Showing 1–21 of 21 results for author: Young, S

Benchmarking low-power flopping-mode spin qubit fidelities in Si/SiGe devices with alloy disorder

Authors: Steve M. Young, Mitchell Brickson, Jason R. Petta, N. Tobias Jacobson

Abstract: In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode significantly reduces the amount of power required to drive spin rotations. However, the susceptibility of flopping-mode spin qubits to charge noise, and conse… ▽ More In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode significantly reduces the amount of power required to drive spin rotations. However, the susceptibility of flopping-mode spin qubits to charge noise, and consequently their overall performance, has not been examined in detail. In this work, we simulate single-qubit gate fidelities of electrically driven spin rotations in an ensemble of devices configured to operate in both the single-dot and flopping-mode regimes. Our model accounts for the valley physics of conduction band electrons in silicon and realistic alloy disorder in the SiGe barrier layers, allowing us to investigate device-to-device variability. We include charge and magnetic noise, as well as spin relaxation processes arising from charge noise and electron-phonon coupling. We find that the two operating modes exhibit significantly different susceptibilities to the various noise sources, with valley splitting and spin relaxation times also playing a role in their relative performance. For realistic noise strengths, we find that single-dot gate fidelities are limited by magnetic noise while flopping-mode fidelities are primarily limited by charge noise and spin relaxation. For sufficiently long spin relaxation times, flopping-mode spin operation is feasible with orders-of-magnitude lower drive power and gate fidelities that are on par with conventional single-dot electric dipole spin resonance. △ Less

Submitted 13 March, 2025; originally announced March 2025.

Comments: 9 pages, 4 figures

Report number: SAND2025-02765O

Model validation and error attribution for a drifting qubit

Authors: Malick A. Gaye, Dylan Albrecht, Steve Young, Tameem Albash, N. Tobias Jacobson

Abstract: Qubit performance is often reported in terms of a variety of single-value metrics, each providing a facet of the underlying noise mechanism limiting performance. However, the value of these metrics may drift over long time-scales, and reporting a single number for qubit performance fails to account for the low-frequency noise processes that give rise to this drift. In this work, we demonstrate how… ▽ More Qubit performance is often reported in terms of a variety of single-value metrics, each providing a facet of the underlying noise mechanism limiting performance. However, the value of these metrics may drift over long time-scales, and reporting a single number for qubit performance fails to account for the low-frequency noise processes that give rise to this drift. In this work, we demonstrate how we can use the distribution of these values to validate or invalidate candidate noise models. We focus on the case of randomized benchmarking (RB), where typically a single error rate is reported but this error rate can drift over time when multiple passes of RB are performed. We show that using a statistical test as simple as the Kolmogorov-Smirnov statistic on the distribution of RB error rates can be used to rule out noise models, assuming the experiment is performed over a long enough time interval to capture relevant low frequency noise. With confidence in a noise model, we show how care must be exercised when performing error attribution using the distribution of drifting RB error rate. △ Less

Submitted 12 March, 2025; v1 submitted 27 November, 2024; originally announced November 2024.

Comments: 16 pages, 12 figures. v2. Updated to published version

Report number: SAND2025-02995J

Journal ref: Phys. Rev. B 111, 115303 (2025)

Muon-spin relaxation investigation of magnetic bistability in a crystalline organic radical compound

Authors: Alberto Hernandez-Melian, Benjamin M. Huddart, Francis L. Pratt, Stephen J. Blundell, Michelle B. Mills, Harrison K. S. Young, Kathryn E. Preuss, Tom Lancaster

