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Tailoring the ferromagnetic surface potential landscape by a templating two-dimensional metal-organic porous network
Authors:
Lu Lyu,
Martin Anstett,
Ka Man Yu,
Azadeh Kadkhodazadeh,
Martin Aeschlimann,
Benjamin Stadtmüller
Abstract:
Two-dimensional metal-organic porous networks (2D-MOPNs) have been identified as versatile nanoarchitectures to tailor surface electronic and magnetic properties on noble metals. In this context, we propose a protocol to redecorate a ferromagnetic surface potential landscape using a 2D-MOPN. Ultrathin cobalt (Co) films grown on Au(111) exhibit a well-ordered surface triangular reconstruction. On t…
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Two-dimensional metal-organic porous networks (2D-MOPNs) have been identified as versatile nanoarchitectures to tailor surface electronic and magnetic properties on noble metals. In this context, we propose a protocol to redecorate a ferromagnetic surface potential landscape using a 2D-MOPN. Ultrathin cobalt (Co) films grown on Au(111) exhibit a well-ordered surface triangular reconstruction. On the ferromagnetic surface, the adsorbed 2,4,6-tris(4-pyridyl)-1,3,5triazine (T4PT) molecules can coordinate with the native Co atoms to form a large-scale Co-T4PT porous network. The Co-T4PT network with periodic nanocavities serves as a templating layer to reshape the ferromagnetic surface potential. The subsequently deposited C60 molecules are steered by the network porous potential and the neighboring C60 interactions. The prototype of the ferromagnetic-supported 2D-MOPN is a promising template for the tailoring of molecular electronic and spin properties.
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Submitted 13 July, 2023;
originally announced July 2023.
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Atomic and mesoscopic structure of Dy-based surface alloys on noble metals
Authors:
Sina Mousavion,
Ka Man Yu,
Mahalingam Maniraj,
Lu Lyu,
Johannes Knippertz,
Benjamin Stadtmüller,
Martin Aeschlimann
Abstract:
Surface alloys are a highly tunable class of low dimensional materials with the opportunity to tune and control the spin and charge carrier functionalities on the nanoscale. Here, we focus on the atomic and mesoscopic structural details of three distinctive binary rare-earth-noble metals (RE/NM) surface alloys by employing scanning tunneling microscopy (STM) and low energy electron diffraction (LE…
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Surface alloys are a highly tunable class of low dimensional materials with the opportunity to tune and control the spin and charge carrier functionalities on the nanoscale. Here, we focus on the atomic and mesoscopic structural details of three distinctive binary rare-earth-noble metals (RE/NM) surface alloys by employing scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Using Dysprosium as the guest element on fcc(111) noble metal substrates, we identify the formation of non-commensurate surface alloy superstructures which exhibit homogeneous moiré patterns for DyCu2/Cu (111) and DyAu2/Au(111), while an inhomogeneous one is found for DyAg2/Ag(111). The variations in the local structure are analyzed for all three surface alloys and the observed differences are discussed in the light of the lattice mismatches of the alloy layer with respect to the underlying substrate. For the particularly intriguing case of a Dy-Ag surface alloy, the surface alloy layer does not show a uniform long-range periodic structure, but consists of local hexagonal tiles separated by extended domain walls. These domain walls exist to relief the in-plane strain within the DyAg2 surface alloy layer. Our findings clearly demonstrate that surface alloying is an intriguing tool to tailor both the local atomic, but also the mesoscopic moiré structures of metallic heterostructures.
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Submitted 3 March, 2022; v1 submitted 23 November, 2021;
originally announced November 2021.
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Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations
Authors:
Kingsley O. Egbo,
Chao Ping Liu,
Chinedu E. Ekuma,
Kin Man Yu
Abstract:
Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and…
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Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and Ni-rich NiO with O vacancies (NiO:VO). The optical properties were obtained by spectroscopic ellipsometry, while valence band spectra were probed by high-resolution x-ray photoelectron spectroscopy. The experimental results are directly compared to first-principles density functional theory + U calculations. Computational results confirm that gap states are present in both NiO systems with vacancies. Gap states in NiO:Vo are predominantly Ni 3d states, while those in NiO:VNi are composed of both Ni 3d and O 2p states. The absorption spectra of the NiO:VNi sample show significant defect-induced features below 3.0 eV compared to NiO and NiO:VO samples. The increase in sub-gap absorptions in NiO:VNi can be attributed to gap states observed in the electronic density of states. The relation between native vacancy defects and electronic and optical properties of NiO are demonstrated, showing that at similar vacancy concentration, the optical constants of NiO:VNi deviate significantly from those of NiO:VO. Our experimental and computational results reveal that although VNi are effective acceptors in NiO, they also degrade the visible transparency of the material. Hence, for transparent optoelectronic device applications, an optimization of native VNi defects with extrinsic doping is required to simultaneously enhance p-type conductivity and transparency.
