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Quantum dots formed in three-dimensional Dirac semimetal Cd$_3$As$_2$ nanowires
Authors:
Minkyung Jung,
Kenji Yoshida,
Kidong Park,
Xiao-Xiao Zhang,
Can Yesilyurt,
Zhuo Bin Siu,
Mansoor B. A. Jalil,
Jinwan Park,
Jeunghee Park,
Naoto Nagaosa,
Jungpil Seo,
Kazuhiko Hirakawa
Abstract:
We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$ nanowires using two electrostatically tuned p$-$n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably,…
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We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$ nanowires using two electrostatically tuned p$-$n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably, in this regime, the Cd$_{3}$As$_{2}$ nanowire device exhibits Coulomb diamond features, indicating that a clean single QD forms in the Dirac semimetal nanowire. Our results show that a p$-$type QD can be formed between two n$-$type leads underneath metal contacts in the nanowire by applying gate voltages under strong magnetic fields. Analysis of the quantum confinement in the gapless band structure confirms that p$-$n junctions formed between the p$-$type QD and two neighboring n$-$type leads under high magnetic fields behave as resistive tunnel barriers due to cyclotron motion, resulting in the suppression of Klein tunneling. The p$-$type QD with magnetic field-induced confinement shows a single hole filling. Our results will open up a route to quantum devices such as QDs or quantum point contacts based on Dirac and Weyl semimetals.
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Submitted 16 December, 2018;
originally announced December 2018.
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Strain-controlled valley and spin separation in silicene heterojunctions
Authors:
Yuan Li,
H. B. Zhu,
G. Q. Wang,
Y. Z. Peng,
J. R. Xu,
Z. H. Qian,
R. Bai,
G. H. Zhou,
C. Yesilyurt,
Z. B. Siu,
M. B. A. Jalil
Abstract:
We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmiss…
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We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modulation of valley- and spin-dependent transport by changing the amplitude and the stretch direction of the strain. The phenomenon of the strain-induced valley and spin deflection can be exploited for silicene-based valleytronics devices.
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Submitted 28 June, 2018; v1 submitted 8 July, 2017;
originally announced July 2017.
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Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion
Authors:
Can Yesilyurt,
Zhuo Bin Siu,
Seng Ghee Tan,
Gengchiau Liang,
Shengyuan A. Yang,
Mansoor B. A. Jalil
Abstract:
Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the energy dispersion is tilted along one of the transverse directions. Chirality dependent refractions at the barrier interface polarize the Weyl fermions in angl…
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Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the energy dispersion is tilted along one of the transverse directions. Chirality dependent refractions at the barrier interface polarize the Weyl fermions in angle-space according to their valley index. A real magnetic barrier configuration is used to select allowed transmission angles, which results in electrically controllable and switchable valley polarization. Our findings may pave the way for experimental investigation of valley polarization, as well as valleytronic and electron optic applications in Weyl semimetals.
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Submitted 9 February, 2018; v1 submitted 19 May, 2017;
originally announced May 2017.
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Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Mansoor B. A. Jalil
Abstract:
We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric and magnetic barrier. In the presence of both electric and magnetic barriers, we found that a large conductance gap can be produced by the aid of tilted energy dispersion without a band gap. The origin of this effect is…
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We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric and magnetic barrier. In the presence of both electric and magnetic barriers, we found that a large conductance gap can be produced by the aid of tilted energy dispersion without a band gap. The origin of this effect is the shift of the electrons wave-vector at barrier boundaries caused by i) the pseudo-magnetic field induced by electrical potential, i.e., a newly discovered feature that is only possible in the materials possessing tilted energy dispersion, ii) the real magnetic field induced by ferromagnetic layer deposited on the top of the system. We use realistic barrier structure applicable in current nanotechnology and analyze the temperature dependence of the tunneling conductance. The new approach presented here may resolve a major problem of possible transistor applications in topological semimetals, i.e., the absence of normal backscattering and gapless band structure.
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Submitted 5 January, 2017;
originally announced January 2017.
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Anomalous tunneling characteristic of Weyl semimetals with tilted energy dispersion
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Shengyuan A. Yang,
Mansoor B. A. Jalil
Abstract:
Weyl semimetal is a recently discovered state of quantum matter, which generally possesses tilted energy dispersion. Here, we investigate the electron tunneling through a Weyl semimetal p-n-p junction. The angular dependence of electron tunneling exhibits an anomalous profile such that perfect transmission angles are shifted along the direction of the tilt. Coupling of the tilted dispersion and el…
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Weyl semimetal is a recently discovered state of quantum matter, which generally possesses tilted energy dispersion. Here, we investigate the electron tunneling through a Weyl semimetal p-n-p junction. The angular dependence of electron tunneling exhibits an anomalous profile such that perfect transmission angles are shifted along the direction of the tilt. Coupling of the tilted dispersion and electrical potential within the barrier region gives rise to a transverse momentum shift, which is analogous to the transverse Lorentz displacement induced by magnetic barriers.
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Submitted 22 August, 2017; v1 submitted 20 October, 2016;
originally announced October 2016.