Abstract: We present the results of a muon-spin relaxation ($μ^{+}$SR) investigation of the crystalline organic radical compound 4-(2-benzimidazolyl)-1,2,3,5-dithiadiazolyl (HbimDTDA), in which we demonstrate the hysteretic magnetic switching of the system that takes place at $T = 274 \pm 11\,\mathrm{K}$ caused by a structural phase transition. Muon-site analysis using electronic structure calculations sugg… ▽ More We present the results of a muon-spin relaxation ($μ^{+}$SR) investigation of the crystalline organic radical compound 4-(2-benzimidazolyl)-1,2,3,5-dithiadiazolyl (HbimDTDA), in which we demonstrate the hysteretic magnetic switching of the system that takes place at $T = 274 \pm 11\,\mathrm{K}$ caused by a structural phase transition. Muon-site analysis using electronic structure calculations suggests a range of candidate muon stopping sites. The sites are numerous and similar in energy but, significantly, differ between the two structural phases of the material. Despite the difference in the sites, the muon remains a faithful probe of the transition, revealing a dynamically-fluctuating magnetically disordered state in the low-temperature structural phase. In contrast, in the high temperature phase the relaxation is caused by static nuclear moments, with rapid electronic dynamics being motionally narrowed from the muon spectra. △ Less

Submitted 28 November, 2022; originally announced November 2022.

Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon

Authors: Steve M. Young, Aaron M. Katzenmeyer, Evan M. Anderson, Ting S. Luk, Jeffrey A. Ivie, Scott W. Schmucker, Xujiao Gao, Shashank Misra

Abstract: The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional doping. Previously it was shown that P:$δ$-layers pro… ▽ More The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional doping. Previously it was shown that P:$δ$-layers produce a distinct Drude tail feature in ellipsometry measurements. However, the ellipsometric spectra could not be properly fit by modeling the $δ$-layer as discrete layer of classical Drude metal. In particular, even for large broadening corresponding to extremely short relaxation times, a plasma resonance feature was anticipated but not evident in the experimental data. In this work, we develop a physically accurate description of this system, which reveals a general approach to designing thin films with intentionally suppressed plasma resonances. Our model takes into account the strong charge density confinement and resulting quantum mechanical description of a P:$δ$-layer. We show that the absence of a plasma resonance feature results from a combination of two factors: i), the sharply varying charge density profile due to strong confinement in the direction of growth; and ii), the effective mass and relaxation time anisotropy due to valley degeneracy. The plasma resonance reappears when the atoms composing the $δ$-layer are allowed to diffuse out from the plane of the layer, destroying its well-confined two-dimensional character that is critical to its novel electronic properties. △ Less

Submitted 7 March, 2023; v1 submitted 19 October, 2022; originally announced October 2022.

Report number: SAND2023-12740O

Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits

Authors: Steve M. Young, N. Tobias Jacobson, Jason R. Petta

Abstract: Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to non-qubit states and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of… ▽ More Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to non-qubit states and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of these error sources and the valley degree of freedom on the performance of a cavity-mediated two-qubit iSWAP gate. For valley splittings inadequately large relative to the interdot tunnel coupling within each qubit, we find that valley excitation may be a limiter to the fidelity of this two-qubit gate. In addition, we show tradeoffs between gating times and exposure to various error sources, identifying optimal operating regimes and device improvements that would have the greatest impact on the fidelity of the cavity-mediated spin iSWAP. Importantly, we find that while the impact of charge noise and phonon relaxation favor operation in the regime where the qubits are most spin-like to reduce sensitivity to these sources of noise, the combination of hyperfine noise and valley physics shifts the optimal regime to charge-like qubits with stronger effective spin-photon coupling so that gate times can be made as short as possible. In this regime, the primary limitation is the need to avoid Landau-Zener transitions as the gate is implemented. △ Less

Submitted 23 August, 2022; originally announced August 2022.

Journal ref: Phys. Rev. Applied 18, 064082 (2022)

Nanoscale Architecture for Frequency-Resolving Single-Photon Detectors

Authors: Steve M. Young, Mohan Sarovar, François Léonard

Abstract: Single photon detectors play a key role across several basic science and technology applications. While progress has been made in improving performance, single photon detectors that can maintain high performance while also resolving the photon frequency are still lacking. By means of quantum simulations, we show that nanoscale elements cooperatively interacting with the photon field in a photodete… ▽ More Single photon detectors play a key role across several basic science and technology applications. While progress has been made in improving performance, single photon detectors that can maintain high performance while also resolving the photon frequency are still lacking. By means of quantum simulations, we show that nanoscale elements cooperatively interacting with the photon field in a photodetector architecture allow to simultaneously achieve high efficiency, low jitter, and high frequency resolution. We discuss how such cooperative interactions are essential to reach this performance regime, analyzing the factors that impact performance and trade-offs between metrics. We illustrate the potential performance for frequency resolution over a 1 eV bandwidth in the visible range, indicating near perfect detection efficiency, jitter of a few hundred femtoseconds, and frequency resolution of tens of meV. Finally, a potential physical realization of such an architecture is presented based on carbon nanotubes functionalized with quantum dots. △ Less

