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Dark states of electrons in a quantum system with two pairs of sublattices
Authors:
Yoonah Chung,
Minsu Kim,
Yeryn Kim,
Seyeong Cha,
Joon Woo Park,
Jeehong Park,
Yeonjin Yi,
Dongjoon Song,
Jung Hyun Ryu,
Kimoon Lee,
Timur K. Kim,
Cephise Cacho,
Jonathan Denlinger,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Keun Su Kim
Abstract:
A quantum state of matter that is forbidden to interact with photons and is therefore undetectable by spectroscopic means is called a dark state. This basic concept can be applied to condensed matter where it suggests that a whole band of quantum states could be undetectable across a full Brillouin zone. Here we report the discovery of such condensed matter dark states in palladium diselenide as a…
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A quantum state of matter that is forbidden to interact with photons and is therefore undetectable by spectroscopic means is called a dark state. This basic concept can be applied to condensed matter where it suggests that a whole band of quantum states could be undetectable across a full Brillouin zone. Here we report the discovery of such condensed matter dark states in palladium diselenide as a model system that has two pairs of sublattices in the primitive cell. By using angle-resolved photoemission spectroscopy, we find valence bands that are practically unobservable over the whole Brillouin zone at any photon energy, polarisation, and scattering plane. Our model shows that two pairs of sublattices located at half-translation positions and related by multiple glide-mirror symmetries make their relative quantum phases polarised into only four kinds, three of which become dark due to double destructive interference. This mechanism is generic to other systems with two pairs of sublattices, and we show how the phenomena observed in cuprates, lead-halide perovskites, and density wave systems can be resolved by the mechanism of dark states. Our results suggest that the sublattice degree of freedom, which has been overlooked so far, should be considered in the study of correlated phenomena and optoelectronic characteristics.
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Submitted 10 July, 2025;
originally announced July 2025.
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Rapid Vapor-Assisted Solution Process of Metal-Organic Chalcogenides for High-Performance Light-Emitting Diodes
Authors:
Sang-Hyun Chin,
Daseul Lee,
Donggyu Lee,
Kwanghyun Chung,
Eunjong Yoo,
Tong-Il Kim,
Su Hwan Lee,
Sang Woo Bae,
Young-Hoon Kim,
Yeonjin Yi
Abstract:
Metal-organic chalcogenides (MOCs), robust crystalline assemblies composed of coinage metals, chalcogens and organic ligands, are typically synthesized via prolonged, high temperature tarnishing of vacuum-deposited metal films with organochalcogen precursors. The prolonged exposure to high temperatures and the necessity for direct vacuum deposition of silver can induce damage to the underlying fil…
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Metal-organic chalcogenides (MOCs), robust crystalline assemblies composed of coinage metals, chalcogens and organic ligands, are typically synthesized via prolonged, high temperature tarnishing of vacuum-deposited metal films with organochalcogen precursors. The prolonged exposure to high temperatures and the necessity for direct vacuum deposition of silver can induce damage to the underlying films, posing significant challenges to the fabrication of optoelectronic devices, despite their cost-effectiveness and chemical robustness. This study introduces vapor-assisted solution processing, a novel chemical vapor deposition method, enabling remarkably rapid fabrication of luminescent MOC films. Furthermore, the first MOC-based light-emitting diodes (MOCLEDs) are realized, achieving an external quantum efficiency (EQE) approaching 0.1% and electroluminescence peaking at 633 nm. These results highlight the potential of MOCs as next-generation emitters for displays and solid-state lighting. This work offers a promising fabrication strategy and insights for advancing MOCLEDs and expanding their optoelectronic potential.
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Submitted 25 March, 2025;
originally announced March 2025.
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Ultrahigh-temperature ferromagnetism in ultrathin insulating films with ripple-infinite-layer structure
Authors:
Yazhuo Yi,
Haoliang Huang,
Ruiwen Shao,
Yukuai Liu,
Guangzheng Chen,
Jiahui Ou,
Xi Zhang,
Ze Hua,
Lang Chen,
Chi Wah Leung,
Xie-Rong Zeng,
Feng Rao,
Nan Liu,
Heng Wang,
Liang Si,
Hongyu An,
Zhuoyu Chen,
Chuanwei Huang
Abstract:
Ferromagnetism and electrical insulation are often at odds, signifying an inherent trade off. The simultaneous optimization of both in one material, essential for advancing spintronics and topological electronics, necessitates the individual manipulation over various degrees of freedom of strongly correlated electrons. Here, by selective control of the spin exchange and Coulomb interactions, we re…
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Ferromagnetism and electrical insulation are often at odds, signifying an inherent trade off. The simultaneous optimization of both in one material, essential for advancing spintronics and topological electronics, necessitates the individual manipulation over various degrees of freedom of strongly correlated electrons. Here, by selective control of the spin exchange and Coulomb interactions, we report the achievement of SrFeO2 thin films with resistivity above 106 Ohm.cm and strong magnetization with Curie temperature extrapolated to be 1200 K. Robust ferromagnetism is obtained down to 1.0 nm thickness on substrate and 2.0 nm for freestanding films. Featuring an out of plane oriented ripple infinite layer structure, this ferromagnetic insulating phase is obtained through extensive reduction of as grown brownmillerite SrFeO2.5 films at high compressive strains. Pronounced spin Hall magnetoresistance signals up to 0.0026 is further demonstrated with a Pt Hall bar device. Our findings promise emerging spintronic and topological electronic functionalities harnessing spin dynamics with minimized power dissipations.