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Submitted 7 October, 2020;
originally announced October 2020.
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THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN
Authors:
J. N. Heyman,
E. M. Weiss,
J. R. Rollag,
K. M. Yu,
O. D. Dubon,
Y. J. Kuang,
C. W. Tu,
W. Walukiewicz
Abstract:
THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bim…
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THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2E-8 +/-0.8E-8 cm3/s. We discuss the implications for applications in solar energy.
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Submitted 10 May, 2018;
originally announced May 2018.
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Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor
Authors:
J. N. Heyman,
A. M. Schwartzberg,
K. M. Yu,
A. V. Luce,
O. D. Dubon,
Y. J. Kuang,
C. W. Tu,
W. Walukiewicz
Abstract:
We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 we find that the electron population in the conduction band decays exponen…
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We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 we find that the electron population in the conduction band decays exponentially with a time constant 23ps. The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r = 2 10^-8 cm-3/s. In our experiment an optical pump pulse excited electrons from the valance band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption was probed with a delayed white light pulse. We modeled the optical properties of our samples using the band anti-crossing model to extract carrier densities as a function of time. These results indicate that the minority carrier lifetimes are too short for efficient solar power conversion and that improvements in material quality will be required for practical applications of GaPAsN based intermediate band solar cells.
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Submitted 18 August, 2016;
originally announced August 2016.
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Composition determination of quaternary GaAsPN layers from single XRD measurement of quasi-forbidden (002) reflection
Authors:
J. -M. Tilli,
H. Jussila,
K. M. Yu,
T. Huhtio,
M. Sopanen
Abstract:
GaAsPN layers with a thickness of 30nm were grown on GaP substrates with metalorganic vapor phase epitaxy to study the feasibility of a single X-ray diffraction (XRD) measurement for full composition determination of quaternary layer material. The method is based on the peak intensity of a quasi-forbidden (002) reflection which is shown to vary with changing arsenic content for GaAsPN. The method…
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GaAsPN layers with a thickness of 30nm were grown on GaP substrates with metalorganic vapor phase epitaxy to study the feasibility of a single X-ray diffraction (XRD) measurement for full composition determination of quaternary layer material. The method is based on the peak intensity of a quasi-forbidden (002) reflection which is shown to vary with changing arsenic content for GaAsPN. The method works for thin films with a wide range of arsenic contents and shows a clear variation in the reflection intensity as a function of changing layer composition. The obtained thicknesses and compositions of the grown layers are compared with accurate reference values obtained by Rutherford backscattering spectroscopy combined with nuclear reaction analysis measurements. Based on the comparison, the error in the XRD defined material composition becomes larger with increasing nitrogen content and layer thickness. This suggests that the dominating error source is the deteriorated crystal quality due to the nonsubstitutional incorporation of nitrogen into the crystal lattice and strain relaxation. The results reveal that the method overestimates the arsenic and nitrogen content within error margins of about 0.12 and about 0.025, respectively.
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Submitted 22 May, 2014;
originally announced May 2014.
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Response to the comment of K.W. Edmonds et al. on the article 'Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band'
Authors:
M. Dobrowolska,
X. Liu,
J. K. Furdyna,
M. Berciu,
K. M. Yu,
W. Walukiewicz
Abstract:
Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form.
Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form.
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Submitted 16 November, 2012;
originally announced November 2012.
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Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
Authors:
M. Dobrowolska,
K. Tivakornsasithorn,
X. Liu,
J. K. Furdyna,
M. Berciu,
K. M. Yu,
W. Walukiewicz
Abstract:
The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In…
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The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In this paper we combine results of channeling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines TC through determining the degree of hole localization. This finding differs drastically from the often accepted view that TC is controlled by valence band holes, thus opening new avenues for achieving higher values of TC.
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Submitted 8 March, 2012;
originally announced March 2012.
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Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
Authors:
C. D. Weis,
C. C. Lo,
V. Lang,
A. M. Tyryshkin,
R. E. George,
K. M. Yu,
J. Bokor,
S. A. Lyon,
J. J. L. Morton,
T. Schenkel
Abstract:
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms…
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We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.
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Submitted 26 February, 2012; v1 submitted 7 February, 2012;
originally announced February 2012.
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Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP
Authors:
T. E. Winkler,
P. R. Stone,
Tian Li,
K. M. Yu,
A. Bonanni,
O. D. Dubon
Abstract:
We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflec…
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We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hopping is the dominant transport mechanism in the presence of compensation.