Submitted 9 August, 2023; v1 submitted 11 May, 2022; originally announced May 2022.

Comments: Published version

Journal ref: Communications Physics 6, 71 (2023)

General modeling framework for quantum photodetectors

Authors: Steve M. Young, Mohan Sarovar, François Léonard

Abstract: Photodetection plays a key role in basic science and technology, with exquisite performance having been achieved down to the single photon level. Further improvements in photodetectors would open new possibilities across a broad range of scientific disciplines, and enable new types of applications. However, it is still unclear what is possible in terms of ultimate performance, and what properties… ▽ More Photodetection plays a key role in basic science and technology, with exquisite performance having been achieved down to the single photon level. Further improvements in photodetectors would open new possibilities across a broad range of scientific disciplines, and enable new types of applications. However, it is still unclear what is possible in terms of ultimate performance, and what properties are needed for a photodetector to achieve such performance. Here, we present a general modeling framework for photodetectors whereby the photon field, the absorption process, and the amplification process are all treated as one coupled quantum system. The formalism naturally handles field states with single or multiple photons as well as a variety of detector configurations, and includes a mathematical definition of ideal photodetector performance. The framework reveals how specific photodetector architectures introduce limitations and tradeoffs for various performance metrics, providing guidance for optimization and design. △ Less

Submitted 19 November, 2018; originally announced November 2018.

Comments: To appear in Physical Review A

Data Mining for better material synthesis: the case of pulsed laser deposition of complex oxides

Authors: Steven R. Young, Artem Maksov, Maxim Ziatdinov, Ye Cao, Matthew Burch, Janakiraman Balachandran, Linglong Li, Suhas Somnath, Robert M. Patton, Sergei V. Kalinin, Rama K. Vasudevan

Abstract: The pursuit of more advanced electronics, finding solutions to energy needs, and tackling a wealth of social issues often hinges upon the discovery and optimization of new functional materials that enable disruptive technologies or applications. However, the discovery rate of these materials is alarmingly low. Much of the information that could drive this rate higher is scattered across tens of th… ▽ More The pursuit of more advanced electronics, finding solutions to energy needs, and tackling a wealth of social issues often hinges upon the discovery and optimization of new functional materials that enable disruptive technologies or applications. However, the discovery rate of these materials is alarmingly low. Much of the information that could drive this rate higher is scattered across tens of thousands of papers in the extant literature published over several decades, and almost all of it is not collated and thus cannot be used in its entirety. Many of these limitations can be circumvented if the experimentalist has access to systematized collections of prior experimental procedures and results that can be analyzed and built upon. Here, we investigate the property-processing relationship during growth of oxide films by pulsed laser deposition. To do so, we develop an enabling software tool to (1) mine the literature of relevant papers for synthesis parameters and functional properties of previously studied materials, (2) enhance the accuracy of this mining through crowd sourcing approaches, (3) create a searchable repository that will be a community-wide resource enabling material scientists to leverage this information, and (4) provide through the Jupyter notebook platform, simple machine-learning-based analysis to learn the complex interactions between growth parameters and functional properties (all data and codes available on https://github.com/ORNL-DataMatls). The results allow visualization of growth windows, trends and outliers, and which can serve as a template for analyzing the distribution of growth conditions, provide starting points for related compounds and act as feedback for first-principles calculations. Such tools will comprise an integral part of the materials design schema in the coming decade. △ Less

Submitted 1 March, 2018; v1 submitted 20 October, 2017; originally announced October 2017.