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Submitted 6 December, 2024;
originally announced December 2024.
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Extrinsic nonlinear Kerr rotation in topological materials under a magnetic field
Authors:
Shuang Wu,
Zaiyao Fei,
Zeyuan Sun,
Yangfan Yi,
Wei Xia,
Dayu Yan,
Yanfeng Guo,
Youguo Shi,
Jiaqiang Yan,
David H. Cobden,
Wei-Tao Liu,
Xiaodong Xu,
Shiwei Wu
Abstract:
Topological properties in quantum materials are often governed by symmetry and tuned by crystal structure and external fields, and hence symmetry-sensitive nonlinear optical measurements in a magnetic field are a valuable probe. Here we report nonlinear magneto-optical second harmonic generation (SHG) studies of non-magnetic topological materials including bilayer WTe2, monolayer WSe2 and bulk TaA…
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Topological properties in quantum materials are often governed by symmetry and tuned by crystal structure and external fields, and hence symmetry-sensitive nonlinear optical measurements in a magnetic field are a valuable probe. Here we report nonlinear magneto-optical second harmonic generation (SHG) studies of non-magnetic topological materials including bilayer WTe2, monolayer WSe2 and bulk TaAs. The polarization-resolved patterns of optical SHG under magnetic field show nonlinear Kerr rotation in these time-reversal symmetric materials. For materials with three-fold rotational symmetric lattice structure, the SHG polarization pattern rotates just slightly in a magnetic field, whereas in those with mirror or two-fold rotational symmetry the SHG polarization pattern rotates greatly and distorts. These different magneto-SHG characters can be understood by considering the superposition of the magnetic field-induced time-noninvariant nonlinear optical tensor and the crystal-structure-based time-invariant counterpart. The situation is further clarified by scrutinizing the Faraday rotation, whose subtle interplay with crystal symmetry accounts for the diverse behavior of the extrinsic nonlinear Kerr rotation in different materials. Our work illustrates the application of magneto-SHG techniques to directly probe nontrivial topological properties, and underlines the importance of minimizing extrinsic nonlinear Kerr rotation in polarization-resolved magneto-optical studies.
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Submitted 18 September, 2023;
originally announced September 2023.
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Universal and Efficient p-Doping of Organic Semiconductors by Electrophilic Attack of Cations
Authors:
Jing Guo,
Ying Liu,
Ping-An Chen,
Xinhao Wang,
Yanpei Wang,
Jing Guo,
Xincan Qiu,
Zebing Zeng,
Lang Jiang,
Yuanping Yi,
Shun Watanabe,
Lei Liao,
Yugang Bai,
Thuc-Quyen Nguyen,
Yuanyuan Hu
Abstract:
Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to a small number of OSCs, seriously limiting their general application. Herein, we reveal a novel p-doping mechanism by investigating the interactions between the dopant trityl cation and poly(3-he…
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Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to a small number of OSCs, seriously limiting their general application. Herein, we reveal a novel p-doping mechanism by investigating the interactions between the dopant trityl cation and poly(3-hexylthiophene) (P3HT). It is found that electrophilic attack of the trityl cations on thiophenes results in the formation of alkylated ions that induce electron transfer from neighboring P3HT chains, resulting in p-doping. This unique p-doping mechanism can be employed to dope various OSCs including those with high ionization energy (IE=5.8 eV). Moreover, this doping mechanism endows trityl cation with strong doping ability, leading to polaron yielding efficiency of 100 % and doping efficiency of over 80 % in P3HT. The discovery and elucidation of this novel doping mechanism not only points out that strong electrophiles are a class of efficient p-dopants for OSCs, but also provides new opportunities towards highly efficient doping of OSCs.
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Submitted 14 February, 2022;
originally announced February 2022.
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Non-Hermitian skin modes induced by on-site dissipations and chiral tunneling effect
Authors:
Yifei Yi,
Zhesen Yang
Abstract:
In this paper, we study the conditions under which on-site dissipations can induce non-Hermitian skin modes in non-Hermitian systems. When the original Hermitian Hamiltonian has spinless time-reversal symmetry, it is impossible to have skin modes; on the other hand, if the Hermitian Hamiltonian has spinful time-reversal symmetry, skin modes can be induced by on-site dissipations under certain circ…
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In this paper, we study the conditions under which on-site dissipations can induce non-Hermitian skin modes in non-Hermitian systems. When the original Hermitian Hamiltonian has spinless time-reversal symmetry, it is impossible to have skin modes; on the other hand, if the Hermitian Hamiltonian has spinful time-reversal symmetry, skin modes can be induced by on-site dissipations under certain circumstance. As a concrete example, we employ the Rice-Mele model to illustrate our results. Furthermore, we predict that the skin modes can be detected by the chiral tunneling effect, that is, the tunneling favors the direction where the skin modes are localized. Our work reveals a no-go theorem for the emergence of skin modes, and paves the way for searching for quantum systems with skin modes and studying their novel physical responses.
