectors based on layered semiconductors often suffer from large dark current and high external driven bias voltage. Here, we report a vertical van der Waals heterostructures (vdWHs) consisting of multilayer indium selenide (InSe) and tellurium (Te). The multilayer InSe-Te vdWHs device shows a record high forward rectification ratio greater than 107 at room temperature. Furthermore, an ultrasensitive and broadband photoresponse photodetector is achieved by the vdWHs device with an ultrahigh photo/dark current ratio over 104, a high detectivity of 1013, and a comparable responsivity of 0.45 A/W under visible light illumination with weak incident power. Moreover, the vdWHs device has a photovoltaic effect and can function as a self-powered photodetector (SPPD). The SPPD is also ultrasensitive to the broadband spectra ranging from 300 nm to 1000 nm and is capable of detecting weak light signals. This work offers an opportunity to develop next-generation electronic and optoelectronic devices based on multilayer vdWs structures. △ Less

Submitted 21 January, 2020; originally announced January 2020.

Comments: 16 pages, 4 figures

Tailoring the Energy Gap of Hybrid Hexagonal Boron Nitride Sheets Embedded with Carbon Domains of Different Shapes and Sizes

Authors: Cherno B. Kah, M. Yu, Chakram S. Jayanthi

Abstract: We present in this work the size-dependent and shape-dependent properties of carbon domains in hybrid h-BN/C sheets with the goal of tailoring their energy gaps. We have considered triangular, hexagonal, circular, and rectangular carbon domains embedded in h-BN sheets and optimized the structure of these h-BN/C sheets using the recently developed semi-empirical method, referred as SCED-LCAO. Calcu… ▽ More We present in this work the size-dependent and shape-dependent properties of carbon domains in hybrid h-BN/C sheets with the goal of tailoring their energy gaps. We have considered triangular, hexagonal, circular, and rectangular carbon domains embedded in h-BN sheets and optimized the structure of these h-BN/C sheets using the recently developed semi-empirical method, referred as SCED-LCAO. Calculated energy gaps of hybrid h-BN/C sheets exhibit interesting size- and shape-dependent properties. The energy gap of h-BN/C sheets embedded with rectangular domains shows a semi-metal behavior, while the size-dependence of the energy gap of hexagonal carbon domains exhibit a power-law decrease, and that of the energy gap of h-BN/C sheets with circular carbon domains show an oscillatory behavior. It is evident from the density of states calculations that the reduction in the energy gap of hybrid h-BN/C sheets compared to pristine h-BN sheets mainly arises from carbon domains. The bond distortions due to competing bond lengths (C-C, C-B, C-N, B-N, etc.) at the domain boundary also introduce states in the gap and this is particularly evident in sheets with smaller carbon domains. △ Less

Submitted 7 January, 2020; originally announced January 2020.

Comments: 21 pages, 7 figures, and 2 tables

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Authors: Zhe Cheng, Yee Rui Koh, Abdullah Mamun, Jingjing Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan, Samuel Graham

Abstract: AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to i… ▽ More AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices. △ Less

Submitted 4 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Materials 4, 044602 (2020)

Electronic structure of bulk manganese oxide and nickel oxide from coupled cluster theory

Authors: Yang Gao, Qiming Sun, Jason M. Yu, Mario Motta, James McClain, Alec F. White, Austin J. Minnich, Garnet Kin-Lic Chan

Abstract: We describe the ground- and excited-state electronic structure of bulk MnO and NiO, two prototypical correlated electron materials, using coupled cluster theory with single and double excitations (CCSD). As a corollary, this work also reports the first implementation of unrestricted periodic ab initio equation-of motion CCSD. Starting from a Hartree-Fock reference, we find fundamental gaps of 3.46… ▽ More We describe the ground- and excited-state electronic structure of bulk MnO and NiO, two prototypical correlated electron materials, using coupled cluster theory with single and double excitations (CCSD). As a corollary, this work also reports the first implementation of unrestricted periodic ab initio equation-of motion CCSD. Starting from a Hartree-Fock reference, we find fundamental gaps of 3.46 eV and 4.83 eV for MnO and NiO respectively for the 16 unit supercell, slightly overestimated compared to experiment, although finite-size scaling suggests that the gap is more severely overestimated in the thermodynamic limit. From the character of the correlated electronic bands we find both MnO and NiO to lie in the intermediate Mott/charge-transfer insulator regime, although NiO appears as a charge transfer insulator when only the fundamental gap is considered. While the lowest quasiparticle excitations are of metal 3d and O 2p character in most of the Brillouin zone, near the Γ point, the lowest conduction band quasiparticles are of s character. Our study supports the potential of coupled cluster theory to provide high level many-body insights into correlated solids. △ Less