Comments: 30 pages; 8 figures

Filling-enforced Magnetic Dirac Semimetals in Two Dimensions

Authors: Steve M Young, Benjamin J. Wieder

Abstract: Filling-enforced Dirac semimetals, or those required at specific fillings by the combination of crystalline and time-reversal symmetries, have been proposed and discovered in numerous materials. However, Dirac points in these materials are not generally robust against breaking or modifying time-reversal symmetry. We present a new class of two-dimensional Dirac semimetal protected by the combinatio… ▽ More Filling-enforced Dirac semimetals, or those required at specific fillings by the combination of crystalline and time-reversal symmetries, have been proposed and discovered in numerous materials. However, Dirac points in these materials are not generally robust against breaking or modifying time-reversal symmetry. We present a new class of two-dimensional Dirac semimetal protected by the combination of crystal symmetries and a special, antiferromagnetic time-reversal symmetry. Systems in this class of magnetic layer groups, while having broken time-reversal symmetry, still respect the operation of time-reversal followed by a half-lattice translation. In contrast to 2D time-reversal-symmetric Dirac semimetal phases, this magnetic Dirac phase is capable of hosting just a single isolated Dirac point at the Fermi level, and that Dirac point can be stabilized solely by symmorphic crystal symmetries. We find that this Dirac point represents a new quantum critical point, and lives at the boundary between Chern insulating, antiferromagnetic topological crystalline insulating, and trivial insulating phases. We present density functional theoretic calculations which demonstrate the presence of this 2D magnetic Dirac semimetallic phase in FeSe monolayers and discuss the implications for engineering quantum phase transitions in these materials. △ Less

Submitted 24 May, 2017; v1 submitted 21 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. Lett. 118, 186401 (2017)

BaSn$_2$: A new, wide-gap, strong topological insulator

Authors: Steve M Young, S. Manni, Junping Shao, Paul C. Canfield, Aleksey N. Kolmogorov

Abstract: BaSn$_2$ has been shown to form as layers of buckled stanene intercalated by barium ions~\cite{Kim_2008}. However, despite an apparently straightforward synthesis and significant interest in stanene as a topological material, BaSn$_2$ has been left largely unexplored, and has only recently been recognized as a potential topological insulator. Belonging to neither the lead nor bismuth chalcogenide… ▽ More BaSn$_2$ has been shown to form as layers of buckled stanene intercalated by barium ions~\cite{Kim_2008}. However, despite an apparently straightforward synthesis and significant interest in stanene as a topological material, BaSn$_2$ has been left largely unexplored, and has only recently been recognized as a potential topological insulator. Belonging to neither the lead nor bismuth chalcogenide families, it would represent a unique manifestation of the topological insulating phase. Here we present a detailed investigation of BaSn$_2$, using both {\it ab initio} and experimental methods. First-principles calculations demonstrate that this overlooked material is a indeed strong topological insulator with a bulk band gap of 360meV, among the largest observed for topological insulators. We characterize the surface state dependence on termination chemistry, providing guidance for experimental efforts to measure and manipulate its topological properties. Additionally, through {\it ab initio} modeling and synthesis experiments we explore the stability and accessibility of this phase, revealing a complicated phase diagram that indicates a challenging path to obtaining single crystals. △ Less

Submitted 21 September, 2016; v1 submitted 18 July, 2016; originally announced July 2016.

Journal ref: Phys. Rev. B 95, 085116 (2017)

Ferrielectricity in an Organic Ferroelectric

Authors: James F. Scott, Finlay D. Morrison, Rebecca Clulow, Philip Lightfoot, Aurora Gherson, Sylvia C. Capelli, Michael R. Probert, S. Sahoo, James S. Young, Ram S. Katiyar