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Submitted 25 September, 2020; v1 submitted 4 March, 2020;
originally announced March 2020.
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Giant and nonreciprocal second harmonic generation from layered antiferromagnetism in bilayer CrI3
Authors:
Zeyuan Sun,
Yangfan Yi,
Tiancheng Song,
Genevieve Clark,
Bevin Huang,
Yuwei Shan,
Shuang Wu,
Di Huang,
Chunlei Gao,
Zhanghai Chen,
Michael McGuire,
Ting Cao,
Di Xiao,
Wei-Tao Liu,
Wang Yao,
Xiaodong Xu,
Shiwei Wu
Abstract:
Layered antiferromagnetism is the spatial arrangement of ferromagnetic layers with antiferromagnetic interlayer coupling. Recently, the van der Waals magnet, chromium triiodide (CrI3), emerged as the first layered antiferromagnetic insulator in its few-layer form, opening up ample opportunities for novel device functionalities. Here, we discovered an emergent nonreciprocal second order nonlinear o…
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Layered antiferromagnetism is the spatial arrangement of ferromagnetic layers with antiferromagnetic interlayer coupling. Recently, the van der Waals magnet, chromium triiodide (CrI3), emerged as the first layered antiferromagnetic insulator in its few-layer form, opening up ample opportunities for novel device functionalities. Here, we discovered an emergent nonreciprocal second order nonlinear optical effect in bilayer CrI3. The observed second harmonic generation (SHG) is giant: several orders of magnitude larger than known magnetization induced SHG and comparable to SHG in the best 2D nonlinear optical materials studied so far (e.g. MoS2). We showed that while the parent lattice of bilayer CrI3 is centrosymmetric and thus does not contribute to the SHG signal, the observed nonreciprocal SHG originates purely from the layered antiferromagnetic order, which breaks both spatial inversion and time reversal symmetries. Furthermore, polarization-resolved measurements revealed the underlying C2h symmetry, and thus monoclinic stacking order in CrI3 bilayers, providing crucial structural information for the microscopic origin of layered antiferromagnetism. Our results highlight SHG as a highly sensitive probe that can reveal subtle magnetic order and open novel nonlinear and nonreciprocal optical device possibilities based on 2D magnets.
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Submitted 6 April, 2019;
originally announced April 2019.
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A highly scalable and energy-efficient artificial neuron using an Ovonic Threshold Switch (OTS) featuring the spike-frequency adaptation and chaotic activity
Authors:
Milim Lee,
Youngjo Kim,
Seong Won Cho,
Joon Young Kwak,
Hyunsu Ju,
Yeonjin Yi,
Byung-ki Cheong,
Suyoun Lee
Abstract:
As an essential building block for developing a large-scale brain-inspired computing system, we present a highly scalable and energy-efficient artificial neuron device composed of an Ovonic Threshold Switch (OTS) and a few passive electrical components. It shows not only the basic integrate-and-fire (I&F) function and the rate coding ability, but also the spike-frequency adaptation (SFA) property…
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As an essential building block for developing a large-scale brain-inspired computing system, we present a highly scalable and energy-efficient artificial neuron device composed of an Ovonic Threshold Switch (OTS) and a few passive electrical components. It shows not only the basic integrate-and-fire (I&F) function and the rate coding ability, but also the spike-frequency adaptation (SFA) property and the chaotic activity. The latter two, being the most common features found in the mammalian cortex, are particularly essential for the realization of the energy-efficient signal processing, learning, and adaptation to environments1-3, but have been hard to achieve up to now. Furthermore, with our OTS-based neuron device employing the reservoir computing technique combined with delayed feedback dynamics, spoken-digit recognition task has been performed with a considerable degree of recognition accuracy. From a comparison with a Mott memristor-based artificial neuron device, it is shown that the OTS-based artificial neuron is much more energy-efficient by about 100 times. These results show that our OTS-based artificial neuron device is promising for the application in the development of a large-scale brain-inspired computing system.
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Submitted 19 October, 2018;
originally announced October 2018.
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Stress-sign-tunable Poisson's Ratio in Monolayer Blue Phosphorus Oxide
Authors:
Bowen Zeng,
Mengqiu Long,
Yulan Dong,
Jin Xiao,
Shidong Zhang,
Yougen Yi,
Yongli Gao
Abstract:
Negative Poisson's ratio (NPR) materials have attracted tremendous interest due to their unusual physical properties and potential applications. Certain two-dimensional (2D) monolayer materials have also been found to exhibit NPR and the corresponding deformation mechanism varies. In this study, we found, based on first-principles calculations, that the Poisson's ratio (PR) sign of monolayer Blue…
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Negative Poisson's ratio (NPR) materials have attracted tremendous interest due to their unusual physical properties and potential applications. Certain two-dimensional (2D) monolayer materials have also been found to exhibit NPR and the corresponding deformation mechanism varies. In this study, we found, based on first-principles calculations, that the Poisson's ratio (PR) sign of monolayer Blue Phosphorus Oxide (BPO) can be tuned by strain: the PR is positive under uniaxial strain <= -1% but becomes negative under > 0. The deformation mechanism for BPO under strain depends on the mutual competition between the P-P attraction and P-O repulsion effect, and these two factors induce two different deformation pathways (one with positive PR, and the other with NPR). Moreover, with increasing of strain, both the decreased strength of P-P attraction and the increased strength of P-O repulsion effect modulate the PR of BPO from positive to negative.