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Submitted 14 December, 2010; v1 submitted 7 October, 2010;
originally announced October 2010.
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Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy
Authors:
P. R. Stone,
C. Bihler,
M. Kraus,
M. A. Scarpulla,
J. W. Beeman,
K. M. Yu,
M. S. Brandt,
O. D. Dubon
Abstract:
We report the effect of dilute alloying of the anion sublattice with S on the in-plane uniaxial magnetic anisotropy and magnetization reversal process in Ga1-xMnxP as measured by both ferromagnetic resonance (FMR) and superconducting quantum interference device (SQUID) magnetometry. At T=5K, raising the S concentration increases the uniaxial magnetic anisotropy between in-plane <011> directions…
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We report the effect of dilute alloying of the anion sublattice with S on the in-plane uniaxial magnetic anisotropy and magnetization reversal process in Ga1-xMnxP as measured by both ferromagnetic resonance (FMR) and superconducting quantum interference device (SQUID) magnetometry. At T=5K, raising the S concentration increases the uniaxial magnetic anisotropy between in-plane <011> directions while decreasing the magnitude of the (negative) cubic anisotropy field. Simulation of the SQUID magnetometry indicates that the energy required for the nucleation and growth of domain walls decreases with increasing y. These combined effects have a marked influence on the shape of the field-dependent magnetization curves; while the direction remains the easy axis in the plane of the film, the field dependence of the magnetization develops double hysteresis loops in the [011] direction as the S concentration increases similar to those observed for perpendicular magnetization reversal in lightly doped Ga1-xMnxAs. The incidence of double hysteresis loops is explained with a simple model whereby magnetization reversal occurs by a combination of coherent spin rotation and noncoherent spin switching, which is consistent with both FMR and magnetometry experiments. The evolution of magnetic properties with S concentration is attributed to compensation of Mn acceptors by S donors, which results in a lowering of the concentration of holes that mediate ferromagnetism.
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Submitted 3 November, 2008;
originally announced November 2008.
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Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism
Authors:
P. R. Stone,
K. Alberi,
S. K. Z. Tardif,
J. W. Beeman,
K. M. Yu,
W. Walukiewicz,
O. D. Dubon
Abstract:
We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4 % As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario i…
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We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4 % As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 K to 60 K (100 K to 65 K) upon the introduction of 3.1 % P (1% N) into the As sublattice.
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Submitted 23 July, 2008;
originally announced July 2008.
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Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting
Authors:
M. A. Scarpulla,
R. Farshchi,
P. R. Stone,
R. V. Chopdekar,
K. M. Yu,
Y. Suzuki,
O. D. Dubon
Abstract:
We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ion implantation and pulsed-laser melting (II-PLM). The field and temperature-dependent magnetization, magnetic anisotropy, temperature-dependent resistivity, magnetoresistance, and Hall effect of II-PLM Ga1-xMnxAs films have all of the characteristic si…
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We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ion implantation and pulsed-laser melting (II-PLM). The field and temperature-dependent magnetization, magnetic anisotropy, temperature-dependent resistivity, magnetoresistance, and Hall effect of II-PLM Ga1-xMnxAs films have all of the characteristic signatures of the strong p-d interaction of holes and Mn ions observed in the dilute hole-mediated ferromagnetic phase. The ferromagnetic and electrical transport properties of II-PLM films correspond to the peak substitutional Mn concentration meaning that the non-uniform Mn depth distribution is unimportant in determining the film properties. Good quantitative agreement is found with films grown by low temperature molecular beam epitaxy (LT-MBE) and having the similar substitutional Mn_Ga composition. Additionally, we demonstrate that II-PLM Ga1-xMnxAs films are free from interstitial Mn_I because of the high temperature processing. At high Mn implantation doses the kinetics of solute redistribution during solidification alone determine the maximum resulting Mn_Ga concentration. Uniaxial anisotropy between in-plane [-110]and [110] directions is present in II-PLM Ga1-xMnxAs giving evidence for this being an intrinsic property of the carrier-mediated ferromagnetic phase.
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Submitted 10 April, 2008;
originally announced April 2008.
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Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors
Authors:
Peter R. Stone,
Jeffrey W. Beeman,
Kin M. Yu,
Oscar D. Dubon
Abstract:
We have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga1-xMnxP1-yNy/GaP and Ga1-xMnxAs1-yPy/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminisc…
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We have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga1-xMnxP1-yNy/GaP and Ga1-xMnxAs1-yPy/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga1-xMnxAs grown on larger lattice constant (In,Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III-Mn-V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga1-xMnxAs1-yPy with increasing y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases.