Abstract: We report ferrielectricity in a single-phase crystal, TSCC -- tris-sarcosine calcium chloride [(CH3NHCH2COOH)3CaCl2]. Ferrielectricity is well known in smectic liquid crystals but almost unknown in true crystalline solids. Pulvari reported it in 1960 in mixtures of ferroelectrics and antiferroelectrics, but only at high fields. TSCC exhibits a second-order displacive phase transition near Tc = 130… ▽ More We report ferrielectricity in a single-phase crystal, TSCC -- tris-sarcosine calcium chloride [(CH3NHCH2COOH)3CaCl2]. Ferrielectricity is well known in smectic liquid crystals but almost unknown in true crystalline solids. Pulvari reported it in 1960 in mixtures of ferroelectrics and antiferroelectrics, but only at high fields. TSCC exhibits a second-order displacive phase transition near Tc = 130 K that can be lowered to a Quantum Critical Point at zero Kelvin via Br- or I-substitution, and phases predicted to be antiferroelectric at high pressure and low temperatures. Unusually, the size of the primitive unit cell does not increase. We measure hysteresis loops and polarization below T = 64 K and clear Raman evidence for this transition, as well of another transition near 47-50 K. X-ray and neutron studies below Tc = 130K show there is an antiferroelectric displacement out of plane of two sarcosine groups; but these are antiparallel displacements are of different magnitude, leading to a bias voltage that grows with decreasing T. A monoclinic subgroup C2 may be possible at the lowest temperatures (T<64K or T<48K), but no direct evidence exists for a crystal class lower than orthorhombic. △ Less

Submitted 18 June, 2016; originally announced June 2016.

Comments: 21 pages; 8 figures; 25 references

Journal ref: Phys. Rev. B 95, 094119 (2017)

Substantial optical dielectric enhancement by volume compression in LiAsSe$_2$

Authors: Fan Zheng, John A. Brehm, Steve M. Young, Youngkuk Kim, Andrew M. Rappe

Abstract: Based on first-principles calculations, we predict a substantial increase in the optical dielectric function of LiAsSe$_2$ under pressure. We find that the optical dielectric constant is enhanced threefold under volume compression. This enhancement is mainly due to the dimerization strength reduction of the one-dimensional (1D) As--Se chains in LiAsSe$_2$, which significantly alters the wavefuncti… ▽ More Based on first-principles calculations, we predict a substantial increase in the optical dielectric function of LiAsSe$_2$ under pressure. We find that the optical dielectric constant is enhanced threefold under volume compression. This enhancement is mainly due to the dimerization strength reduction of the one-dimensional (1D) As--Se chains in LiAsSe$_2$, which significantly alters the wavefunction phase mismatch between two neighboring chains and changes the transition intensity. By developing a tight-binding model of the interacting 1D chains, the essential features of the low-energy electronic structure of LiAsSe$_2$ are captured. Our findings are important for understanding the fundamental physics of LiAsSe$_2$ and provide a feasible way to enhance the material optical response that can be applied to light harvesting for energy applications. △ Less

Submitted 28 August, 2015; originally announced August 2015.

Comments: 13 pages, 6 figures

First-principles materials design of high-performing bulk photovoltaics with the LiNbO$_3$ structure

Authors: Steve M. Young, Fan Zheng, Andrew M. Rappe

Abstract: The bulk photovoltaic effect is a long-known but poorly understood phenomenon. Recently, however, the multiferroic bismuth ferrite has been observed to produce strong photovoltaic response to visible light, suggesting that the effect has been underexploited as well. Here we present three polar oxides in the LiNbO$_3$ structure that we predict to have band gaps in the 1-2 eV range and very high bul… ▽ More The bulk photovoltaic effect is a long-known but poorly understood phenomenon. Recently, however, the multiferroic bismuth ferrite has been observed to produce strong photovoltaic response to visible light, suggesting that the effect has been underexploited as well. Here we present three polar oxides in the LiNbO$_3$ structure that we predict to have band gaps in the 1-2 eV range and very high bulk photovoltaic response: PbNiO$_3$, Mg$_{1/2}$Zn$_{1/2}$PbO$_3$, and LiBiO$_3$. All three have band gaps determined by cations with $d^{10}s^0$ electronic configurations, leading to conduction bands composed of cation $s$-orbitals and O $p$-orbitals. This both dramatically lowers the band gap and increases the bulk photovoltaic response by as much as an order of magnitude over previous materials, demonstrating the potential for high-performing bulk photovoltaics. △ Less

Submitted 24 August, 2015; originally announced August 2015.

