Josephson Junctions in the Age of Quantum Discovery
Authors:
Hyunseong Kim,
Gyunghyun Jang,
Seungwon Jin,
Dongbin Shin,
Hyeon-Jin Shin,
Jie Luo,
Irfan Siddiqi,
Yosep Kim,
Hoon Hahn Yoon,
Long B. Nguyen
Abstract:
The unique combination of energy conservation and nonlinear behavior exhibited by Josephson junctions has driven transformative advances in modern quantum technologies based on superconducting circuits. These superconducting devices underpin essential developments across quantum computing, quantum sensing, and quantum communication and open pathways to innovative applications in nonreciprocal elec…
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The unique combination of energy conservation and nonlinear behavior exhibited by Josephson junctions has driven transformative advances in modern quantum technologies based on superconducting circuits. These superconducting devices underpin essential developments across quantum computing, quantum sensing, and quantum communication and open pathways to innovative applications in nonreciprocal electronics. These developments are enabled by recent breakthroughs in nanofabrication and characterization methodologies, substantially enhancing device performance and scalability. The resulting innovations reshape our understanding of quantum systems and enable practical applications. This perspective explores the foundational role of Josephson junctions research in propelling quantum technologies forward. We underscore the critical importance of synergistic progress in material science, device characterization, and nanofabrication to catalyze the next wave of breakthroughs and accelerate the transition from fundamental discoveries to industrial-scale quantum utilities. Drawing parallels with the transformative impact of transistor-based integrated circuits during the Information Age, we envision Josephson junction-based circuits as central to driving a similar revolution in the emerging Quantum Age.
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Submitted 19 May, 2025;
originally announced May 2025.
Negative Fermi-level Pinning Effect of Metal/n-GaAs(001) Junction with Graphene Interlayer
Authors:
Hoon Hahn Yoon,
Wonho Song,
Sungchul Jung,
Junhyung Kim,
Kyuhyung Mo,
Gahyun Choi,
Hu Young Jeong,
Jong Hoon Lee,
Kibog Park
Abstract:
It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the lo…
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It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the Schottky barrier decreasing as metal work-function increasing. Our work shows that the graphene interlayer can invert the effective work-function of metal between $high$ and $low$, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly $high$ work-function) metal electrodes on a semiconductor substrate possessing low surface-state density.
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Submitted 14 July, 2019;
originally announced July 2019.