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Submitted 4 May, 2019; v1 submitted 6 August, 2018;
originally announced August 2018.
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Gate tunable third-order nonlinear optical response of massless Dirac fermions in graphene
Authors:
Tao Jiang,
Di Huang,
Jinluo Cheng,
Xiaodong Fan,
Zhihong Zhang,
Yuwei Shan,
Yangfan Yi,
Yunyun Dai,
Lei Shi,
Kaihui Liu,
Changgan Zeng,
Jian Zi,
J. E. Sipe,
Yuen-Ron Shen,
Wei-Tao Liu,
Shiwei Wu
Abstract:
Materials with massless Dirac fermions can possess exceptionally strong and widely tunable optical nonlinearities. Experiments on graphene monolayer have indeed found very large third-order nonlinear responses, but the reported variation of the nonlinear optical coefficient by orders of magnitude is not yet understood. A large part of the difficulty is the lack of information on how doping or chem…
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Materials with massless Dirac fermions can possess exceptionally strong and widely tunable optical nonlinearities. Experiments on graphene monolayer have indeed found very large third-order nonlinear responses, but the reported variation of the nonlinear optical coefficient by orders of magnitude is not yet understood. A large part of the difficulty is the lack of information on how doping or chemical potential affects the different nonlinear optical processes. Here we report the first experimental study, in corroboration with theory, on third harmonic generation (THG) and four-wave mixing (FWM) in graphene that has its chemical potential tuned by ion-gel gating. THG was seen to have enhanced by ~30 times when pristine graphene was heavily doped, while difference-frequency FWM appeared just the opposite. The latter was found to have a strong divergence toward degenerate FWM in undoped graphene, leading to a giant third-order nonlinearity. These truly amazing characteristics of graphene come from the possibility to gate-control the chemical potential, which selectively switches on and off one- and multi-photon resonant transitions that coherently contribute to the optical nonlinearity, and therefore can be utilized to develop graphene-based nonlinear optoelectronic devices.
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Submitted 12 October, 2017;
originally announced October 2017.
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The origin of bias independent conductance plateaus and zero bias conductance peaks in Bi2Se3/NbSe2 hybrid structures
Authors:
Hui Li,
Tong Zhou,
Jun He,
Huanwen Wang,
Huachen Zhang,
Hong-Chao Liu,
Ya Yi,
Changming Wu,
Kam Tuen Law,
Hongtao He,
Jiannong Wang
Abstract:
Superconducting proximity effect (SPE) in topological insulator (TI) and superconductor (SC) hybrid structure has attracted intense attention in recent years in an effort to search for mysterious Majorana fermions (MFs) in condensed matter systems. Here we report on the SPE in a Bi2Se3/NbSe2 junction fabricated with an all-dry transfer method. Resulting from the highly transparent interface, two s…
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Superconducting proximity effect (SPE) in topological insulator (TI) and superconductor (SC) hybrid structure has attracted intense attention in recent years in an effort to search for mysterious Majorana fermions (MFs) in condensed matter systems. Here we report on the SPE in a Bi2Se3/NbSe2 junction fabricated with an all-dry transfer method. Resulting from the highly transparent interface, two sharp resistance drops are observed at 7 K and 2 K, respectively, corresponding to the superconducting transition of NbSe2 flake and the SPE induced superconductivity in Bi2Se3 flake. Experimentally measured differential conductance spectra exhibit a bias-independent conductance plateau (BICP) in the vicinity of zero bias below 7 K. As temperatures further decrease a zero bias conductance peak (ZBCP) emerges from the plateau and becomes more enhanced and sharpened at lower temperatures. Our numerically simulated differential conductance spectra reproduce the observed BICP and ZBCP and show that the SPE in topological surface states (TSS) is much stronger than that in the bulk states of Bi2Se3. The SPE induced superconducting gap for the TSS of Bi2Se3 is comparable to that of NbSe2 and gives rise to the observed BICP below 7 K. In contrast, the SPE induced superconducting gap for the bulk states of Bi2Se3 is an order of magnitude smaller than that of NbSe2 and superconducting TSS. These weakly paired bulk states in Bi2Se3 give rise to the ZBCP below 2 K. Our study has clearly unveiled the different roles of TSS and bulk stats in SPE, clarified the physical origin of the SPE induced features, and shined light on further investigation of SPE and MF in TI/SC hybrid structures.
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Submitted 26 July, 2016;
originally announced July 2016.