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Influence of Fermi arc states and double Weyl node on tunneling in a Dirac semimetal
Authors:
Zhuo Bin Siu,
Can Yesilyurt,
Mansoor B. A. Jalil,
Seng Ghee Tan
Abstract:
Most theoretical studies of tunneling in Dirac and the closely related Weyl semimetals have modeled these materials as single Weyl nodes described by the three-dimensional Dirac equation $H = v_f \vec{p}\cdot\vecσ$. The influence of scattering between the different valleys centered around different Weyl nodes, and the Fermi arc states which connect these nodes are hence not evident from these stud…
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Most theoretical studies of tunneling in Dirac and the closely related Weyl semimetals have modeled these materials as single Weyl nodes described by the three-dimensional Dirac equation $H = v_f \vec{p}\cdot\vecσ$. The influence of scattering between the different valleys centered around different Weyl nodes, and the Fermi arc states which connect these nodes are hence not evident from these studies. In this work we study the tunneling in a thin film system of the Dirac semimetal $\text{Na}_3\text{Bi}$ consisting of a central segment with a gate potential, sandwiched between identical semi-infinite source and drain segments. The model Hamiltonian we use for $\text{Na}_3\text{Bi}$ gives, for each spin, two Weyl nodes separated in $k$-space symmetrically about $k_z=0$. The presence of a top and bottom surface in the thin film geometry results in the appearance of Fermi arc states and energy subbands. We show that (for each spin) the presence of two Weyl nodes and the Fermi arc states result in enhanced transmission oscillations, and finite transmission even when the energy falls within the \textit{bulk} band gap in the central segment respectively. These features are not evident in single Weyl node models.
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Submitted 28 June, 2016;
originally announced June 2016.
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Klein tunneling in Weyl semimetals under the influence of magnetic field
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Mansoor B. A. Jalil
Abstract:
Klein tunneling refers to the absence of normal backscattering of electrons even under the case of high potential barriers. At the barrier interface, the perfect matching of electron and hole wavefunctions enables a unit transmission probability for normally incident electrons. It is theoretically and experimentally well understood in two-dimensional relativistic materials such as graphene. Here w…
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Klein tunneling refers to the absence of normal backscattering of electrons even under the case of high potential barriers. At the barrier interface, the perfect matching of electron and hole wavefunctions enables a unit transmission probability for normally incident electrons. It is theoretically and experimentally well understood in two-dimensional relativistic materials such as graphene. Here we investigate the Klein tunneling effect in Weyl semimetals under the influence of magnetic field induced by anti-symmetric ferromagnetic stripes placed at barrier boundaries. Our results show that the resonance of Fermi wave vector at specific barrier lengths gives rise to perfect transmission rings, i.e., three-dimensional analogue of the so-called magic transmission angles in two-dimensional Dirac semimetals. Besides, the transmission profile can be shifted by application of magnetic field, a property which may be utilized in electro-optic applications. When the applied potential is close to the Fermi level, a particular incident vector can be selected for transmission by tuning the applied magnetic field, thus enabling highly selective transmission of electrons in the bulk of Weyl semimetals. Our analytical and numerical calculations obtained by considering Dirac electrons in three regions and using experimentally feasible parameters can pave the way for relativistic tunneling applications in Weyl semimetals.
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Submitted 30 May, 2016;
originally announced May 2016.
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Perfect valley filter in strained graphene with single barrier region
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Mansoor B. A. Jalil
Abstract:
We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at the regions boundaries. We show that under the condition of matching magnetic field strength, strain potential, and Fermi energy, the transmitted current is com…
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We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at the regions boundaries. We show that under the condition of matching magnetic field strength, strain potential, and Fermi energy, the transmitted current is composed of only one valley contribution. The desired valley current can transmit with zero reflection while the electrons from the other valley are totally reflected. Thus, the system generates pure valley-polarized current with maximum conductance. The chosen parameters of uniaxial strain and magnetic field are in the range of experimental feasibility, which suggests that the proposed scheme can be realized with current technology.
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Submitted 10 February, 2016;
originally announced February 2016.
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Efficient Dual Spin-Valley Filter In Strained Silicene
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Mansoor B. A. Jalil
Abstract:
We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom magnetic insulators, while the second comprises of two ferromagnetic stripes which produces a delta-function fringe magnetic field, and a gate electrode to modif…
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We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom magnetic insulators, while the second comprises of two ferromagnetic stripes which produces a delta-function fringe magnetic field, and a gate electrode to modify the electrochemical potential. For the first region, we investigated the effect of the uniaxial strain in inducing angular separation of the two valley spins in momentum-space, and further spin separation by the spin dependent electric potential induced by the exchange field. We then evaluated the delta-function magnetic field and electrochemical potential combination in the second region to yield the transverse displacement for the selection of the requisite spin-valley combination. We demonstrated the optimal conditions in the first barrier to induce a highly anisotropic transmission profile, which enables controllable and efficient filtering (> 90% efficiency) by the second region for all four spin-valley combinations. Based on the analytical results, we predict the feasibility of experimental realization of dual spin-valley silicene-based filtering device.
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Submitted 2 February, 2016; v1 submitted 8 April, 2015;
originally announced April 2015.