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Submitted 30 July, 2007;
originally announced July 2007.
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Compositional tuning of ferromagnetism in Ga1-xMnxP
Authors:
R. Farshchi,
M. A. Scarpulla,
P. R. Stone,
K. M. Yu,
I. D. Sharp,
J. W. Beeman,
H. H. Silvestri,
L. A. Reichertz,
E. E. Haller,
O. D. Dubon
Abstract:
We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 C leads to a quenching of ferromagneti…
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We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.
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Submitted 4 August, 2006;
originally announced August 2006.
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Mn L3,2 X-ray Absorption Spectroscopy And Magnetic Circular Dichroism In Ferromagnetic (Ga,Mn)P
Authors:
P. R. Stone,
M. A. Scarpulla,
R. Farshchi,
I. D. Sharp,
J. W. Beeman,
K. M. Yu,
E. Arenholz,
J. D. Denlinger,
E. E. Haller,
O. D. Dubon
Abstract:
We have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD) at the Mn L3,2 edges in ferromagnetic Ga1-xMnxP films for 0.018<x<0.042. Large XMCD asymmetries at the L3 edge indicate significant spin-polarization of the density of states at the Fermi energy. The spectral shapes of the XAS and XMCD are nearly identical with those for Ga1-xMnxAs indicating that the hybrid…
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We have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD) at the Mn L3,2 edges in ferromagnetic Ga1-xMnxP films for 0.018<x<0.042. Large XMCD asymmetries at the L3 edge indicate significant spin-polarization of the density of states at the Fermi energy. The spectral shapes of the XAS and XMCD are nearly identical with those for Ga1-xMnxAs indicating that the hybridization of Mn d states and anion p states is similar in the two materials. Finally, compensation with sulfur donors not only lowers the ferromagnetic Curie temperature but also reduces the spin polarization of the hole states.
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Submitted 15 July, 2006;
originally announced July 2006.
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Mn L3,2 X-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP
Authors:
P. R. Stone,
M. A. Scarpulla,
R. Farshchi,
I. D. Sharp,
E. E. Haller,
O. D. Dubon,
K. M. Yu,
J. W. Beeman,
E. Arenholz,
J. D. Denlinger,
H. Ohldag
Abstract:
We have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD)at the Mn L3,2 edges in ferromagnetic Ga1-xMnxP for 0.018<x<0.042. Large XMCD asymmetries at the L3 edge indicate significant spin-polarization of the density of states at the Fermi energy. The temperature dependence of the XMCD and moment per Mn of 2.67 Bohr magnetons calculated using sum rules are consisten…
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We have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD)at the Mn L3,2 edges in ferromagnetic Ga1-xMnxP for 0.018<x<0.042. Large XMCD asymmetries at the L3 edge indicate significant spin-polarization of the density of states at the Fermi energy. The temperature dependence of the XMCD and moment per Mn of 2.67 Bohr magnetons calculated using sum rules are consistent with magnetometry values. The spectral shapes of the XAS and XMCD are nearly identical with those for Ga1-xMnxAs indicating that the hybridization of Mn d and anion p states is similar in the two materials.
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Submitted 31 March, 2006;
originally announced April 2006.
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Effect of Native Defects on Optical Properties of InxGa1-xN Alloys
Authors:
S. X. Li,
E. E. Haller,
K. M. Yu,
W. Walukiewicz,
J. W. Ager III,
J. Wu,
W. Shan,
Hai Lu,
William J. Schaff
Abstract:
The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optic…
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The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model.
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Submitted 4 August, 2005;
originally announced August 2005.
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Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning
Authors:
K. Alberi,
A. Minor,
M. A. Scarpulla,
S. J. Chung,
D. E. Mars,
K. M. Yu,
W. Walukiewicz,
O. D. Dubon
Abstract:
A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is…
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A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated.
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Submitted 2 August, 2004;
originally announced August 2004.
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Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey
Authors:
M. A. Scarpulla,
K. M. Yu,
W. Walukiewicz,
O. D. Dubon
Abstract:
We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperat…
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We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization.
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Submitted 2 August, 2004;
originally announced August 2004.
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Diluted II-VI Oxide Semiconductors with Multiple Band Gaps
Authors:
K. M. Yu,
W. Walukiewicz,
J. Wu,
W. Shan,
J. W. Beeman,
M. A. Scarpulla,
O. D. Dubon,
P. Becla
Abstract:
We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. When only 1.…
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We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. When only 1.3% of Te atoms is replaced with oxygen in a Zn0.88Mn0.12Te crystal (with band gap of 2.32 eV) the resulting band structure consists of two direct band gaps with interband transitions at ~1.77 eV and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model in which the interactions between the oxygen-derived band and the conduction band are considered. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.
