Showing 1–5 of 5 results for author: Yoh, K

Electrical spin injection from ferromagnet into an InAs heterostructures through MgO tunnel barrier

Authors: T. Ishikura, Z. Cui, L-K. Liefeith, K. Konishi, Kanji Yoh

Abstract: We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both nonlocal and local spin valve set-ups and the spin diffusion length and spin injection efficiency were analyzed. The spin diffusion length was estimated to be… ▽ More We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both nonlocal and local spin valve set-ups and the spin diffusion length and spin injection efficiency were analyzed. The spin diffusion length was estimated to be 1.6 μm in nonlocal set-up at 1.4 K. The spin polarization of Ni81Fe19/MgO/InAs as-deposited sample was relealed to be 6.9 %, while increased spin polarization of 8.9 % was observed by additional thermal treatment. △ Less

Submitted 5 April, 2013; originally announced April 2013.

State Tomography of a Chain of Qubits Embedded in a Spin Field-Effect Transistor via Repeated Spin-Blockade Measurements on the Edge Qubit

Authors: Kazuya Yuasa, Kosuke Okano, Hiromichi Nakazato, Saori Kashiwada, Kanji Yoh

Abstract: As a possible physical realization of a quantum information processor, a system with stacked self-assembled InAs quantum dots buried in GaAs in adjacent to the channel of a spin field-effect transistor has been proposed. In this system, only one of the stacked qubits, i.e. the edge qubit (the qubit closest to the channel), is measurable via "spin-blockade measurement." It is shown that the state… ▽ More As a possible physical realization of a quantum information processor, a system with stacked self-assembled InAs quantum dots buried in GaAs in adjacent to the channel of a spin field-effect transistor has been proposed. In this system, only one of the stacked qubits, i.e. the edge qubit (the qubit closest to the channel), is measurable via "spin-blockade measurement." It is shown that the state tomography of the whole chain of the qubits is still possible even under such a restricted accessibility. The idea is to make use of the entangling dynamics of the qubits. A recipe for the two-qubit system is explicitly constructed and the effect of an imperfect fidelity of the measurement is clarified. A general scheme for multiple qubits based on repeated measurements is also presented. △ Less

Submitted 19 March, 2009; v1 submitted 5 June, 2008; originally announced June 2008.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 79 (2009) 075318

Datta-Das type spin-field effect transistor in non-ballistic regime

Authors: Munekazu Ohno, Kanji Yoh

Abstract: It is revealed that in spin helix state of (001) quantum well system, strong suppression of D'yakonov-Perel' spin relaxation process occurs by an interplay between Rashba and Dresselhaus couplings over a wide range of Rashba coupling strength. Contrary to common belief in early works, this leads to the finding that Datta-Das type spin-field effect transistor is actually applicable to more realis… ▽ More It is revealed that in spin helix state of (001) quantum well system, strong suppression of D'yakonov-Perel' spin relaxation process occurs by an interplay between Rashba and Dresselhaus couplings over a wide range of Rashba coupling strength. Contrary to common belief in early works, this leads to the finding that Datta-Das type spin-field effect transistor is actually applicable to more realistic non-ballistic transport regime in two dimensional electron gas system. △ Less

Submitted 25 June, 2007; originally announced June 2007.

Comments: 8 pages, 3 figures

High quality Fe3-deltaO4/InAs hybrid structure for electrical spin injection

Authors: Marhoun Ferhat, Kanji Yoh

Abstract: Single Crystalline Fe3-deltaO4 (0<=delta<=0.33) films have been epitaxially grown on InAs (001) substrates by molecular beam epitaxy using O2 as source of active oxygen. Under optimum growth conditions in-situ real time reflection high-energy electron diffraction patterns along with ex-situ atomic force microscopy indicated the (001) Fe3-deltaO4 to be grown under step-flow-growth mode with a cha… ▽ More Single Crystalline Fe3-deltaO4 (0<=delta<=0.33) films have been epitaxially grown on InAs (001) substrates by molecular beam epitaxy using O2 as source of active oxygen. Under optimum growth conditions in-situ real time reflection high-energy electron diffraction patterns along with ex-situ atomic force microscopy indicated the (001) Fe3-deltaO4 to be grown under step-flow-growth mode with a characteristic surface reconstruction. X-ray photoelectron spectroscopy demonstrate the possibility to obtain iron oxides with compositions ranging from Fe3O4 to gamma-Fe2O3. Superconducting quantum interference device magnetometer at 300K shows well behaved magnetic properties giving therefore credibility to the promise of iron based oxides for spintronic applications. △ Less

Submitted 25 October, 2006; originally announced October 2006.

Comments: 3 pages, 4 figures appeared in Virtual Journal of Nanoscale Science and Technology, Vol:15, issue12, March 26, 2007

Journal ref: Applied Physics Letters Vol.90, No.11, pp112501(2007)

Spin-Polarized Electron Injection through an Fe/InAs Junction

Authors: Hiroshi Ohno, Kanji Yoh, Kazuhisa Sueoka, Koichi Mukasa, Atsushi Kawaharazuka, Manfred E. Ramsteiner

Abstract: We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12 % at the temp… ▽ More We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12 % at the temperature of 6.5 K and the external magnetic field of 10 T. This result suggests that the efficient spin injection is possible through the ferromagnetic metal/semiconductor (FM/SC) interface without a tunneling barrier despite the contradictory arguments based on conductivity mismatch at the FM/SC interface. △ Less

Submitted 8 January, 2003; originally announced January 2003.

Comments: 8 pages, 3 figures, to appear in Japanese Journal of Applied Physics Pt2 Express Letter

Journal ref: Jpn. J. Appl. Phys. Pt.2 Vol.40, No.2A, pp.L87-L89 (2003)