High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature
Authors:
C. Stanford,
R. A. Moffatt,
N. A. Kurinsky,
P. L. Brink,
B. Cabrera,
M. Cherry,
F. Insulla,
M. Kelsey,
F. Ponce,
K. Sundqvist,
S. Yellin,
B. A. Young
Abstract:
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$Ω$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis, and to verify our low-temperature Monte Carlo software. The range of field…
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We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$Ω$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis, and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in the previous study (DOI: 10.1063/1.5049691) by a factor of 10, and now encompasses the region in which some recent silicon dark matter detectors operate (DOI: 10.1103/PhysRevLett.121.051301). We also report on a phenomenon of surface charge trapping which can reduce expected charge collection.
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Submitted 4 October, 2019;
originally announced October 2019.
Spatial Imaging of Charge Transport in Silicon at Low Temperature
Authors:
R. A. Moffatt,
N. A. Kurinsky,
C. Stanford,
J. Allen,
P. L. Brink,
B. Cabrera,
M. Cherry,
F. Inuslla,
F. Ponce,
K. Sundqvist,
S. Yellin,
J. J. Yen,
B. A. Young
Abstract:
We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$Ω$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the $\langle 111 \rangle$ crystal axis, and we present a phenomenological model of…
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We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$Ω$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the $\langle 111 \rangle$ crystal axis, and we present a phenomenological model of intervalley scattering that explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotropy, which is strongly dependent on both temperature and electric field strength. The observed effects can be explained by a warping of the valence bands for carrier energies near the spin-orbit splitting energy in silicon.
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Submitted 11 December, 2018; v1 submitted 20 July, 2018;
originally announced July 2018.