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High spatial frequency laser induced periodic surface structure formation in germanium by mid-IR femtosecond pulses
Authors:
Drake. R. Austin,
Kyle R. P. Kafka,
Yu Hang Lai,
Zhou Wang,
Kaikai Zhang,
Hui Li,
Cosmin I. Blaga,
Allen Y. Yi,
Louis F. DiMauro,
Enam A. Chowdhury
Abstract:
Formation of high spatial frequency laser induced periodic surface structures (HSFL) in germanium by femtosecond mid-IR pulses with wavelengths between $λ=2.0$ and $3.6 \; \mathrm{μm}$ was studied with varying angle of incidence and polarization. The period of these structures varied from $λ/3$ to $λ/8$. A modified surface-scattering model including Drude excitation and the optical Kerr effect exp…
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Formation of high spatial frequency laser induced periodic surface structures (HSFL) in germanium by femtosecond mid-IR pulses with wavelengths between $λ=2.0$ and $3.6 \; \mathrm{μm}$ was studied with varying angle of incidence and polarization. The period of these structures varied from $λ/3$ to $λ/8$. A modified surface-scattering model including Drude excitation and the optical Kerr effect explains spatial period scaling of HSFL across the mid-IR wavelengths. Transmission electron microscopy (TEM) shows the presence of a $30 \; \mathrm{n m}$ amorphous layer above the structure of crystalline germanium. Various mechanisms including two photon absorption and defect-induced amorphization are discussed as probable causes for the formation of this layer.
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Submitted 28 June, 2016;
originally announced June 2016.
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Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus
Authors:
Jimin Kim,
Seung Su Baik,
Sae Hee Ryu,
Yeongsup Sohn,
Soohyung Park,
Byeong-Gyu Park,
Jonathan Denlinger,
Yeonjin Yi,
Hyoung Joon Choi,
Keun Su Kim
Abstract:
Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface doping technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulate…
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Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface doping technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the bandgap owing to the giant Stark effect and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices.
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Submitted 22 August, 2015;
originally announced August 2015.
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Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus
Authors:
Seung Su Baik,
Keun Su Kim,
Yeonjin Yi,
Hyoung Joon Choi
Abstract:
Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) doping on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a qu…
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Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) doping on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a quadratic one in the zigzag direction. Here, based on first-principles density functional calculations, we predict that, beyond the critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac cones) emerge in K-doped few-layer BP, with linear band dispersions in all momentum directions, and the electronic states around Dirac points have chiral pseudospins and Berry's phase. These features are robust with respect to the spin-orbit interaction and may lead to graphene-like electronic transport properties with greater flexibility for potential device applications.
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Submitted 7 December, 2015; v1 submitted 20 August, 2015;
originally announced August 2015.
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Anomalous behavior of trapping in extended dendrimers with a perfect trap
Authors:
Zhongzhi Zhang,
Huan Li,
Yuhao Yi
Abstract:
Compact and extended dendrimers are two important classes of dendritic polymers. The impact of the underlying structure of compact dendrimers on dynamical processes has been much studied, yet the relation between the dynamical and structural properties of extended dendrimers remains not well understood. In this paper, we study the trapping problem in extended dendrimers with generation-dependent s…
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Compact and extended dendrimers are two important classes of dendritic polymers. The impact of the underlying structure of compact dendrimers on dynamical processes has been much studied, yet the relation between the dynamical and structural properties of extended dendrimers remains not well understood. In this paper, we study the trapping problem in extended dendrimers with generation-dependent segment lengths, which is different from that of compact dendrimers where the length of the linear segments is fixed. We first consider a particular case that the deep trap is located at the central node, and derive an exact formula for the average trapping time (ATT) defined as the average of the source-to-trap mean first passage time over all starting points. Then, using the obtained result we deduce a closed-form expression for the ATT to an arbitrary trap node, based on which we further obtain an explicit solution to the ATT corresponding to the trapping issue with the trap uniformly distributed in the polymer systems. We show that the trap location has a substantial influence on the trapping efficiency measured by the ATT, which increases with the shortest distance from the trap to the central node, a phenomenon similar to that for compact dendrimers. In contrast to this resemblance, the leading terms of ATTs for the three trapping problems differ drastically between extended and compact dendrimers, with the trapping processes in the extended dendrimers being less efficient than in compact dendrimers.
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Submitted 3 August, 2015;
originally announced August 2015.
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Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport
Authors:
Yuan Li,
Yuanping Yi,
Veaceslav Coropceanu,
Jean-Luc Brédas
Abstract:
We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vib…
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We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vibrations can decrease the optical effective masses and lead to lighter quasiparticles. On the other hand, the charge-transport and infrared optical properties of the rubrene crystal at room temperature are demonstrated to be governed by localized carriers driven by inherent thermal disorders. Our findings underline that the presence of apparently light carriers in high-mobility organic semiconductors does not necessarily imply band-like transport.
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Submitted 31 December, 2014;
originally announced January 2015.
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Symmetry Effects on Nonlocal Electron-Phonon Coupling in Organic Semiconductors
Authors:
Yuan Li,
Yuanping Yi,
Veaceslav Coropceanu,
Jean-Luc Brédas
Abstract:
The electronic and electrical properties of crystalline organic semiconductors, such as the dispersions of the electronic bands and the dependence of charge-carrier mobility on temperature, are greatly impacted by the nonlocal electron-phonon interactions associated with intermolecular lattice vibrations. Here, we present a theoretical description that underlines that these properties vary differe…
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The electronic and electrical properties of crystalline organic semiconductors, such as the dispersions of the electronic bands and the dependence of charge-carrier mobility on temperature, are greatly impacted by the nonlocal electron-phonon interactions associated with intermolecular lattice vibrations. Here, we present a theoretical description that underlines that these properties vary differently as a function of the symmetry of the nonlocal electron-phonon coupling mechanism. The electron-phonon coupling patterns in real space are seen to have a direct and significant impact on the interactions in reciprocal space. Our findings demonstrate the importance of aspects that are usually missing in current transport models. Importantly, an adequate description of the electronic and charge-transport properties of organic semiconductors requires that the models take into account both antisymmetric and symmetric contributions to the nonlocal electron-phonon coupling mechanism.
