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Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits
Authors:
Holly G. Stemp,
Serwan Asaad,
Mark R. van Blankenstein,
Arjen Vaartjes,
Mark A. I. Johnson,
Mateusz T. Mądzik,
Amber J. A. Heskes,
Hannes R. Firgau,
Rocky Y. Su,
Chih Hwan Yang,
Arne Laucht,
Corey I. Ostrove,
Kenneth M. Rudinger,
Kevin Young,
Robin Blume-Kohout,
Fay E. Hudson,
Andrew S. Dzurak,
Kohei M. Itoh,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Andrea Morello
Abstract:
Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of…
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Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of universal 1- and 2-qubit gates in a system of two weakly exchange-coupled electrons, bound to single phosphorus donors introduced in silicon by ion implantation. We surprisingly observe that the exchange interaction has no effect on the qubit coherence. We quantify the fidelity of the quantum operations using gate set tomography (GST), and we use the universal gate set to create entangled Bell states of the electrons spins, with fidelity ~ 93%, and concurrence 0.91 +/- 0.08. These results form the necessary basis for scaling up donor-based quantum computers.
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Submitted 2 March, 2024; v1 submitted 27 September, 2023;
originally announced September 2023.
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Muon-spin relaxation investigation of magnetic bistability in a crystalline organic radical compound
Authors:
Alberto Hernandez-Melian,
Benjamin M. Huddart,
Francis L. Pratt,
Stephen J. Blundell,
Michelle B. Mills,
Harrison K. S. Young,
Kathryn E. Preuss,
Tom Lancaster
Abstract:
We present the results of a muon-spin relaxation ($μ^{+}$SR) investigation of the crystalline organic radical compound 4-(2-benzimidazolyl)-1,2,3,5-dithiadiazolyl (HbimDTDA), in which we demonstrate the hysteretic magnetic switching of the system that takes place at $T = 274 \pm 11\,\mathrm{K}$ caused by a structural phase transition. Muon-site analysis using electronic structure calculations sugg…
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We present the results of a muon-spin relaxation ($μ^{+}$SR) investigation of the crystalline organic radical compound 4-(2-benzimidazolyl)-1,2,3,5-dithiadiazolyl (HbimDTDA), in which we demonstrate the hysteretic magnetic switching of the system that takes place at $T = 274 \pm 11\,\mathrm{K}$ caused by a structural phase transition. Muon-site analysis using electronic structure calculations suggests a range of candidate muon stopping sites. The sites are numerous and similar in energy but, significantly, differ between the two structural phases of the material. Despite the difference in the sites, the muon remains a faithful probe of the transition, revealing a dynamically-fluctuating magnetically disordered state in the low-temperature structural phase. In contrast, in the high temperature phase the relaxation is caused by static nuclear moments, with rapid electronic dynamics being motionally narrowed from the muon spectra.
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Submitted 28 November, 2022;
originally announced November 2022.
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Precision tomography of a three-qubit donor quantum processor in silicon
Authors:
Mateusz T. Mądzik,
Serwan Asaad,
Akram Youssry,
Benjamin Joecker,
Kenneth M. Rudinger,
Erik Nielsen,
Kevin C. Young,
Timothy J. Proctor,
Andrew D. Baczewski,
Arne Laucht,
Vivien Schmitt,
Fay E. Hudson,
Kohei M. Itoh,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Andrew S. Dzurak,
Christopher Ferrie,
Robin Blume-Kohout,
Andrea Morello
Abstract:
Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to…
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Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterised using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Since electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.
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Submitted 27 January, 2022; v1 submitted 6 June, 2021;
originally announced June 2021.
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Converting a real quantum bath to an effective classical noise
Authors:
Wayne M. Witzel,
Kevin Young,
Sankar Das Sarma
Abstract:
We present a cluster expansion method for approximating quantum spin-bath dynamics in terms of a classical Gaussian stochastic process. The cluster expansion produces the two-point correlation function of the approximate classical bath, permitting rapid evaluation of noise-mitigating quantum control strategies without resorting to computationally intensive dynamical decoupling models. Our approxim…
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We present a cluster expansion method for approximating quantum spin-bath dynamics in terms of a classical Gaussian stochastic process. The cluster expansion produces the two-point correlation function of the approximate classical bath, permitting rapid evaluation of noise-mitigating quantum control strategies without resorting to computationally intensive dynamical decoupling models. Our approximation is valid for the wide class of models possessing negligible back-action and nearly-Gaussian noise. We study several instances of the central spin decoherence problem in which the central spin and randomly-located bath spins are alike and dipolarly coupled. For various pulse sequences, we compare the coherence echo decay computed explicitly quantum mechanically versus those computed using our approximate classical model, and obtain agreement in most, but not all, cases. We demonstrate the utility of these classical noise models by efficiently searching for the 4-pulse sequences that maximally mitigate decoherence in each of these cases, a computationally expensive task in the explicit quantum model.