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Submitted 19 September, 2003;
originally announced September 2003.
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Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys
Authors:
T. Wojtowicz,
W. L. Lim,
X. Liu,
G. Cywinski,
M. Kutrowski,
L. V. Titova,
K. Yee,
M. Dobrowolska,
J. K. Furdyna,
K. M. Yu,
W. Walukiewicz,
G. B. Kim,
M. Cheon,
X. Chen,
S. M. Wang,
H. Luo,
I. Vurgaftman,
J. R. Meyer
Abstract:
We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system…
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We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.
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Submitted 1 July, 2003;
originally announced July 2003.
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Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping
Authors:
T. Wojtowicz,
W. L. Lim,
X. Liu,
M. Dobrowolska,
J. K. Furdyna,
K. M. Yu,
W. Walukiewicz,
I. Vurgaftman,
J. R. Meyer
Abstract:
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitat…
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The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth.
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Submitted 2 May, 2003;
originally announced May 2003.
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Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films
Authors:
A. Chaiken,
K. Nauka,
G. A. Gibson,
Heon Lee,
C. C. Yang,
J. Wu,
J. W. Ager,
K. M. Yu,
W. Walukiewicz
Abstract:
Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable kappa phase nucleates at the film surface and has a moderate resistivity. The microstructures of hot-deposited and post-annealed cold-deposited gamma…
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Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable kappa phase nucleates at the film surface and has a moderate resistivity. The microstructures of hot-deposited and post-annealed cold-deposited gamma films are quite different but the electronic properties are similar. The increase in the resistivity of amorphous In2Se3 films upon annealing is interpreted in terms of the replacement of In-In bonds with In-Se bonds during crystallization. Great care must be taken in the preparation of In2Se3 films for electrical measurements as the presence of excess chalcogen or surface oxidation may greatly affect the film properties.
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Submitted 19 March, 2003;
originally announced March 2003.
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Fundamental Curie temperature limit in ferromagnetic GaMnAs
Authors:
K. M. Yu,
W. Walukiewicz,
T. Wojtowicz,
W. L. Lim,
X. Liu,
U. Bindley,
M. Dobrowolska,
J. K. Furdyna
Abstract:
We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization measurements on a series of Ga(1-x-y)Mn(x)Be(y)As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T_C with increas…
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We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization measurements on a series of Ga(1-x-y)Mn(x)Be(y)As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T_C with increasing Be concentration, while the free hole concentration remains relatively constant at ~5x10^20 cm^-3. These results indicate that the concentrations of free holes and ferromagnetically active Mn spins are governed by the position of the Fermi level, which controls the formation energy of compensating interstitial Mn donors.
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Submitted 12 March, 2003;
originally announced March 2003.
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In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor
Authors:
T. Wojtowicz,
G. Cywinski,
W. L. Lim,
X. Liu,
M. Dobrowolska,
J. K. Furdyna,
K. M. Yu,
W. Walukiewicz,
G. B. Kim,
M. Cheon,
X. Chen,
S. M. Wang,
H. Luo
Abstract:
A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. T…
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A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism.
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Submitted 11 March, 2003;
originally announced March 2003.
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High-Temperature Hall Effect in Ga(1-x)Mn(x)As
Authors:
D. Ruzmetov,
J. Scherschligt,
David V. Baxter,
T. Wojtowicz,
X. Liu,
Y. Sasaki,
J. K. Furdyna,
K. M. Yu,
W. Walukiewicz
Abstract:
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to rho_xx^2(T), and including a constant diamagnetic contribution in the susceptibility. For all low re…
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The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to rho_xx^2(T), and including a constant diamagnetic contribution in the susceptibility. For all low resistivity samples this model provides excellent fits to the measured data up to T=380K and allows extraction of the hole concentration (p). The calculated p are compared to alternative methods of determining hole densities in these materials: pulsed high magnetic field (up to 55 Tesla) technique at low temperatures (less than the Curie temperature), and electrochemical capacitance- voltage profiling. We find that the Anomalous Hall Effect (AHE) contribution to rho_xy is substantial even well above the Curie temperature. Measurements of the Hall effect in this temperature regime can be used as a testing ground for theoretical descriptions of transport in these materials. We find that our data are consistent with recently published theories of the AHE, but they are inconsistent with theoretical models previously used to describe the AHE in conventional magnetic materials.
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Submitted 4 February, 2004; v1 submitted 1 February, 2003;
originally announced February 2003.
