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Electrical Charge Control of h-BN Single Photon Sources
Authors:
Mihyang Yu,
Donggyu Yim,
Hosung Seo,
Jieun Lee
Abstract:
Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic quantum communications, the ability to electrically activate the single photon fluorescence using an external electric field is crucial. In this work, we show th…
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Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic quantum communications, the ability to electrically activate the single photon fluorescence using an external electric field is crucial. In this work, we show the electrical switching of the photoluminescence from h-BN quantum emitters, enabled by the controllable electron transfer from the nearby charge reservoir. By tuning the Fermi level of graphene next to the h-BN defects, we observed luminescence brightening of a quantum emitter upon the application of a voltage due to the direct charge state manipulation. In addition, the correlation measurement of the single photon sources with the graphene's Raman spectroscopy allows us to extract the exact charge transition level of quantum emitters, providing the information on the crystallographic nature of the defect structure. With the complete on-off switching of emission intensity of h-BN quantum emitters using a voltage, our result paves the way for the van der Waals colour centre based photonic quantum information processing, cryptography and memory applications.
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Submitted 9 June, 2022; v1 submitted 18 February, 2022;
originally announced February 2022.
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First-principles predictions of out-of-plane group IV and V dimers as high-symmetry high-spin defects in hexagonal boron nitride
Authors:
Jooyong Bhang,
He Ma,
Donggyu Yim,
Giulia Galli,
Hosung Seo
Abstract:
Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonics applications. Most recently, optically addressable spin qubits in h-BN have been the focus of intensive research due to their unique potential in quantum computing, communication, and sensing. However, the n…
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Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonics applications. Most recently, optically addressable spin qubits in h-BN have been the focus of intensive research due to their unique potential in quantum computing, communication, and sensing. However, the number of high-symmetry high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. Here, we combine density functional theory (DFT) and quantum embedding theories to show that out-of-plane XY dimer defects (X, Y = C, N, P, Si) form a new class of stable C3v spin-triplet defects in h-BN. We find that the dimer defects have a robust 3A2 ground state and 3E excited state, both of which are isolated from the h-BN bulk states. We show that 1E and 1A shelving states exist and they are positioned between the 3E and 3A2 states for all the dimer defects considered in this study. To support future experimental identification of the XY dimer defects, we provide an extensive characterization of the defects in terms of their spin and optical properties. We predict that the zero-phonon line of the spin-triplet XY defects lies in the visible range (800 nm - 500 nm). We compute the zero-field splitting of the dimers to range from 1.79 GHz (SiP) to 29.5 GHz (CN). Our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride.
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Submitted 7 September, 2021;
originally announced September 2021.
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Polarization and localization of single-photon emitters in hexagonal boron nitride wrinkles
Authors:
Donggyu Yim,
Mihyang Yu,
Gichang Noh,
Jieun Lee,
Hosung Seo
Abstract:
Color centers in 2-dimensional hexagonal boron nitride (h-BN) have recently emerged as stable and bright single-photon emitters (SPEs) operating at room temperature. In this study, we combine theory and experiment to show that vacancy-based SPEs selectively form at nano-scale wrinkles in h-BN with its optical dipole preferentially aligned to the wrinkle direction. By using density functional theor…
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Color centers in 2-dimensional hexagonal boron nitride (h-BN) have recently emerged as stable and bright single-photon emitters (SPEs) operating at room temperature. In this study, we combine theory and experiment to show that vacancy-based SPEs selectively form at nano-scale wrinkles in h-BN with its optical dipole preferentially aligned to the wrinkle direction. By using density functional theory calculations, we find that the wrinkle curvature plays a crucial role in localizing vacancy-based SPE candidates and aligning the defects symmetry plane to the wrinkle direction. By performing optical measurements on SPEs created in h-BN single-crystal flakes, we experimentally confirm the wrinkle-induced generation of SPEs and their polarization alignment to the wrinkle direction. Our results not only provide a new route to controlling the atomic position and the optical property of the SPEs but also revealed the possible crystallographic origin of the SPEs in h-BN, greatly enhancing their potential for use in solid-state quantum photonics and quantum information processing.
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Submitted 3 August, 2020;
originally announced August 2020.