Submitted 8 October, 2019; v1 submitted 4 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. B 101, 165138 (2020)

Deep learning of topological phase transitions from entanglement aspects

Authors: Yuan-Hong Tsai, Meng-Zhe Yu, Yu-Hao Hsu, Ming-Chiang Chung

Abstract: The one-dimensional $p$-wave superconductor proposed by Kitaev has long been a classic example for understanding topological phase transitions through various methods, such as examining Berry phase, edge states of open chains and, in particular, aspects from quantum entanglement of ground states. In order to understand the amount of information carried in the entanglement-related quantities, here… ▽ More The one-dimensional $p$-wave superconductor proposed by Kitaev has long been a classic example for understanding topological phase transitions through various methods, such as examining Berry phase, edge states of open chains and, in particular, aspects from quantum entanglement of ground states. In order to understand the amount of information carried in the entanglement-related quantities, here we study topological phase transitions of the model with emphasis of using the deep learning approach. We feed different quantities, including Majorana correlation matrices (MCMs), entanglement spectra (ES) or entanglement eigenvectors (EE) originated from Block correlation matrices (BCMs), into the deep neural networks for training, and investigate which one could be the most useful input format in this approach. We find that ES is indeed too compressed information compared to MCM or EE. MCM and EE can provide us abundant information to recognize not only the topological phase transitions in the model but also phases of matter with different $U$(1) gauges, which is not reachable by using ES only. △ Less

Submitted 26 December, 2019; v1 submitted 10 September, 2019; originally announced September 2019.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 102, 054512 (2020)

Surface states in bulk single crystal of topological semimetal Co$_3$Sn$_2$S$_2$ towards water oxidation

Authors: Guowei Li, Qiunan Xu, Wujun Shi, Chenguang Fu, Lin Jiao, Machteld E. Kamminga, Mingquan Yu, Harun Tüysüz, Nitesh Kumar, Vicky Süß, Rana Saha, Abhay K. Srivastava, Steffen Wirth, Gudrun Auffermann, Johannes Gooth, Stuart Parkin, Yan Sun, Enke Liu, Claudia Felser

Abstract: The band inversion in topological phase matters bring exotic physical properties such as the emergence of a topologically protected surface states. They strongly influence the surface electronic structures of the investigated materials and could serve as a good platform to gain insight into the catalytic mechanism of surface reactions. Here we synthesized high-quality bulk single crystals of the t… ▽ More The band inversion in topological phase matters bring exotic physical properties such as the emergence of a topologically protected surface states. They strongly influence the surface electronic structures of the investigated materials and could serve as a good platform to gain insight into the catalytic mechanism of surface reactions. Here we synthesized high-quality bulk single crystals of the topological semimetal Co$_3$Sn$_2$S$_2$. We found that at room temperature, Co$_3$Sn$_2$S$_2$ naturally hosts the band structure of a topological semimetal. This guarantees the existence of robust surface states from the Co atoms. Bulk single crystal of Co$_3$Sn$_2$S$_2$ exposes their Kagome lattice that constructed by Co atoms and have high electrical conductivity. They serves as catalytic centers for oxygen evolution process (OER), making bonding and electron transfer more efficient due to the partially filled $e_g$ orbital. The bulk single crystal exhibits outstanding OER catalytic performance, although the surface area is much smaller than that of Co-based nanostructured catalysts. Our findings emphasize the importance of tailoring topological non-trivial surface states for the rational design of high-activity electrocatalysts. △ Less

Submitted 22 August, 2019; originally announced August 2019.

Comments: 16 pages, 4 figures

Journal ref: Science Advances 5, eaaw9867 (2019)