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Submitted 4 June, 2012; v1 submitted 21 December, 2011;
originally announced December 2011.
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Graded index and randomly oriented core-shell silicon nanowires with broadband and wide angle antireflection for photovoltaic cell applications
Authors:
P. Pignalosa,
H. Lee,
L. Qiao,
M. Tseng,
Yasha Yi
Abstract:
Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60\degre…
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Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60\degree) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.
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Submitted 4 August, 2011;
originally announced August 2011.
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Metallic nanoparticle on micro ring resonator for bio optical detection and sensing
Authors:
Ali Haddadpour,
Yasha Yi
Abstract:
We have investigated the unique effects of metallic nanoparticle on the ring resonator, especially multiple Au nanoparticles on the micro ring resonator with the 4-port configuration on chip. For the Au nanoparticle, because it has smaller real refractive index than air and large absorption refractive index, we found that there is a blue shift for the ring resonance wavelength, instead of red shif…
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We have investigated the unique effects of metallic nanoparticle on the ring resonator, especially multiple Au nanoparticles on the micro ring resonator with the 4-port configuration on chip. For the Au nanoparticle, because it has smaller real refractive index than air and large absorption refractive index, we found that there is a blue shift for the ring resonance wavelength, instead of red shift normally observed for dielectric nanoparticles. The drop port intensity is strongly dependent on both number and size of nanoparticles, while relatively independent on position of nanoparticles. The correlation between the penetration depth of Au and the resonance mode evanescent tail is also discussed to reveal the unique properties of Au nanoparticle to be used for detection, sensing and nano medicine.
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Submitted 2 August, 2010;
originally announced August 2010.
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Strong Coupling between On Chip Notched Ring Resonator and Nanoparticle
Authors:
S. Wang,
K. Broderick,
H. Smith,
Y. Yi
Abstract:
We have demonstrated a new photonic structure to achieve strong optical coupling between nanoparticle and photonic molecule by utilizing a notched micro ring resonators. By creating a notch in the ring resonator and putting a nanoparticle inside the notch, large spectral shifts and splittings at nm scale can be achieved, compared to only pm scale observed by fiber tip evanescently coupled to the s…
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We have demonstrated a new photonic structure to achieve strong optical coupling between nanoparticle and photonic molecule by utilizing a notched micro ring resonators. By creating a notch in the ring resonator and putting a nanoparticle inside the notch, large spectral shifts and splittings at nm scale can be achieved, compared to only pm scale observed by fiber tip evanescently coupled to the surface of microsphere, thereby significantly lowered the quality factor requirement for single nanoparticle detection. The ability for sorting the type of nanoparticles due to very different mode shift and splitting behavior of dielectric and metallic nanoparticles is also emphasized.
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Submitted 2 August, 2010;
originally announced August 2010.
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Quasiperiodic Dynamics in Bose-Einstein Condensates in Periodic Lattices and Superlattices
Authors:
Martijn van Noort,
Mason A. Porter,
Yingfei Yi,
Shui-Nee Chow
Abstract:
We employ KAM theory to rigorously investigate quasiperiodic dynamics in cigar-shaped Bose-Einstein condensates (BEC) in periodic lattices and superlattices. Toward this end, we apply a coherent structure ansatz to the Gross-Pitaevskii equation to obtain a parametrically forced Duffing equation describing the spatial dynamics of the condensate. For shallow-well, intermediate-well, and deep-well…
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We employ KAM theory to rigorously investigate quasiperiodic dynamics in cigar-shaped Bose-Einstein condensates (BEC) in periodic lattices and superlattices. Toward this end, we apply a coherent structure ansatz to the Gross-Pitaevskii equation to obtain a parametrically forced Duffing equation describing the spatial dynamics of the condensate. For shallow-well, intermediate-well, and deep-well potentials, we find KAM tori and Aubry-Mather sets to prove that one obtains mostly quasiperiodic dynamics for condensate wave functions of sufficiently large amplitude, where the minimal amplitude depends on the experimentally adjustable BEC parameters. We show that this threshold scales with the square root of the inverse of the two-body scattering length, whereas the rotation number of tori above this threshold is proportional to the amplitude. As a consequence, one obtains the same dynamical picture for lattices of all depths, as an increase in depth essentially only affects scaling in phase space. Our approach is applicable to periodic superlattices with an arbitrary number of rationally dependent wave numbers.
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Submitted 18 September, 2006; v1 submitted 6 May, 2004;
originally announced May 2004.