Dirac Semimetals in Two Dimensions

Authors: Steve M. Young, Charles L. Kane

Abstract: Graphene is famous for being a host of 2D Dirac fermions. However, spin-orbit coupling introduces a small gap, so that graphene is formally a quantum spin hall insulator. Here we present symmetry-protected 2D Dirac semimetals, which feature Dirac cones at high-symmetry points that are \emph{not} gapped by spin-orbit interactions, and exhibit behavior distinct from both graphene and 3D Dirac semime… ▽ More Graphene is famous for being a host of 2D Dirac fermions. However, spin-orbit coupling introduces a small gap, so that graphene is formally a quantum spin hall insulator. Here we present symmetry-protected 2D Dirac semimetals, which feature Dirac cones at high-symmetry points that are \emph{not} gapped by spin-orbit interactions, and exhibit behavior distinct from both graphene and 3D Dirac semimetals. Using a two-site tight-binding model, we construct representatives of three possible distinct Dirac semimetal phases, and show that single symmetry-protected Dirac points are impossible in two dimensions. An essential role is played by the presence of non-symmorphic space group symmetries. We argue that these symmetries tune the system to the boundary between a 2D topological and trivial insulator. By breaking the symmetries we are able to access trivial and topological insulators as well as Weyl semimetal phases. △ Less

Submitted 20 August, 2015; v1 submitted 29 April, 2015; originally announced April 2015.

Journal ref: Phys. Rev. Lett. 115, 126803 (2015)

Bulk photovoltaic effect enhancement via electrostatic control in layered ferroelectrics

Authors: Fenggong Wang, Steve M. Young, Fan Zheng, Ilya Grinberg, Andrew M. Rappe

Abstract: The correlation between the shift current mechanism for the bulk photovoltaic effect (BPVE) and the structural and electronic properties of ferroelectric perovskite oxides is not well understood. Here, we study and engineer the shift current photovoltaic effect using a visible-light-absorbing ferroelectric Pb(Ni$_{x}$Ti$_{1-x}$)O$_{3-x}$ solid solution from first principles. We show that the coval… ▽ More The correlation between the shift current mechanism for the bulk photovoltaic effect (BPVE) and the structural and electronic properties of ferroelectric perovskite oxides is not well understood. Here, we study and engineer the shift current photovoltaic effect using a visible-light-absorbing ferroelectric Pb(Ni$_{x}$Ti$_{1-x}$)O$_{3-x}$ solid solution from first principles. We show that the covalent orbital character dicates the direction, magnitude, and onset energy of shift current in a predictable fashion. In particular, we find that the shift current response can be enhanced via electrostatic control in layered ferroelectrics, as bound charges face a stronger impetus to screen the electric field in a thicker material, delocalizing electron densities. This heterogeneous layered structure with alternative photocurrent generating and insulating layers is ideal for BPVE applications. △ Less

Submitted 2 March, 2015; originally announced March 2015.

Comments: Phys. Rev. Lett. (Submitted); 11 pages, 6 figures

First-Principles Calculation of the Bulk Photovoltaic Effect in the Polar Compounds LiAsS$_\text{2}$, LiAsSe$_\text{2}$, and NaAsSe$_\text{2}$

Authors: John A. Brehm, Steve M. Young, Fan Zheng, Andrew M. Rappe

Abstract: We calculate the shift current response, which has been identified as the dominant mechanism for the bulk photovoltaic effect, for the polar compounds LiAsS$_\text{2}$, LiAsSe$_\text{2}$, and NaAsSe$_\text{2}$. We find that the magnitudes of the photovoltaic responses in the visible range for these compounds exceed the maximum response obtained for BiFeO$_\text{3}$ by 10 - 20 times. We correlate t… ▽ More We calculate the shift current response, which has been identified as the dominant mechanism for the bulk photovoltaic effect, for the polar compounds LiAsS$_\text{2}$, LiAsSe$_\text{2}$, and NaAsSe$_\text{2}$. We find that the magnitudes of the photovoltaic responses in the visible range for these compounds exceed the maximum response obtained for BiFeO$_\text{3}$ by 10 - 20 times. We correlate the high shift current response with the existence of $p$ states at both the valence and conduction band edges, as well as the dispersion of these bands, while also showing that high polarization is not a requirement. With low experimental band gaps of less than 2 eV and high shift current response, these materials have potential for use as bulk photovoltaics. △ Less

Submitted 2 December, 2014; v1 submitted 12 August, 2014; originally announced August 2014.