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Submitted 28 September, 2014; v1 submitted 9 July, 2013;
originally announced July 2013.
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Stroboscopic Generation of Topological Protection
Authors:
C. M. Herdman,
Kevin C. Young,
V. Scarola,
Mohan Sarovar,
K. B. Whaley
Abstract:
Trapped neutral atoms offer a powerful route to robust simulation of complex quantum systems. We present here a stroboscopic scheme for realization of a Hamiltonian with $n$-body interactions on a set of neutral atoms trapped in an addressable optical lattice, using only 1- and 2-body physical operations together with a dissipative mechanism that allows thermalization to finite temperature or cool…
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Trapped neutral atoms offer a powerful route to robust simulation of complex quantum systems. We present here a stroboscopic scheme for realization of a Hamiltonian with $n$-body interactions on a set of neutral atoms trapped in an addressable optical lattice, using only 1- and 2-body physical operations together with a dissipative mechanism that allows thermalization to finite temperature or cooling to the ground state. We demonstrate this scheme with application to the toric code Hamiltonian, ground states of which can be used to robustly store quantum information when coupled to a low temperature reservoir.
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Submitted 9 June, 2010; v1 submitted 23 July, 2009;
originally announced July 2009.
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Quantum non-demolition measurements of single donor spins in semiconductors
Authors:
Mohan Sarovar,
Kevin C. Young,
Thomas Schenkel,
K. Birgitta Whaley
Abstract:
We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is facilitated by hyperfine coupling to the donor nucleus. We analyze the potential sensitivity and outline experimental requirements. Our measurement provides a single-shot, project…
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We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is facilitated by hyperfine coupling to the donor nucleus. We analyze the potential sensitivity and outline experimental requirements. Our measurement provides a single-shot, projective, and quantum non-demolition measurement of an electron-encoded qubit state.
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Submitted 4 January, 2009; v1 submitted 15 November, 2007;
originally announced November 2007.
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Coherent coupling dynamics in a quantum dot microdisk laser
Authors:
D. K. Young,
L. Zhang,
D. D. Awschalom,
E. L. Hu
Abstract:
Luminescence intensity autocorrelation (LIA) is employed to investigate coupling dynamics between (In,Ga)As QDs and a high-Q (~7000) resonator with ultrafast time resolution (150 fs), below and above the lasing threshold at T = 5 K. For QDs resonant and non-resonant with the cavity we observe both a six-fold enhancement and a 0.77 times reduction of the spontaneous emission rate, respectively. I…
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Luminescence intensity autocorrelation (LIA) is employed to investigate coupling dynamics between (In,Ga)As QDs and a high-Q (~7000) resonator with ultrafast time resolution (150 fs), below and above the lasing threshold at T = 5 K. For QDs resonant and non-resonant with the cavity we observe both a six-fold enhancement and a 0.77 times reduction of the spontaneous emission rate, respectively. In addition, LIA spectroscopy reveals the onset of coherent coupling at the lasing threshold through qualitative changes in the dynamic behavior and a tripling of the resonant QD emission rate.
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Submitted 5 June, 2002;
originally announced June 2002.
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Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures
Authors:
D. K. Young,
E. Johnston-Halperin,
D. D. Awschalom,
Y. Ohno,
H. Ohno
Abstract:
A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In,Ga)As quantum well placed a distance d (20 to 420 nm) below the p-type ferromagnetic (Ga,Mn)As con…
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A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In,Ga)As quantum well placed a distance d (20 to 420 nm) below the p-type ferromagnetic (Ga,Mn)As contact. In addition, a monotonic increase from 0.5 to 7% in the polarization is measured as d decreases for collection parallel to the growth direction, while the in-plane polarization from the perpendicular direction (~0.5%) remains unchanged.
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Submitted 21 January, 2002;
originally announced January 2002.
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Spin-polarized Zener tunneling in (Ga,Mn)As
Authors:
E. Johnston-Halperin,
D. Lofgreen,
R. K. Kawakami,
D. K. Young,
L. Coldren,
A. C. Gossard,
D. D. Awschalom
Abstract:
We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminesce…
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We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.
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Submitted 2 October, 2001;
originally announced October 2001.