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Room Temperature Ballistic Conduction in Carbon Nanotubes
Authors:
Philippe Poncharal,
Claire Berger,
Yan Yi,
Z. L. Wang,
Walt A. de Heer
Abstract:
Multiwalled carbon nanotubes are shown to be ballistic conductors at room temperature, with mean free paths of the order of tens of microns. These experiments follow and extend the original experiments by Frank et al (Science, 280 1744 1998) including in-situ electron microscopy experiments and a detailed analysis of the length dependence of the resistance. The per unit length resistance r < 100…
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Multiwalled carbon nanotubes are shown to be ballistic conductors at room temperature, with mean free paths of the order of tens of microns. These experiments follow and extend the original experiments by Frank et al (Science, 280 1744 1998) including in-situ electron microscopy experiments and a detailed analysis of the length dependence of the resistance. The per unit length resistance r < 100 Ohm/micron, indicating free paths l > 65 microns, unambiguously demonstrate ballistic conduction at room temperature up to macroscopic distances. The nanotube-metal contact resistances are in the range 0.1-1 kOhm micron. Contact scattering can explain why the measured conductances are about half the expected theoretical value of 2 G0 . For V>0.1V the conductance rises linearly (dG/dV~0.3 G0 /V) reflecting the linear increase in the density-of-states in a metallic nanotube above the energy gap. Increased resistances (r =2- 10 k Ohm/micron) and anomalous I-V dependences result from impurities and surfactants on the tubes.Evidence is presented that ballistic transport occurs in undoped and undamaged tubed for which the top layer is metallic and the next layer is semiconducting. The diffusive properties of lithographically contacted multiwalled nanotubes most likely result from purification and other processing steps that damage and dope the nanotubes thereby making them structurally and electronically different than the pristine nanotubes investigated here.
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Submitted 22 November, 2002;
originally announced November 2002.
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Charge localization and phonon spectra in hole doped La2NiO4
Authors:
R. J. McQueeney,
A. R. Bishop,
Ya-Sha Yi,
Z. G. Yu
Abstract:
The in-plane oxygen vibrations in La2NiO4 are investigated for several hole-doping concentrations both theoretically and experimentally via inelastic neutron scattering. Using an inhomogeneous Hartree-Fock plus RPA numerical method in a two-dimensional Peierls-Hubbard model, it is found that the doping induces stripe ordering of localized charges, and that the strong electron-lattice coupling ca…
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The in-plane oxygen vibrations in La2NiO4 are investigated for several hole-doping concentrations both theoretically and experimentally via inelastic neutron scattering. Using an inhomogeneous Hartree-Fock plus RPA numerical method in a two-dimensional Peierls-Hubbard model, it is found that the doping induces stripe ordering of localized charges, and that the strong electron-lattice coupling causes the in-plane oxygen modes to split into two subbands. This result agrees with the phonon band splitting observed by inelastic neutron scattering in La2-xSrxNiO4. Predictions of strong electron-lattice coupling in La2NiO4, the proximity of both oxygen-centered and nickel-centered charge ordering, and the relation between charged stripe ordering and the splitting of the in-plane phonon band upon doping are emphasized.
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Submitted 7 February, 2000;
originally announced February 2000.
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Signatures of Stripe Phases in Hole Doped $La_2NiO_4$
Authors:
Ya-Sha Yi,
Zhi-Gang Yu,
A. R. Bishop,
J. Tinka Gammel
Abstract:
We study nickelate-centered and oxygen-centered stripe phases in doped La$_{2}$NiO$_{4}$ materials. We use an inhomogeneous Hartree-Fock and random-phase approximation approach including both electron-electron and electron-lattice(e-l) coupling for a layer of La$_{2}$NiO$_{4}$. We find that whether the ground state after commensurate hole doping comprises Ni-centered or O-centered charge-localiz…
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We study nickelate-centered and oxygen-centered stripe phases in doped La$_{2}$NiO$_{4}$ materials. We use an inhomogeneous Hartree-Fock and random-phase approximation approach including both electron-electron and electron-lattice(e-l) coupling for a layer of La$_{2}$NiO$_{4}$. We find that whether the ground state after commensurate hole doping comprises Ni-centered or O-centered charge-localized stripes depends sensitively on the e-l interaction. With increasing e-l interaction strength, a continuous transition from an O-centered stripe phase to a Ni-centered one is found. Various low- and high-energy signatures of these two kinds of stripe phases are predicted, which can clearly distinguish them. These signatures reflect the strongly correlated spin-charge-lattice features in the vicinity of Ni-centered or O-centered stripe domains. The importance of e-l interaction for recent experiments on stripe phases is discussed.
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Submitted 13 May, 1998;
originally announced May 1998.
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Aharonov-Anandan Effect Induced by Spin-Orbit Interaction and Charge-Density-Waves in Mesoscopic Rings
Authors:
Ya-Sha Yi,
A. R. Bishop
Abstract:
We study the spin-dependent geometric phase effect in mesoscopic rings of charge-density-wave(CDW) materials. When electron spin is explicitly taken into account, we show that the spin-dependent Aharonov-Casher phase can have a pronounced frustration effects on such CDW materials with appropriate electron filling. We show that this frustration has observable consequences for transport experiment…
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We study the spin-dependent geometric phase effect in mesoscopic rings of charge-density-wave(CDW) materials. When electron spin is explicitly taken into account, we show that the spin-dependent Aharonov-Casher phase can have a pronounced frustration effects on such CDW materials with appropriate electron filling. We show that this frustration has observable consequences for transport experiment. We identify a phase transition from a Peierls insulator to metal, which is induced by spin-dependent phase interference effects. Mesoscopic CDW materials and spin-dependent geometric phase effects, and their interplay, are becoming attractive opportunities for exploitation with the rapid development of modern fabrication technology.