Comments: 10 pages, 5 figures

Journal ref: J. Chem. Phys. 141, 204704 (2014)

Bulk Dirac points in distorted spinels

Authors: Julia A. Steinberg, Steve M. Young, Saad Zaheer, C. L. Kane, E. J. Mele, Andrew M. Rappe

Abstract: We report on a Dirac-like Fermi surface in three-dimensional bulk materials in a distorted spinel structure on the basis of density functional theory (DFT) as well as tight-binding theory. The four examples we provide in this paper are BiZnSiO4, BiCaSiO4, BiMgSiO4, and BiAlInO4. A necessary characteristic of these structures is that they contain a Bi lattice which forms a hierarchy of chain-like s… ▽ More We report on a Dirac-like Fermi surface in three-dimensional bulk materials in a distorted spinel structure on the basis of density functional theory (DFT) as well as tight-binding theory. The four examples we provide in this paper are BiZnSiO4, BiCaSiO4, BiMgSiO4, and BiAlInO4. A necessary characteristic of these structures is that they contain a Bi lattice which forms a hierarchy of chain-like substructures, with consequences for both fundamental understanding and materials design. △ Less

Submitted 23 September, 2013; originally announced September 2013.

Spin texture on the Fermi surface of tensile strained HgTe

Authors: Saad Zaheer, S. M. Young, D. Cellucci, J. C. Y. Teo, C. L. Kane, E. J. Mele, Andrew M. Rappe

Abstract: We present ab initio and k.p calculations of the spin texture on the Fermi surface of tensile strained HgTe, which is obtained by stretching the zincblende lattice along the (111) axis. Tensile strained HgTe is a semimetal with pointlike accidental degeneracies between a mirror symmetry protected twofold degenerate band and two nondegenerate bands near the Fermi level. The Fermi surface consists o… ▽ More We present ab initio and k.p calculations of the spin texture on the Fermi surface of tensile strained HgTe, which is obtained by stretching the zincblende lattice along the (111) axis. Tensile strained HgTe is a semimetal with pointlike accidental degeneracies between a mirror symmetry protected twofold degenerate band and two nondegenerate bands near the Fermi level. The Fermi surface consists of two ellipsoids which contact at the point where the Fermi level crosses the twofold degenerate band along the (111) axis. However, the spin texture of occupied states indicates that neither ellipsoid carries a compensating Chern number. Consequently, the spin texture is locked in the plane perpendicular to the (111) axis, exhibits a nonzero winding number in that plane, and changes winding number from one end of the Fermi ellipsoids to the other. The change in the winding of the spin texture suggests the existence of singular points. An ordered alloy of HgTe with ZnTe has the same effect as stretching the zincblende lattice in the (111) direction. We present ab initio calculations of ordered Hg_xZn_1-xTe that confirm the existence of a spin texture locked in a 2D plane on the Fermi surface with different winding numbers on either end. △ Less

Submitted 18 December, 2012; v1 submitted 4 June, 2012; originally announced June 2012.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B, Vol.87, 045202 (2013)

First principles calculations of the Shift Current Bulk Photovoltaic Effect in Ferroelectrics

Authors: Steve M. Young, Andrew M. Rappe

Abstract: We calculate the bulk photovoltaic response of the ferroelectrics BaTiO$_3$ and PbTiO$_3$ from first principles by applying "shift current" theory to the electronic structure from density functional theory. The first principles results for BaTiO$_3$ reproduce eperimental photocurrent direction and magnitude as a function of light frequency, as well as the dependence of current on light polarizatio… ▽ More We calculate the bulk photovoltaic response of the ferroelectrics BaTiO$_3$ and PbTiO$_3$ from first principles by applying "shift current" theory to the electronic structure from density functional theory. The first principles results for BaTiO$_3$ reproduce eperimental photocurrent direction and magnitude as a function of light frequency, as well as the dependence of current on light polarization, demonstrating that shift current is the dominant mechanism of the bulk photovoltaic effect in BaTiO$_3$. Additionally, we analyze the relationship between response and material properties in detail. The photocurrent does not depend simply or strongly on the magnitude of material polarization, as has been previously assumed; instead, electronic states with delocalized, covalent bonding that is highly asymmetric along the current direction are required for strong shift current enhancements. The complexity of the response dependence on both external and material parameters suggests applications not only in solar energy conversion, but to photocatalysis and sensor and switch type devices as well. △ Less

Submitted 21 August, 2012; v1 submitted 14 February, 2012; originally announced February 2012.

Comments: First submitted April 2011, submitted PRL July 2011

Dirac semimetal in three dimensions

Authors: S. M. Young, S. Zaheer, J. C. Y. Teo, C. L. Kane, E. J. Mele, A. M. Rappe

Abstract: In a Dirac semimetal, the conduction and valence bands contact only at discrete (Dirac) points in the Brillouin zone (BZ) and disperse linearly in all directions around these critical points. Including spin, the low energy effective theory around each critical point is a four band Dirac Hamiltonian. In two dimensions (2D), this situation is realized in graphene without spin-orbit coupling. 3D Dira… ▽ More In a Dirac semimetal, the conduction and valence bands contact only at discrete (Dirac) points in the Brillouin zone (BZ) and disperse linearly in all directions around these critical points. Including spin, the low energy effective theory around each critical point is a four band Dirac Hamiltonian. In two dimensions (2D), this situation is realized in graphene without spin-orbit coupling. 3D Dirac points are predicted to exist at the phase transition between a topological and a normal insulator in the presence of inversion symmetry. Here we show that 3D Dirac points can also be protected by crystallographic symmetries in particular space-groups and enumerate the criteria necessary to identify these groups. This reveals the possibility of 3D analogs to graphene. We provide a systematic approach for identifying such materials and present ab initio calculations of metastable β-cristobalite BiO_2 which exhibits Dirac points at the three symmetry related X points of the BZ. △ Less

Submitted 17 February, 2012; v1 submitted 28 November, 2011; originally announced November 2011.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 108, 140405 (2012)

Theoretical investigation of the evolution of the topological phase of Bi$_{2}$Se$_{3}$ under mechanical strain

Authors: Steve M. Young, Sugata Chowdhury, Eric J. Walter, Eugene J. Mele, Charles L. Kane, Andrew M. Rappe

Abstract: The topological insulating phase results from inversion of the band gap due to spin-orbit coupling at an odd number of time-reversal symmetric points. In Bi$_2$Se$_3$, this inversion occurs at the $Γ$ point. For bulk Bi$_2$Se$_3$, we have analyzed the effect of arbitrary strain on the $Γ$ point band gap using Density Functional Theory. By computing the band structure both with and without spin-orb… ▽ More The topological insulating phase results from inversion of the band gap due to spin-orbit coupling at an odd number of time-reversal symmetric points. In Bi$_2$Se$_3$, this inversion occurs at the $Γ$ point. For bulk Bi$_2$Se$_3$, we have analyzed the effect of arbitrary strain on the $Γ$ point band gap using Density Functional Theory. By computing the band structure both with and without spin-orbit interactions, we consider the effects of strain on the gap via Coulombic interaction and spin-orbit interaction separately. While compressive strain acts to decrease the Coulombic gap, it also increases the strength of the spin-orbit interaction, increasing the inverted gap. Comparison with Bi$_2$Te$_3$ supports the conclusion that effects on both Coulombic and spin-orbit interactions are critical to understanding the behavior of topological insulators under strain, and we propose that the topological insulating phase can be effectively manipulated by inducing strain through chemical substitution. △ Less

Submitted 27 June, 2011; originally announced June 2011.