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Submitted 13 May, 1998;
originally announced May 1998.
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$E\otimes e$ Jahn-Teller Effect in $C_{70}^{3-}$ Systems
Authors:
Lin Tian,
Ya-Sha Yi,
Chui-Lin Wang,
Zhao-Bin Su
Abstract:
The electron-phonon interaction in $C_{70}$ anions is studied by making use of a lattice relaxation approach. We find there exists a Jahn-Teller effect in $C_{70}^{3-}$ system, due to an extra electron being doped to the double degenerate $E_{1}^{''}$ state. As a result of this effect, the original $D_{5h}$ symmetry of the ground state becomes unstable, which causes distortion of the lattice con…
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The electron-phonon interaction in $C_{70}$ anions is studied by making use of a lattice relaxation approach. We find there exists a Jahn-Teller effect in $C_{70}^{3-}$ system, due to an extra electron being doped to the double degenerate $E_{1}^{''}$ state. As a result of this effect, the original $D_{5h}$ symmetry of the ground state becomes unstable, which causes distortion of the lattice configuration. The only symmetry maintained in the final state of the relaxation is the $x-y$ plane reflection symmetry. We further find that besides the Jahn-Teller active $A_{1}^{'}, A_{2}^{'}, E_{2}^{'}$ modes, the non-Jahn-Teller active $E_{1}^{'}$ vibrations also contribute to the relaxation process, which come from the nonlinear effect and are two or three orders smaller than those of the Jahn-Teller active modes. We suggest that the $C_{70}^{3-}$ molecule is a promising Berry Phase candidate in this effective $E \otimes e$ Jahn-Teller system.
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Submitted 8 May, 1997;
originally announced May 1997.
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Spin Precession and Time-Reversal Symmetry Breaking in Quantum Transport of Electrons Through Mesoscopic Rings
Authors:
Ya-Sha Yi,
Tie-Zheng Qian,
Zhao-Bin Su
Abstract:
We consider the motion of electrons through a mesoscopic ring in the presence of spin-orbit interaction, Zeeman coupling, and magnetic flux. The coupling between the spin and the orbital degrees of freedom results in the geometric and the dynamical phases associated with a cyclic evolution of spin state. Using a non-adiabatic Aharonov-Anandan phase approach, we obtain the exact solution of the s…
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We consider the motion of electrons through a mesoscopic ring in the presence of spin-orbit interaction, Zeeman coupling, and magnetic flux. The coupling between the spin and the orbital degrees of freedom results in the geometric and the dynamical phases associated with a cyclic evolution of spin state. Using a non-adiabatic Aharonov-Anandan phase approach, we obtain the exact solution of the system and identify the geometric and the dynamical phases for the energy eigenstates. Spin precession of electrons encircling the ring can lead to various interference phenomena such as oscillating persistent current and conductance. We investigate the transport properties of the ring connected to current leads to explore the roles of the time-reversal symmetry and its breaking therein with the spin degree of freedom being fully taken into account. We derive an exact expression for the transmission probability through the ring. We point out that the time-reversal symmetry breaking due to Zeeman coupling can totally invalidate the picture that spin precession results in effective, spin-dependent Aharonov-Bohm flux for interfering electrons. Actually, such a picture is only valid in the Aharonov-Casher effect induced by spin-orbit interaction only. Unfortunately, this point has not been realized in prior works on the transmission probability in the presence of both SO interaction and Zeeman coupling. We carry out numerical computation to illustrate the joint effects of spin-orbit interaction, Zeeman coupling and magnetic flux. By examining the resonant tunneling of electrons in the weak coupling limit, we establish a connection between the observable time-reversal symmetry breaking effects manifested by the persistent current and by the transmission probability. For a ring formed by two-dimensional electron gas, we
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Submitted 7 May, 1997;
originally announced May 1997.
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Persistent Current From the Competition Between Zeeman Coupling and Spin-Orbit Interaction
Authors:
Tie-Zheng Qian,
Ya-Sha Yi,
Zhao-Bin Su
Abstract:
Applying the non-adiabatic Aharonov-Anandan phase approach to a mesoscopic ring with non-interacting many electrons in the presence of the spin-orbit interaction, Zeeman coupling and magnetic flux, we show that the time-reversal symmetry breaking due to Zeeman coupling is intrinsically different from that due to magnetic flux. We find that the direction of the persistent currents induced by the…
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Applying the non-adiabatic Aharonov-Anandan phase approach to a mesoscopic ring with non-interacting many electrons in the presence of the spin-orbit interaction, Zeeman coupling and magnetic flux, we show that the time-reversal symmetry breaking due to Zeeman coupling is intrinsically different from that due to magnetic flux. We find that the direction of the persistent currents induced by the Zeeman coupling changes periodically with the particle number, while the magnetic flux determines the direction of the induced currents by its sign alone.
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Submitted 23 May, 1996; v1 submitted 22 May, 1996;
originally announced May 1996.
